657results about "Semiconductor laser structural details" patented technology

Electro-absorption modulators (EAM) and monolithically integrated electro-absorption modulated lasers (EML) and methods of fabrication are disclosed. Vertically stacked waveguides for a distributed feedback (DFB) laser, an electro-absorption modulator (EAM) and a passive output waveguide are vertically integrated, and the DFB laser, EAM and output waveguide are optically coupled using laterally tapered vertical optical couplers. Laterally tapered vertical optical couplers provides an alternative to conventional butt-coupling of a laser and EAM, offering improved reliability for high power operation over extended lifetimes. Optionally, the EML comprises monolithically integrated electronic circuitry, e.g., driver and control electronics for the DFB laser and EAM. Beneficially, integrated EAM driver and control circuitry comprises a high-speed electro-optical control loop for very high-speed linearization and temperature compensation, e.g. to enable advanced modulation schemes, such as PAM-4 and DP-QPSK, for analog optical data center interconnect applications. Some embodiments are compatible with fabrication using a single epitaxial growth.

To reduce the wiring inductance when establishing electrical connection between a semiconductor laser and a laser driver in a semiconductor laser driving apparatus. A semiconductor laser driving apparatus includes a substrate, a laser driver, and a semiconductor laser. The substrate incorporates the laser driver. The semiconductor laser is mounted on one surface of the substrate. Connection wiring electrically connects the laser driver and the semiconductor laser to each other with a wiring inductance of 0.5 nanohenries or less. A shield suppresses flow of electromagnetic waves to / from an outside of the semiconductor laser driving apparatus for at least one of the semiconductor laser and the laser driver.

A hybrid silicon photonic integrated circuit (48) for an FMCW LIDAR device (14), comprises a first SOI substrate (70) having a trench (80), a first optical waveguide (76) monolithically formed on or in the first SOI substrate (70) and abutting the trench (80), and a heterogeneously integrated laser chip (50) received upside down in the trench (80). A free-space coupler (36) is monolithically formed on or in the first SOI substrate (70), connected to the laser chip (50) via the first optical waveguide (76) and emits the light generated by the laser chip (50) into free space. A detector (32) is detects a superposition of reflected light, which was emitted by the free-space coupler (36) and reflected at an object (12) to which a range shall be measured, and reference light, which was not reflected at the object (12).

The invention discloses a high-power semiconductor laser array which is formed by sequentially and alternately placing and welding n semiconductor laser chips and n + 1 tungsten copper heat sinks, the width of each tungsten copper heat sink is larger than that of each semiconductor laser chip, and the upper surface and the lower surface of each semiconductor laser chip are wrapped by the tungsten copper heat sinks to form a sandwich structure. The emergent end face of the semiconductor laser chip extends out of the edge of the tungsten copper heat sink by 10-20 microns. The invention also discloses a packaging method. The current injection density of the laser module at the laser emitting end is low, so that the optical power density of the emitting end is reduced, the reliability of a device is improved, and the service life of the device is prolonged.

A GaN substrate includes a main surface 1 inclined by 0° to 10° from a (0001) crystal plane which is a Ga-polar plane, and including a Si-doped GaN layer on at least a surface of the main surface 1, in which the Si-doped GaN layer has a Si concentration of 1×1018 atoms / cm3 or more, and a total of bottom areas of recessed defects on a surface of the Si-doped GaN layer is 15% or less of an area of the entire surface of the Si-doped GaN layer.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

The invention provides a photoelectric chip common packaging piece, an optical communication module and a preparation method, the photoelectric chip common packaging piece comprises a carrier plate, an optical chip and an electric chip, one side of the carrier plate is provided with a mounting surface, the mounting surface is provided with an electric interconnection structure, the carrier plate is internally provided with a conductive through hole and an optical interconnection structure, and the conductive through hole is electrically connected with the electric interconnection structure; the optical chip and the electric chip are both arranged on the mounting surface of the carrier plate, the optical chip is electrically connected to the electric chip through an electric interconnection structure, one side, facing the mounting surface, of the optical chip comprises an optical device, and an optical signal emitted by the optical device penetrates through the carrier plate through the optical interconnection structure. Compared with the prior art, efficient conversion and transmission of optical signals and electric signals are achieved, the interconnection distance between chips is shortened to a large extent, signal transmission loss and delay are reduced, signal integrity is improved, and therefore reliable transmission of high-frequency signals is achieved.

