28 results about "Rms roughness" patented technology

This thin film includes chalcogenide perovskite particles and an organic component that modifies the particles. A mean square roughness of the thin film surface is less than 1000 nm.

In certain examples, a poly crystalline (PC) diamond layer is processed to enhance the layer's TC (thermal conductivity) by a localized anneal confined to a subset region of the layer's processing surface. The temperature(s) of the localized anneal is sufficiently high to have damaged the processing surface if all of the processing surface were subjected to an anneal at such temperature(s). The localized anneal truncates grains extending into or beyond the processing surface to set or correspond with a low roughness attribute (e.g., not more than 1 nm). In another example, the localized anneal is preceded by performing a global anneal. The localized anneal results in unique physical attributes of the PC diamond layer including, e.g., the processing surface not being anneal-damaged, truncated diamond grains sufficient to set or correspond with an RMS roughness measure, and the TC being set as a function of grain sizes in the PC diamond layer and its thickness.

The invention discloses a processing method for obtaining a fused quartz optical element with low surface metal impurity content, which sequentially comprises the steps of blank cutting, milling and grinding forming, laser pretreatment, fine grinding, rough polishing, acid pickling, two times of fine polishing and ion beam fine trimming. A silicon dioxide polishing solution is adopted for carrying out metal-pollution-free polishing, ultrasonic-assisted pickling is used for deeply removing metal impurities, and through the synergistic effect of zero-pressure fine polishing and non-contact ion beam fine trimming, the surface damage layer is finally removed, the surface shape precision is controlled, meanwhile, the content of the surface metal impurities is reduced to the ppb level, and the surface quality is improved. Particularly, the cerium element content is reduced by more than 90%, and an ultra-smooth surface with root-mean-square roughness superior to 0.5 nm is obtained. The method solves the technical problem that low surface roughness and low metal impurity content are difficult to consider in the traditional process, and is suitable for batch and stable manufacturing of high-end optical elements.

The invention discloses a high-quality nitrogen polar GaN material and a low-temperature preparation method thereof, and belongs to the technical field of semiconductor material epitaxial growth. Firstly, a high-temperature GaN template layer is grown on a substrate layer in an epitaxial mode through an MOCVD method, then an InGaN layer is grown on the high-temperature GaN template layer, then a low-temperature GaN layer is grown on the InGaN layer in an epitaxial mode, the alternate growth period of the InGaN layer and the low-temperature GaN layer is 1-30, and the high-quality nitrogen polarity GaN material is obtained. According to the method, a certain amount of TMIn source and H2 are simultaneously introduced in the growth process of the low-temperature GaN by utilizing the obvious etching effect of H2 on In, so that the growth rate of the low-temperature GaN is obviously reduced; in the GaN growth process, In atoms can also play a role of a surfactant, and the root mean square roughness of the surface of the thin film is further reduced. The method can effectively solve the problem of performance deterioration caused by low-temperature growth of the nitrogen polar GaN material while improving the quality of the thin film.

The present invention relates to a process for manufacturing glass sheets with diffuse finish and the resulting glass sheet by this process. The glass sheet is subjected to a series of alternate immersions in acidic solutions and alkaline solutions to remove impurities and waste and to generate a diffuse finish on both sides of the glass sheet. The process generates in the glass sheet in at least one side, a diffuse surface with a peak to valley roughness (Rt) of between 5.8343 μm and 9.3790 μm; an average roughness (Ra) value between 0.8020 μm and 0.9538 μm; an RMS roughness between 0.9653 μm and 1.1917 μm; a solar transmission between 84.8% and 46.50%; a solar reflection between 7.4 and 4.4%; a light transmission between 88.5% and 67.70%; a reflection of light between 6.50% and 5.20%; and UV transmission between 35.60% and 70.20%.

Provided are nanocrystalline graphene and a method of forming the same. The nanocrystalline graphene may include a plurality of grains formed by stacking a plurality of graphene sheets and has a grain density of about 500 ea / μm2 or higher and a root-mean-square (RMS) roughness in a range of about 0.1 or more to about 1.0 or less. When the nanocrystalline graphene has a grain density and a RMS roughness with these ranges, nanocrystalline graphene capable of covering the entirety of a large area on a substrate as a thin layer may be provided.

The invention discloses a non-Gaussian rough surface batch generation method based on moment matching iteration, and the method comprises the steps: firstly obtaining the contour data of an original surface, and extracting the skewness, kurtosis, root-mean-square roughness and power spectrum density features of the original surface; then a moment matching iteration generation model is constructed, surface parameters are adjusted through intelligent initialization and error feedback iteration, Johnson system transformation and frequency domain phase replacement are combined, and a non-Gaussian rough surface contour meeting the final target moment and power spectrum characteristics is generated; and finally, generating a large number of surface samples with consistent statistical characteristics and different details in parallel through a batch output module, and verifying the consistency of the surface samples. The method has the high-precision moment matching and power spectrum maintaining capacity, supports efficient batch generation, and is suitable for engineering simulation and statistical analysis needing a large number of surface samples in the fields of tribology, contact mechanics and the like.

