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214results about How to "Solve the lack of reliability" patented technology
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Semiconductor device and method for manufacturing the same
ActiveUS20100025678A1Comparatively-easy manufacturing processRun at high speedTransistorSolid-state devicesProduction rateOhmic contact
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20100051949A1Small currentHigh on-off ratioTransistorStatic indicating devicesMetallic materialsOxygen deficient
A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semiconductor film may lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.
Owner:SEMICON ENERGY LAB CO LTD
Optical fiber cable and optical fiber ribbon
ActiveUS8548294B2Stable optical loss characteristicReduce warpageFibre mechanical structuresEngineeringBend radius
Owner:NIPPON TELEGRAPH & TELEPHONE CORP
Semiconductor device and method for manufacturing the same
ActiveUS20100032665A1Easy to makeGuaranteed high speed operationTransistorElectroluminescent light sourcesOhmic contactCharge carrier
An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20100025679A1Small currentHigh on-off ratioStatic indicating devicesSolid-state devicesOhmic contactCharge carrier
An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20100032668A1Easy to makeGuaranteed high speed operationTransistorSemiconductor/solid-state device manufacturingCharge carrierOhmic contact
An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20100117073A1Small parasitic capacitanceHigh on-off ratioTransistorElectroluminescent light sourcesIndiumNitrogen
In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.
Owner:SEMICON ENERGY LAB CO LTD
Optical fiber cable and optical fiber ribbon
ActiveUS20110110635A1Stable optical loss characteristicReduce warpageFibre mechanical structuresEngineeringBend radius
Amono-coated optical fiber that has a bending loss characteristic in which an optical loss increase at a bending radius 13 mm is 0.2 dB / 10 turn or less, an optical fiber ribbon that includes two-dimensionally disposed resin portions for bonding the adjacent 2-fiber mono-coated optical fibers in plural places, the resin portions being disposed apart from each other in the longitudinal direction of the optical fiber ribbon and an optical fiber cable that includes a cable core portion that stores twisting of plural units where the mono-coated optical fibers constituting the optical fiber ribbon are collected.
Owner:NIPPON TELEGRAPH & TELEPHONE CORP
Multilayer ceramic capacitor
ActiveUS20170018363A1Solve the lack of reliabilityImprove side strengthFixed capacitor electrodesFixed capacitor dielectricCeramic capacitorMaterials science
A multilayer ceramic capacitor includes a laminated body and first and second external electrodes respectively on both end surfaces of the laminated body. When regions where first internal electrodes or second internal electrodes are not present are regarded as side margin portions in a cross section of the laminated body as viewed from the laminating direction, the side margin portions include multiple side margin layers, and the content of Si in the side margin layer closest to the internal electrode is lower than that in the side margin layer other than the side margin layer closest to the internal electrode.
Owner:MURATA MFG CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20120273780A1Comparatively-easy manufacturing processGuaranteed high speed operationStatic indicating devicesSolid-state devicesPower semiconductor deviceOhmic contact
Owner:SEMICON ENERGY LAB CO LTD
Method for the real-time identification of seizures in an electroencephalogram (EEG) signal
ActiveUS20120101401A1Highly accurate real-time seizure identificationAccurate classificationElectroencephalographyMedical data miningFeature vectorAlgorithm
The present invention relates to a method for the real-time identification of seizures in an Electroencephalogram (EEG) signal. The method provides for patient-independent seizure identification by use of a multi-patient trained generic Support Vector Machine (SVM) classifier. The SVM classifier is operates on a large feature vector combining features from a wide variety of signal processing and analysis techniques. The method operates sufficiently accurately to be suitable for use in a clinical environment. The method may also be combined with additional classifiers, such a Gaussian Mixture Model (GMM) classifier, for improved robustness, and one or more dynamic classifiers such as an SVM using sequential kernels for improved temporal analysis of the EEG signal.
Owner:NATIONAL UNIVERSITY OF IRELAND
Light-emitting device and method for manufacturing the same
InactiveUS20110210355A1Easy to makeSolve the lack of reliabilitySolid-state devicesSemiconductor/solid-state device manufacturingDriver circuitEngineering
An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.
