187results about "Semiconductor laser structural details" patented technology

The invention belongs to the field of lasers, and discloses a growth method for reducing laser Ith through N grating burying, which subversively adopts an N-type grating structure, uses a built-in P-N junction formed by the N-type grating structure and a subsequent P-type buried layer as a natural and efficient current blocking layer, and structurally eliminates a current leakage path. Afterwards, in the heating stage, trace arsine is introduced to carry out atomic-scale protection on the sensitive grating morphology, at the optimal mass transport temperature, the high mobility characteristic of indium atoms is utilized to carry out shape-preserving filling on grating grooves, flawless preliminary planarization is achieved, and through variable-temperature thickening growth and high-temperature annealing in the pure phosphorus atmosphere, the high-temperature-resistant grating is obtained. And performing quality optimization and defect repair on the buried layer and the key interface. The series of linked steps ensure that the indium phosphide buried layer with flat atomic scale and complete crystal lattice can grow on the fragile N-type grating, and ensure that a high-quality covering layer and an active region grow on the N-type grating.

The invention discloses a silicon-based indium phosphide laser and a preparation method thereof, and relates to the technical field of semiconductor devices, the silicon-based indium phosphide laser comprises a silicon substrate, a composite insulating layer, a Van der Waals buffer layer and an indium phosphide epitaxial structure which are stacked in sequence; the indium phosphide epitaxial structure comprises a first epitaxial structure stacked on the Van der Waals buffer layer and a second epitaxial structure stacked on the first epitaxial structure; the first epitaxial structure at least comprises a lower cladding layer, a lower limiting layer, a lower waveguide layer, a spacing layer, a multi-quantum well active region, an upper limiting layer, an etching stop layer, an upper waveguide layer and an upper cladding layer which are sequentially stacked, a Bragg grating is manufactured in the upper waveguide layer, and the second epitaxial structure comprises a regrowth cladding layer and a contact layer which are sequentially stacked; the Van der Waals buffer layer is a two-dimensional material film, and the problems of lattice mismatch, thermal expansion coefficient mismatch and polarity structure difference of integration of the silicon substrate and the InP epitaxial layer are thoroughly solved from a physical mechanism by introducing the single-layer two-dimensional material Van der Waals buffer layer.

The application provides a laser chip with improved reliability and a preparation process thereof, and aims to solve the technical problem that an edge-emitting laser is prone to end face failure.The laser chip comprises a substrate, the back surface of the substrate is provided with an N electrode, the front surface of the substrate is provided with an epitaxial material, the top layer of the epitaxial material is an ohmic contact layer, the epitaxial material is provided with a waveguide, and the vicinity of the waveguide is a waveguide region; an insulating medium layer is arranged on the surface of the epitaxial material, the waveguide region and the insulating medium layer are provided with a P electrode, but the ohmic contact layer in the waveguide region is not provided with the insulating medium layer, and the P electrode is in contact with the ohmic contact layer; the end surface of the laser chip is provided with an electrode-free area, and the electrode-free area is not provided with the insulating medium layer and the P electrode above the electrode-free area.The application further comprises a preparation method of the laser chip.The electrode-free area is arranged on the end surface of the laser, and the electrode-free area can improve the COD threshold level and improve the reliability.

A dry etching method for indium-containing III-V compound semiconductor materials, relating to the field of semiconductor laser processing technology, solves the problem of volatile InCl during etching of indium-containing compound semiconductor laser materials in existing technologies. x Deposition leads to decreased etching rates, cavity contamination, and high-temperature assisted etching causes mask loss, morphology degradation, and process instability. This invention addresses these issues by setting a cycle program that alternates between etching and rinsing pulses. During the etching stage, H2 is introduced to suppress the formation of non-volatile InCl3 products and simultaneously convert InCl3 products into InCl2, effectively inhibiting byproduct formation and improving etching efficiency. During the physical rinsing stage, Ar is used to effectively remove non-volatile InCl3 adhering to the surface of the etched material. x The product exposes the semiconductor substrate, promoting chemical pulses to carry out chemical reactions to etch the substrate, effectively preventing cavity contamination and a decrease in etching uniformity, and significantly improving the controllability and repeatability of the etching morphology.

