74results about How to "Improve light output" patented technology

The invention relates to a projection zoom lens, which comprises a first fixed group, a zoom group, a second fixed group and a focusing group which are sequentially arranged along an optical axis direction, the first fixed group comprises a first lens, a second lens and a third lens, the zoom group comprises a fourth lens, a fifth lens and a sixth lens, and the focusing group comprises a fourth lens, a fifth lens and a sixth lens. The second fixed group comprises a seventh lens, an eighth lens, a ninth lens, a tenth lens and an eleventh lens, the focusing group comprises a twelfth lens, a thirteenth lens and a fourteenth lens, the first lens to the fourteenth lens are sequentially arranged in the optical axis direction, and the zooming group and the focusing group can move in the optical axis direction for focusing; the wide-angle end and the long-focal-length end of the wide-angle long-focal-length lens are combined, the focal length ranges of the wide-angle end and the long-focal-length end are reasonably set, pictures are kept clear in large-range zooming and focusing, and the wide-angle long-focal-length lens has the advantages of being small in number of moving groups, invariable in total length, simple in zooming, small in size, low in cost, free of defocusing under the environment condition of large temperature difference, stable in working performance, high in projection quality and wide in application range.

The invention relates to a small projection lens. Comprising a first lens with positive focal power, a second lens with negative focal power, a third lens with negative focal power, a fourth lens with positive focal power, a fifth lens with positive focal power, a diaphragm, a sixth lens with positive focal power and a seventh lens with negative focal power which are sequentially arranged along the direction of an optical axis, the small projection lens comprises a first lens with positive focal power, an eighth lens with positive focal power, a ninth lens with negative focal power, a tenth lens with positive focal power and an eleventh lens with positive focal power, and the effective focal length and the total length of the small projection lens are reasonably set. The camera lens is small in size, low in cost, small in projection ratio and large in aperture, can be matched with multiple DMD chips, provides enough projection brightness and size, is clear and sharp in projection picture, high in contrast ratio and accurate in color restoration, and meets strict use requirements under vehicle-mounted high and low temperature environment conditions at the same time.

The invention belongs to the technical field of artificial crystals and radiation detection, and relates to a method for improving the performance of a rare earth orthosilicate scintillation crystal. The method for improving the performance of the rare earth orthosilicate scintillation crystal comprises the following steps: carrying out corrosion, plasma injection and annealing diffusion on the rare earth orthosilicate scintillation crystal, and finally realizing the improvement of the performance of the rare earth orthosilicate scintillation crystal.

The invention relates to ultrahigh-concentration cerium ion activated borosilicate scintillation glass rich in Gd2O3, which is prepared from the following raw material components through the processes of sufficient mixing, high-temperature melting, mold casting, precise annealing and the like: 10 to 35 mol percent of B2O3, 10 to 35 mol percent of SiO2, 0 to 70 mol percent of Gd2O3 and 0 to 20 mol percent of CeO2. The sum of the components is 100 mol%. The invention further relates to a preparation method and application of the ultrahigh-concentration cerium ion activated borosilicate scintillation glass rich in Gd2O3. According to the scintillation glass disclosed by the invention, ultrahigh-concentration 5-15mol% doping of CeO2 at a luminescent center in the borosilicate scintillation glass rich in Gd2O3 can be realized, and a relatively high light yield of 1300ph / MeV and scintillation decay time of about 100ns can be obtained while high density is ensured. And on the other hand, the glass has the characteristics of inherent transparency, simple preparation process, easily adjustable components, low cost, large volume and the like, so that the glass has important application value in the fields of nuclear radiation detection, high-energy physical experiments, X-ray medical imaging, neutron detection, industrial online detection, national safety monitoring and the like.

