1600 results about "Bonding process" patented technology

The invention discloses an AI-driven gold bonding wire process parameter optimization method and system, and relates to the technical field of semiconductor packaging, and the method comprises the steps: building a dual-channel deep learning network of a bonding process; the dual-channel deep learning network comprises a dynamic parameter optimization channel and a static parameter optimization channel; inputting bonding process dynamic data collected in real time and preset bonding process static data into the dynamic parameter optimization channel to obtain a dynamic process evaluation index; inputting preset bonding process static data into the static parameter optimization channel to obtain a static process evaluation index; and fusing the dynamic process evaluation index and the static process evaluation index through an adaptive weight fusion algorithm to obtain a comprehensive evaluation index, and optimizing the bonding process parameters. According to the invention, dynamic and static data are integrated through a dual-channel deep learning network architecture, intelligent and accurate optimization of bonding process parameters is realized in combination with an adaptive weight fusion algorithm, and the bonding quality and process stability are significantly improved.

A ring for photoplethysmographic (PPG) sensing performs transmissive PPG and / or reflective PPG. In particular, a ring and assembly methods therefor are described including for example connecting a rim to an inner ring via a bonding process, laying a printed circuit board (PCB) on the inner ring, aligning optical sensors of the PCB with ports of the inner ring, providing electrical connections between contact points on the PCB and the rim, and inserting an assembly including the ring, inner ring and PCB into an outer shell.

The invention discloses a power source power optimization method, system and device of a copper wire system and a storage medium, and relates to the technical field of bonding copper wire production, and the method comprises the following steps: building an intelligent bonding copper wire system simulation model, obtaining virtual parameters based on the intelligent bonding copper wire system simulation model, and optimizing the virtual parameters; the optimized virtual parameters are applied to actual bonding equipment, and the actual power and the bonding effect of the bonding equipment are collected. According to the intelligent bonding copper wire system, the energy efficiency can be remarkably improved through power optimization of a power source, in the field of semiconductor packaging and microelectronic manufacturing, a traditional bonding process often depends on fixed power setting, the setting cannot adapt to different working conditions and material characteristics, energy loss and unstable bonding quality are caused, and the energy efficiency is affected. By optimizing the power of the power supply in real time, the method reduces unnecessary power consumption, reduces the production cost, and improves the bonding quality at the same time.

The invention discloses a bonding silver wire quality detection method and system, and relates to the technical field of bonding quality detection.The bonding silver wire quality detection method comprises the steps that a thermal infrared imager is adopted to scan a bonding area, and temperature field distribution data in the bonding process is obtained; scanning the bonding area by adopting a magnetic conductivity measuring probe to obtain magnetic conductivity distribution data of the bonding area; performing 10 * 10 grid division on the bonding area, and performing feature extraction on the temperature field distribution data and the magnetic conductivity distribution data based on divided grids to obtain thermal feature parameters and magnetic feature parameters; and calculating a bonding silver wire quality score according to the thermal characteristic parameters and the magnetic characteristic parameters, and judging the bonding quality of the silver wire according to a score result to obtain a bonding quality evaluation result. According to the method, the limitation of traditional single parameter detection is broken through, the accuracy and reliability of bonding quality evaluation are remarkably improved, and a systematic technical support is provided for improvement of the bonding process level.

The invention discloses a copper wire bonding process for a silicon carbide power device chip after copperization, and relates to the technical field of chip manufacturing, and the copper wire bonding process comprises the following specific steps: step 1, chip pretreatment: preparing the silicon carbide power device chip, placing the chip in a cleaning tank, and cleaning the silicon carbide power device chip; the method has the advantages that the nickel layer, the metal palladium layer and the metal copper layer with the specific thickness and sequence are evaporated on the surface of the chip, the buffer layer with the gradient structure is prepared, the plating uniformity and the appropriate thickness are ensured through the accurately-controlled electrode layer evaporation process, the problems of wafer warping, buffer failure and the like are solved, and the production efficiency is improved. A stable electrical connection basis is provided for the chip, the elasticity modulus of the gradient structure of the buffer layer can be gradually reduced from contact with the electrode layer to contact with the copper wire according to the stress distribution characteristics, the stress dispersion effect is greatly improved, the reliability of the chip in the bonding and subsequent use processes is remarkably improved, the service life of the chip is prolonged, and the production cost is reduced. And the risk of product failure caused by chip damage is reduced.

