16 results about "Resistance drift" patented technology

Memristor storage unit comprising a plurality of memristor storage devices (100; 302), each of which comprises: a memristive memory cell (102, 202); an input port (104) and an output port (108) that are directly attached to the memristive memory cell (102, 202); and an electrically isolated gate terminal (112) from the memristive memory cell (102, 202) for volatile gate-induced modulation of a conductivity of the memristive memory cell (102, 202) by receiving electrical signals; the memristor storage unit further comprises: a temperature effect control unit (402) suitable for generating a portion of the received electrical signals based on a temperature-based resistance drift effect of each of the memristor storage devices (100, 302); and / or a resistance drift correction unit (404) which is suitable for generating a different part of the received electrical signals based on a time-dependent resistance drift effect of each of the memristor storage devices (100, 302).

The invention belongs to the technical field of electronic functional material and component manufacturing, and particularly relates to a high-performance thermistor and a rapid preparation method thereof.The rapid preparation method comprises the steps that (MnCoFeNi) 3O4 is designed as a basic high-entropy ceramic component, La2O3 and Ce2O3 are cooperatively doped, and the thermal stability and the electrical performance of the material are effectively improved. A high-temperature hot pressed sintering-programmed cooling annealing integrated process is adopted, the temperature is rapidly increased to 1050-1200 DEG C at the speed of 90-120 DEG C / min, meanwhile, the pressure of 10-15 MPa is applied, heat preservation is conducted for 20-30 min, the temperature is slowly reduced to 750-850 DEG C, annealing is conducted, heat preservation is conducted for 2-3 h, powder forming and sintering are completed synchronously, and the production period is shortened. The obtained thermistor has high density (greater than 95%), the B value is between 3756 and 4201 K, the linearity of the resistivity logarithm-temperature reciprocal relation in a wide temperature range of-20 to 150 DEG C is good, and the resistance drift rate is lower than 1.5% after the thermistor is aged at 125 DEG C for 240 hours. The preparation efficiency is improved while the performance is guaranteed, and the method is suitable for the high-end fields of industrial measurement and control, medical electronics and the like.

The application provides an improved heat dissipation surface structure resistor and a resistor preparation method, and belongs to the technical field of electronic components and electronic heat management, and comprises an insulating substrate, a resistor functional layer arranged on the insulating substrate, and a first protective layer arranged above the resistor functional layer. The resistor functional layer comprises electrode layers arranged on both sides of the insulating substrate and a functional metal layer electrically connected between the electrode layers on both sides. The first protective layer covers at least the upper surface of the functional metal layer, and the first protective layer has a corrugated structure that undulates up and down along the thickness direction. By arranging the first protective layer as a corrugated structure that undulates up and down along the thickness direction, the heat dissipation area of the outer surface of the resistor is improved, the surface air convection path is optimized, the convection heat dissipation and thermal radiation heat dissipation efficiency of the resistor are strengthened, and the resistance drift, precision decline and power attenuation caused by heat accumulation are avoided.

The application discloses a single-element phase change memory material doped with a rare earth element gadolinium as well as a preparation method and application thereof. x Gd 100‑x 69.1 at.%≤x≤93.1 at.%, and is obtained by double-target sputtering of a Sb single-element target and a Gd single-element target in a magnetron sputtering coating system; the material successfully overcomes the inherent defect of poor thermal stability of a pure Sb thin film, has a higher crystallization temperature, a larger activation energy, a better data retention and an extremely low resistance drift compared to a traditional GST material, and provides a new material selection for realizing stable and reliable storage of a phase change memory under long-term and high-cycle working conditions.

Aspects of the present application allow for the measurement of a calibration resistance of a resistive film in a sensing element, such that the effects of contact resistance and background resistance drift due to factors such as temperature, strain, or aging can be reduced or eliminated. In some embodiments, a contact resistance independent resistance of a reference portion of a resistive film can be determined by taking a plurality of two-terminal resistance measurements between a plurality of electrode pairs on the resistive film. Furthermore, a contact resistance independent resistance of a sensing portion of the resistive film can be determined based on the plurality of two-terminal resistance measurements between the electrode pairs. The resistance of the reference portion can be removed from the measured resistance of the sensing portion, such that changes in the reference portion resistance that are not caused by sensing environmental conditions can be compensated for.

The invention discloses a high-precision NTC (Negative Temperature Coefficient) thermistor and a preparation method thereof, relates to the technical field of NTC thermistors, and is characterized in that the structural stability is improved through a cocktail effect; the high configuration entropy reduces the Gibbs free energy change of lattice deformation, inhibits lattice distortion at a high temperature, greatly expands the temperature range of the prepared NTC thermistor, and further improves the anti-aging performance of the NTC thermistor in a high-temperature environment, greatly reduces the resistance drift rate in the high-temperature environment, and widens the application range of the NTC thermistor in combination with multiple protection mechanisms.