The invention discloses a crystal compound, a preparation method thereof and application of the crystal compound in X-ray detection, imaging and anti-counterfeiting encryption, and belongs to the technical field of crystals. The molecular formula of the crystal compound is [Cu (totp) (CH3CN) 3] [Cu2I3 (totp) (PN)]. (CH3CN), wherein totp is tris (o-tolyl) phosphine; and PN is diphenyl-2-pyridine phosphine. The crystal compound disclosed by the invention is simple in preparation method, and has the characteristics of large mass attenuation coefficient of X-ray energy, high light yield and low detection limit when being used as a material of an X-ray detector. The compound also has the characteristic of structural transformation in solvents such as methanol, ethanol, acetone, dichloromethane, tetrahydrofuran and the like, and meanwhile, the conversion of luminescence color under the excitation of 365nm ultraviolet light and X rays is accompanied. The material can be applied to the aspects of scintillator materials, room-temperature X-ray radiation indirect detection materials, radiation detection dosimeters, X-ray scintillator medical imaging, anti-counterfeiting encryption and the like.

The utility model belongs to the technical field of deep ultraviolet LEDs, and particularly relates to a glue-oil separated deep ultraviolet LED packaging structure, which comprises a ceramic substrate, a light-emitting device, filling liquid, curing glue and a spherical lens, the light-emitting device is arranged at the center of the ceramic substrate, the curing glue is arranged on the inner side surface of the spherical lens, and the filling liquid is filled in the filling liquid. The spherical lens is installed on the ceramic substrate, and filling liquid is arranged between the curing glue and the light-emitting device. According to the utility model, the glue is solidified on the spherical lens, the quartz glass is bonded on the ceramic substrate dam, the liquid is filled between the position right above the light-emitting device and the spherical lens, the filling liquid is completely attached to the position above the chip and the lens, the refractive index of the filling liquid is between the refractive index of the light-emitting device and the solidifying glue, and light refractive index gradient output is realized. Therefore, the packaging structure with high light extraction rate is achieved.

The utility model discloses an LED device. The LED device comprises a substrate, an LED chip arranged on the substrate, a diaphragm arranged on the LED chip, a packaging colloid wrapping the periphery of the LED chip and the diaphragm, and a transparent adhesive layer arranged on the diaphragm and the packaging colloid. A concave-convex surface structure is arranged at the connecting position of the transparent adhesive layer and the packaging colloid, and / or a concave-convex surface structure is arranged at the connecting position of the substrate and the packaging colloid. The LED chip is subjected to double-layer packaging, the light emitting efficiency is improved, the packaging stability of the LED device is improved by arranging the concave-convex surface structure, and therefore the reliability of the LED device is improved.

The invention relates to an LED epitaxial wafer, a growth method of a graphene layer and an LED chip, and belongs to the technical field of LEDs. The LED epitaxial wafer comprises a substrate, and a graphene layer, a buffer layer, an undoped GaN layer, an n-type GaN layer, a stress release layer, a multi-quantum well layer, an electron barrier layer and a p-type GaN layer which are sequentially epitaxially grown on the substrate, wherein the thickness of the single graphene layer is 0.5-1.5 nm, and the number of the graphene layers is at least two. According to the LED epitaxial wafer provided by the invention, the defect density in the GaN template layer is reduced through deposition of the graphene interlayer. Therefore, the recombination efficiency of electrons and holes is improved, so that the luminous efficiency of the LED is enhanced. Due to the existence of the graphene layer, the compressive strain of the chip is reduced, the influence of a polarization field is reduced, and the emission wavelength of electroluminescence (EL) is more stable.

The present invention belongs to the field of ceramic scintillators, and specifically discloses a heterovalent ion co-doped garnet transparent scintillating ceramic and a preparation method thereof; the ceramic structure has the following general formula: (R x A 3‑x‑ y A y ')(B 5‑z B' z ) 12 ; Wherein: R represents an activating ion and a sensitizer thereof, including at least one of Ce, Pr, Yb, and Cr elements; A is at least one of the rare earth elements Gd, Y, and Lu; A' represents a divalent cation, including at least one of the elements Mg, Ca, Sr, and Ba; B is at least one of the elements Al, Ga, and Sc; B' represents a tetravalent cation Si; x ranges from 0.0005 to 0.1, y ranges from 0.00005 to 0.01, and z ranges from 0.00005 to 0.01. The present invention uses a heterovalent ion to co-replace the balanced charge, so that the ceramic has the characteristics of high light yield, fast decay, and low afterglow. The ceramic is prepared based on a high-energy ball milling method to prepare powder, which is simple in process and can be mass-produced.

