12 results about "Rms roughness" patented technology

In certain examples, a poly crystalline (PC) diamond layer is processed to enhance the layer's TC (thermal conductivity) by a localized anneal confined to a subset region of the layer's processing surface. The temperature(s) of the localized anneal is sufficiently high to have damaged the processing surface if all of the processing surface were subjected to an anneal at such temperature(s). The localized anneal truncates grains extending into or beyond the processing surface to set or correspond with a low roughness attribute (e.g., not more than 1 nm). In another example, the localized anneal is preceded by performing a global anneal. The localized anneal results in unique physical attributes of the PC diamond layer including, e.g., the processing surface not being anneal-damaged, truncated diamond grains sufficient to set or correspond with an RMS roughness measure, and the TC being set as a function of grain sizes in the PC diamond layer and its thickness.

The invention discloses a processing method for obtaining a fused quartz optical element with low surface metal impurity content, which sequentially comprises the steps of blank cutting, milling and grinding forming, laser pretreatment, fine grinding, rough polishing, acid pickling, two times of fine polishing and ion beam fine trimming. A silicon dioxide polishing solution is adopted for carrying out metal-pollution-free polishing, ultrasonic-assisted pickling is used for deeply removing metal impurities, and through the synergistic effect of zero-pressure fine polishing and non-contact ion beam fine trimming, the surface damage layer is finally removed, the surface shape precision is controlled, meanwhile, the content of the surface metal impurities is reduced to the ppb level, and the surface quality is improved. Particularly, the cerium element content is reduced by more than 90%, and an ultra-smooth surface with root-mean-square roughness superior to 0.5 nm is obtained. The method solves the technical problem that low surface roughness and low metal impurity content are difficult to consider in the traditional process, and is suitable for batch and stable manufacturing of high-end optical elements.

The invention discloses a high-quality nitrogen polar GaN material and a low-temperature preparation method thereof, and belongs to the technical field of semiconductor material epitaxial growth. Firstly, a high-temperature GaN template layer is grown on a substrate layer in an epitaxial mode through an MOCVD method, then an InGaN layer is grown on the high-temperature GaN template layer, then a low-temperature GaN layer is grown on the InGaN layer in an epitaxial mode, the alternate growth period of the InGaN layer and the low-temperature GaN layer is 1-30, and the high-quality nitrogen polarity GaN material is obtained. According to the method, a certain amount of TMIn source and H2 are simultaneously introduced in the growth process of the low-temperature GaN by utilizing the obvious etching effect of H2 on In, so that the growth rate of the low-temperature GaN is obviously reduced; in the GaN growth process, In atoms can also play a role of a surfactant, and the root mean square roughness of the surface of the thin film is further reduced. The method can effectively solve the problem of performance deterioration caused by low-temperature growth of the nitrogen polar GaN material while improving the quality of the thin film.

The invention discloses a non-Gaussian rough surface batch generation method based on moment matching iteration, and the method comprises the steps: firstly obtaining the contour data of an original surface, and extracting the skewness, kurtosis, root-mean-square roughness and power spectrum density features of the original surface; then a moment matching iteration generation model is constructed, surface parameters are adjusted through intelligent initialization and error feedback iteration, Johnson system transformation and frequency domain phase replacement are combined, and a non-Gaussian rough surface contour meeting the final target moment and power spectrum characteristics is generated; and finally, generating a large number of surface samples with consistent statistical characteristics and different details in parallel through a batch output module, and verifying the consistency of the surface samples. The method has the high-precision moment matching and power spectrum maintaining capacity, supports efficient batch generation, and is suitable for engineering simulation and statistical analysis needing a large number of surface samples in the fields of tribology, contact mechanics and the like.

The application discloses a metal foil, a circuit board, a copper-clad laminated board, a semiconductor, a negative material and a battery, the metal foil comprising opposite first and second surfaces, the first surface being a roughening treatment surface, and the second surface satisfying the following functional relationship between the root mean square roughness Rq of the second surface and the water drop angle Y of the second surface: Y=-8273.8*Rq+5309.1*Rq-814.52, Rq>0, 0Y<90°, and the correlation coefficient R of the functional relationship being 0.9735. 2 2 By optimizing the relationship between the root mean square roughness and the water drop angle of the other side surface of the metal foil opposite to the roughening treatment surface, the water drop angle and the roughness of the surface of the metal foil are both within a most reasonable range, the hydrophilicity of the surface of the metal foil is effectively improved, and the quality of the metal foil product is improved.​

A method for transferring a thin film, according to the present invention, induces Marangoni flow by using an organic solvent having a surface tension lower than that of water, and thus enables a thin film to be safely transferred to a separator without damage and wrinkles. Therefore, the surface of the transferred nano-thin film exhibits a low root-mean-square roughness, and the performance of a lithium-sulfur (Li-S) battery comprising same can be significantly improved.

