17results about How to "Reduced luminous efficiency" patented technology

The invention relates to the technical field of LEDs, in particular to a quaternary yellow-green LED epitaxial wafer and a preparation method thereof. The quaternary yellow-green LED epitaxial wafer sequentially comprises a GaAs substrate, a GaAs buffer layer, an N-type gradient doped waveguide layer, a single quantum well active layer, a P-type gradient doped waveguide layer, a P-type self-absorption layer, a P-type transition layer and a P-type periodic current expansion layer from bottom to top. Through the design that the N / P type gradient doped waveguide layer is combined with the single quantum well active layer, the P type self-absorption layer and the P type GaP / GaAsP periodic current expansion layer, and the MOCVD technology is adopted for growth, the obtained low-brightness and high-reliability quaternary yellow-green LED epitaxial wafer structure has the advantages of being high in antistatic performance, excellent in aging performance, good in surface flatness and uniformity, high in light emitting efficiency and the like. The method has the characteristics of simple process, low production cost and raw material cost and the like, is used for replacing two-component and three-component LEDs grown by an LPE technology, and has better reliability and application prospect.

A display device is provided. The display device includes a first light emitting element disposed in a first pixel region on a substrate and including a first pixel electrode having an octagonal planar shape, a second light emitting element disposed in a second pixel region on the substrate and including a second pixel electrode, a third light emitting element disposed in a third pixel region on the substrate and including a third pixel electrode having an octagonal planar shape, and a pixel defining layer covering an edge of each of the first pixel electrode, the second pixel electrode, and the third pixel electrode. A virtual line extending to coincide with a side edge of the first pixel electrode defines a first virtual quadrilateral, and a virtual line extending to coincide with a side edge of a third pixel electrode adjacent to the first pixel electrode defines a second virtual quadrilateral. The first virtual quadrangle at least partially overlaps the second virtual quadrangle in a plan view.

The invention discloses a preparation method and application of a spirofluorene xanthene-based grignarene fluorescent material. [spirofluorene xanthene-fluorobenzene]-based grignarene (G-DSFX) is synthesized by adopting a C-H bond activation gridding method. The optimal reaction conditions are as follows: the catalyst is palladium acetate Pd (OAc), the ligand is tri-tert-butylphosphine tetrafluoroborate PtBu2Me-HBF4, the alkali is potassium carbonate K2CO3, the solvent is N, N-dimethylacetamide DMAc, the temperature is 120 DEG C, the reaction is performed for 48 hours, the reaction concentration is 20 mmol. L <-1 >, and the yield is as high as 19%. The OLED is prepared by adopting a solution processing method, I-shape, U-shape, m-shape and G-DSFX are used as OLED light-emitting layers for device testing by utilizing the solution processing method, and turn-on voltages are 3.9 V, 6.9 V, 4.5 V and 6.4 V respectively; the maximum brightness is 67.9 cd.m <-2 >, 56.69 cd.m <-2 >, 45.43 cd.m <-2 > and 72.2 cd.m <-2 > respectively; the maximum external quantum efficiency EQEmax is 0.08%, 0.06%, 0.03% and 0.15%, which proves that the lattice strategy can also improve the brightness and the external quantum efficiency of the device, and provides a reference for preparing an OLED by a solution processing method.

The application discloses a display panel and a display device. The working process of a pixel circuit in the display panel comprises a first mode and a second mode. The data refresh frequency of the pixel circuit in the first mode is a first data refresh frequency F1, the data refresh frequency of the pixel circuit in the second mode is a second data refresh frequency F2, one frame refresh time of the pixel circuit comprises a pre-stage and a light-emitting stage, the time length of the light-emitting stage in the first mode is L1, the time length of the light-emitting stage in the second mode is L2, and (F1-F2) x (L1-L2) < 0. The display panel and the display device provided in the application prolong the time length of the light-emitting stage when the data refresh frequency is low, shorten the time length of the light-emitting stage when the data refresh frequency is high, and reduce the display brightness difference of the display panel under different data refresh frequencies, thereby solving the problem of uneven display brightness of the display panel.

