199 results about "Lead bonding" patented technology

The invention discloses a lead bonding method and device based on dynamic self-adaption, equipment and a storage medium. The method comprises the following steps: based on position information of a first bonding point, position information of a second bonding point and parameter information of a lead, performing path planning on lead bonding through a multi-objective optimization algorithm, and generating an initial bonding path in a preset line arc shape; bonding a lead to a first bonding point of the chip bonding pad and applying energy, pulling the lead to the substrate bonding pad according to the generated initial bonding path, and monitoring bonding path information of the lead in real time in the pulling process; and when the monitored bonding path information of the lead exceeds a preset threshold range, dynamically adjusting the initial bonding path, pulling the lead to a second bonding point of the substrate bonding pad based on the adjusted bonding path, and applying energy to the second bonding point to obtain a chip after lead bonding. According to the invention, the problem of short circuit or poor contact caused by lead overlapping can be avoided, and the lead bonding efficiency is effectively improved.

A wire guide configured for use with a wire bonding system is provided. The wire guide includes a body portion configured to receive a wire. The body portion includes a tip portion at an end of the body portion. The tip portion defines an opening through which the wire exits the wire guide. The tip portion includes a protrusion adjacent the opening.

A wire bonding system is provided. The wire bonding system includes a bond head assembly configured to carry a wire bonding tool. The wire bonding system also includes a support structure configured to support a workpiece. The workpiece is configured for wire bonding. The wire bonding system also includes a movable stage assembly including a movable stage configured to move with respect to the wire bonding tool. The wire bonding tool is configured to press a wire engaged with the wire bonding tool against the movable stage to create a deformed portion of the wire.

Described herein are isolator devices designed to reduce cracking and mechanical stress despite the use of wire bonds made of hard materials (e.g., copper-based). The isolators employ thin film dielectric materials with high dielectric strength and permittivity underneath the top coil (electrode) to enhance the isolation of the device. However, these materials are susceptible to cracking. Described herein are designs in which the dielectric material is partially removed from the isolator. A dielectric layer may be kept in the region(s) where its large dielectric permittivity is particularly beneficial (e.g., near the edge of a coil) but may be removed from the region immediately underneath the bonding pad, where a large amount of pressure is applied during the bonding process. Optionally, a cushion layer is employed to absorb some of the energy produced during the bonding process.

The invention relates to the technical field of bonding equipment displacement compensation, in particular to a high-speed lead bonding equipment motion platform displacement error dynamic compensation method and device, and the method comprises the steps: carrying out the real-time collection of state parameters of a motion platform, and obtaining multi-dimensional real-time monitoring data; based on the multi-dimensional real-time monitoring data, independently estimating real-time characteristic parameters of the platform through a plurality of preset identification algorithms executed in parallel; inputting the real-time characteristic parameters of the platform into a preset multi-error-source coupling prediction algorithm, and calculating to obtain a predicted displacement deviation of the motion platform in a future preset time window; determining a corresponding position precision tolerance interval according to the requirement of the current bonding process step on the positioning precision; establishing a multi-objective optimization problem; and performing rolling time domain solution on the multi-objective optimization problem, generating a collaborative compensation instruction in real time, and executing the collaborative compensation instruction. According to the invention, accurate prediction and collaborative dynamic compensation can be carried out on various time-varying coupling errors under the condition of high-speed motion.

Apparatuses relating generally to a microelectronic package having protection from electromagnetic interference are disclosed. In an apparatus thereof, a platform has an upper surface and a lower surface opposite the upper surface and has a ground plane. A microelectronic device is coupled to the upper surface of the platform. Wire bond wires are coupled to the ground plane with a pitch. The wire bond wires extend away from the upper surface of the platform with upper ends of the wire bond wires extending above an upper surface of the microelectronic device. The wire bond wires are spaced apart from one another to provide a fence-like perimeter to provide an interference shielding cage. A conductive layer is coupled to at least a subset of the upper ends of the wire bond wires for electrical conductivity to provide a conductive shielding layer to cover the interference shielding cage.