The application discloses a metal foil, a circuit board, a copper-clad laminated board, a semiconductor, a negative material and a battery, the metal foil comprising opposite first and second surfaces, the first surface being a roughening treatment surface, and the second surface satisfying the following functional relationship between the root mean square roughness Rq of the second surface and the water drop angle Y of the second surface: Y=-8273.8*Rq+5309.1*Rq-814.52, Rq>0, 0Y<90°, and the correlation coefficient R of the functional relationship being 0.9735. 2 2 By optimizing the relationship between the root mean square roughness and the water drop angle of the other side surface of the metal foil opposite to the roughening treatment surface, the water drop angle and the roughness of the surface of the metal foil are both within a most reasonable range, the hydrophilicity of the surface of the metal foil is effectively improved, and the quality of the metal foil product is improved.​

A method for transferring a thin film, according to the present invention, induces Marangoni flow by using an organic solvent having a surface tension lower than that of water, and thus enables a thin film to be safely transferred to a separator without damage and wrinkles. Therefore, the surface of the transferred nano-thin film exhibits a low root-mean-square roughness, and the performance of a lithium-sulfur (Li-S) battery comprising same can be significantly improved.

The application discloses a real-time monitoring and early warning software system for VCSEL chip production data, acquires reflected high-purity interference data through a data acquisition module, calculates a theoretical stress value by using a physical modeling unit, generates a trend early warning signal through an early warning decision module, extracts the amplitude of a high-frequency noise component in combination with a perception compensation module, maps the amplitude to a surface height root mean square roughness, and accurately compensates the reflectivity signal by using the roughness. The method realizes real-time monitoring of the epitaxial growth process, effectively improves the accuracy and response speed of stress monitoring, guarantees the reliability and consistency of VCSEL chip growth, and solves the technical problem of high hysteresis of traditional monitoring methods.

Provided is an Ni-Fe-Cr-based alloy pipe having high creep strength and excellent smoothness. In this Ni-Fe-Cr-based alloy pipe, the average grain size number in a cross-section parallel to the axial direction and the thickness direction of the alloy pipe is 5.0 or less, and the root mean square roughness RMS of the inner surface and the outer surface of the alloy pipe is 1.60 μm or less.

The invention discloses low-radiation anti-reflection coated glass for an automobile skylight and a preparation method of the low-radiation anti-reflection coated glass, and belongs to the technical field of vacuum magnetron sputtering coated glass. The coated glass comprises a glass substrate layer and five coating layers sequentially deposited on the surface of the glass substrate layer through a vacuum magnetron sputtering method, wherein the five coating layers sequentially comprise a first silicon nitride film layer, a second silicon oxide film layer, a third indium tin oxide film layer, a fourth silicon oxide film layer and a fifth zirconium oxide film layer from inside to outside; wherein the outer surface of the coating layer is in a 25 [mu] m < 2 > measurement area, the surface average roughness Ra is greater than 1.5 nm, and the root-mean-square roughness Rq is greater than 1.5 nm. The high-hardness and high-toughness zirconium oxide film layer is combined with the compact and stable silicon oxide film layer, and the optical refractive index of each film layer material is optimized, so that the reflection and transmission characteristics of visible light are effectively regulated and controlled, the wear resistance and chemical stability of the film layers are improved, and meanwhile, low radiation, low reflection and good temperable performance are considered.

The invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a semiconductor substrate, a bottom layer, a ferroelectric material layer and a conductive layer. The bottom layer covers the semiconductor substrate. The layer of ferroelectric material covers the bottom layer, where the bottom layer has a surface facing the layer of ferroelectric material, the surface having a root-mean-square roughness of less than 1 nm. The conductive layer covers the ferroelectric material layer.

The present disclosure provides a process. In an embodiment, the process includes providing pellets of a regrind material. The regrind material is a post-consumer recycle multilayer film (PCR multilayer film) having at least three layers. The PCR multilayer film is composed of (i) a polyethylene layer, (ii) a polyamide layer, and (iii) a tie layer. The tie layer is composed of maleic anhydride grafted substantially linear ethylene polymer (MAH-g-SLEP) having a Mw / Mn from 1.5 to less than 3.5 and a melt index from 0.5 g / 10 min to less than 25 g / 10 min. The process includes extruding the pellets to form an extrudate, molding the extrudate, and forming, with the extrudate, a molded article having a surface. The surface of the molded article has a surface roughness value, Sa, less than 1000 nm and a root mean square roughness value, Sq, less than 1400 nm.

