154 results about "Drain current" patented technology

The present invention relates to the technical field of semiconductors, and provides a CS-JL device and a manufacturing method therefor, and an electronic device. In the manufacturing method for the CS-JL device, a Core layer is prepared first; then a dummy gate structure, a sidewall structure, a source, and a drain are prepared; then a Shell layer is prepared by removing the dummy gate structure; and finally a gate structure is formed. This method effectively avoids the impact of high temperatures required during the preparation of the sidewall structure, the source, the drain, etc. on impurity diffusion in a channel region, facilitates accurate control of the doping concentrations and thicknesses of the Core layer and the Shell layer, reduces an off-state leakage current of the CS-JL device, and improves the device performance thereof.

The utility model provides a single iron core measures ac leakage current system, it has solved leakage current detection circuit cost higher problem, it includes power module, power module is connected with measurement circuit and MCU module, measurement circuit has two groups of operational amplifier follower, one group of operational amplifier follower is connected through sampling resistance R9 with the one end of the measurement coil that is wound on annular core, the other end of measurement coil is connected through another group of operational amplifier follower with the PWM pin of MCU module, the ADC pin of MCU module is connected on sampling resistance R9. The utility model has good leakage detection effect, lower cost and the like advantages.

A display pixel compensation circuit device using a dual-slope includes N channel multiplexers respectively coupled to sensing lines of corresponding channels; a sensing current conveyor configured to sense, on a target sensing line selected by control signals, a drain current of a target pixel's driving thin-film transistor; a noise current conveyor configured to sense, on an adjacent sensing line, panel noise, the adjacent sensing line being next to the target sensing line; and dual-slope error-detection circuitry configured to derive a pixel error from outputs of the two conveyors, convert the error into a sign value and an error value, and store these in a memory. In subsequent frames, the error value is arithmetically added to or subtracted from the digital pixel signal according to the sign value and supplied to respective channels, enabling real-time multi-bit correction with reduced silicon area and improved power efficiency.

The invention belongs to the field of power system monitoring and fault diagnosis, and particularly relates to a cable branch box health early warning method based on fusion of insulation resistance and leakage current. The method comprises the following steps: acquiring insulation resistance and leakage current signals which are synchronously aligned by using a sensing monitoring unit, and extracting deterministic characteristics through nonlinear preprocessing; performing phase-space reconstruction on the leakage current signal, and calculating the maximum Lyapunov exponent, correlation dimension and other dynamic characteristic indexes so as to quantify the chaotic evolution degree responded by the insulating medium; and constructing an evaluation model based on fusion of insulation resistance and dynamic indexes, calculating a comprehensive health index, comparing the comprehensive health index with a threshold value, and determining an early warning level. According to the method, the qualitative change omen at the initial stage of insulation degradation can be sensitively captured by fusing the macroscopic electrical parameters and the microdynamics evolution characteristics, the advancement and the anti-interference capability of early warning are improved, reliable support is provided for refined operation and maintenance of the cable branch box, and the power supply reliability of a power system is guaranteed.

The application provides a self-calibration circuit and method of a dynamic blood glucose monitoring chip. It relates to the field of dynamic blood glucose monitoring, and solves the problem of error caused by the input offset of the operational amplifier which cannot be calibrated. The circuit comprises a digital-to-analog converter which transmits a first voltage value to the positive input end of a first operational amplifier and transmits a second voltage value to the positive input end of a second operational amplifier; the output end of the first operational amplifier is connected to the counter electrode of a sensor; the reference electrode of the sensor is connected to the negative input end of the first operational amplifier, and the working electrode of the sensor is connected to the negative input end of the second operational amplifier; the output end of the second operational amplifier is transmitted to a first analog-to-digital converter, and the second end of the first analog-to-digital converter is accessed through a cross resistance. The application can calibrate the error caused by the input offset of the operational amplifier, the error caused by the drain current of all MOS tubes on the signal link, and the resistance value of the pre-operational amplifier circuit.

