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32results about How to "High temperature operation" patented technology
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Mis field effect transistor and method for manufacturing the same
InactiveUS20090321854A1Easy feedingImprove breakdown voltageSolid-state devicesSemiconductor/solid-state device manufacturingConductive materialsField-effect transistor
An MIS field effect transistor includes a nitride semiconductor multilayer structure including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type which is arranged on the first group III-V nitride semiconductor layer, and a third group III-V nitride semiconductor layer of the first conductivity type which is arranged on the second group III-V nitride semiconductor layer. A gate insulating film is formed on a wall surface ranging over the first, second and third group III-V nitride semiconductor layers so that the film stretches over the first, second and third group III-V nitride semiconductor layer. A gate electrode made of a conductive material is formed so that it faces the second group III-V nitride semiconductor layer via the gate insulating film. A drain electrode is provided to be electrically connected to the first group III-V nitride semiconductor layer, and a source electrode is provided to be electrically connected to the third group III-V nitride semiconductor layer.
Owner:ROHM CO LTD
Mis field effect transistor and method for manufacturing the same
ActiveUS20090278197A1Improve breakdown voltageReduced carrier mobilitySemiconductor/solid-state device manufacturingSemiconductor devicesConductive materialsField-effect transistor
The MIS field-effect transistor includes: a substrate; a nitride semiconductor multilayer structure portion formed on the substrate, including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type stacked thereon and a third group III-V nitride semiconductor layer of the first conductivity type stacked thereon; a gate insulating film formed on a wall surface formed over the first, second and third group III-V nitride semiconductor layers to extend over these first, second and third group III-V nitride semiconductor layers; a gate electrode made of a conductive material formed as being opposed to the second group III-V nitride semiconductor layer via the gate insulating film; a drawn portion electrically connected to the first group III-V nitride semiconductor layer and drawn from the nitride semiconductor multilayer structure portion in a direction parallel to the substrate; a drain electrode formed in contact with the drawn portion; and a source electrode electrically connected to the third group III-V nitride semiconductor layer.
Owner:ROHM CO LTD
Nitride semiconductor device and method for producing nitride semiconductor device
InactiveUS20080308908A1Total current dropImprove pressure resistanceSemiconductor/solid-state device manufacturingSemiconductor devicesDopantP type doping
A nitride semiconductor device of the present invention includes: a nitride semiconductor laminated structure comprising an n type first layer, a second layer containing a p type dopant laminated on the first layer, and an n type third layer laminated on the second layer, each layer of the nitride semiconductor laminated structure made of a group III nitride semiconductor, and the nitride semiconductor laminated structure formed with a first trench and a second trench, the first trench penetrating the second layer from the third layer and reaching at least the first layer, and the second trench having a side wall extending from the first, second, to third layers and being different from the first trench; a surface insulating film containing at least silicon nitride formed such that the surface insulating film covers the surface of the first trench; a gate insulating film formed on the side wall of the second trench such that the gate insulating film extends over the first, second, and third layers; and a gate electrode formed such that the gate electrode is opposed to the side wall of the second trench with the gate insulating film sandwiched between the gate electrode and the side wall.
Owner:ROHM CO LTD
Flexible secondary battery and method for manufacturing same
ActiveUS20170288255A1High-temperature operationImprove wettabilityFinal product manufactureElectrode carriers/collectorsElectrical batteryEngineering
Provided are a flexible secondary battery and a method of manufacturing the same. The method includes forming an electrode including a metal fiber-like current collector and an active material combined with the metal fiber-like current collector; and providing a liquid pre-electrolyte that may be either thermally polymerized or crosslinked to the electrode and applying heat thereto, such that the liquid pre-electrolyte is integrated with the electrode and forms a gelated or solidified polymer electrode.
