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465results about "Single-ended push-pull amplifiers" patented technology

Wide bandwidth, current sharing, MOSFET audio power amplifier with multiple feedback loops

A wide bandwidth, multi-FET current sharing output stage, MOS audio power amplifier employs multiple feedback loops. An audio input is supplied to a voltage feedback amplifier stage driving a push-pull voltage gain / phase splitter stage. A bias adjustment stage driven from the push-pull voltage gain / phase splitter stage drives a current drive stage. The current drive stage drives an output stage comprising a plurality of paralleled current shared individual MOS output transistors driving an output nodeconnected to a load. Up to three feedback loops are employed. A first voltage feedback loop comprises a voltage feedback stage having an input connected to a voltage divider driven from the first terminal of the load and an output connected to a feedback input node in the voltage feedback amplifier stage. A second voltage feedback loop comprises a voltage feedback stage having an input connected to the first terminal of the load and an output connected to a feedback input node in the push-pull voltage gain / phase splitter stage. A third feedback loop comprises a current feedback stage having an input in series between the output node and the load and an output connected to a feedback input node in the voltage feedback amplifier stage. The current feedback connection works in conjunction with input stage to lower distortion and provide a relatively flat frequency response.
Owner:BARBETTA ANTHONY T

High-frequency power amplification module and radio communication device

In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.
Owner:RENESAS ELECTRONICS CORP
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