A method for fixing an optical element on a substrate in an optical path of an optoelectronic component is specified, comprising the steps: - Providing the optical element having a first surface containing a first surface material and providing the substrate having a second surface containing a second surface material, wherein the first surface material and the second surface material are independently selected from transparent, oxide materials and transparent nitride materials, - applying an alkaline solution to the first surface and / or to the second surface, - Arranging the first surface on the second surface, wherein a connecting layer comprising an inorganic polymer network is formed between the first surface material and the second surface material. Furthermore, an optoelectronic component is specified. The optoelectronic component can be a light-emitting diode, for example, a µ-LED.

According to the laser chip capable of inhibiting in-plane amplified spontaneous emission, the first inclined edge and the second inclined edge are designed, opposite edges parallel to the first cleavage edge and the second cleavage edge respectively are damaged, a first parasitic cavity and a second parasitic cavity existing in a natural cleavage laser chip are eliminated, and the laser chip can inhibit in-plane amplified spontaneous emission. Therefore, the formation of in-plane amplified spontaneous emission of the laser chip is remarkably inhibited, meaningless consumption of carriers in a laser emission layer in the laser chip is prevented, the luminous efficiency of the laser chip on laser wavelength can be improved, the light-light conversion efficiency of the laser from pump light to emission laser is improved, and the output power of the laser is finally improved. And secondly, due to the suppression of amplified spontaneous radiation in a laser chip plane and the improvement of the light-light conversion efficiency of the laser, the power consumption of the laser can be obviously reduced under the condition of certain output power, the operation cost of the laser is reduced to a certain extent, and the cost performance of the laser is improved.

An FM LIDAR system is described that includes a frequency modulated LIDAR system that incorporates a laser source that is optically coupled to a whispering gallery mode optical resonator. Light from the laser that is coupled into the whispering gallery mode optical resonator is coupled back out as a returning counterpropagating wave having a frequency characteristic of a whispering gallery mode of the optical resonator. This returning wave is used to reduce the linewidth of the source laser by optical injection. Modulation of the optical properties of the whispering gallery mode optical resonator results in modulation of the frequency of the frequencies supported by whispering gallery modes of the resonator, and provides a method for producing highly linear and reproducible optical chirps that are highly suited for use in a LIDAR system. Methods of using such an FM LIDAR system and vehicle assisting systems that incorporate such FM LIDAR systems are also described.

A distributed feedback (DFB) laser apparatus has a distributed feedback (DFB) laser (650) comprising a DFB structure (511), a heater (508) arranged to heat the DFB structure to change a lasing frequency of the DFB laser and a heater circuitry hard-wiring configuration (556) hard-wired to route power to a selected portion (616) of the heater such that heating the selected portion (616) changes refractive index of the DFB structure (511) at a position along the DFB structure corresponding to the selected portion, thereby adjusting the lasing frequency.

The utility model discloses a light outlet control device applied to a laser and the laser, and relates to the technical field of lasers. The device comprises a shell, a driving motor, a shading plate and a connecting arm. Wherein a containing space capable of containing the light shielding plate is arranged in the shell, the containing space is divided into a light shielding area and a working area, the light shielding plate can move between the working area and the light shielding area, and when the light shielding plate completely moves to the light shielding area, laser emitted by the laser can be prevented from being emitted from the light outlet. The two ends of the connecting arm are connected with the driving motor and the shading plate correspondingly, and the driving motor can drive the shading plate to reciprocate between the working area and the shading area through the connecting arm. Therefore, whether the light shielding plate moves to the light shielding area capable of shielding laser emission or not can be controlled by controlling operation of the motor, and whether the light shielding plate shields laser emission or not is remotely controlled through the motor under the condition that the laser continuously generates the laser.