The utility model discloses a light source packaging structure with a characteristic of improving light extraction rate, which comprises a base and a chip arranged on the base, a spherical lens used for transmitting a light source emitted by the chip is arranged above the chip, the spherical lens is of a regular spherical lens structure, a support used for supporting the spherical lens is arranged on the periphery of the chip, and the spherical lens is arranged on the support. A concave lens structure is defined by the support, the base and the bottom of the lens. The LED packaging lens solves the problem that the light emitting rate is damaged due to light pattern scattering, weakening, deformation and the like caused by the fact that a hemisphere-shaped structure is adopted as the LED packaging lens in the prior art.

The utility model discloses an integrated semiconductor stacked structure device, which relates to the technical field of semiconductors and comprises a carrier layer, a circuit layer, a metal layer module and a semiconductor module which are sequentially stacked from bottom to top. The semiconductor module comprises a plurality of semiconductor components; the metal layer module comprises a migration prevention metal layer or a plurality of migration prevention metal layers which are sequentially stacked from bottom to top; chip metal layers are arranged on the metal layer modules in the first region and the second region; the first region is a region between the semiconductor component and the corresponding positive electrode; the second region is a region between the semiconductor component and the negative electrode corresponding to the semiconductor component; reflecting layers are arranged on the metal layer module and the semiconductor components, or the reflecting layers are arranged in the areas between the adjacent semiconductor components, and combination and heat transfer of the positive electrode, the negative electrode and the semiconductor module are achieved through the chip metal layer; the reflecting layer is arranged between the semiconductor components, so that the light extraction rate can be increased.

The invention discloses high-density Sn < 2 + >-doped silicon-boron-gadolinium scintillation glass as well as a preparation method and application thereof, and belongs to the field of scintillation luminescent materials. The high-density Sn < 2 + > doped silicon-boron-gadolinium scintillation glass comprises a main body component, a reducing agent and externally doped Sn < 2 + >, the main body components comprise SiO2, B2O3, Gd2O3, GdF3 and X, and the X is one or more of Al2O3, AlF3, BaO and BaF2; the molar percentages of SiO2, B2O3, Gd2O3, GdF3 and X are as follows: the molar percentage of SiO2 is 5 to 10 mol percent, the molar percentage of B2O3 is 15 to 30 mol percent, the molar percentage of Gd2O3 is 25 to 35 mol percent, the molar percentage of GdF3 is 25 to 35 mol percent, and the molar percentage of X is 5 to 15 mol percent; the sum of the main components is 100 mol%; the molar percentage of the reducing agent is 0.5-2 mol%; the molar percentage of the externally doped Sn < 2 + > is 0.5-2 mol%; the density of the high-density Sn < 2 + > doped silicon-boron-gadolinium scintillation glass is 6-6.26 g / cm < 3 >, the photoluminescence quantum efficiency is 75%-90%, the density, the photoluminescence quantum efficiency and the X-ray imaging resolution of the scintillation glass are greatly improved, and the preparation cost of the high-density scintillation glass is reduced.

