820 results about "Electron transporting layer" patented technology

The invention belongs to the technical field of solar cells, and particularly relates to a fluorinated biguanide salt synergistically passivated perovskite solar cell and a preparation method thereof. The method comprises the following steps: S1, coating the surface of a perovskite light absorption layer with a fluorinated biguanide hydrochloride solution to form a synergistic layer; coating the surface of the synergistic layer with a halogenated phenylethylamine solution to form a synergistic passivation layer; and S2, arranging an electron transport layer and a hole blocking layer on the surface of the passivation layer. According to the invention, the synergistic passivation layer is introduced in the preparation process of the perovskite solar cell. The introduction of the fluorinated biguanide salt passivation layer can modify the perovskite crystal and generate the low-dimensional perovskite at the crystal boundary, and the second passivation layer can interact with the low-dimensional perovskite structure, thereby further protecting the perovskite film, improving the interface of the perovskite light absorption layer and the electron transport layer, and improving the short-circuit current density, open-circuit voltage and cell efficiency of the cell.

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

The invention discloses a preparation method of a perovskite battery and the perovskite battery, and the preparation method of the perovskite battery comprises the steps: providing a substrate which is provided with a first surface; a metal oxide layer is formed on the first surface through an atomic layer deposition technology, and raw materials of the atomic layer deposition technology comprise an organic metal source and a water source; preparing a self-assembled molecular layer on the metal oxide layer by adopting a spraying process; and forming a perovskite active layer, an electron transport layer and a first conductive layer which are arranged in a laminated manner on one side, away from the substrate, of the self-assembled molecular layer. The problem that the compactness of a subsequent self-assembled film layer is reduced due to the process for preparing a metal oxide film layer in the prior art is solved.

The invention relates to a perovskite / crystalline silicon laminated solar cell structure taking a tin dioxide thin film as a composite layer and a preparation method of the perovskite / crystalline silicon laminated solar cell structure, and belongs to the technical field of photovoltaics. According to the perovskite / crystalline silicon laminated solar cell structure, the tin dioxide thin film is used as a composite layer, so that the cost of cell preparation is reduced; in the preparation method of the perovskite / crystalline silicon laminated solar cell, the composite layer and the electron transport layer can adopt the same preparation method, so that the equipment cost in the preparation process is reduced; the perovskite / crystalline silicon laminated solar cell obtained by the cell structure and the preparation method provided by the invention is relatively low in preparation cost and relatively high in photoelectric conversion efficiency.

A preparation method for passivating an inorganic perovskite solar cell based on an S-(2-aminoethyl) isothiourea bromine onium hydrobromide field is characterized in that S-(2-aminoethyl) isothiourea bromine onium hydrobromide is used as a passivation material to be applied to the surface of an inorganic perovskite thin film, and a uniform passivation layer is formed on the surface of perovskite; the electric field distribution between the perovskite layer and the electron transport layer is significantly improved, the separation and transport of carriers are promoted, and non-radiative recombination is inhibited. Amino groups and thiourea groups in S-(2-aminoethyl) isothiourea bromine onium hydrobromide molecules can form stable coordinate bonds with uncoordinated lead ions on the surface of perovskite, so that the S-(2-aminoethyl) isothiourea bromine onium hydrobromide molecules are effectively anchored on the surface. Meanwhile, bromine ions in the S-(2-aminoethyl) isothiourea bromide onium hydrobromide can fill halogen vacancies in perovskite crystal lattices, so that the defect density is further reduced. And the interface characteristic between the perovskite and the electron transport layer is obviously improved, so that the photoelectric conversion efficiency and the stability of the cell are improved.

The present invention relates to a metal complex having a structure of chemical formula (I). The metal complex is applied to an organic light-emitting device which emits deep red or near-infrared light, and shows a lower driving voltage and higher luminous efficiency, and has greatly prolonged service life. Therefore, the metal complex has the potential of being applied in the field of organic light-emitting devices. Also provided is an organic light-emitting device, including a cathode, an anode, and an organic layer. The organic layer is one or more of a hole injection layer, a hole transport layer, a light-emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer; and at least one layer in the organic layer contains the compound of structural formula (I).

