1144 results about "Bonding process" patented technology

The invention discloses a bonding silver wire quality detection method and system, and relates to the technical field of bonding quality detection.The bonding silver wire quality detection method comprises the steps that a thermal infrared imager is adopted to scan a bonding area, and temperature field distribution data in the bonding process is obtained; scanning the bonding area by adopting a magnetic conductivity measuring probe to obtain magnetic conductivity distribution data of the bonding area; performing 10 * 10 grid division on the bonding area, and performing feature extraction on the temperature field distribution data and the magnetic conductivity distribution data based on divided grids to obtain thermal feature parameters and magnetic feature parameters; and calculating a bonding silver wire quality score according to the thermal characteristic parameters and the magnetic characteristic parameters, and judging the bonding quality of the silver wire according to a score result to obtain a bonding quality evaluation result. According to the method, the limitation of traditional single parameter detection is broken through, the accuracy and reliability of bonding quality evaluation are remarkably improved, and a systematic technical support is provided for improvement of the bonding process level.

The invention discloses a copper wire bonding process for a silicon carbide power device chip after copperization, and relates to the technical field of chip manufacturing, and the copper wire bonding process comprises the following specific steps: step 1, chip pretreatment: preparing the silicon carbide power device chip, placing the chip in a cleaning tank, and cleaning the silicon carbide power device chip; the method has the advantages that the nickel layer, the metal palladium layer and the metal copper layer with the specific thickness and sequence are evaporated on the surface of the chip, the buffer layer with the gradient structure is prepared, the plating uniformity and the appropriate thickness are ensured through the accurately-controlled electrode layer evaporation process, the problems of wafer warping, buffer failure and the like are solved, and the production efficiency is improved. A stable electrical connection basis is provided for the chip, the elasticity modulus of the gradient structure of the buffer layer can be gradually reduced from contact with the electrode layer to contact with the copper wire according to the stress distribution characteristics, the stress dispersion effect is greatly improved, the reliability of the chip in the bonding and subsequent use processes is remarkably improved, the service life of the chip is prolonged, and the production cost is reduced. And the risk of product failure caused by chip damage is reduced.

The invention provides a semiconductor device and a manufacturing method thereof. The manufacturing method comprises the following steps: providing two wafers to be mixed and bonded; forming a bonding layer; etching the metal layer of the first wafer to enable the surface of the metal layer to be lower than the surface of the dielectric layer; forming a nano bridge metal layer on the surface of the metal layer of the first wafer; forming a nano bridge dielectric layer; bonding the first wafer and the second wafer; leading out a metal connecting piece; and applying voltage by using the metal connecting pieces so as to conduct the nano-bridge dielectric layer between the metal layers. According to the invention, the nanometer bridge structure is formed in the metal bonding area of the first wafer and the second wafer, so that metal bonding is realized by using the nanometer bridge structure under a power-on condition, metal layers do not need to be bonded by using annealing thermal expansion, and the height of the metal layers relative to a dielectric layer and the surface pattern of the metal layers do not need to be strictly controlled; and high-temperature annealing is not needed, so that the process difficulty is reduced, the performance of the device is ensured, and the problems of high difficulty and influence on the performance of the device in the existing mixed bonding process method are solved.

The invention relates to a preparation method and system of a high-performance electronic tag in the field of electronic tag manufacturing, and the method comprises the steps: obtaining the working parameters of a high-frequency / NFC electronic tag in a high-temperature environment, analyzing the conductivity change trend of an antenna material, building a mathematical model of the influence of the high-temperature environment on the antenna material, and obtaining the high-performance electronic tag according to the model. Adjusting the component proportion of the antenna material to obtain an optimized antenna material formula; on the basis of optimizing an electromagnetic shielding scheme, comprehensive performance data of a high-frequency / NFC electronic tag in different environments are collected, a performance prediction model under the coupling action of multiple environmental factors is established, the model is adopted to simulate the working state of the tag in a complex working condition, and the performance stability of the tag is judged; after an antenna pattern is precisely processed, characteristic data of all layers of materials of the high-frequency / NFC electronic tag are collected, a relation model of material characteristics and bonding strength is established, and interlayer bonding force is enhanced by adopting a plasma surface treatment technology, so that an optimized bonding process scheme is obtained.

