434 results about "Bonding process" patented technology

The invention relates to the technical field of building solid waste resource utilization, and discloses a bamboo-based biochar and cement-based waste-based artificial aggregate preparation method, which comprises: using cement-based waste powder as a main raw material, and using ordinary Portland cement and bamboo-based biochar as auxiliary materials, firstly carrying out alkali modification or ultrasonic modification treatment on the bamboo-based biochar, and then carrying out drying to obtain the artificial aggregate based on the bamboo-based biochar and the cement-based waste. The surface property is improved; then mixing the materials, and preparing a regular and uniform aggregate blank by adopting a disc granulation method and accurately controlling the inclination angle and the rotating speed in combination with a reserved dry powder rolling and sticking process; finally, the blank is cured, particularly carbonization curing is adopted, and carbon dioxide and cement hydration products react to generate calcium carbonate to fill internal pores. According to the invention, interface bonding is enhanced through the modified charcoal, the porosity is reduced through carbonization curing, the prepared artificial aggregate has the advantages of high compressive strength and low water absorption, and high-proportion utilization of cement-based wastes is realized.

The invention belongs to the technical field of semiconductor material processing, and relates to a bonding method and a wafer room temperature bonding method, which are executed by a bonding system comprising a film forming chamber, a bonding chamber, a transmission chamber and a bonding point location preparation unit. The method comprises the following steps: forming an active film layer containing unsaturated bond active points on the surface of a wafer; active components are introduced through the bonding point site preparation unit, so that the active components react with the active point sites to form bonding point sites; transmitting the two wafers to a bonding chamber and aligning the two wafers; pressure is applied, and bonding is completed by means of the pressure and the bonding reaction between the bonding points. According to the method, the flat and active bonding surface can be prepared, the lattice structure is not influenced in the bonding process, and the quality of the bonding wafer product can be improved.

The invention discloses a key glass laminating machine and a laminating method, the key glass laminating machine comprises an auxiliary laminating plate, the auxiliary laminating plate is provided with a laminating concave part, the auxiliary laminating plate is used for nesting and placing key glass, and the laminating concave part is used for nesting a bulge of a key; one of the upper glass laminating mechanism and the lower glass laminating mechanism is provided with an auxiliary laminating plate, and the other one is used for placing substrate glass and laminating and assembling the substrate glass and key glass. According to the key glass laminating machine disclosed by the invention, a laminating process technical method of non-planar glass and planar glass of keys is mainly realized, and the problem of laminating bubbles is effectively solved through special equipment laminating platform design and a special laminating process method, and particularly, the problem of bubbles in raised areas and edges of the keys is effectively solved; according to the key touch panel and the manufacturing method thereof, the appearance problem of a product after fitting and assembling is avoided, the quality of the produced key touch panel product meets the requirements of a user, and when the user clicks the key touch panel with a finger, a good physical key mechanical stroke experience feeling is achieved.

The invention provides improved techniques for bonding devices using copper-to-copper or other types of bonds. A substrate is cleaned to remove surface oxides and contaminants and then rinsed. The rinsed substrate is provided to coating unit where a protective coating is applied to the substrate. The protective coating may be applied by immersing the substrate in a bath or via chemical vapor deposition. In an aspect, the protective coating may be copper selective so that the protective coating is only applied to copper features of the substrate. The protective coating minimizes formation of oxides and other bond weakening forces that may form during bonding processes, such as bonding a copper wire to a copper bond pad of the substrate. In an aspect, an annealing process is used to cure the protective coating and remove small imperfections and other abnormalities in the protective coating prior to the bonding process.

The invention provides a wafer bonding device and a wafer bonding method, and belongs to the technical field of photoelectron manufacturing. The bonding device comprises two pressing plates and buffer pads, wherein the buffer pads are arranged on two opposite plate surfaces of the two pressing plates. The problem of non-uniform pressure in the bonding process can be improved, and the yield of the subsequent process is improved.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The present disclosure provides a miniature electrostatic chuck (ESC) for die-to-wafer (D2W) bonding. The ESC can be manufactured using conventional semiconductor processes, incorporating through-silicon-via (TSV) and through-dielectric-via (TDV) structures. The ESC with different sizes can be attached to and detached from a multi-axis robotic arm, allowing optimized D2W bonding processes.

