Fast recovery diode

Abstract

A fast recovery diode (1) is provided, which comprises a base layer (2) of a first conductivity type with a cathode side (23) and an anode side (24) opposite the cathode side (23). An anode buffer layer (41) of a second conductivity type with a first depth (410) and a first maximum doping concentration is arranged on the anode side (24). An anode contact layer (42) of the second conductivity type with a second depth (420), which is lower than the first depth (410), and a second maximum doping concentration, which is higher than the first maximum doping concentration, is also arranged on the anode side (24). A space charge region of the anode junction at breakdown voltage is located in a third depth (430) between the first and the second depth (410, 420). Between the second and the third depth (420, 430), there is a defect layer (43) with a defect peak arranged.

Description

Technical field

[0001] The present invention relates to the field of power electronic devices, and more particularly to fast recovery diodes and methods for manufacturing such fast recovery diodes. Background technique

[0002] As shown in FIG. 1, the prior art diode 10 includes an n-doped base layer 2 having a cathode side 23 and an anode side 24 on the opposite side of the cathode side 23. On the anode side 24, a p-doped anode layer 25 is provided and on top of the p-doped anode layer 25, a metal layer that functions as the anode electrode 4 is provided. On the cathode side 23, a higher (n+) doped cathode buffer layer 22 is provided. A metal layer in the form of the cathode electrode 3 is provided on top of this (n+) doped cathode buffer layer 22. On the anode side 24, there is a defect center (typically formed by hydrogen or helium irradiation) disposed near the junction in the p-doped anode layer 25. Due to the defective layer 45, the reverse recovery current is reduced an...

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