2660results about How to "Reduce warpage" patented technology

Amono-coated optical fiber that has a bending loss characteristic in which an optical loss increase at a bending radius 13 mm is 0.2 dB/10 turn or less, an optical fiber ribbon that includes two-dimensionally disposed resin portions for bonding the adjacent 2-fiber mono-coated optical fibers in plural places, the resin portions being disposed apart from each other in the longitudinal direction of the optical fiber ribbon and an optical fiber cable that includes a cable core portion that stores twisting of plural units where the mono-coated optical fibers constituting the optical fiber ribbon are collected.

The invention discloses a fast manufacturing method of three-beam laser compound scanning. The method comprises the following steps of: firstly utilizing long-wavelength laser (CO2 laser) for preheating the metal powder, then utilizing short-wavelength laser (YAG or optical fiber laser) for fusing the metal powder and finally utilizing long-wavelength laser (CO2 laser) to carry out heat treatment to the frozen metal. The fast manufacturing method uses the three beams of laser to carry out compound scanning, namely uses long-wavelength laser to preheat, short-wavelength laser to fuse and then long-wavelength laser to carry out heat treatment, can realize the compound process of preheating, fusion and heat treatment of the metal powder. The three beams of laser compound scanning mode can reduce internal stress of the metal part, avoid warping and cracking, improve organization and improve performance.

A method of forming a stack of thin wafers provides a wafer level stack to greatly reduce process time compared to a method where individually separated chips are stacked after a wafer is sawed. A rigid planar wafer support member stabilizes and planarizes each wafer while it is thin or its thickness is reduced and during subsequent wafer processing. Thinned wafers are stacked and the external support members are removed by applying heat or ultraviolet (UV) light to an expandable adhesive layer between the support members and the thin wafers. The stacked wafers then can be further processed and packaged without thin-wafer warping, cracking or breaking. A wafer level package made in accordance with the invented method also is disclosed.

A semiconductor device has a temporary carrier with a designated area for a first semiconductor die. A dam material is deposited on the carrier around the designated area for a first semiconductor die. The first semiconductor die is mounted to the designated area on the carrier. An encapsulant is deposited over the first semiconductor die and carrier. The dam material is selected to have a CTE that is equal to or less than the CTE of the encapsulant. The carrier is removed to expose the encapsulant and first semiconductor die. A first interconnect structure is formed over the encapsulant. An EMI shielding layer can be formed over the first semiconductor die. A second interconnect structure is formed over a back surface of the first semiconductor die. A conductive pillar is formed between the first and second interconnect structures. A second semiconductor die is mounted to the second interconnect structure.

A low-EMI circuit which realizes a high mounting density by converting the potential fluctuation of a power supply layer with respect to a ground layer which occurs on switching an IC device etc., into Joule's heat in the substrate without using any parts as a countermeasure against the EMI. Its structure, a circuit board using it, and a method of manufacturing the circuit board are also disclosed. Parallel plate lines in which the Q-value of the stray capacitance between solid layers viewed from the power supply layer and ground layer is equivalently reduced and which are matchedly terminated by forming a structure in which a resistor (resistor layer) and another ground layer are provided in addition to the power supply layer and the ground layer on a multilayered circuit board. A closed shield structure is also disclosed. This invention can remarkably suppress unwanted radiation by absorbing the potential fluctuation (resonance) which occurs in a power supply loop by equivalently reducing the Q-value of the stray capacitance, absorbing the standing wave by the parallel plate lines matchedly terminated and, closing and shielding the parallel plate lines.

The invention relates to a PET glass fiber reinforced composite material, which has the following components based on weight proportion: 100 portions of PET, 10-45 portions of alkali-free glass fibers, 5.0-25 portions of toughener, 0.1-10 portions of crystallization promoter, 0.1-1.0 portion of chain extender, 0.5-5.0 portions of nucleating agent, 0.1-0.5 portion of antioxidant and 0.3-0.5 portion of lubricant. The preparation method is that the components are evenly mixed on a high-speed mixer and melted and blended by a twin-screw extruder to prepare the composite material. The composite material has the advantages of good mobility, high tensile strength and high impact strength, which aims to realize low-cost and high-quality PET engineering plastic scale production to effectively substitute for high-grade plastics and expensive imported special materials.

A main semiconductor region of semiconducting nitrides is formed on a silicon substrate via a buffer region of semiconducting nitrides to provide devices such as HEMTs, MESFETs and LEDs. In order to render the wafer proof against warping, the buffer region is divided into a first and a second multilayered buffer subregion. The first buffer subregion comprises multiple alterations of a multi-sublayered first buffer layer and a non-sublayered second buffer layer. Each multi-sublayered first buffer layer of the first buffer subregion comprises multiple alternations of a first and a second buffer sublayer. The second buffer sublayers of each multi-sublayered first buffer layer either do not contain aluminum or do contain it in a higher proportion than do the first buffer sublayers. The second multilayered buffer subregion comprises multiple alternations of a first and a second buffer layer. The first buffer layers of the second multilayered buffer subregion are less in aluminum proportion than the fourth buffer layers of the second multilayered buffer subregion.