The application relates to the technical field of circuit protection, in particular to a transient overvoltage protection device with active isolation and reconstruction functions, and discloses a system named a transient overvoltage protection device with active isolation and reconstruction functions, which aims to solve the problems of single-point failure and protection interruption caused by performance degradation of metal oxide varistors. The device comprises a main / auxiliary discharge path, a state sensing module and a central cooperative controller; by monitoring the leakage current, temperature and clamping voltage in real time, the controller actively turns off the main path before the element deteriorates and switches to the standby path in milliseconds, so that the reconstruction is realized without disturbance. The scheme ensures that the protection function is continuously effective, and significantly improves the system resilience and power supply safety.

The invention relates to a method for compensating leakage currents (48, 50) from at least two connecting lines (18, 22, 100, 102) that connect a lambda probe (2, 78) to a control device (4, 98), wherein the method comprises the following steps: - Determining, for at least one of the connecting lines (18, 22, 100, 102), an associated leakage current (48, 50), - Determining, for each determined leakage current (48, 50), whether the respective leakage current (48, 50) is a result-relevant leakage current (48) that affects the result of a lambda measurement performed by the lambda probe (2, 78), or not, - Determining a compensation current, wherein only the result-relevant leakage currents (48) are taken into account in its determination, - Applying the compensation current to at least one of the connecting leads (18, 22, 100, 102) of the lambda sensor (2, 78).

The application discloses a low-power-consumption LIN bus receiving circuit, which comprises a first current mirror composed of two high-voltage PLDMOS tubes, two high-voltage NLDMOS tubes, the sources of the two high-voltage PLDMOS tubes are connected with a power supply VBAT respectively, the drain of one high-voltage PLDMOS tube is connected with a LIN bus, the drain of the other high-voltage PLDMOS tube is connected with a node Vc, and the node Vc is grounded, the gates of the two high-voltage NLDMOS tubes are connected with the node Vc in series, the drain of one high-voltage NLDMOS tube is connected with the power supply VBAT, the source is grounded and connected with one input end of a comparator, the drain of the other high-voltage NLDMOS tube is connected between the LIN bus and the drain of one high-voltage PLDMOS tube, the source is grounded and connected with the other input end of the comparator. The application can completely close the path from the LIN bus to the ground when the LIN bus is in a recessive state, so that the static power consumption is zero, and the problem that the overall power consumption of a chip is high due to a leakage current in a traditional scheme is solved.

This invention provides a method for integrating low-voltage devices in a high-voltage process. The method includes: after forming gate dielectric layers for high-voltage and medium-voltage device regions, forming a front dielectric layer covering all regions; forming a mask layer covering the medium-voltage and low-voltage device regions, exposing the input / output and high-voltage device regions; removing the exposed front dielectric layer to form the gate dielectric layer for the input / output device regions; and finally forming a mask layer to expose the low-voltage device regions, removing the surface dielectric layer to form the gate dielectric layer for the low-voltage device regions. This invention protects the low-voltage device regions through a mask layer, avoiding damage and silicon loss caused by prolonged exposure of the silicon surface and repeated etching and resist removal, reducing defect introduction, improving the height difference between the active region and the shallow trench isolation structure, and enhancing the reliability of the low-voltage devices and the local uniformity of saturated leakage current.

This utility model discloses a protection circuit, a terminal block, and a cryogenic sensor system. The protection circuit of this application is characterized by comprising a first surge protection module and a second surge protection module; wherein the first surge protection module comprises a first junction field-effect transistor and a first TVS diode connected in series; the second surge protection module comprises a second junction field-effect transistor and a second TVS diode connected in series; the first surge protection module and the second surge protection module are connected in reverse parallel on the same signal line to suppress forward and reverse overshoot voltages on the signal line. The terminal block of this application includes the above-mentioned protection circuit; the cryogenic sensor system of this application includes an input module, multiple cryogenic sensors, and the terminal block. The protection circuit of this application not only reduces leakage current during normal circuit operation but also effectively protects the internal circuitry when the circuit malfunctions.

The present application relates to the technical field of multi-parameter detection, and a SiC-based MOS structure transistor multi-parameter detection method and system, comprising: obtaining static evaluation parameters, obtaining normal single-cycle current waveband, drain-source voltage waveform diagram, drain current waveform diagram and cycle gate-source voltage sequence, obtaining dynamic evaluation parameters, inputting the static evaluation parameters and the dynamic evaluation parameters into a pre-constructed deep learning model to obtain a comprehensive performance score, if the comprehensive performance score is greater than a preset comprehensive performance score threshold, regarding the SiC MOS structure transistor to be detected as a qualified SiC MOS structure transistor, otherwise, regarding the SiC MOS structure transistor to be detected as a defective SiC MOS structure transistor, and completing SiC-based MOS structure transistor multi-parameter detection based on the qualified SiC MOS structure transistor or the defective SiC MOS structure transistor. The present application can improve the reliability of SiC MOS devices and optimize the application performance thereof.

