311results about "Semiconductor laser structural details" patented technology

A hybrid silicon photonic integrated circuit (48) for an FMCW LIDAR device (14), comprises a first SOI substrate (70) having a trench (80), a first optical waveguide (76) monolithically formed on or in the first SOI substrate (70) and abutting the trench (80), and a heterogeneously integrated laser chip (50) received upside down in the trench (80). A free-space coupler (36) is monolithically formed on or in the first SOI substrate (70), connected to the laser chip (50) via the first optical waveguide (76) and emits the light generated by the laser chip (50) into free space. A detector (32) is detects a superposition of reflected light, which was emitted by the free-space coupler (36) and reflected at an object (12) to which a range shall be measured, and reference light, which was not reflected at the object (12).

An FM LIDAR system is described that includes a frequency modulated LIDAR system that incorporates a laser source that is optically coupled to a whispering gallery mode optical resonator. Light from the laser that is coupled into the whispering gallery mode optical resonator is coupled back out as a returning counterpropagating wave having a frequency characteristic of a whispering gallery mode of the optical resonator. This returning wave is used to reduce the linewidth of the source laser by optical injection. Modulation of the optical properties of the whispering gallery mode optical resonator results in modulation of the frequency of the frequencies supported by whispering gallery modes of the resonator, and provides a method for producing highly linear and reproducible optical chirps that are highly suited for use in a LIDAR system. Methods of using such an FM LIDAR system and vehicle assisting systems that incorporate such FM LIDAR systems are also described.

The invention belongs to the field of lasers, and discloses a growth method for reducing laser Ith through N grating burying, which subversively adopts an N-type grating structure, uses a built-in P-N junction formed by the N-type grating structure and a subsequent P-type buried layer as a natural and efficient current blocking layer, and structurally eliminates a current leakage path. Afterwards, in the heating stage, trace arsine is introduced to carry out atomic-scale protection on the sensitive grating morphology, at the optimal mass transport temperature, the high mobility characteristic of indium atoms is utilized to carry out shape-preserving filling on grating grooves, flawless preliminary planarization is achieved, and through variable-temperature thickening growth and high-temperature annealing in the pure phosphorus atmosphere, the high-temperature-resistant grating is obtained. And performing quality optimization and defect repair on the buried layer and the key interface. The series of linked steps ensure that the indium phosphide buried layer with flat atomic scale and complete crystal lattice can grow on the fragile N-type grating, and ensure that a high-quality covering layer and an active region grow on the N-type grating.

An optoelectronic device (10) comprises a laser light-emitting component (100) and an optical component (200) with an optical waveguide (201). The laser light-emitting component (100) has a light-exit surface (120) for emitting the laser light and at least one first alignment structure (130) on a first end face (110). The optical component (200) has a light-entry surface (220) on a second end face (210) where the laser light can be coupled into the optical waveguide (201), and at least one second alignment structure (230).The first and second alignment structures (130, 230) are designed to be complementary to each other in order to align the laser light emitting component (100) to the optical component (200) in such a way that the light exit surface (120) and the light entry surface (220) are opposite each other, whereby the laser light is coupled into the optical waveguide (201) in the case of emission of laser light by the laser light emitting component (100).

A vertical cavity surface emitting laser includes an oxide substrate having a first face and a second face at an opposite side from the first face; a semiconductor section disposed on the first face; a dielectric filter layer disposed between the semiconductor section and the first face and having a reflective spectrum configured to provide an optical window; a first DBR mirror; and a second DBR mirror disposed at a curved surface of the second face. The first DBR mirror, the semiconductor section, the dielectric filter layer, the oxide substrate, and the second DBR mirror are arranged in a first axial direction to form an extended cavity. The semiconductor section is disposed between the dielectric filter layer and the first DBR mirror, and includes a p-type III nitride region, an n-type III nitride region, and a III nitride active region between the p-type and n-type III nitride regions.

