The invention discloses an AlN buffer layer of an LED and an epitaxial growth method of the buffer layer. The method comprises the steps of performing growing of an AlN-1 thin film layer, cooling a sapphire substrate, and performing growing of an AlN-2 thin film layer, a Si-doped n-GaN layer, a light-emitting layer, a p-type AlGaN layer and a high-temperature p type GaN layer, and carrying out cooling, wherein the step of performing growing of the AlN-1 thin film layer comprises the steps of putting the sapphire substrate into a magnetron sputtering reaction device to be heated to 650 DEG C, and introducing Ar, N2 and O2, wherein the sputtering bias voltage is controlled to be reduced from 3000V to 2200V, and the target-substrate distance is set to be 3-4cm, and the sputtering thickness ofthe AlN-1 thin film layer is 15-20nm; and the step of performing growing of the AlN-2 thin film layer comprises the steps of putting the sapphire substrate with the AlN-1 thin film layer in an MOCVDreaction cavity, wherein the temperature is controlled to be gradually increased to 950 DEG C from 850 DEG C, the pressure of the reaction chamber is kept to be 250 mbar, and H2, NH3 and a TMAl sourceare pumped, and the AlN-2 thin film layer with the growth thickness of 15-20 nm is grown Compared with the prior art, the brightness of the LED is higher.