749 results about "Bonding process" patented technology

The invention discloses a helium detection device and method for the airtightness of a bonding interface and a bonding microcavity, and belongs to the field of the airtightness of MEMS devices. The device comprises a sample holder, a mass spectrometer, a molecular pump, a mechanical pump and other components, helium is used as detection gas, and the helium is leaked only through a bonding interface through a customized and processed test sample and sample holder structure, so that the interference of other leaks in a non-bonding area on a test result is avoided. The testing method comprises the steps of sample introduction, vacuum pumping, helium filling, signal detection, dynamic and steady state testing and the like, the helium leak rate is monitored in real time by combining with a helium mass spectrometer, and the minimum leak detection rate is that high-sensitivity air tightness detection is ensured. According to the method, the airtightness of the bonding interface can be independently evaluated, and a reliable basis is provided for development of a novel bonding process. The method is suitable for air tightness detection and evaluation of the bonding process in MEMS device processing and manufacturing.

The invention relates to the technical field of building solid waste resource utilization, and discloses a bamboo-based biochar and cement-based waste-based artificial aggregate preparation method, which comprises: using cement-based waste powder as a main raw material, and using ordinary Portland cement and bamboo-based biochar as auxiliary materials, firstly carrying out alkali modification or ultrasonic modification treatment on the bamboo-based biochar, and then carrying out drying to obtain the artificial aggregate based on the bamboo-based biochar and the cement-based waste. The surface property is improved; then mixing the materials, and preparing a regular and uniform aggregate blank by adopting a disc granulation method and accurately controlling the inclination angle and the rotating speed in combination with a reserved dry powder rolling and sticking process; finally, the blank is cured, particularly carbonization curing is adopted, and carbon dioxide and cement hydration products react to generate calcium carbonate to fill internal pores. According to the invention, interface bonding is enhanced through the modified charcoal, the porosity is reduced through carbonization curing, the prepared artificial aggregate has the advantages of high compressive strength and low water absorption, and high-proportion utilization of cement-based wastes is realized.

The utility model discloses hybrid bonding equipment based on visual alignment, which belongs to the field of bonding processing equipment and comprises a bonding assembly, a first displacement mechanism, a second displacement mechanism, a first visual assembly, an optical calibration assembly, a second visual assembly and a bearing table. According to the technical scheme of the utility model, the position coordinates of the calibration point, the chip to be bonded and the mark point on the target chip can be accurately obtained through the corresponding arrangement of the optical calibration assembly, so that the compensation position information between the two chips can be accurately obtained, and the visual alignment of the two chips before hybrid bonding can be realized. The hybrid bonding equipment provided by the utility model is compact in structure, convenient to use, and capable of accurately completing bonding of a to-be-bonded chip and a target chip on a wafer and accurately realizing visual alignment between the to-be-bonded chip and the target chip before hybrid bonding, so that the alignment precision during hybrid bonding of the chips is effectively ensured, errors in the bonding process are reduced, and the production efficiency is improved. And the quality of a chip product is improved.

The invention belongs to the technical field of semiconductor material processing, and relates to a bonding method and a wafer room temperature bonding method, which are executed by a bonding system comprising a film forming chamber, a bonding chamber, a transmission chamber and a bonding point location preparation unit. The method comprises the following steps: forming an active film layer containing unsaturated bond active points on the surface of a wafer; active components are introduced through the bonding point site preparation unit, so that the active components react with the active point sites to form bonding point sites; transmitting the two wafers to a bonding chamber and aligning the two wafers; pressure is applied, and bonding is completed by means of the pressure and the bonding reaction between the bonding points. According to the method, the flat and active bonding surface can be prepared, the lattice structure is not influenced in the bonding process, and the quality of the bonding wafer product can be improved.

The invention discloses a multi-layer cloth hot-pressing bonding process for a waterproof layer of a backpack, and relates to the technical field of hot-pressing equipment, the multi-layer cloth hot-pressing bonding process comprises a hot press main body, a rear table, a guide roller table, a gluing assembly and a hot-pressing assembly, and precise positioning and calibration of multiple waterproof material laminations are achieved through the guide roller table and a deviation rectifying assembly; the bag body is automatically extruded by utilizing material tension during layering, so that accurate control and uniform coating of the adhesive are realized; an electromagnetically-driven partition heating plate is adopted for local fine adjustment of pressure and temperature, and hot pressing uniformity and bonding strength of complex shapes are ensured; and finally, an ultrasonic detection system is integrated, coupling agent spraying is matched for online scanning of the hot-pressed waterproof material, defects such as bubbles, debonding and foreign matter are recognized, positioned and recorded in real time, and closed-loop quality control is formed.

