88 results about "Miller effect" patented technology

A test structure including a differential gain cell and a differential signal probe include compensation for the Miller effect reducing the frequency dependent variability of the input impedance of the test structure.

A solid state image sensor includes a pixel unit and a readout unit that reads out per-pixel pixel signals from the pixel unit. The readout unit includes: a plurality of column-parallel comparators that compare a readout signal potential to a reference voltage and output a determination signal; and a plurality of counters that count the comparing time of a corresponding comparator. Each comparator includes: a first amp containing a differential amplifier that receives the reference voltage at the gate of a transistor, receives the readout signal at the gate of another transistor, and compares the reference voltage to the readout signal potential; a second amp containing an amplifier that increases the gain of the first amp's output; and a capacitor connected between the input and the output of the amplifier in the second amp in order to exhibit the Miller effect.

A method is contemplated. According to the method, capacitances in a first resistance / capacitance (RC) extraction corresponding to a circuit are modified. Each capacitance is modified to estimate Miller effect on that capacitance. A ratio of a total capacitance on a first wire after the modification in the first RC extraction to a total capacitance on the first wire before the modification in the first RC extraction is calculated. Capacitances in a second RC extraction that are coupled to the first wire are modified according to the ratio. The second RC extraction is a reduced extraction as compared to the first RC extraction. A timing analysis is performed for the circuit using the second RC extraction with capacitances modified to estimate Miller effect.

The invention discloses a reverse blocking type IGBT and a manufacturing method therefor, and belongs to the technical field of a power semiconductor device. By introducing a floating P type body region on one side of a trench gate and introducing a trench collector structure in a collector region and a field stop layer, the positive breakdown voltage of a device is improved without influencing the threshold voltage and switch-on of an IGBT device; the gate-collector capacitance is lowered, and adverse influence caused by a Miller effect can be relieved; the overall gate capacitance is lowered, the switching speed of the device is improved, the switching loss of the device is lowered, and the compromising relation between forward switch-on voltage drop and switch-off loss of the conventional CSTBT device is improved; the problems of current, voltage oscillation and EMI in the device starting dynamic process can be avoided, and device reliability is improved; the current carrier enhancement effect at the emitter end of the device is improved, the current carrier concentration distribution in a drift region can be improved, and compromising between forward switch-on voltage drop andswitch-off loss can be further improved; and the reverse breakdown voltage of the device is improved, and high forward characteristic of the device is ensured while excellent reverse blocking performance is obtained.

The invention discloses a power amplifier of a distributed two-stack structure considering a miller effect. The power amplifier comprises a distributed two-stack HiFET (High-Impedance, High-Voltage field-effect transistor) amplification network, bias voltage, a grid electrode artificial transmission line considering the miller effect, and a drain electrode artificial transmission line considering the miller effect. According to the power amplifier provided by the invention, a core framework adopts the distributed two-stack HiFET amplification network, which is formed by at least three two-stack HiFET structures; meanwhile, the influence of the miller effect of a two-transistor stack structure on equivalent capacitance of the artificial transmission lines is considered, the accuracy of a circuit design is improved, and the difficulty in later debugging of the circuit is reduced, so that the whole power amplifier acquires a favorable broadband power output capability and a power gain capability, a low breakdown voltage characteristic of an integrated circuit process is avoided, and the stability and the reliability of the circuit are improved.

A voltage regulator may comprise a regulator output configured to provide a regulated voltage, which may be controlled by an error amplifier based on the regulated voltage and a reference voltage. The error amplifier may control a source-follower stage to mirror a multiple of the current flowing in the source-follower stage into an internal pass device. A voltage developed by the mirror current may control an external pass device configured to deliver the load current into the regulator output. A first resistor may be configured to decouple a load capacitor coupled between the regulator output and reference ground, when the load current is below a specified value. A second resistor may be configured to create a bias current in the internal pass device even when the external pass device is close to cut-off region. A third resistor may be configured to counter the effects of negative impedance at the control terminal of the external pass device caused by the current-gain of the external pass device. A compensation capacitor and resistor may be coupled in series between the output of the error amplifier and the output of the voltage regulator to provide frequency compensation for the Miller-Effect.

A high-power, high frequency (1–100 GHz) power amplifier, made using SiGe transistors. A differential common-emitter amplifier section supplies the voltage amplification, allowing the total voltage swing of the amplifier to be twice the breakdown voltage of the individual transistors. Current amplification is supplied by a differential common-emitter amplifier section, connected in cascode with the differential common-emitter amplifier section. Appropriately chosen resonators in the cascode connection resonate out the Miller effect, negative current feed back of the circuit at the amplifier's operational frequency, allowing the amplifier to provide high power output at the operational frequency.

A current reference circuit is disclosed. A small startup current is defined as the base current into a bipolar transistor with its collector-emitter path connected in series with a resistor between the power supply voltage and ground. This startup current is conducted via a diode-connected MOS transistor in a first leg of a current mirror. Temperature compensation is maintained by a reference leg in the current mirror that includes a bipolar transistor having an emitter area N times larger than that of a bipolar transistor in a second leg of the current mirror, to establish a temperature-compensated current in the reference leg. A compensation capacitor connected between the collector and base of a bipolar transistor in the first leg suppresses oscillation, and can be modest in size due to the Miller effect.

The invention discloses a bandwidth extension circuit of a cascode trans-impedance amplifier based on CMOS (complementary metal oxide transistor) technology. The bandwidth extension circuit is of completely bilaterally symmetric structure; each of the left and right parts of the bandwidth extension circuit includes a traditional primary cathode-input amplifier, a novel cascode auxiliary amplifierand a terminal source follower; the novel cascode structure is used herein to assist the amplifiers in shielding Miller effect; the concurrent PMOS (P-channel metal oxide semiconductor) structure provides greater transconductance for the cathode-input NMOS (N-channel metal oxide semiconductor); stray capacitance is partially shielded with a Pi-shaped matching network shielding portion; the terminal source follower is added to isolate stray post-capacitance, and total bandwidth of the circuit herein is increased; the circuit herein helps effectively reduce input impedance via RGC structure, andinput capacitance that is mainly of photoelectric detector junction capacitance is better isolated; the circuit herein gains adjustment and optimization for component parameters; differential structure is utilized so that working bandwidth of the circuit herein is greatly widened.

A device to control the charging rate of an ignition coil for an internal combustion spark ignition engine. The device controls the turn-on rate of the primary coil by slew-rate limiting using switching devices and a Miller-effect capacitor in order to reduce secondary oscillation magnitudes originated by a sharp transition of the controlling switch.

The invention discloses a power amplifier having a distributed three stacking structure and considering miller effect. The power amplifier comprises a distributed three stacking amplification network, a grid artificial transmission line considering the miller effect, a drain artificial transmission line considering the miller effect, a first bias voltage and a second bias voltage. The core architecture of the power amplifier adopts the distributed three stacking amplification network, the distributed three stacking amplification network is composed of at least three transistor stacking structures; meanwhile, influence of the miller effect of the three transistor stacking structures on equivalent capacitance of the artificial transmission lines is considered, circuit design accuracy is improved, and difficulty in later-stage circuit debugging is reduced, so that the whole power amplifier obtains good broadband power output capability and power gain capability, the low breakdown voltage characteristic of an integrated circuit technology is avoided, and circuit stability and reliability are improved.