The invention belongs to the technical field of
perovskite solar cells, and particularly relates to a preparation method for improving the quality of a
perovskite thin film by using a local high-temperature field, and the method comprises the steps: 1, forming a
perovskite precursor thin film on an
electron transmission layer; step 2, when the precursor film is in an intermediate phase or an incompletely crystallized state, placing the precursor film below a heating plate with a
microstructure array, keeping a gap between a convex part of the
microstructure array and the surface of the precursor film, and forming a periodically distributed local high-temperature field on the surface of the precursor film; step 3, maintaining the local high-temperature field to act for a period of time, so that the local area of the precursor film is preferentially crystallized; and 4, removing the heating plate, and uniformly annealing the precursor film. According to the method, a local high-temperature field is applied to induce a hot spot region to preferentially nucleate, abnormal growth and
Ostwald ripening of
crystal grains are inhibited, and the large-area uniform perovskite thin film with narrow
crystal grain size distribution, low defect density and a flat film surface is obtained, so that the efficiency and consistency of a device are improved.