The invention relates to a micro-channel array type CsI: T1 scintillation screen and a preparation method thereof. The micro-channel array type CsI: T1 scintillation screen comprises a micro-channel array substrate; the micro-channel array substrate is of a channel structure, the channel structure is square holes, and the holes are vertically arranged in a square mode. The inner wall of a channel of the micro-channel array substrate is plated with a mirror surface metal reflecting film, and the channel is filled with a scintillator thallium-doped cesium iodide; and an aluminum film or a heavy metal film is evaporated on the incident surface of the micro-channel array CsI: T1 scintillation screen. The area of the channels of the scintillation screen relative to the surface of the base body is large, the larger the area ratio is, the larger the proportion of the scintillator is, the detection efficiency of the scintillation screen is better improved, and the radiation dosage of the back face is reduced. According to the scintillation screen, mirror surface metal such as an Al film is selected as the reflecting film, and the light output of the scintillation screen can be greatly improved. The test result shows that the X-ray detector integrated by the scintillation screen can realize the high spatial resolution of 101p / mm, and the effect is very excellent in the actual test.

The skin treatment equipment comprises a shell and a light emitting assembly, and the shell is provided with a light emitting area; the light emitting assembly is arranged in the shell and comprises a lamp tube and a light reflecting part, the light reflecting part comprises a surrounding part and a side light reflecting part, the surrounding part surrounds the lamp tube and comprises a first side edge and a second side edge which are arranged in the circumferential direction of the lamp tube at intervals, and a light emitting opening facing the light emitting area is formed between the first side edge and the second side edge. At least one end of the surrounding part is provided with a side reflecting part; wherein in the direction from the first side edge to the second side edge, the side light reflecting part is connected with one side of the surrounding part, the side light reflecting part and the other side of the surrounding part are arranged in a spaced mode to form an end air opening, a heat dissipation medium flows into or out of the surrounding part, and the ratio of the width of the end air opening to the width of the surrounding part is larger than 0.4 and smaller than or equal to 0.8. The skin treatment equipment has the advantage of being good in heat dissipation effect on the basis of improving the light emitting energy.

The invention particularly relates to a trace neodymium-doped phenylethylamine lead-bromine single crystal capable of simultaneously enhancing the light yield and shortening the decay time and application thereof, and solves the technical problem that in the prior art, the light yield is difficult to increase and the luminescence decay time is difficult to shorten at the same time. The trace neodymium-doped phenylethylamine lead-bromine single crystal capable of simultaneously enhancing the light yield and shortening the decay time is prepared by the following steps: 1) weighing; the preparation method comprises the following steps: weighing phenylethylamine hydrobromide, lead bromide and neodymium bromide, and putting into a glass bottle; the molar ratio of the phenylethylamine hydrobromide to the lead bromide to the neodymium bromide is 2: 1: (0.02-0.05); 2) obtaining a precursor solution; adding N, N-dimethylformamide into the glass bottle, heating and stirring until the N, N-dimethylformamide is completely dissolved to obtain a precursor solution; 3) obtaining a crystal; the precursor solution is filtered and then put into a glass beaker to be crystallized, and the neodymium-doped phenylethylamine lead-bromine single crystal is obtained; the radiation recombination rate is improved by adjusting the crystal energy band structure through neodymium.

The present invention provides an indirect flat-panel detector and a preparation method thereof, comprising: a substrate; a lower electrode layer; an organic light conversion layer, wherein the raw materials for the preparation thereof include a P-type organic photoelectric material, an N-type organic photoelectric material and an organic solvent for dissolving the P-type organic photoelectric material and the N-type organic photoelectric material; an upper electrode layer; a packaging layer, wherein the first packaging layer and the second packaging layer are alternately stacked in at least two groups, wherein the material of the first packaging layer includes parylene or polyimide, and the material of the second packaging layer includes aluminum oxide, silicon dioxide or silicon nitride; and a scintillator layer, wherein the material includes Ca 1‑x Sr x I2 or Ca 1‑x Sr x I2:yEu 2+ , where 0≤x≤1, 0.01%≤y≤5%. Using an organic light conversion layer and combining Ca 1‑x Sr x I2 or Ca 1‑x Sr x I2:yEu 2+ The scintillator layer of the material effectively improves the light response of the indirect flat-panel detector, greatly improves the sensitivity of the flat-panel detector, and enables the flat-panel detector to be used in low-dose application scenarios; in addition, by setting the encapsulation layer, damage to the organic light conversion layer when forming the scintillator layer can be effectively prevented.