Owner:JENAX
Fuse element and manufacturing method thereof
InactiveUS20090009281A1High currentHigh operating requirementsSemiconductor/solid-state device manufacturingEmergency protective device manufactureInsulation layerSurface roughness
A fuse element comprises a substrate having a top surface, a bottom surface opposite to said top surface, and side surfaces, a heat insulation layer including a first surface and a second surface opposite to said first surface, said first surface of said heat insulation layer disposed on said top surface of said substrate, and said second surface having a surface roughness, a protective layer disposed above said heat insulation layer, and a fuse layer disposed between said heat insulation layer and said protective layer.
Owner:CYNTEC
Nitride semiconductor device and method for producing nitride semiconductor device
InactiveUS20080203471A1Excellent power deviceReduced gate threshold voltageSemiconductor/solid-state device manufacturingSemiconductor devicesDislocationNitride semiconductors
The nitride semiconductor device includes: a nitride semiconductor structure comprising an n-type first layer, a p-type second layer, and an n-type third layer, the nitride semiconductor structure comprising a mesa structure having a lateral surface which forms a wall surface extending from the first, second, to third layers; a gate insulating film formed on the wall surface of the mesa structure; a gate electrode formed as facing the wall surface in the second layer; a drain electrode electrically connected to the first layer; and a source electrode electrically connected to the third layer, the nitride semiconductor structure having a high dislocation region and a low dislocation region arranged along a direction parallel to a principal surface of lamination of the nitride semiconductor structure, a dislocation density of the low dislocation region being lower than that of the high dislocation region, the mesa structure being formed in the low dislocation region.
Owner:ROHM CO LTD
Fast recovery diode
ActiveCN102054876AHigh temperature operationReduce doping concentrationSemiconductor/solid-state device manufacturingSemiconductor devicesContact layerPeak value
A fast recovery diode (1) is provided, which comprises a base layer (2) of a first conductivity type with a cathode side (23) and an anode side (24) opposite the cathode side (23). An anode buffer layer (41) of a second conductivity type with a first depth (410) and a first maximum doping concentration is arranged on the anode side (24). An anode contact layer (42) of the second conductivity type with a second depth (420), which is lower than the first depth (410), and a second maximum doping concentration, which is higher than the first maximum doping concentration, is also arranged on the anode side (24). A space charge region of the anode junction at breakdown voltage is located in a third depth (430) between the first and the second depth (410, 420). Between the second and the third depth (420, 430), there is a defect layer (43) with a defect peak arranged.
Owner:HITACHI ENERGY LTD
Vehicle, lightweight pneumatic pilot valve and related systems therefor
InactiveUS6951317B2Reliable wayTargeting and operationCosmonautic vehiclesDirection controllersSolenoid valveReciprocating motion
Owner:HONEYWELL INT INC
Zeolite membrane and methods of making the same
InactiveUS20120135215A1Prevent thermal degradationShorten the timeMembranesSemi-permeable membranesSlurryOrganic chemistry
A free-standing zeolite membrane and a zeolite membrane supported on a support structure are disclosed. The free-standing zeolite membrane is fabricated by mixing zeolite particles and an optional inorganic binder, forming a green body, and sintering the green body at a sufficiently low temperature so as to prevent damage to the gas selectivity properties of the zeolite particles. The supported composite zeolite membrane is fabricated by mixing a sacrificial binder, an optional inorganic binder, boehmite sol and zeolite particles to form a slurry. The slurry is then coated onto a porous support structure, dried and sintered at a sufficiently low temperature so as to prevent damage to the gas selective properties of the zeolite particles. In both membranes, the zeolite particles span the entire thickness of the membrane to provide a high selectivity path for the flow of gas to pass therethrough.