The invention relates to the technical field of electroluminescence, and discloses a laminated organic light-emitting device and application thereof, and the laminated organic light-emitting device comprises an anode layer, a first light-emitting unit, an electron transport layer, an interface modification layer, a connection layer, a second light-emitting unit and a cathode layer which are sequentially arranged from bottom to top; the electron transport layer comprises a hole blocking layer and an n-type electron transport layer; wherein the n-type electron transport layer is composed of an n-type dopant and an organic electron transport material, has the functions of electron transport, charge separation and injection and regulation and control of the optical microcavity effect of the laminated device, can simplify the electron transport and connection layer structure of the laminated device, and effectively improves the conductivity of the laminated device; according to the laminated organic light-emitting device, the voltage drop of the body is obviously reduced, and the interface electron injection barrier is reduced, so that the laminated organic light-emitting device has the advantages of low driving voltage, high efficiency and long service life, and the effect of adjusting the optical microcavity of the device can be achieved by utilizing the n-type electron transport layer.

The invention discloses a fullerene pyrrolidine derivative as well as a preparation method and application thereof, and relates to the field of photoelectric functional materials. The structural general formula of the fullerene pyrrolidine derivative is # imgabs0, and fullerene, amino acids with different carbon chain lengths and aromatic aldehyde are subjected to Prato reaction to generate the fullerene pyrrolidine derivative. The fullerene pyrrolidine derivative provided by the invention is used as an electron transport layer material, can significantly improve the performance of a photoelectric device, has excellent chemical stability and environmental adaptability, and greatly enhances the stability of the device. In addition, the preparation method of the fullerene pyrrolidine derivative is simple, convenient and efficient, the operation condition is mild, and the manufacturing cost of a device is reduced.

The invention provides an organic electrochemical transistor regulated and controlled by a grating electrode and a preparation method of the organic electrochemical transistor, and belongs to the technical field of photoelectric detection and organic electrochemical transistors. The organic electrochemical transistor comprises a transparent substrate, a detector anode, a hole transport layer, a photosensitive layer, a semiconductor active layer, an electron transport layer, a detector cathode, a packaging layer, a transistor grid electrode, a transistor source electrode, a transistor drain electrode and an electrolyte. A QPD and an OECT are integrated above the transparent substrate. The invention also provides a preparation method of the organic electrochemical transistor. Through the illumination effect, the photo-generated voltage generated by the QPD serves as a grid regulation and control signal, and higher current variation for different illumination intensities is achieved. The preparation process is remarkably simplified, the responsivity, the detectivity and the linear dynamic range of the device are improved, the stability and the low power consumption characteristic are improved, and a new solution is provided for application of a photoelectric-electrochemical fusion device in the fields of flexible electronics, wearable detection, biosensing and the like.

The invention discloses a perovskite solar cell based on co-self-assembly molecule-induced interface in-situ polymerization and a preparation method thereof. The perovskite solar cell comprises a nickel oxide layer, a co-self-assembly layer, an in-situ polymer layer, a perovskite layer, a passivation layer, an electron transport layer and a top electrode which are sequentially arranged on the surface of a substrate, wherein the in-situ polymer layer is arranged between the co-self-assembly layer and the perovskite layer, the co-self-assembly layer comprises co-self-assembly molecules, and the co-self-assembly molecules are formed by mixing first self-assembly molecules and second self-assembly molecules with sulfydryl at the tail end; a perovskite layer precursor solution for preparing the perovskite layer comprises ionic liquid, and the cation part of the ionic liquid contains end groups of carbon-carbon double bonds. Based on dual mechanisms of co-self-assembly molecules and in-situ polymerization, the defects of a perovskite buried interface can be effectively passivated, interface contact is enhanced, and the photoelectric conversion efficiency and long-term stability of the perovskite cell can be remarkably improved.