According to the two-dimensional semiconductor stacked device structure and the preparation method thereof provided by the invention, three-dimensional vertical stacking of a two-dimensional semiconductor device is realized through a bonding process of the first interlayer dielectric layer and the second interlayer dielectric layer; the common problems of organic residue introduction, material wrinkling and breakage and the like in a traditional two-dimensional semiconductor film transfer process are effectively solved, so that the integrity and long-term working stability of a stacked structure are remarkably enhanced. Meanwhile, a dielectric layer of a bonding interface is utilized to construct an efficient interlayer isolation barrier, efficient electrical isolation between two two-dimensional semiconductor layers is achieved, the crosstalk problem of threshold voltages in an existing stacking framework is solved, independent and accurate adjustment of the threshold voltages of upper and lower layer transistors is achieved, and higher flexibility is provided for device performance optimization.

Described herein are isolator devices designed to reduce cracking and mechanical stress despite the use of wire bonds made of hard materials (e.g., copper-based). The isolators employ thin film dielectric materials with high dielectric strength and permittivity underneath the top coil (electrode) to enhance the isolation of the device. However, these materials are susceptible to cracking. Described herein are designs in which the dielectric material is partially removed from the isolator. A dielectric layer may be kept in the region(s) where its large dielectric permittivity is particularly beneficial (e.g., near the edge of a coil) but may be removed from the region immediately underneath the bonding pad, where a large amount of pressure is applied during the bonding process. Optionally, a cushion layer is employed to absorb some of the energy produced during the bonding process.

The invention relates to the technical field of bonding equipment displacement compensation, in particular to a high-speed lead bonding equipment motion platform displacement error dynamic compensation method and device, and the method comprises the steps: carrying out the real-time collection of state parameters of a motion platform, and obtaining multi-dimensional real-time monitoring data; based on the multi-dimensional real-time monitoring data, independently estimating real-time characteristic parameters of the platform through a plurality of preset identification algorithms executed in parallel; inputting the real-time characteristic parameters of the platform into a preset multi-error-source coupling prediction algorithm, and calculating to obtain a predicted displacement deviation of the motion platform in a future preset time window; determining a corresponding position precision tolerance interval according to the requirement of the current bonding process step on the positioning precision; establishing a multi-objective optimization problem; and performing rolling time domain solution on the multi-objective optimization problem, generating a collaborative compensation instruction in real time, and executing the collaborative compensation instruction. According to the invention, accurate prediction and collaborative dynamic compensation can be carried out on various time-varying coupling errors under the condition of high-speed motion.

A method for manufacturing a reactor includes a bonding process of joining molded cores with a molded coil with an adhesive, and a welding process of connecting, by welding, the lead wire of a coil to a busbar fixed to the molded core. The coils are attached to respective leg portions. The bonding process includes an applying process of applying the adhesive to the joining surfaces of the respective leg portions of each of the core members, and the inner circumferential surfaces of the respective yoke portions of the core members, a depressing process of spreading the applied adhesive by depression, and a curing process of curing the adhesive.

The utility model discloses a UPVC pipe bonding auxiliary device relates to pipeline installation field, including slide rail, pipeline support block and two bonding direction adjusting block, be equipped with three slider on the slide rail, slider can freely slide along the slide rail, pipeline support block corresponds with the middle slider, its top is equipped with the semicircle concave cavity that is used for supporting UPVC pipeline, and the two bonding direction adjusting block is equipped with the semicircle concave cavity that is used for supporting the UPVC pipeline. Through the design of the pipe fitting concave cavity formed by combining the cross-shaped concave cavity and the round concave cavity at the bottom, the bonding direction adjusting block can position and support the UPVC pipe fittings, the angle between the two UPVC pipe fittings in the bonding process is ensured to meet the requirements (such as 0 degree, 90 degrees and 180 degrees), the problem of deviation caused by manual naked eye judgment is thoroughly solved, the production efficiency is improved, and the production cost is reduced. And it is ensured that the bonded pipeline is installed in place at a time, reworking is avoided, waste of materials is reduced, and working efficiency is improved.