The invention belongs to the field of hybrid bonding, and particularly discloses a bonding head for hybrid bonding and a bonding method.The bonding head comprises a bonding head body, the lower surface of the bonding head body is of a horizontal structure, and an annular air pressure groove with a downward opening is formed in the lower surface of the bonding head body along the edge; the positive-negative air pressure device is used for adjusting the air pressure in the annular air pressure groove; and the moving rod assembly comprises a main moving rod and a plurality of auxiliary moving rods, the main moving rod and the auxiliary moving rods penetrate through the bonding head body, and the auxiliary moving rods are arranged around the peripheral side of the main moving rod. According to the bonding head, the annular air pressure groove is formed in the bonding head body, the adsorption force on the to-be-bonded chip is increased, in the bonding process, the main moving rod and the auxiliary moving rod can push the to-be-bonded chip to enable the to-be-bonded chip to have enough deformation quantity, the chip cannot be separated from the bonding head body, the bonding effect of hybrid bonding is improved, and the bonding efficiency is improved. And voids on the bonding interface are avoided.

The invention provides a fitting method for a vehicle-mounted curved surface display module, and the method comprises the steps: obtaining temperature data collected by a sensor, and generating an environment temperature sequence containing a timestamp and a temperature value; determining a fitting strength predicted value according to the environment temperature sequence; if the fitting strength predicted value exceeds a preset strength threshold value, determining a fitting parameter adjustment coefficient according to historical data; obtaining a fitting process parameter combination corresponding to the adjustment coefficient from a preset database, and generating an optimized fitting parameter set; inputting the optimized fitting parameter set into a control system, adjusting fitting equipment parameters, and monitoring to generate a fitting strength real-time sequence; and if the fluctuation amplitude of the fitting strength real-time sequence is smaller than a preset fluctuation threshold value, storing the fitting parameter set and the environment temperature sequence to a database.

The invention discloses a helium detection device and method for the airtightness of a bonding interface and a bonding microcavity, and belongs to the field of the airtightness of MEMS devices. The device comprises a sample holder, a mass spectrometer, a molecular pump, a mechanical pump and other components, helium is used as detection gas, and the helium is leaked only through a bonding interface through a customized and processed test sample and sample holder structure, so that the interference of other leaks in a non-bonding area on a test result is avoided. The testing method comprises the steps of sample introduction, vacuum pumping, helium filling, signal detection, dynamic and steady state testing and the like, the helium leak rate is monitored in real time by combining with a helium mass spectrometer, and the minimum leak detection rate is that high-sensitivity air tightness detection is ensured. According to the method, the airtightness of the bonding interface can be independently evaluated, and a reliable basis is provided for development of a novel bonding process. The method is suitable for air tightness detection and evaluation of the bonding process in MEMS device processing and manufacturing.

A disposable facemask is provided having a filter body with an opening sized to cover the nose and mouth of a wearer. The filter body further includes an outer mask layer and an inner mask layer, and one or more intermediate layers disposed between the outer and inner mask layers. At least one of the intermediate layers is a nonwoven web layer including thermoplastic filaments formed from a random copolymer, or a random copolymer blended with a homopolymer.

The invention discloses an alloy bonding process parameter optimization method and system, and relates to the technical field of data processing, and the method comprises the steps: presetting a target microstructure state, and constructing an evaluation index system; actual microstructure data of a bonding interface in the alloy bonding process are obtained, and key evolution characteristics are marked to determine the thickness of a diffusion layer and grain size distribution; by comparing the actual microstructure data with the target microstructure state, a relation model of process parameters and microstructures is established, and first prediction is completed; analyzing the dynamic characteristics of the diffusion layer through the result of the first prediction, and completing second prediction in combination with a thermodynamic-diffusion threshold value; and deducing an optimal process parameter combination through a second prediction result to realize a target microstructure state. According to the method, the problems of target fuzziness, insufficient model precision and the like are effectively solved, the bonding quality and stability are remarkably improved, the rejection rate and the cost are reduced, and an innovative solution is provided for high-performance material processing.

The invention relates to a preparation method of a single-crystal piezoelectric film bulk acoustic resonator, and relates to the field of semiconductor device production processes, and the preparation method comprises the following steps: S1, preparing a single-crystal piezoelectric film and an electrode layer on a first substrate; s2, patterning the single crystal piezoelectric film and the electrode layer; s3, temporarily bonding the supporting slide glass with the first substrate through the adhesion layer; s4, removing the first substrate; s5, etching a photoetching through hole in the thin film body; s6, depositing metal to form a connecting part and a lower electrode; s7, processing a cavity structure on the second substrate; s8, preparing a transition layer on the surface of the second substrate; s9, removing the first part; s10, preparing a bonding layer on the second substrate; s11, processing a communication hole in the bonding layer and removing the second part; s12, bonding the lower electrode and the second substrate; and S13, removing the supporting slide glass and the adhesion layer. The method has the advantages that the bonding material uniformly covers the surface of the second substrate and the cavity structure, weak points are prevented from being formed at the cavity structure, and the reliability and stability of the bonding process are remarkably improved.