Disclosed are a perovskite solar cell and a preparation method therefor. The perovskite solar cell comprises a perovskite layer (3), a passivation layer (4), and an electron transport layer (5). The passivation layer (4) is located between the perovskite layer (3) and the electron transport layer (5), and the passivation layer (4) comprises a composite material formed from a polydopamine cross-linked modified layered bimetallic hydroxide compound. By means of selecting the composite material as the material of the passivation layer, the defect passivation effect at the interface of the perovskite layer (3) is good, and the electron extraction and transfer capabilities are improved.

The invention belongs to the technical field of perovskite solar cells, and particularly relates to a preparation method for improving the quality of a perovskite thin film by using a local high-temperature field, and the method comprises the steps: 1, forming a perovskite precursor thin film on an electron transmission layer; step 2, when the precursor film is in an intermediate phase or an incompletely crystallized state, placing the precursor film below a heating plate with a microstructure array, keeping a gap between a convex part of the microstructure array and the surface of the precursor film, and forming a periodically distributed local high-temperature field on the surface of the precursor film; step 3, maintaining the local high-temperature field to act for a period of time, so that the local area of the precursor film is preferentially crystallized; and 4, removing the heating plate, and uniformly annealing the precursor film. According to the method, a local high-temperature field is applied to induce a hot spot region to preferentially nucleate, abnormal growth and Ostwald ripening of crystal grains are inhibited, and the large-area uniform perovskite thin film with narrow crystal grain size distribution, low defect density and a flat film surface is obtained, so that the efficiency and consistency of a device are improved.

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

A quantum dot light-emitting device and a manufacturing method therefor, and a display panel. The quantum dot light-emitting device comprises: a quantum dot layer and an electron transport layer adjacent to the quantum dot layer; the electron transport layer comprises a first group, and the quantum dot layer comprises a second group; the first group and the second group each comprise a hydrophilic group. The first group and the second group are combined by means of a hydrogen bond on contact surfaces of the quantum dot layer and the electron transport layer, to enhance an interface interaction force between the quantum dot layer and the electron transport layer, thereby reducing interface defects of the quantum dot layer and the electron transport layer, and improving the electroluminescence performance and stability of the quantum dot device.

The invention relates to an interface passivation layer, a perovskite solar cell, a preparation method of the perovskite solar cell and an electrical device. The perovskite solar cell comprises a transparent conductive layer, a hole transport layer, a perovskite absorption layer, an interface passivation layer, an electron transport layer and an electrode which are stacked. And the interface passivation layer comprises 3-fluoro-4-aminobenzoic acid. According to the invention, polyfunctional 3-fluoro-4-aminobenzoic acid is adopted as the interface passivation layer, so that the effect of fine passivation on the surface of the perovskite solar cell is realized, the 3-fluoro-4-aminobenzoic acid interface passivation layer can chemically react with atoms or molecules at the interface defects, the defects are filled, and the surface of the perovskite solar cell is protected. According to the invention, the energy loss caused by charge recombination and interface defects can be reduced, the morphology of the interface can be optimized, the roughness of the interface can be reduced, a smoother path is provided for electron transmission, the charge transfer resistance at the interface is reduced, and the overall photoelectric conversion efficiency of the cell is improved.

The invention relates to the technical field of electroluminescent devices, in particular to a large-current quantum dot electroluminescent device and a preparation method thereof. The device comprises a substrate, a cathode, an electron transport layer, a quantum dot light-emitting layer, a current focusing layer, a hole transport layer, a hole generation layer and an anode which are tightly stacked in sequence, the current focusing layer is provided with a slit which is used for regulating and controlling the injection path of hole current to the quantum dot light-emitting layer and improving the bearable current density threshold value of the device. The material of the current focusing layer is one or more of lithium fluoride, magnesium fluoride and aluminum oxide; and the hole generation layer is used for efficiently enhancing hole injection. The invention further provides a preparation method for preparing each layered structure through spin coating and vacuum evaporation deposition. The electroluminescent device has the advantages that the hole generation layer and the current aggregation layer are utilized to construct the electroluminescent device capable of realizing large-current driving, the problem that carrier injection in the device under large-current driving is limited is solved, and the current tolerance and the luminous intensity of the device are effectively improved.

