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870 results about "Co-fired ceramic" patented technology

Co-fired ceramic devices are monolithic, ceramic microelectronic devices where the entire ceramic support structure and any conductive, resistive, and dielectric materials are fired in a kiln at the same time. Typical devices include capacitors, inductors, resistors, transformers, and hybrid circuits. The technology is also used for robust assembly and packaging of electronic components multi-layer packaging in the electronics industry, such as military electronics, MEMS, microprocessor and RF applications.

MEMS-based variable capacitor

A variable capacitor device using MEMS or micromachining techniques wherein thin-films of materials are deposited, patterned and etched to form movable micromechanical elements on the surface of a substrate composed of either semiconductor, glass, metal, or ceramic material. In one embodiment of the present invention to achieve higher frequency performance as well as other benefits, the substrate is comprised of Low-Temperature Co-Fired Ceramics (LTCC). The variable capacitor is an electrostatically actuated micromechanical device and if fabricated on a LTCC multi-layered substrate material has continuous electrical connections through the layers. The same LTCC substrate material can also be used to enclose the device by selectively removing a portion of the upper substrate so as to form a cavity. The two substrates are then bonded together to enclose and protect the variable capacitor. An integrated circuit can be incorporation onto the multi-level substrate structure to enable a electronic closed-loop controlled variable capacitor module. The integrated circuit is flip-chip bonded at the bottom of the substrate structure with appropriate electrical connections between the integrated circuit and the MEMS variable capacitor device. A variation of the present invention utilizes a zipper actuation method wherein the tuning ratio of the variable capacitor is increased to very high levels. Yet another variation of the present invention utilizes a differential gap between the top and bottom electrodes such that the actuation electrodes do not physically contact one another. Yet another implementation of the present invention uses an extra set of electrodes or mechanical mechanism so as to lock the value of the capacitor indefinitely. Yet another implementation uses shaped actuation electrodes so as to linearize the relationship between the applied actuation voltage and the resultant capacitance of the device.
Owner:FOR NAT RES INITIATIVES

Low profile active electronically scanned antenna (AESA) for ka-band radar systems

A vertically integrated Ka-band active electronically scanned antenna including, among other things, a transitioning RF waveguide relocator panel located behind a radiator faceplate and an array of beam control tiles respectively coupled to one of a plurality of transceiver modules via an RF manifold. Each of the beam control tiles includes a respective plurality of high power transmit/receive (T/R) cells as well as dielectric waveguides, RF stripline and coaxial transmission line elements. The waveguide relocator panel is preferably fabricated by a diffusion bonded copper laminate stack up with dielectric filling. The beam control tiles are preferably fabricated by the use of multiple layers of low temperature co-fired ceramic (LTCC) material laminated together. The waveguide relocator panel and the beam control tiles are designed to route RF signals to and from a respective transceiver module of four transceiver modules and a quadrature array of antenna radiators matched to free space formed in the faceplate. Planar type metal spring gaskets are provided between the interfacing layers so as to provide and ensure interconnection between mutually facing waveguide ports and to prevent RF leakage from around the perimeter of the waveguide ports. Cooling of the various components is achieved by a pair of planar forced air heat sink members which are located on either side of the array of beam control tiles. DC power and control of the T/R cells is provided by a printed circuit wiring board assembly located adjacent to the array of beam controlled tiles with solderless DC connections being provided by an arrangement of “fuzz button” electrical connector elements.
Owner:NORTHROP GRUMMAN SYST CORP

Universal type automatic loading and unloading system of bottom tool separation method based on conveyor belt

The invention discloses a universal type automatic loading and unloading system of a bottom tool separation method based on a conveyor belt, and relates to the technical field of loading and unloading devices and high temperature co-fired ceramic processing devices. The universal type automatic loading and unloading system comprises a bottom tray separation mechanism, a locating and material taking mechanism, a tray bottom collection mechanism, trays, a sensor and a controller which are sequentially arranged on a rack, wherein the bottom tray separation mechanism comprises a three-station jacking device and a tray clamping device; the locating and material taking mechanism comprises a double-station jacking and locating device and a loading and unloading mechanical hand; the tray bottom collection mechanism comprises a double-station jacking and clamping device; and the bottom tray separation mechanism, the locating and material taking mechanism, the tray bottom collection mechanism and the sensor are connected with the controller. Through the adoption of the system, the continuity of the processing process and flexibility of loading and unloading can be improved, the loading and unloading system is a modularized standard single machine and can be matched with processing devices of products and raw ceramics of various types, the integration level is high, the loading and unloading location accuracy is high, the takt is compact, and the universality is high.
Owner:THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP

LTCC (Low Temperature Co-fired Ceramic) lowpass filter

The invention discloses an LTCC (Low Temperature Co-fired Ceramic) lowpass filter which comprises an input end and an output end, wherein the input end is connected with input ends of the first pair of LC parallel harmonic oscillators (L2, C2), output ends of the first pair of LC parallel harmonic oscillators are connected with input ends of the second pair of LC parallel harmonic oscillators (L4, C4), output ends of the second pair of LC parallel harmonic oscillators are connected with input ends of the third pair of LC parallel harmonic oscillators (L6, C6), and output ends of the third pair of LC parallel harmonic oscillators are connected with the output end of the lowpass filter; parallel grounding capacitors C3 are arranged between connecting points of the first pair of LC parallel harmonic oscillators and the second pair of LC parallel harmonic oscillators and ground, parallel grounding capacitors C5 are arranged between connecting points of the second pair of LC parallel harmonic oscillators and the third pair of LC parallel harmonic oscillators and the ground, and parallel grounding capacitors C7 are arranged between connecting points of the third pair of LC parallel harmonic oscillators and the ground. The filter adopts a standard encapsulation structure, has the advantages of small volume, low cost, good frequency selecting property, good temperature stability and the like and is favorable to massive production.
Owner:西安瓷芯光电科技有限公司

