The invention relates to the technical field of
semiconductor devices, in particular to a novel electric pump AlGaN-based deep
ultraviolet laser diode and a preparation method thereof. The structure comprises a stacking structure, a
passivation layer, an n-
type metal electrode layer and a p-
type metal electrode layer, a substrate, a template layer, a bottom DBR layer, a step-shaped n-type AlGaN layer, a micro-cavity LED active region layer, a p-type AlGaN layer, a step-shaped p-type AlGaN
contact layer, a top DBR layer, a lower
waveguide layer, an LD multi-
quantum well layer and an upper
waveguide layer are stacked on the stacking structure in sequence. The
ridge surface width of the p-type AlGaN
contact layer is greater than or equal to 100 microns; the
passivation layer covers the surface and the side wall of the stacked structure, and
electrode layer growth channels are formed in the step surfaces of the n-type AlGaN layer and the p-type AlGaN
contact layer respectively; and the n-
type metal electrode layer and the p-type
metal electrode layer respectively penetrate through the corresponding electrode layer growth channels. The advantages are that the wide
ridge design improves the light output power, the performance is excellent, and the
etching damage is reduced.