An organic semiconductor device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-transport layer and alight-emitting layer. The hole-transport layer is positioned between the anode and the light-emitting layer. The hole-transport layer is not in contact with the anode. The hole-transport layer includes a transport layer material for a light-emitting device and the GSP_slope that is a potential gradient of a surface potential of an evaporated film of the material is higher than or equal to 20 (mV / nm).

The present disclosure relates to an organic compound having the following structure of Formula 1, an organic light emitting diode (OLED) where an electron transport layer and / or a charge generation layer includes the organic compound and an organic light emitting device including the organic light emitting diode. While only the specific moiety in the organic compound is deuterated, the organic compound can implement excellent luminous efficiency and luminous lifespan as a compound where all the carbon atoms are deuterated. The OLED can maximize its luminous efficiency and luminous lifespan with minimizing utilization of expensive deuterium.

The invention discloses a functional formamidine salt treated perovskite solar cell and a preparation method thereof. The solar cell comprises a transparent conductive substrate, an electron transport layer, a perovskite active layer, a perovskite modification layer, a hole transport layer and a metal counter electrode which are sequentially arranged from bottom to top, the perovskite light absorption layer is made of lead iodide formamidine perovskite; and the perovskite modification layer is a low-dimensional passivation layer which grows in a vertical orientation manner and is obtained by carrying out in-situ reaction on functional organic formamidine salt and the three-dimensional perovskite light absorption layer. According to the method, the surface defects of the three-dimensional perovskite thin film are effectively passivated, so that non-radiative recombination is effectively inhibited, and the charge transfer capability is improved; meanwhile, the interface energy level matching degree is optimized, and hole extraction is promoted. The preparation method provided by the invention is simple and easy to realize, has high repeatability, and effectively improves the photoelectric conversion efficiency and stability of the perovskite solar cell.

The invention relates to an inversion perovskite cell containing a self-assembly monomolecular layer and a preparation method thereof.The perovskite cell comprises a hole transport layer, a perovskite layer, an electron transport layer and an electrode layer which are sequentially arranged from the side of a substrate, light is incident to the perovskite layer from the hole transport layer side, the hole transport layer is made of a self-assembly monomolecular layer material, and the electron transport layer is made of a self-assembly monomolecular layer material. A connecting layer is also arranged between the hole transport layer and the perovskite layer, an inorganic material is arranged in the connecting layer, and the inorganic material is one or combination of more of nitride, sulfide and oxide. According to the trans-perovskite cell, the self-assembled monomolecular material is adopted as the hole transport layer material, the energy level matching and conductivity requirements of trans-perovskite can be met, the connecting layer is deposited on the hole transport layer material, on one hand, the hole transport layer material can be firmly pressed on the substrate or the electrode layer, and on the other hand, the hole transport layer material can be firmly pressed on the substrate or the electrode layer; on the other hand, a bonding effect can be formed between the connecting layer and the perovskite layer, and the connecting strength between the connecting layer and the perovskite layer is enhanced.

The invention relates to the technical field of perovskite solar cells, in particular to an interface modification layer material, a perovskite solar cell and a preparation method of the perovskite solar cell. The material of the interface modification layer comprises a sulfonic acid modified aromatic diimide compound. The perovskite solar cell comprises a transparent conductive substrate, a hole transport layer, a perovskite layer, an electron transport layer and an electrode layer, wherein an interface modification layer made of the interface modification layer material is arranged between the perovskite layer and the electron transport layer. The interface modification layer prepared from the sulfonic acid modified aromatic diimide compound is introduced between the perovskite layer and the electron transport layer, so that perovskite surface defect passivation and energy level matching can be realized at the same time, the electron extraction efficiency is remarkably improved, the compound loss is reduced, and the photoelectric conversion rate of the cell is improved.

