19 results about "High-temperature superconductivity" patented technology

The invention relates to high temperature superconducting qubits with disorder induced tunnel barriers. A superconducting qubit circuit and a method of forming a superconducting qubit are disclosed herein. A superconducting qubit circuit includes a superconducting qubit, where the superconducting qubit includes a tunnel junction in a superconducting material having a critical temperature above 1.2 K. The tunnel junction is formed from a disorder-induced tunnel barrier, where the disorder results from spatial crystal defects in the superconducting material.

A high-temperature superconducting qubit implements a quantum mechanical two-level system. The high-temperature superconducting qubit comprises a first superconductor, a second superconductor, and an overlap region. The first superconductor comprises a first high-temperature superconductor material. The second superconductor comprises a second high-temperature superconductor material. In the overlap region, at least a first section of the first surface and at least a second section of the second surface overlap, the first section and the second section are arranged in parallel at a distance corresponding to a predefined distance, and the first orientation and the second orientation are arranged with an angle corresponding to a predefined angle. The high-temperature superconducting qubit comprises a Josephson junction between the first high-temperature superconductor material and the second high-temperature superconductor material. The Josephson junction provides the quantum mechanical two-level system of the high-temperature superconducting qubit.

There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa2Cu3O7-x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

A stellarator, comprising a non-planar magnetic field coil including at least one winding of a high temperature superconductor, HTS, cable (500), the HTS cable (500) comprising in a first cross-section (530): - first multiple layers of superconductor material (100) with: a first geometric orientation (110, 111), a first magnetic orientation (120), and a first angle (310) between the first geometric orientation (110) and the first magnetic orientation (120); - second multiple layers of superconductor material (200) with: a second geometric orientation (210, 211), a second magnetic orientation (220), and a second angle (320) between the second geometric orientation (210) and the second magnetic orientation (220); with a third angle (330) between the first magnetic orientation (120) and the second magnetic orientation (220), wherein the third angle (330) is larger or smaller than o°.

One goal of one embodiment of the present invention is to provide a manufacturing method that produces high-temperature superconducting (HTS) and medium-temperature superconducting (MTS) materials for use in commercial applications. Thus, providing HTS / MTS devices is a related goal of some embodiments of the present invention. For example, the method of one embodiment results in a robust magnet configuration for use in first fully cryogenic (liquid cryogen) HTS linear, rotating, curved, etc. devices. The devices described herein are designed to function at liquid nitrogen (LN2) temperature using existing HTS materials and / or conventional materials that support the lower cryogenic temperatures of SCs.

The invention discloses a superconductive magnetic shielding structure based on a stepped splicing synergistic effect and a testing device thereof, and provides a composite configuration design of convex splicing and oblique splicing aiming at the technical bottlenecks of residual magnetism, concentrated magnetic flux at a seam, complex processing and the like in the existing direct splicing type superconductive magnetic shielding. The high-temperature superconducting blocks are spliced to form the large-size shielding plate, the magnetic flux density gradient of a vertical magnetic field at the seam can be effectively restrained through the synergistic effect of the two-dimensional special-shaped seam, the magnetic flux pinning effect is reduced, and the magnetic shielding performance is tested and characterized, so that compared with a linear splicing structure, the magnetic shielding performance of the large-size shielding plate is greatly improved. The residual magnetism shielding performance of the two-dimensional special-shaped seam structure in a geomagnetic field is improved by times.

The present disclosure relates to a deposition apparatus (100) for depositing a HTS material onto a first surface (11) of a substrate (10), the deposition apparatus comprising: - a deposition chamber (101) comprising side walls (111, 112); - a substrate transport system for transporting the substrate in the deposition chamber along one or more of the side walls; - a heating system for heating the substrate in the deposition chamber at a first temperature; - a precursor inlet (160) for delivering a gas flow (20) including an HTS material precursor into the deposition chamber; wherein the side walls of the deposition chamber are arranged in such a way that, when the substrate is transported along the one or more side walls of the deposition chamber, a first part (11A) of the first surface faces a second part (11B) of the first surface.

