369results about "Semiconductor laser structural details" patented technology

A hybrid silicon photonic integrated circuit (48) for an FMCW LIDAR device (14), comprises a first SOI substrate (70) having a trench (80), a first optical waveguide (76) monolithically formed on or in the first SOI substrate (70) and abutting the trench (80), and a heterogeneously integrated laser chip (50) received upside down in the trench (80). A free-space coupler (36) is monolithically formed on or in the first SOI substrate (70), connected to the laser chip (50) via the first optical waveguide (76) and emits the light generated by the laser chip (50) into free space. A detector (32) is detects a superposition of reflected light, which was emitted by the free-space coupler (36) and reflected at an object (12) to which a range shall be measured, and reference light, which was not reflected at the object (12).

A GaN substrate includes a main surface 1 inclined by 0° to 10° from a (0001) crystal plane which is a Ga-polar plane, and including a Si-doped GaN layer on at least a surface of the main surface 1, in which the Si-doped GaN layer has a Si concentration of 1×1018 atoms / cm3 or more, and a total of bottom areas of recessed defects on a surface of the Si-doped GaN layer is 15% or less of an area of the entire surface of the Si-doped GaN layer.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

The invention provides a photoelectric chip common packaging piece, an optical communication module and a preparation method, the photoelectric chip common packaging piece comprises a carrier plate, an optical chip and an electric chip, one side of the carrier plate is provided with a mounting surface, the mounting surface is provided with an electric interconnection structure, the carrier plate is internally provided with a conductive through hole and an optical interconnection structure, and the conductive through hole is electrically connected with the electric interconnection structure; the optical chip and the electric chip are both arranged on the mounting surface of the carrier plate, the optical chip is electrically connected to the electric chip through an electric interconnection structure, one side, facing the mounting surface, of the optical chip comprises an optical device, and an optical signal emitted by the optical device penetrates through the carrier plate through the optical interconnection structure. Compared with the prior art, efficient conversion and transmission of optical signals and electric signals are achieved, the interconnection distance between chips is shortened to a large extent, signal transmission loss and delay are reduced, signal integrity is improved, and therefore reliable transmission of high-frequency signals is achieved.

An FM LIDAR system is described that includes a frequency modulated LIDAR system that incorporates a laser source that is optically coupled to a whispering gallery mode optical resonator. Light from the laser that is coupled into the whispering gallery mode optical resonator is coupled back out as a returning counterpropagating wave having a frequency characteristic of a whispering gallery mode of the optical resonator. This returning wave is used to reduce the linewidth of the source laser by optical injection. Modulation of the optical properties of the whispering gallery mode optical resonator results in modulation of the frequency of the frequencies supported by whispering gallery modes of the resonator, and provides a method for producing highly linear and reproducible optical chirps that are highly suited for use in a LIDAR system. Methods of using such an FM LIDAR system and vehicle assisting systems that incorporate such FM LIDAR systems are also described.

The invention belongs to the field of lasers, and discloses a growth method for reducing laser Ith through N grating burying, which subversively adopts an N-type grating structure, uses a built-in P-N junction formed by the N-type grating structure and a subsequent P-type buried layer as a natural and efficient current blocking layer, and structurally eliminates a current leakage path. Afterwards, in the heating stage, trace arsine is introduced to carry out atomic-scale protection on the sensitive grating morphology, at the optimal mass transport temperature, the high mobility characteristic of indium atoms is utilized to carry out shape-preserving filling on grating grooves, flawless preliminary planarization is achieved, and through variable-temperature thickening growth and high-temperature annealing in the pure phosphorus atmosphere, the high-temperature-resistant grating is obtained. And performing quality optimization and defect repair on the buried layer and the key interface. The series of linked steps ensure that the indium phosphide buried layer with flat atomic scale and complete crystal lattice can grow on the fragile N-type grating, and ensure that a high-quality covering layer and an active region grow on the N-type grating.

An optoelectronic device (10) comprises a laser light-emitting component (100) and an optical component (200) with an optical waveguide (201). The laser light-emitting component (100) has a light-exit surface (120) for emitting the laser light and at least one first alignment structure (130) on a first end face (110). The optical component (200) has a light-entry surface (220) on a second end face (210) where the laser light can be coupled into the optical waveguide (201), and at least one second alignment structure (230).The first and second alignment structures (130, 230) are designed to be complementary to each other in order to align the laser light emitting component (100) to the optical component (200) in such a way that the light exit surface (120) and the light entry surface (220) are opposite each other, whereby the laser light is coupled into the optical waveguide (201) in the case of emission of laser light by the laser light emitting component (100).