A first layer, a first spacer layer, and a second layer of a semiconductor wafer can be etched to produce a plurality of columnar structures extending from the substrate layer and including a first optical cavity situated about the first gain medium, a second optical cavity situated about the second gain medium, and a first spacer region contacting the first gain medium and the second gain medium. Also, a photonic microparticle formed from a layered semiconductor wafer and of a columnar structure having a first optical cavity situated about a first gain medium, a second optical cavity situated about a second gain medium, and a first spacer region contacting the first gain medium and the second gain medium. The first optical cavity and the second optical cavity in the photonic microparticle are each capable of generating laser light with a distinct spectral peak when energetically excited.

Example methods, compositions and structures are presented whereby sub-10-nm-thick strain-relieving Si1-xGex layers can be realized by Ge ion implantation, into, and selective oxidation of, Si(111) wafers. The resulting Ge-rich layers are fully strain relaxed via a network of misfit dislocations at the Si / Si1-xGe, interface, which do not propagate through the Si1-xGex film. The dislocation network has been found to coincide with a periodic variation in the composition at the Si / Si1-xGex interface and is believed to result from the defect-medicated diffusion of Si atoms from the Si substrate through the Si1-xGex layer to the above SiO2 layer. The epitaxial growth of GaAs on such ultra-thin substrates is demonstrated, presenting a promising approach for solving the long-standing challenge of local, monolithic integration of III-V optoelectronics on the Si platform.

The invention discloses a silicon-based indium phosphide laser and a preparation method thereof, and relates to the technical field of semiconductor devices, the silicon-based indium phosphide laser comprises a silicon substrate, a composite insulating layer, a Van der Waals buffer layer and an indium phosphide epitaxial structure which are stacked in sequence; the indium phosphide epitaxial structure comprises a first epitaxial structure stacked on the Van der Waals buffer layer and a second epitaxial structure stacked on the first epitaxial structure; the first epitaxial structure at least comprises a lower cladding layer, a lower limiting layer, a lower waveguide layer, a spacing layer, a multi-quantum well active region, an upper limiting layer, an etching stop layer, an upper waveguide layer and an upper cladding layer which are sequentially stacked, a Bragg grating is manufactured in the upper waveguide layer, and the second epitaxial structure comprises a regrowth cladding layer and a contact layer which are sequentially stacked; the Van der Waals buffer layer is a two-dimensional material film, and the problems of lattice mismatch, thermal expansion coefficient mismatch and polarity structure difference of integration of the silicon substrate and the InP epitaxial layer are thoroughly solved from a physical mechanism by introducing the single-layer two-dimensional material Van der Waals buffer layer.

The application provides a laser chip with improved reliability and a preparation process thereof, and aims to solve the technical problem that an edge-emitting laser is prone to end face failure.The laser chip comprises a substrate, the back surface of the substrate is provided with an N electrode, the front surface of the substrate is provided with an epitaxial material, the top layer of the epitaxial material is an ohmic contact layer, the epitaxial material is provided with a waveguide, and the vicinity of the waveguide is a waveguide region; an insulating medium layer is arranged on the surface of the epitaxial material, the waveguide region and the insulating medium layer are provided with a P electrode, but the ohmic contact layer in the waveguide region is not provided with the insulating medium layer, and the P electrode is in contact with the ohmic contact layer; the end surface of the laser chip is provided with an electrode-free area, and the electrode-free area is not provided with the insulating medium layer and the P electrode above the electrode-free area.The application further comprises a preparation method of the laser chip.The electrode-free area is arranged on the end surface of the laser, and the electrode-free area can improve the COD threshold level and improve the reliability.

A dry etching method for indium-containing III-V compound semiconductor materials, relating to the field of semiconductor laser processing technology, solves the problem of volatile InCl during etching of indium-containing compound semiconductor laser materials in existing technologies. x Deposition leads to decreased etching rates, cavity contamination, and high-temperature assisted etching causes mask loss, morphology degradation, and process instability. This invention addresses these issues by setting a cycle program that alternates between etching and rinsing pulses. During the etching stage, H2 is introduced to suppress the formation of non-volatile InCl3 products and simultaneously convert InCl3 products into InCl2, effectively inhibiting byproduct formation and improving etching efficiency. During the physical rinsing stage, Ar is used to effectively remove non-volatile InCl3 adhering to the surface of the etched material. x The product exposes the semiconductor substrate, promoting chemical pulses to carry out chemical reactions to etch the substrate, effectively preventing cavity contamination and a decrease in etching uniformity, and significantly improving the controllability and repeatability of the etching morphology.