A superconducting qubit circuit and a method of forming a superconducting qubit include superconducting qubit, wherein the superconducting qubit comprises a tunnel junction in a superconducting material having a critical temperature above 1.2 K. The tunnel junction is formed by a disorder-induced tunnel barrier, wherein the disorder is created by spatial crystallographic defects in the superconducting material.

The invention discloses a room-temperature normal-pressure superconducting material and a preparation method thereof. The material is a rare earth-alkaline earth-nickel-oxygen system and has a double-layer perovskite type layered crystal structure, the chemical general formula is RE1-2AE1-2Ni2O6. 9-7.0, the optimal component is La1. 8Ca1. 2Ni2O6. 95, Tc is greater than or equal to 313K under normal pressure, zero resistance and complete diamagnetism are stably presented at-40-85 DEG C, and Jc is greater than or equal to 1 * 10 < 6 > A / cm < 2 > under 77K and 0T. The preparation method comprises the steps of precursor synthesis, material mixing and matching, pre-sintering nucleation, vacuum tube sealing sintering and precise oxygen control annealing, precise regulation and control of the oxygen content and the crystal structure of the material are achieved through vacuum tube sealing oxygen control, rapid sintering and low-temperature precise annealing, continuous equipment can be replaced to achieve kilogram-level batch preparation, the yield is larger than or equal to 85%, and the production cost is low. The device can be in butt joint with an existing high-temperature superconducting material mass production line. The invention belongs to the technical field of superconducting materials, and particularly relates to a room-temperature and normal-pressure superconducting material which is high in material environment adaptability and controllable and repeatable in preparation process and a preparation method of the room-temperature and normal-pressure superconducting material.

The invention relates to a magnetic shielding structure for a high-temperature superconducting quantum voltage standard and a generation method thereof.The magnetic shielding structure is used for providing magnetic field shielding for a to-be-shielded structure and comprises a first shielding layer, a second shielding layer and a third shielding layer, the first shielding layer, the second shielding layer and the third shielding layer are sequentially arranged in the direction from the position away from the to-be-shielded structure to the position close to the to-be-shielded structure, the first shielding layer is a high-conductivity metal material layer and used for shielding an external high-frequency magnetic field, and the second shielding layer is a high-permeability material layer and used for shielding an external low-frequency magnetic field. And the third shielding layer is a high-temperature superconducting material layer and is used for shielding an external weak magnetic field and forming a shielding cavity for accommodating a structure to be shielded. According to the magnetic shielding structure and the generation method thereof, efficient shielding of an external magnetic field is achieved in a multi-layer shielding mode.

A method of manufacturing a high temperature superconductor (HTS) field coil from one or more HTS tapes. Each HTS tape includes a layer of HTS material. The method includes: winding the one or more HTS tapes around an axis to form a field coil including windings of HTS tape; and removing material from an axial edge of one or more of the HTS tapes around at least a portion of one or more of the windings to reduce a range of the one or more HTS tapes along the axis of the field coil.

Disclosed herein is a superconducting qubit circuit and a method of forming a superconducting qubit. The superconducting qubit circuit comprises a superconducting qubit, wherein said superconducting qubit comprises a tunnel junction (100) in a superconducting material having a critical temperature above 1.2 K. The tunnel junction is formed by a disorder-induced tunnel barrier (108), wherein said disorder is created by spatial crystallographic defects in said superconducting material.

The invention discloses a VOCS waste gas catalytic treatment process for micro-nano high-temperature-resistant superconducting porcelain. The VOCS waste gas catalytic treatment process comprises the following steps: S1, micro-nano particle surface molecular engineering treatment; s2, self-assembly of surface micro-nano particles; s3, pore interface molecular engineering design; and S4, carrying out catalytic oxidation treatment on the VOCs. The invention relates to the technical field of volatile organic compounds (VOCs) waste gas purification treatment, in particular to a micro-nano high-temperature-resistant superconductive ceramic VOCS waste gas catalytic treatment process, which has the following advantages: 1, the catalytic activity and selectivity are obviously improved; 2, the stability and the utilization efficiency of the catalyst are improved; 3, optimizing mass transfer and heat transfer efficiency; 4, the safety is enhanced; and 5, the energy-saving potential is great.