Owner:GENERAL ELECTRIC CO
MIS field effect transistor and method for manufacturing the same
ActiveUS7999286B2Easy feedingImprove breakdown voltageSemiconductor/solid-state device manufacturingSemiconductor devicesConductive materialsField-effect transistor
The MIS field-effect transistor includes: a substrate; a nitride semiconductor multilayer structure portion formed on the substrate, including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type stacked thereon and a third group III-V nitride semiconductor layer of the first conductivity type stacked thereon; a gate insulating film formed on a wall surface formed over the first, second and third group III-V nitride semiconductor layers to extend over these first, second and third group III-V nitride semiconductor layers; a gate electrode made of a conductive material formed as being opposed to the second group III-V nitride semiconductor layer via the gate insulating film; a drawn portion electrically connected to the first group III-V nitride semiconductor layer and drawn from the nitride semiconductor multilayer structure portion in a direction parallel to the substrate; a drain electrode formed in contact with the drawn portion; and a source electrode electrically connected to the third group III-V nitride semiconductor layer.
Owner:ROHM CO LTD
Position sensing head with redundancy
ActiveUS8692541B2No degradation of accuracy of signalHigh-temperature operationResistance/reactance/impedenceUsing electrical meansSignal conditioning circuitsEngineering
A position sensing head combines a sensing element and a simplified electronic module to enable operation with one wire, in addition to a circuit common, for providing power and transmitting a signal, while separating the sensing head from signal conditioning circuits by over 10 meters. The simplicity of the electronic module allows the use of basic electronic components that operate at more than 225° C. The signal is a variable frequency impressed onto the one wire, which can be read by a frequency meter. Another signal, such as a position or temperature, can be impressed onto the one wire at the same time as the first signal. The second signal is of a different frequency range so that it will not interfere with the first. A demodulator circuit can separate the two signals. The sensing element construction allows for locating up to three active elements measuring the same target.
Owner:NYCE DAVID SCOTT +1
Quantum cascade laser
ActiveUS20140355637A1Increase resistanceLow absorption coefficientLaser detailsLaser optical resonator constructionQuantum cascade laserWaveguide
A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction.
Owner:SUMITOMO ELECTRIC IND LTD
Preparation method of oligomer-polymer and lithium battery
ActiveUS20150086849A1Good and stable capacity and battery efficiency and charge-discharge cycle lifeHigh temperature operationOrganic chemistryFinal product manufactureBarbituric acidOligomer
A preparation method of an oligomer-polymer is provided. A maleimide is reacted with a barbituric acid to form a first oligomer-polymer. The first oligomer-polymer is then reacted with a phenylsiloxane oligomer to form a second oligomer-polymer. The phenylsiloxane oligomer is a compound represented by formula 1:Ph-Si(OH)xOy formula 1,wherein x is 0.65 to 2.82 and y is 0.09 to 1.17.
Owner:NAT TAIWAN UNIV OF SCI & TECH +1
Technology for recovering bromine element from mother liquor extract of oxidation process of terephthalic acid production device
ActiveCN111217333AAffect activityIncrease running consumptionHydrogen bromideOrganic compound preparationEthylic acidIonized sodium
The invention provides a technology for recovering bromine element from mother liquor extract of an oxidation process of a terephthalic acid production device, and belongs to the field of process recovery. The mother liquor extract of the oxidation process of the terephthalic acid production device mainly contains acetic acid according to the material content, and acetic acid is used as a solventto dissolve cobalt ions, manganese ions, bromide ions, BA, sodium ions, iron ions, 4-CBA, PT acid and the like with relatively low concentrations. The bromine element is extracted by using the technology to achieve recovery in a form of hydrobromic acid or sodium bromide, and the economic value of the bromine element is recovered; and the situation that in the prior art, bromine is discharged intosewage, the bromine element can cause adverse effects on biological florae of a sewage treatment unit, and the activity of the biological florae is affected is also avoided.
Owner:佰仕邦水处理环保科技(大连)有限公司
Power semiconductor module and method for manufacturing the same
InactiveUS20170062317A1Improve reliabilityImproved heat radiation characteristicSemiconductor/solid-state device detailsSolid-state devicesPower semiconductor deviceAdhesive
A power semiconductor module is provided. The power semiconductor module includes a lower substrate and a first electronic device bonded to a surface of the lower substrate. A lead frame has a first side surface bonded to a surface of the first electronic device by a first adhesive, and a second electronic device bonded to a second side surface of the lead frame by the first adhesive. An upper substrate is bonded to a surface of the second electronic device.