The present application relates to an optical chip structure and a manufacturing method therefor. The method comprises: providing a base and a semi-finished chip, wherein the base comprises a first substrate, an isolation dielectric layer formed on the first substrate, a first semiconductor optical device, and a first waveguide, the semi-finished chip comprises a second substrate and a semi-finished thin-film layer located on one side of the second substrate, the semi-finished thin-film layer and the first waveguide are made of different materials, the first substrate comprises a silicon substrate; forming a recess in the isolation dielectric layer, wherein the first waveguide is at least partially located between the recess and the first substrate; bonding the semi-finished chip in the recess by means of the semi-finished thin-film layer, so that the semi-finished thin-film layer is optically coupled to the first waveguide; removing the second substrate of the semi-finished chip to form a second semiconductor optical device; and carrying out metallization to form an electrode structure separately connected to the first semiconductor optical device and the second semiconductor optical device.

The application discloses a laser light source packaging method based on silicon nitride ceramics and relates to the technical field of laser light source packaging.The laser light source packaging method is composed of silicon nitride ceramics, a laser chip, silver powder resin glue, aluminum oxide, epoxy resin and N-methyl pyrrolidone raw materials.The light source packaging steps are as follows: firstly, the position of the center point of the laser in the laser cavity of the silicon nitride ceramics is measured by using a screw micrometer; the laser light source packaging method based on silicon nitride ceramics measures the position of the center point of the silicon nitride ceramic circuit plate by using a screw micrometer, marks the position by using silver powder resin glue, and stabilizes the light spot line by using laser light source projection technology, so that the laser pad plate of the silicon nitride ceramics is aligned and packaged with the envelope frame, the laser light cannot be offset, the quality of the laser light source packaging based on silicon nitride ceramics is high, the packaging effect is good, cost is saved, and the market use is widened.

This invention relates to a packaging method for GaAs-based high-power laser chips to improve heat dissipation efficiency. The method includes the following steps: adhering a graphene film to the p-side of the GaAs-based high-power laser chip, and then using a graphene-In52Sn48 alloy hybrid solder to package it onto a base heat sink via low-temperature soldering. This invention, by covering the p-side of the chip with a graphene film and then soldering it to the base heat sink with the graphene-In52Sn48 alloy hybrid solder, increases the contact area between the chip and the heat sink. The high thermal conductivity of graphene allows for rapid transfer of waste heat generated in the active region to the heat sink, reducing the thermal gradient of the chip and significantly enhancing the heat dissipation effect of the packaged module. Compared to traditional methods, the reliability, stability, and heat dissipation effect of GaAs-based high-power lasers packaged using this method are significantly improved, while also extending the laser's lifespan.

The invention relates to a photonic chip (10) having a heterogeneous III-V semiconductor structure on a second semiconductor comprising, in a stacking direction (Δ): a waveguide (11) made of a first III-V semiconductor material, referred to as the lll-V waveguide, comprising a first confinement layer (110), an active layer (111) and a second confinement layer (112), a waveguide (12) made of a second semiconductor material, referred to as the SC waveguide, comprising a layer (120) of the second semiconductor material. The first confinement layer (110) comprising a first portion (110a) on top of the active layer (111) and at least one extension (110b) extending laterally beyond the active layer (111), the extension (110b) having a thickness (Eb) in the stacking direction that is greater than that (Ea) of the first portion (110a) so as to define an electrical contact face (116) located before the first portion (110a) in the stacking direction (Δ).