The invention relates to the technical field of building solid waste resource utilization, and discloses a bamboo-based biochar and cement-based waste-based artificial aggregate preparation method, which comprises: using cement-based waste powder as a main raw material, and using ordinary Portland cement and bamboo-based biochar as auxiliary materials, firstly carrying out alkali modification or ultrasonic modification treatment on the bamboo-based biochar, and then carrying out drying to obtain the artificial aggregate based on the bamboo-based biochar and the cement-based waste. The surface property is improved; then mixing the materials, and preparing a regular and uniform aggregate blank by adopting a disc granulation method and accurately controlling the inclination angle and the rotating speed in combination with a reserved dry powder rolling and sticking process; finally, the blank is cured, particularly carbonization curing is adopted, and carbon dioxide and cement hydration products react to generate calcium carbonate to fill internal pores. According to the invention, interface bonding is enhanced through the modified charcoal, the porosity is reduced through carbonization curing, the prepared artificial aggregate has the advantages of high compressive strength and low water absorption, and high-proportion utilization of cement-based wastes is realized.

The utility model discloses hybrid bonding equipment based on visual alignment, which belongs to the field of bonding processing equipment and comprises a bonding assembly, a first displacement mechanism, a second displacement mechanism, a first visual assembly, an optical calibration assembly, a second visual assembly and a bearing table. According to the technical scheme of the utility model, the position coordinates of the calibration point, the chip to be bonded and the mark point on the target chip can be accurately obtained through the corresponding arrangement of the optical calibration assembly, so that the compensation position information between the two chips can be accurately obtained, and the visual alignment of the two chips before hybrid bonding can be realized. The hybrid bonding equipment provided by the utility model is compact in structure, convenient to use, and capable of accurately completing bonding of a to-be-bonded chip and a target chip on a wafer and accurately realizing visual alignment between the to-be-bonded chip and the target chip before hybrid bonding, so that the alignment precision during hybrid bonding of the chips is effectively ensured, errors in the bonding process are reduced, and the production efficiency is improved. And the quality of a chip product is improved.

The invention provides a preparation method of an LED chip structure and the LED chip structure. The preparation method comprises the following steps: providing an LED epitaxial wafer; pixel isolation is carried out on the LED epitaxial layer; the top surface of the electrode leading-out structure is higher than the first semiconductor layer; the bottom surface is in contact with an electrode leading-out position of the pixel unit; bonding a first temporary substrate on the electrode lead-out structure; stripping the substrate; based on the LED chip unit area, the LED epitaxial layer and the first temporary substrate are cut into a plurality of separated LED chip units; providing a second temporary substrate, wherein the material of the second temporary substrate is the same as that of the driving substrate; the LED chip unit is bonded to the second temporary substrate; the first temporary substrate is removed. According to the technical scheme, Die to wafer is realized, wafer to wafer bonding is carried out, the two substrates are made of the same material, and offset caused by thermal expansion difference in the bonding process is avoided; and moreover, the waste of Die is reduced, and the performance is improved.

The invention belongs to the technical field of semiconductor material processing, and relates to a bonding method and a wafer room temperature bonding method, which are executed by a bonding system comprising a film forming chamber, a bonding chamber, a transmission chamber and a bonding point location preparation unit. The method comprises the following steps: forming an active film layer containing unsaturated bond active points on the surface of a wafer; active components are introduced through the bonding point site preparation unit, so that the active components react with the active point sites to form bonding point sites; transmitting the two wafers to a bonding chamber and aligning the two wafers; pressure is applied, and bonding is completed by means of the pressure and the bonding reaction between the bonding points. According to the method, the flat and active bonding surface can be prepared, the lattice structure is not influenced in the bonding process, and the quality of the bonding wafer product can be improved.