Owner:HYUNDAI MOTOR CO LTD +2
High temperature laser diode
InactiveUS20050100066A1Reduce power consumptionIncrease temperatureOptical wave guidanceLaser detailsConduction bandElectron confinement
A semiconductor laser structure having confinement layers to confine electrons to an active region (quantum wells) and having separate antimonide-based cladding layers to provide additional electron confinement and photon confinement is suited to high temperature operation. The structure is suitable for lasing across telecommunications wavelengths from 980 nm to 1.55 μm (microns). The cladding layer uses AlAsSb which can be lattice-matched to InP and can be used to achieve large conduction band offsets. It is very useful for coolerless (without thermo-electric cooler) operation.
Owner:NORTEL NETWORKS UK
Vehicle, lightweight pneumatic pilot valve and related systems therefor
InactiveUS20040041058A1Targeting and operationReliable wayCosmonautic vehiclesDirection controllersSolenoid valveReciprocating motion
A vehicle, such as a missile, with a pilot valve system controls the vehicle's thrust valves despite a hostile propellant gas environment. The pilot valve system can have one or more pilot valves. Using refractory elements, the pilot valve ball reciprocates between a supply seat and a vent seat which is subject to the filtered inflow of propellant thrust gases. When open, the pilot valve allows the stray thrust gas to communicate to a control chamber which closes a poppet against a valve seat in the nozzle. When an associated solenoid closes the pilot valve by pushing the pilot valve ball against the supply seat, the control chamber is vented to ambient. The poppet may then travel into the cylinder bore and the nozzle is opened to exhaust propellant gases and exert lateral thrust on the vehicle. Certain nozzle thrust geometries provide useful vehicle guidance.
Owner:HONEYWELL INT INC
Optically controlled electrical switching device based on wide bandgap semiconductors
InactiveUS8013359B2Improve efficiencyHigh-temperature operationMaterial nanotechnologyNanoinformaticsElectricityPower switching
Owner:PETTIT JOHN W
High temperature composite projectile barrel
InactiveUS20160209143A1High temperature operationFacilitate heat conductionBarrelsAluminiumPolymer chemistry
A composite projectile barrel is disclosed comprising a polymer matrix composite outer shell that accommodates higher temperature loading. In one embodiment, the invention comprises an outer shell fabricated from carbon fibers and polyimide resin having a glass transition temperature greater than 500° F. In another embodiment, the resin mixture includes a plurality of sizes of aluminum particles, between about 0.1 microns and 10.0 microns in diameter and of approximately spherical shape, as a thermal conductive additive.
Owner:PROOF RES
Multi-coated anodized wire and method of making same
Owner:FORD GLOBAL TECH LLC
Position sensing head with redundancy
ActiveUS20130088243A1No degradation of accuracyHigh temperature operationResistance/reactance/impedenceConverting sensor outputFrequency meterElectronic modules
A position sensing head combines a sensing element and a simplified electronic module to enable operation with one wire, in addition to a circuit common, for providing power and transmitting a signal, while separating the sensing head from signal conditioning circuits by over 10 meters. The simplicity of the electronic module allows the use of basic electronic components that operate at more than 225° C. The signal is a variable frequency impressed onto the one wire, which can be read by a frequency meter. Another signal, such as a position or temperature, can be impressed onto the one wire at the same time as the first signal. The second signal is of a different frequency range so that it will not interfere with the first. A demodulator circuit can separate the two signals. The sensing element construction allows for locating up to three active elements measuring the same target.