A semiconductor laser element, a semiconductor laser device, a manufacturing method thereof, and a gas analysis device. A distributed feedback semiconductor laser element (3) has a diffraction grating (3M) formed on a waveguide path (3L), stably outputs light of a single mode, and increases the intensity of the light. The waveguide path (3L) includes a diffraction grating portion (301) in which the diffraction grating (3M) is formed, and a flat portion (302) having a region in which the diffraction grating (301) is not formed and which is wider than the diffraction grating portion (301). The flat portion (302) has a connecting portion (303) having a region in which the width continuously changes toward a connecting position with the diffraction grating portion (301). A high reflection film (HR) is provided on an end surface of the flat portion (302) on the opposite side from the connecting portion (303), and a low reflection film (AR) is provided on an end surface of the diffraction grating portion (301) on the opposite side from the connecting portion (303).

The present invention discloses a micro display device and a preparation method thereof, which relates to the field of display technology, wherein the micro display device comprises: a driving substrate; a pixel array layer, comprising a plurality of micro display units, arranged on the surface of the driving substrate; a nano composite film, comprising a multi-layer nano-scale film layer, located in the light emitting direction of the side wall of the micro display unit; wherein the multi-layer nano-scale film layer comprises an insulating bottom layer, an intermediate transmission layer, a reflection layer and a protective layer which are sequentially away from the side wall. The technical solution provided by the present invention not only enhances the optical isolation and electrical isolation between the micro display units, but also meets the demand for preparing micro display units of smaller size.

The utility model discloses a top light-emitting panel structure packaged by hard board glass in the technical field of hard screen panels, which comprises a glass substrate, a glass cover plate, a grid circuit layer, a color filter film layer and a light resistance supporting layer, and a grid insulating layer, a source-drain insulating layer and a semiconductor conducting layer are attached to the top of the glass substrate. The color filter film can be prepared on the glass cover plate with the hard board characteristic, packaging can be carried out through the hard board packaging technology, meanwhile, the front light emitting rate is effectively improved through the color filter film and the micro lens on the top of the color filter film, and product power consumption is effectively reduced; by reasonably designing the distance between the color filter film layer and the OLED evaporation layer and the relation between the height of the glass powder glue and the height of the film layer between the glass, the color filter film layer can be prevented from being influenced by packaging and pressing pressure, and the problem of abnormal light emission caused by interference of the evaporation layer is avoided.

The invention relates to a surface conical array regulated scintillator device and preparation and application thereof. The scintillator device comprises: a scintillator; the conical array covers the light emitting surface of the scintillator and is formed by arranging a plurality of polystyrene nanocones in a periodic hexagonal close packing structure. Compared with the prior art, the surface conical array provided by the invention can effectively improve the first light extraction efficiency of the scintillator and reduce the time dispersion of light emission, thereby improving the time resolution and the like of the scintillation detector.

The semiconductor light emitting device package includes a common connection electrode having a first region and a second region; a first semiconductor light emitting device on the first region of the common connection electrode; a pair of assembly wirings on the second region of the common connection electrode; and a second semiconductor light emitting device on the pair of assembly wirings.

This invention provides a display panel and display device, comprising: a substrate, a planarization layer, an anode layer, and a pixel definition layer stacked sequentially. The pixel definition layer includes a flat region, several exposed opening regions, and a ramp region disposed between the flat region and the opening regions. The opening regions expose the central region of the anode layer. A light-emitting layer is patterned in the opening regions, on the side of the anode layer facing away from the substrate. A reflective layer is patterned in the side of the pixel definition layer facing away from the substrate, and the reflective layer only exposes the light-emitting layer. At least a portion of the emitted light from the light-emitting layer is reflected by the local reflective layer and guided in a direction perpendicular to the substrate. A transparent cathode layer is formed on the side of the light-emitting layer and the reflective layer facing away from the substrate. This invention solves the problem of light escaping or being absorbed through the pixel definition layer, guiding the emission direction of laterally emitted light to a vertical direction, thereby improving the light extraction efficiency.