The invention relates to the technical field of semiconductor devices, in particular to a wafer and a preparation process thereof, and a laser device and a preparation process thereof, the wafer comprises a P-surface electrode, a substrate, a metal reflective layer, an epitaxial layer and an N-surface electrode which are stacked; a CuSiC alloy base plate is adopted as the substrate; and the epitaxial layer is an AlGaInP epitaxial layer after the original substrate is removed, and is bonded on the metal reflective layer. According to the technical scheme provided by the invention, the substrate adopts the CuSiC alloy substrate and is provided with the metal reflective layer, so that the LED lamp has the advantages of high luminous efficiency, high percent of pass and low manufacturing cost.

Silicon photonic crystal (10; 10'; 10") comprising periodic silicon structures (12) contiguous with voids (14), and a silicon resonant cavity (16) consisting of silicon nanowires (18) entirely made of silicon with uniform doping, said nanowires acting as active medium of the photonic crystal.

The invention provides a 60KW high-power single-mode semiconductor laser. The 60KW high-power single-mode semiconductor laser comprises an N aluminum electrode shell, a GaN substrate is arranged at the bottom of the inner side wall of the N aluminum electrode shell, an n-ALGaN layer is arranged on the upper surface of the GaN substrate, a first GaN layer is arranged on the upper surface of the n-ALGaN layer, an INGANactive layer is arranged on the upper surface of the first GaN layer, and a second GaN layer is arranged on the upper surface of the INGANactive layer. The GaN substrate and the SiN layer are used as the substrate of the laser to improve the light transition probability, then the n-ALGaN layer and the p-ALGaN layer are used as the epitaxial layers of the laser to improve the voltage resistance of the laser, and then the first GaN layer, the INGANactive layer and the second GaN layer are used to improve the limiting capability of the laser to holes and electrons, so that the performance of the laser is improved. The light wave generated by compounding can be effectively limited, the radiation efficiency is greatly improved, better ohmic contact can be formed between the p-GaN layer and the P aluminum electrode, the ohmic contact resistance and the power consumption of the laser are reduced, and the photoelectric conversion rate of the laser can reach 80%.

The application discloses a fixed semiconductor wafer cleaving device, which has a scribing device and a splitting device, and the two parts have fixing mechanisms and processing mechanisms respectively and can move along guide rails. A wafer mounting mechanism is arranged in the middle of the cleaving device, a wafer is fixed on the wafer mounting mechanism through a wafer ring, vacuum adsorption is carried out by a scribing fixing mechanism, and a scribing processing mechanism is used for scribing the wafer at a specified position. A splitting fixing mechanism supports the wafer at the lower part of the wafer mounting mechanism, a ceramic knife of a splitting processing mechanism is pressed against the back of a scribe mark of the wafer, the wafer is cleaved and fractured along the scribe mark, and thus the automatic processing of the fixed wafer is realized.

In at least one embodiment, the method is used to produce semiconductor lasers (1) and comprises the steps: - providing a plurality of laser emitters (2), at least one facet (22) of each of the laser emitters (2) being exposed, - electrically or optically pumping the laser emitters (2) such that the laser emitters (2) emit laser radiation (L), - generating a coating (3) on the facets (22), a local layer thickness (t) of the coating (3) over the facets (22) being determined by a local intensity of the laser radiation (L).

A surface emitter (100) and a method (300, 400) for manufacturing a surface emitter (100) are disclosed wherein, in one embodiment, the surface emitter (100) comprises: a substrate (108); a first mirror structure (104) and a second mirror structure (106) disposed over the substrate (108); a light emitting structure (102) arranged between the first mirror structure (104) and the second mirror structure (106), where the light emitting structure (102) is configured to emit light, and where the first mirror structure (104) and the second mirror structure (106) are configured to reflect light emitted from the light emitting structure (102); and a grating structure (110) comprising a plurality of periodically arranged grating elements (112) embedded in the substrate (108) wherein the grating structure (110) is configured for polarization stabilization of the emitted light.

