Writing control method and writing control system of semiconductor storage device, and portable electronic apparatus
a writing control and writing control technology, applied in the field of semiconductor storage devices, can solve the problems of difficult to realize the reduction in the thickness of the insulating film, difficult to reduce the thickness of the gate insulating film, etc., and achieve the effect of easy realization
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embodiment 1
[0085] [Embodiment 1]
[0086] A semiconductor storage device of the present embodiment includes a memory element 1 as shown in FIG. 1.
[0087] The memory element1 is arranged such that a gate electrode 104 is formed via a gate insulating film 103 on a P-type well region 102 which is formed on the surface of a semiconductor substrate 101. On the upper surface and side surfaces of the gate electrode 104, arranged is a silicon nitride film 109 which is a charge holding film, holding charges at a trap level. The portions of the silicon nitride film 109 on the both side walls serve as memory functional sections 105a and 105b where charges are actually held. Here, the memory functional section indicates a section where charges are actually accumulated by rewriting operation in a memory functioning member or a charge holding film. In the P-type well region 102 on the opposite sides of the gate electrode 104, formed are N-type diffusion regions 107a and 107b which function as source region or ...
embodiment 2
[0106] [Embodiment 2]
[0107] A memory element in a semiconductor storage device of the present embodiment, as shown in FIG. 8, has substantially the same arrangement as that of the memory element 1 in FIG. 1, except for the arrangement in which each memory functioning members 261 and 262 is constituted by a region where charges are held (this region is a region where charges are accumulated and may be a film having a function of holding charges) and a region where charges are less prone to escaping (this region may be a film having a function of making charges less prone to escaping).
[0108] In terms of improvement in holding property of memory, the memory functioning members preferably include an insulating film and a charge holding film capable of holding charges. In the present embodiment, a silicon nitride film 242 having a level of trapping charges is used as a charge holding film, and silicon oxide films 241 and 243 capable of preventing the dissipation of charges accumulated i...
embodiment 3
[0120] [Embodiment 3]
[0121] As shown in FIG. 13, a memory functioning member 262 in the semiconductor storage device of the present embodiment includes a silicon nitride film 242, which is a charge holding film, with substantially uniform film thickness, having a region 281 which is arranged substantially parallel to the surface of the gate insulating film 214 and a region 282 which is arranged substantially parallel to the side surface of the gate electrode 217.
[0122] When a positive voltage is applied to a gate electrode 217, an electric flux line 283, as indicated by arrow, in a memory functioning member 262 passes through the silicon nitride film 242 twice (the region 282 and the region 281). Note that, when a negative voltage is applied to the gate electrode 217, an electric flux line reverses its direction. Here, the silicon nitride film 242 has a relative permittivity of approximately 6, and the silicon oxide films 241 and 243 have a relative permittivity of approximately 4....
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