130results about "Negative temperature coefficient thermistors" patented technology

The present invention relates to a ceramic substrate (10) having at least one metallization layer (20) on at least one surface (11) and at least one feedline (30) in electrical contact with said metallization layer (20), and an encapsulation structure (40) surrounding said ceramic substrate (10), said at least one metallization layer (20), and a first segment (31) of said at least one feedline (30), said first segment (31) being directly adjacent to said metallization layer (20). a protective layer (50) surrounding the encapsulation structure (40) and a second segment (32) of the at least one supply line (30), the second segment (32) being directly adjacent to the first segment (31); and an insulating layer (60) surrounding the protective layer (50) and a third segment (33) of the supply line (30), the third segment (33) being directly adjacent to the second segment (32). The present invention further provides a method for manufacturing a ceramic element.

This negative-characteristic thermistor is provided with: a ceramic substrate formed from a ceramic composition containing Mn, Ni, and Fe; and an external electrode provided at an end portion of the ceramic substrate, in which the external electrode includes a base layer covering the end portion of the ceramic substrate and including Cu and glass, and a plating layer covering the base layer, and the Ni content, the Mn content, and the F content in the ceramic substrate satisfy the following formulae (1) and (2): 26.4 mol% < = [Ni] < = 29.5 mol%, 1.65 < = [Mn] / [Fe] < = 1.90 (2). Wherein [Ni], [Mn], and [Fe] are the contents (mol%) of Ni, Mn, and Fe, respectively, when the total content of Mn, Ni, and Fe contained in the ceramic matrix is 100 mol%.

A sensor device (1) for measuring the temperature of a surface (9A) is described, comprising: at least one sensor element (2); a ceramic housing (3) in which the sensor element (2) is at least partially disposed within the ceramic housing (3); a base (5) at least partially surrounding the ceramic housing (3); an external housing (8) connected to the base (5) in which the external housing (8) at least partially encloses the base (5) and the ceramic housing (3); and at least one mounting element (7) adapted and positioned to mount the sensor device (1) to a target application (9), wherein the ceramic housing (3) is adapted and positioned to be in direct mechanical contact with the surface (9A) whose temperature is to be measured. Furthermore, the use of the sensor device (1) is described.

An electronic component that includes: a base body; and an external electrode that covers a part of an outer surface of the base body, the external electrode including: an underlying electrode containing copper and silicon; and a metal layer that covers an outer surface of the underlying electrode, wherein at least some of the copper has copper particles with a flattening ratio of 0.5 or less, and when the underlying electrode is viewed in section, the silicon is distributed so as to fill gaps between the copper particles.

The application provides a high-B-value linear NTC thermistor material with good batch consistency, a preparation method thereof and a thermistor element, relates to the technical field of NTC thermistor materials, and is characterized in that a NiO-ZnO binary oxide system is selected, ZnO is used as a main crystal phase, the conductive behavior and resistance-temperature characteristics of the material are controlled through a small amount of NiO, a NiO-ZnO linear NTC thermistor material directly physically compounded by NiO and ZnO is formed, the system composition is more simplified, the composite path is shorter, the phase composition is more easily controlled, the composition fluctuation and the organization non-uniformity caused by the complex second phase generation process, the insufficient local reaction or the uneven phase distribution can be reduced, and therefore the performance dispersion between different batches is reduced, and the consistency and the repeatability of the material preparation are improved.

An electrical device is specified. According to one embodiment, an electrical device includes an electrical element including two electrodes and two wires connected to the electrodes, where each wire includes a flat region constituting a wire end, and where the flat region is configured for contacting the electrodes. The invention further relates to a method for producing an electrical device.

Provided is a ceramic composition enabling a lower sintering temperature (or firing temperature), an electronic component, and a method for manufacturing the ceramic composition. A ceramic composition of the present disclosure comprises an oxide containing Mn and Ni elements, and contains all of Li, Na, and K elements.

