316results about "Non-adjustable resistors" patented technology

The utility model provides a leveled resistor element, which comprises a substrate, a resistor layer and an electrode layer, solves the problems of impedance increase and abnormal product characteristics caused by improper joint of an interface between the electrode layer and the resistor layer, and comprises the following steps of: after the electrode layer process is finished, forming the resistor layer on the substrate; and laser or grinding is utilized to eliminate the height difference of the interface and process the discontinuous structure of the outline of the electrode layer.

A frame terminal 8 is bent so that its cross-sectional shape is an S-shape, and such that separation distances L1, L2 and L3 in a horizontal direction between an uppermost portion and a lowermost portion, in the vertical direction, of an end portion side face 21a of a resistance element 8 built into a mold divider 1, and a part substantially midway between an uppermost point and a lowermost point thereof, and the parts of the surface of the frame terminal 6 that correspond to these parts in the horizontal direction satisfy the relation L1>L2≥L3. As a result, in the mold divider 1, a space which is to be filled with a joining material and which has a non-uniform separation distance is formed between the frame terminal 6 and the end portion side face 21a, thereby making it possible to ensure the bonding strength between the resistance element 8 and the frame terminal 6.

The invention discloses a film platinum resistor temperature sensor, which comprises an aluminum oxide insulating substrate, a titanium film, a platinum film resistor layer, a protective layer, a platinum metal lead and encapsulating slurry, the titanium thin film is deposited on the surface of the aluminum oxide insulating substrate, the platinum thin film resistance layer is deposited on the surface of the titanium thin film, the protection layer is deposited on the surface of the platinum thin film resistance layer, the platinum metal lead is welded on a bonding pad on the platinum thin film resistance layer, and the packaging slurry is coated on the protection layer and the platinum thin film resistance layer. According to the invention, the platinum film temperature sensor with high precision, good consistency, wide temperature measurement range and strong stability is obtained through arrangement and allocation of a multi-layer structure.

The utility model relates to a high-power box-type liquid-cooled brake resistor, the resistor takes away heat through cooling liquid, the resistor comprises a shell, a resistor unit and a mounting plate, the mounting plate is mounted in the shell, the resistor unit is mounted on the mounting plate, the resistor further comprises a water inlet, a water outlet, a water passing plate and a water channel, the water inlet and the water outlet are installed on the shell, the water passing plate and the water channel are installed inside the shell, the water channel is connected with the water passing plate, one end of the resistor unit is placed in the water channel, and the cooling liquid sequentially passes through the water inlet, the water passing plate, the water channel and the water outlet. According to the utility model, the water channel is arranged, the integrated flow guide (anti-backflow design) design is adopted in the shell, the cooling liquid passes through the tubular resistor from bottom to top, and the temperature controller and the pressure monitoring instrument are arranged, so that the heat dissipation function is exerted to the utmost extent; by arranging the reinforcing ribs, the pressure bearing capacity of the shell can be enhanced, and the deformation amount of the shell in the working pressure bearing process is reduced.

The invention relates to the technical field of resistance paste, and provides resistance paste and a preparation method thereof. Wherein the resistance paste comprises 75-105 parts of a conductive filler, 0.5-5 parts of a high-temperature heat-resistant agent, 5-15 parts of glass powder and 15-33 parts of an organic carrier; the conductive filler contains nano silver powder. According to the resistance paste provided by the invention, the added conductive filler serves as a core component of the resistance paste and is used for forming a continuous and compact conductive network, and the contained nano silver powder can remarkably reduce the sintering temperature of the resistance paste, promote the sintering compactness and enhance the adhesive force, so that the stability and reliability of a resistor are improved; the high-temperature heat-resistant agent has an extremely high heat-resistant temperature, so that the heat stability, the service life and the reliability of the resistor can be remarkably improved; the glass powder can improve the compatibility of the slurry and a base material, effectively prevents cracking and layering caused by sintering, and can form a more compact protection layer, thereby inhibiting silver oxidation and improving the corrosion resistance of the resistor.

A resistor includes a substrate, a first electrode, a resistive layer, a second electrode, and an insulating layer. The substrate surface has a first side and a second side opposite to each other in a first direction. The first electrode is arranged on the surface of the substrate and comprises a first end portion located on the first side and a first extending portion which is connected with the first end portion and extends towards the second side. The resistive layer is disposed on the first electrode. The second electrode is arranged on the resistance layer and comprises a second end portion located on the second side and a second extending portion which is connected with the second end portion and extends towards the first side. The insulating layer is disposed on the second electrode and covers the first extension portion, the resistive layer and the second extension portion. The resistor has a trench pattern extending in a first direction, the trench pattern extending through the insulating layer, the second electrode, and the resistive layer on a normal to the substrate. The resistor can help to control the resistance value and improve the yield.

