896results about "Semiconductor laser structural details" patented technology

Horizontal Cavity Surface Emitting Lasers (HCSELs) with angled facets may be fabricated by a chemical or physical etching process, and the epitaxially grown semiconductor device layers may be transferred through a selective etch and release process from their original epitaxial substrate to a carrier wafer.

Electro-absorption modulators (EAM) and monolithically integrated electro-absorption modulated lasers (EML) and methods of fabrication are disclosed. Vertically stacked waveguides for a distributed feedback (DFB) laser, an electro-absorption modulator (EAM) and a passive output waveguide are vertically integrated, and the DFB laser, EAM and output waveguide are optically coupled using laterally tapered vertical optical couplers. Laterally tapered vertical optical couplers provides an alternative to conventional butt-coupling of a laser and EAM, offering improved reliability for high power operation over extended lifetimes. Optionally, the EML comprises monolithically integrated electronic circuitry, e.g., driver and control electronics for the DFB laser and EAM. Beneficially, integrated EAM driver and control circuitry comprises a high-speed electro-optical control loop for very high-speed linearization and temperature compensation, e.g. to enable advanced modulation schemes, such as PAM-4 and DP-QPSK, for analog optical data center interconnect applications. Some embodiments are compatible with fabrication using a single epitaxial growth.

The invention relates to an optical chip structure and a preparation method thereof, and the method comprises the steps: providing a substrate and a semi-finished chip, the substrate comprises a first substrate, an isolation dielectric layer formed on the first substrate, a first semiconductor optical device and a first waveguide, and the semi-finished chip comprises a second substrate and a semi-finished film layer located at one side of the second substrate, the semi-finished product film layer and the first waveguide are made of different materials, and the first substrate comprises a silicon substrate; forming a groove in the isolation dielectric layer, wherein at least part of the first waveguide is located between the groove and the first substrate; bonding the semi-finished product chip in the groove through the semi-finished product film layer, so that the semi-finished product film layer is optically coupled with the first waveguide; removing the second substrate of the semi-finished chip to form a second semiconductor optical device; and metallization is carried out to form electrode structures which are respectively connected with the first semiconductor optical device and the second semiconductor optical device.

The invention discloses a silicon substrate gallium nitride wafer containing a large mismatch stress regulation and control structure and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The silicon substrate gallium nitride wafer containing the large mismatch stress regulation and control structure is formed by stacking a silicon substrate, an aluminum nitride amorphous film barrier layer, an ultrathin porous aluminum oxide weak bonding decoupling layer, an aluminum nitride single crystal film nucleating layer template layer and a gallium nitride single crystal film quality improvement layer in sequence. According to the invention, by regulating and controlling the pore size and pore density in the ultrathin porous alumina weak bonding and decoupling layer, the weak bonding and decoupling effect of the aluminum nitride single crystal film nucleating layer template layer on the ultrathin porous alumina weak bonding and decoupling layer is regulated and controlled; and therefore, large mismatch stress regulation and control of the silicon substrate gallium nitride material are realized, and the crack-free thickness, the material crystallization quality and the material preparation efficiency are improved. The silicon substrate gallium nitride wafer containing the large mismatch stress regulation and control structure can be applied to development and production of gallium nitride-based power electronic devices, microwave radio frequency devices and optoelectronic devices.

To reduce the wiring inductance when establishing electrical connection between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A shield suppresses flow of electromagnetic waves to / from an outside of the semiconductor laser driving apparatus for at least one of the semiconductor laser and the laser driver.

A hybrid silicon photonic integrated circuit (48) for an FMCW LIDAR device (14), comprises a first SOI substrate (70) having a trench (80), a first optical waveguide (76) monolithically formed on or in the first SOI substrate (70) and abutting the trench (80), and a heterogeneously integrated laser chip (50) received upside down in the trench (80). A free-space coupler (36) is monolithically formed on or in the first SOI substrate (70), connected to the laser chip (50) via the first optical waveguide (76) and emits the light generated by the laser chip (50) into free space. A detector (32) is detects a superposition of reflected light, which was emitted by the free-space coupler (36) and reflected at an object (12) to which a range shall be measured, and reference light, which was not reflected at the object (12).