This invention belongs to the field of photon counting detector manufacturing technology, specifically relating to a plasma treatment method for the crystal surface of a photon counting detector and the resulting photon counting detector. The treatment method employs a step-by-step plasma surface modification process. First, the crystal wafer surface is bombarded with plasma generated by the ionization of an inert gas. Then, a secondary bombardment is performed using plasma generated by the ionization of reactive gases such as oxygen and hydrogen. Simultaneously, key process conditions such as process gas flow rate, wafer orientation bias, processing time, cavity vacuum, radio frequency power, plasma parameters, and wafer spacing are systematically controlled. This step-by-step modification process achieves nanoscale modification of the crystal surface, effectively repairing surface damage caused by processing and forming a uniformly distributed surface modification layer. Photon counting detectors fabricated using this method can significantly reduce device leakage current, improve withstand voltage performance, optimize energy resolution, and improve photon counting rate and counting stability.

This disclosure pertains to a semiconductor structure of an on-substrate gate all-around field-effect transistor (GAAFET). This semiconductor structure includes an isolation layer beneath the source / drain epitaxial structures of the GAAFET. The isolation layer comprises silicon oxide and is formed using a flowable chemical vapor deposition process. The isolation layer is disposed on the side of the bottommost internal spacer structure of the GAAFET and protrudes into the substrate. The isolation layer suppresses leakage current across the substrate between the opposing source / drain epitaxial structures. The isolation layer also suppresses leakage current across the bottommost internal spacer structure between the gate structure and the source / drain epitaxial structures of the GAAFET.

The present invention relates to a junction box having a leakage current limiting function, in which a leakage current is limited by using an area difference between conductor electrodes respectively connecting end portions of single-phase three-wire input-side phase voltage lines (R lines), neutral lines (N lines), and ground lines (G lines) and output-side phase voltage lines (R lines), neutral lines (N lines), and ground lines (G lines), so that an electric shock accident can be more effectively prevented.

The utility model relates to electrical measurement and automation test technical field, concretely relates to a kind of AC-DC withstand voltage insulation tester, it includes: main control unit, for executing test program and controlling each module coordinated work;High voltage output module, for generating the AC / DC high voltage required by test;Precise current detection module, for detecting the leakage current of measured piece;Multi-channel test interface, for connecting multiple measured equipment;Automatic switching unit, for automatically switching test channel;Data storage module, for automatically recording test data;Man-machine interface, for displaying test information and receiving operation instruction.The utility model is jointly constituted by innovative design an advanced test system with automation, high precision, high efficiency, intelligent management in one, realizes qualitative leap in test quality, operation convenience, production efficiency and safety etc., fully meets the rigorous requirement of modern industry to electrical safety test equipment.

The application provides a variable driving parameter silicon carbide MOSFET active driving method, circuit and device. The active driving method comprises: in the on process, a power supply is controlled to apply a first weak driving level in a first time period and a first strong driving level in other time periods, the starting time of the first time period is the time when the silicon carbide MOSFET enters the Miller platform, and the ending time is the time when the drain current reaches the current overshoot peak value; in the judgment process, the power supply is controlled to apply a second weak driving level in a third time period and a second strong driving level in other time periods, the starting time of the third time period is the time when the drain-source voltage is equal to the DC bus voltage, and the ending time is the time when the drain-source voltage reaches the voltage overshoot peak value. The method has good versatility and high engineering application value, reduces the additional switching loss caused by weak driving, maintains high switching speed while ensuring the overshoot suppression effect, and thus realizes a better compromise between overshoot, loss and switching time.

1. Name of the designed product: leakage current sensor (RCMU101SN-2P2E-8LU5). 2. Use of the designed product: for leakage detection of AC and DC currents. 3. Design points of the designed product: in shape. 4. Picture or photo best indicating the design points: perspective view.