The invention relates to the technical field of semiconductor lasers, in particular to a high-speed communication vertical-cavity surface-emitting laser and a preparation method thereof.The high-speed communication vertical-cavity surface-emitting laser comprises a substrate, an epitaxial structure is arranged on the substrate and comprises an active area, a transition DBR layer is arranged on the active area, and a tunnel junction is arranged in the center of the transition DBR layer; the tunnel junction comprises a P-type high-concentration C doping layer and an N-type high-concentration Te doping layer, and a top DBR layer is arranged on the transition DBR layer. The tunnel junction is used for replacing an oxide layer of a traditional oxidizing VCSEL and is used for providing current limitation and optical limitation. According to a traditional oxide layer, the oxidation depth is controlled by oxidizing Al0. 98Ga0. 02As to achieve current and optical limitation of the oxidation caliber, Al interface oxidation can be avoided by replacing the traditional oxide layer with a tunnel junction structure, and the problem of further growth of defects can be prevented. An oxide layer is replaced by a tunnel junction limiting structure, higher emission uniformity and higher repeatability manufacturing can be achieved, the size of an oxidation aperture can be accurately defined, and the stability of a mode can be controlled.

A laser source may include a laser diode, a modulation device, and a feedback device. The modulation device may include an electric power source and may be suitable for modifying a current intensity applied to the laser diode, which may modify an emission frequency of the laser diode. The feedback device may be suitable for modifying a current intensity applied to the laser diode by the electric power source as a function of the electromagnetic radiation emitted by the laser diode.

The present application relates to an optical chip structure and a manufacturing method therefor. The method comprises: providing a base and a semi-finished chip, wherein the base comprises a first substrate, an isolation dielectric layer formed on the first substrate, a first semiconductor optical device, and a first waveguide, the semi-finished chip comprises a second substrate and a semi-finished thin-film layer located on one side of the second substrate, the semi-finished thin-film layer and the first waveguide are made of different materials, the first substrate comprises a silicon substrate; forming a recess in the isolation dielectric layer, wherein the first waveguide is at least partially located between the recess and the first substrate; bonding the semi-finished chip in the recess by means of the semi-finished thin-film layer, so that the semi-finished thin-film layer is optically coupled to the first waveguide; removing the second substrate of the semi-finished chip to form a second semiconductor optical device; and carrying out metallization to form an electrode structure separately connected to the first semiconductor optical device and the second semiconductor optical device.

The application discloses a laser light source packaging method based on silicon nitride ceramics and relates to the technical field of laser light source packaging.The laser light source packaging method is composed of silicon nitride ceramics, a laser chip, silver powder resin glue, aluminum oxide, epoxy resin and N-methyl pyrrolidone raw materials.The light source packaging steps are as follows: firstly, the position of the center point of the laser in the laser cavity of the silicon nitride ceramics is measured by using a screw micrometer; the laser light source packaging method based on silicon nitride ceramics measures the position of the center point of the silicon nitride ceramic circuit plate by using a screw micrometer, marks the position by using silver powder resin glue, and stabilizes the light spot line by using laser light source projection technology, so that the laser pad plate of the silicon nitride ceramics is aligned and packaged with the envelope frame, the laser light cannot be offset, the quality of the laser light source packaging based on silicon nitride ceramics is high, the packaging effect is good, cost is saved, and the market use is widened.

This invention relates to a packaging method for GaAs-based high-power laser chips to improve heat dissipation efficiency. The method includes the following steps: adhering a graphene film to the p-side of the GaAs-based high-power laser chip, and then using a graphene-In52Sn48 alloy hybrid solder to package it onto a base heat sink via low-temperature soldering. This invention, by covering the p-side of the chip with a graphene film and then soldering it to the base heat sink with the graphene-In52Sn48 alloy hybrid solder, increases the contact area between the chip and the heat sink. The high thermal conductivity of graphene allows for rapid transfer of waste heat generated in the active region to the heat sink, reducing the thermal gradient of the chip and significantly enhancing the heat dissipation effect of the packaged module. Compared to traditional methods, the reliability, stability, and heat dissipation effect of GaAs-based high-power lasers packaged using this method are significantly improved, while also extending the laser's lifespan.