The invention provides a semiconductor device and a manufacturing method thereof. The manufacturing method comprises the following steps: providing two wafers to be mixed and bonded; forming a bonding layer; etching the metal layer of the first wafer to enable the surface of the metal layer to be lower than the surface of the dielectric layer; forming a nano bridge metal layer on the surface of the metal layer of the first wafer; forming a nano bridge dielectric layer; bonding the first wafer and the second wafer; leading out a metal connecting piece; and applying voltage by using the metal connecting pieces so as to conduct the nano-bridge dielectric layer between the metal layers. According to the invention, the nanometer bridge structure is formed in the metal bonding area of the first wafer and the second wafer, so that metal bonding is realized by using the nanometer bridge structure under a power-on condition, metal layers do not need to be bonded by using annealing thermal expansion, and the height of the metal layers relative to a dielectric layer and the surface pattern of the metal layers do not need to be strictly controlled; and high-temperature annealing is not needed, so that the process difficulty is reduced, the performance of the device is ensured, and the problems of high difficulty and influence on the performance of the device in the existing mixed bonding process method are solved.

The invention relates to the field of carbon fiber container processing equipment, in particular to a large-size flange roundness correction tool which comprises two fixing frames, a plurality of positioning devices and a plurality of positioning devices, the two fixing frames are oppositely arranged, and at least one fixing frame is arranged to be capable of linearly moving so that the two fixing frames can move back to back and close to each other; and the two shaping rings are connected with the fixing frames respectively, a plurality of adjusting pieces capable of stretching out and drawing back in the radial direction of the shaping rings are arranged on the shaping rings in the circumferential direction of the shaping rings at intervals, and connecting parts capable of being connected with flanges are arranged at the inner ends of the adjusting pieces. According to the device, the shape of a flange subjected to roundness correction can be kept stable in the bonding process through the shaping ring, and the problems existing in the prior art are effectively solved.

The invention relates to a preparation method and system of a high-performance electronic tag in the field of electronic tag manufacturing, and the method comprises the steps: obtaining the working parameters of a high-frequency / NFC electronic tag in a high-temperature environment, analyzing the conductivity change trend of an antenna material, building a mathematical model of the influence of the high-temperature environment on the antenna material, and obtaining the high-performance electronic tag according to the model. Adjusting the component proportion of the antenna material to obtain an optimized antenna material formula; on the basis of optimizing an electromagnetic shielding scheme, comprehensive performance data of a high-frequency / NFC electronic tag in different environments are collected, a performance prediction model under the coupling action of multiple environmental factors is established, the model is adopted to simulate the working state of the tag in a complex working condition, and the performance stability of the tag is judged; after an antenna pattern is precisely processed, characteristic data of all layers of materials of the high-frequency / NFC electronic tag are collected, a relation model of material characteristics and bonding strength is established, and interlayer bonding force is enhanced by adopting a plasma surface treatment technology, so that an optimized bonding process scheme is obtained.

The invention provides a chip bonding device and method. The chip bonding device comprises a bonding head used for adsorbing a chip to be bonded and adjusting the pose of the chip; the infrared vision system is used for penetrating through the chip so as to acquire images of the first mark on the back surface of the chip and the second mark at the target bonding position of the chip; and a controller configured to: acquire, via the infrared vision system, an image with the first marker and the second marker; analyzing the image to determine the poses of the first mark and the second mark in the image; adjusting the pose of the bonding head according to the pose difference of the first mark and the second mark in the image, so that the chip is aligned with the target bonding position; and bonding the chip to the target bonding position through the bonding head. According to the invention, extra errors caused by using a calibration sheet as an intermediate medium in the bonding process can be avoided, the bonding precision is improved, and the bonding process is simplified, so that the bonding efficiency is improved, and the productivity of equipment is improved.