The invention discloses a key glass laminating machine and a laminating method, the key glass laminating machine comprises an auxiliary laminating plate, the auxiliary laminating plate is provided with a laminating concave part, the auxiliary laminating plate is used for nesting and placing key glass, and the laminating concave part is used for nesting a bulge of a key; one of the upper glass laminating mechanism and the lower glass laminating mechanism is provided with an auxiliary laminating plate, and the other one is used for placing substrate glass and laminating and assembling the substrate glass and key glass. According to the key glass laminating machine disclosed by the invention, a laminating process technical method of non-planar glass and planar glass of keys is mainly realized, and the problem of laminating bubbles is effectively solved through special equipment laminating platform design and a special laminating process method, and particularly, the problem of bubbles in raised areas and edges of the keys is effectively solved; according to the key touch panel and the manufacturing method thereof, the appearance problem of a product after fitting and assembling is avoided, the quality of the produced key touch panel product meets the requirements of a user, and when the user clicks the key touch panel with a finger, a good physical key mechanical stroke experience feeling is achieved.

The invention relates to the technical field of semiconductor packaging, in particular to a multi-chip wafer packaging processing system which comprises a fixing frame, the fixing frame is provided with a first frame body and an installation support located on the periphery of the first frame body in the circumferential direction, and the first frame body is internally provided with a first discharging mechanism used for containing a first wafer. A mounting plate and a driving part for driving the mounting plate to lift are arranged on the mounting bracket, a second frame body is arranged on the mounting plate, a second emptying mechanism for placing a second wafer is arranged in the second frame body, and alignment marks are arranged on the first wafer and the second wafer; the fixing frame is provided with a reflection assembly used for reflecting the alignment marks on the first wafer and the second wafer to the same plane at the same time, and the fixing frame is further provided with a reading device. According to the invention, the alignment precision of the two wafers in the bonding process can be improved, so that the bonding precision between the two wafers can be improved, and the yield of the packaged wafers can be improved.

The utility model discloses an UTG composite polaroid, and belongs to the technical field of polaroids, the UTG composite polaroid is characterized by comprising a PET protective film layer, an UTG material layer, an adhesive layer, a polyvinyl alcohol film layer, a protective film layer, a pressure-sensitive adhesive layer and a release film layer which are sequentially stacked from top to bottom, and the thickness of the UTG material layer is 10-70 [mu] m. According to the display panel, one layer of OCA glue is reduced, the product thickness is reduced, the foldability is good, the cover plate glass and the polaroid can be directly combined in the processing procedure, the OCA glue material and the laminating procedure in the laminating process are omitted, the product cost is reduced, and the display panel has the advantages of high water vapor barrier rate, excellent RA reliability, excellent optical performance, high transmittance, good expansibility and the like. And the expansion effect of various special requirements is met.

The invention provides improved techniques for bonding devices using copper-to-copper or other types of bonds. A substrate is cleaned to remove surface oxides and contaminants and then rinsed. The rinsed substrate is provided to coating unit where a protective coating is applied to the substrate. The protective coating may be applied by immersing the substrate in a bath or via chemical vapor deposition. In an aspect, the protective coating may be copper selective so that the protective coating is only applied to copper features of the substrate. The protective coating minimizes formation of oxides and other bond weakening forces that may form during bonding processes, such as bonding a copper wire to a copper bond pad of the substrate. In an aspect, an annealing process is used to cure the protective coating and remove small imperfections and other abnormalities in the protective coating prior to the bonding process.

