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Implantable joint prosthesis

The invention relates to a surgical implant that provides an artificial diarthroidal-like joint, suitable for use in replacing any joint, but particularly suitable for use as an intervertebral disc endoprosthesis. The invention contains two rigid opposing shells, each having an outer surface adapted to engage the surfaces of the bones of a joint in such a way that the shells are immobilized by friction between their outer surfaces and the surfaces of the bone. These outer surfaces are sufficiently rough that large frictional forces strongly resist any slippage between the outer surface and the bone surfaces in the joint. They may be convex, and when inserted into a milled concavity, are immediately mechanically stable. Desirably, the outer surfaces of the shells are adapted to allow for bony ingrowth, which further stabilizes the shells in place. The inner surfaces of the shells are relatively smooth, and adapted to slide easily across a portion of the outer surface of a central body disposed between the shells. The central body has a shape that cooperates with the shape of the inner surface of the shell so as to provide a range of motion similar to that provided by a healthy joint. A flexible sheath extends between edges of the opposing shells. The inner surface of this sheath, together with the inner surfaces of the rigid shells, defines a cavity encasing the central body. At least a portion of this cavity is filled with a fluid lubricant, further decreasing the frictional force between inner surfaces of the shell and the surface of the central body.

Symmetrically and asymmetrically stacked transistor group RF switch

A silicon-on-insulator (SOI) RF switch adapted for improved power handling capability using a reduced number of transistors is described. In one embodiment, an RF switch includes pairs of switching and shunting stacked transistor groupings to selectively couple RF signals between a plurality of input / output nodes and a common RF node. The switching and shunting stacked transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. In one embodiment, the transistor groupings are “symmetrically” stacked in the RF switch (i.e., the transistor groupings all comprise an identical number of transistors). In another embodiment, the transistor groupings are “asymmetrically” stacked in the RF switch (i.e., at least one transistor grouping comprises a number of transistors that is unequal to the number of transistors comprising at least one other transistor grouping). The stacked configuration of the transistor groupings enable the RF switch to withstand RF signals of varying and increased power levels. The asymmetrically stacked transistor grouping RF switch facilitates area-efficient implementation of the RF switch in an integrated circuit. Maximum input and output signal power levels can be withstood using a reduced number of stacked transistors.
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