563 results about "Lead zirconate titanate" patented technology

An integrated circuit structures formed by chemical mechanical polishing (CMP) process, which comprises a conductive pathway recessed in a dielectric substrate, wherein the conductive pathway comprises conductive transmission lines encapsulated in a transmission-enhancement material, and wherein the conductive pathway is filled sequentially by a first layer of the transmission-enhancement material followed by the conductive transmission line; a second layer of transmission-enhancement material encapsulating the conductive transmission line and contacting the first layer of the transmission-enhancement material, wherein the transmission-enhancement material is selected from the group consisting of high magnetic permeability material and high permittivity material. Such integrated circuit structure may comprise a device structure selected from the group consisting of capacitors, inductors, and resistors. Preferably, the transmission-enhancement material comprises MgMn ferrites, MgMnAl ferrites, barium strontium titanate, lead zirconium titanate, titanium oxide, tantalum oxide, etc.

A three-dimensional biomedical device having an osteoinductive first area with a controlled porosity and a second area, which is produced by laser technology from a powder including one of ceramics, metals, metal alloys, bioactive glasses, lead zirconate titanate and biocompatible polymers, or mixtures thereof. The ratio of the porosities from the second area to the first area is equal or less than one, preferably from 0.001 to 0.9. A method for manufacturing the device for fitting in a bone defect, wherein a virtual object is designed with a computer-aid designed software, and the device is manufactured by laser technology including layering a powder onto a plate (7) so that a layer of a predetermined thickness is formed; the laser beam (8) selectively processes the powder to produce a processed layer, and, thus, layer after layer, the layers are joined together until the biomedical device is formed.

An ultrasonograph, an ultrasonic transducer, an inspection device, and an ultrasonic imaging device enabling easy and quick inspection and high-resolution or high-speed processing are provided. Barium titanate (BaTiO₃) or lead zirconate titanate (PZT) is used for a piezoelectric material constituting the ultrasonic transducer, and the thickness thereof is 0.1 μm to 100 μm. Included therein are a drive section capable of driving an arbitrary one of piezoelectric layers, a detecting section detecting electrical signals generated by the plural piezoelectric layers based on echoes from an inspection object, the echoes being originated from an ultrasonic wave generated by the driven piezoelectric layer, and a processing section performing processing for visualizing a state of the inspection object based on the detected electrical signals.

The invention discloses a one-phase ferroelectric film capable of regulating effective resistance by ferroelectric polarization, a preparing method of the one-phase ferroelectric film and an effective resistance regulation mode. The one-phase ferroelectric film comprises B-bit-doped Bal-xSrxTil-yByO3, Pb(Fe1-yBy)O3, Pb(Co1-yBy)O3, (Pb1-xAx)(ZryTi1-y)O3, A-bit-doped Y1-xAxMnO3, Bil-xAxFeO3, and Bi4-xAxTi3O12. The one-phase ferroelectric film is prepared by using film preparing methods, such as pulsed laser deposition (PLD), laser molecular beam epitaxy (LMBE) and magnetron sputtering. The prepared ferroelectric film is 0.4-1000 nanometer in the thickness and has larger conductance and leakage current, as well as ferroelectricity and semiconductor performance. The invention provides a method for improving the antifatigue performance of the one-phase ferroelectric film. Turning frequency (x) of the ferroelectric polarization in the method can be increased to 102-1010; and the ferroelectric polarization is turned to regulate the effective resistance of the one-phase ferroelectric film.

The present invention generally relates to nanotechnology and submicroelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other nanostructure having a region that is electrically-polarizable, for example, a nanoscale wire may comprise a core and an electrically-polarizable shell. In some cases, the electrically-polarizable region is able to retain its polarization state in the absence of an external electric field. All, or only a portion, of the electricallypolarizable region may be polarized, for example, to encode one or more bits of data. In one set of embodiments, the electrically-polarizable region comprises a functional oxide or a ferroelectric oxide material, for example, BaTiO₃, lead zirconium titanate, or the like. In some embodiments, the nanoscale wire (or other nanostructure) may further comprise other materials, for example, a separation region separating the electricallypolarizable region from other regions of the nanoscale wire. For example, in a nanoscale wire, one or more intermediate shells may separate the core from the electricallypolarizable shell.

