The present invention provides an epitaxial structure of a near-infrared VCSEL laser, comprising a GaAs substrate, on which a GaAs buffer layer, an N-type doped DBR, an active layer, an oxidation confinement layer, and a P-type doped DBR are sequentially deposited. DBR and ohmic contact layer, the active layer includes a confinement layer, a waveguide layer, a quantum well, a symmetrical waveguide layer and a symmetrical confinement layer from bottom to top, and the quantum well is composed of multiple groups of quantum well layers, and two adjacent groups of quantum wells A thick barrier layer is provided between the well layers, and the thickness of the thick barrier layer is greater than 50nm. The epitaxial structure of the near-infrared VCSEL laser reduces the leakage loss of carriers by inserting multiple thick barrier layers in the quantum wells of the active region, increases the recombination probability of carriers in the active region, and increases the differential gain of the active region , thereby increasing the radiation power of the VCSEL laser, and at the same time increasing the confinement factor of photons in the active region, and improving the response rate of the VCSEL laser.