20results about How to "Improve light output" patented technology

The invention discloses a crystal compound, a preparation method thereof and application of the crystal compound in X-ray detection, imaging and anti-counterfeiting encryption, and belongs to the technical field of crystals. The molecular formula of the crystal compound is [Cu (totp) (CH3CN) 3] [Cu2I3 (totp) (PN)]. (CH3CN), wherein totp is tris (o-tolyl) phosphine; and PN is diphenyl-2-pyridine phosphine. The crystal compound disclosed by the invention is simple in preparation method, and has the characteristics of large mass attenuation coefficient of X-ray energy, high light yield and low detection limit when being used as a material of an X-ray detector. The compound also has the characteristic of structural transformation in solvents such as methanol, ethanol, acetone, dichloromethane, tetrahydrofuran and the like, and meanwhile, the conversion of luminescence color under the excitation of 365nm ultraviolet light and X rays is accompanied. The material can be applied to the aspects of scintillator materials, room-temperature X-ray radiation indirect detection materials, radiation detection dosimeters, X-ray scintillator medical imaging, anti-counterfeiting encryption and the like.

A semiconductor laser element, a semiconductor laser device, a manufacturing method thereof, and a gas analysis device. A distributed feedback semiconductor laser element (3) has a diffraction grating (3M) formed on a waveguide path (3L), stably outputs light of a single mode, and increases the intensity of the light. The waveguide path (3L) includes a diffraction grating portion (301) in which the diffraction grating (3M) is formed, and a flat portion (302) having a region in which the diffraction grating (301) is not formed and which is wider than the diffraction grating portion (301). The flat portion (302) has a connecting portion (303) having a region in which the width continuously changes toward a connecting position with the diffraction grating portion (301). A high reflection film (HR) is provided on an end surface of the flat portion (302) on the opposite side from the connecting portion (303), and a low reflection film (AR) is provided on an end surface of the diffraction grating portion (301) on the opposite side from the connecting portion (303).

This invention provides a display panel and display device, comprising: a substrate, a planarization layer, an anode layer, and a pixel definition layer stacked sequentially. The pixel definition layer includes a flat region, several exposed opening regions, and a ramp region disposed between the flat region and the opening regions. The opening regions expose the central region of the anode layer. A light-emitting layer is patterned in the opening regions, on the side of the anode layer facing away from the substrate. A reflective layer is patterned in the side of the pixel definition layer facing away from the substrate, and the reflective layer only exposes the light-emitting layer. At least a portion of the emitted light from the light-emitting layer is reflected by the local reflective layer and guided in a direction perpendicular to the substrate. A transparent cathode layer is formed on the side of the light-emitting layer and the reflective layer facing away from the substrate. This invention solves the problem of light escaping or being absorbed through the pixel definition layer, guiding the emission direction of laterally emitted light to a vertical direction, thereby improving the light extraction efficiency.

The invention relates to scintillator glass melted in a high-concentration hydrogen atmosphere and a preparation method and application thereof. The preparation method comprises the following steps: preparing raw materials and mixing the raw materials; charging and melting in a high-concentration hydrogen atmosphere: charging the powder into a high-purity alumina crucible, then putting the crucible into a hearth of a high-concentration hydrogen atmosphere furnace, vacuumizing, introducing mixed gas into the high-concentration hydrogen atmosphere furnace, controlling the total flow of the mixed gas, and melting in the high-concentration hydrogen atmosphere furnace, when the pressure in the hearth is in a micro-positive pressure state, opening a one-way stop valve, controlling tail gas emission, starting an atmosphere furnace heating system, and heating, preserving heat and founding for a certain time; clarifying and homogenizing; molding by casting and annealing; and processing to obtain the scintillator glass. According to the invention, efficient formation and uniform dispersion of Ce < 3 + > are guaranteed through sufficient reduction, and finally, the scintillator glass reaches better levels in transmittance, light yield, decay time and irradiation resistance.

The application provides a high beam module and a vehicle lamp. The high beam module comprises a light source for emitting light; a high beam lens arranged on the light emitting side of the light source, the high beam lens being an integral structure, the high beam lens comprising a light inlet surface, a first total reflection surface, a second total reflection surface, a third total reflection surface and a light outlet surface, the second total reflection surface and the third total reflection surface being oppositely arranged along a first direction, the light outlet surface being located on one side of the third total reflection surface along a second direction, the light emitted by the light source being projected to the first total reflection surface through the light inlet surface, the parallel light being formed after being reflected by the first total reflection surface, the parallel light being reflected by the second total reflection surface and the third total reflection surface in sequence, and the parallel light being emitted by the light outlet surface to form a high beam light pattern; the light outlet surface comprises a plurality of sub-light outlet surfaces arranged in sequence along a third direction, and the distance between the root of each sub-light outlet surface and the light source along the second direction gradually increases along the third direction. The application can improve the light efficiency of the high beam module while ensuring the narrow opening size.