The invention relates to a photonic chip (10) having a heterogeneous III-V semiconductor structure on a second semiconductor comprising, in a stacking direction (Δ): a waveguide (11) made of a first III-V semiconductor material, referred to as the lll-V waveguide, comprising a first confinement layer (110), an active layer (111) and a second confinement layer (112), a waveguide (12) made of a second semiconductor material, referred to as the SC waveguide, comprising a layer (120) of the second semiconductor material. The first confinement layer (110) comprising a first portion (110a) on top of the active layer (111) and at least one extension (110b) extending laterally beyond the active layer (111), the extension (110b) having a thickness (Eb) in the stacking direction that is greater than that (Ea) of the first portion (110a) so as to define an electrical contact face (116) located before the first portion (110a) in the stacking direction (Δ).

The invention relates to the technical field of semiconductor materials, and discloses an III-V wafer, a preparation method of the III-V wafer, an on-chip light source and a preparation method of the on-chip light source. The III-V wafer comprises a substrate (1), an epitaxial layer (2) and a strain superlattice layer (3), wherein the epitaxial layer (2) and the strain superlattice layer (3) are sequentially arranged on the substrate (1). Wherein the strained superlattice layer (3) comprises a strained superlattice layer I (31) and a strained superlattice layer II (32), the strained superlattice layer II (32) is in contact with the epitaxial layer (2), and the lattice constant of the material of the strained superlattice layer I (31) is smaller than that of the material of the strained superlattice layer II (32). According to the III-V wafer provided by the invention, the strain superlattice layers with different lattice constants are arranged on the epitaxial layer, so that interface defects can be eliminated, the luminous efficiency of an on-chip light source is improved, the service time of the on-chip light source is prolonged, and the reliability is enhanced.

A semiconductor laser element includes: a semiconductor substrate; a semiconductor laminate; a first electrode in which a ridge portion of the semiconductor laminate is embedded; and a second electrode. A first region of a side surface of the first electrode is separated from a first end surface in such a manner to extend away from the first end surface as the first region extends away from the ridge portion to both sides. A shortest distance between a first side surface and the first region is smaller than each of a shortest distance between a third side surface and a third region and a shortest distance between a fourth side surface and a fourth region. The first region does not include a corner in a range satisfying D1≤S1 and D1≤S2.

The invention relates to the technical field of photoelectric elements, and discloses a laser element with a two-dimensional Moire superlattice layer. Comprising a substrate layer, an n-type coating layer, the two-dimensional Moire superlattice layer, a lower waveguide layer, a quantum well active region, an electron blocking layer, an upper waveguide layer, a p-type coating layer and a p-type contact layer from bottom to top in sequence. The two-dimensional Moire superlattice layer is introduced between the n-type coating layer and the lower waveguide layer, the limiting effect of current carriers can be effectively improved, leakage current is reduced, meanwhile, the superlattice layer has a unique energy band structure, light field distribution of a device is optimized, in addition, by optimizing the structural design and the doping process of the p-type region, the light field distribution of the device is optimized, and the light field distribution of the device is optimized. And the electrical performance of the device can be obviously improved.

To provide an electronic device capable of inspecting each of a plurality of electronic components mounted on a mounting substrate.SOLUTION: An electronic device 1 comprises a mounting substrate 2 having a wiring pattern 22, and a plurality of electronic components mounted on the mounting substrate 2 and connected in series via the wiring pattern 22. The wiring pattern 22 has a plurality of inspection pads 221, 222, 223d to 223f formed on both sides of each electronic component in the series path section 10 where a plurality of electronic components are connected in series, to which probes 11 for inspecting each electronic component are contacted.SELECTED DRAWING: Figure 1

The invention relates to the technical field of semiconductor devices, in particular to a wafer and a preparation process thereof, and a laser device and a preparation process thereof, the wafer comprises a P-surface electrode, a substrate, a metal reflective layer, an epitaxial layer and an N-surface electrode which are stacked; a CuSiC alloy base plate is adopted as the substrate; and the epitaxial layer is an AlGaInP epitaxial layer after the original substrate is removed, and is bonded on the metal reflective layer. According to the technical scheme provided by the invention, the substrate adopts the CuSiC alloy substrate and is provided with the metal reflective layer, so that the LED lamp has the advantages of high luminous efficiency, high percent of pass and low manufacturing cost.

