534 results about "Electron transporting layer" patented technology

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

The invention relates to the technical field of electroluminescence, and discloses a laminated organic light-emitting device and application thereof, and the laminated organic light-emitting device comprises an anode layer, a first light-emitting unit, an electron transport layer, an interface modification layer, a connection layer, a second light-emitting unit and a cathode layer which are sequentially arranged from bottom to top; the electron transport layer comprises a hole blocking layer and an n-type electron transport layer; wherein the n-type electron transport layer is composed of an n-type dopant and an organic electron transport material, has the functions of electron transport, charge separation and injection and regulation and control of the optical microcavity effect of the laminated device, can simplify the electron transport and connection layer structure of the laminated device, and effectively improves the conductivity of the laminated device; according to the laminated organic light-emitting device, the voltage drop of the body is obviously reduced, and the interface electron injection barrier is reduced, so that the laminated organic light-emitting device has the advantages of low driving voltage, high efficiency and long service life, and the effect of adjusting the optical microcavity of the device can be achieved by utilizing the n-type electron transport layer.

The invention provides an organic electrochemical transistor regulated and controlled by a grating electrode and a preparation method of the organic electrochemical transistor, and belongs to the technical field of photoelectric detection and organic electrochemical transistors. The organic electrochemical transistor comprises a transparent substrate, a detector anode, a hole transport layer, a photosensitive layer, a semiconductor active layer, an electron transport layer, a detector cathode, a packaging layer, a transistor grid electrode, a transistor source electrode, a transistor drain electrode and an electrolyte. A QPD and an OECT are integrated above the transparent substrate. The invention also provides a preparation method of the organic electrochemical transistor. Through the illumination effect, the photo-generated voltage generated by the QPD serves as a grid regulation and control signal, and higher current variation for different illumination intensities is achieved. The preparation process is remarkably simplified, the responsivity, the detectivity and the linear dynamic range of the device are improved, the stability and the low power consumption characteristic are improved, and a new solution is provided for application of a photoelectric-electrochemical fusion device in the fields of flexible electronics, wearable detection, biosensing and the like.

The invention belongs to the technical field of perovskite solar cells, and particularly relates to a preparation method for improving the quality of a perovskite thin film by using a local high-temperature field, and the method comprises the steps: 1, forming a perovskite precursor thin film on an electron transmission layer; step 2, when the precursor film is in an intermediate phase or an incompletely crystallized state, placing the precursor film below a heating plate with a microstructure array, keeping a gap between a convex part of the microstructure array and the surface of the precursor film, and forming a periodically distributed local high-temperature field on the surface of the precursor film; step 3, maintaining the local high-temperature field to act for a period of time, so that the local area of the precursor film is preferentially crystallized; and 4, removing the heating plate, and uniformly annealing the precursor film. According to the method, a local high-temperature field is applied to induce a hot spot region to preferentially nucleate, abnormal growth and Ostwald ripening of crystal grains are inhibited, and the large-area uniform perovskite thin film with narrow crystal grain size distribution, low defect density and a flat film surface is obtained, so that the efficiency and consistency of a device are improved.

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

A quantum dot light-emitting device and a manufacturing method therefor, and a display panel. The quantum dot light-emitting device comprises: a quantum dot layer and an electron transport layer adjacent to the quantum dot layer; the electron transport layer comprises a first group, and the quantum dot layer comprises a second group; the first group and the second group each comprise a hydrophilic group. The first group and the second group are combined by means of a hydrogen bond on contact surfaces of the quantum dot layer and the electron transport layer, to enhance an interface interaction force between the quantum dot layer and the electron transport layer, thereby reducing interface defects of the quantum dot layer and the electron transport layer, and improving the electroluminescence performance and stability of the quantum dot device.

The present disclosure relates to an organic compound having the following structure of Formula 1, an organic light emitting diode (OLED) where an electron transport layer and / or a charge generation layer includes the organic compound and an organic light emitting device including the organic light emitting diode. While only the specific moiety in the organic compound is deuterated, the organic compound can implement excellent luminous efficiency and luminous lifespan as a compound where all the carbon atoms are deuterated. The OLED can maximize its luminous efficiency and luminous lifespan with minimizing utilization of expensive deuterium.