The semiconductor laser element includes an element body that emits laser light from a first end surface. The element body includes: a first recessed portion provided between the first side surface and the element surface, the first recessed portion being recessed toward an interior of the element body; and a second recessed portion provided between the second side surface and the element surface, the second recessed portion being recessed toward an interior of the element body. The first concave part comprises a first inner side face facing the same side with the first side face and a first connecting face connected with the first inner side face and the first side face. The second concave part comprises a second inner side face facing the same side with the second side face and a second connecting face connected with the second inner side face and the second side face. The first connection surface and the second connection surface each include an inclined surface inclined at an angle different from the first side surface and the second side surface with respect to the element surface.

The invention discloses a semiconductor laser with a spherical-crown-shaped substrate bottom surface and a spherical-crown-shaped bottom surface processing method, and belongs to the technical field of semiconductor lasers. In a device packaging process in the prior art, residual bubbles and holes in a channel on the bottom surface of a substrate cannot be thoroughly eliminated. The semiconductor laser with the spherical-crown-shaped bottom surface of the substrate is provided with a radiating linear channel, and the bottom surface of the substrate is a spherical-crown-shaped bottom surface. Corroding the bottom of the substrate by adopting a wet etching method to obtain a spherical crown-shaped bottom surface, clamping the epitaxial wafer and a corrosive liquid with one side of the substrate facing downwards by a mechanical arm, controlling the mechanical arm to move the epitaxial wafer downwards at a constant speed in a certain speed range of 4.5-5.5 mm / s, immersing the bottom of the substrate into the corrosive liquid and staying for 25-35 seconds, the mechanical arm is controlled to move the epitaxial wafer upwards at a constant speed which is the same as the downward moving speed, and the bottom of the substrate is separated from the corrosive liquid and stays for 4.5-5.5 s; the process is repeated for 35-25 times, the corrosion depth of the bottom of the substrate of each tube core is gradually increased from the center of the bottom of the substrate of the tube core to the periphery, and the bottom surface of the substrate is in a spherical crown shape.

The invention relates to an optoelectronic device comprising an optoelectronic component structure with at least one optoelectronic component, and comprising an electronic semiconductor chip for electrically controlling the optoelectronic component structure. The electronic semiconductor chip has an integrated network adapter for establishing an Internet connection. When the Internet connection is established, the electronic semiconductor chip is designed to carry out data communication with an Internet server with respect to operation of the optoelectronic component structure. The invention also relates to a method for operating an optoelectronic device.

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

Provided is an optical semiconductor device capable of reducing inductance. An optical semiconductor device (1) according to one embodiment includes a support member (10) having a first pattern (11) for signal transmission and a second pattern (12) having a reference potential that forms a coplanar line with the first pattern (11) on a surface; a modulator (21) having a first electrode (23) provided on a back surface (21c) and connected to the second pattern (12) of the support member (10), and a second electrode (24) provided on a surface (21b) and connected to the first pattern (11) of the support member (10); and a first connection portion (30) having one end connected to the second pattern (12) of the support member (10) and the other end connected to the first electrode (23) of the modulator (21), the surface (21b) of the modulator (21) and the surface (10b) of the support member (10) facing each other.

The application belongs to the technical field of semiconductor lasers, and particularly relates to a non-damage semiconductor laser cavity surface preparation method. The method comprises the following steps: positioning a crystal direction of a semiconductor wafer to obtain a most easily dissociated surface of the semiconductor wafer; etching a dissociation guide groove parallel to the most easily dissociated surface, and performing a circular arc transition treatment on the corners of a ridge-shaped protection area of the dissociation guide groove during the etching process; and using the dissociation guide groove to make the semiconductor wafer naturally dissociate through a scribing process and a breaking process to obtain a smooth semiconductor laser cavity surface. The application provides two technical solutions of circular arc transitions at turning points of the dissociation guide groove, can obtain a smooth, flat, non-damage and high-quality semiconductor laser cavity surface, can avoid a reaction between gallium nitride and other semiconductor materials and water vapor, oxygen and other gases in the air after the cavity surface film is plated, improves the service life of the gallium nitride and other semiconductor lasers, and can obtain a reliable and stable semiconductor laser.