The application discloses a semiconductor device leakage current detection circuit, and belongs to the technical field of leakage current detection, and solves the problem of how to improve the precision of leakage current detection. A first operational amplifier unit, a second operational amplifier unit, a third operational amplifier unit, a fourth operational amplifier unit and a fifth operational amplifier unit are connected in series, the output ends of the first operational amplifier unit, the second operational amplifier unit, the third operational amplifier unit, the fourth operational amplifier unit and the fifth operational amplifier unit are connected with a plurality of input ends of a multiplexer unit, the output end of the multiplexer unit is connected with an input end of an analog-to-digital converter, and the output end of the analog-to-digital converter is connected with an input end of an MCU. The sampling voltage is amplified by the multiple-stage operational amplifier units, the voltage value output by the operational amplifier unit is collected by the multiplexer after each amplification, and it is judged whether the voltage value is within a preset range, different current ranges are matched step by step, and it is ensured that the signals of each order are within the optimal measurement range of the ADC, so that the test efficiency is effectively improved.

A power cord photocoupler leakage current detection interrupter (LCDI) includes: a switch unit provided between an input terminal and an output terminal, and configured to control the input terminal and the output terminal to turn on or off; a leakage current detection line wrapped with a power cord connected between the switch unit and the output terminal, and configured to detect whether the power cord has a leakage current; and a leakage current interruption unit connected to the switch unit and the leakage current detection line, and configured to detect a leakage current signal of the leakage current detection line, and send a corresponding control signal to the switch unit according to the leakage current signal.

This invention provides an inexpensive leakage current measuring device with a relatively simple configuration, without requiring high-speed processing components suitable for fast Fourier transforms. [Solution] The processing means 15 of the leakage current measuring device 1 performs, in parallel, a first calculation process that calculates the effective leakage current Ior of the insulation resistance using the average value S_ave of instantaneous multiplication values ​​obtained by synchronously multiplying the combined leakage current Io_d for one period from an arbitrary change point of the sampling start clock U_clk with the sinusoidal data Sin_d, and a second calculation process that calculates the effective leakage current Ior of the insulation resistance using the average value S_ave of instantaneous multiplication values ​​obtained by synchronously multiplying the combined leakage current Io_d for one period from a change point of the sampling start clock U_clk that is 1 / 2 period delayed from the change point of the sampling start clock U_clk.

The present application relates to the technical field of semiconductor device manufacturing, in particular to a kind of topography detection method of multilayer nested well, comprising: one of the first doped well and third doped well is used as collector region, the other is used as emitter region, and the second doped well is used as base region, to obtain a pseudo-BJT structure;The thickness of the second doped well meets the size requirement of base region;Respectively, voltage is applied to the first doped well, the second doped well and the third doped well, so that the collector junction of pseudo-BJT structure is reverse biased, and the emitter junction is zero biased;Test the leakage current between the first doped well and the third doped well;Based on the leakage current tested, the topography state of the second doped well is obtained.In the present application, the multilayer nested well is used as the pseudo-BJT structure for leakage current detection, which can accurately detect the topography anomaly of the doped well according to the size of the leakage current, and the topography of the entire doped well can be determined whether there is an anomaly through one test, and the test is more convenient.

An apparatus may comprise a synapse comprising a first reconfigurable field-effect transistor; a second reconfigurable field-effect transistor connected in parallel to the first reconfigurable field-effect transistor; an input voltage applied to each of the first reconfigurable field-effect transistor and the second reconfigurable field-effect transistor corresponding to an input attribute associated with an error computation; and a current sensor measures a saturation drain current of the first reconfigurable field-effect transistor and the second reconfigurable field-effect transistor and determines a Euclidean error based on the saturation drain current of the FETs.

Transistors with improved saturation drain current and methods for making such transistors are disclosed. The gate is formed in the shape of a longitudinal trench and a plurality of lateral trenches below the longitudinal trench. The resulting dual-recess structure increases the surface area of the gate, which permits additional charge carriers and increases the saturation drain current of the transistor. Such transistors can be useful in high voltage and medium voltage applications such as in display driver integrated circuits.

