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48results about How to "Low luminous efficiency" patented technology

Light-emitting diode and method for manufacturing same, integrated light-emitting diode and method for manufacturing same, method for growing a nitride-based iii-v group compound semiconductor, substrate for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display and electronic instrument, electronic device and method for manufacturing same

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
Owner:SONY CORP

Light-emitting diode and method for manufacturing same, integrated light-emitting diode and method for manufacturing same, method for growing a nitride-based iii-v group compound semiconductor, substrate for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, light-emitting diode illuminating device, light-emitting diode display and electronic instrument, electronic device and method for manufacturing the same

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
Owner:SONY CORP

Organic Electroluminescence Device

An organic electroluminescence device includes an organic layer disposed between at least one pair of electrodes, wherein the organic layer includes at least one fluorescent compound selected from compounds represented by the following general formulae (1) and (2):
    • wherein X1 to X16 each independently represents a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, a linear, branched or cyclic alkoxy group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted aryloxy group having 6 to 30 carbon groups, a substituted or unsubstituted arylamino group having 6 to 30 carbon atoms, a substituted or unsubstituted alkylamino group having 1 to 30 carbon atoms, a substituted or unsubstituted arylalkylamino group having 7 to 30 carbon atoms or a substituted or unsubstituted alkenyl group having 8 to 30 carbon atoms; a pair of adjacent groups represented by X1 to X2 and a pair of adjacent substituents to groups represented by X1 to X2 may form a cyclic structure in combination; a pair of adjacent groups represented by X3 to X16 and a pair of adjacent substituents to groups represented by X3 to X16 may form a cyclic structure in combination; when the pair of adjacent substituents are aryl groups, the pair of substituents may be a single group; and in the formulae at least one of the substituents of X3 to X14 or X16 includes amino group.
Owner:RITDISPLAY

Ligand-modified quantum dot materials, methods of fabricating liquid crystal display panels and liquid crystal display panels

The present application provides a ligand-modified quantum dot material, a method of fabricating a liquid crystal display panel, and a liquid crystal display panel. The ligand-modified quantum dot material of the present application can occur a polymerization with the ligand-modified quantum dot material under ultraviolet irradiation to form a polymer, while the polymer deposits on a substrate to form a polymer film, which can replace the PI alignment film, so that an alignment process of liquid crystal is simplified, and a cost is economized; simultaneously, display quality of a liquid crystal display panel can be improved by the quantum dots anchored in the polymer film. The method of fabricating the liquid crystal display panel of the present application eliminates the fabricating process of the PI alignment film, the method has simple process and low cost, and a liquid crystal display panel obtained thereby has better display quality. The liquid crystal display panel of the present application utilizes the polymer film, which is obtained by polymerizing the ligand-modified quantum dot material and a polymerizable monomer, to replace the PI alignment film, so as to greatly enhance quality of the panel, and to have a low fabricating cost.
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD

Ligand-modified quantum dot materials, methods of fabricating liquid crystal display panels and liquid crystal display panels

The present application provides a ligand-modified quantum dot material, a method of fabricating a liquid crystal display panel, and a liquid crystal display panel. The ligand-modified quantum dot material of the present application can occur a polymerization with the ligand-modified quantum dot material under ultraviolet irradiation to form a polymer, while the polymer deposits on a substrate to form a polymer film, which can replace the PI alignment film, so that an alignment process of liquid crystal is simplified, and a cost is economized; simultaneously, display quality of a liquid crystal display panel can be improved by the quantum dots anchored in the polymer film. The method of fabricating the liquid crystal display panel of the present application eliminates the fabricating process of the PI alignment film, the method has simple process and low cost, and a liquid crystal display panel obtained thereby has better display quality. The liquid crystal display panel of the present application utilizes the polymer film, which is obtained by polymerizing the ligand-modified quantum dot material and a polymerizable monomer, to replace the PI alignment film, so as to greatly enhance quality of the panel, and to have a low fabricating cost.
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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