448 results about "Lead bonding" patented technology

The invention discloses a lead bonding method and device based on dynamic self-adaption, equipment and a storage medium. The method comprises the following steps: based on position information of a first bonding point, position information of a second bonding point and parameter information of a lead, performing path planning on lead bonding through a multi-objective optimization algorithm, and generating an initial bonding path in a preset line arc shape; bonding a lead to a first bonding point of the chip bonding pad and applying energy, pulling the lead to the substrate bonding pad according to the generated initial bonding path, and monitoring bonding path information of the lead in real time in the pulling process; and when the monitored bonding path information of the lead exceeds a preset threshold range, dynamically adjusting the initial bonding path, pulling the lead to a second bonding point of the substrate bonding pad based on the adjusted bonding path, and applying energy to the second bonding point to obtain a chip after lead bonding. According to the invention, the problem of short circuit or poor contact caused by lead overlapping can be avoided, and the lead bonding efficiency is effectively improved.

According to one embodiment, a controller of a wire bonding apparatus is configured to calculate a height of a bump based on a diameter of a ball-shaped portion detected by a diameter detecting part, a first position of a bonding tool detected by a position detecting part when a load sensor detects a load at a bonding point, and a second position of the bonding tool when the bonding tool is lowered most at the bonding point, and to bond a wire based on the calculated height of the bump. The controller is further configured to acquire a plurality of the first positions of a plurality of the bumps formed on a chip, and to calculate a relative positional relationship of the plurality of first positions.

The invention discloses a packaging structure and a packaging method of a SiP module based on a ceramic material, the packaging structure takes the ceramic material as a packaging shell, the position of a substrate part of the shell is designed to be a concave staggered layer structure, so that the assembly of chips and passive devices with different sizes and different heights is facilitated, and because the internal circuit of the SiP module is complicated and the number of interface pins is large, the packaging cost is low. Therefore, a ball grid array pin mode is adopted outside the shell, a metallization layout design is carried out on the ceramic substrate to realize chip assembly bonding pad and partial circuit wiring, and meanwhile, through hole metallization slurry filling is designed between substrates to realize connection of an internal metallization bonding pad and an external ball grid array pin. And a specific chip and a passive device are assembled at different positions, and lead bonding interconnection is assisted, so that a complete packaging process of a specific circuit SiP module is realized. The power distribution cabinet has the advantages of being good in insulation performance, ultrahigh in integration level, ultra-light in weight, fast in heat dissipation, high in reliability and the like, and has very high popularization value.

The invention provides a packaging method for a double-color-temperature COB light source, and relates to the technical field of LED light source packaging. The packaging method of the double-color-temperature COB light source comprises the following steps of (1) substrate pretreatment, (2) chip die bonding, (3) lead bonding, (4) fluorescent powder layer preparation, (5) packaging glue filling and (6) curing treatment. The substrate is subjected to special pretreatment, so that the adhesive force between the substrate and the packaging material is improved, and the reliability of the light source is enhanced. Through high-precision chip die bonding and an optimized lead bonding process, the chip position precision and the electrical connection reliability are ensured, and the optical performance consistency of the light source is improved. Through precise fluorescent powder proportion regulation and control and an ink-jet printing coating technology, precise regulation and control of double color temperatures are achieved, and the lighting requirements of different scenes are met. Through precise fluorescent powder proportion regulation and control and an ink-jet printing coating technology, precise regulation and control of double color temperatures are achieved, and the lighting requirements of different scenes are met.

A method of forming a wire bond assembly includes wire bonding a first end of a first bond wire to a first conductive bonding surface arranged on a first substrate to form a first conductive bond formation; wire bonding a second end of the first bond wire to a second conductive bonding surface arranged on a second substrate to form a second conductive bond formation, wherein the second substrate; forming a conductive structure on top of the first conductive bond formation; wire bonding a first end of a second bond wire to a top of the conductive structure to form a third conductive bond formation; and wire bonding a second end of the second bond wire to the second conductive bonding surface to form a fourth conductive bond formation, wherein the fourth conductive bond formation is laterally separated from the second conductive bond formation on the second conductive bonding surface.