The invention discloses a functional formamidine salt treated perovskite solar cell and a preparation method thereof. The solar cell comprises a transparent conductive substrate, an electron transport layer, a perovskite active layer, a perovskite modification layer, a hole transport layer and a metal counter electrode which are sequentially arranged from bottom to top, the perovskite light absorption layer is made of lead iodide formamidine perovskite; and the perovskite modification layer is a low-dimensional passivation layer which grows in a vertical orientation manner and is obtained by carrying out in-situ reaction on functional organic formamidine salt and the three-dimensional perovskite light absorption layer. According to the method, the surface defects of the three-dimensional perovskite thin film are effectively passivated, so that non-radiative recombination is effectively inhibited, and the charge transfer capability is improved; meanwhile, the interface energy level matching degree is optimized, and hole extraction is promoted. The preparation method provided by the invention is simple and easy to realize, has high repeatability, and effectively improves the photoelectric conversion efficiency and stability of the perovskite solar cell.

The invention relates to the technical field of perovskite solar cells, in particular to an interface modification layer material, a perovskite solar cell and a preparation method of the perovskite solar cell. The material of the interface modification layer comprises a sulfonic acid modified aromatic diimide compound. The perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, a perovskite layer, an electron transport layer and an electrode layer, wherein an interface modification layer made of the interface modification layer material is arranged between the perovskite layer and the electron transport layer. The interface modification layer prepared from the sulfonic acid modified aromatic diimide compound is introduced between the perovskite layer and the electron transport layer, so that perovskite surface defect passivation and energy level matching can be realized at the same time, the electron extraction efficiency is remarkably improved, the compound loss is reduced, and the photoelectric conversion rate of the cell is improved.

The invention relates to a display device, a method of manufacturing the display device, an electronic device, and a head-mounted electronic device. The display device includes: a pixel circuit including a transistor on a substrate; a first cathode electrode electrically connected to the pixel circuit and in the first emission region; a first electron transport layer on the first cathode electrode; an insulating layer covering an edge of the first electron transport layer; a first light emitting layer on the first electron transport layer and the insulating layer; a first hole transport layer on the first emission layer; a first anode electrode on the first hole transport layer; a first bank on the insulating layer, surrounding the first emission region and in contact with the first anode electrode; and a second bank on the first bank and including a tip protruding from a side surface of the first bank toward the first emission region.

The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport layer and the quantum dot light emitting layer; wherein the electron transport layer and the electron buffer layer include a same metal oxide, and an oxygen vacancy concentration in the electron buffer layer is greater than that in the electron transport layer. The embodiment of the present disclosure also provides a manufacturing method for the quantum dot light emitting diode and a display apparatus.

This invention discloses a method for preparing a (111) preferred-oriented perovskite thin film based on substrate control, comprising: providing a substrate; forming a SnO2 electron transport layer on the substrate; forming a zinc oxalate (ZnOX) interlayer on the electron transport layer; and preparing the perovskite active layer on the ZnOX interlayer using a two-step sequential deposition method, wherein the perovskite active layer has a (111) preferred orientation; in this invention, the interaction between oxalate anions and PbI2 induces the formation of a porous PbI2 film, which, combined with Zn... 2+ The defect compensation and lattice regulation effects of the embedded perovskite lattice successfully induced the growth of a (111) preferred orientation perovskite thin film with large grains (up to 3 μm in size) and low defect density, and the (111) / (100) peak intensity ratio was improved by nearly 5 times. This invention achieves the simultaneous optimization of perovskite thin film structure and device performance with a simple and effective interface modification strategy, providing a new path that is both scientific and practical for the industrialization of high-performance long-life perovskite solar cells.

The invention discloses a method for reducing defects of a ZnMgO electron transport layer and application of the method in preparation of a blue-light QLED (Quantum-dot Light Emitting Diode). A method for reducing the defects of a ZnMgO electron transport layer comprises the steps that a ZnCl2 aqueous solution is adopted for treating a ZnMgO electron transport layer precursor solution, the concentration of the ZnCl2 aqueous solution ranges from 5 mg / mL to 15 mg / mL, the concentration of the ZnMgO electron transport layer precursor solution ranges from 20 mg / mL to 40 mg / mL, the volume ratio of the ZnCl2 aqueous solution to the ZnMgO electron transport layer precursor solution is 1: (25-100), and ZnMgO surface passivation is achieved. The defects of the ZnMgO electron transport layer are reduced, so that the interface between the quantum dots and ZnMgO is repaired, and the performance of the blue light QLED device is improved.