A vertical cavity surface emitting laser includes an oxide substrate having a first face and a second face at an opposite side from the first face; a semiconductor section disposed on the first face; a dielectric filter layer disposed between the semiconductor section and the first face and having a reflective spectrum configured to provide an optical window; a first DBR mirror; and a second DBR mirror disposed at a curved surface of the second face. The first DBR mirror, the semiconductor section, the dielectric filter layer, the oxide substrate, and the second DBR mirror are arranged in a first axial direction to form an extended cavity. The semiconductor section is disposed between the dielectric filter layer and the first DBR mirror, and includes a p-type III nitride region, an n-type III nitride region, and a III nitride active region between the p-type and n-type III nitride regions.

A first layer, a first spacer layer, and a second layer of a semiconductor wafer can be etched to produce a plurality of columnar structures extending from the substrate layer and including a first optical cavity situated about the first gain medium, a second optical cavity situated about the second gain medium, and a first spacer region contacting the first gain medium and the second gain medium. Also, a photonic microparticle formed from a layered semiconductor wafer and of a columnar structure having a first optical cavity situated about a first gain medium, a second optical cavity situated about a second gain medium, and a first spacer region contacting the first gain medium and the second gain medium. The first optical cavity and the second optical cavity in the photonic microparticle are each capable of generating laser light with a distinct spectral peak when energetically excited.

Example methods, compositions and structures are presented whereby sub-10-nm-thick strain-relieving Si1-xGex layers can be realized by Ge ion implantation, into, and selective oxidation of, Si(111) wafers. The resulting Ge-rich layers are fully strain relaxed via a network of misfit dislocations at the Si / Si1-xGe, interface, which do not propagate through the Si1-xGex film. The dislocation network has been found to coincide with a periodic variation in the composition at the Si / Si1-xGex interface and is believed to result from the defect-medicated diffusion of Si atoms from the Si substrate through the Si1-xGex layer to the above SiO2 layer. The epitaxial growth of GaAs on such ultra-thin substrates is demonstrated, presenting a promising approach for solving the long-standing challenge of local, monolithic integration of III-V optoelectronics on the Si platform.

A method for manufacturing a laser element includes: a step of preparing a semiconductor substrate (10) having a base substrate (BK), a first growth-inhibiting part (5F) and a second growth-inhibiting part (5S) adjacent to each other across an opening (K), and a first semiconductor part (S1) having a longitudinal shape located above the first growth-inhibiting part (5F) and the second growth-inhibiting part (5S) from the opening (K); a step of forming over the first semiconductor part (S1) a second semiconductor part (S2) including ridges (RJ) located above the first growth-inhibiting part (5F); and a step of scribing a portion of a first laminate (LB1), which includes the first semiconductor part (S1) and the second semiconductor part (S2), on the side where the ridges (RJ) are located.

The invention discloses a silicon-based indium phosphide laser and a preparation method thereof, and relates to the technical field of semiconductor devices, the silicon-based indium phosphide laser comprises a silicon substrate, a composite insulating layer, a Van der Waals buffer layer and an indium phosphide epitaxial structure which are stacked in sequence; the indium phosphide epitaxial structure comprises a first epitaxial structure stacked on the Van der Waals buffer layer and a second epitaxial structure stacked on the first epitaxial structure; the first epitaxial structure at least comprises a lower cladding layer, a lower limiting layer, a lower waveguide layer, a spacing layer, a multi-quantum well active region, an upper limiting layer, an etching stop layer, an upper waveguide layer and an upper cladding layer which are sequentially stacked, a Bragg grating is manufactured in the upper waveguide layer, and the second epitaxial structure comprises a regrowth cladding layer and a contact layer which are sequentially stacked; the Van der Waals buffer layer is a two-dimensional material film, and the problems of lattice mismatch, thermal expansion coefficient mismatch and polarity structure difference of integration of the silicon substrate and the InP epitaxial layer are thoroughly solved from a physical mechanism by introducing the single-layer two-dimensional material Van der Waals buffer layer.