The invention provides a lead welding method for a semiconductor chip, and belongs to the technical field of semiconductor packaging. The method comprises the following steps: processing a metal capillary tube into a through-hole-shaped female end with a preset length, and carrying out functional coating treatment on the inner surface and the outer surface of the through-hole-shaped female end; positioning the plated female end in a manner that the through hole is axially parallel to a chip bonding pad, and fixing the plated female end by reflow soldering of a first solder; carrying out pre-tinning treatment on the welding end of the metal lead; inserting a lead welding end into the female end through hole; and low-temperature reflow soldering with the peak temperature lower than the melting point of the first solder is carried out, so that the tin coating is molten and metallurgically bonded with the inner surface coating of the female end. By introducing the capillary tube female end which is low in cost and easy to process and a step-by-step low-temperature welding process, the heat damage risk of the heat-sensitive semiconductor chip is remarkably reduced while the connection reliability is ensured, the production efficiency and the process compatibility are improved, and the method is particularly suitable for wire bonding of thermoelectric refrigeration chips.

The package-on-package (POP) structure includes a first package unit of three-dimensional fan-out memory chips and a SiP package unit of the two-dimensional fan-out peripheral circuit chip. The first package unit includes: memory chips laminated in a stepped configuration; a molded substrate; wire bonding structures; a first rewiring layer; a first encapsulating layer; and first metal bumps, formed on the first rewiring layer. The SiP package unit includes: a second rewiring layer; a peripheral circuit chip; a third rewiring layer, bonded to the circuit chip; first metal connection pillars; a second encapsulating layer for the circuit chip and the first metal connection pillars; and second metal bumps on the second rewiring layer. The first metal bumps are bonded to the third rewiring layer. Integrating the two package units into the POP is enabled by three rewiring layers and the molded substrate which supports the first package unit during wire bonding process.

A wire bonding tool is provided. The wire bonding tool includes a groove for receiving a bonding wire and a pair of jaws that define the side walls of the groove, each jaw having a pointed surface configured to face a bonding surface during operation, and the pointed surface of each jaw being curved.

A wire bonding device for bonding a wire to a target includes: a prediction part which predicts, based on time-series data of a diagnosis result regarding an operation of the wire bonding device, a transition of a change from the diagnosis result in an initial state; and a setting part which sets a time point at which the prediction part predicts that an amount of change from the diagnosis result in the initial state reaches a first threshold value as a time point for performing maintenance of the wire bonding device. The wire bonding device allows the maintenance to be performed suitably.

The utility model relates to the technical field of chip production, in particular to a chip positioning device for a lead bonding machine, which is mounted on a processing table, an upper mounting seat is mounted on the rear side of the top end of the outer wall of the processing table, and a lead processor is mounted on the upper mounting seat. A placing part for positioning and placing a chip is arranged at the top end of the outer wall of the processing table and located below the lead processor, the placing part comprises a chip positioning frame, and the two sides of the inner wall of the chip positioning frame are each provided with a movable clamping seat and a chip positioning seat which are used for clamping the chip. The chip positioning seat and the movable clamping seat are detachably fixed, so that a worker only needs to select the corresponding chip positioning seat according to the circuit board, and then the device can clamp and position different circuit boards within a certain size range, so that the applicability of the device can be improved, and the worker can conveniently use the device.

The utility model discloses an IC packaging carrier plate, comprising a substrate and a plurality of unit circuits, each unit circuit comprises at least one lead bonding electrode, the substrate is a copper-clad plate substrate, the lead bonding electrode comprises a copper layer, an aluminum-based bonding pad attached to the outer surface of the copper layer and a welding pad attached to the outer surface of the copper layer, the copper layer of the lead bonding electrode is a part of the copper foil layer of the copper-clad plate. The copper foil layer of the copper-clad plate is directly used as a copper layer of an electrode, so that material waste and processing steps are reduced; the aluminum-based bonding pad provides good bonding performance, the surface treatment cost is low, the problems of high cost, complex process and the like in the prior art are solved, and a good technical effect is brought.

A connector for connecting a gas pipe and a heating component of a wire bonder includes a first connection end for connecting the connector to the heating component, and a second connection end for connecting the connector to the gas pipe. A heat-insulation tube is connected between the first connection end and the second connection end. The heat-insulation tube is made of a heat-insulation material and configured to insulate or reduce heat transfer between the first connection end and the second connection end. The connector may further include a first fastening sleeve for fastening the connection between the first connection end and the heat-insulation tube, and a second fastening sleeve for fastening the connection between the second connection end and the heat-insulation tube.

