48results about "Non-adjustable resistors" patented technology

This application relates to the field of thermistor materials technology, specifically disclosing a high resistivity, low B-value thermistor material, a chip resistor, and a method for preparing the same. The high resistivity, low B-value thermistor material provided in this application comprises a base material and 2-10% by weight of additives; the base material comprises Mn3O4, Co3O4, SrO, ZnO, and TiO2 in a weight ratio of (10-40):(5-15):(20-60):(5-10):(1-15); the additives comprise CaO, Fe2O3, and SiC in a weight ratio of (5-20):(10-50):(9-35); this application also provides a chip resistor made using the above-mentioned thermistor material. The chip resistor obtained in this application has high resistivity and a low B-value, which can meet the requirements for use in negative temperature coefficient thermistors.

This utility model discloses a stable and reliable surface mount resistor, belonging to the field of surface mount resistor technology. It includes a surface mount resistor body, with an upper mounting plate and a lower mounting plate respectively positioned above and below the body. Two sets of support rods are fixedly connected to the upper surface of the lower mounting plate, with the top of each set of support rods contacting the bottom surface of the upper mounting plate. Each set of support rods has a snap-fit ​​groove at its top. Two sets of snap-fit ​​blocks are fixedly connected to the bottom surface of the upper mounting plate. This stable and reliable surface mount resistor, through the coordination of the surface mount resistor body, upper mounting plate, lower mounting plate, support rods, snap-fit ​​grooves, snap-fit ​​blocks, and limiting frame, conveniently and stably utilizes heat dissipation and heating structures to improve the working environment of the surface mount resistor body. Furthermore, by utilizing a heating element, a semiconductor cooling element, and a temperature sensor, it strives to ensure that the surface mount resistor is in a constant temperature environment, thus enabling stable and reliable use of the surface mount resistor.

The invention discloses a chip thermistor. The chip thermistor comprises a ceramic body, a coating layer, two external electrodes and a plurality of internal electrodes, the ceramic body comprises a plurality of ceramic layers which are stacked in the first direction, the outer surface of the ceramic body is coated with the coating layer, and the two external electrodes are arranged on the ceramic body. The internal electrode is disposed in the ceramic body, and the surface area S1 on the ceramic layer and the surface area S of the ceramic layer satisfy 0.1 S < = S1 < = 0.5 S. According to the area proportion design, the electrical yield is guaranteed, meanwhile, an enough ceramic matrix bonding area is reserved, and the cracking risk can be reduced. Meanwhile, the coating layer can serve as a protective barrier to block electroplating liquid and water vapor, the corrosion and overplating phenomena are effectively improved, and the structural strength of the device is improved. In addition, the invention also discloses electronic equipment with the chip thermistor.

The objective is to provide a step-absorbing paste that can improve adhesion between the step-absorbing pattern layer and the inner green sheet, as well as improve handling during operation. [Solution] A step-absorbing paste comprising a first ceramic powder, ethyl cellulose, and terpene phenol, wherein A1 is 10 to 26 parts by mass, where A1 is the total content of ethyl cellulose and terpene phenol in the step-absorbing paste when the content of the first ceramic powder in the step-absorbing paste is 100 parts by mass, the average mass molecular weight of the terpene phenol is 220 to 650, and when the total content of ethyl cellulose and the terpene phenol is 100 parts by mass, the content of terpene phenol is 30 to 67 parts by mass.

The objective of the present invention is to provide a low-power instrument transformer having a temperature compensation function, in which a circuit whose output is adjusted according to a temperature is added to the inside of a signal converter without additionally implementing the temperature compensation function in a merge unit. The low-power instrument transformer having a temperature compensation function, according to one embodiment of the present invention, may comprise: a detection unit for detecting a voltage of an object to be measured; and a temperature compensation unit for compensating for a change, according to temperature, in voltage information measured by the detection unit, and outputting same to the merge unit.