The present invention relates to the field of optical adhesive slitting technology, and in particular to an OCA optical adhesive slitting detection method and system. The present invention divides the slitting surface image into multiple local images, so as to facilitate accurate temperature detection and analysis of each local image, thereby avoiding information occlusion or analysis confusion that may occur during overall visual analysis. By obtaining the temperature feature information of each local image and analyzing and judging based on a preset temperature, the flatness of the OCA optical adhesive slitting surface can be detected more accurately and meticulously. Such quantitative analysis can more accurately identify which parts of the slitting surface temperature exceed the preset range. By calculating the root mean square roughness value and evaluating it according to the preset roughness value, the flatness of the OCA optical adhesive slitting surface can be effectively detected and evaluated. By comparing the calculated root mean square roughness value with the preset roughness value, it can be quickly determined whether the flatness of the slitting surface meets the requirements.

A method for texturing a substrate includes 3-D printing a pattern onto a substrate to form a texture. The pattern has a root mean square roughness between 40 to 1000 microns and an autocorrelation function greater than 0.5 for distances less than 50 microns.

The invention relates to a final substrate (S) comprising, successively in contact with each other, a top layer (5) of semiconductor material, a dielectric layer (4) having a thickness greater than 200 nm, an electrical charge trapping layer (2), and a base substrate (3). The final substrate (S) has a curvature of less than 60 micrometers, preferably less than 40 micrometers. An exposed surface of the top layer (5) has a roughness of less than 0.3 nm in root mean square measurement over a 30-micrometer by 30-micrometer area. The invention also relates to a method for preparing such a substrate. Figure 3

The invention discloses a roughness measurement method based on BRDF, and the method is characterized in that the method comprises the following steps: S1, measuring BRDF data of a material; s2, establishing an optical model, and fitting the measured BRDF data to obtain a root mean square slope alpha; s3, establishing a relationship among alpha, Rq and PSD to obtain a root mean square roughness Rq; the PSD is a power spectral density function. According to the method, direct conversion from the BRDF data to the actual surface roughness Rq is achieved by measuring the BRDF data and through a series of mathematical operation and model derivation. Compared with the prior art, the method has higher measurement precision and efficiency, can also be applied to wider material types and surface conditions, can also realize real-time monitoring of the material roughness in a dynamic process, and has important significance for surface quality control of some materials needing to be continuously monitored.

Provided is a method for directly measuring the optical constants (refractive index n, attenuation coefficient kappa) of a fluorine-containing organosilicon compound film having a homogeneous surface and a small surface roughness or haze value with high precision and high reproducibility by ellipsometry. The method for measuring the optical constant of a fluorine-containing organosilicon compound film comprises: a step for forming a fluorine-containing organosilicon compound film on a substrate, the fluorine-containing organosilicon compound film having an arithmetic mean roughness of less than 1.0 nm and a root-mean-square roughness of less than 2.0 nm as surface roughness, and the surface roughness of the fluorine-containing organosilicon compound film being less than 1.0 nm and less than 2.0 nm as surface roughness; the haze value is less than 0.3 and the film thickness is 3-10 nm; and a step of measuring the optical constant of the thin film formed on the substrate by ellipsophotometry.

The invention relates to the technical field of precision machining, particularly discloses a modal analysis system for turbine blade production, aims to solve the problem of pressure control in blade surface quality evaluation and production processes, and aims to obtain a modal analysis result by collecting blade surface images and extracting surface roughness parameters including root-mean-square roughness, maximum height and arithmetic mean roughness. The invention further provides a pressure anomaly detection method, the pressure applied by equipment in the production process is monitored and analyzed in real time, the pressure is adjusted so as to ensure the surface quality of the blade, further, the correlation between the pressure and the surface roughness is analyzed, accurate pressure regulation and control are achieved through a closed-loop control strategy, and the accuracy of the pressure anomaly detection is improved. And the surface quality and the production efficiency of the turbine blade are effectively improved, and the method has important application value in the industries of aerospace, power machinery and the like.