This invention relates to the field of semiconductor packaging technology, and in particular to a multi-chip wafer packaging system, comprising a mounting frame, a first frame and a mounting bracket located circumferentially around the first frame, a first feeding mechanism for placing a first wafer within the first frame, a mounting plate and a drive component for lifting the mounting plate on the mounting bracket, a second frame within the mounting plate, and a second feeding mechanism for placing a second wafer within the second frame, both the first and second wafers having alignment marks, and a reflective component on the mounting frame for simultaneously reflecting the alignment marks on the first and second wafers to the same plane, and a reading device on the mounting frame. This application helps improve the alignment accuracy of the two wafers during the bonding process, thereby improving the bonding accuracy between the two wafers, and further helping to improve the yield after wafer packaging.

The invention discloses a packaging bonding process basket level process time accurate control method and a related device, and the method comprises the steps: carrying out the one-to-one mapping of basket physical slot positions and virtual slot positions, and setting the basket level process time, the batch level process time and the single chip level process time; obtaining the time sequence correlation information of the wafer in each virtual slot, and dynamically calculating the processing sequence of each basket under the process time of the basket level, the batch level and the single wafer level based on a multi-factor priority scheduling algorithm according to the time sequence correlation information of the wafer in each virtual slot; and in the process of machining according to the machining sequence of the lifting baskets, the machining sequence of the lifting baskets, the batches and the single pieces is dynamically adjusted. According to the invention, the processing sequence of lifting baskets, batches and single wafers is dynamically adjusted, so that the continuity and consistency of the wafers in the production process can be better ensured. By considering the time sequence association information, the wafer quality difference caused by an improper processing sequence can be avoided, and the overall product quality is improved.

The application discloses a semiconductor chip bonding method, which can be used in the field of semiconductor packaging. In the method, first, bonding material is attached to the back of a target circuit sheet with a bonding structure; then, known good chips are selected from chips contained in the target circuit sheet; then, the known good chips are correspondingly bonded into a plurality of recesses formed in the target wafer to obtain a reconstructed wafer; the bonding material is in contact with the bottom surface of the recess; finally, the reconstructed wafer is bonded through a wafer-to-wafer hybrid bonding process. Thus, through the known good chip screening and wafer reconstruction, the serial patching of the traditional D2W is converted into wafer-level overall bonding, the equipment throughput and production efficiency are greatly improved, the good chip-to-good chip bonding is realized, the bad chip matching is reduced, the composite yield after bonding is significantly improved, and the packaging cost is reduced.

To provide a thermoelectric device for easy positioning and bonding processes and a thermoelectric stack for such device. A representative embodiment of the present invention is a thermoelectric stack comprising a thermoelectric material layer having a first surface and a second surface opposite each other and an isolation layer stacked on the first surface of the thermoelectric material layer, wherein the thermoelectric material layer has a magnetization component perpendicular to the first surface and the second surface, and the isolation layer comprises, when a second thermoelectric stack is stacked on the surface opposite to the surface on which the thermoelectric material layer is to be stacked, an insulation region that electrically insulates the thermoelectric material layer and an electrode region that electrically conducts the thermoelectric material layer. Also, a representative embodiment of the present invention is a thermoelectric device in which such thermoelectric stacks are stacked, wherein a plurality of first thermoelectric stacks in which thermoelectric material layers have positive transverse thermoelectric power and a plurality of second thermoelectric stacks in which thermoelectric material layers have negative transverse thermoelectric power are alternately brought into close contact with each other due to the magnetic force of their magnetized components, interposing their respective isolation layers, and are electrically connected by electrode regions of the isolation layers.