The utility model belongs to the technical field of structural health monitoring, and particularly relates to a clamp for a piezoelectric sensor bonding process. The clamp is characterized in that a force application rod mounting part is arranged on a fixed bracket; one end of the telescopic support frame is connected with the fixed bracket, and the other end of the telescopic support frame is connected with a structural member of a piezoelectric sensor to be bonded through a fixed sucker; the force application rod is mounted on the force application rod mounting part, a force application handle is mounted at one end of the force application rod, and a force sensor is mounted at the other end of the force application rod; the piezoelectric sensor bonding head is mounted on the force sensor, and a piezoelectric sensor is bonded in the piezoelectric sensor bonding head; the sensor output display device is used for displaying and recording measurement data of the force sensor. According to the invention, standardization and uniformity of the installation technology can be realized, difference caused by manual bonding is eliminated, and the bonding performance of the sensor is improved.

The invention relates to an adhesive technology based on a laminated spraying copper bar, and belongs to the technical field of copper bar production technologies, and the adhesive technology comprises the following steps: copper bar pretreatment: carrying out processing treatment on the copper bar according to the structural requirements of a design drawing; gluing and laminating are conducted, specifically, the surface of the spraying copper bar 1 and the surface of the insulating plate 2 are evenly smeared with adhesives, the adhesives are placed in an overlapped mode according to design requirements, and the adhesives make contact with one another and are tightly attached to one another; curing treatment is conducted, specifically, the stacked copper bars are put into a drying oven to be subjected to curing treatment; and in the performance test process, the sprayed copper bar is subjected to voltage withstanding alternating current for 10kv for 60s, so that no breakdown and no flashover are realized, and the partial discharge value is less than or equal to 10pC. The insulating plate needs to be selected with proper thickness and size according to electrical performance such as creepage distance and the like. The spraying thickness of the epoxy resin coated copper bar needs to be controlled according to insulation performance and the like. The finished adhesive copper bar has good electrical and insulating properties, and meets the requirements of the power industry for high-performance conductive parts.

The invention provides a wafer bonding device and a wafer bonding method, and belongs to the technical field of photoelectron manufacturing. The bonding device comprises two pressing plates and buffer pads, wherein the buffer pads are arranged on two opposite plate surfaces of the two pressing plates. The problem of non-uniform pressure in the bonding process can be improved, and the yield of the subsequent process is improved.

Embodiments of methods of die stacking are provided herein. In some embodiments, a method of die stacking using die-to-wafer bonding includes: bonding a plurality of first dies to a substrate by a hybrid bonding process; performing a selective silicon (Si) thinning process to reduce the thickness of the plurality of bonded first grains to form a plurality of thinned first grains; passivating the plurality of thinned first crystal grains to form a plurality of passivated thinned first crystal grains so as to protect the plurality of thinned first crystal grains; filling gaps between adjacent grains in the plurality of thinned first grains with a first filling material, wherein the plurality of passivated thinned first grains and the first filling material form a first layer; and forming a plurality of first conductive vias through the first layer to the substrate.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The utility model discloses amorphous strip composite forming equipment in the technical field of strip composite forming, which comprises a base, a plurality of groups of pressing assemblies arranged at equal intervals are arranged at the top of the base, a plurality of groups of control assemblies in one-to-one correspondence with the pressing assemblies are mounted at the bottom of the base, and the control assemblies are used for controlling the pressing assemblies to limit the top of an amorphous thin material. And guide assemblies which are in bilateral symmetry are arranged between the base and each set of downward pressing assemblies, the guide assemblies are used for limiting the two sides of the amorphous thin material, and each downward pressing assembly comprises two sets of guide pins which are installed in the base in an up-down sliding mode and are in bilateral symmetry. The problems that due to the fact that all layers of materials of the composite strip are thin, the difficulty of deviation rectification of the ductility direction and the like during thin material conveying is large, the direction of the thin materials is difficult to accurately control, the difficulty of gluing uniformity between the multiple layers of thin materials is high, and bubbles generated in the attaching process cannot be effectively discharged are solved.

The present disclosure provides a miniature electrostatic chuck (ESC) for die-to-wafer (D2W) bonding. The ESC can be manufactured using conventional semiconductor processes, incorporating through-silicon-via (TSV) and through-dielectric-via (TDV) structures. The ESC with different sizes can be attached to and detached from a multi-axis robotic arm, allowing optimized D2W bonding processes.

