513 results about "Gate capacitance" patented technology

There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs_(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that

A high efficiency switching power supply including an analog front end, a battery control circuitry portion, a display and equalization circuitry portion, field effect transistor (FET) drivers, an isolated power supply transformer circuitry (and three associated sets of tap circuitry), microcontroller circuitry, oscillator circuitry, overcharge protection circuitry, programmable logic circuitry portion, and a zero current predictor. Overbiasing of the FET power supply switches, and/or other various circuitry features disclosed herein, helps achieve electrical power efficiencies of preferably greater than 95%, even more preferably greater than 98% and even more preferably greater than 99%. Preferably, the switching power supply has one or more of the following: (1) high electrical power efficiency (>95%. >98%, >99%); (2) overbiasing of a gate of a power supply switch; (3) a power supply switch with a low gate capacitance ratio; (4) multiple modes of operation; and (5) current prediction wherein an inductor voltage is used to control a constant current capacitor whose voltage indicates the level of current in the inductor.

A resonate gate drive circuit for driving at least one power switching device recovers energy loss for charging and discharging the gate capacitance of the power switching devices. The gate drive circuit uses a current source to charge and discharge the gate capacitance with a high current, reducing the switching loss of the power switching device. The gate drive circuit comprises four semiconductor bidirectional conducting switching devices connected in a full-bridge configuration. An inductor connected across the bridge configuration provides the current source. The gate drive circuit may be used in single and dual high-side and low-side, symmetrical or complementary, power converter gate drive applications.

A semiconductor device according to the invention includes p-type well region 3 and n⁺ source region 4, both formed selectively in the surface portion of n⁻ drift region 2; trench 6 in contact with n⁺ source region 4 and extending through p-type well region 3 into n⁻ drift region 2; field plate 8 formed in trench 6 with first insulator film 7 interposed between the trench 6 inner surface and field plate 8; gate electrode 10 formed in trench 6 with second insulator film 9 interposed between the trench 6 side wall and gate electrode 10, gate electrode 10 being formed above field plate 8; first insulator film 7 being thicker than second insulator film 9; and n⁻⁻ lightly doped region 21 in n⁻ drift region 2, n⁻⁻ lightly doped region 21 crossing under the bottom surface of trench 6 from the corner portion thereof, n⁻⁻ lightly doped region 21 covering the bottom surface of trench 6.

The semiconductor device according to the invention and the method of manufacturing the semiconductor device according to the invention facilitate lowering the ON-state voltage, preventing the breakdown voltage from lowering, lowering the gate capacitance, and reducing the manufacturing costs.

Usually, in power converters, the load on a MOSFET is inductive, and the current cannot change rapidly. The drain current is the upper limit of the Miller current, so that if the gate current is larger than the drain current, the gate capacitance will continue to discharge and there can be no Miller shelf. If a parallel capacitor is used with a MOSFET, once the drain voltage starts to rise, the load current divides, placing a new lower limit on the Miller current. To drive a MOSFET with a gate current that exceeds the drain current, the circuit impedances have to be very low, suggesting a new geometry and packaging arrangement for the MOSFET and gate drive. A compatible gate turn of circuit is also disclosed.

In accordance with the present invention, a switching converter includes two transistors Q1 and Q2 parallel-connected between two terminals. Transistor Q1 is optimized to reduce the dynamic loss and transistor Q2 is optimized to reduce the conduction loss. Q1 and Q2 are configured and operated such that the dynamic loss of the converter is dictated substantially by Q1 and the conduction loss of the converter is dictated substantially by Q2. Thus, the tradeoff between these two types of losses present in conventional techniques is eliminated, allowing the dynamic and conduction losses to be independently reduced. Further, the particular configuration and manner of operation of Q1 and Q2 enable reduction of the gate capacitance switching loss when operating under low load current conditions.

A charge pump power supply for a consumer device audio power stage has an efficiency selected according to signal level. The frequency of operation of the charge pump and/or the effective size of a switching transistor bank is adjusted based upon a volume (gain) setting, or a detected signal level, so that internal power consumption of the charge pump is reduced when high output current is not required from the audio power stage and consequently from the charge pump. Operating modes of the charge pump are selected by the signal level indication and include at least a high power and a high efficiency mode selected by setting the charge pump operating frequency and/or enabling or disabling switching of one or more of multiple parallel transistors used to implement each switching element of the charge pump, thereby setting the level of gate capacitance being charged/discharged by the gate driver circuit(s).