Owner:SEMICON ENERGY LAB CO LTD
Venous needle dislodgement sensor
InactiveUS20060130591A1Sufficiently cost-effectiveSolve the lack of reliabilityForce measurement by measuring optical property variationMedical devicesVeinBiomedical engineering
A dislodgement sensor for use with dialysis and other blood transfusion equipment that detects when a venous needle is dislodged from a patient. The sensor includes a photosensor attached to the venous needle or to tubing attached to the venous needle, an opaque cover placed over but not attached to the photosensor, and a signal line from the photosensor to the equipment. If the venous needle is dislodged, the photosensor is withdrawn from beneath the opaque cover, exposing the photosensor to light, which causes the photosensor to send a signal to the equipment indicating that the venous needle has been dislodged. Also, a method of using such a sensor.
Owner:PERKINS CORBAN ENTERPRISES
Light-emitting device and manufacturing method thereof
ActiveUS20110062434A1Excellent electrical propertiesImprove reliabilityFinal product manufactureSolid-state devicesEngineeringLight emitting device
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
Owner:SEMICON ENERGY LAB CO LTD
Method and device for safeguarding a hazardous area
InactiveUS20050207618A1Solve the lack of reliabilityImage enhancementProgramme-controlled manipulatorForeign matterImage recording
In order to safeguard a hazardous area, in particular the hazardous area of an automatically operating machine, images of the hazardous area are recorded with at least a first and a second image recording unit that are arranged offset from one another. The images of the scene are subjected to three-dimensional scene analyses using different three-dimensional scene analysis methods, and the hazardous area is safeguarded when at least one of the scene analysis methods detects a foreign object.
Owner:PILZ (COMPANY)
Semiconductor device comprising an oxide semiconductor layer
ActiveUS9082857B2Easy to makeGuaranteed high speed operationTransistorStatic indicating devicesMetallic materialsOxygen deficient
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
ActiveUS20070228415A1Suppress from becomingPrevent movementSemiconductor/solid-state device manufacturingSemiconductor devicesSemiconductorMaterials science
A semiconductor device is configured so as to comprise a substrate, an n-type semiconductor layer or an undoped semiconductor layer on the substrate, and an ohmic electrode on the n-type semiconductor layer or the undoped semiconductor layer, and the ohmic electrode is configured so as to comprise a tantalum layer formed on the n-type semiconductor layer or the undoped semiconductor layer, an aluminum layer formed on the tantalum layer, and a metal layer formed on the aluminum layer and made of any one material of tantalum, nickel, palladium, and molybdenum.
Owner:SUMITOMO ELECTRIC DEVICE INNOVATIONS
Light-emitting device and manufacturing method thereof
ActiveUS8377762B2Guaranteed high speed operationEasy to makeFinal product manufactureSolid-state devicesEngineeringLight emitting device
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor element and method for manufacturing the same
ActiveUS20110068336A1Improve reliabilityIncrease computing speedSolid-state devicesSemiconductor/solid-state device manufacturingHydrogen atomCharge carrier
An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.
Owner:SEMICON ENERGY LAB CO LTD
Display device having sealing film
ActiveUS7190115B2Prevent moistureImprove reliabilityDischarge tube luminescnet screensElectroluminescent light sourcesDark spotDisplay device
In order to provide a display device of high reliability in which an amount of moisture and oxygen, which are a factor for deteriorating a characteristics of a display device, entering from a sealing agent is reduced and its manufacturing method, the present invention has a sealing film. Accordingly, an interlayer insulating film including an organic material of the display device (panel) is no longer exposed to the atmosphere outside of the display device. Therefore, it becomes possible to prevent moisture and oxygen outside of the display device from entering inside of the display device through an insulating film and the like including a hygroscopic organic material. In addition, various degradations such as contamination of an inner part of the display device caused by moisture, oxygen and the like, the degradation of electric properties, a dark spot and shrink can be prevented, thus enhancing reliability of the display device.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and manufacturing method thereof
ActiveUS20100065842A1Comparatively-easy manufacturing processRun at high speedTransistorSolid-state devicesIndiumOhmic contact
It is an object of the present invention to provide a thin film transistor in which an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn) is used and contact resistance of a source or a drain electrode layer is reduced, and a manufacturing method thereof. An IGZO layer is provided over the source electrode layer and the drain electrode layer, and source and drain regions having lower oxygen concentration than the IGZO semiconductor layer are intentionally provided between the source and drain electrode layers and the gate insulating layer, so that ohmic contact is made.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS20110115763A1Comparatively-easy manufacturing processRun at high speedTransistorSolid-state devicesProduction rateOhmic contact
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device and method for manufacturing the same
ActiveUS8049225B2Guaranteed high speed operationEasy to makeElectroluminescent light sourcesSolid-state devicesCharge carrierOhmic contact
Owner:SEMICON ENERGY LAB CO LTD
Optical system for collecting distance information within a field
ActiveUS20180167602A1Small enough footprintEasy to processOptical filtersCondensersLength wavePhoton
An optical system for collecting distance information within a field is provided. The optical system may include lenses for collecting photons from a field and may include lenses for distributing photons to a field. The optical system may include lenses that collimate photons passed by an aperture, optical filters that reject normally incident light outside of the operating wavelength, and pixels that detect incident photons. The optical system may further include illumination sources that output photons at an operating wavelength.