The invention provides a cerium-lithium co-doped lanthanum halide scintillation crystal and a preparation method and application thereof. The general formula of the cerium-lithium co-doped lanthanum halide scintillation crystal is Cex6LiyMzLa (1-x-y-z) X3-y, 0 < x < = 0.2, 0 < y < = 0.05, 0 < z < = 0.01, M is selected from at least one of Na, Mg, Ca, Sr, Ba or Zn, and X is selected from at least one of Cl or Br. 6LiBr and MXa are simultaneously doped into the LaX3: Ce crystal, a is 1 or 2, 6LiBr doping is utilized to realize neutron detection, MXa doping is utilized to improve the neutron-gamma discrimination capability, neutron-gamma dual-mode detection is realized through the synergistic effect of 6LiBr and MXa, and the neutron-gamma discrimination capability and detection efficiency of the scintillation crystal are further improved. The crystal also has the advantages of high energy resolution, high light output, short attenuation time and the like.

The invention relates to scintillator glass melted in a high-concentration hydrogen atmosphere and a preparation method and application thereof. The preparation method comprises the following steps: preparing raw materials and mixing the raw materials; charging and melting in a high-concentration hydrogen atmosphere: charging the powder into a high-purity alumina crucible, then putting the crucible into a hearth of a high-concentration hydrogen atmosphere furnace, vacuumizing, introducing mixed gas into the high-concentration hydrogen atmosphere furnace, controlling the total flow of the mixed gas, and melting in the high-concentration hydrogen atmosphere furnace, when the pressure in the hearth is in a micro-positive pressure state, opening a one-way stop valve, controlling tail gas emission, starting an atmosphere furnace heating system, and heating, preserving heat and founding for a certain time; clarifying and homogenizing; molding by casting and annealing; and processing to obtain the scintillator glass. According to the invention, efficient formation and uniform dispersion of Ce < 3 + > are guaranteed through sufficient reduction, and finally, the scintillator glass reaches better levels in transmittance, light yield, decay time and irradiation resistance.

The invention discloses a display panel, a preparation method of the display panel and a display device. The display panel comprises a back plate and a plurality of light-emitting elements located on one side of the back plate. The back plate comprises a substrate and a micro-mechanical structure located on the side, close to the light-emitting element, of the substrate, the micro-mechanical structure comprises a reflecting electrode and a control electrode, the first end of the reflecting electrode is arranged in the back plate, the second end of the reflecting electrode is arranged on the side, close to the light-emitting element, of the back plate, and the control electrode is located on the side, close to the light-emitting element, of the substrate; the voltage difference between the reflecting electrode and the control electrode is a first voltage difference, and the reflecting electrode enables part of light of the light-emitting element to be emitted at a first emitting angle; the voltage difference between the reflecting electrode and the control electrode is a second voltage difference, and the reflecting electrode enables part of light of the light-emitting element to be emitted at a second emitting angle. According to the technical scheme, the micro-mechanical structure is arranged in the display panel, the light emitting angle can be adjusted according to requirements, and the application scene of the display panel is expanded.

The invention provides a display panel, a manufacturing method thereof and a display device, and relates to the technical field of display. The display panel is provided with a display area, and the display area comprises a light-transmitting area and a non-light-transmitting area; the display panel includes: a transparent substrate; the light path adjusting layer is located on one side of the transparent substrate and comprises a plurality of first dimming structures, and the first dimming structures are used for transmitting incident light entering the non-light-transmitting area from the side, away from the light path adjusting layer, of the transparent substrate to the light-transmitting area; the driving circuit layer is located on the side, away from the transparent substrate, of the light path adjusting layer, the driving circuit layer comprises a plurality of pixel circuits, and the pixel circuits are located in the non-light-transmitting areas respectively; the orthographic projections of the plurality of pixel circuits on the transparent substrate are at least partially overlapped with the orthographic projections of the plurality of first dimming structures on the transparent substrate correspondingly. The display panel is good in perspective effect.