This invention relates to the field of weak current detection technology. Microcurrent detection technology is susceptible to circuit noise, environmental interference, and switching delays. Current range switching relies on software processes, which carries risks of sampling delay, judgment lag, and program crashes. This invention provides an adaptive threshold microampere-level current sampling network structure and its control method. Several parallel voltage acquisition and amplification branches are connected to the microcurrent to be measured. Range switching is achieved using logic processing control circuits and switching units. A closed-loop feedback control circuit is formed through latches and NOT gates to avoid logic oscillations during switching, improving the stability of the detection process. Optical coupler control ensures that only one voltage acquisition and amplification branch is allowed to conduct at any given time. The high isolation characteristics of the optocoupler effectively suppress leakage current in microcurrent measurement and avoid mutual interference between resistors of different branches, significantly reducing thermal noise in the sampling circuit and improving sampling accuracy and signal-to-noise ratio.

This invention discloses a switching circuit and a multi-channel switching circuit. The switching circuit includes first to fifth switching modules, each comprising a control element and a switch group. The control element includes first and second control terminals, and the switch group includes a first terminal and a second terminal. The first and second control terminals are connected to control signals from the switching modules. The second terminal of the first switching module is connected to the first terminal of the second and third switching modules, and the second terminal of the second switching module is connected to the first terminals of the fourth and fifth switching modules. The first terminal of the first switching module is connected to a first main signal Va, and the second terminal of the fourth switching module is connected to a second main signal Vb. When the switching circuit is on, Va and Vb are equal. The second terminal of the third switching module is connected to a first protection signal, and the first terminal of the fifth switching module is connected to a second protection signal. The first protection signal is equal to Va, and the second protection signal is equal to Vb. This reduces leakage current in the switching circuit.

The application provides a common-mode choke design method for reducing the effective value of motor leakage current, and faces the field of motor drive and electromagnetic compatibility. In view of the problem that the existing researches pay more attention to common-mode voltage and ignore leakage current caused by high switching frequency, the mechanism of leakage current is first clarified, the common-mode equivalent circuit is established, the influence of bearing current is evaluated, and the nonlinear link is simplified. The mathematical expression of the choke for suppressing the leakage current is derived, the secondary resistance is optimized based on the root locus, and the core parameters are adjusted. Through simulation and comparative evaluation verification, the optimized choke can significantly reduce the effective value of the leakage current and improve the system EMC, and provides a feasible scheme for precise suppression of high-frequency motor drive.

This invention discloses a safe measurement method for the insulation resistance of high-voltage circuits based on coupling unit isolation and independent boost power supply, belonging to the field of high-voltage electrical insulation testing technology. The method includes establishing an isolated injection channel between the measurement end and the high-voltage circuit through a coupling unit; outputting an initial boost test signal from an independent boost power supply unit; generating a test energy index based on the ground response voltage and leakage response current; generating an insulation load withstand threshold based on the test energy index and defining a safe measurement constraint range to determine the boost adjustment result; correcting the test voltage amplitude, boost change slope, and injection duration based on the boost adjustment result to generate an adjustment test signal; calculating the high-voltage circuit insulation resistance value based on the adjustment response voltage and adjustment leakage current, and generating the insulation measurement result. This invention reduces the additional impact of test injection on the tested circuit while maintaining measurement sensitivity, improving the safety, stability, and reliability of insulation resistance measurement.

To accurately detect leakage currents occurring in each of the multiple phase circuits included in the power system. [Solution] A monitoring device comprising: a derivation unit that derives leakage current components of each order generated by the fundamental wave and harmonics constituting the voltage of the circuit, based on the insulation resistance value to ground of each of the multiple phase circuits included in the system and the capacitance value to ground of each of the multiple phase circuits; and an output unit that outputs an insulation monitoring result or a leakage current monitoring result for the system according to the magnitude of the leakage current including the leakage current components of each order derived for each of the multiple phases by the derivation unit.

An electric leakage detection circuit for a mining direct-current intrinsically safe power supply system, the circuit comprising a switch module (10) and an alternating-current transformer (20), wherein the switch module (10) is used for converting, by means of periodic on-off switching, a direct-current leakage current generated in a power supply circuit into a periodic pulse current, and the alternating-current transformer (20) is used for generating an induced current on the basis of the periodic pulse current. The electric leakage detection circuit can use a low-cost alternating-current mutual inductance component in a direct-current power supply system, and has the beneficial effects of a good detection effect, a simple structure, a low cost, and convenient production, installation and commissioning.