The invention provides a display panel and a display device. The display panel comprises a driving substrate and a light-emitting carrier plate. The driving substrate comprises a silicon-based substrate and a driving circuit layer. The light-emitting carrier plate comprises a glass substrate, a light-emitting unit, a color-changing layer and a heating part. The color changing layer is arranged between the adjacent light emitting units, extends along a plane parallel to the glass substrate and is in contact with the edge of one side, close to the glass substrate, of each light emitting unit, and the orthographic projection of the color changing layer on the glass substrate covers the heating through hole in the glass substrate; and the heating part is filled in the heating through hole. When the temperature of the light-emitting unit is smaller than or equal to the threshold temperature, the color-changing layer has first transmissivity, and the heating part is used for heating under irradiation of light penetrating through the color-changing layer; when the temperature of the light-emitting unit is larger than the threshold temperature, the color-changing layer has second transmissivity smaller than the first transmissivity and is used for blocking light. The display panel can improve the influence of low temperature on the luminous efficiency of the luminous unit and reduce light leakage at the edge position of the luminous unit.

The invention discloses red and blue LED fluorescent powder for plant growth and a preparation method of the red and blue LED fluorescent powder. The chemical composition of the fluorescent powder is Na2Zr1-x-y (WO4) 3: xNi < 2 + > and yFe < 2 + >, x is the concentration of doped Ni < 2 + > and is equal to 0.01-0.1, and y is the concentration of doped Fe < 2 + > and is equal to 0.01-0.1. The fluorescent powder can emit 400-500nm high-intensity blue light and 660-700nm red light under the excitation of 320-360nm ultraviolet light, and can effectively promote the growth and development of plants corresponding to absorption spectrums of various pigments in the growth and photosynthesis of roots, stems and leaves of the plants. The raw materials of the fluorescent powder are all non-rare earth materials, so that the cost is low; the fluorescent powder is small in particle size, uniform in particle and high in luminous intensity; the raw materials and the product are non-toxic and environment-friendly, and are potential novel luminescent materials in the field of plant lighting LEDs.

This invention relates to the field of organic electroluminescence technology, specifically to a nitrogen-containing organic compound and its applications, and an organic electroluminescent device. The organic compound contains A structural units and B structural units, and optionally L structural units; the A structural unit has the structure shown in formula (I-1), the B structural unit has the structure shown in formula (I-2), and the L structural unit is a C-type heteroatom with or without A-type heteroatoms. 6‑30 An aromatic compound is formed by removing at least one of two removable hydrogen atoms to form a linking group, wherein the linking group optionally contains at least one substituent selected from combination A. When the organic compound of the present invention is used as the host material of the light-emitting layer in an organic electroluminescent device, it exhibits a lower driving voltage and higher device luminous efficiency.

The invention discloses a display panel and a display device.The display panel comprises a substrate, a pixel driving layer, a pixel defining layer, a plurality of light-emitting units, a packaging layer and a color filter layer, a first groove is formed in the position, corresponding to an opening area, of the packaging layer, and a second groove is formed in the position, corresponding to the opening area, of the packaging layer; the color filter layer comprises a plurality of color filter parts and a plurality of shading parts, the color filter parts are arranged in the first groove, the color filter parts comprise color filter parts of at least two colors, the shading parts are arranged in the non-opening area, and the shading parts are formed by overlapping the color filter parts of different colors. According to the display panel, the first groove is formed to contain the color filter part, the shading part is formed by overlapping the color filter parts of different colors, the manufacturing problem of the color filter parts is solved, the light emitting efficiency of the color filter parts is improved, and the display effect of the display panel is improved.