The invention discloses a high-power semiconductor laser array which is formed by sequentially and alternately placing and welding n semiconductor laser chips and n + 1 tungsten copper heat sinks, the width of each tungsten copper heat sink is larger than that of each semiconductor laser chip, and the upper surface and the lower surface of each semiconductor laser chip are wrapped by the tungsten copper heat sinks to form a sandwich structure. The emergent end face of the semiconductor laser chip extends out of the edge of the tungsten copper heat sink by 10-20 microns. The invention also discloses a packaging method. The current injection density of the laser module at the laser emitting end is low, so that the optical power density of the emitting end is reduced, the reliability of a device is improved, and the service life of the device is prolonged.

A GaN substrate includes a main surface 1 inclined by 0° to 10° from a (0001) crystal plane which is a Ga-polar plane, and including a Si-doped GaN layer on at least a surface of the main surface 1, in which the Si-doped GaN layer has a Si concentration of 1×1018 atoms / cm3 or more, and a total of bottom areas of recessed defects on a surface of the Si-doped GaN layer is 15% or less of an area of the entire surface of the Si-doped GaN layer.

The invention provides a heat dissipation structure for a bar chip in a semiconductor laser, which can improve the heat dissipation capability of the semiconductor laser, ensure the working reliability of the laser and prolong the service life of the laser. The solar cell sequentially comprises a positive plate, a first waveguide layer, a first light limiting layer, an active layer, a second waveguide layer, a second light limiting layer, a substrate layer and a negative plate from top to bottom, wherein the outer surfaces of the positive plate and the negative plate are respectively connected with a secondary heat sink; the sum of the thicknesses formed by the first waveguide layer, the first light limiting layer, the active layer, the second waveguide layer and the second light limiting layer is smaller than the thickness of the substrate layer, and the thickness of the substrate layer is 40-110 microns; and a graphene film layer is deposited on the negative electrode surface of the substrate layer.

Semiconductor light-emitting apparatus includes substrate, submount above substrate, and semiconductor laser above submount. Semiconductor laser and submount are bonded to each other with first bonding material. Substrate and submount are bonded to each other with second bonding material. Submount has first region and second region near substrate, first region being a region on which spacer is disposed, and second region being a region without spacer. Submount is bonded to substrate by covering at least a portion of second region with second bonding material.

The invention discloses a laser chip (600) preparation method, a laser chip (600) and an optical module (200). A substrate (620) containing an aluminum-indium-gallium-arsenic quantum well structure is grown on a substrate layer (610) made of an InP material; forming a SiO2 mask layer (630) on the upper surface of the substrate (620) through photoetching, and performing mask etching on the substrate (620) to obtain a mesa structure (640); growing a buried layer (650) along the mesa structure (640) by using MOCVD CBr4 in-situ cleaning; growing a barrier layer (660) along the buried layer (650) using MOCVD; then continuing to grow to obtain a laser chip (600) of a preset thickness; the etching surface of the mesa structure (640) can be protected by the buried layer (650), so that the outer surface of the mesa structure (640) is prevented from being oxidized by air, the difficulty of regrowth and facet coating in the subsequent process of obtaining the mesa structure (640) is reduced, and meanwhile, the surface appearance can be improved due to the fact that the degree of air oxidation of the outer surface of the mesa structure (640) is reduced, and the performance of the mesa structure (640) is improved. And thus, the performance of the AlInGaAs quantum well laser chip (600) is ensured.

Provided are a light emitting device capable of suitably shaping light from a plurality of light emitting elements, a manufacturing method for a light emitting device, and a distance measuring device.A light emitting device of the present disclosure includes: a substrate; a plurality of light emitting elements provided on a first surface of the substrate; and a plurality of structure bodies provided on a second surface of the substrate and through which light emitted from the plurality of light emitting elements is transmitted. At least any of the structure bodies includes a first structure body through which a first portion of the light is transmitted and a second structure body having a function different from a function of the first structure body and through which a second portion of the light is transmitted.

