1 results about "Piezoresistive accelerometer" patented technology

This invention relates to the field of microelectromechanical systems (MEMS) sensor technology, and discloses a high-temperature radiation-resistant piezoresistive accelerometer chip made entirely of SiC and its fabrication method. The chip includes an upper structure, a sensitive layer structure, and a lower structure, which are stacked sequentially and connected by bonding to form a single unit, creating a sealed chamber. The sensitive layer structure includes a central mass block and four sensitive beams symmetrically arranged around it, with a Wheatstone bridge integrated on each beam. Both the upper and lower structures have bosses corresponding to the central mass block's position to limit its displacement under overload. The upper structure has a leadless electrical connection structure. All three structures are made of silicon carbide. This invention features an innovative orthogonal direction differential resistance design within a single bridge, achieving excellent temperature self-compensation and ensuring the sensor's measurement accuracy and stability across the entire temperature range.