The invention relates to a large-aperture projection lens, which comprises a first lens, a second lens, a third lens, a fourth lens, a diaphragm, a fifth lens, a sixth lens, a seventh lens and an eighth lens which are sequentially arranged along the direction of an optical axis, and is characterized in that the first lens, the fourth lens, the fifth lens, the seventh lens and the eighth lens have positive focal power; the second lens, the third lens and the sixth lens have negative focal power, and the sixth lens and the seventh lens are doublet lenses and have positive focal power; by reasonably setting the focal length and the entrance pupil diameter of the lens, the lens has the characteristics of large aperture, small size and low cost, does not defocus under the environmental condition of large temperature difference, and is stable in working performance, high in projection quality and wide in application range.

The utility model discloses a kind of lighting lamps and lanterns of being convenient for adjusting, including rotatably arranged lamp bead disc and lampshade disc, lampshade disc covers the luminous surface of lamp bead disc, lamp bead disc includes at least one group of annular distribution lamp bead body;At least one diffusing ring is correspondingly provided on lampshade disc, diffusing ring is arranged with multiple shading portion and light outlet portion of alternately setting along its circumferential direction, wherein, the light transmittance of light outlet portion is much greater than the light transmittance of shading portion;Rotating lampshade disc, to change the relative angle of shading portion relative to lamp bead body;By continuous rotation adjustment, reach the desired overall or local brightness distribution and glare control effect;The present lighting lamps and lanterns by making diffusing ring with alternately shading portion and light outlet portion can rotate around concentric lamp bead disc, realized in without changing light source and without complex electronic dimming condition, to luminous flux distribution and viewing direction glare is directly and reversibly adjusted, simple and easy to use.

The application provides a high beam module and a vehicle lamp. The high beam module comprises a light source for emitting light; a high beam lens arranged on the light emitting side of the light source, the high beam lens being an integral structure, the high beam lens comprising a light inlet surface, a first total reflection surface, a second total reflection surface, a third total reflection surface and a light outlet surface, the second total reflection surface and the third total reflection surface being oppositely arranged along a first direction, the light outlet surface being located on one side of the third total reflection surface along a second direction, the light emitted by the light source being projected to the first total reflection surface through the light inlet surface, the parallel light being formed after being reflected by the first total reflection surface, the parallel light being reflected by the second total reflection surface and the third total reflection surface in sequence, and the parallel light being emitted by the light outlet surface to form a high beam light pattern; the light outlet surface comprises a plurality of sub-light outlet surfaces arranged in sequence along a third direction, and the distance between the root of each sub-light outlet surface and the light source along the second direction gradually increases along the third direction. The application can improve the light efficiency of the high beam module while ensuring the narrow opening size.

The utility model provides an LED packaging structure and a lamp bead, the LED packaging structure comprises a bowl cup support, the bowl cup support is internally provided with a light-emitting chip, a reflection part and at least two fluorescent layers, the light-emitting chip is located on the bottom wall of the bowl cup support, the at least two fluorescent layers sequentially cover the side, away from the bowl cup support, of the light-emitting chip, and the reflection part is located on the bottom wall of the bowl cup support. The excitation wavelengths are sequentially decreased along the direction far away from the light-emitting chip; the reflecting part is at least arranged on the inner side wall of the bowl-cup support, and the reflectivity of the reflecting part is larger than that of the bowl-cup support. Therefore, through the high reflectivity of the reflecting part, the light absorption of the bowl cup support can be reduced, the light emitting loss is reduced, the lighting effect is further improved, and the lighting effect of the LED product can be further improved through the sequential excitation of the plurality of fluorescent layers.