A lead content in a piezoelectric thin film (3) of a piezoelectric element (20) is made smaller as compared to stoichiometric composition. More specifically, the piezoelectric thin film (3) is made of lead zirconate titanate expressed as Pb_(1−x)(Zr_(1−s)Ti_s)O₃(0<s<1) or lead-zirconate-titanate-based oxide expressed as (Pb_(1−x−y)A_y)(Zr_(1−t)Ti_sB_t)O₃(0<s<1, 0<t<1−s) where A is a substitutive metal ion in an A-site in the perovskite crystalline structure and B is a substitutive metal ion in a B-site in the perovskite crystalline structure. The value of x, which indicates a deficiency in Pb content in each composition, is more than 0 but not more than 0.15.

An arrangement that converts mechanical energy into electrical energy employs a base member and a cantilever member coupled thereto. The cantilever member has two piezoelectric layers with an air space therebetween. A proof mass is coupled to the cantilever member distal from the base member. The first and second piezoelectric layers are formed of lead zirconate titanate (PZT), and the output voltage of the cantilever member is proportional to the height of the air gap. A piezoresistive accelerometer that is useful for measuring mechanical vibration has a suspension beam and a piezoresistive layer be separated from the suspension beam. A method of monitoring an acoustic vibration utilizes a piezoresistive element having an air-spaced cantilever formed of a piezoelectric material in the vicinity of the system to be monitored and obtains an alternating voltage form the air-spaced cantilever of the piezoresistive element.

The invention relates to a 2-2 type ferroelectrics-ferrite multilayer composite magnetoelectric material and the preparation method, which relates to a ferroelectrics-ferrite multilayer composite magnetoelectric material. The invention consists of a ferroelectrics and a ferrite, the ferroelectrics and the ferrite materials are composed by adopting a layered alternate arrangement mode, wherein, the ferroelectrics material selects a lead zirconate titanate PbZr0.52Ti0.48O3 ceramics, and the ferrite selects a cobalt ferrite CoFe2O4 ferrite ceramics. An organic solvent, a plasticizer, a dispersant and a bonding agent are added in PZT powder and are ball milled and mixed to obtain a paste; the paste is treated with screening, defoaming and doctor blade casting to obtain an electrolyte thin film green, demoulding and cutting are carried out; the organic solvent, the plasticizer, the dispersant and the bonding agent are added in CFO powder and are ball milled and mixed to obtain the paste; the paste is treated with screening, defoaming and doctor blade casting to obtain the electrolyte thin film green, the demoulding and cutting are carried out; the PZT green and the CFO green are overlapped alternatively, a multi-layer composite green material is obtained by heating and pressurizing, roasting and hydrostatic pressure processing are carried out, and then sintering and molding are carried out for preparation.

The invention provides a method for preparing a piezoelectric-ferroelectric thin film, relating to the technical field of preparation of lead zirconate titanate ceramics and being realized by the steps of preparing a precursor solution, utilizing a PLD method to prepare a substrate and adopting a Sol-Gel method to prepare the piezoelectric-ferroelectric thin film on a PZT crystal seed layer. The invention utilizes a method combing PLD and Sol-Gel to prepare a PZT thick film, thus having strong applicability to different substrates; and the prepared PZT thick film has the obvious advantages of high preferred orientation, even crystal size and compact structure, and can be used for preparing a lead zirconate titanate thin film with the thickness of 3-6 microns, the residual polarization value Pr of 25-45 mu C/cm<2> and the coercive field Ec of 40-65 kV/cm. At the same time, the method in the invention has relative low cost, strong controllability of programs and high industrialized application value.