The invention discloses a discrete device packaging structure based on direct lead bonding, which belongs to the technical field of semiconductor device packaging and comprises a power semiconductor chip, a drain metal substrate, a grid lead terminal, a drain lead terminal, a bonding wire and a supporting shell. The drain electrode metal substrate is connected with the lower surface of the power semiconductor chip through solder. The gate metal electrode on the upper surface of the power semiconductor chip is connected with the gate lead terminal through a bonding wire, and the source metal electrode on the upper surface of the power semiconductor chip is connected with the source lead terminal through solder. The interior of the supporting shell is filled with silica gel or an injection molding process, and the supporting shell covers the power semiconductor chip to serve as an insulating medium. The power density of the device is improved, the parasitic parameter of the whole device is reduced, and the reliability of the interconnection structure is improved.

The invention discloses a lead bonding method for a vacuum solid hybrid device similar to 3D laminated packaging, and the method comprises the following steps: S1, dividing all leads with the same height difference between a chip bonding pad and a pin bonding pad into the same group of leads according to the definition of electrical connection; s2, the high point position of each group of lead bonding is defined as a chip bonding pad and is a first lead bonding point, and the low point position of each group of lead bonding is defined as a pin bonding pad and is a second lead bonding point; and S3, the bonding mode of each lead is as follows: after a convex section is arranged from the first welding point, a first folding point (K1) is formed, then the convex section is connected with the concave section and is connected with a reverse section, the reverse section is connected with a second folding point (K2), and a platform section opposite to the first welding point is arranged behind the second folding point (K2). According to the method, the bonding efficiency can be improved, the reliability of the bonding wire is ensured, and the performance stability of the device is improved.

A wire bonding array is provided. The wire bonding array includes a plurality of wire bonding systems, each of the plurality of wire bonding systems including (i) an input workpiece handling system and (ii) a bond head assembly configured to carry a wire bonding tool. The wire bonding array also includes a robot configured to provide workpieces to the input workpiece handling system of each of the plurality of wire bonding systems, the robot including a carriage for moving with respect to the plurality of wire bonding systems, the carriage being positioned above a receiving portion of the input workpiece handling system.

The invention discloses a wire bonding machine force position control method based on force estimation. The method comprises the following steps: measuring the current of a voice coil motor for driving bonding based on a designed force estimator so as to estimate the value of contact force; setting a force estimation threshold value F0 and a speed threshold value v0, and designing a force / position control strategy according to the estimated contact force Fcontact and the bonding motion speed v measured by the grating ruler; the force / position control strategy obtained through design is as follows: when Fcontact is less than F0, position control is performed on the bonding head; when Fcontact is larger than or equal to F0 and v / vref is smaller than v0, force control is adopted for the bonding head; and when Fcontact is greater than or equal to F0 and v / vref is greater than or equal to v0, performing position control on the bonding head. The method has the advantages that a force sensor does not need to be installed on the bonding head, the data information of the position sensor is accurately utilized, force estimation is achieved through an estimation algorithm, and therefore the design cost of a system is reduced while the bonding precision of the bonding head is improved.

The invention discloses a wire arc parameter compensation method and device of a wire bonding machine, computer equipment and a medium, and the method comprises the steps: determining a wire arc shape and a wire arc parameter based on the packaging demand of a target chip; based on the line arc shape and the line arc parameter, welding the target chip to form an initial line arc; whether the initial line arc meets a preset welding requirement or not is determined; if the initial line arc does not meet the preset welding requirement, compensation parameters are determined, and the compensation parameters comprise at least one of angle compensation and line length compensation; and compensating the wire arc parameter based on the compensation parameter, and welding the target chip based on the compensated wire arc parameter and the wire arc shape to form a qualified wire arc meeting the preset welding requirement. In the embodiment of the invention, the line arcs of different angles and different line lengths of the device are compensated to adjust the height and the pay-off deviation of the line arcs, so that a relatively good height compensation effect is obtained.

A wire guide configured for use with a wire bonding system is provided. The wire guide includes a body portion configured to receive a wire. The body portion includes a tip portion at an end of the body portion. The tip portion defines an opening through which the wire exits the wire guide. The tip portion includes a protrusion adjacent the opening.

A semiconductor device module for use in high-power applications incorporates a lead frame and a wire bonding scheme designed to improve reliability and reduce cost. A combination of aluminum wire bonds and gold wire bonds can be used to connect dies of different sizes, formed on different substrates, or that use different bonding materials to a shared underlying structure. Instead of making direct connections between the dies, the different types of wire bonds can be coupled to an intermediate floating pad.

A wire bonding system is provided. The wire bonding system includes a bond head assembly configured to carry a wire bonding tool. The wire bonding system also includes a support structure configured to support a workpiece. The workpiece is configured for wire bonding. The wire bonding system also includes a movable stage assembly including a movable stage configured to move with respect to the wire bonding tool. The wire bonding tool is configured to press a wire engaged with the wire bonding tool against the movable stage to create a deformed portion of the wire.

