314 results about "Lead bonding" patented technology

The invention discloses a lead bonding method and device based on dynamic self-adaption, equipment and a storage medium. The method comprises the following steps: based on position information of a first bonding point, position information of a second bonding point and parameter information of a lead, performing path planning on lead bonding through a multi-objective optimization algorithm, and generating an initial bonding path in a preset line arc shape; bonding a lead to a first bonding point of the chip bonding pad and applying energy, pulling the lead to the substrate bonding pad according to the generated initial bonding path, and monitoring bonding path information of the lead in real time in the pulling process; and when the monitored bonding path information of the lead exceeds a preset threshold range, dynamically adjusting the initial bonding path, pulling the lead to a second bonding point of the substrate bonding pad based on the adjusted bonding path, and applying energy to the second bonding point to obtain a chip after lead bonding. According to the invention, the problem of short circuit or poor contact caused by lead overlapping can be avoided, and the lead bonding efficiency is effectively improved.

The invention discloses a discrete device packaging structure based on direct lead bonding, which belongs to the technical field of semiconductor device packaging and comprises a power semiconductor chip, a drain metal substrate, a grid lead terminal, a drain lead terminal, a bonding wire and a supporting shell. The drain electrode metal substrate is connected with the lower surface of the power semiconductor chip through solder. The gate metal electrode on the upper surface of the power semiconductor chip is connected with the gate lead terminal through a bonding wire, and the source metal electrode on the upper surface of the power semiconductor chip is connected with the source lead terminal through solder. The interior of the supporting shell is filled with silica gel or an injection molding process, and the supporting shell covers the power semiconductor chip to serve as an insulating medium. The power density of the device is improved, the parasitic parameter of the whole device is reduced, and the reliability of the interconnection structure is improved.

A wire bonding array is provided. The wire bonding array includes a plurality of wire bonding systems, each of the plurality of wire bonding systems including (i) an input workpiece handling system and (ii) a bond head assembly configured to carry a wire bonding tool. The wire bonding array also includes a robot configured to provide workpieces to the input workpiece handling system of each of the plurality of wire bonding systems, the robot including a carriage for moving with respect to the plurality of wire bonding systems, the carriage being positioned above a receiving portion of the input workpiece handling system.

The invention discloses a wire arc parameter compensation method and device of a wire bonding machine, computer equipment and a medium, and the method comprises the steps: determining a wire arc shape and a wire arc parameter based on the packaging demand of a target chip; based on the line arc shape and the line arc parameter, welding the target chip to form an initial line arc; whether the initial line arc meets a preset welding requirement or not is determined; if the initial line arc does not meet the preset welding requirement, compensation parameters are determined, and the compensation parameters comprise at least one of angle compensation and line length compensation; and compensating the wire arc parameter based on the compensation parameter, and welding the target chip based on the compensated wire arc parameter and the wire arc shape to form a qualified wire arc meeting the preset welding requirement. In the embodiment of the invention, the line arcs of different angles and different line lengths of the device are compensated to adjust the height and the pay-off deviation of the line arcs, so that a relatively good height compensation effect is obtained.

A wire guide configured for use with a wire bonding system is provided. The wire guide includes a body portion configured to receive a wire. The body portion includes a tip portion at an end of the body portion. The tip portion defines an opening through which the wire exits the wire guide. The tip portion includes a protrusion adjacent the opening.

A wire bonding system is provided. The wire bonding system includes a bond head assembly configured to carry a wire bonding tool. The wire bonding system also includes a support structure configured to support a workpiece. The workpiece is configured for wire bonding. The wire bonding system also includes a movable stage assembly including a movable stage configured to move with respect to the wire bonding tool. The wire bonding tool is configured to press a wire engaged with the wire bonding tool against the movable stage to create a deformed portion of the wire.

The invention provides a lead bonding and packaging device and a lead bonding and packaging method for a key process for packaging a deep cavity lead of an immersion type miniature liquid pressure sensor. The lead bonding packaging equipment comprises a rack, a movement mechanism mounting plate, an X-axis movement mechanism, a Y-axis movement mechanism, a first Z-axis movement mechanism and a second Z-axis movement mechanism, the movement mechanism mounting plate, the X-axis movement mechanism, the Y-axis movement mechanism, the first Z-axis movement mechanism and the second Z-axis movement mechanism are all mounted on the rack, a clamping mechanism is mounted on the X-axis movement mechanism or the Y-axis movement mechanism, and a visual microscopic mechanism is mounted on the first Z-axis movement mechanism. And a chopper positioning mechanism is mounted on the second Z-axis movement mechanism. According to the technical scheme provided by the invention, the alignment accuracy and stability in the wire leading process can be ensured, the yield and consistency of deep cavity bonding are improved, manual intervention and operation errors are reduced, automation of the wire bonding process is realized, the bonding precision and stability are improved, and the method has relatively high practicability and popularization value.

