31results about How to "High-temperature operation" patented technology

The MIS field-effect transistor includes: a substrate; a nitride semiconductor multilayer structure portion formed on the substrate, including a first group III-V nitride semiconductor layer of a first conductivity type, a second group III-V nitride semiconductor layer of a second conductivity type stacked thereon and a third group III-V nitride semiconductor layer of the first conductivity type stacked thereon; a gate insulating film formed on a wall surface formed over the first, second and third group III-V nitride semiconductor layers to extend over these first, second and third group III-V nitride semiconductor layers; a gate electrode made of a conductive material formed as being opposed to the second group III-V nitride semiconductor layer via the gate insulating film; a drawn portion electrically connected to the first group III-V nitride semiconductor layer and drawn from the nitride semiconductor multilayer structure portion in a direction parallel to the substrate; a drain electrode formed in contact with the drawn portion; and a source electrode electrically connected to the third group III-V nitride semiconductor layer.

A nitride semiconductor device of the present invention includes: a nitride semiconductor laminated structure comprising an n type first layer, a second layer containing a p type dopant laminated on the first layer, and an n type third layer laminated on the second layer, each layer of the nitride semiconductor laminated structure made of a group III nitride semiconductor, and the nitride semiconductor laminated structure formed with a first trench and a second trench, the first trench penetrating the second layer from the third layer and reaching at least the first layer, and the second trench having a side wall extending from the first, second, to third layers and being different from the first trench; a surface insulating film containing at least silicon nitride formed such that the surface insulating film covers the surface of the first trench; a gate insulating film formed on the side wall of the second trench such that the gate insulating film extends over the first, second, and third layers; and a gate electrode formed such that the gate electrode is opposed to the side wall of the second trench with the gate insulating film sandwiched between the gate electrode and the side wall.

Provided are a flexible secondary battery and a method of manufacturing the same. The method includes forming an electrode including a metal fiber-like current collector and an active material combined with the metal fiber-like current collector; and providing a liquid pre-electrolyte that may be either thermally polymerized or crosslinked to the electrode and applying heat thereto, such that the liquid pre-electrolyte is integrated with the electrode and forms a gelated or solidified polymer electrode.

A fuse element comprises a substrate having a top surface, a bottom surface opposite to said top surface, and side surfaces, a heat insulation layer including a first surface and a second surface opposite to said first surface, said first surface of said heat insulation layer disposed on said top surface of said substrate, and said second surface having a surface roughness, a protective layer disposed above said heat insulation layer, and a fuse layer disposed between said heat insulation layer and said protective layer.

The nitride semiconductor device includes: a nitride semiconductor structure comprising an n-type first layer, a p-type second layer, and an n-type third layer, the nitride semiconductor structure comprising a mesa structure having a lateral surface which forms a wall surface extending from the first, second, to third layers; a gate insulating film formed on the wall surface of the mesa structure; a gate electrode formed as facing the wall surface in the second layer; a drain electrode electrically connected to the first layer; and a source electrode electrically connected to the third layer, the nitride semiconductor structure having a high dislocation region and a low dislocation region arranged along a direction parallel to a principal surface of lamination of the nitride semiconductor structure, a dislocation density of the low dislocation region being lower than that of the high dislocation region, the mesa structure being formed in the low dislocation region.

A free-standing zeolite membrane and a zeolite membrane supported on a support structure are disclosed. The free-standing zeolite membrane is fabricated by mixing zeolite particles and an optional inorganic binder, forming a green body, and sintering the green body at a sufficiently low temperature so as to prevent damage to the gas selectivity properties of the zeolite particles. The supported composite zeolite membrane is fabricated by mixing a sacrificial binder, an optional inorganic binder, boehmite sol and zeolite particles to form a slurry. The slurry is then coated onto a porous support structure, dried and sintered at a sufficiently low temperature so as to prevent damage to the gas selective properties of the zeolite particles. In both membranes, the zeolite particles span the entire thickness of the membrane to provide a high selectivity path for the flow of gas to pass therethrough.

A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction.

A preparation method of an oligomer-polymer is provided. A maleimide is reacted with a barbituric acid to form a first oligomer-polymer. The first oligomer-polymer is then reacted with a phenylsiloxane oligomer to form a second oligomer-polymer. The phenylsiloxane oligomer is a compound represented by formula 1:

Ph-Si(OH)_xO_y   formula 1,

wherein x is 0.65 to 2.82 and y is 0.09 to 1.17.

The invention provides a technology for recovering bromine element from mother liquor extract of an oxidation process of a terephthalic acid production device, and belongs to the field of process recovery. The mother liquor extract of the oxidation process of the terephthalic acid production device mainly contains acetic acid according to the material content, and acetic acid is used as a solventto dissolve cobalt ions, manganese ions, bromide ions, BA, sodium ions, iron ions, 4-CBA, PT acid and the like with relatively low concentrations. The bromine element is extracted by using the technology to achieve recovery in a form of hydrobromic acid or sodium bromide, and the economic value of the bromine element is recovered; and the situation that in the prior art, bromine is discharged intosewage, the bromine element can cause adverse effects on biological florae of a sewage treatment unit, and the activity of the biological florae is affected is also avoided.

A power semiconductor module is provided. The power semiconductor module includes a lower substrate and a first electronic device bonded to a surface of the lower substrate. A lead frame has a first side surface bonded to a surface of the first electronic device by a first adhesive, and a second electronic device bonded to a second side surface of the lead frame by the first adhesive. An upper substrate is bonded to a surface of the second electronic device.

