The invention discloses Bi2O3-B2O3-ZnO-SiO2
electronic packaging glass as well as a preparation method and application of the Bi2O3-B2O3-ZnO-SiO2
electronic packaging glass. The Bi2O3-B2O3-ZnO-SiO2
electronic packaging glass is prepared from the following
raw material components in percentage by weight: 6 to 12 percent of SiO2, 3 to 5 percent of Al2O3, 4 to 7 percent of Na2O, 1 to 4 percent of ZrO2, 10 to 20 percent of B2O3, 10 to 22 percent of ZnO and 48 to 60 percent of Bi2O3. Through component regulation and control and heat treatment
process optimization, on one hand, the
sintering temperature is reduced to 500-650 DEG C, and the
structural integrity of the resistive layer is guaranteed; on the other hand, the
thermal expansion coefficient is stabilized at 7.8-8.5 * 10 <-6 > / DEG C, the matching degree with a
ruthenium resistance layer is improved to 90% or above, and the interface
internal stress and the
thermal cycle cracking risk are greatly reduced; furthermore, the
wetting angle of the obtained glass molten
slurry is small, the glass molten
slurry can fully extend on the surface of the resistive layer, the defect of incomplete coverage of traditional encapsulation is overcome, and the thickness uniformity of the encapsulation layer is ensured; the prepared packaging layer has high electrical insulativity, high
air tightness, strong
chemical stability and small
internal stress, can stably serve for a long time in a high-temperature environment, and is suitable for the fields of resistors,
automotive electronics, sensors and the like with high reliability requirements.