The invention discloses a wafer-level low-temperature bonding process and a wafer bonding structure based on a smooth surface transfer method, which can realize wafer-level bonding in an air environment and under a low-temperature condition, and the bonding strength reaches the national military standard. According to the wafer-level low-temperature bonding process, firstly, a first bonding metal layer with the root mean square surface roughness smaller than 1 nm and the micron-level thickness is prepared through a transfer method; then, carrying out plasma treatment on the smooth first metal surface of the first bonding metal layer; and finally, heating and pressurizing bonding is carried out in an air environment, so that low-temperature wafer bonding is realized.

The invention belongs to the field of hybrid bonding, and particularly discloses a bonding head for hybrid bonding and a bonding method.The bonding head comprises a bonding head body, the lower surface of the bonding head body is of a horizontal structure, and an annular air pressure groove with a downward opening is formed in the lower surface of the bonding head body along the edge; the positive-negative air pressure device is used for adjusting the air pressure in the annular air pressure groove; and the moving rod assembly comprises a main moving rod and a plurality of auxiliary moving rods, the main moving rod and the auxiliary moving rods penetrate through the bonding head body, and the auxiliary moving rods are arranged around the peripheral side of the main moving rod. According to the bonding head, the annular air pressure groove is formed in the bonding head body, the adsorption force on the to-be-bonded chip is increased, in the bonding process, the main moving rod and the auxiliary moving rod can push the to-be-bonded chip to enable the to-be-bonded chip to have enough deformation quantity, the chip cannot be separated from the bonding head body, the bonding effect of hybrid bonding is improved, and the bonding efficiency is improved. And voids on the bonding interface are avoided.

The invention provides a fitting method for a vehicle-mounted curved surface display module, and the method comprises the steps: obtaining temperature data collected by a sensor, and generating an environment temperature sequence containing a timestamp and a temperature value; determining a fitting strength predicted value according to the environment temperature sequence; if the fitting strength predicted value exceeds a preset strength threshold value, determining a fitting parameter adjustment coefficient according to historical data; obtaining a fitting process parameter combination corresponding to the adjustment coefficient from a preset database, and generating an optimized fitting parameter set; inputting the optimized fitting parameter set into a control system, adjusting fitting equipment parameters, and monitoring to generate a fitting strength real-time sequence; and if the fluctuation amplitude of the fitting strength real-time sequence is smaller than a preset fluctuation threshold value, storing the fitting parameter set and the environment temperature sequence to a database.

The invention relates to a double-camera precision positioning method and device in a bonding system, equipment and a storage medium, and the method comprises the steps: collecting and continuously monitoring a bonding tool and a bonding interface through a first camera and a second camera, and obtaining a bonding image; carrying out image processing on the bonding image and extracting features, and obtaining the position and posture of a bonding tool and geometric features of a bonding area; obtaining a current moving path of the bonding tool through a pre-constructed bonding path planning model, and outputting an instruction for controlling the bonding tool to carry out chip bonding according to the current moving path; and the first camera and the second camera are utilized to monitor the bonding process of the bonding tool executing the bonding operation according to the current moving path in real time, so that the purpose of performing high-precision and high-efficiency positioning and completing chip bonding through the double cameras in a bonding system in a complex temperature environment is achieved.