A sensor element (1) for measuring a temperature is described, comprising - a carrier (2), - at least one functional layer (3) arranged on a top surface (2a) of the support, wherein the functional layer (3) has a material with a temperature-dependent electrical resistance, - at least one lower electrode (4), wherein a contact area (c2) is formed between the at least one lower electrode (4) and the functional layer (3), - at least one upper electrode (5), wherein a contact area (c1) is formed between the at least one upper electrode (5) and the functional layer (3), wherein the functional layer (3) is at least partially embedded between the at least one lower electrode (4) and the at least one upper electrode (5), and wherein the functional layer (3), the at least one upper electrode (5), and the at least one lower electrode (4) are designed and arranged such that a specific electrical resistance of the sensor element (1) is achieved. Furthermore, a use of the sensor element (1) is described.

An aspect of the disclosure relates to a composite thermistor element (10). The element comprises a sensor material (1) disposed between a pair of electrodes (2a, 2b). The sensor material comprises particles (3) in a dielectric matrix (4). The particles (3) have a core (6) with a temperature dependent resistance and a coating layer (7) of an inorganic material. The particles form an electronic conduction path (5) between the electrodes (2a, 2b) with a temperature dependent resistance and a baseline resistance. Further aspects relate to methods of making thermistors, coated particles, compositions for use in making composite thermistors comprising the particles, and temperature sensors comprising the thermistors disclosed herein.

The application discloses a method for precisely depositing an atomic BaTiO3 film on the surface of nickel powder. The method adopts a fluidized bed atomic layer deposition technology, and realizes self-limiting growth of the BaTiO3 film on the surface of the nickel powder by taking titanium-based and barium-based precursors and an oxidizing agent as reaction sources under the conditions of a deposition temperature of 200-400 DEG C and a reaction pressure in a range of 0.1 Torr to normal pressure, so as to form a nanoscale and thickness-controllable dense structure. The method can overcome defects such as poor film quality and fuzzy interface in traditional technologies, and the prepared core-shell structure Ni@BaTiO3 composite powder has the characteristics of uniform coating, strong bonding force, excellent oxidation resistance and the like, can significantly improve the sintering matching property and electrical property of a multilayer ceramic capacitor, and is suitable for the field of internal electrode materials of other electronic components.

The invention belongs to the technical field of electronic functional material and component manufacturing, and particularly relates to a high-performance thermistor and a rapid preparation method thereof.The rapid preparation method comprises the steps that (MnCoFeNi) 3O4 is designed as a basic high-entropy ceramic component, La2O3 and Ce2O3 are cooperatively doped, and the thermal stability and the electrical performance of the material are effectively improved. A high-temperature hot pressed sintering-programmed cooling annealing integrated process is adopted, the temperature is rapidly increased to 1050-1200 DEG C at the speed of 90-120 DEG C / min, meanwhile, the pressure of 10-15 MPa is applied, heat preservation is conducted for 20-30 min, the temperature is slowly reduced to 750-850 DEG C, annealing is conducted, heat preservation is conducted for 2-3 h, powder forming and sintering are completed synchronously, and the production period is shortened. The obtained thermistor has high density (greater than 95%), the B value is between 3756 and 4201 K, the linearity of the resistivity logarithm-temperature reciprocal relation in a wide temperature range of-20 to 150 DEG C is good, and the resistance drift rate is lower than 1.5% after the thermistor is aged at 125 DEG C for 240 hours. The preparation efficiency is improved while the performance is guaranteed, and the method is suitable for the high-end fields of industrial measurement and control, medical electronics and the like.

This application relates to the field of thermistor technology, specifically disclosing an NTC thermistor material, a chip resistor, and its preparation method and application. The NTC thermistor material provided in this application comprises a base material and 3-13% additives by weight; the base material comprises Mn3O4, Co3O4, Al2O3, Fe2O3, and ZnO in a weight ratio of (10-40):(10-50):(1-15):(10-25):(5-19); the additives comprise MgAl2O4, Nb2O5, and TiO2 in a weight ratio of (1-200):(1-10):(5-25); this application also provides a chip resistor made using the NTC thermistor material. The NTC thermistor material provided in this application has a high material constant B value and a low room temperature resistivity ρ. 25 It can meet the application requirements of high-precision and high-reliability temperature sensors.