This application relates to the field of thermistor materials technology, specifically disclosing a high resistivity, low B-value thermistor material, a chip resistor, and a method for preparing the same. The high resistivity, low B-value thermistor material provided in this application comprises a base material and 2-10% by weight of additives; the base material comprises Mn3O4, Co3O4, SrO, ZnO, and TiO2 in a weight ratio of (10-40):(5-15):(20-60):(5-10):(1-15); the additives comprise CaO, Fe2O3, and SiC in a weight ratio of (5-20):(10-50):(9-35); this application also provides a chip resistor made using the above-mentioned thermistor material. The chip resistor obtained in this application has high resistivity and a low B-value, which can meet the requirements for use in negative temperature coefficient thermistors.

To provide a chip resistor having lower electric resistance and more stable quality.SOLUTION: The chip resistor 1 includes a metallic resistor 10, a first plated electrode 21, and a second plated electrode 22. The metal resistor 10 includes a first bottom plate portion 11, a second bottom plate portion 12, a top plate portion 13, a first inclined leg portion 14, and a second inclined leg portion 15. The first plating electrode 21 is disposed on the bottom surface of the first bottom plate portion 11, the bottom surface of the first inclined leg portion 14, and the bottom surface of the top plate portion 13. The second plating electrode 22 is disposed on the bottom surface of the second bottom plate portion 12, the bottom surface of the second inclined leg portion 15, and the bottom surface of the top plate portion 13.SELECTED DRAWING: Figure 3

The invention discloses a semiconductor piezoresistive device and a preparation method thereof. The preparation method comprises the following steps: cleaning an SOI wafer and depositing a silicon dioxide layer; forming an ohmic contact region and a rectangular piezoresistive region structure through photoetching, etching and heavy doping processes; performing wet etching on the exposed rectangular window part of the piezoresistive region by using a corrosive liquid after photoetching, and forming a hole structure with a trapezoidal longitudinal section in the silicon nano-film; metal is sputtered after photoetching, and annealing is carried out to form ohmic contact; etching the buried oxide layer, performing wet etching on a part of the buried oxide layer, filling photoresist as a supporting structure, and performing undercutting on the residual buried oxide layer to form a large-size hollow silicon nano film; transferring the large-size hollow silicon nano film to a flexible substrate by adopting a double transfer printing method; and finally, printing an electrode and completing packaging. According to the method, the sensitivity and the transfer printing success rate of the silicon nano film are effectively improved through the design of the large-size hollow structure and the photoresist supporting transfer printing process.

This utility model discloses a stable and reliable surface mount resistor, belonging to the field of surface mount resistor technology. It includes a surface mount resistor body, with an upper mounting plate and a lower mounting plate respectively positioned above and below the body. Two sets of support rods are fixedly connected to the upper surface of the lower mounting plate, with the top of each set of support rods contacting the bottom surface of the upper mounting plate. Each set of support rods has a snap-fit ​​groove at its top. Two sets of snap-fit ​​blocks are fixedly connected to the bottom surface of the upper mounting plate. This stable and reliable surface mount resistor, through the coordination of the surface mount resistor body, upper mounting plate, lower mounting plate, support rods, snap-fit ​​grooves, snap-fit ​​blocks, and limiting frame, conveniently and stably utilizes heat dissipation and heating structures to improve the working environment of the surface mount resistor body. Furthermore, by utilizing a heating element, a semiconductor cooling element, and a temperature sensor, it strives to ensure that the surface mount resistor is in a constant temperature environment, thus enabling stable and reliable use of the surface mount resistor.

To provide a multilayer ceramic electronic component capable of improving bias characteristics while maintaining ferroelectricity.SOLUTION: A multilayer ceramic electronic component includes: a dielectric layer that has barium titanate as a main component, and has a core portion and a shell portion covering the core portion, in which calcium is solid dissolved in the shell portion, and includes a plurality of crystal grains in which a calcium concentration in the shell portion is 10 times or more a calcium concentration in the core portion; an internal electrode that is provided with the dielectric layer interposed therebetween, and has nickel or copper as a main component; and an external electrode that is electrically connected to the internal electrode.SELECTED DRAWING: Figure 1

This conductive paste contains: a conductive powder containing copper as the main ingredient; a glass frit; a binder resin; and an organic solvent. The glass frit contains substantially no elemental Zn, and contains, in mass% in terms of the oxides, 40.0-65.0 BaO, 15.0-23.0% B2O3, 2.0-12.0% Al2O3, 4.0-8.0% SiO2, 3.0-7.5% CaO, 2.5-5.0% MnO2, and 10.0-14.0% CuO. The total content of MnO2 and CuO contained in the glass frit is 12.5-17.5%, and the mass ratio of CuO contained in the glass frit with respect to MnO2 contained in the glass frit is 2.0-4.0. The use of this conductive paste makes it possible to manufacture an electronic component that is provided with a highly dense terminal electrode and that has excellent flexural strength.