The invention belongs to the field of lasers, and discloses a growth method for reducing laser Ith through N grating burying, which subversively adopts an N-type grating structure, uses a built-in P-N junction formed by the N-type grating structure and a subsequent P-type buried layer as a natural and efficient current blocking layer, and structurally eliminates a current leakage path. Afterwards, in the heating stage, trace arsine is introduced to carry out atomic-scale protection on the sensitive grating morphology, at the optimal mass transport temperature, the high mobility characteristic of indium atoms is utilized to carry out shape-preserving filling on grating grooves, flawless preliminary planarization is achieved, and through variable-temperature thickening growth and high-temperature annealing in the pure phosphorus atmosphere, the high-temperature-resistant grating is obtained. And performing quality optimization and defect repair on the buried layer and the key interface. The series of linked steps ensure that the indium phosphide buried layer with flat atomic scale and complete crystal lattice can grow on the fragile N-type grating, and ensure that a high-quality covering layer and an active region grow on the N-type grating.

An optoelectronic device (10) comprises a laser light-emitting component (100) and an optical component (200) with an optical waveguide (201). The laser light-emitting component (100) has a light-exit surface (120) for emitting the laser light and at least one first alignment structure (130) on a first end face (110). The optical component (200) has a light-entry surface (220) on a second end face (210) where the laser light can be coupled into the optical waveguide (201), and at least one second alignment structure (230).The first and second alignment structures (130, 230) are designed to be complementary to each other in order to align the laser light emitting component (100) to the optical component (200) in such a way that the light exit surface (120) and the light entry surface (220) are opposite each other, whereby the laser light is coupled into the optical waveguide (201) in the case of emission of laser light by the laser light emitting component (100).

The invention belongs to the technical field of laser diode illumination and display, and particularly relates to a laser white light device for laser display and illumination and a preparation method thereof. Comprising a laser emission module and a fluorescence conversion module. The fluorescence conversion module comprises a pixelated transparent substrate, a green fluorescent powder unit and a red fluorescent powder unit; groove array structures which are arranged in a staggered mode are distributed on the upper side and the lower side of the pixelated transparent substrate respectively. The green fluorescent powder unit is arranged in the lower side groove array structure, and the red fluorescent powder unit is arranged in the upper side groove array structure; the laser emitting module emits laser from the lower portion of the pixelated transparent substrate to the upper portion, and the green fluorescent powder unit and the red fluorescent powder unit are excited to emit green light and red light respectively and then are fused to form white light. According to the invention, the heat dissipation performance of the fluorescence conversion module is improved, the reabsorption between red and green fluorescent powder is weakened, the luminous efficiency is improved, and a white light LD device with high brightness and high color rendering can be realized.

A vertical cavity surface emitting laser includes an oxide substrate having a first face and a second face at an opposite side from the first face; a semiconductor section disposed on the first face; a dielectric filter layer disposed between the semiconductor section and the first face and having a reflective spectrum configured to provide an optical window; a first DBR mirror; and a second DBR mirror disposed at a curved surface of the second face. The first DBR mirror, the semiconductor section, the dielectric filter layer, the oxide substrate, and the second DBR mirror are arranged in a first axial direction to form an extended cavity. The semiconductor section is disposed between the dielectric filter layer and the first DBR mirror, and includes a p-type III nitride region, an n-type III nitride region, and a III nitride active region between the p-type and n-type III nitride regions.

A multi-layer composite heat dissipation substrate includes a substrate body, a first insulation layer, a first electrode layer, a second electrode layer, and a solder layer. The substrate body has a first surface and a second surface. The first insulating layer is formed on the first surface of the substrate body. The first insulating layer is made of an insulating material selected from the group consisting of: nitride, oxide, and oxynitride. The first electrode layer is formed on a top surface of the first insulating layer. The second electrode layer is located below the substrate body. The solder layer is formed on a top surface of the first electrode layer.

The present disclosure is directed to a manufacturing process for a LIDAR system with individualized semiconductor optical amplifier (SOA) dies including: (a) forming a plurality of SOA regions on a semiconductor wafer; (b) dicing the semiconductor wafer to produce a plurality of individualized SOA dies, the plurality of individualized SOA dies respectively including the plurality of SOA regions; (c) aligning the plurality of individualized SOA dies with one or more array inputs, the one or more array inputs configured to provide a beam from a light source to the plurality of individualized SOA dies; and (d) aligning the plurality of individualized SOA dies with one or more array outputs, the one or more array outputs configured to provide the beam from the plurality of individual SOA dies to an emitter.