The invention discloses a helium detection device and method for the airtightness of a bonding interface and a bonding microcavity, and belongs to the field of the airtightness of MEMS devices. The device comprises a sample holder, a mass spectrometer, a molecular pump, a mechanical pump and other components, helium is used as detection gas, and the helium is leaked only through a bonding interface through a customized and processed test sample and sample holder structure, so that the interference of other leaks in a non-bonding area on a test result is avoided. The testing method comprises the steps of sample introduction, vacuum pumping, helium filling, signal detection, dynamic and steady state testing and the like, the helium leak rate is monitored in real time by combining with a helium mass spectrometer, and the minimum leak detection rate is that high-sensitivity air tightness detection is ensured. According to the method, the airtightness of the bonding interface can be independently evaluated, and a reliable basis is provided for development of a novel bonding process. The method is suitable for air tightness detection and evaluation of the bonding process in MEMS device processing and manufacturing.

A disposable facemask is provided having a filter body with an opening sized to cover the nose and mouth of a wearer. The filter body further includes an outer mask layer and an inner mask layer, and one or more intermediate layers disposed between the outer and inner mask layers. At least one of the intermediate layers is a nonwoven web layer including thermoplastic filaments formed from a random copolymer, or a random copolymer blended with a homopolymer.

The invention discloses an alloy bonding process parameter optimization method and system, and relates to the technical field of data processing, and the method comprises the steps: presetting a target microstructure state, and constructing an evaluation index system; actual microstructure data of a bonding interface in the alloy bonding process are obtained, and key evolution characteristics are marked to determine the thickness of a diffusion layer and grain size distribution; by comparing the actual microstructure data with the target microstructure state, a relation model of process parameters and microstructures is established, and first prediction is completed; analyzing the dynamic characteristics of the diffusion layer through the result of the first prediction, and completing second prediction in combination with a thermodynamic-diffusion threshold value; and deducing an optimal process parameter combination through a second prediction result to realize a target microstructure state. According to the method, the problems of target fuzziness, insufficient model precision and the like are effectively solved, the bonding quality and stability are remarkably improved, the rejection rate and the cost are reduced, and an innovative solution is provided for high-performance material processing.

A manufacturing method of a micro-suspension structure comprises the steps that a semiconductor substrate is provided, and a double-face dielectric layer is formed on the semiconductor substrate; etching the dielectric layer on the upper surface of the semiconductor substrate to form a release window; etching the semiconductor substrate through the release window to form a silicon groove with the required depth; and etching by adopting an anisotropic wet etching process to form the micro-suspension structure of the dielectric layer. According to the manufacturing method of the micro-suspension structure, provided by the invention, the semiconductor substrate is etched to form the silicon groove with a certain depth and then is etched by adopting an anisotropic wet etching process, so that the size of a device can be effectively reduced while the blind cavity is formed on the substrate, and the requirements of cavity release on the size and shape of a release window are reduced; and a suspension film structure with a small release window is formed, so that the dependence of cavity manufacturing on a bonding process is further reduced.

The invention relates to a preparation method of a single-crystal piezoelectric film bulk acoustic resonator, and relates to the field of semiconductor device production processes, and the preparation method comprises the following steps: S1, preparing a single-crystal piezoelectric film and an electrode layer on a first substrate; s2, patterning the single crystal piezoelectric film and the electrode layer; s3, temporarily bonding the supporting slide glass with the first substrate through the adhesion layer; s4, removing the first substrate; s5, etching a photoetching through hole in the thin film body; s6, depositing metal to form a connecting part and a lower electrode; s7, processing a cavity structure on the second substrate; s8, preparing a transition layer on the surface of the second substrate; s9, removing the first part; s10, preparing a bonding layer on the second substrate; s11, processing a communication hole in the bonding layer and removing the second part; s12, bonding the lower electrode and the second substrate; and S13, removing the supporting slide glass and the adhesion layer. The method has the advantages that the bonding material uniformly covers the surface of the second substrate and the cavity structure, weak points are prevented from being formed at the cavity structure, and the reliability and stability of the bonding process are remarkably improved.