Owner:OUSTER INC
Optical system for collecting distance information within a field
ActiveUS10063849B2Small enough footprintReduce manufacturing costOptical filtersCondensersLength wavePhoton
An optical system for collecting distance information within a field is provided. The optical system may include lenses for collecting photons from a field and may include lenses for distributing photons to a field. The optical system may include lenses that collimate photons passed by an aperture, optical filters that reject normally incident light outside of the operating wavelength, and pixels that detect incident photons. The optical system may further include illumination sources that output photons at an operating wavelength.
Owner:OUSTER INC
Method and system for real time judging boundary lines on tennis court
InactiveUS8199199B1Avoid disadvantagesSimple and inexpensiveSki bindingsImage enhancementIntersection of a polyhedron with a lineNear infrared radiation
There is provided a method and a system for registration of real time position of tennis ball relatively to boundary lines on tennis court. The method and system comprise sensitive to near-infrared radiation at least one video camera, outputting video image of court and the method and system further include at least one point source of near-infrared radiation, illuminating tennis court and displaced relatively to the video camera. It is suggested a simple and inexpensive way of determining if a tennis ball bounces in or out of court by determining point of intersection of trajectories of the tennis ball and its shade from near-infrared radiation and comparing the position of the determined point of intersection with previously calibrated boundary lines of court.
Owner:SHLYAK YURIY +1
Organic conductive polymer composition, transparent conductive film, transparent conductor, and input device and process for producing the same
InactiveUS20050267264A1Easy to optimizeImprove conductivityInput/output processes for data processingElectrical conductorConductive polymer
The present invention relates to organic conductive polymer compositions adapted to produce touch panel input devices that hardly undergo resistance degradation even after prolonged and repeated usages, and represent remarkably improved reliability and lifetime in particular. The organic conductive polymer compositions according to the present invention comprise a thiophene derivative polymer, a water-soluble organic compound (except for nitrogen-containing compounds), and a dopant, wherein the thiophene derivative polymer is expressed by the formula (1).
Owner:FUJITSU LTD
Semiconductor device and method for manufacturing the same
ActiveUS20100032667A1Small amount of photocurrentReduce parasitic capacitanceTransistorSemiconductor/solid-state device manufacturingIndiumCharge carrier
One of the objects of the present invention is to provide a thin film transistor using an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn), in which the contact resistance between the oxide semiconductor layer and a source and drain electrodes is reduced, and to provide a method for manufacturing the thin film transistor. An ohmic contact is formed by intentionally providing a buffer layer having a higher carrier concentration than the IGZO semiconductor layer between the IGZO semiconductor layer and the source and drain electrode layers.
Owner:SEMICON ENERGY LAB CO LTD
Light-emitting device and method for manufacturing the same
InactiveUS8502225B2Easy to makeSolve the lack of reliabilitySolid-state devicesDiodeDriver circuitEngineering
Owner:SEMICON ENERGY LAB CO LTD
Sputtering target and method for manufacturing the same, and transistor
InactiveUS20110114999A1Reduce the amount requiredImprove reliabilityTransistorCellsHydrogen atomHydrogen
Owner:SEMICON ENERGY LAB CO LTD
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