A first layer, a first spacer layer, and a second layer of a semiconductor wafer can be etched to produce a plurality of columnar structures extending from the substrate layer and including a first optical cavity situated about the first gain medium, a second optical cavity situated about the second gain medium, and a first spacer region contacting the first gain medium and the second gain medium. Also, a photonic microparticle formed from a layered semiconductor wafer and of a columnar structure having a first optical cavity situated about a first gain medium, a second optical cavity situated about a second gain medium, and a first spacer region contacting the first gain medium and the second gain medium. The first optical cavity and the second optical cavity in the photonic microparticle are each capable of generating laser light with a distinct spectral peak when energetically excited.

Example methods, compositions and structures are presented whereby sub-10-nm-thick strain-relieving Si1-xGex layers can be realized by Ge ion implantation, into, and selective oxidation of, Si(111) wafers. The resulting Ge-rich layers are fully strain relaxed via a network of misfit dislocations at the Si / Si1-xGe, interface, which do not propagate through the Si1-xGex film. The dislocation network has been found to coincide with a periodic variation in the composition at the Si / Si1-xGex interface and is believed to result from the defect-medicated diffusion of Si atoms from the Si substrate through the Si1-xGex layer to the above SiO2 layer. The epitaxial growth of GaAs on such ultra-thin substrates is demonstrated, presenting a promising approach for solving the long-standing challenge of local, monolithic integration of III-V optoelectronics on the Si platform.

A method for manufacturing a laser element includes: a step of preparing a semiconductor substrate (10) having a base substrate (BK), a first growth-inhibiting part (5F) and a second growth-inhibiting part (5S) adjacent to each other across an opening (K), and a first semiconductor part (S1) having a longitudinal shape located above the first growth-inhibiting part (5F) and the second growth-inhibiting part (5S) from the opening (K); a step of forming over the first semiconductor part (S1) a second semiconductor part (S2) including ridges (RJ) located above the first growth-inhibiting part (5F); and a step of scribing a portion of a first laminate (LB1), which includes the first semiconductor part (S1) and the second semiconductor part (S2), on the side where the ridges (RJ) are located.

The present invention discloses a VCSEL chip with a lens structure and a preparation method thereof, wherein the VCSEL chip comprises a GaAs substrate; an NDBR layer, an MQW layer, an oxide layer, a PDBR layer and a P contact layer sequentially grown on the GaAs substrate; a P electrode arranged on the P contact layer in the light exit hole region; an N electrode arranged on the surface of the GaAs substrate close to the NDBR layer; a SIN passivation layer arranged on at least part of the surface of the VCSEL chip; and a lens arranged on the surface of the SIN passivation layer in the light exit hole region. The present invention can not only effectively reduce the divergence angle of the VCSEL chip, but also effectively protect the light exit cavity surface, thereby ensuring that the VCSEL chip has a good appearance.

The invention discloses a silicon-based indium phosphide laser and a preparation method thereof, and relates to the technical field of semiconductor devices, the silicon-based indium phosphide laser comprises a silicon substrate, a composite insulating layer, a Van der Waals buffer layer and an indium phosphide epitaxial structure which are stacked in sequence; the indium phosphide epitaxial structure comprises a first epitaxial structure stacked on the Van der Waals buffer layer and a second epitaxial structure stacked on the first epitaxial structure; the first epitaxial structure at least comprises a lower cladding layer, a lower limiting layer, a lower waveguide layer, a spacing layer, a multi-quantum well active region, an upper limiting layer, an etching stop layer, an upper waveguide layer and an upper cladding layer which are sequentially stacked, a Bragg grating is manufactured in the upper waveguide layer, and the second epitaxial structure comprises a regrowth cladding layer and a contact layer which are sequentially stacked; the Van der Waals buffer layer is a two-dimensional material film, and the problems of lattice mismatch, thermal expansion coefficient mismatch and polarity structure difference of integration of the silicon substrate and the InP epitaxial layer are thoroughly solved from a physical mechanism by introducing the single-layer two-dimensional material Van der Waals buffer layer.