To provide a multilayer ceramic electronic component that can increase reliability, and a method for manufacturing the same.SOLUTION: A multilayer ceramic electronic component is provided with: a functional part that has internal electrodes stacked in a first direction; a cover part that covers the functional part from the first direction; and a side margin part that covers the functional part from a second direction orthogonal to the first direction. The functional part has, on a predetermined cross section, first straight line parts in contact with the cover part and extending in the second direction, second straight line parts in contact with the side margin part and extending in the first direction, and corner parts connecting the first straight line parts and the second straight line parts. When the distance along the first direction between a first virtual line obtained by extending the first straight line part in the second direction and an end point of the second straight line part on a side of the first virtual line is defined as a, and the distance along the second direction between a second virtual line obtained by extending the second straight line part in the first direction and an end point of the first straight line part on a side of the second virtual line is defined as b, the corner part is curved so as to satisfy the conditions of a≥1 μm and 0.1≤a / b≤0.4.SELECTED DRAWING: Figure 10

The invention relates to a protective device (11) for an electronic component (10), wherein the protective device (11) can be arranged to at least partially encompass the at least one electronic component (10) and an electronic component (10) with such a protective device (11).

The present application provides a resistor for detecting current and a power supply device.SOLUTION: The resistor for detecting current comprises a middle portion, and a first end portion and a second end portion respectively connected to the middle portion, wherein the middle portion comprises a middle portion body including a first side surface and a second side surface opposite to each other, the first end portion and the second end portion are respectively connected to a first extension portion and a second extension portion extending from the middle portion body, the first testing end portion is connected to the first extension portion, and the second testing end portion is connected to the second extension portion. The resistor according to embodiments of the present application reduces the influence of the test contact position on the resistor, and improves the test accuracy while ensuring the connection between the resistor and the voltage testing device.SELECTED DRAWING: Figure 1

Provided is a copper-manganese-nickel based alloy having characteristics (in particular, specific resistance) close to those of a nickel-chromium based alloy. It is also an objective to provide an alloy having high processability compared to a nickel-chromium based alloy. An alloy for a resistive body includes copper, manganese, and nickel, wherein the manganese is 33 to 38% by mass, and the nickel is 8 to 15% by mass.

The invention discloses a pi-shaped chip high-voltage pulse attenuation network resistor and a manufacturing method thereof, and belongs to the technical field of electronic components. The network resistor structure comprises a ceramic substrate, a resistive layer, a resistive layer R1, a resistive layer R2, a resistive layer R3, a surface electrode, a back electrode, a side electrode, an electrode nickel-plated layer, an electrode lead-tin-plated layer, a glass protection layer and an epoxy resin layer. The manufacturing method comprises the following steps: printing a surface electrode on the upper surface of a ceramic substrate, printing a back electrode on the lower surface of the ceramic substrate, printing a resistive layer bridged on the surface electrode, printing protective glass on the resistive layer, carrying out laser resistance trimming on the resistive layer, printing an epoxy resin protective layer and a mark on the protective glass, and sputtering a metal layer on the end surface. And preparing an electrode nickel-plated layer and a lead-tin-plated layer on the end surface. The problems that in the prior art, overheat burnout is likely to occur, electrodes are likely to be eroded in a humid or sulfur-containing environment, and the manufacturing precision and stability are difficult to improve and control are solved. The resistor is widely applied to the technical field of attenuation network resistors.

To provide a resistor chip capable of improving dielectric strength.SOLUTION: A resistor chip 10 includes an insulating member 20 and a resistive element 30 provided on the insulating member 20. The resistive element 30 includes an insulator 31 and a resistive layer 40 provided within the insulator 31. The insulating member 20 includes an insulating substrate 21 made of glass or sapphire.SELECTED DRAWING: Figure 5

The present invention comprises a sensor array (100, 110, 120) comprising: at least one grid of nanogranular sensor elements (20) deposited on a substrate (10, 12, 14); and at least one grid of electrodes (30) electrically connected to the nanogranular sensor elements (20) to enable the measurement of conductivity changes of each individual nanogranular sensor element (20), and a corresponding manufacturing process.