The invention relates to the technical field of atomic gas chamber preparation, and discloses atomic gas chamber preparation equipment and method and an atomic gas chamber. The equipment comprises a vacuum box, a wafer bonding machine and an alkali metal injection device, the alkali metal injection device comprises a vacuum pump, an injection valve body, a heating piece, a vacuum firing pin and a vacuum probe row, the alkali metal injection and bonding process is carried out in a vacuum environment, and the situation that oxygen in the atmospheric environment oxidizes alkali metal and influences the quality of an atomic gas chamber can be effectively avoided; and meanwhile, external particulate matters are prevented from contaminating between the gas chamber component and the gas chamber sealing plate to influence the bonding effect and sealing performance, and the leakage rate of the atomic gas chamber can be effectively reduced, that is, the atomic gas chamber prepared by the atomic gas chamber preparation equipment is relatively high in yield and preparation efficiency.

The invention discloses a multi-layer cloth hot-pressing bonding process for a waterproof layer of a backpack, and relates to the technical field of hot-pressing equipment, the multi-layer cloth hot-pressing bonding process comprises a hot press main body, a rear table, a guide roller table, a gluing assembly and a hot-pressing assembly, and precise positioning and calibration of multiple waterproof material laminations are achieved through the guide roller table and a deviation rectifying assembly; the bag body is automatically extruded by utilizing material tension during layering, so that accurate control and uniform coating of the adhesive are realized; an electromagnetically-driven partition heating plate is adopted for local fine adjustment of pressure and temperature, and hot pressing uniformity and bonding strength of complex shapes are ensured; and finally, an ultrasonic detection system is integrated, coupling agent spraying is matched for online scanning of the hot-pressed waterproof material, defects such as bubbles, debonding and foreign matter are recognized, positioned and recorded in real time, and closed-loop quality control is formed.

The invention belongs to the technical field of microelectronic devices, and particularly relates to a high-performance surface acoustic wave device and a preparation process thereof. Comprising the following steps: preparing a polycrystalline diamond film layer on a low-resistance silicon substrate; preparing a temperature compensation layer on the polycrystalline diamond film layer; helium ions are injected into the bulk piezoelectric precursor to form a piezoelectric film layer to be transferred; the bulk piezoelectric precursor is bonded to the temperature compensation layer through a bonding technology, the piezoelectric film layer is reserved in a heat treatment mode, and a piezoelectric layer is obtained; preparing an interdigital electrode on the surface of the piezoelectric layer; and preparing a protection layer on the surface of the interdigital electrode and the non-designated area of the low-resistance silicon substrate, and etching the low-resistance silicon substrate on the designated area. According to the method, the polycrystalline diamond film layer is prepared on the low-resistance silicon substrate, the polycrystalline diamond film layer has high sound velocity and can restrain energy from leaking to the substrate, and the low-resistance silicon in the designated area is etched to reduce the radio frequency loss of the device, improve the quality factor of the surface acoustic wave device and improve the performance of the surface acoustic wave device.

The invention discloses a key glass laminating machine and a laminating method, the key glass laminating machine comprises an auxiliary laminating plate, the auxiliary laminating plate is provided with a laminating concave part, the auxiliary laminating plate is used for nesting and placing key glass, and the laminating concave part is used for nesting a bulge of a key; one of the upper glass laminating mechanism and the lower glass laminating mechanism is provided with an auxiliary laminating plate, and the other one is used for placing substrate glass and laminating and assembling the substrate glass and key glass. According to the key glass laminating machine disclosed by the invention, a laminating process technical method of non-planar glass and planar glass of keys is mainly realized, and the problem of laminating bubbles is effectively solved through special equipment laminating platform design and a special laminating process method, and particularly, the problem of bubbles in raised areas and edges of the keys is effectively solved; according to the key touch panel and the manufacturing method thereof, the appearance problem of a product after fitting and assembling is avoided, the quality of the produced key touch panel product meets the requirements of a user, and when the user clicks the key touch panel with a finger, a good physical key mechanical stroke experience feeling is achieved.

The invention relates to the technical field of chip bonding, and particularly discloses chip-to-wafer bonding equipment, which comprises a marble gantry platform, and further comprises a chip feeding motion table mechanism, a wafer feeding motion table mechanism, a wafer feeding motion table mechanism, a wafer feeding motion table mechanism, a wafer feeding motion table mechanism, a wafer feeding motion table mechanism, a wafer feeding motion table mechanism, a wafer feeding motion table mechanism and a wafer feeding motion table mechanism, the feeding positioning detection mechanism is used for judging the size and the number of the chips fed on the charging tray, and the feeding positioning detection mechanism is installed above the marble gantry platform and located above the chip feeding movement table mechanism; the chip inversion mechanism is used for protecting the salient points from being damaged when the chips are fed; according to the invention, the existing chip-to-wafer bonding equipment realizes a mixed bonding process combining two bonding processes, that is, the equipment can directly align and bond the Cu-Cu salient points in a real-time heating and pressurizing manner without using a soldering flux, and also can directly align and bond the Cu-Cu salient points, so that the use effect of the bonding equipment is improved.

