305 results about "Electron transporting layer" patented technology

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

The invention discloses a functional formamidine salt treated perovskite solar cell and a preparation method thereof. The solar cell comprises a transparent conductive substrate, an electron transport layer, a perovskite active layer, a perovskite modification layer, a hole transport layer and a metal counter electrode which are sequentially arranged from bottom to top, the perovskite light absorption layer is made of lead iodide formamidine perovskite; and the perovskite modification layer is a low-dimensional passivation layer which grows in a vertical orientation manner and is obtained by carrying out in-situ reaction on functional organic formamidine salt and the three-dimensional perovskite light absorption layer. According to the method, the surface defects of the three-dimensional perovskite thin film are effectively passivated, so that non-radiative recombination is effectively inhibited, and the charge transfer capability is improved; meanwhile, the interface energy level matching degree is optimized, and hole extraction is promoted. The preparation method provided by the invention is simple and easy to realize, has high repeatability, and effectively improves the photoelectric conversion efficiency and stability of the perovskite solar cell.

This invention discloses a method for preparing a (111) preferred-oriented perovskite thin film based on substrate control, comprising: providing a substrate; forming a SnO2 electron transport layer on the substrate; forming a zinc oxalate (ZnOX) interlayer on the electron transport layer; and preparing the perovskite active layer on the ZnOX interlayer using a two-step sequential deposition method, wherein the perovskite active layer has a (111) preferred orientation; in this invention, the interaction between oxalate anions and PbI2 induces the formation of a porous PbI2 film, which, combined with Zn... 2+ The defect compensation and lattice regulation effects of the embedded perovskite lattice successfully induced the growth of a (111) preferred orientation perovskite thin film with large grains (up to 3 μm in size) and low defect density, and the (111) / (100) peak intensity ratio was improved by nearly 5 times. This invention achieves the simultaneous optimization of perovskite thin film structure and device performance with a simple and effective interface modification strategy, providing a new path that is both scientific and practical for the industrialization of high-performance long-life perovskite solar cells.

The invention discloses a method for reducing defects of a ZnMgO electron transport layer and application of the method in preparation of a blue-light QLED (Quantum-dot Light Emitting Diode). A method for reducing the defects of a ZnMgO electron transport layer comprises the steps that a ZnCl2 aqueous solution is adopted for treating a ZnMgO electron transport layer precursor solution, the concentration of the ZnCl2 aqueous solution ranges from 5 mg / mL to 15 mg / mL, the concentration of the ZnMgO electron transport layer precursor solution ranges from 20 mg / mL to 40 mg / mL, the volume ratio of the ZnCl2 aqueous solution to the ZnMgO electron transport layer precursor solution is 1: (25-100), and ZnMgO surface passivation is achieved. The defects of the ZnMgO electron transport layer are reduced, so that the interface between the quantum dots and ZnMgO is repaired, and the performance of the blue light QLED device is improved.

This application provides a perovskite light-emitting module and its fabrication method, belonging to the field of semiconductor optoelectronic device manufacturing technology. The perovskite light-emitting module includes: a substrate, and multiple perovskite light-emitting units located on the substrate; wherein, along the direction away from the substrate, each perovskite light-emitting unit sequentially includes an anode, a hole transport layer, a perovskite layer, an electron transport layer, and a cathode; the multiple perovskite light-emitting units are arranged in series, and in two adjacent perovskite light-emitting units, the cathode of the preceding perovskite light-emitting unit is electrically connected in series with the anode of the following perovskite light-emitting unit.