The utility model provides a chip resistor. The chip resistor comprises a substrate, a back electrode, a front electrode, a resistive layer, a protective layer and a side electrode, the protective layer comprises a first protective layer and a second protective layer; the first protective layer is made of a glass material, and the second protective layer is made of at least two layers of epoxy resin materials; a third protective layer is formed on the left electrode and the right electrode which are not covered, and the third protective layer is made of a resin silver material; through a multi-layer protection structure formed by the first protection layer made of the glass material and the second protection layer made of the epoxy resin material, invasion of moisture, chemical corrosion and mechanical damage is effectively prevented, the service life of the resistor in a severe environment is remarkably prolonged, and particularly, through the third protection layer made of the resin silver material, the service life of the resistor is prolonged. The anti-corrosion performance of the electrode part is enhanced, so that the resistor can keep stable electrical performance during long-time work.

To provide: a thick film resistor paste for resistors, which is excellent in surge resistance with a smaller resistance change rate for an electronic component that is reduced in size furthermore; a thick film resistor using the thick film resistor paste; and an electronic component including the thick film resistor.SOLUTION: Provided is a thick film resistor paste containing a conductive particle, glass powder, an organic vehicle, and an additive. The additive contains at least one of zinc oxide or silicon oxide, and the content of the zinc oxide and the content of the silicon oxide which are added as the additive each are 1 mass% or more and 19 mass% or less with respect to 100 mass% of the glass powder.SELECTED DRAWING: None

To provide a resistor paste capable of achieving both high resistivity and low TCR of a resistor.SOLUTION: The resistor paste includes metal particles, insulating particles, glass particles, and metal silicide. The metal particles contain copper and nickel. The insulating particles contain at least one of alumina, zirconia, zinc oxide, and boron nitride. A chip resistor 1 includes a resistor 13 and a substrate 11. The resistor 13 is formed on the substrate 11 using the above-mentioned resistor paste as a material.SELECTED DRAWING: Figure 1

The invention discloses a chip thermistor. The chip thermistor comprises a ceramic body, a coating layer, two external electrodes and a plurality of internal electrodes, the ceramic body comprises a plurality of ceramic layers which are stacked in the first direction, the outer surface of the ceramic body is coated with the coating layer, and the two external electrodes are arranged on the ceramic body. The internal electrode is disposed in the ceramic body, and the surface area S1 on the ceramic layer and the surface area S of the ceramic layer satisfy 0.1 S < = S1 < = 0.5 S. According to the area proportion design, the electrical yield is guaranteed, meanwhile, an enough ceramic matrix bonding area is reserved, and the cracking risk can be reduced. Meanwhile, the coating layer can serve as a protective barrier to block electroplating liquid and water vapor, the corrosion and overplating phenomena are effectively improved, and the structural strength of the device is improved. In addition, the invention also discloses electronic equipment with the chip thermistor.

The application provides a temperature sensor and a manufacturing method thereof. The manufacturing method of the temperature sensor comprises the following steps: sleeving a first hot-melt sleeve on the wire skin surface of a plurality of wires respectively, and the first hot-melt sleeve is slidably connected with the corresponding wire; connecting a plurality of pins of a thermistor with the wire core of the plurality of wires one by one, welding another part of the connecting area of the wire core and the pin to form a welding area; sliding the first hot-melt sleeve so that the first hot-melt sleeve is sleeved on the welding area, and sleeving a second hot-melt sleeve on the outside of the thermistor; sleeving a heat-shrinkable sleeve on the outside of the second hot-melt sleeve and the first hot-melt sleeve, performing first heat treatment, so that the second hot-melt sleeve and the plurality of first hot-melt sleeves are fused into a hot-melt layer, the heat-shrinkable sleeve is shrunk, the inner surface of the heat-shrinkable sleeve is fused into the hot-melt layer, and a temperature sensor is formed. The application can improve the sealing performance of the joint between the wire and the thermistor, and further improve the reliability and service life of the temperature sensor.

The invention relates to the technical field of thin film resistors, in particular to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor and the metal film resistor. The invention relates to a self-adaptive magnetron sputtering preparation method of a wide-temperature-range low-TCR metal film resistor, which comprises the following steps: carrying out magnetron sputtering treatment on the surface of a base material by using a target material and adopting a magnetron sputtering method; the magnetron sputtering treatment comprises the following reaction steps: performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen or oxygen as reaction gas, and forming a first metal resistive film on the surface of the base material; performing magnetron sputtering treatment on the surface of the base material by taking argon as sputtering gas and taking nitrogen and / or oxygen as reaction gas, and forming a second metal resistive film above the first metal resistive film; according to the metal film resistor prepared from the treated base material, the temperature coefficient TCR of the metal film resistor in a wide temperature range from-55 DEG C to 125 DEG C meets the following conditions: the TCR difference value in a positive temperature range is 0-5 ppm / DEG C; and the absolute value of the TCR difference value of the positive and negative temperature zones is less than or equal to 5ppm / DEG C.