The utility model discloses an environment-friendly paper cup ultrasonic bonding device which comprises a working table, an electric sliding rail is installed above the working table, a sliding block is installed above the electric sliding rail, a supporting block is fixed above the sliding block, a forming cylinder is fixed to one side of the supporting block, a supporting frame is fixed to one side above the working table, and the supporting frame is fixed to the other side above the working table. A hydraulic cylinder is installed above the supporting frame, and a hydraulic rod is installed below the hydraulic cylinder. According to the ultrasonic bonding device for the environment-friendly paper cups, through cooperative use of a hydraulic cylinder, a hydraulic rod, a telescopic rod, a spring and a machine head, during production and processing of the device, the machine head is driven by the hydraulic cylinder to descend, so that the environment-friendly paper cups can be bonded, and meanwhile in the bonding process, after the machine head makes contact with the surfaces of paper cup raw materials, the paper cup raw materials are bonded; and by arranging the springs and the telescopic rods, a certain buffering effect can be achieved, paper cup raw materials are prevented from being damaged due to the fact that direct contact impact force is too large, and the yield of environment-friendly paper cup production and processing is effectively improved.

The invention discloses a manufacturing method of a semiconductor structure. The manufacturing method comprises the following steps: providing a first substrate and a second substrate; a bonding process is carried out to bond the first substrate and the second substrate with each other and form a bonding structure, the bonding process comprises a plurality of process steps carried out by using a plurality of independent machines in a plurality of work stations, and the bonding process comprises the following steps: forming a bonding layer on the first substrate by using a film layer forming device, forming a first substrate structure comprising a first substrate base plate and a bonding layer; performing a planarization process on the bonding layer of the first substrate structure by using planarization equipment; performing a cleaning process on the first substrate structure by using cleaning equipment; performing surface activation treatment on the bonding layer of the first substrate structure by using plasma generation equipment; performing a pre-bonding process in a bonding machine so as to pre-bond the first substrate structure to the second substrate base plate and form a pre-bonded structure; and performing an annealing process on the pre-bonding structure by using annealing equipment, and forming a bonding structure.

The invention relates to a wind driven generator based on fiber bragg grating sensing detection and a detection method. The wind driven generator comprises a wind power blade embedded with a fiber bragg grating sensor and an optical fiber signal monitoring terminal. The wind power blade comprises a blade body and further comprises a composite material sensing unit poured into the blade body in the manufacturing process of the blade body. The composite material sensing unit comprises a composite material and a fiber bragg grating pre-embedded in the composite material, and the fiber bragg grating is connected with a fiber signal detection terminal. Compared with the prior art, the device can be pre-embedded in any part of the blade, does not need an additional bonding process, can cover the whole length range of the blade, realizes comprehensive defect detection of structural parts, non-structural parts and the like of the blade, and can realize on-line monitoring of the health state of the blade in the production process, the transportation process and the operation process of the blade.

The invention relates to the technical field of building solid waste resource utilization, and discloses a bamboo-based biochar and cement-based waste-based artificial aggregate preparation method, which comprises: using cement-based waste powder as a main raw material, and using ordinary Portland cement and bamboo-based biochar as auxiliary materials, firstly carrying out alkali modification or ultrasonic modification treatment on the bamboo-based biochar, and then carrying out drying to obtain the artificial aggregate based on the bamboo-based biochar and the cement-based waste. The surface property is improved; then mixing the materials, and preparing a regular and uniform aggregate blank by adopting a disc granulation method and accurately controlling the inclination angle and the rotating speed in combination with a reserved dry powder rolling and sticking process; finally, the blank is cured, particularly carbonization curing is adopted, and carbon dioxide and cement hydration products react to generate calcium carbonate to fill internal pores. According to the invention, interface bonding is enhanced through the modified charcoal, the porosity is reduced through carbonization curing, the prepared artificial aggregate has the advantages of high compressive strength and low water absorption, and high-proportion utilization of cement-based wastes is realized.