The present invention provides an electrochemiluminescence energy resonance transfer aptamer sensor for detecting HER2-ECD in breast cancer. The present invention uses Au NPs / g-C3N4 / PDDA composite luminescent material as a substrate and AuPt@ZIF-67 / pDNA substrate signal quenching solution, and utilizes the energy resonance transfer (ECL-RET) effect to achieve ultrasensitive detection of HER2-ECD. Compared with the traditional HER2-ECD detection method, the method of the present invention has the advantages of high sensitivity, strong specificity, rapid detection, convenient operation, low price of equipment and materials, and no pollution, thereby providing a new analytical method for the detection of HER2-ECD.

The invention provides a display panel and a display device. The display panel comprises a driving substrate, a light-emitting carrier plate and a thermoelectric conversion unit. The driving substrate includes a driving circuit layer and a plurality of driving electrodes. The light-emitting carrier plate comprises a glass substrate which is arranged on the driving substrate and is provided with a plurality of electrode through holes corresponding to the driving electrodes; the light-emitting units are arranged on the side, away from the driving substrate, of the glass substrate in an array mode and electrically connected with the corresponding driving electrodes through the electrode through holes. The thermoelectric conversion units are arranged between the adjacent light-emitting units, one side of each thermoelectric conversion unit is close to the light-emitting units, and the other side is close to the driving substrate; and the thermoelectric conversion unit is used for generating a potential difference under the action of a temperature difference between the driving substrate and the light-emitting unit, and is also used for generating a temperature difference between one side close to the light-emitting unit and one side close to the driving substrate under the action of driving current. The display panel can improve the influence of the temperature difference between the light-emitting carrier plate and the driving substrate on the characteristics of the driving device and the light-emitting efficiency of the light-emitting unit.

This application provides a liquid-cooled lamp, belonging to the field of lighting fixture technology, including a housing, a lighting assembly, a front liquid-cooling component, and a rear liquid-cooling component. The housing has an illumination cavity. The lighting assembly is disposed within the housing to generate light directed towards the illumination cavity. The front liquid-cooling component is disposed within the housing and located on the side of the lighting assembly facing the illumination cavity. The front liquid-cooling component is used to connect with the lighting assembly to reduce the temperature of the side of the lighting assembly facing the illumination cavity. The rear liquid-cooling component is disposed within the housing and located on the side of the lighting assembly away from the illumination cavity. The rear liquid-cooling component is used to connect with the lighting assembly to reduce the temperature of the side of the lighting assembly away from the illumination cavity. Compared to traditional single-sided heat dissipation or air cooling methods, the liquid-cooled lamp provided by this application has a larger heat dissipation area and higher heat exchange efficiency with its double-sided liquid-cooling design, which can quickly reduce the lamp assembly temperature and avoid light decay or shortened lifespan due to overheating.

The utility model relates to a photovoltaic - display integration quantum dot backlight module of display technical field, including photovoltaic element layer, optical coupling layer, quantum dot film layer and conductive and optical modulation layer who laminated and bonded in proper order, photovoltaic element layer is silicon -based solar cell panel, optical coupling layer includes high light transmittance polymer base, and the upper surface of high light transmittance polymer base is distributed micron -sized prism array or diffusing reflection particle, and the lower surface of high light transmittance polymer base is plated with anti -reflective film, quantum dot film layer includes main part and the perovskite quantum dot of embedding main part, and conductive and optical modulation layer includes conductive layer and optical modulation layer. The utility model reduces the dependency on power supply, realizes two -way light energy utilization, reduces power consumption, and the display picture color is more bright and colorful, real, improves optical uniformity while isolating external interference, ensures long -term stable light emission under the complex environment outdoors, relieves thermal stress, prevents material corrosion and cracking, and the module stability is high.