This invention discloses a two-dimensional material transfer device and method. The device includes a base, with a first motor-driven angle adjustment unit fixed to the right half of the base; a cantilever is horizontally arranged to the left on a first slide, and a tape roll is located above the cantilever. A second ball screw assembly is horizontally arranged on the left half of the base, and vertical fixing frames are fixed to the front and rear sides of the second slide respectively; a support frame is located in the lower half between the two vertical fixing frames; a platform is located in the upper half between the two vertical fixing frames, and a height adjustment unit is located between the support frame and the platform; the platform is located below the tape pressure roller. This invention utilizes a multi-degree-of-freedom coordinated motion system consisting of a vertical displacement axis, a horizontal displacement axis, and a rotating axis that can drive the vertical axis to achieve continuous angle adjustment, enabling precise control of angle, speed, and roller pressure during the peeling and bonding process of two-dimensional materials.

The radome bonding tool comprises a chassis base internally provided with a containing cavity, a telescopic arm extending in the vertical direction is slidably connected to the position, on one side of the containing cavity, of the chassis base, a pressing roller assembly is rotationally assembled at the top end of the telescopic arm, and one end of the pressing roller assembly extends in the horizontal direction; the compression roller assembly is arranged on the antenna main body and is rotationally connected with the gear roller assembly through an elastic connecting piece, the compression roller assembly is configured to compress a glue film on the antenna main body, the gear roller assembly is configured to imprint the compressed glue film to form corrugated lines, the compression roller assembly is hollow, and a plurality of steel balls are arranged in the compression roller assembly. And the plurality of steel balls are configured to jump up and down along with the rotation of the compression roller assembly so as to assist the adhesive film in discharging bubbles generated during surface mounting while compacting the adhesive film. The arc-shaped protrusions are arranged in the compression roller assembly, the rotary motion of the compression roller is converted into micro-vibration generated by irregular collision of the steel balls, and therefore the surface tension of bubbles is damaged through vibration, and the micro-bubbles are actively discharged.

The invention discloses a method for improving the peel strength of an AlN copper-clad plate through Zn < 2 + > pretreatment and the AlN copper-clad plate, and the method comprises the following steps: pretreatment of an AlN ceramic substrate: coating the surface of the AlN ceramic substrate with a Zn < 2 + >-containing solution for activation treatment, and carrying out high-temperature oxidation treatment after activation treatment to form an oxide layer on the surface of the AlN ceramic substrate; copper sheet pretreatment: preparing a Cu2O film on the surface of the copper sheet, and drying for later use; and preparing the AlN copper-clad plate: tightly attaching the surface of the copper sheet with the Cu2O film to the surface of the AlN ceramic substrate with the oxide layer, and then performing high-temperature cladding. The composition of the oxidation layer on the surface of the oxidized AlN substrate is effectively changed, the surface roughness of the oxidation layer is improved, the surface area of the oxidation layer is increased, the wetting ability of Cu-O eutectic liquid in the bonding process is improved, the peel strength of the AlN copper-clad plate is enhanced, the peel strength is improved by about 14%, the bonding performance is further improved, the operation mode is simple, and the cost is low. The method is easy to implement and has good popularization and application value.

The invention discloses a bonding device and a bonding method, the bonding device comprises a bonding head, the pickup surface of the bonding head is provided with an adsorption device, and the adsorption device is used for picking up a first element; and the movable assembly is arranged on the pickup surface, the movable assembly is provided with a sensing device, the sensing device obtains the shape information of the first element to determine a bonding contact point on the first element, and the movable assembly acts on the bonding contact point to bond the first element to the second element. That is, in the application, the morphology information is determined by determining the acting force of the adsorption device on the first element, then the bonding contact point is determined, and then the first element and the second element are bonded by using the bonding contact point through the movable assembly, so that the formation of bubbles in the bonding process can be effectively avoided, and the yield of the semiconductor device is improved.

This invention discloses a stepped high-power-density solid-state relay structure and its assembly method. The relay structure includes a control component, a power component, and a cover plate. The power component includes a two-channel DC structure, a two-channel bidirectional structure, and a four-channel combined structure, all composed of a ceramic housing, a light-emitting diode chip, and a power chip. The ceramic housing has a cavity, and the interior of the cavity is divided into a first step, a second step, and a third step from bottom to top. The light-emitting diode chip is disposed on the first step. The front of the control component is bonded to the interior of the power component, and the back of the control component is electrically connected to the interior of the power component, forming an assembly. The assembly is hermetically sealed to the cover plate. The assembly method includes the following steps: S1: control component assembly; S2: power component assembly; S3: assembly of the assembly; S4: finished product assembly and sealing. This application achieves a compact assembly of the control component and the power component by adding a compact stepped structure and using a double-sided bonding process, thereby improving the power density of the device.