The invention discloses a method and system for testing the performance of a copper oxide high-temperature superconductor, and belongs to the technical field of intelligent sensing systems, and the method comprises the steps: obtaining an original resistance-temperature change curve and a plurality of measurement resistance-temperature change curves of the copper oxide high-temperature superconductor; marking an attenuation initial temperature and a superconducting initial temperature in the resistance-temperature change curve to obtain a minimum temperature deviation of the attenuation initial temperature; screening an attenuation initial change trend section; acquiring an attenuation change steep coefficient to obtain a corrected temperature deviation of the attenuation initial temperature; obtaining an attenuation initial temperature interval and a trend influence factor of each measurement temperature in the attenuation initial temperature interval; obtaining an adjustment weight of each measurement temperature, and obtaining an adjusted attenuation initial temperature; obtaining the adjusted superconducting initial temperature; the critical temperature is obtained, and the performance test of the copper oxide high-temperature superconductor is achieved. According to the invention, the critical temperature of the copper oxide high-temperature superconductor can be tested and determined more accurately and stably.

A method and system for quench detection in high temperature superconductors, such as REBCO (rare-earth barium copper oxide), before thermal runaway. A REBCO superconducting tape is excited as a transmission line forming standing waves. A quench may then be detected in response to detecting a disturbance of the standing waves. In this manner, quench in high temperature superconductors, such as REBCO, is rapidly detected before thermal runaway.

The invention relates to a high-temperature superconducting material and a preparation method and application thereof, and relates to the field of superconducting materials, the chemical structural formula is as follows: A10-xBx (CO3-5) yDz, and the high-temperature superconducting material belongs to a pseudoapatite structure, wherein the element A comprises one or a combination of at least two of s-region metal, p-region metal or lanthanide rare earth elements; b comprises one or a combination of at least two of elements in the d region; cO3-5 comprises an acid radical; the element D comprises one or a combination of at least two of a non-metallic element or a group VIA metal element; in terms of molar weight, x belongs to [0-10], y belongs to (0-6), z is a chemical valence trim number greater than or less than the structural formula A10-xBx (CO3-5) yDz, and z belongs to (0-5). According to the high-temperature superconducting material provided by the invention, the A10-xBx (CO3-5) yDz designed by the pseudoapatite is designed, so that the superconducting at high temperature is realized.

There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa2Cu3O7-x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

The invention discloses a method for inducing a high-temperature superconducting Josephson junction by using a laser heat effect, which belongs to the technical field of micro-nano processing, and comprises the following steps of: sequentially preparing a high-temperature superconducting material layer and a protective layer on the surface of a substrate, gluing and photoetching on the surface of the protective layer to obtain a high-temperature superconducting Josephson junction; the method comprises the following steps of: obtaining a junction region coated with photoresist and an electrode region coated with photoresist, removing a protective layer and a high-temperature superconducting material layer outside the junction region and the electrode region, removing the photoresist in the junction region and the electrode region, drying, and carrying out approximation crossing type radiation on the high-temperature superconducting material layer and the protective layer in the junction region through laser spots, and the high-temperature superconductive Josephson junction is prepared. According to the method, the high-temperature superconductor is radiated by adopting the nano-sized laser spot, and through radiation of the laser spot, precise control over the nano-sized heat effect of the high-temperature superconductor is effectively achieved, so that a potential barrier is formed, the high-temperature superconductive Josephson junction is obtained, precise control over the nano-sized heat effect of the high-temperature superconductor is achieved, and the high-temperature superconductive Josephson junction is obtained. And the high-temperature superconductive Josephson junction of which the potential barrier is formed by local modification is successfully prepared. According to the process, the manufacturing process is simplified, the production cost is reduced, meanwhile, the performance stability of the prepared device is ensured, and the effect of integrated development of the high-temperature superconducting Josephson junction and the superconducting quantum device is achieved.