According to the semiconductor packaging structure and the preparation method thereof provided by the invention, the semiconductor chip is wrapped by the plastic packaging layer, so that the risk of chip fracturing during lamination can be reduced; a plurality of semiconductor chips are connected in parallel through a metal plate or a metal layer, and a small-area electrode metal disc of a single chip is converted into a large-area metal disc of the metal layer, so that the influence of the positions of the chips on the laser drilling precision is avoided, and the effects of enlarging the process window range of pressing and laser drilling in the embedding process and reducing the reject ratio are achieved; meanwhile, the large-area metal layer can accommodate more laser holes to lead out electroplated metal, so that the volume of a lead-out metal wire is increased, and the through-flow and heat dissipation capabilities are improved; and the flexibility and high precision of metal lead bonding enable the method to be compatible with surface metals of various existing semiconductor chips.

The invention relates to a three-dimensional stacked microsystem for communication, navigation and electromagnetic spectrum monitoring application. The three-dimensional stacked microsystem comprises a high-density interconnection substrate; the plurality of functional core particles comprise radio frequency direct sampling core particles and digital baseband processing core particles; the at least one radio frequency channel micro module is arranged on the first side of the high-density interconnection substrate; area array vertical electrical interconnection among the radio frequency channel micro module, the functional core particles and the high-density interconnection substrate and among the functional core particles is realized through micro salient points. The internal structure of the microsystem does not comprise a lead bonding structure. According to the invention, a lead bonding process can be abandoned, a full-flip and wafer-level stacking technology is adopted, and the limitation of volume, weight and signal bandwidth is further broken through through a more optimized radio frequency direct acquisition layout and a full-silicon-based cavity structure, so that the urgent demand of a lightweight unmanned platform on a conduction, guidance and supervision integrated load is met; the system has the characteristics of high performance, miniaturization and low power consumption.

The invention discloses an ultra-low arc wire bonding method and an ultra-thin intelligent card module, after a bonding wire and a bonding pad form a first welding spot, the bonding method adopts a welding head of a wire bonding machine to carry out shaping wire bonding on the bonding wire, and the bonding method comprises the following steps: vertically moving the welding head upwards from the first welding spot along a Z direction to a first node; the welding head moves downwards to a second node smoothly while moving away from the second welding spot from the first node in the X direction; the welding head smoothly moves upwards from the second node to a third node; moving the welding head from the third node to a fourth node right above the bonding pad; micro-energy ultrasonic treatment is downwards applied to the bonding wire in the Z direction through a welding head; the welding head is moved from the fourth node to a fifth node which is located on the side, away from the second welding spot in the X direction, of the third node and located above the third node; and moving the welding head to the second welding spot for bonding connection. It is ensured that the tension value of the first welding spot is higher than 9 gf, and the wire arc height of the bonding wire is not larger than 45 microns.

A bonding tool replacement apparatus for inserting a bonding tool into a retaining hole of a wire bonding apparatus includes a frame, a bonding tool gripper and a compliant structure. The bonding tool gripper is supported by the frame and configured to grip the bonding tool and insert it into the retaining hole at an operation position associated with the wire bonding apparatus by moving the bonding tool toward the retaining hole. The compliant structure flexibly couples the bonding tool gripper to the frame to enable relative movement of the bonding tool gripper with respect to the frame. The compliant structure is configured to deform in response to misalignment between the bonding tool gripped by the bonding tool gripper and the retaining hole during insertion to allow the bonding tool to deflect into alignment with the retaining hole when the bonding tool and the retaining hole are misaligned.

A semiconductor package may include a buffer die including a plurality of first wire bonding pads, a first group of core dies sequentially stacked on the buffer die, a first interposer on the first group of core dies and including a plurality of first lower connection pads in a lower surface of the first interposer to face the plurality of first wire bonding pads, respectively, a plurality of first conductive wires extending vertically from the plurality of first wire bonding pads between the buffer die and the first interposer, the plurality of first conductive wires being connected to the plurality of first lower connection pads, respectively, and a second group of core dies sequentially stacked on the first interposer.

A wire guide configured for use with a wire bonding system is provided. The wire guide includes a body portion configured to receive a wire. The body portion includes a tip portion at an end of the body portion. The tip portion defines an opening through which the wire exits the wire guide. The tip portion includes a protrusion adjacent the opening.