This invention provides a wafer matching method and apparatus, a fabrication method, an electronic device, and a storage medium. The wafer matching method includes: obtaining a set of influence factors for multiple first wafers and multiple second wafers; obtaining a set of principal component factors by dimensionality reduction based on the set of influence factors; determining the degree of matching between each first wafer and each second wafer based on the set of principal component factors; and selecting a second wafer that matches the first wafer from the multiple second wafers based on the degree of matching. This invention not only reduces the workload in determining the degree of matching between wafers by using the set of principal component factors to represent all influence factors, thus improving the production efficiency of 3D memory, but also ensures optimal and stable matching between the first and second wafers by matching the degree of matching, thereby improving the reliability of 3D memory devices fabricated by bonding processes.

The invention discloses an etching and strengthening composite processing technology for ultrathin flexible glass, which is applied to the field of glass, and is characterized in that the ultrathin flexible glass is supported by using the rigidity of a carrier plate by introducing a raw sheet detection and carrier plate bonding process, so that the stability of the ultrathin flexible glass in the spraying etching and ink fading cleaning process is remarkably improved, and the production efficiency is improved. The warping and fracture risks are effectively reduced; meanwhile, the glass monomers are still fixed on the carrier plate after being sprayed and etched, so that the step of recollecting and fixing the glass monomers after etching is omitted, the process is simplified, and the production line efficiency is improved; in addition, through the dispensing mechanism and the intelligent typesetting module, the silk-screen pattern is simulated and projected to the carrier plate, and the glue is uniformly dispensed according to the silk-screen pattern, so that the bonding stability of the glass and the carrier plate is enhanced; through the defect identification module and the intelligent typesetting module, the original sheet defect area can be directly typeset into the etching area, and the original sheet defect area and the etching area are removed during spraying and etching, so that the defect treatment process is simplified, and the utilization rate of the original glass sheet is improved.

The utility model discloses a blue film OPP adhesive tape without adhesive residue, which comprises a base material layer, the base material layer is made of a polypropylene film, a bonding layer is arranged on the lower surface of the base material layer, an adhesive residue prevention layer is arranged on the lower surface of the bonding layer, sieve holes are arranged in the adhesive residue prevention layer, the sieve holes are communicated with the upper end and the lower end of the adhesive residue prevention layer, and the adhesive residue prevention layer is arranged on the lower surface of the bonding layer. And a connecting block is fixedly connected between the anti-residual adhesive layer and the base material layer. The upper end and the lower end of the adhesive residue prevention layer are communicated through the screen holes formed in the adhesive residue prevention layer, so that glue can be uniformly distributed in the bonding process, excessive permeation of the glue is limited, the glue is prevented from excessively permeating the surface of an adhered object, the possibility of adhesive residue is reduced, the glue is more uniformly distributed in the bonding process due to the screen holes, and the effect of no adhesive residue is achieved; the material of the adhesive residue prevention layer and the material of the connecting block are the same as the material of the base material layer, so that the compatibility and the stability among the layers are ensured, and the risk of adhesive residue caused by mismatching of the materials in the use process of the adhesive tape is further reduced.

The invention provides a manufacturing method of a hybrid filter, and the method comprises the steps: providing a first substrate, and forming a piezoelectric layer on the first substrate; forming a first electrode and a bonding layer on the piezoelectric layer; an etching groove and a connecting conductive column are formed in the bonding layer, the first electrode at the preset position is exposed in the etching groove, and the connecting conductive column penetrates through the bonding layer and is connected with the piezoelectric layer and / or the first electrode; a second substrate is provided, a passive element and a leading-out conductive column are arranged in the second substrate, the leading-out conductive column is electrically connected with the passive element, the bonding layer and the second substrate are bonded, and the leading-out conductive column is electrically connected with the connecting conductive column; the first substrate is removed, and a second electrode is formed on the side, away from the second substrate, of the piezoelectric layer. According to the manufacturing method of the hybrid filter, the passive element is arranged in the second substrate, integrated connection of the passive element is achieved in the bonding process of the bonding layer and the second substrate, the process is simple, the device size can be reduced, and the cost can be reduced.