The application discloses a surface-mounted radio frequency load sheet with a signal coupling port, comprising: an aluminum nitride ceramic substrate, a front conductor circuit, a thick film resistor, a back conductor circuit, a glaze protective film, a dielectric protective film, a product input electrode position mark and a front-back conductor connecting circuit. The radio frequency load sheet is manufactured by using the application, and a signal coupling output electrode is innovatively added on the basis of a traditional radio frequency load sheet. The signal coupling output electrode can be used to monitor the intensity of an input signal, so as to monitor the working state of equipment. The combination function of an existing radio frequency coupler and a radio frequency load is realized, and the demand of miniaturization and cost reduction of equipment is met. Compared with a traditional radio frequency attenuating sheet, only one thick film resistor is used, the product has good heat conduction, the circuit layout is simple, the manufacturing process is simplified, and the production cost is greatly reduced.

The utility model discloses a high-voltage thick-film ceramic resistor, which comprises a resistor, two ends of the resistor are symmetrically and fixedly connected with fixing frames, one side of each fixing frame is provided with a positioning hole, two sides of the resistor are symmetrically provided with fixing assemblies used for fixing the positions of the fixing frames, each fixing assembly comprises a mounting seat arranged at the bottom of the corresponding fixing frame, and the mounting seats are fixedly connected with the resistor. A limiting block is connected into the positioning hole in a penetrating mode, a positioning block is fixedly connected to the top end of the limiting block, and a fixing piece used for limiting the moving direction of the limiting block is arranged on one side of the limiting block. Through the design of the mounting seat, the limiting block, the positioning block, the fixed part and the movable part, the arranged limiting block is matched with the positioning hole formed in the fixed frame, the width of the arranged positioning block is larger than that of the positioning hole, and the position of the fixed frame is fixed through the positioning block which cannot be used upwards; and the situation that the fixing frame is directly fixed through a bolt when the position of the fixing frame is fixed is avoided.

The invention belongs to the technical field of electronic paste, and particularly relates to resistance paste and a preparation method thereof. The resistance paste comprises an inorganic component and an organic component; the inorganic component comprises a conductive material and a glass material; the organic component comprises organic silver and resin; the conductive material comprises at least one of ruthenium-containing oxide, copper, nickel, copper-nickel alloy, palladium, platinum and metal boride. The organic silver is introduced into the resistance paste, so that the dispersion effect of the organic silver in the resistance paste is improved; in the sintering process of the resistance paste, organic silver is decomposed in situ to generate nano-silver, and the nano-silver can be attached to a conductive material to cover a core and grow to form a co-melt, so that the sintering activity of the conductive material is improved, and the sintering temperature sensitivity and shape retention of the resistance paste are effectively improved; and the resistor paste can meet the application requirements of resistors with small sizes and wide resistance value intervals.

The invention discloses low-temperature curing slurry for a thick film hybrid circuit and a preparation method of the low-temperature curing slurry, and relates to the technical field of electronic slurry. Wherein the organic carrier comprises 35 to 55 weight percent of thermosetting resin and 45 to 65 weight percent of solvent; the thermosetting resin comprises at least two of epoxy resin, modified epoxy resin and organosilicon modified polyester resin, the epoxy resin is bisphenol A type solid resin, and the modified epoxy resin is an alkoxy siloxane modified product with an epoxy functional group. According to the invention, at least two of epoxy resin, modified epoxy resin and organosilicon modified polyester resin are adopted as matrix resin, the epoxy resin is bisphenol A type solid resin, a body network structure is formed after curing and crosslinking, the crosslinking density is high, the modified epoxy resin is an alkoxy siloxane modified product with an epoxy functional group, and the curing strength is high. Alkoxy siloxane contained in the resin can improve the adhesive force in the curing process, and in addition, the leveling property of the slurry can be improved.

A monitoring arrangement for monitoring a surge through a surge arrester, the surge arrester being adapted to be connected to a power network in order to protect an electrical equipment of the power network against incoming surges passing through the surge arrester. The monitoring arrangement detects a reignition surge, which reignition surge has been occasioned by a switching of a circuit breaker. The monitoring arrangement further calculates the number of detected reignition surges.