Owner:NYCE DAVID SCOTT +1
Method and molten salt electrolytic cell for implementing a hydrogen fuel, sustainable, closed clean energy cycle on a large scale
ActiveUS20190348698A1Safe and reliable and cost-effectiveReduce production efficiency and product yieldElectrolysis componentsReactant parameters controlChemical reactionClean energy
A hydrogen fuel, sustainable, closed clean energy cycle based on green chemistry is presented for large scale implementation using a cost effective electrolytic cell. A chemical reaction between salinated (sea) or desalinated (fresh) water (H2O) and sodium (Na) metal produces hydrogen (H2) fuel and sodium hydroxide (NaOH) byproduct. The NaOH is reprocessed in a solar powered electrolytic Na metal production plant that can result in excess chlorine (Cl2) from sodium chloride (NaCl) in sea salt mixed with NaOH, used to effect freezing point lowering of seawater reactant for hydrogen generation at reduced temperatures. The method and molten salt electrolytic cell enable natural separation of NaCl from NaOH, thereby limiting excess Cl2 production. The recovered NaCl is used to produce concentrated brine solution from seawater for hydrogen generation in cold climates, or becomes converted to sodium carbonate (Na2CO3) via the Solvay process for electrolytic production of Na metal without Cl2 generation.
Owner:STERN ALVIN GABRIEL
Flexible secondary battery and method for manufacturing same
ActiveUS10497963B2Fast formingHigh-temperature operationFinal product manufactureElectrode carriers/collectorsElectrical batteryEngineering
Provided are a flexible secondary battery and a method of manufacturing the same. The method includes forming an electrode including a metal fiber-like current collector and an active material combined with the metal fiber-like current collector; and providing a liquid pre-electrolyte that may be either thermally polymerized or crosslinked to the electrode and applying heat thereto, such that the liquid pre-electrolyte is integrated with the electrode and forms a gelated or solidified polymer electrode.
Owner:JENAX
Electrolyte Additive and Electrolyte for Lithium Secondary Battery Including the Same
ActiveUS20190296397A1Easy dischargeSuppress amount of gasGroup 3/13 element organic compoundsLi-accumulatorsHigh temperature storageHigh rate
An electrolyte additive composition of the present invention may improve high-rate charge and discharge characteristics and high-temperature storage and life characteristics of a lithium secondary battery when the electrolyte additive composition is used in an electrolyte while including a novel borate-based lithium compound as well as a nitrile-based compound.
Owner:LG ENERGY SOLUTION LTD
Lube oil solvent refining performance evaluation device
The invention provides a lube oil solvent refining performance evaluation device including an extraction tower, a thermostat, a raffinate stripper, an extract stripper, a steam generator and a solvent recovery tank, the extraction tower is arranged in the thermostat, the front face of thermostat is provided with a visible window, an electrical heating element is arranged in the thermostat, the electric heating element and a temperature controller are connected in an electric connection mode, the upper part of the extraction tower is connected with a solvent inlet pipe and a raffinate outlet pipe, the lower part of the extraction tower is connected with a raw material inlet pipe and an extract outlet pipe, the extraction tower is connected with the raffinate stripper by the raffinate outlet pipe, the extraction tower is connected with the extract stripper by the extract outlet pipe, and the raffinate stripper and a solvent outlet of the upper part of the extract stripper are connected with the solvent recovery tank by pipelines. The lube oil solvent refining performance evaluation device has the advantages of reasonable structure and convenient maintenance and operation, and can evaluate lube oil solvent refining performances under the accurate agent and oil ratio and operating conditions.
Owner:CHINA PETROLEUM & CHEM CORP +1
Method and molten salt electrolytic cell for implementing a hydrogen fuel, sustainable, closed clean energy cycle on a large scale
ActiveUS10818951B2Safe and reliable and cost-effectiveReduce production efficiency and product yieldElectrolysis componentsReactant parameters controlChemical reactionSea salt
A hydrogen fuel, sustainable, closed clean energy cycle based on green chemistry is presented for large scale implementation using a cost effective electrolytic cell. A chemical reaction between salinated (sea) or desalinated (fresh) water (H2O) and sodium (Na) metal produces hydrogen (H2) fuel and sodium hydroxide (NaOH) byproduct. The NaOH is reprocessed in a solar powered electrolytic Na metal production plant that can result in excess chlorine (Cl2) from sodium chloride (NaCl) in sea salt mixed with NaOH, used to effect freezing point lowering of seawater reactant for hydrogen generation at reduced temperatures. The method and molten salt electrolytic cell enable natural separation of NaCl from NaOH, thereby limiting excess Cl2 production. The recovered NaCl is used to produce concentrated brine solution from seawater for hydrogen generation in cold climates, or becomes converted to sodium carbonate (Na2CO3) via the Solvay process for electrolytic production of Na metal without Cl2 generation.