The application provides a laser chip with improved reliability and a preparation process thereof, and aims to solve the technical problem that an edge-emitting laser is prone to end face failure.The laser chip comprises a substrate, the back surface of the substrate is provided with an N electrode, the front surface of the substrate is provided with an epitaxial material, the top layer of the epitaxial material is an ohmic contact layer, the epitaxial material is provided with a waveguide, and the vicinity of the waveguide is a waveguide region; an insulating medium layer is arranged on the surface of the epitaxial material, the waveguide region and the insulating medium layer are provided with a P electrode, but the ohmic contact layer in the waveguide region is not provided with the insulating medium layer, and the P electrode is in contact with the ohmic contact layer; the end surface of the laser chip is provided with an electrode-free area, and the electrode-free area is not provided with the insulating medium layer and the P electrode above the electrode-free area.The application further comprises a preparation method of the laser chip.The electrode-free area is arranged on the end surface of the laser, and the electrode-free area can improve the COD threshold level and improve the reliability.

The utility model relates to a rectangular optical system and a rectangular laser transmitter. The rectangular optical system comprises a laser source used for emitting laser; the laser collimation piece is arranged at the laser emitting end of the laser source so as to focus the laser into collimated laser, and the laser collimation piece at least comprises a first plano-convex lens and a second plano-convex lens which are sequentially arranged on a laser path; and the rectangular array mirror is arranged at the laser emitting end of the laser collimation piece so as to emit the incident collimation laser into a rectangular light spot. According to the utility model, laser is collimated and emitted into rectangular light spots, light focusing and overall uniform emission are realized, the accuracy and the stability of laser irradiation are improved, and the device is suitable for multiple fields of medical treatment, manufacturing and the like, and has relatively high practicability and economical efficiency.

A dry etching method for indium-containing III-V compound semiconductor materials, relating to the field of semiconductor laser processing technology, solves the problem of volatile InCl during etching of indium-containing compound semiconductor laser materials in existing technologies. x Deposition leads to decreased etching rates, cavity contamination, and high-temperature assisted etching causes mask loss, morphology degradation, and process instability. This invention addresses these issues by setting a cycle program that alternates between etching and rinsing pulses. During the etching stage, H2 is introduced to suppress the formation of non-volatile InCl3 products and simultaneously convert InCl3 products into InCl2, effectively inhibiting byproduct formation and improving etching efficiency. During the physical rinsing stage, Ar is used to effectively remove non-volatile InCl3 adhering to the surface of the etched material. x The product exposes the semiconductor substrate, promoting chemical pulses to carry out chemical reactions to etch the substrate, effectively preventing cavity contamination and a decrease in etching uniformity, and significantly improving the controllability and repeatability of the etching morphology.

The invention relates to the technical field of semiconductor lasers, in particular to a high-speed communication vertical-cavity surface-emitting laser and a preparation method thereof.The high-speed communication vertical-cavity surface-emitting laser comprises a substrate, an epitaxial structure is arranged on the substrate and comprises an active area, a transition DBR layer is arranged on the active area, and a tunnel junction is arranged in the center of the transition DBR layer; the tunnel junction comprises a P-type high-concentration C doping layer and an N-type high-concentration Te doping layer, and a top DBR layer is arranged on the transition DBR layer. The tunnel junction is used for replacing an oxide layer of a traditional oxidizing VCSEL and is used for providing current limitation and optical limitation. According to a traditional oxide layer, the oxidation depth is controlled by oxidizing Al0. 98Ga0. 02As to achieve current and optical limitation of the oxidation caliber, Al interface oxidation can be avoided by replacing the traditional oxide layer with a tunnel junction structure, and the problem of further growth of defects can be prevented. An oxide layer is replaced by a tunnel junction limiting structure, higher emission uniformity and higher repeatability manufacturing can be achieved, the size of an oxidation aperture can be accurately defined, and the stability of a mode can be controlled.