The utility model discloses a bonding device for lining paper production equipment, which comprises a base, and the top of the base is fixedly connected with a support frame. Through cooperation of the base, the supporting frame and the winding roller, the winding roller is convenient to replace, lining paper is convenient to wind, production efficiency is improved, dust and other impurities on the lining paper can be sucked away in time before the bonding process through a dust suction system composed of the portal frame, the dust collector, the flow divider, the dust suction head and the dust collection box, and the bonding quality of the lining paper is improved. According to the lining paper gluing device, impurities are prevented from affecting the gluing effect, the gluing quality is improved, then a bearing frame, a bearing plate, a lifting groove, a lead screw, a lifting block, a sliding block, a rotating shaft and a gluing roller are matched, the lead screw is driven by a lifting motor to enable the gluing roller to ascend and descend, and the lining paper gluing device can adapt to lining paper of different thicknesses; glue pumped out by the glue pump in the liquid storage tank can be uniformly coated on lining paper, and the bonding effect is ensured.

The invention relates to a method of directly bonding (200) a first microelectronic device (100) on a second microelectronic device, comprising: providing a first device having a first flat surface (110) and a second device having a second flat surface (210), at least the first and second surfaces are treated with a plasma gas comprising at least a first fluorine-containing gas (having an atomic percentage F of fluorine), the first and second devices are transferred to a bonding apparatus, the first and second surfaces are immersed in a bonding atmosphere (1), and the first and second surfaces are bonded under the bonding atmosphere. By cooperatively controlling the atomic percentage F of fluorine and the relative humidity RH, the bonding speed Vc is less than or equal to 15 mm / s, more particularly less than 10 mm / s. The reduced bonding speed significantly reduces the deformation in the bonding process, and can obtain sufficiently high bonding energy, thereby ensuring good bonding between the two surfaces.

The present application relates to the technical field of stiffened wallboard bonding, in particular to a complex curvature stiffened wallboard co-bonding inner cavity auxiliary tool and bonding process. It comprises a connecting piece, a supporting assembly and an auxiliary piece. The connecting piece penetrates each supporting assembly in turn. Multiple supporting assemblies are distributed along the length direction of the omega-shaped rib on the complex curvature stiffened wallboard. The auxiliary piece wraps each supporting assembly along the length direction of the omega-shaped rib and is used to support the inner cavity of the omega-shaped rib. The purpose of the complex curvature stiffened wallboard co-bonding inner cavity auxiliary tool and bonding process is to solve the problems of high cost, great manufacturing difficulty, poor quality stability and difficult subsequent processing in the manufacturing process of the existing complex feature omega-shaped stiffened wallboard.

The present invention relates to a hydroentangled shell (16), in particular a hydroentangled shell (16) for manufacturing a nonwoven fabric (12), preferably a non-porous nonwoven, by means of a web bonding process using a fluid jet (20). The housing (16) includes a body including interconnected dams (36). The body has a front side (52) that directs the fluid jet during use of the fluid jet and a back side (54) opposite the front side (52). The dam (36) defines an opening (34) configured to allow fluid to pass from the front side to the back side. The dam (36) has a shaped fluid jet rebound surface (50) configured to establish a laterally oriented rebound effect of the fluid jet. In one embodiment, the resilient surface (50) includes differently inclined portions (38, 40, 44, 44 ', 46) on the front side (52).

The invention discloses a novel method for preparing a metal bonding substrate. A method may include providing a ceramic substrate including a ceramic body. The method may include bonding a thick metal plate to the ceramic substrate, where the bonding includes forming a metal oxide layer by powder deposition on a metal surface and bonding the ceramic substrate and the thick metal plate together, where after the bonding, the ceramic substrate and the thick metal plate are bonded together. The metal oxide layer and the thick metal plate interact to form an interfacial layer between the thick metal plate and the ceramic substrate.