Owner:STERN ALVIN GABRIEL
Intelligent flue gas and air control system of household garbage incineration equipment
ActiveCN113375169AHigh temperature operationGuaranteed uptimeIndirect carbon-dioxide mitigationBlast-producing apparatusCombustion chamberFlue gas
The invention discloses an intelligent flue gas and air control system of household garbage incineration equipment, and discloses the intelligent flue gas and air control system of a household garbage incinerator. The intelligent flue gas and air control system comprises the incinerator, an oxygen supply fan, oxygen supply pipeline systems, a temperature detection instrument, a flue gas oxygen content detection instrument, a negative pressure instrument, a negative pressure fan, a primary air distributor, a secondary air distributor, a flow indicator, a pipeline, a flow control valve, a CO detector, an in-furnace material weight feedback instrument, a secondary combustion chamber, a signal transmission system and a terminal control system. The incinerator is connected with the oxygen supply fan through the primary air distributor, the secondary air distributor and the oxygen supply pipeline systems, the temperature detection instrument is located in an air chamber area corresponding to the oxygen supply pipeline system, the flue gas oxygen content detection instrument, the negative pressure instrument and the CO detector are respectively arranged at a flue gas outlet of the incinerator and a flue gas outlet of the secondary combustion chamber, and the negative pressure fan is positioned at the upper end of the secondary combustion chamber. The flow indicator and the flow control valve are arranged on the oxygen supply pipeline systems correspondingly, and the in-furnace material weight feedback instrument is positioned below the incinerator.
Owner:BEIJING G&T ENVIRONMENTAL PROTECTION SCI & TECH
Diffusion bonding of piezoelectric crystal to metal wear plate
PendingUS20220173305A1High-temperature operationWithstands thermal cyclingPiezoelectric/electrostrictive device manufacture/assemblyMaterial analysis using sonic/ultrasonic/infrasonic wavesLead zirconate titanateUltrasonic sensor
The disclosed method of diffusion bonding of a lead zirconate titanate piezoelectric crystal to a metal wear plate, for the fabrication of an ultrasonic transducer operable at high temperatures and able to withstand repeated thermal cycling, comprises depositing noble metal coatings on both bonding surfaces, bringing the surfaces into contact, and heating under pressure at a temperature ranging from 270 to 400° C.
Owner:SEC
Lube oil solvent refining performance evaluation device
Owner:CHINA PETROLEUM & CHEM CORP +1
Power semiconductor device
InactiveUS8901569B2Reduce the possibilityImprove reliabilitySemiconductor/solid-state device detailsSolid-state devicesPower semiconductor deviceEngineering
Provided is a power semiconductor device comprising a bonding joint that, even under a temperature environment of 150° C. or greater enabling operation of a wide bandgap semiconductor, reduces cracking-destruction occurring owing to thermal cycle while conductively connecting an electrode, connection terminal, and semiconductor device substrate.It is a power semiconductor device capable of operating under a temperature of 150° C. or greater having an electrode laminated on a wide bandgap semiconductor substrate and a connection terminal joined to the electrode for connection to external wiring, which power semiconductor device is characterized in that difference among the three coefficients of linear expansion of the electrode, a core of the connection terminal, and the semiconductor device substrate is 5.2×10−6 / K at maximum, and that it comprises a joint that directly joins the connection terminal and the electrode.
Owner:RESONAC HOLDINGS CORPORATION
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