The present invention refers to a hybrid integrated silicon drift detector (HiSDD) for X-ray detection, particularly to a HiSDD combining a silicon drift detector (SDD) with a low-noise preamplifier on a SDD sensor chip to improve the electrical and structural properties of the detector assembly. The invention further refers to a corresponding method for the fabrication of a HiSDD. A HiSDD according to the invention hybridly integrates a silicon drift detector, SDD, sensor chip and a preamplifier module; wherein electrically conductive paths are formed on a surface of the SDD sensor chip, having first ends configured for flip chip bonding and second ends configured for wire bonding; wherein the preamplifier module having contacts disposed on a surface of the preamplifier module, and wherein the first ends of the electrically conductive paths are flip chip bonded to the contacts of the preamplifier module.

Described herein are isolator devices designed to reduce cracking and mechanical stress despite the use of wire bonds made of hard materials (e.g., copper-based). The isolators employ thin film dielectric materials with high dielectric strength and permittivity underneath the top coil (electrode) to enhance the isolation of the device. However, these materials are susceptible to cracking. Described herein are designs in which the dielectric material is partially removed from the isolator. A dielectric layer may be kept in the region(s) where its large dielectric permittivity is particularly beneficial (e.g., near the edge of a coil) but may be removed from the region immediately underneath the bonding pad, where a large amount of pressure is applied during the bonding process. Optionally, a cushion layer is employed to absorb some of the energy produced during the bonding process.

The invention relates to the technical field of bonding equipment displacement compensation, in particular to a high-speed lead bonding equipment motion platform displacement error dynamic compensation method and device, and the method comprises the steps: carrying out the real-time collection of state parameters of a motion platform, and obtaining multi-dimensional real-time monitoring data; based on the multi-dimensional real-time monitoring data, independently estimating real-time characteristic parameters of the platform through a plurality of preset identification algorithms executed in parallel; inputting the real-time characteristic parameters of the platform into a preset multi-error-source coupling prediction algorithm, and calculating to obtain a predicted displacement deviation of the motion platform in a future preset time window; determining a corresponding position precision tolerance interval according to the requirement of the current bonding process step on the positioning precision; establishing a multi-objective optimization problem; and performing rolling time domain solution on the multi-objective optimization problem, generating a collaborative compensation instruction in real time, and executing the collaborative compensation instruction. According to the invention, accurate prediction and collaborative dynamic compensation can be carried out on various time-varying coupling errors under the condition of high-speed motion.

Apparatuses relating generally to a microelectronic package having protection from electromagnetic interference are disclosed. In an apparatus thereof, a platform has an upper surface and a lower surface opposite the upper surface and has a ground plane. A microelectronic device is coupled to the upper surface of the platform. Wire bond wires are coupled to the ground plane with a pitch. The wire bond wires extend away from the upper surface of the platform with upper ends of the wire bond wires extending above an upper surface of the microelectronic device. The wire bond wires are spaced apart from one another to provide a fence-like perimeter to provide an interference shielding cage. A conductive layer is coupled to at least a subset of the upper ends of the wire bond wires for electrical conductivity to provide a conductive shielding layer to cover the interference shielding cage.

The application discloses a lead welding device for semiconductor packaging and relates to the technical field of semiconductor production, which comprises a connecting seat, one end of which is fixedly connected to an external driving device, the middle part of the other end of the connecting seat is provided with a matching hole, a first transmission shaft is matched with the matching hole through a bearing, and the middle part of the first transmission shaft is provided with a first lead hole; a lead pulling assembly is distributed at the wall surface of the connecting seat close to the top side of the first transmission shaft and the bottom of the first transmission shaft; a driving assembly is arranged at one side of the bottom end of the connecting seat, the output end of the driving assembly is fixedly connected with an adjusting structure, the adjusting structure is fixedly connected with a welding head, the middle part of the welding head is provided with a second lead hole; a position-stopping assembly is arranged at the other side of the bottom end of the connecting seat, the position-stopping assembly can realize automatic transmission of the lead, can control the length of the lead pulled out from the bottom end of the welding head, and can ensure that the length of the lead pulled out from the welding head is unchanged when the welding head welds the lead.