The utility model discloses a kind of high-efficiency heat dissipation resistance bimetallic strip, it is related to bimetallic strip technical field, including upper metal sheet, the bottom of the upper metal sheet is equipped with lower metal sheet, and the inside of the upper metal sheet and lower metal sheet is equipped with inner metal sheet, the side of the upper metal sheet is equipped with connecting plate, the inside of the connecting plate is fixedly connected with connecting column, the inside of the connecting column is threadedly connected with fixed bolt one, the side of the inner metal sheet is fixedly connected with heat-conducting sheet, the utility model is equipped with inner metal sheet inside the upper metal sheet and lower metal sheet, inner metal sheet inside fixedly connected heat-conducting sheet can absorb the heat on inner metal sheet, upper metal sheet and lower metal sheet inside the arc-shaped groove inside and heat-conducting sheet are clamped, the copper sheet of arc-shaped groove inside is in contact with heat-conducting sheet, heat is quickly discharged by radiating bump one and radiating bump two, improve the heat dissipation of resistance bimetallic strip.

The application relates to the field of thin-film resistors, and discloses a flexible precision thin-film resistor and a manufacturing method thereof. The manufacturing method of the flexible precision thin-film resistor comprises the following steps: performing oxidation treatment on a silicon substrate to form an insulating layer on the surface of the silicon substrate; forming a resistor layer and an electrode layer on the insulating layer; performing pattern treatment on the resistor layer to form a resistor pattern; performing laser resistance adjustment on the resistor pattern to adjust the resistance value of the resistor pattern; forming a flexible protective layer on the resistor pattern after the resistance adjustment; and performing thinning treatment on the silicon substrate. The silicon substrate is used as a resistor substrate, the substrate is thinned to 15 microns after the resistor layer and the protective layer are formed, the product has excellent flexibility, and is suitable for flexible circuits; the nickel-chromium alloy is selected as the resistor layer, vacuum sputtering and heat treatment are combined, the temperature coefficient is less than or equal to 10 ppm / DEG C in the range of -40 DEG C to 70 DEG C; the polyimide flexible protective layer is adopted, protection is achieved, and the bending performance is not affected; the resistance value precision is less than or equal to 0.02% through laser resistance adjustment, and the high-precision requirement is met.

A magnetic sensor includes at least one MR element and a coil. The coil includes at least one conductor portion. The at least one conductor portion is each located at a position such that a partial magnetic field generated by the conductor portion is applied to one of the at least one MR element, the one corresponding to the conductor portion, and extends along an imaginary curve curving to protrude in a direction away from the corresponding MR element.

The application provides a preparation method of a thick film low resistance resistor based on Ts gradient and three simultaneous principles, and is particularly applied to the field of low resistance (0.01-5 ohms / square). In view of the technical problems of high cost, narrow process window and poor interface reliability of the Ag-Pd-RuO2 ternary noble metal system in the prior art, the application adopts an Ag / Pd porous conductive network to replace the traditional ternary system, designs a gradient temperature sintering process based on the glass softening point gradient matching principle (Ts_G1<Ts_C1<Ts_R), constructs a three-dimensional porous conductive structure through high-length-diameter-ratio flaky silver, and realizes precise regulation and control of the temperature coefficient by combining a nano-palladium surface modification technology. On the premise of completely abandoning the high-cost noble metal RuO2, the application improves the interface matching, improves the device reliability, and realizes the cost reduction and performance improvement of the low resistance end thick film resistor paste.

To provide an electronic component that can suppress the occurrence of cracks in high-temperature and high-humidity environments. [Solution] An electronic component having an element body containing an insulating layer and an electrode layer. The concentration of Mn in the central region of the electrode layer, located near the center of the element body, is higher than the concentration of Mn in the terminal region of the electrode layer, located near the end face of the element body.

This invention relates to the field of thermistor manufacturing technology, and discloses an automatic frame-mounting, glue-filling, and baking production line and method. It includes a conveyor, fixtures, and auxiliary mechanisms. The auxiliary mechanisms include a dispensing robot, a feeding guide rail, a frame-mounting device, a tunnel drying oven, a glue-filling robot, a mounting base, a locking device, and a CCD camera. During processing, multiple thermistor PCB boards are first fixed using fixtures, arranged in a uniformly spaced line. This application uses a conveyor for automatic fixture transport, and through the cooperation of the dispensing robot, frame-mounting device, tunnel drying oven, and glue-filling robot, dispensing, frame-mounting, drying, and glue-filling can be performed sequentially in a continuous process, resulting in higher production efficiency and improved processing efficiency for the installation of the thermistor frame.