A light-emitting element includes at least: an anode; a cathode; a light-emitting layer between the anode and the cathode; and a hole-transport layer between the anode and the light-emitting layer. The hole-transport layer is a film containing a mixture of a hole-transport material and a polysiloxane-based polymer. The light-emitting element further includes: a first electron-transport layer between the light-emitting layer and the cathode; and a second electron-transport layer between the first electron-transport layer and the cathode. A value of a LUMO level of the first electron-transport layer is as high as, or higher than, a value of a LUMO level of the second electron-transport layer, and the value of the LUMO level of the first electron-transport layer is higher than a value of a LUMO level of the light-emitting layer in contact with the first electron-transport layer.

This application provides a perovskite light-emitting module and its fabrication method, belonging to the field of semiconductor optoelectronic device manufacturing technology. The perovskite light-emitting module includes: a substrate, and multiple perovskite light-emitting units located on the substrate; wherein, along the direction away from the substrate, each perovskite light-emitting unit sequentially includes an anode, a hole transport layer, a perovskite layer, an electron transport layer, and a cathode; the multiple perovskite light-emitting units are arranged in series, and in two adjacent perovskite light-emitting units, the cathode of the preceding perovskite light-emitting unit is electrically connected in series with the anode of the following perovskite light-emitting unit.

The invention discloses a full-color OLED device for realizing white balance and a manufacturing method thereof. The device structurally comprises a metal anode, a first hole transport layer, a blue light-emitting layer, a first electron transport layer, a charge generation layer, a second hole transport layer, a green light-emitting layer, a red light-emitting layer, a second electron transport layer, a TCO cathode layer, an optical path regulation and control packaging layer and a blue wave band high-reflectivity packaging layer which are stacked in sequence, a red-green wave band high-reflectivity packaging layer and a water-oxygen isolation packaging layer; according to the invention, the TCO cathode and the wavelength-selective high-reflectivity packaging structure are introduced, so that light emitting loss caused by the SPP effect of the Ag cathode can be avoided; the optical design and the electrical design of the OLED are separated, the design freedom degree is increased, and the repeatability of the OLED device is improved; and due to the high reflectivity of wavelength selection, the reflectivity wave band and the reflectivity value can be freely designed, and the white balance of emergent light of the OLED device is realized.

The invention relates to a method for reconstructing an interface state of a perovskite light absorption layer and an electron transport layer based on molecular bridge engineering and application of the method in a solar cell, and belongs to the field of photoelectric materials and devices. The method mainly comprises the following steps: dissolving interface modified micromolecules (a compound simultaneously containing carbonyl, sulfonyl or nitryl strong electron withdrawing groups and benzene rings, pyridine or thiophene aromatic groups) to obtain an interface modified solution, spin-coating the interface modified solution on a perovskite thin film, annealing, and depositing a fullerene electron transport layer to obtain the fullerene electron transport layer. And the perovskite light absorption layer / fullerene electron transport layer interface can be reconstructed. According to the method, perovskite defects can be passivated, distribution of the fullerene derivative electron transport layer is dispersed, and interface adsorption is enhanced. A solar cell is prepared based on the modified perovskite light absorption layer / fullerene electron transport layer, and the photoelectric conversion efficiency and the working stability of the device are obviously improved.

A semiconductor device includes: an electron transport layer; an electron supply layer provided above the electron transport layer and having a band gap greater than a band gap of the electron transport layer; a gate electrode provided above the electron supply layer; a contact layer embedded in recessed portions that penetrate through the electron supply layer, at positions between which the gate electrode is provided; a first insulating layer provided above a portion of the electron supply layer in which the gate electrode is not provided; and a second insulating layer provided above the first insulating layer, in contact with the contact layer, and not in contact with the gate electrode. A coefficient of linear thermal expansion of the second insulating layer is greater than a coefficient of linear thermal expansion of the electron supply layer.