The invention discloses a diamond on-chip integrated laser and a preparation method thereof, and relates to the technical field of integrated optics, and the on-chip integrated laser comprises a high-power semiconductor laser, a diamond substrate and a waveguide. Wherein the same diamond substrate is divided into a laser integration area and a waveguide integration area; the high-power semiconductor laser is integrated in the laser integration area of the diamond substrate through a thin film circuit; the waveguide is integrated in the waveguide integration area and comprises a waveguide material layer, diamond films are evenly plated on the upper portion and the lower portion of the waveguide material layer and the surfaces of the two sides, in non-laser coupling with the high-power semiconductor laser, of the waveguide material layer, and the end, not plated with the diamond films, of the waveguide material layer is aligned with a light outlet of the high-power semiconductor laser. According to the invention, the luminous efficiency of the integrated optical chip is improved, the thermal crosstalk problem of the chip is solved, and the stable output of the whole laser is ensured.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

The invention provides a photoelectric chip common packaging piece, an optical communication module and a preparation method, the photoelectric chip common packaging piece comprises a carrier plate, an optical chip and an electric chip, one side of the carrier plate is provided with a mounting surface, the mounting surface is provided with an electric interconnection structure, the carrier plate is internally provided with a conductive through hole and an optical interconnection structure, and the conductive through hole is electrically connected with the electric interconnection structure; the optical chip and the electric chip are both arranged on the mounting surface of the carrier plate, the optical chip is electrically connected to the electric chip through an electric interconnection structure, one side, facing the mounting surface, of the optical chip comprises an optical device, and an optical signal emitted by the optical device penetrates through the carrier plate through the optical interconnection structure. Compared with the prior art, efficient conversion and transmission of optical signals and electric signals are achieved, the interconnection distance between chips is shortened to a large extent, signal transmission loss and delay are reduced, signal integrity is improved, and therefore reliable transmission of high-frequency signals is achieved.

This semiconductor device manufacturing method comprises: a step for preparing a main substrate, a base semiconductor part formed above the main substrate, and a compound semiconductor part formed on the base semiconductor part; and a step for separating the base semiconductor part and the compound semiconductor part so as to form a resonator surface on at least the compound semiconductor part, and separating the base semiconductor part and the compound semiconductor part into a plurality of element parts.

The invention discloses a silicon substrate gallium nitride semiconductor wafer and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The silicon substrate gallium nitride semiconductor wafer is composed of a silicon single crystal substrate, a silicon carbide single crystal thin film barrier layer, an ultrathin porous titanium nitride weak bonding decoupling layer, an aluminum nitride single crystal thin film nucleating layer template layer and a gallium nitride single crystal thin film quality improving layer which are stacked in sequence. According to the invention, the pore size and the pore density in the ultrathin porous titanium nitride weak bonding decoupling layer are regulated and controlled, so that the weak bonding decoupling effect of the aluminum nitride single crystal film nucleating layer template layer on the ultrathin porous titanium nitride weak bonding decoupling layer is regulated and controlled; therefore, large mismatch stress regulation and control and crack-free thickness improvement of the silicon substrate gallium nitride material are realized, and material crystallization quality and preparation efficiency are improved. The silicon substrate gallium nitride semiconductor wafer can be applied to development and production of gallium nitride-based power electronic devices, microwave radio frequency devices and optoelectronic devices.

The invention discloses an echo wall mode microcavity laser and a preparation method thereof, and the laser sequentially comprises a GaN substrate, a field oxygen isolation layer, a hole transport layer, an insulating layer and a transparent conductive layer from bottom to top, and the upper surface of the GaN substrate is provided with an echo wall mode microcavity. The upper surface of the transparent conductive layer and the upper surface of the GaN substrate are respectively provided with a first electrode and a second electrode. The MIS structure of the first electrode and the transparent conducting layer-insulating layer-GaN substrate is adopted, the preparation process and the structure are simple, the hole transport layer can improve the minority carrier hole injection amount when the device works, and therefore the turn-on voltage of the device is remarkably reduced; and the laser device can also realize a lasing function.

A method for fixing an optical element on a substrate in an optical path of an optoelectronic component is specified, comprising the steps: - Providing the optical element having a first surface containing a first surface material and providing the substrate having a second surface containing a second surface material, wherein the first surface material and the second surface material are independently selected from transparent, oxide materials and transparent nitride materials, - applying an alkaline solution to the first surface and / or to the second surface, - Arranging the first surface on the second surface, wherein a connecting layer comprising an inorganic polymer network is formed between the first surface material and the second surface material. Furthermore, an optoelectronic component is specified. The optoelectronic component can be a light-emitting diode, for example, a µ-LED.