The invention relates to the technical field of semiconductor packaging, and discloses a packaging method and equipment for a strong exhaust chip, and the packaging method comprises the steps: carrying out the thin film deposition of the surface of a chip body, carrying out the micromachining of a porous ceramic substrate, forming an installation groove and an air flow channel, fixing a pretreatment body in the installation groove based on a preset adhesive, and carrying out the packaging of a strong exhaust chip. Carrying out lead bonding on the conductive layer and the conductive path, coating the electric connection assembly with multiple layers of preset polymers, carrying out enhanced filling on the pre-packaged assembly based on a preset filler, and carrying out surface smoothing treatment on the pre-packaged assembly after enhanced filling to obtain a strong exhaust chip; after the pretreatment body is fixed, the cofferdam structure is dispensed with the silicone-based adhesive and is dynamically cured, the cofferdam structure effectively prevents external pollutants from entering, and the conductivity of the electric connection assembly is optimized due to the combination of lead bonding and the silicone-based adhesive; and the stable working state of the chip in the high-efficiency heat dissipation and gas emission process is further ensured.

The invention provides a lead bonding and packaging device and a lead bonding and packaging method for a key process for packaging a deep cavity lead of an immersion type miniature liquid pressure sensor. The lead bonding packaging equipment comprises a rack, a movement mechanism mounting plate, an X-axis movement mechanism, a Y-axis movement mechanism, a first Z-axis movement mechanism and a second Z-axis movement mechanism, the movement mechanism mounting plate, the X-axis movement mechanism, the Y-axis movement mechanism, the first Z-axis movement mechanism and the second Z-axis movement mechanism are all mounted on the rack, a clamping mechanism is mounted on the X-axis movement mechanism or the Y-axis movement mechanism, and a visual microscopic mechanism is mounted on the first Z-axis movement mechanism. And a chopper positioning mechanism is mounted on the second Z-axis movement mechanism. According to the technical scheme provided by the invention, the alignment accuracy and stability in the wire leading process can be ensured, the yield and consistency of deep cavity bonding are improved, manual intervention and operation errors are reduced, automation of the wire bonding process is realized, the bonding precision and stability are improved, and the method has relatively high practicability and popularization value.

The invention belongs to the technical field of chip packaging, and particularly relates to a microchip packaging structure with mixed lead bonding and a packaging method.The microchip packaging structure comprises a carrier plate, a plurality of chips are stacked on the upper surface of the carrier plate in a staggered mode, the carrier plate is in bonding connection with the chips attached to the carrier plate through first leads, and every two adjacent odd-number chips are in bonding connection through second leads; every two adjacent chips in the even number position are in bonding connection through a third lead, every two adjacent chips on the uppermost layer are in bonding connection through a fourth lead, the multiple chips are stacked in a staggered mode, lead bonding between every two chips is facilitated, meanwhile, the structure is stable, occupied transverse space is reduced, and the chip packaging structure is a micro chip packaging structure and is suitable for installation and use of micro equipment.

The present invention refers to a hybrid integrated silicon drift detector (HiSDD) for X-ray detection, particularly to a HiSDD combining a silicon drift detector (SDD) with a low-noise preamplifier on a SDD sensor chip to improve the electrical and structural properties of the detector assembly. The invention further refers to a corresponding method for the fabrication of a HiSDD. A HiSDD according to the invention hybridly integrates a silicon drift detector, SDD, sensor chip and a preamplifier module; wherein electrically conductive paths are formed on a surface of the SDD sensor chip, having first ends configured for flip chip bonding and second ends configured for wire bonding; wherein the preamplifier module having contacts disposed on a surface of the preamplifier module, and wherein the first ends of the electrically conductive paths are flip chip bonded to the contacts of the preamplifier module.

Purpose is to realize a flexible electronic device of high reliability. The present invention takes a following structure to realize the purpose. An electronic device including: a plurality of element areas, famed from a first organic insulating film, and formed in island shape arranged in a first direction with a first space and arranged in a second direction with a second space, in which an element, a first wiring extending in the first direction and a second wiring extending in the second direction are formed in each of the plurality of element areas, the first wirings famed in the plurality of the element areas are connected with each other by a first wire bonding in the first direction, and the second wirings famed in the plurality of the element areas are connected with each other by a second wire bonding in the second direction.