The invention relates to the technical field of thick-film NTC (Negative Temperature Coefficient) thermistors, in particular to a thick-film NTC thermistor and a preparation method thereof. The thick-film NTC thermistor comprises an insulating substrate, a welding electrode, an up-down multi-layer structure electrode and an NTC resistor body, the welding electrode is laid on the first side of the insulating substrate, the up-down multilayer structure electrode is laid on the second side of the insulating substrate, the up-down multilayer structure electrode is provided with an up-down laminated part in the thickness direction of the thick-film NTC thermistor, and the NTC resistor body is located between the up-down laminated part. According to the thick film type NTC thermistor, the upper electrode and the lower electrode of the multi-layer structure are adopted, and the long-standing technical problems of film layer cracking, poor sintering state, large resistance drift and the like of the thick film type NTC thermistor are effectively solved. Specifically, the stacked design of the upper and lower multilayer structure electrodes in the thickness direction can disperse stress and buffer shrinkage nonuniformity in the sintering process, so that film layer cracking is reduced, the sintering quality is improved, and the short circuit phenomenon is avoided.

Disclosed herein is a semiconductor memory device. Provided is the semiconductor memory device includes a first device layer storing thermal energy and a second device layer being made of a material whose electrical properties are changed by the thermal energy, wherein the first device layer stores thermal energy if a voltage is applied to the second device layer. Since the device is composed of a material that is changed electrical characteristics by heat and a material that stores heat, it may be read as a current applied to the read voltage without applying other refresh voltage. In addition, there is no leakage current flowing through the device depending on the characteristics of the device, so additional circuit elements such as transistors and selectors are not required. The device has a fast-switching mechanism but does not cause leakage current thereby not showing resistance drift due to repetitive switching.

The present application belongs to the technical field of high-temperature thin film sensor, and specifically provides a high-temperature strain measurement method based on a thin film strain sensor. The present application adopts a high-temperature base point method, specifically a thin film strain analysis method taking the initial resistance of a thin film strain gauge at a to-be-measured temperature as a base point, a high-temperature resistance drift as compensation, and a high-temperature resistance change as a parameter. This method does not need to consider the strain gauge resistance temperature effect and the visual strain error (thermal output) caused by the difference between the sensitive grid and the material linear expansion coefficient of the tested piece, avoids the signal error caused by the thermal output of the high-temperature strain sensor, and does not need to perform temperature compensation on the thermal output data in application, only resistance drift compensation is needed. In summary, the present application takes the high-temperature base point as the calculation base point of the resistance change value, simultaneously compensates the resistance drift at high temperature, effectively reduces the error, improves the measurement precision, and at the same time, verifies the effectiveness of the measurement result through the signal post-processing function, and improves the application range.

This invention provides a temperature-self-calibrated current sampling device and method. The device includes a constant current source, a sensing unit, an analog-to-digital converter, a measurement unit, and a computing unit. The sensing unit is divided into a reference resistor region and a sampling resistor region, which are electrically isolated and thermally coupled. By ensuring consistency in material systems, packaging forms, and deployment environments between the reference resistor region and the sampling resistor region, they exhibit essentially synchronized temperature change characteristics during operation. This enables real-time and accurate compensation for resistance drift in the sampling resistor based on the reference resistor, avoiding compensation deviations caused by thermal conduction delays or temperature detection lags in traditional temperature compensation schemes.

The invention discloses a low-drift phase change memory array, architecture and neural network operation component, the phase change memory array is composed of m rows and k columns of phase change memory units, top electrodes of phase change elements in the phase change memory units are electrically connected with drain electrodes of switch elements, bottom electrodes of the phase change elements in the phase change memory units are connected with bit lines, grid electrodes of the switch elements are connected with word lines, the source electrode is connected with the source line; the phase change memory architecture comprises a control circuit, a word line (WL) driver, a bit line (BL) driver, a source line (SL) driver, an input or output processing circuit and a phase change memory array, the neural network operation assembly comprises a phase change memory array, an input circuit, a driving circuit, a programming circuit, an output circuit and a digital processing circuit. According to the invention, the resistance drift phenomenon of each storage unit in the device array is effectively inhibited.