The present invention discloses a silicon substrate gallium nitride wafer including a large mismatch stress regulation structure, and a preparation method and application thereof, and relates to the field of semiconductor material technology. The silicon substrate gallium nitride wafer including a large mismatch stress regulation structure is composed of a silicon substrate, an aluminum nitride amorphous film barrier layer, an ultra-thin porous aluminum oxide weakly bonded decoupling layer, an aluminum nitride single crystal film nucleation layer template layer, and a gallium nitride single crystal film quality improvement layer stacked in sequence. The present invention controls the pore size and pore density in the ultra-thin porous aluminum oxide weakly bonded decoupling layer, thereby achieving the weakly bonded decoupling effect regulation of the aluminum nitride single crystal film nucleation layer template layer thereon, thereby achieving large mismatch stress regulation of silicon substrate gallium nitride materials, crack-free thickness and material crystal quality, and improving material preparation efficiency. The silicon substrate gallium nitride wafer including a large mismatch stress regulation structure of the present invention can be used to develop and produce gallium nitride-based power electronic devices, microwave radio frequency devices, and optoelectronic devices.

Described herein are photonic communication platforms and related packages. In one example, a photonic package includes a substrate carrier having a recess formed through the top surface of the substrate carrier. The substrate carrier may be made of a ceramic laminate. A photonic substrate including a plurality of photonic modules is disposed in the recess. The photonic modules may be patterned using a common photomask, and as a result, may share a same layer pattern. A plurality of electronic dies may be positioned on top of respective photonic modules. The photonic modules enable communication among the dies in the optical domain. Power delivery substrates may be used to convey electric power from the substrate carrier to the electronic dies and to the photonic substrate. Power delivery substrates may be implemented, for example, using bridge dies or interposers (e.g., silicon or organic interposers).

A source wafer for use in a micro-transfer printing process. The source wafer comprises: a substrate; a device coupon (110), including an optoelectronic device; and a breakable tether securing the device coupon to the substrate. The breakable tether includes one or more breaking regions which connect the breakable tether to the substrate.

The application provides a laser chip with improved reliability and a preparation process thereof, and aims to solve the technical problem that an edge-emitting laser is prone to end face failure.The laser chip comprises a substrate, the back surface of the substrate is provided with an N electrode, the front surface of the substrate is provided with an epitaxial material, the top layer of the epitaxial material is an ohmic contact layer, the epitaxial material is provided with a waveguide, and the vicinity of the waveguide is a waveguide region; an insulating medium layer is arranged on the surface of the epitaxial material, the waveguide region and the insulating medium layer are provided with a P electrode, but the ohmic contact layer in the waveguide region is not provided with the insulating medium layer, and the P electrode is in contact with the ohmic contact layer; the end surface of the laser chip is provided with an electrode-free area, and the electrode-free area is not provided with the insulating medium layer and the P electrode above the electrode-free area.The application further comprises a preparation method of the laser chip.The electrode-free area is arranged on the end surface of the laser, and the electrode-free area can improve the COD threshold level and improve the reliability.

The utility model relates to a rectangular optical system and a rectangular laser transmitter. The rectangular optical system comprises a laser source used for emitting laser; the laser collimation piece is arranged at the laser emitting end of the laser source so as to focus the laser into collimated laser, and the laser collimation piece at least comprises a first plano-convex lens and a second plano-convex lens which are sequentially arranged on a laser path; and the rectangular array mirror is arranged at the laser emitting end of the laser collimation piece so as to emit the incident collimation laser into a rectangular light spot. According to the utility model, laser is collimated and emitted into rectangular light spots, light focusing and overall uniform emission are realized, the accuracy and the stability of laser irradiation are improved, and the device is suitable for multiple fields of medical treatment, manufacturing and the like, and has relatively high practicability and economical efficiency.

A dry etching method for indium-containing III-V compound semiconductor materials, relating to the field of semiconductor laser processing technology, solves the problem of volatile InCl during etching of indium-containing compound semiconductor laser materials in existing technologies. x Deposition leads to decreased etching rates, cavity contamination, and high-temperature assisted etching causes mask loss, morphology degradation, and process instability. This invention addresses these issues by setting a cycle program that alternates between etching and rinsing pulses. During the etching stage, H2 is introduced to suppress the formation of non-volatile InCl3 products and simultaneously convert InCl3 products into InCl2, effectively inhibiting byproduct formation and improving etching efficiency. During the physical rinsing stage, Ar is used to effectively remove non-volatile InCl3 adhering to the surface of the etched material. x The product exposes the semiconductor substrate, promoting chemical pulses to carry out chemical reactions to etch the substrate, effectively preventing cavity contamination and a decrease in etching uniformity, and significantly improving the controllability and repeatability of the etching morphology.