678results about How to "Guaranteed high speed operation" patented technology

An object is to realize high performance and low power consumption in a semiconductor device having an SOI structure. In addition, another object is to provide a semiconductor device having a high performance semiconductor element which is more highly integrated. A semiconductor device is such that a plurality of n-channel field-effect transistors and p-channel field-effect transistors are stacked with an interlayer insulating layer interposed therebetween over a substrate having an insulating surface. By controlling a distortion caused to a semiconductor layer due to an insulating film having a stress, a plane orientation of the semiconductor layer, and a crystal axis in a channel length direction, difference in mobility between the n-channel field-effect transistor and the p-channel field-effect transistor can be reduced, whereby current driving capabilities and response speeds of the n-channel field-effect transistor and the p-channel field-effect can be comparable.

An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layers are located on the same plane.

In a shift register circuit, a defective operation while an output signal is not outputted and a drive capability lowering while the output signal is outputted are prevented. A unit shift register comprises a first transistor for supplying a clock signal inputted to a first clock terminal to an output terminal, and the first transistor is driven by a drive circuit. A second transistor is connected between the gate of the first transistor and the output terminal and has a gate connected to the first clock terminal. The second transistor connects the gate of the first transistor to the output terminal based on the clock signal when the gate of the first transistor is at L (Low) level.

Global Positioning System (GPS) and non GPS position finder, emergency, multiple input multiple output (MIMO), multimode, spread spectrum, code division multiple access (CDMA), Global Mobile System or Global System Mobile (GSM) and orthogonal frequency division multiplex (OFDM) communication systems. Position finder and emergency communication multiple input multiple output (MIMO) system and a receiver having multiple inputs for reception and demodulation of position finder signals to position finder baseband signals. A processor for processing position finder signals with a signal containing an emergency number. A processors for processing signals to provide cross-correlated shaped in-phase and quadrature-phase baseband signals, spread spectrum and OFDM baseband signals. A control unit for control and selection of one of the jointly processed signals and a selector for providing the selected signal to a modulator. A modulator for modulating the selected signal and for connecting the modulated signal to a multiple output signal transmitter for signal transmission. A demodulator connected to the emergency receiver for demodulation of the modulation format selectable (MFS) and bit rate agile (BRA) modulated signal with at least one demodulator filter which has a mis-match with the corresponding filter of the modulator.

An imaging method and system that flexibly accesses light sensor elements and processes imaging signals. The imaging system comprises an array of pixel sensor cells, an array controller and a readout control circuit. The imaging system provides color interpolation.

An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.