The invention provides a lead welding method for a semiconductor chip, and belongs to the technical field of semiconductor packaging. The method comprises the following steps: processing a metal capillary tube into a through-hole-shaped female end with a preset length, and carrying out functional coating treatment on the inner surface and the outer surface of the through-hole-shaped female end; positioning the plated female end in a manner that the through hole is axially parallel to a chip bonding pad, and fixing the plated female end by reflow soldering of a first solder; carrying out pre-tinning treatment on the welding end of the metal lead; inserting a lead welding end into the female end through hole; and low-temperature reflow soldering with the peak temperature lower than the melting point of the first solder is carried out, so that the tin coating is molten and metallurgically bonded with the inner surface coating of the female end. By introducing the capillary tube female end which is low in cost and easy to process and a step-by-step low-temperature welding process, the heat damage risk of the heat-sensitive semiconductor chip is remarkably reduced while the connection reliability is ensured, the production efficiency and the process compatibility are improved, and the method is particularly suitable for wire bonding of thermoelectric refrigeration chips.

The utility model belongs to the technical field of semiconductor packaging, and relates to a clamping device which comprises a positioning assembly and a tool jig, the tool jig is fixed to the positioning assembly through the positioning effect of the positioning assembly and used for placing a product, and when the clamping device clamps the product, the tool jig is fixed to the positioning assembly through the positioning effect of the positioning assembly and used for clamping the product. The product is fixed in the tool jig through the positioning function of the tool jig. The tool jig can fix and position the product, and meanwhile, the positioning assembly can fix and position the tool jig, so that the product can be repeatedly and accurately positioned on the clamping device, the situation that the quality is poor during welding is avoided, the convenience and accuracy of product positioning are improved, and the production efficiency is improved. And meanwhile, the clamping device can be adapted to different products by replacing different tool jigs, so that the clamping device is adapted to more lead bonding equipment, the price is low, the maintenance is convenient, the equipment cost is reduced, and the equipment has higher cost performance.

The package-on-package (POP) structure includes a first package unit of three-dimensional fan-out memory chips and a SiP package unit of the two-dimensional fan-out peripheral circuit chip. The first package unit includes: memory chips laminated in a stepped configuration; a molded substrate; wire bonding structures; a first rewiring layer; a first encapsulating layer; and first metal bumps, formed on the first rewiring layer. The SiP package unit includes: a second rewiring layer; a peripheral circuit chip; a third rewiring layer, bonded to the circuit chip; first metal connection pillars; a second encapsulating layer for the circuit chip and the first metal connection pillars; and second metal bumps on the second rewiring layer. The first metal bumps are bonded to the third rewiring layer. Integrating the two package units into the POP is enabled by three rewiring layers and the molded substrate which supports the first package unit during wire bonding process.

A wire bonding tool is provided. The wire bonding tool includes a groove for receiving a bonding wire and a pair of jaws that define the side walls of the groove, each jaw having a pointed surface configured to face a bonding surface during operation, and the pointed surface of each jaw being curved.

A wire bonding device for bonding a wire to a target includes: a prediction part which predicts, based on time-series data of a diagnosis result regarding an operation of the wire bonding device, a transition of a change from the diagnosis result in an initial state; and a setting part which sets a time point at which the prediction part predicts that an amount of change from the diagnosis result in the initial state reaches a first threshold value as a time point for performing maintenance of the wire bonding device. The wire bonding device allows the maintenance to be performed suitably.

The utility model relates to the technical field of chip production, in particular to a chip positioning device for a lead bonding machine, which is mounted on a processing table, an upper mounting seat is mounted on the rear side of the top end of the outer wall of the processing table, and a lead processor is mounted on the upper mounting seat. A placing part for positioning and placing a chip is arranged at the top end of the outer wall of the processing table and located below the lead processor, the placing part comprises a chip positioning frame, and the two sides of the inner wall of the chip positioning frame are each provided with a movable clamping seat and a chip positioning seat which are used for clamping the chip. The chip positioning seat and the movable clamping seat are detachably fixed, so that a worker only needs to select the corresponding chip positioning seat according to the circuit board, and then the device can clamp and position different circuit boards within a certain size range, so that the applicability of the device can be improved, and the worker can conveniently use the device.