The invention discloses an infrared sensor bridge arm structure, a chip with the bridge arm structure and a preparation method of the infrared sensor bridge arm structure, and relates to an infrared sensor bridge arm structure which comprises an upper film layer, a metal layer and a lower film layer. The stress of the upper film layer is positive, and the stress of the lower film layer is negative; the upper film layer and the lower film layer have the same stress absolute value which is 100 MPa. By adjusting the power, the frequency, the temperature and the pressure of the reaction cavity of the chemical vapor deposition technology, the bridge arm structure with the upper film layer stress being positive, the lower film layer stress being negative and the absolute values of the upper film layer stress and the lower film layer stress being 100 MPa is prepared, and the bridge arm structure is stable and not prone to deformation; the thickness of the upper and lower film layers is changed by adjusting the deposition time of the chemical vapor deposition process, the thickness of the upper film layer is smaller than that of the lower film layer, and the deformation rate of the bridge arm is the lowest.

The application relates to a laminated chip NTC thermistor element and a manufacturing method thereof. By optimizing the matching and process of the protective layer paste and the thermistor paste, the difference between the expansion coefficients of the protective layer and the thermistor layer is reduced, then the built-in protective layer and the thermistor layer are synchronously printed to form a blank body, the built-in protective layer has a flat cutting surface when the blank body is cut, finally, the problem of different expansion coefficients is overcome when the protective layer and the thermistor layer are sintered together, the built-in protective layer and the thermistor core are synchronously formed, the subsequent process flow for forming the built-in protective layer is avoided, thereby the process flow steps are saved, the manufacturing period and the manufacturing cost are reduced, and a laminated chip NTC thermistor element with high machining precision and standard specification size is obtained through the process flow.

The utility model belongs to the technical field of NTC supports, and particularly relates to a flexible abutting NTC support which comprises an NTC supporting plate and a buckle plate connected to one end of the NTC supporting plate, a positioning bottom plate is installed on the bottom face of the NTC supporting plate, and a positioning rod is connected to the inner side of the positioning bottom plate. According to the utility model, when the NTC support plate and the buckle plate are supported with an electrical element, the bottom surface of the electrical element is in contact connection with the surface of the support plate, and the linkage plate at the bottom end of the support rod is driven to extrude the buffer spring, so that the electrical element can be supported by the NTC support plate and the buckle plate. When the NTC bracket is pressed, the buffer spring is driven to be extruded and deformed, and meanwhile, the bottom surface of the electrical element is driven to be in contact with the surface of the elastic gasket, so that the NTC bracket and the electrical element are conveniently and flexibly abutted, and the NTC bracket can select different rigidities and pre-tightening forces according to requirements so as to adapt to different application scenes and the size and weight of the NTC element.

To provide a laminated electronic component and a manufacturing method thereof that improve defects such as side margin gaps, occurrence of short circuits, and deterioration of moisture resistance reliability.SOLUTION: A method includes providing a ceramic green sheet 211 having a plurality of internal electrode patterns 221 and 222 spaced apart from each other, laminating ceramic green sheets to form a ceramic green sheet laminate, obtaining a laminate body 210 by cutting the ceramic green sheet laminate such that the ends of the internal electrode patterns have side surfaces exposed in the width direction, an adhesive layer adhering step of adhering an adhesive layer AD attached to a base film BF to the exposed side surface of the internal electrode pattern of the laminate, and an adhesive layer peeling step of removing foreign matter on the side surface by peeling the adhesive layer.SELECTED DRAWING: Figure 11

sensor element (1) for measuring a temperature - a carrier (2), - at least one functional layer (3) arranged on a top surface (2a) of the support, wherein the functional layer (3) has a material with a temperature-dependent electrical resistance, - at least one upper electrode (5), wherein a first contact area (c1) is formed between the at least one upper electrode (5) and the functional layer (3), - at least one lower electrode (4), wherein a second contact area (c2) is formed between the at least one lower electrode (4) and the functional layer (3), wherein the functional layer (3) is at least partially embedded between the at least one lower electrode (4) and the at least one upper electrode (5), and wherein the functional layer (3), the at least one upper electrode (5), and the at least one lower electrode (4) are designed and arranged such that a specific electrical resistance of the sensor element (1) is achieved. wherein the sensor element (1) has a plurality of upper electrodes (5) and a plurality of lower electrodes (4) connected in series, whereby a resistance is determined - by the size of the respective first contact area (c1) and / or - by the size of the respective second contact area (c2) and / or - by a relative position of the first contact areas (c1) and the second contact areas (c2) and / or - by a size of overlap areas (o) between first contact areas (c1) and second contact areas (c2) and / or - by a number of resistors connected in series.