The utility model discloses hybrid bonding equipment based on visual alignment, which belongs to the field of bonding processing equipment and comprises a bonding assembly, a first displacement mechanism, a second displacement mechanism, a first visual assembly, an optical calibration assembly, a second visual assembly and a bearing table. According to the technical scheme of the utility model, the position coordinates of the calibration point, the chip to be bonded and the mark point on the target chip can be accurately obtained through the corresponding arrangement of the optical calibration assembly, so that the compensation position information between the two chips can be accurately obtained, and the visual alignment of the two chips before hybrid bonding can be realized. The hybrid bonding equipment provided by the utility model is compact in structure, convenient to use, and capable of accurately completing bonding of a to-be-bonded chip and a target chip on a wafer and accurately realizing visual alignment between the to-be-bonded chip and the target chip before hybrid bonding, so that the alignment precision during hybrid bonding of the chips is effectively ensured, errors in the bonding process are reduced, and the production efficiency is improved. And the quality of a chip product is improved.

The invention provides a preparation method of an LED chip structure and the LED chip structure. The preparation method comprises the following steps: providing an LED epitaxial wafer; pixel isolation is carried out on the LED epitaxial layer; the top surface of the electrode leading-out structure is higher than the first semiconductor layer; the bottom surface is in contact with an electrode leading-out position of the pixel unit; bonding a first temporary substrate on the electrode lead-out structure; stripping the substrate; based on the LED chip unit area, the LED epitaxial layer and the first temporary substrate are cut into a plurality of separated LED chip units; providing a second temporary substrate, wherein the material of the second temporary substrate is the same as that of the driving substrate; the LED chip unit is bonded to the second temporary substrate; the first temporary substrate is removed. According to the technical scheme, Die to wafer is realized, wafer to wafer bonding is carried out, the two substrates are made of the same material, and offset caused by thermal expansion difference in the bonding process is avoided; and moreover, the waste of Die is reduced, and the performance is improved.

The invention belongs to the technical field of semiconductor material processing, and relates to a bonding method and a wafer room temperature bonding method, which are executed by a bonding system comprising a film forming chamber, a bonding chamber, a transmission chamber and a bonding point location preparation unit. The method comprises the following steps: forming an active film layer containing unsaturated bond active points on the surface of a wafer; active components are introduced through the bonding point site preparation unit, so that the active components react with the active point sites to form bonding point sites; transmitting the two wafers to a bonding chamber and aligning the two wafers; pressure is applied, and bonding is completed by means of the pressure and the bonding reaction between the bonding points. According to the method, the flat and active bonding surface can be prepared, the lattice structure is not influenced in the bonding process, and the quality of the bonding wafer product can be improved.

703 silica gel is one-component room temperature vulcanized silica gel with good adhesion, high strength and no corrosion, and is suitable for adhesion of precision optical lenses. The invention provides a cementing parameter optimization method of 703 silica gel for lens bonding, and aims to meet the cementing process requirements of optical lenses. The method comprises the following steps: measuring the cementing stress and the adhesive layer breaking stress value of 703 silica gel, and adopting a multivariate data fitting analysis method to respectively obtain quantitative rules between the cementing stress and the technological parameters and between the adhesive layer breaking stress value and the technological parameters. And optimizing the process parameters by taking the condition that the breaking stress value of the glue layer meets the strength requirement as a boundary condition and taking the minimum gluing stress as a target, so as to obtain a process parameter combination with the minimum gluing stress. Compared with the prior art, the method has the advantages that the quantitative relation between the cementing stress and the cementing process parameters and between the cementing damage stress value and the cementing process parameters is established, the application range of the method is widened, the process applicability of 703 silica gel in the aspect of optical device bonding is improved, and the cementing assembly precision and performance of optical precise instruments are improved.