A laser device based on silicon photonics with in-cavity power monitor includes a gain chip, a reflector, and a photodiode. The gain chip is mounted on a silicon photonics substrate and is configured to emit light from an active region bounded between a frontend facet and a backend facet. The reflector is configured to reflect the light in a cavity formed between the reflector and the frontend facet through which a laser light is output. The photodiode is coupled to one or more waveguides in the cavity by a splitter disposed directly in an optical path between the reflector and a component positioned in the cavity. The photodiode is configured to measure power of light propagating through the cavity between the reflector and the component.

According to the laser chip capable of inhibiting in-plane amplified spontaneous emission, the first inclined edge and the second inclined edge are designed, opposite edges parallel to the first cleavage edge and the second cleavage edge respectively are damaged, a first parasitic cavity and a second parasitic cavity existing in a natural cleavage laser chip are eliminated, and the laser chip can inhibit in-plane amplified spontaneous emission. Therefore, the formation of in-plane amplified spontaneous emission of the laser chip is remarkably inhibited, meaningless consumption of carriers in a laser emission layer in the laser chip is prevented, the luminous efficiency of the laser chip on laser wavelength can be improved, the light-light conversion efficiency of the laser from pump light to emission laser is improved, and the output power of the laser is finally improved. And secondly, due to the suppression of amplified spontaneous radiation in a laser chip plane and the improvement of the light-light conversion efficiency of the laser, the power consumption of the laser can be obviously reduced under the condition of certain output power, the operation cost of the laser is reduced to a certain extent, and the cost performance of the laser is improved.

An FM LIDAR system is described that includes a frequency modulated LIDAR system that incorporates a laser source that is optically coupled to a whispering gallery mode optical resonator. Light from the laser that is coupled into the whispering gallery mode optical resonator is coupled back out as a returning counterpropagating wave having a frequency characteristic of a whispering gallery mode of the optical resonator. This returning wave is used to reduce the linewidth of the source laser by optical injection. Modulation of the optical properties of the whispering gallery mode optical resonator results in modulation of the frequency of the frequencies supported by whispering gallery modes of the resonator, and provides a method for producing highly linear and reproducible optical chirps that are highly suited for use in a LIDAR system. Methods of using such an FM LIDAR system and vehicle assisting systems that incorporate such FM LIDAR systems are also described.

A distributed feedback (DFB) laser apparatus has a distributed feedback (DFB) laser (650) comprising a DFB structure (511), a heater (508) arranged to heat the DFB structure to change a lasing frequency of the DFB laser and a heater circuitry hard-wiring configuration (556) hard-wired to route power to a selected portion (616) of the heater such that heating the selected portion (616) changes refractive index of the DFB structure (511) at a position along the DFB structure corresponding to the selected portion, thereby adjusting the lasing frequency.

A method for manufacturing a large number of radiation-emitting semiconductor chips is described, comprising the following steps: - Providing a semiconductor chip assembly (1) with an epitaxial semiconductor layer sequence (2) that has been epitaxially grown on a growth substrate (4), wherein the semiconductor chip assembly (1) has a plurality of chip regions (5) and wherein at least one structural trench (6) is arranged between two chip regions (5), - Inserting at least one additional trench (7) between two chip areas (5), - Introducing a slit (10) into the semiconductor chip assembly (1) which at least partially overlaps with the further trench (7) in top view, - Separating the semiconductor chip array (1) along the slit (10) into a plurality of radiation-emitting semiconductor chips, each radiation-emitting semiconductor chip comprising a chip area (5). Furthermore, a semiconductor chip assembly (1) is specified.