The invention discloses a zero-dimensional indium-based perovskite material with up and down conversion luminescence and a preparation method and application thereof, and belongs to the field of photoluminescence and halogen perovskite materials. The chemical formula of the zero-dimensional indium-based perovskite material is Cs2In1-x-y-zCl5 (H2O): xSb < 3 + >, yYb < 3 + >, zEr < 3 + >. The material has up-conversion and down-conversion luminescence properties; the material has an anti-thermal quenching behavior in a temperature changing process of up-conversion luminescence. The preparation method provided by the invention is a high-temperature solution boiling method, Sb, Yb and Er plasmas are introduced into zero-dimensional indium-based perovskite, the up-conversion and down-conversion luminescence properties of the material are realized, and meanwhile, the prepared zero-dimensional indium-based perovskite material has an anti-thermal quenching behavior. The whole process does not involve the use of hydrochloric acid, does not use other toxic solvents, only uses non-toxic and cheap distilled water as a solvent, and has the characteristic of green and environment-friendly chemical process. The zero-dimensional indium-based perovskite material with up-conversion and down-conversion luminescence has huge application potential in the field of non-contact temperature measurement.

The present invention provides a phosphorescent host material and a preparation method thereof and an organic electroluminescent device. The present invention belongs to the technical field of organic electroluminescent materials. The light-emitting device containing the phosphorescent host material of the present invention exhibits the characteristics of low driving voltage, high luminous efficiency and long life, and the comprehensive performance of the device is more excellent.

The invention provides a method for inhibiting end face failure of a laser, belongs to the technical field of semiconductor lasers, and is used for solving the technical problem that the electric field intensity at the junction of an epitaxial material and an optical coating material of the laser is too large. The method comprises the following steps: (1) cleaving a semiconductor laser wafer into bars, and evaporating first film layers on front cavity surfaces and rear cavity surfaces of the bars respectively; (2) evaporating an antireflection film on the front cavity surface of the bar, and evaporating a high-reflection film on the rear cavity surface of the bar; and the thickness of the first film layer is the thickness when the electric field intensity at the junction of the laser epitaxial material and the optical coating material is reduced to zero. According to the invention, the electric field intensity at the junction of the laser epitaxial material and the optical coating material is reduced to zero, the design of zero electric field intensity reduces non-radiative recombination excited by the electric field, and the purposes of improving the end surface damage threshold and improving the reliability are achieved.

The utility model provides an anti-high-temperature bump type LED display screen, which relates to the technical field of LED display screen display, and comprises a device frame, a support plate arranged at the bottom of the device frame, a support seat arranged at the bottom of the support plate, an LED display screen arranged inside the device frame, a main display screen arranged on the outer surface of the LED display screen, and fixing pastes arranged on the side surfaces of the LED display screen and the device frame. The fixing paste is fixedly connected with the device frame, a heat dissipation structure is arranged on the back of the device frame and comprises a control frame, a plurality of ventilation holes are formed in the side face of the control frame, a plurality of containing plates are arranged in the control frame, an air inlet fan is arranged at the top of the first containing plate, and air blowing blades are arranged on the outer surface of the air inlet fan and rotationally connected with the air inlet fan. An air inlet pipe is arranged on the side face of the air inlet fan and communicated with an air outlet pipe, an air outlet fan is arranged on the side face of the air outlet pipe, air outlet blades are arranged on the outer surface of the air outlet fan and rotationally connected with the air outlet fan, and therefore the heat dissipation efficiency in the LED display screen is improved.

The utility model discloses a high light -efficient corn lamp, including lamp holder seat, lamp body, lamp shade and bottom cover, the lamp holder seat locates one end of lamp body, bottom cover locates the other end of lamp body, the lamp shade is located lamp body's outer surface, the lamp body includes heat dissipation main part and FCOB lamp strip, the heat dissipation main part is cylindrical, the front of heat dissipation main part is equipped with the mounting groove, the back of heat dissipation main part is equipped with a plurality of vertical fins, FCOB lamp strip can be detachably installed in mounting groove, bottom cover is circular, and bottom cover is installed in the bottom of heat dissipation main part, the back of heat dissipation main part and the bottom cover of circular form heat dissipation channel, and heat dissipation main part directly carries out heat dissipation to FCOB lamp strip, and the vertical fin of heat dissipation main part back increases the heat dissipation surface area, and heat dissipation channel is favorable to heat rapid discharge, can effectively give FCOB lamp strip heat dissipation, prevents the temperature of FCOB lamp strip from being too high and leads to luminous efficiency to drop.