The invention relates to the technical field of atomic gas chamber preparation, and discloses atomic gas chamber preparation equipment and method and an atomic gas chamber. The equipment comprises a vacuum box, a wafer bonding machine and an alkali metal injection device, the alkali metal injection device comprises a vacuum pump, an injection valve body, a heating piece, a vacuum firing pin and a vacuum probe row, the alkali metal injection and bonding process is carried out in a vacuum environment, and the situation that oxygen in the atmospheric environment oxidizes alkali metal and influences the quality of an atomic gas chamber can be effectively avoided; and meanwhile, external particulate matters are prevented from contaminating between the gas chamber component and the gas chamber sealing plate to influence the bonding effect and sealing performance, and the leakage rate of the atomic gas chamber can be effectively reduced, that is, the atomic gas chamber prepared by the atomic gas chamber preparation equipment is relatively high in yield and preparation efficiency.

The invention discloses a multi-layer cloth hot-pressing bonding process for a waterproof layer of a backpack, and relates to the technical field of hot-pressing equipment, the multi-layer cloth hot-pressing bonding process comprises a hot press main body, a rear table, a guide roller table, a gluing assembly and a hot-pressing assembly, and precise positioning and calibration of multiple waterproof material laminations are achieved through the guide roller table and a deviation rectifying assembly; the bag body is automatically extruded by utilizing material tension during layering, so that accurate control and uniform coating of the adhesive are realized; an electromagnetically-driven partition heating plate is adopted for local fine adjustment of pressure and temperature, and hot pressing uniformity and bonding strength of complex shapes are ensured; and finally, an ultrasonic detection system is integrated, coupling agent spraying is matched for online scanning of the hot-pressed waterproof material, defects such as bubbles, debonding and foreign matter are recognized, positioned and recorded in real time, and closed-loop quality control is formed.

The invention belongs to the technical field of microelectronic devices, and particularly relates to a high-performance surface acoustic wave device and a preparation process thereof. Comprising the following steps: preparing a polycrystalline diamond film layer on a low-resistance silicon substrate; preparing a temperature compensation layer on the polycrystalline diamond film layer; helium ions are injected into the bulk piezoelectric precursor to form a piezoelectric film layer to be transferred; the bulk piezoelectric precursor is bonded to the temperature compensation layer through a bonding technology, the piezoelectric film layer is reserved in a heat treatment mode, and a piezoelectric layer is obtained; preparing an interdigital electrode on the surface of the piezoelectric layer; and preparing a protection layer on the surface of the interdigital electrode and the non-designated area of the low-resistance silicon substrate, and etching the low-resistance silicon substrate on the designated area. According to the method, the polycrystalline diamond film layer is prepared on the low-resistance silicon substrate, the polycrystalline diamond film layer has high sound velocity and can restrain energy from leaking to the substrate, and the low-resistance silicon in the designated area is etched to reduce the radio frequency loss of the device, improve the quality factor of the surface acoustic wave device and improve the performance of the surface acoustic wave device.

The invention discloses a key glass laminating machine and a laminating method, the key glass laminating machine comprises an auxiliary laminating plate, the auxiliary laminating plate is provided with a laminating concave part, the auxiliary laminating plate is used for nesting and placing key glass, and the laminating concave part is used for nesting a bulge of a key; one of the upper glass laminating mechanism and the lower glass laminating mechanism is provided with an auxiliary laminating plate, and the other one is used for placing substrate glass and laminating and assembling the substrate glass and key glass. According to the key glass laminating machine disclosed by the invention, a laminating process technical method of non-planar glass and planar glass of keys is mainly realized, and the problem of laminating bubbles is effectively solved through special equipment laminating platform design and a special laminating process method, and particularly, the problem of bubbles in raised areas and edges of the keys is effectively solved; according to the key touch panel and the manufacturing method thereof, the appearance problem of a product after fitting and assembling is avoided, the quality of the produced key touch panel product meets the requirements of a user, and when the user clicks the key touch panel with a finger, a good physical key mechanical stroke experience feeling is achieved.