A semiconductor laser structure having confinement layers to confine electrons to an active region (quantum wells) and having separate antimonide-based cladding layers to provide additional electron confinement and photon confinement is suited to high temperature operation. The structure is suitable for lasing across telecommunications wavelengths from 980 nm to 1.55 μm (microns). The cladding layer uses AlAsSb which can be lattice-matched to InP and can be used to achieve large conduction band offsets. It is very useful for coolerless (without thermo-electric cooler) operation.

A composite projectile barrel is disclosed comprising a polymer matrix composite outer shell that accommodates higher temperature loading. In one embodiment, the invention comprises an outer shell fabricated from carbon fibers and polyimide resin having a glass transition temperature greater than 500° F. In another embodiment, the resin mixture includes a plurality of sizes of aluminum particles, between about 0.1 microns and 10.0 microns in diameter and of approximately spherical shape, as a thermal conductive additive.

A position sensing head combines a sensing element and a simplified electronic module to enable operation with one wire, in addition to a circuit common, for providing power and transmitting a signal, while separating the sensing head from signal conditioning circuits by over 10 meters. The simplicity of the electronic module allows the use of basic electronic components that operate at more than 225° C. The signal is a variable frequency impressed onto the one wire, which can be read by a frequency meter. Another signal, such as a position or temperature, can be impressed onto the one wire at the same time as the first signal. The second signal is of a different frequency range so that it will not interfere with the first. A demodulator circuit can separate the two signals. The sensing element construction allows for locating up to three active elements measuring the same target.

A hydrogen fuel, sustainable, closed clean energy cycle based on green chemistry is presented for large scale implementation using a cost effective electrolytic cell. A chemical reaction between salinated (sea) or desalinated (fresh) water (H₂O) and sodium (Na) metal produces hydrogen (H₂) fuel and sodium hydroxide (NaOH) byproduct. The NaOH is reprocessed in a solar powered electrolytic Na metal production plant that can result in excess chlorine (Cl₂) from sodium chloride (NaCl) in sea salt mixed with NaOH, used to effect freezing point lowering of seawater reactant for hydrogen generation at reduced temperatures. The method and molten salt electrolytic cell enable natural separation of NaCl from NaOH, thereby limiting excess Cl₂ production. The recovered NaCl is used to produce concentrated brine solution from seawater for hydrogen generation in cold climates, or becomes converted to sodium carbonate (Na₂CO₃) via the Solvay process for electrolytic production of Na metal without Cl₂ generation.

An electrolyte additive composition of the present invention may improve high-rate charge and discharge characteristics and high-temperature storage and life characteristics of a lithium secondary battery when the electrolyte additive composition is used in an electrolyte while including a novel borate-based lithium compound as well as a nitrile-based compound.

The invention provides a lube oil solvent refining performance evaluation device including an extraction tower, a thermostat, a raffinate stripper, an extract stripper, a steam generator and a solvent recovery tank, the extraction tower is arranged in the thermostat, the front face of thermostat is provided with a visible window, an electrical heating element is arranged in the thermostat, the electric heating element and a temperature controller are connected in an electric connection mode, the upper part of the extraction tower is connected with a solvent inlet pipe and a raffinate outlet pipe, the lower part of the extraction tower is connected with a raw material inlet pipe and an extract outlet pipe, the extraction tower is connected with the raffinate stripper by the raffinate outlet pipe, the extraction tower is connected with the extract stripper by the extract outlet pipe, and the raffinate stripper and a solvent outlet of the upper part of the extract stripper are connected with the solvent recovery tank by pipelines. The lube oil solvent refining performance evaluation device has the advantages of reasonable structure and convenient maintenance and operation, and can evaluate lube oil solvent refining performances under the accurate agent and oil ratio and operating conditions.

The invention discloses an intelligent flue gas and air control system of household garbage incineration equipment, and discloses the intelligent flue gas and air control system of a household garbage incinerator. The intelligent flue gas and air control system comprises the incinerator, an oxygen supply fan, oxygen supply pipeline systems, a temperature detection instrument, a flue gas oxygen content detection instrument, a negative pressure instrument, a negative pressure fan, a primary air distributor, a secondary air distributor, a flow indicator, a pipeline, a flow control valve, a CO detector, an in-furnace material weight feedback instrument, a secondary combustion chamber, a signal transmission system and a terminal control system. The incinerator is connected with the oxygen supply fan through the primary air distributor, the secondary air distributor and the oxygen supply pipeline systems, the temperature detection instrument is located in an air chamber area corresponding to the oxygen supply pipeline system, the flue gas oxygen content detection instrument, the negative pressure instrument and the CO detector are respectively arranged at a flue gas outlet of the incinerator and a flue gas outlet of the secondary combustion chamber, and the negative pressure fan is positioned at the upper end of the secondary combustion chamber. The flow indicator and the flow control valve are arranged on the oxygen supply pipeline systems correspondingly, and the in-furnace material weight feedback instrument is positioned below the incinerator.

The disclosed method of diffusion bonding of a lead zirconate titanate piezoelectric crystal to a metal wear plate, for the fabrication of an ultrasonic transducer operable at high temperatures and able to withstand repeated thermal cycling, comprises depositing noble metal coatings on both bonding surfaces, bringing the surfaces into contact, and heating under pressure at a temperature ranging from 270 to 400° C.