The application relates to a flux synthesis method of doped niobium dioxide sensitive resistance material, belonging to the field of thermosensitive electronic phase change. Specifically, the application relates to a method for reducing reaction temperature by using a flux, and the doped niobium dioxide electronic phase change material is batch-synthesized through high and low valence state niobium precursor batching and flux reaction in an inert or vacuum atmosphere to prepare powder, ceramic or thin film material. The application provides a non-uniform nucleation condition for new phase growth by introducing an alkali metal halide flux with similar lattice parameters of the synthesized material, reduces the free energy of the nucleation and growth of the new phase, greatly reduces the required reaction temperature and reaction time of the material synthesis, and can realize the batch preparation of high-purity and high-uniformity material in a controllable atmosphere. The reaction speed is fast, energy consumption is reduced, and the prepared doped niobium dioxide electronic phase change material has a chemical formula of Nb 1‑x M x O2: M is a rare earth element or a transition group metal element, and has considerable application value in the fields of high-temperature thermosensitive resistance, critical temperature coefficient thermosensitive resistance, nonvolatile storage, sensors and the like.

This invention provides a multilayer electronic component with excellent moisture resistance reliability, reduced pores, and superior toughness and resistance to warping and cracking. [Solution] The stacked electronic component 1 includes a body comprising a dielectric layer 111 and internal electrodes 121 and 122 arranged alternately with the dielectric layer in the thickness direction, a first external electrode 131 and a second external electrode 132 arranged on the third surface 3 and the fourth surface, respectively, a first side margin portion 114 arranged on the fifth surface 5 and extending to a part of the first surface 1 and the second surface 2, and a second side margin portion 115 arranged on the sixth surface 6 and extending to a part of the first surface and the second surface. The first and second side margin portions include a first margin layer 114a and 115a arranged in contact with the body and a second margin layer 114b and 115b arranged on the first margin layer, and the first and second margin layers differ in at least one of the average size of the crystal grains and the dielectric composition.

To provide an electronic component which suppresses the occurrence of cracks in an element body.SOLUTION: The internal electrode disposed in the element body includes an end exposed to the first side surface. The outer conductors disposed on the element body contain a glass composition containing SiO2 and Al2O3 and conductive metals. The external conductor includes a first region disposed on the first side surface and connected to the end included in the internal conductor, and a second region disposed on at least one of the pair of second side surfaces. The glass composition included in the first region has a total content of 23mol and Al2O3 of SiO2% or more. The glass composition contained in the second region has a total content of 5mol and 20mol of SiO2% or more and Al2O3% or less.SELECTED DRAWING: Figure 2

A high-B-value low-resistivity NTC thermistor medium material is made of raw materials with the following weight ratio: Mn3O 4 80-92%, Ni2O 3 1-5%, CuO 2-8%, Al2O 3 0.5-2%, ZnO 0.5-1%, LiLaGeO 4 0.4-3%, NaAlSi2O 6 0.2-4%, TiO 2 0.1-0.8%. The high-B-value low-resistivity NTC thermistor medium material has the following advantages: (1) the material constant B value is high, the B value is 4810-5625K at -25-200 DEG C; (2) the prepared NTC thermistor has high sensitivity, good stability and good current impact resistance; after the maximum steady-state current, the product resistivity changes little; the delay resistance change rate is small; it is suitable for precise measurement and precise control of temperature and other aspects; (3) the resistivity is low, the room temperature resistivity (rho 25℃ ) is in the range of 8.1 ohm-cm~9.4 ohm-cm; (4) the sintering temperature of the NTC thermistor ceramic is low, which is 1130-1200 DEG C.