According to the two-dimensional semiconductor stacked device structure and the preparation method thereof provided by the invention, three-dimensional vertical stacking of a two-dimensional semiconductor device is realized through a bonding process of the first interlayer dielectric layer and the second interlayer dielectric layer; the common problems of organic residue introduction, material wrinkling and breakage and the like in a traditional two-dimensional semiconductor film transfer process are effectively solved, so that the integrity and long-term working stability of a stacked structure are remarkably enhanced. Meanwhile, a dielectric layer of a bonding interface is utilized to construct an efficient interlayer isolation barrier, efficient electrical isolation between two two-dimensional semiconductor layers is achieved, the crosstalk problem of threshold voltages in an existing stacking framework is solved, independent and accurate adjustment of the threshold voltages of upper and lower layer transistors is achieved, and higher flexibility is provided for device performance optimization.

The invention relates to an ultrasonic bonding process and a bonding process reliability evaluation method, and belongs to the technical field of semiconductor device packaging. The invention relates to an ultrasonic bonding process, which comprises the following steps of: 1, before bonding, carrying out plasma cleaning on a metal ceramic shell to remove surface contamination and an oxide layer; step 2, enabling the aluminum wire to penetrate into a chopper of a bonding machine, enabling the aluminum wire to be in contact with the surface of the gold-plated layer at the bonding pressure of 250cN-280cN by adopting the chopper, and enabling the aluminum wire to be in contact with the surface gold-plated layer of the bonding area in a low-pressure mode; and step 3, the bonding machine applies ultrasonic power of 10.5-12.3 W for 400-500 ms, the aluminum wire begins to rub and destroy the gold-plated layer on the surface of the bonding area under the action of the ultrasonic power, and after the gold-plated layer is destroyed, the aluminum wire penetrates through the gold-plated layer and forms an atomic-scale mutual diffusion interface with the nickel-plated layer. Reliable combination of gold, aluminum and nickel is achieved, meanwhile, a reliability evaluation method is provided, and therefore it is guaranteed that devices, circuits and the like adopting the ultrasonic bonding technology work reliably in the life cycle.

The invention belongs to the technical field of semiconductor wafer process treatment, and particularly relates to a wafer bonding safety floating force application device and a use method thereof. A power source is fixed to a frame, a lead screw is connected with the output end of the power source, the lead screw is in threaded connection with a nut, the nut is fixedly connected with a sliding table plate, and an air cylinder is installed on the bottom face of the sliding table plate; the pressing disc body is connected with a cylinder rod of the air cylinder, and the supporting disc body is fixed to the bottom of the frame and located below the pressing disc body. A pipeline connector of the air cylinder is connected with the electric proportional valve, the electric proportional valve outputs fixed gas pressure needed by bonding to the air cylinder, and the pressing disc body is in pressing fit with the supporting disc body when the air cylinder is in a floating force application state. By adopting a mode of combining a rapid positioning structure and a floating force application structure, floating press fit of the bonding disc in the vacuum cavity is realized, the press fit adaptivity is improved, the control difficulty is reduced, the press fit force control precision is improved, the production safety is enhanced, and the production yield of the bonding process is further improved.

The invention relates to a chip die bonding device and a chip die bonding system. The chip die bonding device comprises a bearing platform; the ejector pin cap assembly is arranged on one side, in the first direction, of the bearing table and comprises an ejector pin cap and an ejector pin, the ejector pin cap is provided with a cavity, and an opening communicated with the cavity is formed in the end face, facing the bearing table, of the ejector pin cap; a light-transmitting part is arranged on the side wall of one end, close to the bearing table, of the thimble cap; the light source assembly is configured to emit light rays to the ejector pin cap, and the light rays penetrate through the light transmitting part and irradiate the opening; the light and the first direction form an included angle; the visual assembly and the ejector pin cap assembly are arranged on the same side of the bearing table, and the visual assembly is configured to collect image information reflected from the opening. Through the position design of the light source assembly and the visual assembly, the real-time relative position of the ejector pin and the current to-be-fixed chip can be directly obtained before the die bonding action, the center of the chip can be adjusted to be aligned with the ejector pin and a bonding pad on a transfer substrate, and thus the die bonding positioning precision is improved.

