Method for producing silicon single crystals and silicon single crystal produced thereby

Abstract

The growth method of the silicon single crystal is to cool at least a part of the silicon single crystal with a cooling member which surrounds the silicon single crystal being grown and whose inner peripheral surface is coaxial with the pulling axis, and uses the Ceclaus The silicon single crystal is grown by the basic method, and the medium gas for growing the above single crystal includes a gas containing hydrogen atom substances.

Description

technical field [0001] The present invention relates to a method for growing a silicon single crystal as a material for a silicon wafer, and in particular to a method for growing a silicon single crystal with a dislocation-free portion at a high yield, capable of suppressing dislocations caused by thermal stress, and for growing a silicon single crystal using the method. silicon single crystal. Background technique [0002] As a method for producing a silicon single crystal as a silicon wafer material, a growth method using the Czochralski method (hereinafter referred to as "CZ method") is well known. Conventionally, in order to efficiently produce a silicon single crystal of desired quality by the CZ method, a technique for adjusting the temperature of a silicon single crystal under growth has been known. For example, a technique for increasing the maximum pulling rate by rapidly cooling the vicinity of the solid-liquid interface of a silicon single crystal during pulling ...

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Problems solved by technology

[0003] However, the technology described in Patent Document 1 has the following problems: dislocations due to thermal stress due to cooling of the silicon single crystal tend to occur, and productivity and yield are not good.

Therefore, when the pulled silicon single crystal is

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