The invention relates to a method for reconstructing an interface state of a perovskite light absorption layer and an electron transport layer based on molecular bridge engineering and application of the method in a solar cell, and belongs to the field of photoelectric materials and devices. The method mainly comprises the following steps: dissolving interface modified micromolecules (a compound simultaneously containing carbonyl, sulfonyl or nitryl strong electron withdrawing groups and benzene rings, pyridine or thiophene aromatic groups) to obtain an interface modified solution, spin-coating the interface modified solution on a perovskite thin film, annealing, and depositing a fullerene electron transport layer to obtain the fullerene electron transport layer. And the perovskite light absorption layer / fullerene electron transport layer interface can be reconstructed. According to the method, perovskite defects can be passivated, distribution of the fullerene derivative electron transport layer is dispersed, and interface adsorption is enhanced. A solar cell is prepared based on the modified perovskite light absorption layer / fullerene electron transport layer, and the photoelectric conversion efficiency and the working stability of the device are obviously improved.

The present application relates to a kind of organic electron transport material and its preparation method and application, which is with triazine group as center core, pyridine is the conjugated organic small molecule material of outer ring substitution, the synthetic route of the organic small molecule material is simple, low in cost, higher yield, less environmental pollution;With the organic small molecule as electron transport layer, the problem of charge injection imbalance is well solved, especially in quantum dot light emitting diode (QLEDs), greatly improves the QLEDs device performance and stability, which has extremely great significance to the application field of QLEDs.

The invention discloses a trans-perovskite solar cell based on double boric acid group anchoring and a preparation method thereof. The solar cell comprises a substrate, an anode, a hole transport layer, a co-self-assembly molecular layer, a perovskite light absorption layer, an electron transport layer and a cathode which are stacked. The co-self-assembly molecular layer comprises a first self-assembly molecule and a second self-assembly molecule of an organic compound containing two boric acid anchoring groups and a conjugated skeleton; the conjugated skeleton has at least: an extended conjugated structure including an aryl group, a biaryl group, a plurality of aryl groups bridged by heteroatoms, a heteroaryl group, and a plurality of heteroaryl groups connected by chemical bonds; the regulating group comprises an atom or a group for providing lone pair electrons, or a substituent containing a halogen atom. According to the invention, collaborative optimization of the interface stability, the carrier extraction efficiency and the interface functionality is realized through the co-self-assembly molecular layer, and the photoelectric conversion performance and the stability of the solar cell are improved.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

A semiconductor device (1) is provided with: a substrate (10); an electron transport layer (14) provided above the substrate (10); a first electron supply layer (16) provided above the electron transport layer (14); a p-type gate layer (18) provided above the first electron supply layer (16); a second electron supply layer (20) that is provided above the first electron supply layer (16) so as to cover the upper surface (18a) and the lateral surface (18b) of the p-type gate layer (18); and a gate electrode (30) that is electrically connected to the p-type gate layer (18) through an opening (22) provided in the second electron supply layer (20).

This application discloses a display panel and its fabrication method. The display panel includes: a substrate; a pixel defining layer disposed on the substrate and defining a plurality of first openings; a first electrode located in the first openings; a plurality of light-emitting units disposed in the first openings and located on the side of the first electrode away from the substrate, the light-emitting units including quantum dot light-emitting units and organic light-emitting units disposed in the same layer; an electron transport layer disposed in the first openings and located on the side of the light-emitting units away from the first electrode; and a second electrode disposed on the side of the electron transport layer away from the light-emitting units. The electron transport layer includes an inorganic electron transport layer and an organic electron transport layer, the inorganic electron transport layer covering the quantum dot light-emitting units, and the organic electron transport layer covering the organic light-emitting units.

A display device with a novel structure is provided.SOLUTION: The display device includes a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode which are stacked in this order. In the light-receiving device, a third electrode, an active layer, a first hole-transport layer, an electron-injection layer, and a second electrode are stacked in this order. The first electrode is electrically connected to one of a source and a drain of the first transistor. The second electrode is electrically connected to one of a source and a drain of the second transistor. The power supply line is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor.SELECTED DRAWING: Figure 1

An infrared (IR) full color image sensor includes a CMOS image sensor (CIS), isolation components, red light conversion units, green light conversion units and blue light conversion units. The isolation components are disposed on the CIS to define a plurality of conversion areas. The red light, the green light and the blue light conversion units are respectively located in different conversion areas. Each conversion unit includes an IR filter, an anode layer, a first electron transport layer, a light-absorbing quantum dot layer, a hole transport layer, a light-emitting quantum dot layer, a second electron transport layer and a cathode layer. The cathode layer is in direct contact with the CIS. The light-absorbing quantum dot layer absorbs IR that enters the conversion area through the IR filter and then generates electron-hole pairs. Electron-hole pairs are recombined in the light-emitting quantum dot layer to excite red, green, and blue visible lights.