The invention discloses a method and a system for managing and controlling chip-level operation of an advanced packaging and bonding process, and belongs to the technical field of semiconductor advanced packaging and manufacturing, and the method comprises the following steps: endowing a wafer and a glass substrate with unique electronic identifiers; binding the material information and the process parameters to form station entering management and control; single wafer exclusive process parameters are issued to the bonding machine; the method comprises the following steps: collecting bonding process data, performing hierarchical processing based on a three-level abnormal response mechanism, and performing real-time data closed-loop management and control on a bonding process: performing three-dimensional verification on a physical state, a system state and data integrity of a bonded wafer to realize outbound total element verification; and generating a core data traceability packet after the verification is qualified, and storing key nodes through a block chain platform to realize tampering-free evidence storage. According to the method, the problems of insufficient tracing precision and exception handling lagging of traditional batch control can be solved, the quality stability and production efficiency of the bonding process are improved to a certain extent, and the method has better engineering applicability.

Described herein are isolator devices designed to reduce cracking and mechanical stress despite the use of wire bonds made of hard materials (e.g., copper-based). The isolators employ thin film dielectric materials with high dielectric strength and permittivity underneath the top coil (electrode) to enhance the isolation of the device. However, these materials are susceptible to cracking. Described herein are designs in which the dielectric material is partially removed from the isolator. A dielectric layer may be kept in the region(s) where its large dielectric permittivity is particularly beneficial (e.g., near the edge of a coil) but may be removed from the region immediately underneath the bonding pad, where a large amount of pressure is applied during the bonding process. Optionally, a cushion layer is employed to absorb some of the energy produced during the bonding process.

The invention relates to the technical field of bonding equipment displacement compensation, in particular to a high-speed lead bonding equipment motion platform displacement error dynamic compensation method and device, and the method comprises the steps: carrying out the real-time collection of state parameters of a motion platform, and obtaining multi-dimensional real-time monitoring data; based on the multi-dimensional real-time monitoring data, independently estimating real-time characteristic parameters of the platform through a plurality of preset identification algorithms executed in parallel; inputting the real-time characteristic parameters of the platform into a preset multi-error-source coupling prediction algorithm, and calculating to obtain a predicted displacement deviation of the motion platform in a future preset time window; determining a corresponding position precision tolerance interval according to the requirement of the current bonding process step on the positioning precision; establishing a multi-objective optimization problem; and performing rolling time domain solution on the multi-objective optimization problem, generating a collaborative compensation instruction in real time, and executing the collaborative compensation instruction. According to the invention, accurate prediction and collaborative dynamic compensation can be carried out on various time-varying coupling errors under the condition of high-speed motion.

The invention provides a one-step method small-diameter fitting forming drum for a farm tire and a fitting process of the one-step method small-diameter fitting forming drum. The one-time method small-diameter fitting forming drum for the agricultural tire comprises a main shaft assembly, the middle drum assembly is arranged on the outer side of the main shaft assembly in a sleeving mode and is driven by the main shaft assembly to rotate, and the outer surface of the middle drum assembly can expand and contract; the side drum assembly is arranged on the outer side of the main shaft assembly in a sleeving mode and driven by the main shaft assembly to rotate, the side drum assembly is located on the axial side face of the middle drum assembly, the outer surface of the side drum assembly can axially move and be arranged in an expanding and shrinking mode, and when the side drum assembly axially moves, an avoiding area can be formed by the side drum assembly and the middle drum assembly; when the middle drum assembly and / or the side drum assembly expand / shrink, the flush relation between the outer surface of the middle drum assembly and the outer surface of the side drum assembly can be changed; and the locking ring assembly is located between the middle drum assembly and the side drum assembly, and the locking ring assembly is arranged in an expanding and shrinking mode. The problem that in the prior art, an agricultural radial tire forming machine is low in automation level is solved.

A method for manufacturing a reactor includes a bonding process of joining molded cores with a molded coil with an adhesive, and a welding process of connecting, by welding, the lead wire of a coil to a busbar fixed to the molded core. The coils are attached to respective leg portions. The bonding process includes an applying process of applying the adhesive to the joining surfaces of the respective leg portions of each of the core members, and the inner circumferential surfaces of the respective yoke portions of the core members, a depressing process of spreading the applied adhesive by depression, and a curing process of curing the adhesive.