A touch panel comprises a plurality of basic sensing-units arranged in a matrix. The basic sensing-unit comprises a pressure-sensing transistor and a selection transistor. The pressure-sensing transistor comprises a first terminal, a second terminal, a gate electrode, a mask layer, a channel connecting the first and second terminals, a dielectric layer formed on the channel, and a piezoelectric material deposited on the dielectric layer. The piezoelectric material may comprise PVDF, lead zirconate titanate, ZnO, BaTiO₃, LiNbO₃, or PbTiO₃. The selection transistor comprises a first terminal, a second terminal, and a third terminal. The first terminal of the selection transistor connects to a sensing electrode of the touch panel, the second terminal of the selection transistor connects to the first terminal of the pressure sensing transistor, and the third terminal of the selection transistor is a transistor gate and connects to a drive electrode of the touch panel.

The invention provides a preparation method of lead zirconate-titante ceramic fiber, which relates to a ceramic fiber. The fiber obtained with the diameter less than 30Mum and the length about 1cm has a single perovskite phase and comparatively high consistency and the invention can be a preparation method of lead zirconate-titante ceramic fiber of ceramic fiber for 1-3 piezoelectric composites. The preparation of lead zirconate-titante precursor solution is : lead acetate trihydrate is added into n-Butyl alcohol, complexing agent glacial acetic acid is added then; the mixture is heated, dissolved and cooled to obtain solution A; zirconium butoxide and titanium butoxide are poured into the n-Butyl alcohol in sequence to obtain the binary mixed solution of zirconium and titanium, and then acetyl acetone is added into the binary mixed solution and solution B is obtained after backflowing; the solution A and the solution B are mixed and the lead zirconate-titante precursor solution is obtained after backflowing. The preparation of lead zirconate-titante precursor sol is: the lead zirconate-titante precursor solution is steamed, concentrated and stirred, rod winding is carried out and the lead zirconate-titante precursor sol is obtained after concentration; lead zirconate-titante gel fiber is obtained through fiber drawing; after aging, the lead zirconate-titante gel fiber is dried and carried out by heat treatment.

A ferroelectric dielectric for microwave applications is provided comprising a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapor, preferably with the addition of a few percent of ozone, and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.

This invention discloses an anti-ferroelectric ceramic capacitor material and its preparation technology, which applies Sn of positive four valency to replace Zr of positive 4 valency, applies the positive 3 valency La to replace 2 valency Pb in the compound of Pb(Zr, Ti) O3 to form a multi-component solid solution with Pb vacancy. The balanced formula of the charge and the valency is: (Pb1-3 2/2Laz)[(Zri-ysny)1-Tix]O3, in which, x varies between 0.06`0.20, y: 0.2010.40, z varies between 0.02-0.08, or positive 2 valency Sr or Ba is added to replace 2 valency Pb in Pb(zr, Ti) O3, the formula is [(Pb1-wBw)1-3z/2Laz][Zr1-ySny]1-xTix ]O3, B expresses Sr or Ba of 2 valency, w varies between 0.02-0.12. A conventional electronic ceramic preparation method is applied in the method.

The invention relates to a ferroelectric piezoelectric ceramic with the characteristic of low sintering temperature. The compositions are (1-x-y)PbZrO3-xPbTiO3-yBi(Zn1/2Ti1/2)O3 and z weight percent of MnO2, wherein x is equal to between 0.30 and 0.50, y is equal to between 0.05 and 0.25, and z is equal to between 0.0 and 0.5. Oxide materials and the prior solid-state reaction electronic ceramic process are adopted to achieve the aim of sintering a compact piezoelectric ceramic chip at a low temperature between 900 and 1,000 DEG C. The PbZrO3-PbTiO3-Bi(Zn1/2Ti1/2)O3 ferroelectric piezoelectric ceramic is a single phase perovskite structure and has a 'hard' piezoelectric property. Presintering powder of the PbZrO3-PbTiO3-Bi(Zn1/2Ti1/2)O3 ferroelectric ceramic powder as a sintering auxiliary, and an electronic ceramic process of solid phase reaction are adopted so as to achieve the low temperature sintering of the strontium-doped lead zirconate titanate at a temperature of 1,050 DEG C as well as the modification of the piezoelectric property. The ferroelectric piezoelectric ceramic is particularly applicable to the manufactures of functional devices such as emission piezoelectric ceramic devices, low-temperature cofiring multi-layer ceramic piezoelectric drives, transformers, and transducers.