Described herein are isolator devices designed to reduce cracking and mechanical stress despite the use of wire bonds made of hard materials (e.g., copper-based). The isolators employ thin film dielectric materials with high dielectric strength and permittivity underneath the top coil (electrode) to enhance the isolation of the device. However, these materials are susceptible to cracking. Described herein are designs in which the dielectric material is partially removed from the isolator. A dielectric layer may be kept in the region(s) where its large dielectric permittivity is particularly beneficial (e.g., near the edge of a coil) but may be removed from the region immediately underneath the bonding pad, where a large amount of pressure is applied during the bonding process. Optionally, a cushion layer is employed to absorb some of the energy produced during the bonding process.

The invention relates to the technical field of bonding equipment displacement compensation, in particular to a high-speed lead bonding equipment motion platform displacement error dynamic compensation method and device, and the method comprises the steps: carrying out the real-time collection of state parameters of a motion platform, and obtaining multi-dimensional real-time monitoring data; based on the multi-dimensional real-time monitoring data, independently estimating real-time characteristic parameters of the platform through a plurality of preset identification algorithms executed in parallel; inputting the real-time characteristic parameters of the platform into a preset multi-error-source coupling prediction algorithm, and calculating to obtain a predicted displacement deviation of the motion platform in a future preset time window; determining a corresponding position precision tolerance interval according to the requirement of the current bonding process step on the positioning precision; establishing a multi-objective optimization problem; and performing rolling time domain solution on the multi-objective optimization problem, generating a collaborative compensation instruction in real time, and executing the collaborative compensation instruction. According to the invention, accurate prediction and collaborative dynamic compensation can be carried out on various time-varying coupling errors under the condition of high-speed motion.

The invention provides a multi-chip stacked double-sided heat dissipation silicon carbide power module, and relates to the technical field of chip packaging, and the power module comprises a first DBC substrate, a second DBC substrate, a negative direct current terminal, an alternating current terminal and a positive direct current terminal, and the first DBC substrate and the second DBC substrate are sequentially provided with an upper copper pattern layer, an aluminum nitride ceramic layer and a lower conductive copper layer. Wherein the upper copper pattern layers of the first DBC substrate and the second DBC substrate are oppositely arranged, and a plurality of SiC chips are arranged on the upper copper pattern layers. An upper DBC substrate and a lower DBC substrate are integrated, the DBC substrates adopt chip stacking, the number of chips connected in parallel is increased, double-face heat dissipation is achieved, more chips can be connected in parallel, and the power density of the power module is improved. The terminals are adopted to replace most of lead bonding to reduce parasitic inductance, the terminals are designed according to circuit topology to realize interconnection between chips and interconnection between the chips and the terminals, the proposed structure can effectively realize similarity of stray inductance between the chips and between the upper sides and the lower sides of the chips, and the stray inductance of the module is reduced.

Apparatuses relating generally to a microelectronic package having protection from electromagnetic interference are disclosed. In an apparatus thereof, a platform has an upper surface and a lower surface opposite the upper surface and has a ground plane. A microelectronic device is coupled to the upper surface of the platform. Wire bond wires are coupled to the ground plane with a pitch. The wire bond wires extend away from the upper surface of the platform with upper ends of the wire bond wires extending above an upper surface of the microelectronic device. The wire bond wires are spaced apart from one another to provide a fence-like perimeter to provide an interference shielding cage. A conductive layer is coupled to at least a subset of the upper ends of the wire bond wires for electrical conductivity to provide a conductive shielding layer to cover the interference shielding cage.

The application discloses a lead welding device for semiconductor packaging and relates to the technical field of semiconductor production, which comprises a connecting seat, one end of which is fixedly connected to an external driving device, the middle part of the other end of the connecting seat is provided with a matching hole, a first transmission shaft is matched with the matching hole through a bearing, and the middle part of the first transmission shaft is provided with a first lead hole; a lead pulling assembly is distributed at the wall surface of the connecting seat close to the top side of the first transmission shaft and the bottom of the first transmission shaft; a driving assembly is arranged at one side of the bottom end of the connecting seat, the output end of the driving assembly is fixedly connected with an adjusting structure, the adjusting structure is fixedly connected with a welding head, the middle part of the welding head is provided with a second lead hole; a position-stopping assembly is arranged at the other side of the bottom end of the connecting seat, the position-stopping assembly can realize automatic transmission of the lead, can control the length of the lead pulled out from the bottom end of the welding head, and can ensure that the length of the lead pulled out from the welding head is unchanged when the welding head welds the lead.