A negative temperature coefficient thermistor includes: a ceramic base body composed of a ceramic composition containing Mn, Ni, and Fe; and an outer electrode provided in an end portion of the ceramic base body. The outer electrode includes an underlying layer covering the end portion of the ceramic base body and containing Cu and glass, and a plating layer covering the underlying layer. A Ni content, a Mn content, and a F content in the ceramic base body satisfy the following formulae (1) and (2). 26.4mod%≤Ni≤29.5mol% 1.65≤Mn / Fe≤1.90 In the formulae, [Ni], [Mn], and [Fe] represent the Ni content, the Mn content, and the Fe content (mol%), respectively, provided that a total content of Mn, Ni, and Fe in the ceramic base body is taken as 100 mol%.

The utility model provides a surface-mounted resistor of an industrial motor controller, which comprises a device main body, a cavity is arranged in the device main body, the inner wall of the device main body is connected with an insulating barrier plate, the outer walls of the two sides of the insulating barrier plate are connected with leads, and the outer wall of one end of each lead is connected with a thermistor. According to the surface-mounted resistor of the industrial motor controller, the positioning groove in the outer wall of the top end of the insulating barrier plate is matched with the clamping block on the outer wall of the bottom of the connecting rod, so that the insulating barrier plate, the lead and the thermistor are fixed; and meanwhile, the two lead wires are separated by virtue of the insulating barrier plate, so that the situation that the two lead wires are short-circuited when the device runs is prevented.

A kind of high-current power type thermosensitive chip and its preparation method;Effectively solve the premise of not increasing product volume, significantly improve the current carrying capacity of chip, its technical scheme is as follows:The thermosensitive chip uses composite material, the composite material includes main material and composite additive;The weight percentage of each component in the main material is as follows:Manganese tetroxide Mn₃O₄: 30-70%, zinc oxide ZnO: 10-30%, copper oxide CuO: 8-20%, cobalt tetroxide Co₃O₄: 1-10%;The composite additive accounts for 1-10% of the weight of main material;The beneficial effects of the present application are as follows:Multi-layer ring structure design is adopted, a synergistic heat dissipation mechanism is formed, which is beneficial to heat dissipation in the upward and downward directions simultaneously, avoiding the "thermal bottleneck" effect of heat accumulation in the center area of solid structure;Effectively solve the technical bottleneck of traditional power type thermistor relying on increasing volume to improve current capacity, have outstanding industrial application value, improve thermal stability and durability at the same time.

The present application provides a circuit protection device, comprising: a patch type thermistor element including a first electrode and a second electrode; a first heat dissipation terminal connected with the first electrode; a second heat dissipation terminal connected with the second electrode; and a housing protecting the thermistor element, the first heat dissipation terminal and the second heat dissipation terminal. The circuit protection device according to the present application having an SMD (Surface Mount Device) structure can be applied to an ultra-thin wall-mounted television.

The invention relates to a rare earth oxide high-temperature thermistor material suitable for extreme temperature measurement and control, which is characterized in that high-entropy rare earth tantalate is used as a base material, niobium ions and TM ions are doped at a tantalum ion site at a B site, RE is five of rare earth elements of Tb, Dy, Ho, Er, Tm, Yb or Lu, TM is a transition metal element of V, W or Hf, and TM is a transition metal element of Tb, Dy, Ho, Er, Tm, Yb or Lu. The preparation method comprises the following steps: mixing five of raw materials including terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide and lutetium oxide with tantalum pentoxide and niobium pentoxide; the preparation method comprises the following steps of: mixing and grinding the raw materials and transition metal oxide vanadium pentoxide, tungsten trioxide or hafnium oxide, presintering, carrying out cold isostatic pressing, sintering at high temperature, and coating and burning an electrode to obtain a material with the constant B value of 14631-17732 K, the resistivity of 3.42 * 10 < 6 >-7.70 * 10 < 7 > omega.cm and ln (rho) at the temperature of 500 DEG C, the linear determination coefficient R2 of 1000 / T of 996.32-99.72 per mill, the aging coefficient of less than 5% after aging at the temperature of 1500 DEG C, stable resistance performance, and the like. The rare earth oxide high-temperature thermosensitive resistor has excellent negative temperature coefficient thermosensitive characteristics in a wide temperature range of 300-1500 DEG C. The invention further discloses a preparation method of the rare earth oxide high-temperature thermosensitive resistor.