The invention is suitable for the technical field of chip packaging, and provides a chip packaging method which comprises the following steps: providing a carrier plate which is provided with a plurality of packaging areas; a first chip is fixed in each packaging area, and the first chip is provided with a first type of bonding pads; electrically connecting the first type of bonding pads of the first chip with the carrier plate through a lead bonding process; carrying out first plastic packaging on the carrier plate so as to enable a first plastic packaging layer to wrap the first chip; and segmenting the carrier plate according to the packaging area to obtain a packaged chip. The requirement of the lead bonding process on the bonding pad of the chip is relatively low, and the chip and the carrier plate are connected through the lead bonding process, so that the method can adapt to the chip with the small bonding pad. Compared with the scheme that the size and the position of the chip bonding pad are adjusted through surface metal modification and rewiring in the existing board-level packaging process, the technical process can be effectively simplified, and the cost is saved.

The application relates to the technical field of mold pressing plates, in particular to a mold pressing plate for circuit connection wire bonding, which comprises a mold pressing plate body, the outer wall of one side of the mold pressing plate body is fixedly connected with a vacuum pump, the outer wall of one side of the mold pressing plate body is fixedly connected with a controller on one side of the vacuum pump, the output end of the vacuum pump is fixedly connected with an exhaust pipe, the input end of the vacuum pump is fixedly connected with a suction pipe, the inner wall of the mold pressing plate body is fixedly connected with a pressure sensor on one side of the suction pipe, and the inside of the suction pipe is rotationally connected with an electric valve. The electronic element is pressed to the surface of the suction pipe, so that the electronic element is fixed, movement during wire bonding is avoided, the bonding effect is influenced, correspondingly, the electronic element is fixed on the suction pipe by the atmospheric pressure, non-contact fixing is realized, the electronic element is prevented from being damaged by the use of a moving plate for fixing the electronic element, and the protectiveness of the electronic element is improved.

This invention relates to the field of wire bonding technology, and more particularly to a dual-path wire bonding device for semiconductor electronic packaging. The device includes a movable frame and a pressure bonding unit mounted at the bottom of the movable frame. The pressure bonding unit consists of a first wedge body and a second wedge body, which respectively perform pressure bonding on both ends of the lead. This invention effectively solves the problems of low efficiency and cumbersome operation in traditional single-bonding methods. By utilizing the first and second wedge bodies, pressure bonding can be applied to both ends of the lead simultaneously, facilitating a shorter bonding cycle for a single lead and improving welding efficiency. Furthermore, the welding path is transformed from complex movements between two solder points on a single lead and between different leads to movements only between different leads, effectively simplifying the device's movement trajectory and operation.

The invention relates to the technical field of microelectronic device packaging, and particularly discloses a high-thermal-conductivity low-outgassing packaging method for a high-power device, which comprises the following steps: putting a ceramic shell into an oven for baking to remove water molecules and organic matters adsorbed on the surface of the ceramic shell; coating a chip mounting area in the ceramic shell with sintered silver colloid; placing a chip on the surface of the sintered elargol; putting the ceramic shell after chip installation into a curing oven for curing so as to fix the chip in the chip installation area; connecting the chip with the ceramic shell by adopting a bonding wire; carrying out baking treatment on the ceramic shell after the lead bonding so as to remove water vapor on the surface of the ceramic shell after the lead bonding; and a cover plate is used for carrying out airtight packaging on the ceramic shell subjected to cap sealing pretreatment, so that the airtightness of the high-power device is ensured. The heat dissipation performance of the high-power device can be improved, the water vapor content in the high-power device is reduced, the reliability of the high-power device is improved, and the service life of the high-power device is prolonged.

The embodiment of the utility model discloses a power device packaging structure. The power device packaging structure comprises a heat dissipation substrate; a double-sided metal-coated substrate; the double-sided metal-coated substrate is arranged on one side of the heat dissipation substrate; a chip; the chip is arranged on one side, far away from the heat dissipation substrate, of the double-sided metal-coated substrate; a pin; one end of each pin is connected with one side, far away from the heat dissipation substrate, of the double-sided metal-coated substrate; bonding a lead; the bonding wires are used for connecting the chip and the pins; a package; the heat dissipation substrate, the chip, one end of the pin, the bonding lead and the double-sided metal-coated substrate are all arranged in the packaging body; and the other end of the pin is arranged outside the packaging body. According to the technical scheme of the embodiment of the utility model, the double-sided metal-coated substrate is arranged in the internal circuit, and the internal circuit is insulated and isolated from the heat dissipation substrate through the double-sided metal-coated substrate, so that the internal insulation of the power device is realized, the link of adding an insulating sheet during application and installation is omitted, the packaging cost is reduced, and the heat dissipation capability is improved.