The application discloses a high-precision NTC thermistor and a preparation method thereof, relates to the technical field of NTC thermistors, and improves the structural stability through a "cocktail effect"; high configuration entropy reduces the Gibbs free energy change of lattice deformation, inhibits lattice distortion under high temperature, greatly expands the temperature range of the prepared NTC thermistor, combines a multiple protection mechanism, further improves the anti-aging performance of the NTC thermistor in a high-temperature environment, greatly reduces the resistance drift rate in the high-temperature environment, and widens the application range of the NTC thermistor.

The invention discloses a Ce-doped La2Sn2O7-based wide-temperature-range negative temperature coefficient (NTC) thermistor material and application thereof, belongs to the field of semiconductor sensing, and aims to expand the applicable temperature range of a La2Sn2O7 NTC thermistor. According to the preparation method, SnO2, La2O3 and CeO2 are taken as raw materials, and a high-temperature solid-phase method is adopted for preparation. The chemical formula of the material is La (2-x) CexSn2O7, wherein x represents the doping amount of Ce, and the range is 0 lt; x is smaller than or equal to 0.4. Through measurement, the resistivity of the material at 1200 DEG C is as follows: rho 1200 DEG C is equal to 2.45-5.89 * 10 < 2 > + / -2.89% omega.cm; when x is 0.1, the temperature range of the material is 200-1200 DEG C; when x is 0.2 or 0.3, the temperature range of the material is 100-1200 DEG C; and when x is 0.4, the temperature range of the material is 50-1200 DEG C. Meanwhile, the heat-sensitive material has an obvious negative temperature coefficient characteristic in a corresponding temperature range, and the resistance drift rate is smaller than 7.73% after the heat-sensitive material is aged for 500 hours at the temperature of 1000 DEG C. The system material is stable in electrical property and good in high-temperature aging stability, is a wide-temperature-range thermistor material suitable for medium and high temperature environments, and has a good application prospect in the field of medium and high temperature sensing.

Disclosed in the present invention are a phase-change memory material and device, and a programming apparatus. The phase-change memory material has a chemical formula of CrxTe100-x, wherein 0<x<100; at -200°C to 200°C, the resistance drift coefficients of amorphous and crystalline thin films of the phase-change memory material are both less than or equal to 0.002; and at -200°C to 200°C, the resistance drift coefficients of different logic states of a phase-change device based on CrxTe100-x and of a device unit in an array are all less than or equal to 0.002. Thus, the data programming accuracy and read-write accuracy over a wide temperature range are effectively improved, and the resistance drift problem in existing phase-change memory technology, particularly the problem of resistance drift behavior being complicated under operating temperatures, is overcome. The programming apparatus comprises a pump laser system, an electrical testing system, a cold and hot temperature control system, and control and monitoring software, thus implementing an "optically controlled electrical-measurement" programming operation of the phase-change memory device in a specific environment; and the programming apparatus can quantitatively control the crystalline-to-amorphous volume ratio during the gradual switching between SET and RESET, thereby achieving linear, continuous and symmetrical variations of the logic states of the device unit.

The invention discloses a temperature drift correction method and system for a shunt resistance type current detection analog front-end circuit, and belongs to the technical field of integrated circuits. In order to solve the problem that the current detection precision is influenced by resistance drift caused by temperature change of a shunt resistor, reference voltage matched with the temperature coefficient of the shunt resistor is generated in a chip, and proportional operation is carried out on induction voltage sampled from the shunt resistor and the reference voltage, so that the temperature drift influence is counteracted in a voltage domain, and the current detection precision is improved. And a corrected voltage signal basically irrelevant to the temperature is obtained and is quantized to output an accurate current value. The problems that an existing temperature drift compensation scheme is complex in system, high in cost and slow in response are effectively solved, the precision and stability of current detection in a wide temperature range are remarkably improved, and meanwhile the temperature drift compensation circuit has the advantages of being simple in structure, easy to integrate and high in reliability.

This invention discloses a method, system, and device for early warning of composite cable supports. The method comprises: applying a constant current to a carbon nanotube sensing coating to obtain an analog voltage signal; preprocessing the analog voltage signal to obtain a smooth digital voltage value; collecting temperature and humidity data at the location of the carbon nanotube sensing coating, inputting the temperature and humidity data into a preset temperature and humidity compensation model, calculating the resistance drift caused by environmental factors, and calculating a first resistance change caused solely by strain based on the resistance drift and the digital voltage value; when the load identification algorithm determines that the composite cable support is in a zero-load state, performing zero-point drift correction on the first resistance change to obtain a second resistance change, calculating a real-time strain value based on the second resistance change, and providing an early warning for the composite cable support based on the real-time strain value. Therefore, this invention can achieve accurate strain early warning.