The invention relates to the technical field of semiconductor packaging, in particular to a multi-chip wafer packaging processing system which comprises a fixing frame, the fixing frame is provided with a first frame body and an installation support located on the periphery of the first frame body in the circumferential direction, and the first frame body is internally provided with a first discharging mechanism used for containing a first wafer. A mounting plate and a driving part for driving the mounting plate to lift are arranged on the mounting bracket, a second frame body is arranged on the mounting plate, a second emptying mechanism for placing a second wafer is arranged in the second frame body, and alignment marks are arranged on the first wafer and the second wafer; the fixing frame is provided with a reflection assembly used for reflecting the alignment marks on the first wafer and the second wafer to the same plane at the same time, and the fixing frame is further provided with a reading device. According to the invention, the alignment precision of the two wafers in the bonding process can be improved, so that the bonding precision between the two wafers can be improved, and the yield of the packaged wafers can be improved.

The utility model discloses an UTG composite polaroid, and belongs to the technical field of polaroids, the UTG composite polaroid is characterized by comprising a PET protective film layer, an UTG material layer, an adhesive layer, a polyvinyl alcohol film layer, a protective film layer, a pressure-sensitive adhesive layer and a release film layer which are sequentially stacked from top to bottom, and the thickness of the UTG material layer is 10-70 [mu] m. According to the display panel, one layer of OCA glue is reduced, the product thickness is reduced, the foldability is good, the cover plate glass and the polaroid can be directly combined in the processing procedure, the OCA glue material and the laminating procedure in the laminating process are omitted, the product cost is reduced, and the display panel has the advantages of high water vapor barrier rate, excellent RA reliability, excellent optical performance, high transmittance, good expansibility and the like. And the expansion effect of various special requirements is met.

The invention provides improved techniques for bonding devices using copper-to-copper or other types of bonds. A substrate is cleaned to remove surface oxides and contaminants and then rinsed. The rinsed substrate is provided to coating unit where a protective coating is applied to the substrate. The protective coating may be applied by immersing the substrate in a bath or via chemical vapor deposition. In an aspect, the protective coating may be copper selective so that the protective coating is only applied to copper features of the substrate. The protective coating minimizes formation of oxides and other bond weakening forces that may form during bonding processes, such as bonding a copper wire to a copper bond pad of the substrate. In an aspect, an annealing process is used to cure the protective coating and remove small imperfections and other abnormalities in the protective coating prior to the bonding process.

The invention provides a plate-adhesive-free crystal bonding method for silicon wafer cutting and application, and relates to the technical field of solar cells. Specifically, the method comprises the following steps: preparing a steel crystal support and a plastic plate; wherein a plurality of groove structures are arranged on the single-side surface of the steel crystal support, and a plurality of tooth structures matched with the groove structures are arranged on the single-side surface of the plastic plate; the steel crystal support and the plastic plate are assembled, so that the groove structure and the tooth structure are connected in an embedded mode; and ultrasonic welding is conducted at the embedded position, the groove structure is completely filled with the molten tooth structure, and the steel crystal support-plastic plate composite part without plate glue is obtained. The invention provides a novel process method which does not contain an adhesive component aiming at a crystal bonding process before cutting a silicon wafer in a solar cell, can effectively solve the problems of adhesive during bonding, adhesive residue after cutting, environmental pollution, harm to human bodies and the like caused by a traditional adhesive, and has a good application prospect.

The utility model belongs to the technical field of structural health monitoring, and particularly relates to a clamp for a piezoelectric sensor bonding process. The clamp is characterized in that a force application rod mounting part is arranged on a fixed bracket; one end of the telescopic support frame is connected with the fixed bracket, and the other end of the telescopic support frame is connected with a structural member of a piezoelectric sensor to be bonded through a fixed sucker; the force application rod is mounted on the force application rod mounting part, a force application handle is mounted at one end of the force application rod, and a force sensor is mounted at the other end of the force application rod; the piezoelectric sensor bonding head is mounted on the force sensor, and a piezoelectric sensor is bonded in the piezoelectric sensor bonding head; the sensor output display device is used for displaying and recording measurement data of the force sensor. According to the invention, standardization and uniformity of the installation technology can be realized, difference caused by manual bonding is eliminated, and the bonding performance of the sensor is improved.