The application discloses a micro-optical accelerometer with force balance feedback, which is composed of a MEMS sensitive unit, a grating unit, a detection unit and a plurality of packaging ceramic substrates, and is integrally packaged in a metal tube shell through wire bonding. The MEMS sensitive unit is composed of a plurality of spring-mass structures with a mirror and a lower metal electrode. The grating unit is composed of a plurality of triangularly distributed gratings with an upper metal electrode. The detection unit is composed of three triangularly distributed light transceiver assemblies. One light transceiver assembly contains a VCSEL laser and two PD detector chips. The plurality of packaging ceramic substrates assemble the units together according to the required interval, and the upper surface is distributed with metal pads to realize electrical connection with the outside. The application integrates the electrostatic force feedback function and a plurality of light transceiver assemblies. The micro-optical accelerometer can work in multiple modes, effectively suppresses cross-axis crosstalk, and realizes ultra-high precision acceleration measurement.

The invention provides an MEMS device and a packaging method thereof. The packaging method comprises the following steps: providing an MEMS device; the MEMS device comprises a first wafer, a second wafer and a third wafer which are mutually stacked, the second wafer is provided with a micro-mechanical structure, and the micro-mechanical structure is located in a cavity between the first wafer and the third wafer; a bonding structure is connected between the first wafer and the second wafer; the bonding structure comprises a bonding ring structure and a bonding anchor point structure, and the bonding anchor point structure is located in the bonding ring structure; and manufacturing a protection structure on the outer surface of the bonding ring structure. The technical problem solved by the invention is that water vapor tends to preferentially permeate and diffuse along interfaces among different materials. Especially, a relatively weak and key lead bonding interface is a key part for forming a cavity in which a micro-mechanical structure is located, and once water vapor permeates, the performance and the service life of a product are seriously damaged.

The utility model discloses a multi-chip ceramic packaging structure with heat dissipation and electromagnetic shielding functions, the front surface or the back surface of a ceramic shell is correspondingly divided into a plurality of chip areas, the area which is located on the front surface and is used for welding an IC integrated chip is provided with a corresponding bonding pad array, and the area which is used for welding a single-function chip is provided with a corresponding lead bonding area; a chip area for welding a power chip adopts a through cavity structure, and a heat sink is arranged at the bottom of the through cavity structure; a circle of metal shielding ring is arranged on the outer side of the chip area for welding the radio frequency chip, and the metal shielding ring is connected with a grounding layer in the ceramic shell through a metalized through hole; the IC integrated chip is interconnected with the corresponding bonding pad array through back-off welding, and the single-function chip is interconnected with the corresponding lead bonding area through lead bonding. According to the structure, chips with different types and different requirements can be integrated on one ceramic shell, and the working stability of each chip can be improved, so that the integration level of multi-chip packaging is improved.

A wire bond pull test apparatus for detecting a bond failure or wire breakage during a vertical tensile strength testing of a bonded wire under test. The test apparatus has a clamp structure with clamping elements and a controllable actuator coupled to at least one the clamping elements and configured to drive the movement of the clamping elements relative to each other to clamp the wire under test.

This application relates to the field of semiconductor processing, specifically a wire bonding collision detection method. The method includes acquiring the first position coordinates and first specification parameters of a workpiece, and the second position coordinates and second specification parameters of a wedge bonding head. Based on the first and second position coordinates, the method calculates the actual horizontal and vertical distances between the workpiece and the wedge bonding head. Based on the first and second specification parameters and the actual vertical distance, the method calculates the theoretical horizontal distance between the center of the workpiece and the bonding end of the wedge bonding head. Based on the comparison between the actual and theoretical horizontal distances, the method determines whether the workpiece will collide with the wedge bonding head during rotation. This application also provides related equipment for wire bonding collision detection. This method can predict collisions between the workpiece and the wedge bonding head in advance, effectively avoiding losses caused by collisions between the wedge and the workpiece, and ensuring processing continuity during production.

Disclosed is a battery module, which includes a cell stack including a plurality of battery cells, each of which has an electrode lead; a cover frame having a slit through which the electrode lead passes and configured to cover a front portion or a rear portion of the cell stack; and a lead bonding portion provided on an outer side of the cover frame and formed by overlapping the electrode leads of the battery cells so that at least a portion of the overlapping electrode leads is welded, wherein the cover frame includes a lead support unit configured to provide a pressing force from a rear surface of the lead bonding portion toward a front surface thereof so that the overlapping electrode leads come into close contact with the lead bonding portion