The utility model provides an LED packaging structure and a lamp bead, the LED packaging structure comprises a bowl cup support, the bowl cup support is internally provided with a light-emitting chip, a reflection part and at least two fluorescent layers, the light-emitting chip is located on the bottom wall of the bowl cup support, the at least two fluorescent layers sequentially cover the side, away from the bowl cup support, of the light-emitting chip, and the reflection part is located on the bottom wall of the bowl cup support. The excitation wavelengths are sequentially decreased along the direction far away from the light-emitting chip; the reflecting part is at least arranged on the inner side wall of the bowl-cup support, and the reflectivity of the reflecting part is larger than that of the bowl-cup support. Therefore, through the high reflectivity of the reflecting part, the light absorption of the bowl cup support can be reduced, the light emitting loss is reduced, the lighting effect is further improved, and the lighting effect of the LED product can be further improved through the sequential excitation of the plurality of fluorescent layers.

This invention relates to a hydrogen-bonded organic framework material with thermal exciton properties, its preparation method, and its applications. The material utilizes organic ligands with aggregation-induced emission properties, forming a three-dimensional periodic network through intermolecular hydrogen bond self-assembly. The ordered molecular stacking within the framework effectively activates and enhances the intrinsic luminescence performance of the ligands. Furthermore, by introducing halogen atoms for structural modulation, the excited-state energy levels can be finely tuned, thereby inducing thermal exciton properties and significantly improving the utilization efficiency of triplet excitons. This material possesses rapid luminescence kinetics and holds promise as a high-performance scintillator. Its high triplet state utilization efficiency significantly enhances its light yield, reaching 14474 MeV. ‑1 Furthermore, this material can be incorporated into a polymer matrix to form flexible thin films, exhibiting excellent X-ray imaging capabilities.

The invention discloses a gallium nitride device and a preparation method thereof, and relates to the technical field of semiconductor devices. The gallium nitride device comprises a sapphire substrate, an AlN nucleating layer, an N-type AlGaN buffer layer, an intrinsic AlGaN active layer, an electron blocking layer and a P-type AlGaN layer which are sequentially stacked from bottom to top, a gradient doping edge stop layer is arranged on the edge of the P-type AlGaN layer, and meanwhile a bottom electrode in ohmic contact with the N-type AlGaN buffer layer and a top electrode in ohmic contact with the P-type AlGaN layer are formed respectively. According to the invention, by optimizing the structural design of the substrate, the nucleating layer, the buffer layer, the active layer, the electron blocking layer, the edge termination layer and the electrode, and combining with the seagull optimization algorithm to accurately regulate and control the preparation process parameters, the comprehensive improvement of the light extraction efficiency, the carrier recombination efficiency, the breakdown voltage and the long-term working stability is realized; and the photoelectric property and the reliability of the gallium nitride device are obviously enhanced.

The application discloses a display panel and a display device. The display panel comprises a first light-emitting unit and a second light-emitting unit arranged adjacently. The first light-emitting unit comprises a first light-emitting element and a first transmission part. The second light-emitting unit comprises a second light-emitting element and a blocking part. When the first light-emitting element works and the second light-emitting element is closed, the first base color visible light emitted by the first light-emitting element can be transmitted from the corresponding first transmission part, and the display panel is in a normal display mode. When the first light-emitting element and the second light-emitting element both work, the first base color visible light emitted by the first light-emitting element and the first base color visible light under a side viewing angle emitted by the second light-emitting element can both be transmitted from the first transmission part, thereby enhancing the side viewing angle light emission of the display panel. Meanwhile, the first base color visible light under a normal viewing angle emitted by the second light-emitting element can be blocked by the corresponding blocking part, and the normal viewing angle light emission of the display panel is not affected. The display panel is in a peep-proof mode, and the peep-proof function is realized.