The present application aims at preventing deterioration inside an organic EL element, greatly improving light extraction efficiency, and providing a compound that absorbs light of wavelengths of 400 nm to 410 nm of sunlight without affecting materials inside the element, and has a high refractive index in the range of wavelengths of 450 nm to 750 nm. The present application is an amine compound that has a high refractive index and a specific benzoxazole ring structure. In an organic EL element having, in at least this order, an anode electrode, a hole transporting layer, a light emitting layer, an electron transporting layer, a cathode electrode, and a cover layer, the cover layer preferably contains the amine compound of the present application that has a specific benzoxazole ring structure.

A method for manufacturing an electroluminescent element includes: forming a first electrode on a substrate; forming a first insulating layer covering the first electrode; forming a second electrode disposed on the first insulating layer and having a region overlapping with the first electrode; forming a first electron transport layer in contact with the second electrode; forming a second insulating layer covering the region overlapping with the second electrode and having an opening in the region overlapping with the first electrode. The method involves coating the opening with a liquid composition containing a metal oxide material and a solvent; removing the solvent after coating to form the second electron transport layer; forming a light-emitting layer overlapping the second electron transport layer and containing an electroluminescent material; and forming a third electrode in the region overlapping with the light-emitting layer.

The invention belongs to the technical field of sustainable green energy, and particularly relates to an interface layer, a perovskite solar cell and a preparation method of the perovskite solar cell. An interface layer is introduced between a perovskite active layer and an electron transport layer of the perovskite solar cell; the interface layer contains a material of the interface layer; and the material of the interface layer is selected from a compound which contains at least one of hydroxyl, amido and carboxyl and has water absorption capacity. The introduced interface layer can reduce the damage of external moisture to the perovskite active layer, so that the wet stability of the perovskite solar cell is obviously improved; and after the interface layer is introduced, the non-radiative recombination of the perovskite active layer is obviously inhibited, so that the photoelectric conversion efficiency of the perovskite solar cell is improved.

The invention relates to a thermal crosslinking interface layer modified blue light perovskite light-emitting diode and a preparation method thereof, and belongs to the technical field of light-emitting diodes. The blue-light perovskite light-emitting diode comprises an anode layer, a hole transport layer, a thermal crosslinking interface layer, a perovskite layer, an electron transport layer, a cathode interface modification layer and a cathode layer which are sequentially arranged from bottom to top, and the material of the thermal crosslinking interface layer is polypentaerythritol tetraacrylate. By introducing a thermal cross-linking polymerization interface layer between a hole transport layer and a perovskite layer, triple functions of physical protection, energy band regulation and control and chemical passivation are integrated into a single interface structure, a synergistic enhancement effect is formed, the problems of solvent erosion, energy level mismatch and defect recombination of a buried interface are synchronously solved, and the performance of a device is further improved; wherein a compact physical barrier provides a stable action environment for energy level regulation and control and defect passivation, and optimized carrier injection reduces interface charge accumulation and reversely enhances interface electrical stability.

A solar cell includes a transparent electrode and a hole transport layer (HTL) coupled to and disposed underneath the transparent electrode. The solar cell includes a light-absorbing layer made of a perovskite photovoltaic material that is coupled to the HTL opposite the transparent electrode. The solar cell includes an electron transport layer (ETL) made of tin oxide (SnO2) coupled to the light-absorbing layer opposite the HTL. The solar cell includes a bottom electrode made of a carbon material coupled to the ETL opposite the light-absorbing layer. The solar cell includes a substrate made of aluminum or an aluminum alloy coupled to the bottom electrode opposite the ETL.