The present invention provides: a multilayer ceramic electronic component precursor which is formed of a multilayer body wherein green sheets and internal electrode precursor layers are alternately stacked repeatedly, and which is suppressed in the occurrence of interlayer separation or breakage of the internal electrode precursor layers if this multilayer ceramic electronic component precursor is cut by the application of an external force by means of press cutting or the like; and a method for producing a multilayer ceramic electronic component, the method using this multilayer ceramic electronic component precursor.　With respect to this multilayer ceramic electronic component precursor, wherein the green sheets and the internal electrode precursor layers are alternately stacked repeatedly, an aliphatic polycarbonate resin is used as a binder resin that is contained in the green sheets; and a cellulose acylate resin having a specific structure is used as a matrix resin that is contained in the internal electrode precursor layers.

This invention discloses a method for manufacturing an electronic component, the electronic component itself, and a thin-film resistor. The method for manufacturing the electronic component includes: forming a through-hole in a ceramic substrate; forming a resistive film on one side of the ceramic substrate; forming a metal layer on both sides of the ceramic substrate, the metal layer covering a portion of the resistive film, and a portion of the metal layer located within the through-hole; forming a conductive structure on one side of the metal layer, a portion of the conductive structure forming a first electrode, a second electrode, and a circuit structure on one side of the ceramic substrate; forming a third electrode on the other side of the conductive structure, the third electrode being electrically connected to the first electrode, the second electrode, or the circuit structure; forming an insulating protective layer on one side of the resistive film to cover the portion of the resistive film not covered by the metal layer; and forming an auxiliary welding structure on one side of the second electrode.

A columnar resistor and a method of laser trimming for manufacturing the same are provided. The columnar resistor includes a resistance layer disposed on the surface of a columnar substrate and the resistive layer includes a resistance determining area, a first resistance adjustment area, and a second resistance adjustment area. The resistance determining area is configured to form a first laser-trimming line and achieve a first resistance value by a first laser-trimming. The first resistance adjustment area is configured to form a second laser-trimming line and achieve a second resistance value by a second laser-trimming. The resistance value is precisely adjusted by two laser-trimming processes of the resistive layer, thereby improving the stability of product manufacturing.

The utility model discloses a 100W angle sheet porcelain shell resistor, especially relates to resistor structure field, including the resistor shell body and ceramic closure made of ceramic, both cooperation uses, and the inside symmetry of resistor shell body inserts electrode angle sheet, and the perforation of electrode angle sheet is set up on the closure and lets electrode angle sheet pass, and the resistance core is placed between two electrode angle sheets, and the alloy wire is uniformly wound on the resistance core, and the inner chamber of electrode angle sheet is filled with the encapsulation material, and the resistor shell body is the porcelain shell that the ceramic sintering of the alumina content in 45%~95%, and the alumina content of resistance core is 95%, because ceramic is an excellent electrical insulating material, and using ceramic as the shell body can provide good electrical insulation performance, increases the safety and reliability of resistor, uses ceramic as the shell body, avoids the short circuit problem between the shell body and electrode after alloy wire fusing after product short circuit, and also saves the production line of the insulating sheet that sets up alone, saves the cost simultaneously and also need not consider assembly error.

Disclosed is a shunt resistor comprising: a resistive element; a first conductive plate and a second conductive plate that are respectively connected to both ends of the resistive element in the longitudinal direction; and a first voltage detection terminal and the second voltage detection terminal that are connected to the first conductive plate and the second conductive plate, respectively. The first conductive plate includes two first fastening holes (a 1-1 fastening hole and a 1-2 fastening hole) and two first cut portions (a first cut portion in the longitudinal direction and a first cut portion in the width direction). The second conductive plate includes two second fastening holes (a 2-1 fastening hole and a 2-2 fastening hole) and two second cut portions (a second cut portion in the longitudinal direction and a second cut portion in the width direction). According to the present invention, the TCR value can be optimally adjusted according to the length and position of the cut portion of the shunt resistor.