Low-temperature sintering Ti-base microwave medium ceramic material and preparation thereof

The invention discloses a Ti-based microwave medium ceramics material by low-temperature sintering. The Ti-based microwave medium ceramics material takes rutile TiO2 as a main phase. The general formula of the prescription of the invention is that: (AxM2x)(NyTi1-y)1-3xO2, (BxM3x)(NyTi1-y)1-4xO2, (CxMx)(NyTi1-y)1-2xO2 or (1-m) TiO2-mBi2Ti4O11, wherein, the A is one of bivalent ions such as Zn<2+>, Cu<2+>, Ni<2+>, the B one of univalent ions such as Li<+>, the C one of trivalent ions such as Al<3+>, Fe<3+>, M is one of pentavalent ions such as Nb<5+>, Ta<5+>, Sb<5+>, N one of quadrivalent ions such as Zr< 4+ >, Sn< 4+ >, Mn< 4+ >; the X is more than or equal to 0 and less than or equal to 0.25, the Y more than or equal to 0 and less than or equal to 0.5, the m more than or equal to 0 and less than or equal to 0.15, the n is more than or equal to 0 and less than or equal to 2. The microwave medium ceramics material by low-temperature sintering has the advantages of high dielectric constant, low dielectric loss, wide covering range of temperature coefficient of resonant frequency, low sintering temperature, simple preparation technique and adjustable temperature coefficient of resonant frequency according to materials. The invention can be used for Low Temperature Co-fired Ceramics System (LTCC system) and used for producing microwave devices such as multi-media resonators, filters, etc.
Owner:XI AN JIAOTONG UNIV

LTCC lamination microstrip patch antenna

The invention discloses an LTCC-stacked microstrip patch antenna, pertains to the antenna technical field and relates to the LTCC (low temperature co-fired ceramic) technology, in particular to a low profile microstrip patch antenna applied to receiving radio. The microstrip patch antenna comprises three layers of LTCC substrates: the first layer of substrate is provided with a coaxial feeding hole, the upper surface thereof is a first radiation metal patch and the lower surface thereof is a reflection plate; the second layer of substrate is evenly provided with air holes; and the upper surface of the third layer of substrate is a second radiation metal patch. In addition, the microstrip patch antenna also comprises a coaxial feeding needle which is inserted into the coaxial feeding hole from the bottom to be connected with the first radiation metal patch on the first layer of substrate and be insulated with the reflection plate. The first, second and third layers of LTCC substrates form an integrity after passing through an LTCC stack and isostatic pressing technology from the bottom up and co-fire is carried out to the integrity at low temperature so as to form another integrity. The microstrip patch antenna can effectively widen the band width of a microstrip antenna, intensify the coupling between two radiation patches and improve the stability and reliability of the antenna.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Low profile active electronically scanned antenna (AESA) for Ka-band radar systems

A vertically integrated Ka-band active electronically scanned antenna including, among other things, a transitioning RF waveguide relocator panel located behind a radiator faceplate and an array of beam control tiles respectively coupled to one of a plurality of transceiver modules via an RF manifold. Each of the beam control tiles includes a respective plurality of high power transmit / receive (T / R) cells as well as dielectric waveguides, RF stripline and coaxial transmission line elements. The waveguide relocator panel is preferably fabricated by a diffusion bonded copper laminate stack up with dielectric filling. The beam control tiles are preferably fabricated by the use of multiple layers of low temperature co-fired ceramic (LTCC) material laminated together. The waveguide relocator panel and the beam control tiles are designed to route RF signals to and from a respective transceiver module of four transceiver modules and a quadrature array of antenna radiators matched to free space formed in the faceplate. Planar type metal spring gaskets are provided between the interfacing layers so as to provide and ensure interconnection between mutually facing waveguide ports and to prevent RF leakage from around the perimeter of the waveguide ports. Cooling of the various components is achieved by a pair of planar forced air heat sink members which are located on either side of the array of beam control tiles. DC power and control of the T / R cells is provided by a printed circuit wiring board assembly located adjacent to the array of beam controlled tiles with solderless DC connections being provided by an arrangement of “fuzz button” electrical connector elements.
Owner:NORTHROP GRUMMAN SYST CORP

77GHz millimeter wave radio frequency device and using method thereof

The invention provides a 77GHz millimeter wave radio frequency device and a using method thereof, and belongs to the technical field of millimeter wave radars. The 77GHz millimeter wave radio frequency device comprises a digital signal processor, a direct digital frequency synthesizer, an up-converter, a power amplifier, a buffer, a transmitting antenna, a receiving antenna, a low noise amplifier, a frequency mixer at a receiving terminal, a variable gain amplifier and a demodulating analog-to-digital converter. The 77GHz millimeter wave radio frequency device has the advantages that the 77GHz millimeter wave radio frequency device can be widely applied to millimeter wave range-and-speed measuring radar systems, and 77GHz is adopted as a working frequency band of a millimeter wave radar and combined with a phased-array antenna technology that low temperature co-fired ceramic (LTCC) is used as a substrate to manufacture each micro-strip patch antenna serving as an antenna unit; the direct digital frequency synthesizer is adopted and combined with an up-conversion technology to generate linear frequency modulated continuous waves; and a plurality of transmitter units are adopted andcombined with the phased-array antenna technology to realize horizontal scanning of millimeter wave beams.
Owner:苏州煜瑛微电子科技有限公司
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