Pixels in an organic light-emitting diode (OLED) display may have optical cavities defined by a partially transparent cathode layer and a reflective anode structure. Light at a wavelength emitted by a pixel may form a standing wave between the anode and the cathode. The standing wave may have an upper antinode and a lower antinode. Pixels of different colors may have emissive layers aligned with different antinodes. The OLED layers for the pixels may include an electron transport layer that is doped with a low work function material. The cathode may include one or more layers of transparent conductive oxide and / or metal. The cathode may be shorted to a metal mesh and / or a conductive cutting structure to decrease resistance.

The invention provides a transflective perovskite solar cell module and a laminated solar cell module. The transflective perovskite solar cell module comprises a plurality of transflective perovskite solar cells. Each transflective perovskite solar cell comprises a transparent cathode, an electron transport layer, an absorption layer, a hole transport layer, a buffer layer and a transparent anode which are stacked in sequence. And an overlapping region is formed between the transparent anode of at least one transflective perovskite solar cell and the transparent cathode of the adjacent transflective perovskite solar cell. The buffer layer extends on the transparent cathode in the overlapping region. The transflective perovskite solar cell module further comprises a metal pattern layer which is located between the buffer layer and the transparent cathode in the overlapping area so as to be connected with the transparent anode of at least one transflective perovskite solar cell and the transparent cathode of the adjacent transflective perovskite solar cell in series.

The present invention relates to an organic optoelectronic device comprising an anode and a cathode facing each other, a light-emitting layer located between the anode and the cathode, and an electron transport layer located between the light-emitting layer and the cathode, wherein the light-emitting layer comprises a first compound represented by Chemical Formula 1 and a second compound represented by a combination of Chemical Formula 2 and Chemical Formula 3, and the electron transport layer comprises a third compound represented by Chemical Formula 4. Detailed explanations of Chemical Formula 1 to Chemical Formula 4 are as defined in the specification.

The invention discloses a battery assembly and a forming method thereof. The battery assembly comprises a first substrate; a bottom electrode layer on the first substrate; the first electric energy transmission layer is located on the bottom electrode layer and comprises first electron transmission layers and first hole transmission layers which are alternately arranged; a perovskite layer; a second substrate; a top electrode layer on the second substrate; the second electric energy transmission layer is located on the top electrode layer and comprises second electron transmission layers and second hole transmission layers which are alternately arranged; the first electron transport layer is aligned with the second hole transport layer, and the first hole transport layer is aligned with the second electron transport layer. The complete perovskite layer is located between the first electric energy transmission layer and the second electric energy transmission layer, scribing segmentation does not need to be carried out on the first electric energy transmission layer, the perovskite layer and the second electric energy transmission layer, and dead zones caused by laser scribing in the first electric energy transmission layer, the perovskite layer and the second electric energy transmission layer are eliminated. And the perovskite layer is not damaged by laser scribing, so that the stability and the reliability of each sub-cell module are improved.

To provide a high-output high-frequency generator having a simple configuration.SOLUTION: A high frequency generator (10) of the present invention includes a photoelectric conversion layer (11) that generates electrons by photoelectric conversion, an electron transit layer (101) that allows electrons to transit in the photoelectric conversion layer, an anode layer (12) that is disposed in contact with the electron transit layer and is made of a semiconductor, an anode electrode layer (13) that is disposed in contact with the anode layer and is made of a metal, and an antenna (14) that radiates terahertz waves based on an alternating current generated by the transit of electrons.SELECTED DRAWING: Figure 1

The invention discloses a color-changing organic light-emitting device and a preparation method and application thereof. The organic light-emitting device comprises an anode, a cathode and an organic functional layer arranged between the anode and the cathode, and the organic functional layer comprises a hole injection layer, a hole transmission layer, an electron blocking layer, a light-emitting layer and an electron transmission layer which are arranged in sequence; the hole transport layer is arranged on the anode side, and the electron transport layer is arranged on the cathode side; the light-emitting layer comprises a blue light fluorescent layer. According to the device, the color changing function is achieved through the proportion change of blue light internal emission and interface exciplex emission.