The invention belongs to the technical field of composite material forming, and particularly relates to a verification method for composite material plate-plate structure glue joint and a glue joint method. The invention provides an application of a pressure-sensitive color-changing film in cementing verification of a composite material plate-plate structure. According to the method, the pressure-sensitive color-changing film and the gluing adhesive film used in the gluing process are simultaneously arranged on the to-be-glued surfaces of the plate-plate structures of the two composite material assemblies through the isolating film, and then the to-be-glued surfaces of the two composite material assemblies apply pressure to the pressure-sensitive color-changing film through pressurization verification or vacuumizing verification, so that the color of the pressure-sensitive color-changing film is changed, and the gluing effect of the two composite material assemblies is improved. By observing the color change condition of the pressure-sensitive color-changing film, the weak pressure area during panel-panel structure cementing is displayed, so that the large-gap area is judged according to the color change condition of the pressure-sensitive color-changing film, the cementing adhesive film is added for compensation, visualization of composite material panel-panel structure cementing verification can be realized, and the operation is simple, accurate and reliable.

The utility model discloses a UPVC pipe bonding auxiliary device relates to pipeline installation field, including slide rail, pipeline support block and two bonding direction adjusting block, be equipped with three slider on the slide rail, slider can freely slide along the slide rail, pipeline support block corresponds with the middle slider, its top is equipped with the semicircle concave cavity that is used for supporting UPVC pipeline, and the two bonding direction adjusting block is equipped with the semicircle concave cavity that is used for supporting the UPVC pipeline. Through the design of the pipe fitting concave cavity formed by combining the cross-shaped concave cavity and the round concave cavity at the bottom, the bonding direction adjusting block can position and support the UPVC pipe fittings, the angle between the two UPVC pipe fittings in the bonding process is ensured to meet the requirements (such as 0 degree, 90 degrees and 180 degrees), the problem of deviation caused by manual naked eye judgment is thoroughly solved, the production efficiency is improved, and the production cost is reduced. And it is ensured that the bonded pipeline is installed in place at a time, reworking is avoided, waste of materials is reduced, and working efficiency is improved.

The embodiment of the invention discloses a semiconductor device, a semiconductor wafer, a preparation method and a storage system, the semiconductor wafer comprises a first semiconductor base material, a second semiconductor base material and a high-K dielectric layer, and the second semiconductor base material and the first semiconductor base material are oppositely arranged; the high-K dielectric layer is disposed between the first semiconductor substrate and the second semiconductor substrate. According to the semiconductor wafer provided by the embodiment of the invention, the first semiconductor substrate and the second semiconductor substrate are used as the intermediate bonding layer through the high-K dielectric layer, and the high-K dielectric layer has a higher physical thickness than a buried oxide layer under the condition of the same equivalent oxygen thickness, so that the bonding process is easier to control, and therefore, the reliability of the semiconductor wafer is improved. After the feature size of the semiconductor wafer is miniaturized, the requirement for improving the performance of the device can be met, and meanwhile the requirement for the bonding technology can also be met.

The utility model relates to a semiconductor device. The vertically stacked semiconductor device comprises a first device structure which is bonded to a second device structure through a bonding layer with a compressible metal bonding structure. The compressible metal bond structure is fabricated using a chemical deposition process and has a lower density and a greater degree of compressibility than the equivalent material deposited by the related process. Thus, the mating metal bonding structure has a degree of compliance, enabling effective metal-to-metal contact during a subsequent bonding process. Recrystallization of the metal material during the annealing process results in shrinkage of the metal material and forms void regions between the metal bond and the surrounding dielectric layer, thereby reducing stresses on the surrounding dielectric and dielectric interface. Therefore, bonding defects can be minimized and the efficiency and yield of vertically stacked semiconductor devices can be improved.

This invention relates to the field of semiconductor packaging technology, and in particular to a multi-chip wafer packaging system, comprising a mounting frame, a first frame and a mounting bracket located circumferentially around the first frame, a first feeding mechanism for placing a first wafer within the first frame, a mounting plate and a drive component for lifting the mounting plate on the mounting bracket, a second frame within the mounting plate, and a second feeding mechanism for placing a second wafer within the second frame, both the first and second wafers having alignment marks, and a reflective component on the mounting frame for simultaneously reflecting the alignment marks on the first and second wafers to the same plane, and a reading device on the mounting frame. This application helps improve the alignment accuracy of the two wafers during the bonding process, thereby improving the bonding accuracy between the two wafers, and further helping to improve the yield after wafer packaging.