A FinFET device and a method of lowering a gate capacitance and extrinsic resistance in a field effect transistor, wherein the method comprises forming an isolation layer comprising a BOX layer over a substrate, configuring source/drain regions above the isolation layer, forming a fin structure over the isolation layer, configuring a first gate electrode adjacent to the fin structure, disposing a gate insulator between the first gate electrode and the fin structure, positioning a second gate electrode transverse to the first gate electrode, and depositing a third gate electrode on the fin structure, the first gate electrode, and the second gate electrode, wherein the isolation layer is formed beneath the insulator, the first gate electrode, and the fin structure. The method further comprises sandwiching the second gate electrode with a dielectric material. The fin structure is formed by depositing an oxide layer over a silicon layer.

A single-poly EEPROM memory device comprises source and drain regions in a semiconductor body, a floating gate overlying a portion of the source and drain regions, which defines a source-to-floating gate capacitance and a drain-to-floating gate capacitance, wherein the source-to-floating gate capacitance is substantially greater than the drain-to-floating gate capacitance. The source-to-floating gate capacitance is, for example, at least about three times greater than the drain-to-floating gate capacitance to enable the memory device to be electrically programmed or erased by applying a potential between a source electrode and a drain electrode without using a control gate. A current path between the source and drain electrodes generally defines current carrying portions of the source and drain regions, and a non-current carrying portion of the source region residing outside the current carrying portion, wherein substantially more of the floating gate overlies the non-current carrying portion than the current carrying portions.

The present invention relates to an electrostatic discharge (ESD) clamp circuit that is used to protect other circuitry from high voltage ESD events. The ESD clamp circuit may include a field effect transistor (FET) element as a clamping element, which is triggered by using a drain-to-gate capacitance and a drain-to-gate resistance of the FET element and a resistive element as a voltage divider to divide down an ESD voltage to provide a triggering gate voltage of the FET element. In its simplest embodiment, the ESD clamp circuit includes only an FET element, a resistive element, a source-coupled level shifting diode, and a reverse protection diode. Therefore, the ESD clamp circuit may be small compared to other ESD protection circuits. The simplicity of the ESD clamp circuit may minimize parasitic capacitances, thereby maximizing linearity of the ESD clamp circuit over a wide frequency range.

A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly or indirectly by using layers composed of multi-layer thin film stacks, or in other embodiments, by a single blocking layer. By taking advantage of unexpected etch selectivity of the multi-layer stack or the controlled etch process of a single layer stack, etch damage to the high-k may be avoided and work function metal thicknesses can be tightly controlled which in turn allows field effect transistors with low Tiny (inverse of gate capacitance) mismatch.

Provided is a current-source gate driver for use with a switching device having a gate capacitance, including an input terminal for receiving a DC voltage; a first switch connected between the input terminal and an output terminal; a second switch connected between the output terminal and a circuit common; a series circuit comprising a first capacitor and an inductor, the series circuit connected between the input terminal and the output terminal; wherein the gate capacitance of the switching device is connected between the output terminal and the circuit common. The current-source gate driver improves efficiency of the power switching devices of a voltage regulator module or other switching converter.

An apparatus and method for adaptively controlling power supplied to a hot-pluggable subsystem controls the inrush current of the hot-pluggable subsystem when the subsystem is coupled to another system that supplies power, and optionally other signal connections. The apparatus and method adaptively control a pass device by detecting the voltage at the gate of the pass device during initial charging of the gate. The gate voltage may be sampled and used subsequently to control the operation of the pass device, and short-circuit conditions may be detected by determining that the miller effect does not change the charging of the gate capacitance. Automatic restart circuitry can be included to generate multiple startup attempts, and under-voltage lockout circuitry and power-on-reset timers can be used to provide a robust solution. The apparatus and method can be adapted to provide a three terminal device that does not require a feedback connection from a power supply output. The three terminal device may include the pass device, or may control an external pass device.

To keep input capacitance and driving capability at respective data input and output terminals of a flip-flop circuit, the flip-flop includes: a mater latch portion; a slave latch portion; and a data output selecting portion. The master latch portion includes a tri-state inverter, which is connected to the input terminal. The data output selecting portion is constituted by two pass gates and an inverter, which is connected to the output terminal. The input capacitance of the flip-flop circuit is determined by gate capacitances of transistors constituting the tri-state inverter connected to the input terminal. The driving capability of the flip-flop circuit is determined by the driving capability of the inverter connected to the output terminal. Accordingly, both the input capacitance and the driving capability are kept constant, irrespective of the state of a timing signal such as a clock signal.

In a gate driving circuit, when a driving target device is turned on, an auxiliary driving element is turned on to form a closed circuit comprising a DC power source, a reactor, an auxiliary driving element and an OFF-driving element, and make reactor current flow in the direction from a power source intermediate point to an output point in advance. Just before the driving target device is turned on, the OFF-driving element is turned off to form a resonance circuit comprising the reactor, the auxiliary driving element and the gate capacitance, and make gate current (reactor current) flow so that the gate capacitance is charged by using resonance phenomenon of the resonance circuit.