An electronic device and a manufacturing method thereof. The electronic device includes a quantum dot light-emitting diode and an encapsulation layer encapsulating the quantum dot light-emitting diode. The quantum dot light-emitting diode includes an anode, a cathode, a quantum dot light-emitting layer provided between the anode and the cathode, an electron transport layer provided between the cathode and the quantum dot light-emitting layer, and a zinc carbide layer provided between the cathode and the electron transport layer. The encapsulation layer includes a gas reservoir layer. Arrangement of a zinc carbide layer between an electron transport layer and a cathode can improve transport capability of a carrier, and cooperation of the zinc carbide layer and an encapsulation layer can enhance a positive aging effect and stability of a device, and extend service life of the device.

The utility model belongs to the technical field of cells, and discloses a laminated perovskite solar cell, the laminated perovskite solar cell comprises two protection members, a solar cell string, liquid silica gel and a waterproof member, the two protection members are arranged at an interval, the solar cell string is installed between the two protection members, and the waterproof member is arranged between the two protection members. The liquid silica gel is coated on the surfaces of the protection pieces facing the solar cell string, the protection pieces can be adhered to the solar cell string after the liquid silica gel is cured, and the waterproof piece is clamped between the two protection pieces and surrounds the solar cell string or is included on the outer sides of the protection pieces. According to the laminated perovskite solar cell, the delamination phenomenon caused by the fact that the interface bonding strength between the electron transport layer on the upper layer of the laminated perovskite solar cell and the core perovskite layer is smaller than the stress of an adhesive film is effectively solved; and in the lamination process of the solar cell module, the lamination temperature can be reduced to weaken the high-temperature damage to the laminated perovskite cell.

Disclosed are a light-emitting device and a preparation method therefor, and a display device. The light-emitting device includes a first electrode, a first light-emitting unit, one or more charge generation layers, a second light-emitting unit, an electron transport layer and a second electrode, which are sequentially stacked. A charge generation layer is arranged between two light-emitting units, and no hole transport layer is arranged, thereby simplifying the structure of a light-emitting device while ensuring the brightness, and reducing the overall thickness of the light-emitting device.

Disclosed are a charge transport material having a deep LUMO and an organic electroluminescent device comprising the same. The charge transport material has a LUMO level of-2.9 eV or less, and has a specific structure represented by Formula 1. The charge transport material can be used for an electron transport layer in an organic electroluminescent device, the service life of the device can be greatly prolonged, and better device performance can be provided. The invention further discloses the electronic equipment.

The application discloses a high specific detectivity optical detection device and a preparation method thereof. The detection device is composed of a bottom substrate, a conductive cathode, an electron transport layer, an organic photoactive layer, a hole transport layer and a metal anode. The photoactive layer adopts a polymer donor PDPP3T and a fullerene acceptor PC 71 BM is blended to form a bulk heterojunction, and a solvent additive 1,8-diiodooctane is added to regulate the heterojunction morphology. The electron transport layer uses pure zinc oxide as a single interface layer or ethoxylated polyethyleneimine modified zinc oxide as a composite interface. Under the action of a reasonable additive content, the dark current of the detection device is significantly reduced, and a low dark current and high specific detectivity optical detection device is realized.

The application relates to a nitrite reductase electrode and a preparation method thereof and an electrochemical system. The nitrite reductase electrode comprises a substrate layer and n electron transfer layers and n enzyme activity layers in the form of alternating layers above the substrate layer, n is in the range of 2-30, wherein the substrate layer comprises a carbon-based electrode loaded with a transition metal phosphide, and the enzyme activity layer comprises a nitrite reductase. The nitrite reductase electrode has low detection limit, high sensitivity, high enzyme loading rate, high electrocatalytic efficiency and good application prospect.