Silicon photonic crystal (10; 10'; 10") comprising periodic silicon structures (12) contiguous with voids (14), and a silicon resonant cavity (16) consisting of silicon nanowires (18) entirely made of silicon with uniform doping, said nanowires acting as active medium of the photonic crystal.

The invention provides a 60KW high-power single-mode semiconductor laser. The 60KW high-power single-mode semiconductor laser comprises an N aluminum electrode shell, a GaN substrate is arranged at the bottom of the inner side wall of the N aluminum electrode shell, an n-ALGaN layer is arranged on the upper surface of the GaN substrate, a first GaN layer is arranged on the upper surface of the n-ALGaN layer, an INGANactive layer is arranged on the upper surface of the first GaN layer, and a second GaN layer is arranged on the upper surface of the INGANactive layer. The GaN substrate and the SiN layer are used as the substrate of the laser to improve the light transition probability, then the n-ALGaN layer and the p-ALGaN layer are used as the epitaxial layers of the laser to improve the voltage resistance of the laser, and then the first GaN layer, the INGANactive layer and the second GaN layer are used to improve the limiting capability of the laser to holes and electrons, so that the performance of the laser is improved. The light wave generated by compounding can be effectively limited, the radiation efficiency is greatly improved, better ohmic contact can be formed between the p-GaN layer and the P aluminum electrode, the ohmic contact resistance and the power consumption of the laser are reduced, and the photoelectric conversion rate of the laser can reach 80%.

A semiconductor optical device includes a substrate having an optical waveguide, a gain section formed of a compound semiconductor having an optical gain and bonded to an upper surface of the substrate, the gain section having a first mesa, and a first wiring line electrically connected to the gain section. The first mesa of the gain section is optically coupled to the optical waveguide. The substrate includes a first layer, a second layer, and a third layer. The first layer has a higher thermal conductivity than the second layer. The second layer is stacked on the first layer. The third layer is stacked on the second layer. A recess provided in the substrate extends through the third layer to the second layer in the thickness direction. The first wiring line extends from the first mesa of the gain section to the recess.

The application discloses a fixed semiconductor wafer cleaving device, which has a scribing device and a splitting device, and the two parts have fixing mechanisms and processing mechanisms respectively and can move along guide rails. A wafer mounting mechanism is arranged in the middle of the cleaving device, a wafer is fixed on the wafer mounting mechanism through a wafer ring, vacuum adsorption is carried out by a scribing fixing mechanism, and a scribing processing mechanism is used for scribing the wafer at a specified position. A splitting fixing mechanism supports the wafer at the lower part of the wafer mounting mechanism, a ceramic knife of a splitting processing mechanism is pressed against the back of a scribe mark of the wafer, the wafer is cleaved and fractured along the scribe mark, and thus the automatic processing of the fixed wafer is realized.

A semiconductor device includes a first substrate, a semiconductor layer consisting of a nitride-based compound semiconductor, and a bonding layer bonded to the first substrate and the semiconductor layer between the first substrate and the semiconductor layer, and containing at least one of constituent elements of the nitride-based compound semiconductor.

In at least one embodiment, the method is used to produce semiconductor lasers (1) and comprises the steps: - providing a plurality of laser emitters (2), at least one facet (22) of each of the laser emitters (2) being exposed, - electrically or optically pumping the laser emitters (2) such that the laser emitters (2) emit laser radiation (L), - generating a coating (3) on the facets (22), a local layer thickness (t) of the coating (3) over the facets (22) being determined by a local intensity of the laser radiation (L).