To provide a quantum cascade laser capable of simplifying a structure and improving a strength.SOLUTION: A quantum cascade laser 1 includes: a semiconductor substrate 2 having a first surface 2a and a second surface 2b; a semiconductor stacked body 3 that includes an active layer 31 having a cascade structure and is formed on the first surface 2a of the semiconductor substrate 2; a first electrode 4 formed on a surface 3b of the semiconductor stacked body 3; and a second electrode 5 formed on the second surface 2b of the semiconductor substrate 2. The semiconductor substrate 2 is an InP substrate with a carrier density of 1×1017 cm-3 or less. A concave portion 21 that passes through the semiconductor substrate 2 and reaches the semiconductor stacked body 3 is formed in the second surface 2b of the semiconductor substrate 2. The second electrode 5 is continuously formed on the second surface 2b of the semiconductor substrate 2, on side surfaces 22 of the concave portion 21, and on an exposed surface 3a of the semiconductor stacked body 3 which is exposed from the semiconductor substrate 2 at a bottom 21a of the concave portion 21.SELECTED DRAWING: Figure 2

A laser source may include a laser diode, a modulation device, and a feedback device. The modulation device may include an electric power source and may be suitable for modifying a current intensity applied to the laser diode, which may modify an emission frequency of the laser diode. The feedback device may be suitable for modifying a current intensity applied to the laser diode by the electric power source as a function of the electromagnetic radiation emitted by the laser diode.

The present application relates to an optical chip structure and a manufacturing method therefor. The method comprises: providing a base and a semi-finished chip, wherein the base comprises a first substrate, an isolation dielectric layer formed on the first substrate, a first semiconductor optical device, and a first waveguide, the semi-finished chip comprises a second substrate and a semi-finished thin-film layer located on one side of the second substrate, the semi-finished thin-film layer and the first waveguide are made of different materials, the first substrate comprises a silicon substrate; forming a recess in the isolation dielectric layer, wherein the first waveguide is at least partially located between the recess and the first substrate; bonding the semi-finished chip in the recess by means of the semi-finished thin-film layer, so that the semi-finished thin-film layer is optically coupled to the first waveguide; removing the second substrate of the semi-finished chip to form a second semiconductor optical device; and carrying out metallization to form an electrode structure separately connected to the first semiconductor optical device and the second semiconductor optical device.

The application discloses a laser light source packaging method based on silicon nitride ceramics and relates to the technical field of laser light source packaging.The laser light source packaging method is composed of silicon nitride ceramics, a laser chip, silver powder resin glue, aluminum oxide, epoxy resin and N-methyl pyrrolidone raw materials.The light source packaging steps are as follows: firstly, the position of the center point of the laser in the laser cavity of the silicon nitride ceramics is measured by using a screw micrometer; the laser light source packaging method based on silicon nitride ceramics measures the position of the center point of the silicon nitride ceramic circuit plate by using a screw micrometer, marks the position by using silver powder resin glue, and stabilizes the light spot line by using laser light source projection technology, so that the laser pad plate of the silicon nitride ceramics is aligned and packaged with the envelope frame, the laser light cannot be offset, the quality of the laser light source packaging based on silicon nitride ceramics is high, the packaging effect is good, cost is saved, and the market use is widened.

A semiconductor optical amplifier having a III-V semiconductor structure above a silicon structure. The III-V semiconductor structure forms a p-i-n junction with a first portion having a first width and a second portion having a wider second width. The silicon structure includes a silicon waveguide optically coupled to the III-V semiconductor structure and having a central silicon rib extending between two wide trenches. The central silicon rib includes a first tapered portion located under the first portion of the III-V semiconductor structure, the first tapered portion decreasing in width as the first tapered portion extends in a longitudinal direction, and a second tapered portion located under the second portion of the III-V semiconductor structure, the second tapered portion increasing in width as the second tapered portion extends in the longitudinal direction.

This invention relates to a packaging method for GaAs-based high-power laser chips to improve heat dissipation efficiency. The method includes the following steps: adhering a graphene film to the p-side of the GaAs-based high-power laser chip, and then using a graphene-In52Sn48 alloy hybrid solder to package it onto a base heat sink via low-temperature soldering. This invention, by covering the p-side of the chip with a graphene film and then soldering it to the base heat sink with the graphene-In52Sn48 alloy hybrid solder, increases the contact area between the chip and the heat sink. The high thermal conductivity of graphene allows for rapid transfer of waste heat generated in the active region to the heat sink, reducing the thermal gradient of the chip and significantly enhancing the heat dissipation effect of the packaged module. Compared to traditional methods, the reliability, stability, and heat dissipation effect of GaAs-based high-power lasers packaged using this method are significantly improved, while also extending the laser's lifespan.