The present application provides a kind of flattening resistance element and its manufacturing method, it includes a substrate, a resistance layer and an electrode layer, the present application solves the problem of impedance increase and product characteristic anomaly caused by improper joint of the interface of electrode layer and resistance layer, including after the completion of electrode layer process, by using laser or grinding to eliminate the height difference of interface and process the structure of electrode layer profile discontinuity.

The application discloses a composite metal foil and a metal-clad laminate, the composite metal foil comprising a substrate layer, a transition layer and a thermistor layer which are sequentially stacked; the transition layer is an electrically conductive amorphous film, and the sheet resistance of the transition layer is less than or equal to 50 Ω / □. By arranging the transition layer between the substrate layer and the thermistor layer, and the transition layer being an electrically conductive amorphous film, a completely uniform surface without grain boundary interference can be provided, the influence of the crystal lattice of the substrate layer is blocked, the resistance uniformity of the thermistor layer is effectively improved, internal stress can be released, and the problem of internal stress concentration can be avoided; in addition, by limiting the sheet resistance of the transition layer to be less than or equal to 50 Ω / □, it can be ensured that the substrate layer forms a resistance circuit with the thermistor layer through the transition layer after etching the window, and the resistance characteristics of the thermistor layer can be avoided from being affected, so that the stability of the thermosensitive characteristics of the thermistor layer is improved, and the high-precision temperature sensing requirement can be met.

A columnar resistor and a method of laser trimming for manufacturing the same are provided. The columnar resistor includes a resistance layer disposed on the surface of a columnar substrate and the resistive layer includes a resistance determining area, a first resistance adjustment area, and a second resistance adjustment area. The resistance determining area is configured to form a first laser-trimming line and achieve a first resistance value by a first laser-trimming. The first resistance adjustment area is configured to form a second laser-trimming line and achieve a second resistance value by a second laser-trimming. The resistance value is precisely adjusted by two laser-trimming processes of the resistive layer, thereby improving the stability of product manufacturing.

This invention relates to the technical field of resistors, specifically to a high-quality surge-resistant and sulfide-resistant wafer resistor and its preparation method. The resistor comprises a white substrate, a resistive layer, a protective layer, and an electrode assembly. The white substrate is an alumina ceramic substrate with a thickness of 0.2-0.6 mm. The resistive layer is formed by sintering ruthenium-based thick-film resistive paste and is disposed between the protective layer and the white substrate. The electrode assembly includes a first front electrode, a second front electrode, a back electrode, and a side electrode. The first front electrode, the second front electrode, and the back electrode are all elongated plates. The white substrate is located between the first front electrode and the back electrode, and the contact area between the first front electrode and the upper surface of the white substrate is not less than 1 / 4 of the upper surface area of ​​the white substrate. One side of the second front electrode is in close contact with the first front electrode. This invention reduces the contact channel between sulfide gas and the electrodes, significantly improving the service life of the resistor in harsh environments.

This invention relates to the field of resistor technology, specifically to a high power density power resistor with a wide resistance range. It includes a housing and multiple resistor units stacked within the housing. Each resistor unit includes an insulating support substrate and a resistor sheet encased within the support substrate. The resistor sheet has conductive portions bent at both ends, extending to the outer surface of the support substrate. Adjacent resistor units are connected via these conductive portions. An air duct is provided between the support substrates of adjacent resistor units. The high power density allows the resistor unit spacing to be adjusted within any range based on the thickness of the support substrate, enabling forced air cooling heat exchange and minimizing the volume to the theoretical minimum. It also offers higher protection levels and corrosion resistance, achieving high levels of waterproofing and dustproofing; and meets the high requirements for large creepage distances and clearances even under high voltage conditions.