The present application relates to a kind of organic electron transport material and its preparation method and application, which is with triazine group as center core, pyridine is the conjugated organic small molecule material of outer ring substitution, the synthetic route of the organic small molecule material is simple, low in cost, higher yield, less environmental pollution;With the organic small molecule as electron transport layer, the problem of charge injection imbalance is well solved, especially in quantum dot light emitting diode (QLEDs), greatly improves the QLEDs device performance and stability, which has extremely great significance to the application field of QLEDs.

The application relates to a method for preparing a high-resolution quantum dot light-emitting diode based on a capillary effect driven quantum dot self-assembly, and belongs to the technical field of light-emitting diodes and other light-emitting devices. The high-resolution quantum dot light-emitting diode is prepared in the order of a substrate-hollow injection layer-hollow transmission layer-light-emitting layer-electron transmission layer-metal electrode, wherein the preparation method of the light-emitting layer is as follows: firstly, a strip-shaped groove is formed in a polymer through hot nano-imprinting; quantum dots are deposited into the polymer groove through a solution method; under the driving of a capillary effect, the quantum dots move to the inner wall of the polymer groove and are accumulated into quantum dot strips; after the polymer substrate with the quantum dot array deposited thereon is transferred to the substrate, the substrate is immersed in a hot solvent to remove the polymer, and the light-emitting quantum dot array is left. The method is simple to operate, high in yield, and suitable for large-scale industrial production of high-resolution quantum dot light-emitting diodes.

The invention discloses a trans-perovskite solar cell based on double boric acid group anchoring and a preparation method thereof. The solar cell comprises a substrate, an anode, a hole transport layer, a co-self-assembly molecular layer, a perovskite light absorption layer, an electron transport layer and a cathode which are stacked. The co-self-assembly molecular layer comprises a first self-assembly molecule and a second self-assembly molecule of an organic compound containing two boric acid anchoring groups and a conjugated skeleton; the conjugated skeleton has at least: an extended conjugated structure including an aryl group, a biaryl group, a plurality of aryl groups bridged by heteroatoms, a heteroaryl group, and a plurality of heteroaryl groups connected by chemical bonds; the regulating group comprises an atom or a group for providing lone pair electrons, or a substituent containing a halogen atom. According to the invention, collaborative optimization of the interface stability, the carrier extraction efficiency and the interface functionality is realized through the co-self-assembly molecular layer, and the photoelectric conversion performance and the stability of the solar cell are improved.

The present application relates to the technical field of organic optoelectronic materials and devices, in particular to a preparation method of white organic light-emitting diodes based on a kind of blue, yellow and other color cMa copper (I) TADF complex with nitrogen heterocyclic carbene-copper-arylamines structure, including three steps: first, synthesis of cMa type copper (I) TADF complex containing blue light emitter and yellow light emitter as representative, obtained by ligand selection, intermediate preparation and purification;Second, construct layered WOLEDs device, from bottom to top in turn for substrate, ITO anode, hole injection layer, hole transport layer, buffer layer, yellow light emitting layer, blue light emitting layer, electron transport layer, electron injection layer and Al cathode;Third, through substrate pretreatment, mbar high vacuum evaporation and nitrogen glove box packaging complete device preparation.The WOLEDs device W1, W2 prepared by the present application has excellent photoelectric performance, the CRI is up to 83, the maximum external quantum efficiency is greater than or equal to 13.3%, has good stability and low cost, and is suitable for lighting and display fields.

A semiconductor device (1) is provided with: a substrate (10); an electron transport layer (14) provided above the substrate (10); a first electron supply layer (16) provided above the electron transport layer (14); a p-type gate layer (18) provided above the first electron supply layer (16); a second electron supply layer (20) that is provided above the first electron supply layer (16) so as to cover the upper surface (18a) and the lateral surface (18b) of the p-type gate layer (18); and a gate electrode (30) that is electrically connected to the p-type gate layer (18) through an opening (22) provided in the second electron supply layer (20).

This application discloses a display panel and its fabrication method. The display panel includes: a substrate; a pixel defining layer disposed on the substrate and defining a plurality of first openings; a first electrode located in the first openings; a plurality of light-emitting units disposed in the first openings and located on the side of the first electrode away from the substrate, the light-emitting units including quantum dot light-emitting units and organic light-emitting units disposed in the same layer; an electron transport layer disposed in the first openings and located on the side of the light-emitting units away from the first electrode; and a second electrode disposed on the side of the electron transport layer away from the light-emitting units. The electron transport layer includes an inorganic electron transport layer and an organic electron transport layer, the inorganic electron transport layer covering the quantum dot light-emitting units, and the organic electron transport layer covering the organic light-emitting units.