The utility model discloses a novel NTC (Negative Temperature Coefficient) integrated fixing structure on a power battery and an energy storage battery, which comprises a thin film and a plurality of groups of aluminum bars oppositely arranged on the thin film, the flexible circuit board is positioned between each group of aluminum bars; the NTC is arranged at the tail end of the aluminum bar and is connected with the aluminum bar through an integrated injection molding piece; the integrated injection molding piece comprises a supporting part connected with the NTC and a limiting part connected with the aluminum bar, and the supporting part and the limiting part are integrally formed. According to the utility model, the hot-pressed film, the aluminum bar and the integrated injection molding piece are connected, a common NTC support and an FR4 structure used on an FPC are canceled, the original support function and the FR4 function are combined into one, the product cost is reduced, the space which can be designed and used by a CCS assembly is also released, the operation steps of original support loading and hot riveting fixation are reduced, and the production efficiency is improved. And the CCS assembling efficiency is improved, and the application range is wide.

The invention relates to the technical field of NTC (Negative Temperature Coefficient) thermistors, in particular to a thin film type NTC thermistor and a preparation method thereof. Forming an insulating layer: forming the insulating layer on the surface of the substrate to isolate the conductivity of the substrate; forming an adhesive layer: forming the adhesive layer on the insulating layer to enhance the adhesive force of the substrate; preparing an alloy thermosensitive film: sputtering a Mn-Co-Ni ternary system target material, a Mn-Co binary system target material, a Mn-Ni binary system target material or a Mn-Co-Ni-Al quaternary system target material onto the adhesion layer by adopting a magnetron sputtering method, and then carrying out graphical treatment through a laser process to obtain the alloy thermosensitive film; the alloy thermosensitive film partially covers the adhesion layer; electrode films are prepared, specifically, one or more metal materials containing silver, gold, platinum, titanium, tungsten and alloys of silver, gold, platinum, titanium, tungsten and the alloys of silver, gold, platinum, titanium, tungsten and the alloys of silver, gold, platinum, titanium, tungsten and the alloys of silver, gold, platinum, titanium, tungsten and the alloys of silver, gold, platinum, titanium, tungsten and the alloys are formed on the alloy thermosensitive films through a sputtering technology to form the oppositely-arranged electrode films, and then electrode patterns which form bent or arc-shaped patterns and expose the alloy thermosensitive films are etched on the electrode films through a laser technology.

The application relates to a wide-temperature-range negative temperature coefficient thermosensitive ceramic material and a preparation method thereof. The thermosensitive ceramic material comprises, in percentage by weight, 58.17-71.47% of lanthanum trioxide, 20.53-23.01% of aluminum trioxide, 3.98-15.36% of cerium dioxide and 1.54-5.94% of niobium pentoxide, and the chemical composition is La 1‑ x Ce x Al 1‑y Nb y O3, wherein x=0.05-0.20 and y=0.025-0.10. The NTC thermistor has the advantages of an ultra-wide temperature range (25 DEG C-1500 DEG C), good consistency of resistance value and B value, a resistance drift rate of less than 0.375% after aging for 500 hours at high temperature, high stability, long service life and the like.

The invention provides a temperature sensor having a planar heat-sensitive part and capable of improving heat resistance and high-speed responsiveness, and a device provided with the temperature sensor. The temperature sensor is characterized by being provided with: a substrate (2) formed from a glass material that does not undergo a phase change in a use temperature range; at least one pair of thermistor electrode layers (3) formed on the substrate (2) and at least one pair of lead connection electrode layers (33) connected to the thermistor electrode layers; a thin-film resistive film (4) electrically connected to the at least one pair of thermistor electrode layers (3) formed on the substrate (2); a cover part which covers the thin-film resistive film (4) and is made of a glass material; and at least one pair of lead parts (8) electrically connected to the at least one pair of lead connection electrode layers (33), in which a planar first planar part (60) as a heat-sensitive part is formed on the substrate side, and a planar second planar part (50) as a heat-sensitive part is formed on the lid part side.