The invention discloses a multi-
chip stack structure having 
through silicon via and a method for fabricating the same. The method includes: providing a 
wafer having a plurality of first chips; forming a plurality of holes on a first surface of each of the first chips and forming 
metal posts and solder pads corresponding to the holes so as to form a 
through silicon via (TSV) structure; forming at least one groove on a second surface of each of the first chips to 
expose the 
metal posts of the TSV structure so as to allow at least one second 
chip to be stacked on the first 
chip, received in the groove and electrically connected to the 
metal posts exposed from the groove; filling the groove with an insulating material for encapsulating the second chip; mounting conductive elements on the solder pads of the first surface of each of the first chips and singulating the 
wafer; and mounting and electrically connecting the stacked first and second chips to a 
chip carrier via the conductive elements. The 
wafer, which is not totally thinned but includes a plurality of first chips, severs a carrying purpose during the fabrication process and thereby solves problems, namely a complicated process, high cost, and 
adhesive layer 
contamination, facing the prior art that entails repeated use of a carrier board and an 
adhesive layer for vertically stacking a plurality of chips and mounting the stacked chips on a 
chip carrier.