The embodiment of the invention provides a perovskite solar cell and a preparation method thereof, the perovskite solar cell comprises a substrate, a first electrode layer, a functional layer and a second electrode layer which are stacked in sequence, and the functional layer comprises a light absorption layer, and a hole transport layer and an electron transport layer which are respectively located at two sides of the light absorption layer; the first electrode layer comprises a first conducting layer and a second conducting layer which are stacked in sequence, the first conducting layer is located on one side of the substrate, and the second conducting layer is located on one side, away from the substrate, of the first conducting layer; wherein the first conductive layer is made of metal, and the second conductive layer is made of transparent conductive metal oxide. According to the perovskite solar cell and the preparation method thereof provided by the embodiment of the invention, through material selection of the first conductive layer and the second conductive layer, the extra weight caused by a traditional thick glass substrate can be significantly reduced, and the transparent conductive metal oxide can be deposited on the flexible substrate, thereby facilitating light weight and flexibility of the whole device.

Provided are a metal element-doped metal oxide dispersion liquid and a method for producing the same, the metal element-doped metal oxide dispersion liquid being excellent in dispersibility of the metal element-doped metal oxide particles, and it being possible to satisfy characteristics (flatness, defect amount, PL intensity of quantum dots when laminated as an ETL on a quantum dot layer, charge transport properties, etc.)　The metal element-doped metal oxide dispersion liquid includes metal element-doped metal oxide particles and a solvent as a dispersion medium, and has a metal cation content calculated from Li, Na, K, and Ca included in the solvent of 1 to 2700 ppm, the metal oxide particles being particles having zinc oxide as a main component, the metal element doped into the particles having zinc oxide as a main component including one or more elements selected from Al, Mg, Li, Ca, Ga, and In, and the doped metal element being included in a ratio of 2-20 mol% with respect to elemental zinc.

The invention relates to a display device, a method of manufacturing the display device, an electronic device, and a head-mounted electronic device. The display device includes: a pixel circuit including a transistor on a substrate; a first cathode electrode electrically connected to the pixel circuit and in the first emission region; a first electron transport layer on the first cathode electrode; an insulating layer covering an edge of the first electron transport layer; a first light emitting layer on the first electron transport layer and the insulating layer; a first hole transport layer on the first emission layer; a first anode electrode on the first hole transport layer; a first bank on the insulating layer, surrounding the first emission region and in contact with the first anode electrode; and a second bank on the first bank and including a tip protruding from a side surface of the first bank toward the first emission region.

The invention relates to a perovskite solar cell, a preparation method and application thereof, and a photovoltaic device. The perovskite solar cell comprises a first electrode, a perovskite light absorption layer, an electron transport layer, an interface modification layer, a buffer layer and a second electrode which are stacked, the buffer layer comprises tin oxide, and the interface modification layer comprises at least one of aluminum oxide and silicon oxide. The interface modification layer of a specific type is arranged between the specific buffer layer comprising tin oxide and the electron transport layer, so that the adhesive force between the buffer layer and the electron transport layer can be effectively improved, and meanwhile, ion migration in the perovskite solar cell can be effectively inhibited; therefore, the photoelectric conversion efficiency and the stability of the perovskite solar cell are effectively improved.

The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport layer and the quantum dot light emitting layer; wherein the electron transport layer and the electron buffer layer include a same metal oxide, and an oxygen vacancy concentration in the electron buffer layer is greater than that in the electron transport layer. The embodiment of the present disclosure also provides a manufacturing method for the quantum dot light emitting diode and a display apparatus.