The invention discloses a 2835 support-based flip chip LED packaging structure, which comprises a support body and an LED flip chip, a cavity is arranged in the support body, the bottom of the cavity is connected with a centrally arranged metal electrode, the LED flip chip is arranged in the cavity, the LED flip chip is connected with the metal electrode, a white glue layer is filled between the LED flip chip and the cavity, and the bottom of the cavity is connected with the metal electrode. A packaging layer is arranged above the white glue layer in the cavity; the invention further discloses an implementation method of the flip chip LED packaging structure based on the 2835 support. The LED flip chip is directly connected to the metal electrode through the eutectic bonding or solder paste sintering process, the PN electrode of the LED flip chip makes contact with the positive electrode and the negative electrode of the support body, no gold wire is needed for electrical connection, and therefore shielding and absorption of the gold wire to emergent light are thoroughly eliminated, and the light extraction efficiency is improved.

The invention discloses a preparation process of an LYSO crystal, and relates to the technical field of scintillation crystal material preparation. The preparation process of the LYSO crystal comprises the following steps: preparing an LYSO precursor by a liquid phase method, growing an LYSO crystal sample by a Bridgman-Stockbarger method, and carrying out heat treatment and segmented annealing treatment on the LYSO crystal sample to obtain the LYSO crystal. The LYSO crystal prepared by the process has few oxygen vacancies, high transparency and strong light output, and the crucible material used in the process steps is a calcium oxide stabilized zirconia crucible, so that the instrument cost is greatly reduced.

The application provides an LED chip, a manufacturing method thereof and an LED display device, wherein an epitaxial structure of the LED chip is formed with a recess structure with an inner recess, a side wall of the recess structure has an included angle with a normal direction of a light emitting surface of the LED chip, so that the side wall of the recess structure is an inclined side wall, when light emitted by the LED chip is scattered to the inclined side wall, the inclined side wall is aligned to reflect and gather, so that the light emitted by the LED is as much as possible to be limited in the normal direction, thereby greatly reducing the light emitting angle of the LED chip, increasing the light emitting amount in the normal direction of the LED chip and the light emitting efficiency of the LED chip. In addition, the above structure and the reflection structure on the electrode side of the LED chip jointly act, further increase the reflection of the light emitted by the LED, and can further increase the light emitting amount in the normal direction of the LED chip and the light emitting efficiency of the LED chip. The display device of the application comprises the above LED chip, and the above LED chip can improve the display effect of the display device, and is also beneficial to reduce the power consumption of the display device.

This utility model provides a novel flashlight device, comprising a base, a lamp body, and a main body. One side of the lamp body is connected to the base, and the other side is connected to the main body. A camping light panel is disposed on one side of the main body near the base, and a flashlight panel is disposed on the other side. A cat's-eye lens is disposed on the lower side of the flashlight panel. A die-cast aluminum part is disposed on the outer periphery of the main body, and the cat's-eye lens is located within the die-cast aluminum part. A microprism lens is disposed inside the lamp body, and the inner diameter of the microprism lens gradually decreases from the base to the main body. The novel flashlight device provided by this utility model has an optical system and heat dissipation structure that can simultaneously meet the requirements of a wide-range camping light and a professional flashlight. Its camping light spot is more uniform, its flashlight has a higher light output, and it has good heat dissipation.

The utility model relates to a kind of uniform light's automobile front through lamp structure and car, automobile front through lamp structure includes light guide, decoration and two light source components, decoration and light guide are along transverse and set in automobile front end, and decoration is located in the front side of light guide;The both ends of light guide are formed with the inclined section of rearward bending;The light of two light source components respectively enters light guide from the end surface of both ends of light guide, and there is a dark area compensation part between any inclined section and decoration end, dark area compensation part includes the light emitting portion located in front side and the light inlet portion located in rear side, and light inlet portion is connected with inclined section;Part of light in light guide can enter dark area compensation part from light inlet portion, and then light emitting from light emitting portion to decoration end, compared with prior art, the utility model reduces or eliminates the dark area of front through lamp both ends, and the light emitting uniformity effect is better;Car has the aforementioned front through lamp structure, and has identical technical effect.

The utility model provides an LED chip. The LED chip comprises a substrate, a first electrode layer in bonding connection with the substrate, an epitaxial laminated layer located on the surface of the side, away from the substrate, of the first electrode layer, a first insulating layer, a first extension electrode, a second insulating layer and a second extension electrode. The epitaxial laminated layer comprises a plurality of light-emitting structures, three-dimensional stacking and interconnection among layers are realized, and the light-emitting structures are connected in parallel through the first expansion electrode and the second expansion electrode, so that under the condition that the voltage of the LED chip is not increased, larger current can pass through the LED chip, and the wavebands of emergent light of the light-emitting structures can be flexibly selected to realize light mixing. Moreover, the epitaxial laminated layer is provided with a plurality of first grooves, and the first expansion electrode and the second expansion electrode share the first grooves to perform current expansion injection without respective grooving to realize current expansion injection, so that uniform transmission of current can be ensured, too much light-emitting area does not need to be compressed, and the light-emitting area is maximized.