In one embodiment of the present invention, there is provided a semiconductor device including a first semiconductor element mounted, through flip-chip bonding, on the element mounting surface of a first wiring substrate, and a resin layer that coats substantially the entire element mounting surface of the first wiring substrate. The first semiconductor element has two opposite surfaces. One surface faces the element mounting surface of the first wiring substrate, and the other surface is not coated by the resin layer.

In an electronic device having multilayer resin interconnection layers, it is desired to reduce the warp of its support substrate. It is manufactured by: forming a lower layer including a via and a first insulating part on the support substrate; and forming an intermediate layer including a first interconnection and a second insulating part covering the first interconnection on the lower layer. The lower layer is formed by: forming the first insulating part on a first circuit region and a first region surrounding it; and forming the via on the first circuit region. The intermediate layer is formed by: forming the first interconnection on the first circuit region; forming a film of the second insulation part to cover the lower layer; and removing the second insulating part on the first region such that an outer circumferential part of an upper surface of the lower layer part is exposed.

The invention relates to a back surface field aluminium paste for solar cells. The aluminium paste comprises the following components in parts by weight: 65-80 parts of aluminium powder, 1-5 parts of inorganic adhesive, 10-30 parts of organic carrier and 1-2 parts of modifier. Sintered films with lower warpage can be obtained through the back surface field aluminium paste.

The invention discloses a thermoplastic light compound plate and the manufacturing method, characterized in that it comprises acupuncture fiber carpet dipped in double faced foam of thermoplastic glue liquid and thermoplastic glue liquid layer coated on the surface, the density of compound plate is 0.35-0.90g/cm3, the weight of fiber scattered in bunchiness is 15-45% of acupuncture fiber carpet. The merit of invention is very remarkable. Special super long fiber and bunchiness fiber with certain proportion are maintained in the material so that the mechanical performance of material can be improved. In addition, the material is provided with foam structure, very good effect of heat and sound insulation. The invention is also provided with environmental protection and recovery.

The invention provides a method for improving silicon carbide single chip flatness and crystal surfaces by using wet etching. By cleaning, preheating and oxygen-blowing etching silicon carbide single crystal and the like, the method removes dot, line and surface defects on the surfaces of the silicon carbide single crystal and furthest eliminates defects, stress and damaged layers on the surfaces of wafers to a maximum extent, so that the flatness of the silicon carbide wafers can be adjusted to the following parameters: Warp is less than 15mum, absolute Bow is less than 15mum and, and finally the single crystal silicon carbide wafers with high qualities are obtained.

A method for producing a material includes providing a metallurgical powder including iron, 1.0 to 3.5 weight percent copper, and 0.3 to 0.8 weight percent carbon. At least a portion of the powder is compressed at 20 tsi to 70 tsi to provide a compact, and subsequently the compact is heated at high temperature and then cooled at a cooling rate no greater than 60° F. per minute to increase the surface hardness of the compact to no greater than RC 25. The density of at least a region of the sintered compact is increased, by a mechanical working step or otherwise, to at least 7.6 grams/cc. The sintered compact is then re-heated to high temperature and cooled at a cooling rate of at least 120° F./min. so as to increase the surface hardness of the compact to greater than RC 25, and preferably at least RC 30. Material made by the method of the invention also is disclosed.

The process of rolling to form aluminum alloy ring with rectangular cross section includes the following steps: sawing aluminum alloy rod into section; making ring blank via homogeneous heating from room temperature to the heat deforming temperature of 350-550 deg.c, upsetting, punching hole and punching coating; rolling the blank heated in a heating furnace to 350-550 deg.c via radial or radial-axial rolling inside groove; and cutting mechanically into the product. The present invention has the features of low cost and high production efficiency.

The invention relates to the technical field of the display and provides a flexible display device and a sliding and rolling method thereof. The flexible display device comprises a shell, a flexible display panel, a fixed supporting piece, a sliding scroll and a support piece, wherein the flexible display panel is provided with a first end and a second end which are oppositely arranged; the fixedsupporting piece is fixedly connected with the first end of the flexible display panel, is used for supporting the first end of the flexible display panel and is movably connected to the shell; the flexible display panel is arranged on the sliding scroll in a rolling manner and is rotatably arranged in the shell; the supporting piece is arranged on the sliding scroll in a rolling mode and locatedbetween the sliding scroll and the flexible display panel, one end of the supporting piece is fixedly connected with the sliding scroll, the other opposite end of the supporting piece is fixedly connected with the fixed supporting piece, and the supporting piece is used for supporting the flexible display panel when the flexible display panel is unfolded. When the flexible display panel is used bya user, the flexible display panel is not prone to damage, poor display is avoided, the poor touch of the area in the using process is avoided, and the warping amount of the flexible display panel can be reduced.

A circuit board including conductive layers bonded to both surfaces of an insulating ceramic substrate, with a brazing material disposed therebetween. The conductive layers comprise at least 99.98% by mass of aluminum, and display an average crystal grain diameter within a range from 0.5 mm to 5 mm and a standard deviation σ for that crystal grain diameter of no more than 2 mm. Each conductive layer comprises at least 20 ppm of Cu, Fe and Si. The surface area of the crystal with the maximum crystal grain diameter within the conductive layers accounts for no more than 15% of the surface area of the insulating ceramic substrate.