The invention relates to an adhesive technology based on a laminated spraying copper bar, and belongs to the technical field of copper bar production technologies, and the adhesive technology comprises the following steps: copper bar pretreatment: carrying out processing treatment on the copper bar according to the structural requirements of a design drawing; gluing and laminating are conducted, specifically, the surface of the spraying copper bar 1 and the surface of the insulating plate 2 are evenly smeared with adhesives, the adhesives are placed in an overlapped mode according to design requirements, and the adhesives make contact with one another and are tightly attached to one another; curing treatment is conducted, specifically, the stacked copper bars are put into a drying oven to be subjected to curing treatment; and in the performance test process, the sprayed copper bar is subjected to voltage withstanding alternating current for 10kv for 60s, so that no breakdown and no flashover are realized, and the partial discharge value is less than or equal to 10pC. The insulating plate needs to be selected with proper thickness and size according to electrical performance such as creepage distance and the like. The spraying thickness of the epoxy resin coated copper bar needs to be controlled according to insulation performance and the like. The finished adhesive copper bar has good electrical and insulating properties, and meets the requirements of the power industry for high-performance conductive parts.

The invention provides a wafer bonding device and a wafer bonding method, and belongs to the technical field of photoelectron manufacturing. The bonding device comprises two pressing plates and buffer pads, wherein the buffer pads are arranged on two opposite plate surfaces of the two pressing plates. The problem of non-uniform pressure in the bonding process can be improved, and the yield of the subsequent process is improved.

The invention relates to the technical field of semiconductors, in particular to a chip thermocompression bonding device, which comprises a driving mechanism comprising a shell and a main shaft rotationally connected to the shell; the hot-pressing mechanism is detachably connected to the tail end of the main shaft, the hot-pressing mechanism and the main shaft are communicated in the axial direction to form a first channel, the hot-pressing mechanism comprises a heat dissipation assembly and a heating assembly in the axial direction, the heat dissipation assembly and the heating assembly are sequentially conducted through the first channel, and the tail end of the heating assembly is used for adsorbing a chip; and the protection mechanism is internally provided with a plurality of second channels, the input ends of the second channels are used for introducing protective gas, and the output ends of the second channels are arranged towards the hot pressing mechanism so as to output the protective gas to the chip and cool the hot pressing mechanism. The chip is prevented from being oxidized or polluted at high temperature, and meanwhile, the temperature of the hot-pressing mechanism and the main shaft is reduced, so that accurate movement and positioning of the pressing head are ensured, and the bonding quality and the reliability of a final product are improved.

Embodiments of methods of die stacking are provided herein. In some embodiments, a method of die stacking using die-to-wafer bonding includes: bonding a plurality of first dies to a substrate by a hybrid bonding process; performing a selective silicon (Si) thinning process to reduce the thickness of the plurality of bonded first grains to form a plurality of thinned first grains; passivating the plurality of thinned first crystal grains to form a plurality of passivated thinned first crystal grains so as to protect the plurality of thinned first crystal grains; filling gaps between adjacent grains in the plurality of thinned first grains with a first filling material, wherein the plurality of passivated thinned first grains and the first filling material form a first layer; and forming a plurality of first conductive vias through the first layer to the substrate.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The utility model discloses amorphous strip composite forming equipment in the technical field of strip composite forming, which comprises a base, a plurality of groups of pressing assemblies arranged at equal intervals are arranged at the top of the base, a plurality of groups of control assemblies in one-to-one correspondence with the pressing assemblies are mounted at the bottom of the base, and the control assemblies are used for controlling the pressing assemblies to limit the top of an amorphous thin material. And guide assemblies which are in bilateral symmetry are arranged between the base and each set of downward pressing assemblies, the guide assemblies are used for limiting the two sides of the amorphous thin material, and each downward pressing assembly comprises two sets of guide pins which are installed in the base in an up-down sliding mode and are in bilateral symmetry. The problems that due to the fact that all layers of materials of the composite strip are thin, the difficulty of deviation rectification of the ductility direction and the like during thin material conveying is large, the direction of the thin materials is difficult to accurately control, the difficulty of gluing uniformity between the multiple layers of thin materials is high, and bubbles generated in the attaching process cannot be effectively discharged are solved.