The utility model embodiment provides a kind of display panel and display device, display panel includes substrate and multiple light emitting elements located substrate one side;Display panel further includes multiple light-emitting adjustment structure, light-emitting adjustment structure is located the side of light emitting element away from substrate;Along first direction, the gap between light-emitting adjustment structure and adjacent two light emitting elements is overlapped;First direction is the thickness direction of display panel;Light-emitting adjustment structure includes at least two colors of color resistance structure, and there is adjacent two light-emitting adjustment structure between setting is hollowed out;Along first direction, at least part light emitting element and the hollowed out are overlapped.It can improve the display effect of display panel by setting light-emitting adjustment structure in display panel, and light-emitting adjustment structure includes at least two colors of color resistance structure.

The invention discloses light-emitting organic gel with the surface modified with a single-layer silicon dioxide photonic crystal and a preparation method of the light-emitting organic gel. The preparation method comprises the steps that the single-layer silicon dioxide photonic crystal is formed on the surface of a PDMS substrate; coating the precursor solution on the surface of a PDMS (Polydimethylsiloxane) substrate attached with the single-layer silicon dioxide photonic crystal, then carrying out photocuring, and stripping the PDMS substrate after the photocuring is finished, so as to obtain the luminous organic gel with the surface modified with the single-layer silicon dioxide photonic crystal, according to the preparation method disclosed by the invention, self-assembly of the silicon dioxide microspheres under a completely non-aqueous condition is realized, and the problem that the luminous gel is dissolved or swelled due to contact with an aqueous solvent is fundamentally avoided.

This invention discloses a low-voltage, high-brightness, reverse-polarity red LED chip and its fabrication method. The chip includes a Si support substrate, an epitaxial stack disposed on the Si support substrate, a P-side electrode disposed on the P-type side of the epitaxial stack, and an N-side electrode disposed on the N-type side of the epitaxial stack. The P-side electrode includes multiple semi-circular electrode units, each having a straight edge and a rounded edge. The semi-circular electrode units are positioned close to the projection area of ​​the N-side electrode in the chip plane direction. The straight edges of the semi-circular electrode units form linear or planar current injection boundaries. This invention enables the current to extend laterally from the linear or planar current injection boundaries formed by the straight edges of the semi-circular electrode units towards the chip plane, reducing current spreading resistance, improving current distribution uniformity, and reducing the electrode shading area, thereby achieving low operating voltage and high light output.

The application provides a light-emitting module and a display device. The light-emitting module comprises a driving backboard, a reflecting structure and a light-emitting device. The reflecting structure is located on one side of the driving backboard and encloses a receiving opening on the driving backboard. The light-emitting device is located in the receiving opening and is bonded to the driving backboard. The reflecting structure comprises a side surface facing the corresponding light-emitting device and a bottom surface facing the driving backboard. The included angle between the side surface and the bottom surface is an acute angle. The distance between the side of the reflecting structure away from the driving backboard and the driving backboard is greater than the distance between the side of the light-emitting device away from the driving backboard and the driving backboard. The side surface is used to reflect the light generated by the light-emitting device and incident on the reflecting structure towards the light-emitting surface direction of the light-emitting device. In this way, the reflecting structure in the above structure can block the large-angle light emission of the light-emitting device in a larger range and reflect it towards the light-emitting surface of the light-emitting device, thereby significantly improving the light-emitting efficiency of the light-emitting device and reducing the power consumption of the light-emitting module.

The application discloses an organic quaternary phosphonium salt microcrystal flexible X-ray scintillation screen and a preparation method and application thereof, and belongs to the technical field of organic photoelectric functional materials. The organic radiation luminescent material is prepared from triphenylphosphine and iodomethane as raw materials through a quaternary phosphonium reaction to obtain methyltriphenylphosphonium iodide crystals, and then the methyltriphenylphosphonium iodide crystals are ground, sieved, compounded with a PVA aqueous solution and drop-coated and dried to obtain the flexible X-ray scintillation screen. The preparation method has the advantages of mild reaction conditions, simple synthesis, cheap raw materials and easy product purification, and provides a new idea for preparing an organic scintillator. The PVA aqueous solution is doped with methyltriphenylphosphonium iodide microcrystals to prepare the scintillation screen, the prepared scintillation screen has the advantages of bright radiation luminescence, high imaging resolution, low detection limit, bendability and curlability, and successfully realizes static, curved surface and dynamic X-ray imaging.