59results about "Current collector arrangements" patented technology

A microelectronic assembly, including a microelectronic element such as a semiconductor chip and a dielectric material covering the chip and forming a body having a bottom surface. The assembly includes conductive units having portions exposed at the bottom surface, posts extending upwardly from said exposed portions and top flanges spaced above the bottom surface.

The resistance of a thin-film resistor is substantially increased by forming the thin-film resistor to line one or more non-conductive trenches. By lining the one or more non-conductive trenches, the overall length of the resistor is increased while still consuming approximately the same surface area as a conventional resistor.

Provided are: a chip resistor which is capable of adjusting the resistance with high accuracy, while maintaining high sulfurization resistance of an electrode thereof, even in cases where the resistance of the chip resistor is low; and a method for manufacturing this chip resistor. This chip resistor (1) comprises an insulating film which covers a resistor (4) that is formed so as to be in contact with both of a pair of electrodes (3, 3) formed on the upper surface (2A) of an insulating substrate (2). Each of the pair of electrodes (3, 3) comprises: (1) a main electrode layer (3B) that contains silver as a main metal component, while containing 10% by weight or more of palladium, and an auxiliary electrode layer (3A) that has a lower specific resistance than the main electrode layer (3B); (2) a multilayer portion wherein the auxiliary electrode layer (3A) and the main electrode layer (3B) are sequentially laminated in this order on one surface of the insulating substrate (2); and (3) an exposed part (3A1) of the auxiliary electrode layer (3A) on the far side from the resistor (4), where the main electrode layer (3B) does not cover a part of the auxiliary electrode layer (3A), and an extending part (3B1) that extends from the near side to the far side from the resistor (4).

The present invention is to provide a heating substrate equipped with a conductive thin film and electrodes. The heating substrate includes a transparent substrate, a plurality of electrodes formed on a first face of the substrate, and a conductive thin film formed on the first face of the substrate and including a plurality of regions electrically connected each other in parallel by the plurality of electrodes. Furthermore, a method of manufacturing a heating substrate equipped with a conductive thin film and electrodes according to an exemplary embodiment of the present invention includes forming the conductive thin film on a substrate, forming main electrodes so as to extend on the substrate while being adjacent to edges of the conductive thin film, and forming branched electrodes that are extended from the conductive thin film across one side of the conductive thin film while coming in contact with the conductive thin film.

A resistor device includes a resistor plate and an electrode structure. The electrode structure includes an electrode layer and an auxiliary layer. The electrode layer is disposed at a first face of the resistor plate and includes a first portion and a second portion overlying a first side and a second side of the resistor plate, respectively, and a current path is conducted between the first portion and the second portion through the resistor plate. The auxiliary layer is disposed at a second face of the resistor plate and includes at least a first block and a second block overlying the first side of the resistor plate, and at least a third block overlying the second side of the resistor plate, wherein the first, second and third blocks of the auxiliary layer are separated from one another so that any current flow among the blocks is blocked.

A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor element; and a side-surface oxidation preventing insulating film formed only near a side surface of the metal resistor element by performing anisotropic etching after being deposited on a whole surface of a wafer in a process separated from the lower-surface oxidation preventing insulating film and the upper-surface oxidation preventing insulating film. According to the present invention, it is possible to prevent the increase of the resistance value due to the oxidation of the metal resistor element and also to prevent the increase of the parasitic capacitance between metal wiring layers without complicating the fabrication process.