The present invention relates to a safety device for surge protection devices. [Solution] The safety device 10 has a housing 16 in which a horn gap 24 is located, and the horn gap has two electrodes 26, 28 separated from each other by a gap 32 in the ignition section 30. The safety device has an adjustment mechanism 40 configured to increase the dielectric strength of the safety device by increasing the gap between the electrodes and / or the ignition gap 39. The adjustment mechanism is coupled to an actuation mechanism 64 configured to be operated manually or to be operated automatically as a result of at least one actuation event. The present invention further relates to an assembly comprising a safety device and a surge protection device.

The present application provides a kind of high temperature resistance resistance element, it includes: a substrate layer, a first surface electrode layer and second surface electrode layer.The first surface electrode layer is arranged in the first surface of the substrate layer, the resistance layer is partially covered on the first electrode layer and the substrate layer, the second surface electrode layer is arranged in alignment with the first surface electrode layer and covered on the first surface electrode layer and the resistance layer, so that the resistance layer is clamped between the first electrode layer and the second electrode layer, the first surface electrode layer, the resistance layer and the second surface electrode layer form composite structure to inhibit the resistance value variation of the high temperature resistance resistance element at high temperature.

This application provides a packaging structure for a power semiconductor module, including a substrate and multiple semiconductor chips. The substrate includes a first conductive layer, an insulating layer, and a second conductive layer stacked sequentially. Multiple semiconductor chips are disposed on the second conductive layer. The second conductive layer is divided into multiple conductive regions, which, together with the multiple semiconductor chips, form a first switching topology, a second switching topology, and a third switching topology. Specifically, the packaging structure of the power semiconductor module provided in this application integrates the first, second, and third switching topologies. Compared to existing electronic switches composed of discrete devices, it features smaller size, lower parasitic inductance, and better consistency, thereby improving switching performance.

The multilayer electronic component includes a laminate in which internal electrodes and dielectric layers are alternately laminated, a base electrode, and an external electrode. The internal electrodes include a first internal electrode and a second internal electrode. The base electrode includes a first base electrode and a second base electrode. The external electrode includes a first external electrode and a second external electrode. Each of the first base electrode and the second base electrode contains a plurality of sintered bodies made of dielectric particles. At least a part of the plurality of sintered bodies is located at the interface between each base electrode and the laminate.

The present disclosure provides a preparation method of a tantalum nitride film, and belongs to the technical field of semiconductors. The preparation method comprises the following steps: providing a primary etching solution, the primary etching solution being used for dissolving an oxide; immersing a tantalum nitride sample in the primary etching solution; providing a secondary etching solution, the secondary etching solution being a mixed solution of ammonia, hydrogen peroxide and pure water; and immersing the tantalum nitride sample in the secondary etching solution to obtain a tantalum nitride film by etching. The present disclosure can effectively control the etching rate of the tantalum nitride film and improve the etching uniformity of the tantalum nitride film.

The invention discloses a carbon ceramic closing resistor for a high-voltage circuit breaker and a preparation method of the carbon ceramic closing resistor, and belongs to the technical field of power elements. The problems of poor resistor compactness, non-uniform performance, insufficient mechanical property and the like caused by high pressing and sintering difficulty, process instability and high and non-uniform resistor porosity of the carbon ceramic resistor are solved. The preparation process of the resistor comprises the following steps: by taking aluminum oxide and quartz as ceramic phases, presintered kaolin, mullite and potassium feldspar as clay phases and carbon black or graphite as conductive phases, pre-coating the ceramic phases with the clay phases, carrying out vacuum calcination on pre-coated powder, mixing the pre-coated powder with the secondarily added clay phases and the conductive phases, carrying out spray granulation, pressing a green body, sintering and spraying. And obtaining the carbon ceramic closing resistor. According to the invention, the kaolin is pre-sintered, and the clay phase is pre-coated with the ceramic phase, so that the subsequent blank pressing uniformity and density are increased, the structural defects of the carbon ceramic resistor are reduced, and in combination with the spark plasma sintering technology, the batch rapid production of the resistor can be realized.