The application discloses an integration method of a lithium niobate-indium phosphide photoelectric integrated device based on a diamond substrate, which directly bonds a polycrystalline diamond substrate with the integrated chip, effectively improves the heat dissipation effect without affecting the original device performance, and solves the heat mismatch problem of lithium niobate, indium phosphide and other materials in the hetero-integration, and the whole preparation process is completed under low-temperature conditions, a heat mismatch balance temporary adhesive layer is introduced, and a low-temperature and long-time annealing treatment is combined, so that the bonding strength is improved, the interface thermal resistance is reduced, and the damage of the thin film material caused by the heat mismatch is reduced or eliminated; the method does not introduce more processes or complex designs except the bonding process, helps to ensure the process consistency, and realizes the transfer of the multi-layer hetero-wafer material and the prepared device layer.

A manufacturing method of a large-scale integrated laser ignition nuclear fusion device is characterized in that a recording machine technology is used for manufacturing equipment capable of rapidly punching holes with different angles in a large scale, the equipment is used for punching a large number of holes capable of pointing photon beams emitted by placed lasers to the same point, and the number of the holes is determined according to ignition nuclear fusion reaction requirements; the hole diameter is determined by equipment precision and ignition nuclear fusion needs.

The embodiment of the invention discloses a laser chip cleavage method and a laser chip, and the laser chip cleavage method comprises the steps: forming a first cleavage channel on a first surface of a wafer, forming a second cleavage channel on a second surface, and then applying stress to the second cleavage channel, so that the wafer is cleavage into a plurality of laser chips. In combination with the structure that the width of the second cleavage channel is gradually reduced along the height direction of the wafer and the outer edge contour of the cross section of the second cleavage channel in the direction from the second surface to the first surface, the width of the tip of the second cleavage channel is very small, a groove tip shape is formed, and under the condition that the second cleavage channel is stressed, the width of the second cleavage channel is reduced. And the crack always tends to expand towards a path with the highest energy and the lowest resistance, so that the path of the crack is convenient to control, the randomness of crack expansion is further reduced, the cavity surface perpendicularity of the chip can be improved, the roughness of a cleavage surface can be reduced, and the utilization rate of a wafer can be improved.

A laser is provided, which includes a frame, a substrate, heat sinks, light-emitting chips, and protective devices. The frame and the heat sinks are fixed to the substrate. The heat sinks, the light-emitting chips, and the protective devices are located inside the frame. The light-emitting chips and the protective devices are fixed to the heat sinks, and the light-emitting chip and the corresponding protective device have a spacing therebetween in a length direction of the heat sink.

The present invention concerns an optoelectronic device D such as a Semiconductor optical amplifier (SOA) working in a continuous wave condition and able to amplify high frequencies optical signals. The optoelectronic device D comprise an active zone I (such as SOA) with a slab (3) in a direct bias working in a continuous wave and a taper zone (II) connected to the active zone (I).

The invention relates to a method for producing an electronic component. The method comprises: forming a first semiconductor layer on or over a substrate, having a second semiconductor layer laterally adjacent to a dielectric structure using a lateral epitaxial overgrowth process such that the first semiconductor layer laterally overgrowths the dielectric structure from the second semiconductor layer; wherein the first semiconductor layer and the second semiconductor layer include or are formed from a semiconductor material; forming a third semiconductor layer on or over the first semiconductor layer such that the first semiconductor layer and the third semiconductor layer have a common interface, wherein the third semiconductor layer is configured to have a light-generating layer structure of the vertical surface emitter; and removing the substrate and removing at least part of the first semiconductor layer.