The invention relates to a photonic chip (10) having a heterogeneous III-V semiconductor structure on a second semiconductor comprising, in a stacking direction (Δ): a waveguide (11) made of a first III-V semiconductor material, referred to as the lll-V waveguide, comprising a first confinement layer (110), an active layer (111) and a second confinement layer (112), a waveguide (12) made of a second semiconductor material, referred to as the SC waveguide, comprising a layer (120) of the second semiconductor material. The first confinement layer (110) comprising a first portion (110a) on top of the active layer (111) and at least one extension (110b) extending laterally beyond the active layer (111), the extension (110b) having a thickness (Eb) in the stacking direction that is greater than that (Ea) of the first portion (110a) so as to define an electrical contact face (116) located before the first portion (110a) in the stacking direction (Δ).

The present invention provides a laser, a wafer and a laser chip. The laser includes: a laser chip and a heat sink. The laser chip includes a main chip area, a first cleavage area and a second cleavage area. The first cleavage area is adjacent to the main chip area, and the first cleavage area has a light-emitting end face for emitting light. The second cleavage area is adjacent to an end of the main chip area away from the first cleavage area. The first cleavage area has a first cleavage length, and the second cleavage area has a second cleavage length. The heat sink is bonded to the main chip area and the second cleavage area. The first cleavage length is smaller than the second cleavage length, and the heat sink is spaced apart from the first cleavage area. The laser of the present invention solves the technical problem of poor heat dissipation of the laser.

The invention relates to the technical field of semiconductor materials, and discloses an III-V wafer, a preparation method of the III-V wafer, an on-chip light source and a preparation method of the on-chip light source. The III-V wafer comprises a substrate (1), an epitaxial layer (2) and a strain superlattice layer (3), wherein the epitaxial layer (2) and the strain superlattice layer (3) are sequentially arranged on the substrate (1). Wherein the strained superlattice layer (3) comprises a strained superlattice layer I (31) and a strained superlattice layer II (32), the strained superlattice layer II (32) is in contact with the epitaxial layer (2), and the lattice constant of the material of the strained superlattice layer I (31) is smaller than that of the material of the strained superlattice layer II (32). According to the III-V wafer provided by the invention, the strain superlattice layers with different lattice constants are arranged on the epitaxial layer, so that interface defects can be eliminated, the luminous efficiency of an on-chip light source is improved, the service time of the on-chip light source is prolonged, and the reliability is enhanced.

A semiconductor laser element includes: a semiconductor substrate; a semiconductor laminate; a first electrode in which a ridge portion of the semiconductor laminate is embedded; and a second electrode. A first region of a side surface of the first electrode is separated from a first end surface in such a manner to extend away from the first end surface as the first region extends away from the ridge portion to both sides. A shortest distance between a first side surface and the first region is smaller than each of a shortest distance between a third side surface and a third region and a shortest distance between a fourth side surface and a fourth region. The first region does not include a corner in a range satisfying D1≤S1 and D1≤S2.

The invention relates to a method of manufacturing an optically-pumped or electrically-pumped device (1) with feedback structure comprising the steps of: - providing a substrate (10); - providing at least one optical confinement layer (12) on top of the substrate and comprising one or more integrated optical structures (120); - forming a colloidal dispersion comprising bulk semiconductor nanocrystals and / or bulk hetero nanocrystals,, with bulk semiconductor nanocrystals being defined as semiconductor nanocrystals having linear optical properties as determined by the corresponding material composition; - providing the colloidal dispersion, thereby forming a semiconductor film (11) and forming the device (1). The invention further relates to an optically-pumped or electrically-pumped device (1) with feedback structure comprising a substrate (10), at least one optical confinement layer (12), and at least one semiconductor film (11).

The invention relates to the technical field of photoelectric elements, and discloses a laser element with a two-dimensional Moire superlattice layer. Comprising a substrate layer, an n-type coating layer, the two-dimensional Moire superlattice layer, a lower waveguide layer, a quantum well active region, an electron blocking layer, an upper waveguide layer, a p-type coating layer and a p-type contact layer from bottom to top in sequence. The two-dimensional Moire superlattice layer is introduced between the n-type coating layer and the lower waveguide layer, the limiting effect of current carriers can be effectively improved, leakage current is reduced, meanwhile, the superlattice layer has a unique energy band structure, light field distribution of a device is optimized, in addition, by optimizing the structural design and the doping process of the p-type region, the light field distribution of the device is optimized, and the light field distribution of the device is optimized. And the electrical performance of the device can be obviously improved.