The invention provides a lead welding method for a semiconductor chip, and belongs to the technical field of semiconductor packaging. The method comprises the following steps: processing a metal capillary tube into a through-hole-shaped female end with a preset length, and carrying out functional coating treatment on the inner surface and the outer surface of the through-hole-shaped female end; positioning the plated female end in a manner that the through hole is axially parallel to a chip bonding pad, and fixing the plated female end by reflow soldering of a first solder; carrying out pre-tinning treatment on the welding end of the metal lead; inserting a lead welding end into the female end through hole; and low-temperature reflow soldering with the peak temperature lower than the melting point of the first solder is carried out, so that the tin coating is molten and metallurgically bonded with the inner surface coating of the female end. By introducing the capillary tube female end which is low in cost and easy to process and a step-by-step low-temperature welding process, the heat damage risk of the heat-sensitive semiconductor chip is remarkably reduced while the connection reliability is ensured, the production efficiency and the process compatibility are improved, and the method is particularly suitable for wire bonding of thermoelectric refrigeration chips.

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to a position above the wire bond; (c) moving the wire bonding tool to contact the length of wire, at a position along the length of wire, to partially sever the length of wire at the position along the length of wire; and (d) separating the length of wire from a wire supply at the position along the length of wire, thereby providing a wire interconnect structure bonded to the bonding location.

The utility model belongs to the technical field of semiconductor packaging, and relates to a clamping device which comprises a positioning assembly and a tool jig, the tool jig is fixed to the positioning assembly through the positioning effect of the positioning assembly and used for placing a product, and when the clamping device clamps the product, the tool jig is fixed to the positioning assembly through the positioning effect of the positioning assembly and used for clamping the product. The product is fixed in the tool jig through the positioning function of the tool jig. The tool jig can fix and position the product, and meanwhile, the positioning assembly can fix and position the tool jig, so that the product can be repeatedly and accurately positioned on the clamping device, the situation that the quality is poor during welding is avoided, the convenience and accuracy of product positioning are improved, and the production efficiency is improved. And meanwhile, the clamping device can be adapted to different products by replacing different tool jigs, so that the clamping device is adapted to more lead bonding equipment, the price is low, the maintenance is convenient, the equipment cost is reduced, and the equipment has higher cost performance.

The package-on-package (POP) structure includes a first package unit of three-dimensional fan-out memory chips and a SiP package unit of the two-dimensional fan-out peripheral circuit chip. The first package unit includes: memory chips laminated in a stepped configuration; a molded substrate; wire bonding structures; a first rewiring layer; a first encapsulating layer; and first metal bumps, formed on the first rewiring layer. The SiP package unit includes: a second rewiring layer; a peripheral circuit chip; a third rewiring layer, bonded to the circuit chip; first metal connection pillars; a second encapsulating layer for the circuit chip and the first metal connection pillars; and second metal bumps on the second rewiring layer. The first metal bumps are bonded to the third rewiring layer. Integrating the two package units into the POP is enabled by three rewiring layers and the molded substrate which supports the first package unit during wire bonding process.

A wire bonding tool is provided. The wire bonding tool includes a groove for receiving a bonding wire and a pair of jaws that define the side walls of the groove, each jaw having a pointed surface configured to face a bonding surface during operation, and the pointed surface of each jaw being curved.

A wire bonding device for bonding a wire to a target includes: a prediction part which predicts, based on time-series data of a diagnosis result regarding an operation of the wire bonding device, a transition of a change from the diagnosis result in an initial state; and a setting part which sets a time point at which the prediction part predicts that an amount of change from the diagnosis result in the initial state reaches a first threshold value as a time point for performing maintenance of the wire bonding device. The wire bonding device allows the maintenance to be performed suitably.

The utility model relates to the technical field of chip production, in particular to a chip positioning device for a lead bonding machine, which is mounted on a processing table, an upper mounting seat is mounted on the rear side of the top end of the outer wall of the processing table, and a lead processor is mounted on the upper mounting seat. A placing part for positioning and placing a chip is arranged at the top end of the outer wall of the processing table and located below the lead processor, the placing part comprises a chip positioning frame, and the two sides of the inner wall of the chip positioning frame are each provided with a movable clamping seat and a chip positioning seat which are used for clamping the chip. The chip positioning seat and the movable clamping seat are detachably fixed, so that a worker only needs to select the corresponding chip positioning seat according to the circuit board, and then the device can clamp and position different circuit boards within a certain size range, so that the applicability of the device can be improved, and the worker can conveniently use the device.