The utility model discloses an IC packaging carrier plate, comprising a substrate and a plurality of unit circuits, each unit circuit comprises at least one lead bonding electrode, the substrate is a copper-clad plate substrate, the lead bonding electrode comprises a copper layer, an aluminum-based bonding pad attached to the outer surface of the copper layer and a welding pad attached to the outer surface of the copper layer, the copper layer of the lead bonding electrode is a part of the copper foil layer of the copper-clad plate. The copper foil layer of the copper-clad plate is directly used as a copper layer of an electrode, so that material waste and processing steps are reduced; the aluminum-based bonding pad provides good bonding performance, the surface treatment cost is low, the problems of high cost, complex process and the like in the prior art are solved, and a good technical effect is brought.

Bonding head of an ultrasonic wire bonder, wherein the bonding head comprises a bonding agent feed device for feeding a bonding wire as bonding agent, a bonding tool with an associated bonding tool drive for pressing the bonding agent onto a bonding surface with a predetermined contact force, and an ultrasonic transducer for imparting ultrasonic vibrations with a predetermined frequency or frequency spectrum and a predetermined direction of vibration to the bonding tool with the supplied bonding agent in order to produce a friction weld between the bonding agent and the bonding surface, wherein the bonding tool is designed as a bonding clamping holder with two clamping jaws configured such that the bonding agent can be held by the clamping jaws and pressed onto the bonding surface. the bond clamping holder has an actuator for actively bringing the clamping jaws together or pulling them apart in such a way that the bonding medium is held in the brought-together state, but is released in the pulled-out state, characterized by the fact that the bond clamp holder is designed in such a way that it essentially resonates with the ultrasonic transducer during operation, the ultrasonic transducer has frequency adjustment means for adjusting the vibration frequency and / or amplitude adjustment means for adjusting the vibration amplitude, in particular a resonance state with the bond clamp holder, and The actuator is only in mechanical contact with the clamping jaws during the process of bringing them together and pulling them apart, but not during the application of ultrasonic vibrations.

The invention discloses a wire adhesion detection circuit and a metal wire bonding machine, and the circuit comprises a capacitance-resistance oscillation circuit which is connected with a power supply end, a metal wire connection end of a to-be-detected device and a material sheet connection end, and outputs a first oscillation signal according to a preset impedance value and a first impedance value between the metal wire connection end and the material sheet connection end; the waveform processing circuit is connected with the capacitance-resistance oscillation circuit and converts the first oscillation signal into a first square wave signal; the signal processing circuit is connected with the waveform processing circuit, and the wire bonding state, namely the connection state between the metal lead and the material sheet, the connection state between the metal frame on the material sheet and the wafer, is obtained according to the signal parameters of the first square wave signal, so that high-cost devices such as a DDS (Direct Digital Synthesizer), a DAC (Digital-to-Analog Converter), an ADC (Analog-to-Digital Converter) and an RMS-DC converter are completely omitted; the method can be realized only by adopting the capacitance-resistance oscillation circuit, the waveform processing circuit and the signal processing circuit which are low in cost, the hardware cost is reduced, and the detection delay is only one or more cycles of the first square wave signal and is reduced from the millisecond level to the microsecond level.

A connector for connecting a gas pipe and a heating component of a wire bonder includes a first connection end for connecting the connector to the heating component, and a second connection end for connecting the connector to the gas pipe. A heat-insulation tube is connected between the first connection end and the second connection end. The heat-insulation tube is made of a heat-insulation material and configured to insulate or reduce heat transfer between the first connection end and the second connection end. The connector may further include a first fastening sleeve for fastening the connection between the first connection end and the heat-insulation tube, and a second fastening sleeve for fastening the connection between the second connection end and the heat-insulation tube.

According to the semiconductor packaging structure and the preparation method thereof provided by the invention, the semiconductor chip is wrapped by the plastic packaging layer, so that the risk of chip fracturing during lamination can be reduced; a plurality of semiconductor chips are connected in parallel through a metal plate or a metal layer, and a small-area electrode metal disc of a single chip is converted into a large-area metal disc of the metal layer, so that the influence of the positions of the chips on the laser drilling precision is avoided, and the effects of enlarging the process window range of pressing and laser drilling in the embedding process and reducing the reject ratio are achieved; meanwhile, the large-area metal layer can accommodate more laser holes to lead out electroplated metal, so that the volume of a lead-out metal wire is increased, and the through-flow and heat dissipation capabilities are improved; and the flexibility and high precision of metal lead bonding enable the method to be compatible with surface metals of various existing semiconductor chips.