The invention relates to a light-emitting device, a display panel, a display device and terminal equipment, and the light-emitting device comprises an anode which is used for injecting a hole; the cathode is used for injecting electrons; the functional layer is located between the anode and the cathode and at least comprises a first light-emitting unit, a connecting unit and a second light-emitting unit which are sequentially arranged in a stacked mode in the direction from the anode to the cathode. The first light-emitting unit comprises a hole injection layer, a first hole transport layer, a first light-emitting layer and a first electron transport layer which are sequentially arranged along the direction from the anode to the cathode; the connection unit comprises a first charge generation layer, a connection layer and a second charge generation layer which are sequentially arranged along the direction from the anode to the cathode; the connecting layer is used for hole and / or electron transmission; the second light-emitting unit comprises a second electron transport layer, a second light-emitting layer and a second hole transport layer which are sequentially arranged in the direction from the cathode to the anode. A hole blocking layer is reduced, the level potential barrier of each layer is reduced, and the driving voltage is reduced.

The invention discloses a green light Micro-LED epitaxial structure, a preparation method of the green light Micro-LED epitaxial structure and a green light Micro-LED, and relates to the field of semiconductor photoelectric devices. The epitaxial structure sequentially comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type GaN layer, an electron transport layer, a multi-quantum well layer and a P-type GaN layer; the electron transport layer sequentially comprises a first sub-layer, a second sub-layer, a third sub-layer, a fourth sub-layer, a fifth sub-layer and a sixth sub-layer; the first sub-layer comprises a non-doped Al-containing nitride layer and a Si-doped Al-containing nitride layer which are alternately stacked; the second sub-layer, the third sub-layer and the fourth sub-layer are all C and Si co-doped Ga-containing nitride layers, the fifth sub-layer is a Si-doped AlGaN layer, and the sixth sub-layer comprises Si-doped GaN layers and InGaN layers which are alternately stacked; the Si doping concentration of the second sub-layer, the third sub-layer and the fourth sub-layer is greater than the Si doping concentration of the Si-doped Al nitride layer; and the Si doping concentrations of the second sub-layer, the third sub-layer and the fourth sub-layer are respectively greater than the C doping concentrations thereof. By implementing the invention, the lighting effect and the wavelength uniformity can be improved.

This invention discloses a method for preparing a (111) preferred-oriented perovskite thin film based on substrate control, comprising: providing a substrate; forming a SnO2 electron transport layer on the substrate; forming a zinc oxalate (ZnOX) interlayer on the electron transport layer; and preparing the perovskite active layer on the ZnOX interlayer using a two-step sequential deposition method, wherein the perovskite active layer has a (111) preferred orientation; in this invention, the interaction between oxalate anions and PbI2 induces the formation of a porous PbI2 film, which, combined with Zn... 2+ The defect compensation and lattice regulation effects of the embedded perovskite lattice successfully induced the growth of a (111) preferred orientation perovskite thin film with large grains (up to 3 μm in size) and low defect density, and the (111) / (100) peak intensity ratio was improved by nearly 5 times. This invention achieves the simultaneous optimization of perovskite thin film structure and device performance with a simple and effective interface modification strategy, providing a new path that is both scientific and practical for the industrialization of high-performance long-life perovskite solar cells.

The present invention relates to a spiro-type organic electroluminescent compound containing heteroatoms, a preparation method and an application thereof, and belongs to the technical field of organic luminescent materials. The general structural formula of the spiro-type organic electroluminescent compound containing heteroatoms is Formula 1: #imgabs0# The present invention provides a spiro-type organic electroluminescent compound containing heteroatoms. The compound has high electron injection and mobility rates, and has good film-forming properties and thermal stability. When used in the electron transport layer of an organic electroluminescent device, the compound can significantly improve the electron transport efficiency from the electron transport layer to the light-emitting layer, thereby improving the luminous efficiency, while reducing the driving voltage and extending the service life of the device.