The application discloses a real-time monitoring and early warning software system for VCSEL chip production data, acquires reflected high-purity interference data through a data acquisition module, calculates a theoretical stress value by using a physical modeling unit, generates a trend early warning signal through an early warning decision module, extracts the amplitude of a high-frequency noise component in combination with a perception compensation module, maps the amplitude to a surface height root mean square roughness, and accurately compensates the reflectivity signal by using the roughness. The method realizes real-time monitoring of the epitaxial growth process, effectively improves the accuracy and response speed of stress monitoring, guarantees the reliability and consistency of VCSEL chip growth, and solves the technical problem of high hysteresis of traditional monitoring methods.

The invention discloses low-radiation anti-reflection coated glass for an automobile skylight and a preparation method of the low-radiation anti-reflection coated glass, and belongs to the technical field of vacuum magnetron sputtering coated glass. The coated glass comprises a glass substrate layer and five coating layers sequentially deposited on the surface of the glass substrate layer through a vacuum magnetron sputtering method, wherein the five coating layers sequentially comprise a first silicon nitride film layer, a second silicon oxide film layer, a third indium tin oxide film layer, a fourth silicon oxide film layer and a fifth zirconium oxide film layer from inside to outside; wherein the outer surface of the coating layer is in a 25 [mu] m < 2 > measurement area, the surface average roughness Ra is greater than 1.5 nm, and the root-mean-square roughness Rq is greater than 1.5 nm. The high-hardness and high-toughness zirconium oxide film layer is combined with the compact and stable silicon oxide film layer, and the optical refractive index of each film layer material is optimized, so that the reflection and transmission characteristics of visible light are effectively regulated and controlled, the wear resistance and chemical stability of the film layers are improved, and meanwhile, low radiation, low reflection and good temperable performance are considered.

The invention relates to a final substrate (S) comprising, successively in contact with each other, a top layer (5) of semiconductor material, a dielectric layer (4) having a thickness greater than 200 nm, an electrical charge trapping layer (2), and a base substrate (3). The final substrate (S) has a curvature of less than 60 micrometers, preferably less than 40 micrometers. An exposed surface of the top layer (5) has a roughness of less than 0.3 nm in root mean square measurement over a 30-micrometer by 30-micrometer area. The invention also relates to a method for preparing such a substrate. Figure 3

Provided is a method for directly measuring the optical constants (refractive index n, attenuation coefficient kappa) of a fluorine-containing organosilicon compound film having a homogeneous surface and a small surface roughness or haze value with high precision and high reproducibility by ellipsometry. The method for measuring the optical constant of a fluorine-containing organosilicon compound film comprises: a step for forming a fluorine-containing organosilicon compound film on a substrate, the fluorine-containing organosilicon compound film having an arithmetic mean roughness of less than 1.0 nm and a root-mean-square roughness of less than 2.0 nm as surface roughness, and the surface roughness of the fluorine-containing organosilicon compound film being less than 1.0 nm and less than 2.0 nm as surface roughness; the haze value is less than 0.3 and the film thickness is 3-10 nm; and a step of measuring the optical constant of the thin film formed on the substrate by ellipsophotometry.

A pharmaceutical container for drug delivery includes a barrel configured to slidably receive a stopper, the stopper having a proximal end suitable for contacting a plunger rod and a distal end suitable for contacting a pharmaceutical composition, the stopper having a circumferential surface partially contacting an inner surface of the barrel, a surface roughness of the inner surface of the barrel declines from the stopper's start position to its end position by at least 3% of at least one of Ra roughness or Rms roughness, the inner surface of the barrel having a surface roughness Ra of less than 100 nm.

The present application relates to a kind of size-stable flash nonwoven sheet, characterized in that, the flash nonwoven sheet is at 80±1 ℃, after constant temperature 240 hours, thermal shrinkage rate ≤5%;The root mean square roughness Rq of the flash nonwoven sheet is ≤8 microns;And the pendulum method tear strength of the flash nonwoven sheet is 3~8 N.The long-term high-temperature dimensional stability of the flash nonwoven sheet of the present application, ultra-low surface roughness and moderate tear strength, realize the high clean, high precision, long period, high reliability of packaging protection requirement.