A display device with a novel structure is provided.SOLUTION: The display device includes a power supply line, a first transistor, a second transistor, a light-emitting device, and a light-receiving device. The light-emitting device includes a first electrode, a light-emitting layer, a first electron-transport layer, an electron-injection layer, and a second electrode which are stacked in this order. In the light-receiving device, a third electrode, an active layer, a first hole-transport layer, an electron-injection layer, and a second electrode are stacked in this order. The first electrode is electrically connected to one of a source and a drain of the first transistor. The second electrode is electrically connected to one of a source and a drain of the second transistor. The power supply line is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor.SELECTED DRAWING: Figure 1

An infrared (IR) full color image sensor includes a CMOS image sensor (CIS), isolation components, red light conversion units, green light conversion units and blue light conversion units. The isolation components are disposed on the CIS to define a plurality of conversion areas. The red light, the green light and the blue light conversion units are respectively located in different conversion areas. Each conversion unit includes an IR filter, an anode layer, a first electron transport layer, a light-absorbing quantum dot layer, a hole transport layer, a light-emitting quantum dot layer, a second electron transport layer and a cathode layer. The cathode layer is in direct contact with the CIS. The light-absorbing quantum dot layer absorbs IR that enters the conversion area through the IR filter and then generates electron-hole pairs. Electron-hole pairs are recombined in the light-emitting quantum dot layer to excite red, green, and blue visible lights.

The application belongs to the technical field of semiconductor, and provides a power device resistant to single event burnout and a preparation method thereof. The power device resistant to single event burnout comprises a semiconductor substrate, an N-type buffer layer, an N-type drift layer, an electron transport layer, a P-type base layer, a first gate insulating layer, a second gate insulating layer, a first gate material layer, a second gate material layer, a source doped region, a source metal layer, a P-type heavily doped region and a drain metal layer. The P-type heavily doped region and the electron transport layer are arranged, so that a high-concentration body diode can be formed at the position where the P-type heavily doped region and the electron transport layer are in contact, more holes flow to the P-type heavily doped region rather than the P-type well region, the parasitic NPN triode of the power device is prevented from being turned on, the current density in the power device is reduced, and the single event burnout resistance of the power device can be significantly improved without sacrificing the basic electrical characteristics.

The invention relates to the technical field of solar cells, in particular to a fullerene derivative, a preparation method thereof and a solar cell. The fullerene derivative comprises a fullerene part, BCP and a derivative part thereof, and the fullerene part, the BCP and the derivative part thereof are bonded through chemical bonds. The fullerene derivative can be used for preparing an electron transport layer or a modification layer between the electron transport layer and a perovskite layer, and the photoelectric conversion efficiency and stability of a formed cell can be improved.

The present application aims at preventing deterioration inside an organic EL element, greatly improving light extraction efficiency, and providing a compound that absorbs light of wavelengths of 400 nm to 410 nm of sunlight without affecting materials inside the element, and has a high refractive index in the range of wavelengths of 450 nm to 750 nm. The present application is an amine compound that has a high refractive index and a specific benzoxazole ring structure. In an organic EL element having, in at least this order, an anode electrode, a hole transporting layer, a light emitting layer, an electron transporting layer, a cathode electrode, and a cover layer, the cover layer preferably contains the amine compound of the present application that has a specific benzoxazole ring structure.

A method for manufacturing an electroluminescent element includes: forming a first electrode on a substrate; forming a first insulating layer covering the first electrode; forming a second electrode disposed on the first insulating layer and having a region overlapping with the first electrode; forming a first electron transport layer in contact with the second electrode; forming a second insulating layer covering the region overlapping with the second electrode and having an opening in the region overlapping with the first electrode. The method involves coating the opening with a liquid composition containing a metal oxide material and a solvent; removing the solvent after coating to form the second electron transport layer; forming a light-emitting layer overlapping the second electron transport layer and containing an electroluminescent material; and forming a third electrode in the region overlapping with the light-emitting layer.