A multilayer quantum dot laser growth method based on a stress compensation technology comprises the following steps: S1, removing an oxide layer from an N-type substrate, and respectively growing an N-type GaAs buffer layer, an N-type AlvGa1-vAs limiting layer and a GaAs waveguide layer I; s2, growing an In < w > Ga < 1-w > As quantum well, an InAs quantum dot, an In < x > Ga < 1-x > As cover layer, a GaAs cover layer, a GaAs spacing layer I and the like on the GaAs waveguide layer I; s3, circulating S2 for a set number of times so as to realize the growth of the multi-layer quantum dot material; and S4, respectively growing a GaAs waveguide layer II, a P-type Al < z > Ga < 1-z > As limiting layer and a P-type GaAs metal contact layer on the GaAs spacing layer II. According to the invention, the GaAsP material with a small lattice constant is utilized, and the stress caused by the InGaAs material is reduced, so that the uniformity and quality of the multi-layer quantum dot laser structure are improved.

The utility model discloses a light outlet control device applied to a laser and the laser, and relates to the technical field of lasers. The device comprises a shell, a driving motor, a shading plate and a connecting arm. Wherein a containing space capable of containing the light shielding plate is arranged in the shell, the containing space is divided into a light shielding area and a working area, the light shielding plate can move between the working area and the light shielding area, and when the light shielding plate completely moves to the light shielding area, laser emitted by the laser can be prevented from being emitted from the light outlet. The two ends of the connecting arm are connected with the driving motor and the shading plate correspondingly, and the driving motor can drive the shading plate to reciprocate between the working area and the shading area through the connecting arm. Therefore, whether the light shielding plate moves to the light shielding area capable of shielding laser emission or not can be controlled by controlling operation of the motor, and whether the light shielding plate shields laser emission or not is remotely controlled through the motor under the condition that the laser continuously generates the laser.

The invention belongs to the field of lasers, and discloses a growth method for reducing laser Ith through N grating burying, which subversively adopts an N-type grating structure, uses a built-in P-N junction formed by the N-type grating structure and a subsequent P-type buried layer as a natural and efficient current blocking layer, and structurally eliminates a current leakage path. Afterwards, in the heating stage, trace arsine is introduced to carry out atomic-scale protection on the sensitive grating morphology, at the optimal mass transport temperature, the high mobility characteristic of indium atoms is utilized to carry out shape-preserving filling on grating grooves, flawless preliminary planarization is achieved, and through variable-temperature thickening growth and high-temperature annealing in the pure phosphorus atmosphere, the high-temperature-resistant grating is obtained. And performing quality optimization and defect repair on the buried layer and the key interface. The series of linked steps ensure that the indium phosphide buried layer with flat atomic scale and complete crystal lattice can grow on the fragile N-type grating, and ensure that a high-quality covering layer and an active region grow on the N-type grating.

An optoelectronic device (10) comprises a laser light-emitting component (100) and an optical component (200) with an optical waveguide (201). The laser light-emitting component (100) has a light-exit surface (120) for emitting the laser light and at least one first alignment structure (130) on a first end face (110). The optical component (200) has a light-entry surface (220) on a second end face (210) where the laser light can be coupled into the optical waveguide (201), and at least one second alignment structure (230).The first and second alignment structures (130, 230) are designed to be complementary to each other in order to align the laser light emitting component (100) to the optical component (200) in such a way that the light exit surface (120) and the light entry surface (220) are opposite each other, whereby the laser light is coupled into the optical waveguide (201) in the case of emission of laser light by the laser light emitting component (100).

The invention belongs to the technical field of semiconductor lasers, and particularly relates to a nondestructive semiconductor laser cavity surface preparation method. The method comprises the following steps: positioning the crystal orientation of a semiconductor wafer to obtain an easily dissociated surface of the semiconductor wafer; etching a dissociation guide groove parallel to the surface which is most easy to dissociate, and performing arc transition treatment on edges and corners of a ridge-shaped protection area of the dissociation guide groove in the etching process; the semiconductor wafer is naturally dissociated by using the dissociation guide groove through a scribing process and a splitting process, and a smooth semiconductor laser cavity surface is obtained. The invention provides two technical schemes of circular arc transition at the turning position of the dissociation guide groove, so that a smooth, flat, damage-free and high-quality semiconductor laser cavity surface can be obtained, and after the cavity surface film is plated, semiconductor materials such as gallium nitride can be prevented from reacting with gases such as water vapor and oxygen in the air; the service life of the semiconductor laser such as gallium nitride is prolonged, and the reliable and stable semiconductor laser can be obtained.