A method of manufacturing a lead frame package device includes providing a lead frame including at least one lead bonding area and a plurality of leads extending from the at least one lead bonding area, where each lead bonding area includes a plurality of bonding pads; depositing a nickel-plated layer on each lead bonding area to form a nickel-plated bonding pad; depositing a plating layer shielding material on the nickel plating layer so as to form a shielding layer on the nickel plating layer; depositing a tin plating layer on the lead frame, including on the plurality of leads, in which the plating layer shielding material prevents the tin plating layer from contacting the nickel plating layer; removing the shielding layer from the lead frame to expose the nickel plating layer on each lead bonding area; attaching a die to the lead frame; and forming wire bonding between the tube core and the nickel plating bonding pad.

A wire bonding array is provided. The wire bonding array includes a plurality of wire bonding systems, each of the plurality of wire bonding systems including (i) an input workpiece handling system and (ii) a bond head assembly configured to carry a wire bonding tool. The wire bonding array also includes a robot configured to provide workpieces to the input workpiece handling system of each of the plurality of wire bonding systems, the robot including a carriage for moving with respect to the plurality of wire bonding systems, the carriage being positioned above a receiving portion of the input workpiece handling system.

The invention relates to a three-dimensional stacked microsystem for communication, navigation and electromagnetic spectrum monitoring application. The three-dimensional stacked microsystem comprises a high-density interconnection substrate; the plurality of functional core particles comprise radio frequency direct sampling core particles and digital baseband processing core particles; the at least one radio frequency channel micro module is arranged on the first side of the high-density interconnection substrate; area array vertical electrical interconnection among the radio frequency channel micro module, the functional core particles and the high-density interconnection substrate and among the functional core particles is realized through micro salient points. The internal structure of the microsystem does not comprise a lead bonding structure. According to the invention, a lead bonding process can be abandoned, a full-flip and wafer-level stacking technology is adopted, and the limitation of volume, weight and signal bandwidth is further broken through through a more optimized radio frequency direct acquisition layout and a full-silicon-based cavity structure, so that the urgent demand of a lightweight unmanned platform on a conduction, guidance and supervision integrated load is met; the system has the characteristics of high performance, miniaturization and low power consumption.

The invention discloses an ultra-low arc wire bonding method and an ultra-thin intelligent card module, after a bonding wire and a bonding pad form a first welding spot, the bonding method adopts a welding head of a wire bonding machine to carry out shaping wire bonding on the bonding wire, and the bonding method comprises the following steps: vertically moving the welding head upwards from the first welding spot along a Z direction to a first node; the welding head moves downwards to a second node smoothly while moving away from the second welding spot from the first node in the X direction; the welding head smoothly moves upwards from the second node to a third node; moving the welding head from the third node to a fourth node right above the bonding pad; micro-energy ultrasonic treatment is downwards applied to the bonding wire in the Z direction through a welding head; the welding head is moved from the fourth node to a fifth node which is located on the side, away from the second welding spot in the X direction, of the third node and located above the third node; and moving the welding head to the second welding spot for bonding connection. It is ensured that the tension value of the first welding spot is higher than 9 gf, and the wire arc height of the bonding wire is not larger than 45 microns.

A bonding tool replacement apparatus for inserting a bonding tool into a retaining hole of a wire bonding apparatus includes a frame, a bonding tool gripper and a compliant structure. The bonding tool gripper is supported by the frame and configured to grip the bonding tool and insert it into the retaining hole at an operation position associated with the wire bonding apparatus by moving the bonding tool toward the retaining hole. The compliant structure flexibly couples the bonding tool gripper to the frame to enable relative movement of the bonding tool gripper with respect to the frame. The compliant structure is configured to deform in response to misalignment between the bonding tool gripped by the bonding tool gripper and the retaining hole during insertion to allow the bonding tool to deflect into alignment with the retaining hole when the bonding tool and the retaining hole are misaligned.

A semiconductor package may include a buffer die including a plurality of first wire bonding pads, a first group of core dies sequentially stacked on the buffer die, a first interposer on the first group of core dies and including a plurality of first lower connection pads in a lower surface of the first interposer to face the plurality of first wire bonding pads, respectively, a plurality of first conductive wires extending vertically from the plurality of first wire bonding pads between the buffer die and the first interposer, the plurality of first conductive wires being connected to the plurality of first lower connection pads, respectively, and a second group of core dies sequentially stacked on the first interposer.

A wire guide configured for use with a wire bonding system is provided. The wire guide includes a body portion configured to receive a wire. The body portion includes a tip portion at an end of the body portion. The tip portion defines an opening through which the wire exits the wire guide. The tip portion includes a protrusion adjacent the opening.