To provide a group-III nitride substrate having good surface flatness while satisfying high carrier concentration, low resistance and low dislocation density.SOLUTION: A group-III nitride substrate comprises a GaN epitaxial layer formed on a GaN substrate, contains oxygen as an impurity element, and includes: a first region showing a first impurity concentration in a surface of a c-surface of the group-III nitride substrate; and a second region showing a second impurity concentration lower than the first impurity concentration. A first dislocation density in the first region is lower than a second dislocation density in the second region. A square average surface roughness RMS value is 10 nm or lower in an optional range of 0.2 mm square in the surface of the group-III nitride substrate.SELECTED DRAWING: Figure 1

A laser device, comprising: a) a substrate (1); b) at least a first in-plane resonator (2); c) a first electrode (6); d) a lasing gain medium (9); and e) a second electrode (11); wherein each resonator (2) comprises at least two solid materials (3, 4) having an electrical conductivity below 3 S / m, wherein two or more of the solid materials (3, 4) differ in their refractive indices, wherein the top surface of the first in-plane resonator (2) is planar and has a root mean square roughness below 5 nm, wherein the first resonator (2) is either a) situated above the substrate (1), or b) comprises a material of the substrate (1) as a first of the at least two solid materials (3, 4), and wherein any further in-plane resonators (2'), if present, are situated above the substrate (1).

A pharmaceutical container for drug delivery includes a barrel configured to slidably receive a stopper, the stopper having a proximal end suitable for contacting a plunger rod and a distal end suitable for contacting a pharmaceutical composition, the stopper having a circumferential surface partially contacting an inner surface of the barrel, a surface roughness of the inner surface of the barrel declines from the stopper's start position to its end position by at least 3% of at least one of Ra roughness or Rms roughness, the inner surface of the barrel having a surface roughness Ra of less than 100 nm.

The invention discloses a titanium alloy welding method for realizing a high-quality joint at an ultralow temperature, and belongs to the field of titanium alloy welding. The invention aims to solve the technical problem of low joint quality in the existing diffusion welding method. According to the method, the to-be-welded surfaces are ground and then polished till the root mean square roughness Rq is not larger than 1.5 nm or the arithmetic mean roughness Ra is not larger than 1.0 nm, the maximum roughness depth Rmax is not larger than 50 nm, and through the multi-heat-source diffusion welding technology of pulse current and radiation heating, the microcosmic good welding effect without hole defects at the ultralow temperature of 450-550 DEG C is achieved. According to the method, the welding rate of a welded joint after welding is nearly 100%, high-quality welding is achieved, the joint has obvious yield and plastic fracture, and the tensile strength can reach 826.8599 MPa.

To provide a pattern forming method using a semiconductor photoresist composition which achieves excellent resolution.SOLUTION: The pattern forming method includes: a step of applying a metal-containing resist composition onto a substrate by a spin coater at a speed of 100-1,500 rpm for 60-120 seconds; a step of performing a heat treatment at 90-200°C for 30-120 seconds in order to form a metal-containing resist film on the substrate; a step of exposing the metal-containing resist film to extreme ultraviolet light or light having a wavelength of 5-150 nm by using a pattern mask; and a development step of removing an unexposed region to form a resist pattern by applying a developer. The surface roughness of the metal-containing resist film having undergone the heat treatment step is a root mean square roughness (Rq) of 1.5 nm or less, an average roughness (Ra) of 1.0 nm or less, and a maximum roughness (Rmax) of 20 nm or less.SELECTED DRAWING: Figure 5

A microarray for immobilizing biomolecules includes a glass or glass-ceramic substrate and a nitrocellulose coating disposed at least regionally on a first planar surface of the substrate. The nitrocellulose coating is configured to serve as an immobilization zone for biomolecules. A layer thickness of the nitrocellulose coating is between 10 and 150 nm, the nitrocellulose coating is optically clear, and the nitrocellulose coating has a root mean square (RMS) roughness of at least 0.5 nm.

The present invention relates to a method for preparing an aluminum nitride thin film and a device based on the aluminum nitride thin film. The preparation method includes: providing an aluminum nitride substrate, the aluminum nitride substrate including a substrate and an aluminum nitride layer having a first temperature, which are stacked; providing a protective layer on a surface of the aluminum nitride layer facing away from the substrate, the protective layer including a concave region and a flat region disposed around an outer periphery of the concave region, and a root mean square roughness RMS of a surface of the flat region facing the aluminum nitride layer ranges from 0 nm < RMS ≤ 50 nm; and performing a thermal annealing treatment on the aluminum nitride substrate and the protective layer to obtain the aluminum nitride thin film having a second temperature; wherein the second temperature is greater than the first temperature. The method for preparing the aluminum nitride thin film can prepare an aluminum nitride thin film with high crystal quality, low defect density, and high surface uniformity.

The present application relates to a kind of size-stable flash nonwoven sheet, characterized in that, the flash nonwoven sheet is at 80±1 ℃, after constant temperature 240 hours, thermal shrinkage rate ≤5%;The root mean square roughness Rq of the flash nonwoven sheet is ≤8 microns;And the pendulum method tear strength of the flash nonwoven sheet is 3~8 N.The long-term high-temperature dimensional stability of the flash nonwoven sheet of the present application, ultra-low surface roughness and moderate tear strength, realize the high clean, high precision, long period, high reliability of packaging protection requirement.