The present invention provides an intravascular ultrasound probing device using Doppler effect. The intravascular ultrasound probing device comprises a first tube, a first ultrasound probe head positioned in the first tube, a second ultrasound probe head positioned in the first tube and an separating member positioned between the first ultrasound probe head and the second ultrasound probe head. Preferably, the first ultrasound probe head and the second ultrasound probe head are made of lead zirconate titanate (PZT), and can generate an ultrasound with a frequency between 1 MHz and 100 MHz. The first ultrasound probe head can measure the flow of the blood in a vessel, and the second ultrasound probe head can capture the image of the wall of the vessel. The separating member is preferably made of polymer for absorbing undesired reflection wave.

A potassium niobate deposited body includes an R-plane sapphire substrate, a buffer layer composed of a metal oxide and formed above the R-plane sapphire substrate, a lead zirconate titanate niobate layer formed above the buffer layer, a potassium niobate layer or a potassium niobate solid solution layer formed above the lead zirconate titanate niobate layer, an electrode layer formed above the potassium niobate layer or the potassium niobate solid solution layer, and another substrate formed above the electrode layer.

The invention discloses a preparation method of functional ceramics material and comprises the steps: (1) suspending liquid containing organic monomer, cross linker, evocating agent, dispersant and ceramics powder lot is prepared; (2) catalyst is added, slurry is injected into a ring mental die to be solidified in situ and wet rough-body of large size ceramics is obtained; (3) after being demoulded, the rough-body is put into a net clamp, the clamp is put into a climatic chamber to be dried and then put into an oven to be dried after a plurality of days; (4) the dried rough-body is batched out under certain temperature rising system and sintered into ceramics under high temperature. The invention prepares large size high performance lead zinc niobate-lead zirconate titanate piezoceramics, barium strontium titanate pyroelectric ceramics, lead manganese niobate-lead manganese stibate-lead zirconate titanate pyroelectric ceramics.

Integrated optical crossbar switching method and apparatus preferably includes structure and/or function whereby switching and addressing circuitry is disposed on a substrate. An insulating layer is disposed on the substrate and on the switching and addressing circuitry. A polycrystalline ferroelectric layer is disposed on the insulating layer. The polycrystalline ferroelectric layer includes a first plurality of optical signal carriers and a second plurality of optical signal carriers, each disposed to receive an optical signal from at least one of the first plurality of optical signal carriers. A plurality of optical switching elements is disposed to (i) receive control and addressing signals from said switching and addressing circuitry, and (ii) to switch an optical signal from one of said first plurality of optical signal carriers to at least one of said second plurality of optical signal carriers. Preferably, PLZT (lead lanthanum zirconate titanate) materials are used in the core and cladding of the optical switching elements.

The invention relates to a high-efficiency cement-based piezoelectric material and a synthesizing method thereof. The high-efficiency cement-based piezoelectric material is characterized by comprising the following steps of: performing ball-milling on 45 to 70 volume percent of plumbum zirconate titanate (PZT) and the balance of cement and reinforcing phase, wherein the cement accounts for 65 to 95 weight percent, and the reinforcing phase accounts for 5 to 35 weight percent, mixing uniformly, adding water and a superplasticizer, stirring uniformly, pressing for forming, maintaining, and polarizing to obtain the high-efficiency cement-based piezoelectric material. After the high-efficiency cement-based piezoelectric material is placed for 30 days, a piezoelectric strain constant d33 is between 70 and 100 pC/N. The high-efficiency cement-based piezoelectric material is high in piezoelectric performance, a preparation process is easy and convenient, is small in required polarization voltage, low in cost and convenient to apply and popularize.