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664results about How to "Fast manufacturing" patented technology

Method for preparing solar cell by using local area back field

The invention discloses a method for preparing a solar cell by using a local area back field, which comprises the following steps of: selecting a silicon chip and making the silicon chip into a soft silicon chip, then performing boron or phosphorus dispersion, cleaning a boron-silicon glass layer or a phosphorus-silicon glass layer left on the surface of the silicon chip after the dispersion, depositing a silicon nitride film on the front of the silicon chip by using PECVD, polishing the back of the silicon chip by using hot alkali liquid, and depositing a passive film, performing laser perforation and sputtering an aluminum layer on the polished back; and finally, screen-printing a silver electrode on the front of the silicon chip, and sintering, testing and separating the silicon chip. The method avoids the problem of current leakage caused by lamination during etching; the PECVD process adopted by the passive film on the back is more suitable for large-scale production; the adoption of the back laser perforation improves the manufacturing speed, reduces the process step and avoids pollution brought by corrosive slurry; and the Al layer can be well sintered and contacted with the silicon through pores so that the contact area of the metal and the back surface silicon is smaller and the current carrier compounding rate of the back surface is reduced.
Owner:JA SOLAR TECH YANGZHOU

Pattern transfer method and apparatus, flexible display panel, flexible solar cell, electronic book, thin film transistor, electromagnetic-shielding sheet, and flexible printed circuit board applying thereof

The present invention relates to methods and apparatuses for transferring pattern, a flexible display panel, a flexible solar cell, an electronic book, a thin film transistor, an electromagnetic-shielding sheet, and a flexible printed circuit board applying thereof. A pattern transfer method related to the present invention comprises: a first step of forming a transfer material layer on a substrate; a second step of hardening the transfer material layer in the solid state; a third step of patterning the transfer material layer by irradiating a laser beam to the hardened transfer material layer in the solid state; and a fourth step of pressing the patterned transfer material layer in the solid state and a flexible substrate facing each other and transferring the transfer material layer to the flexible substrate by a viscous force of the flexible substrate occurring in a facing part between the transfer material layer and the flexible substrate by irradiating the laser beam from the transfer material layer to the flexible substrate or from the flexible substrate to the transfer material layer.
Owner:KOREA ADVANCED INST OF SCI & TECH

Refrigerating machine room assembly type construction method based on a BIM technology

A refrigerating machine room assembly type construction method based on a BIM technology comprises four stages, namely a deepening design stage, a prefabrication machining stage, a transportation stage and a field assembly stage. According to the method, a designed construction drawing is combined with a construction site, electromechanical professions are comprehensively planned, civil engineering, curtain walls, decoration and other acceptance units are connected, and the problem of serious difficulty in construction and key areas are pre-judged. The method has the advantages that on-site construction is guided, engineering quality is improved, guarantee is provided for engineering progress, project cost is saved, completion data is input into the building information model finally, system maintenance and use during project operation are facilitated, and expected functions of buildings are achieved finally and added value is increased. Compared with a traditional refrigerator room construction method, the construction method adopting the prefabricated assembly refrigerator room has remarkable advancement and advantages in the aspects of construction period, quality, safety, manufacturing cost and other technical and economic effects.
Owner:THE FIRST CONSTR ENG COMPANY LTD OF CHINA CONSTR SECOND ENG BUREAU

Binary optica device grey scale changing mask method and device for making

The invention relates to a variable-gradation mask making method of binary optical devices, and its character: it connects a space optical modulator able to display gradation pictures with a computer through a video driver, uses the computer to control and input video signals, then vertically irradiates the electric-addressing space optical modulator by light beams, images gradation images displayed on the optical modulator on a photosensitive printing plate on a 2D displacement platform through finely zooming objective, exposes pictures on the photosensitive printing plate one by one by moving the platform, then taking the working procedures of developing, etc to complete making the gradation mask. The making device: a photosensitive printing plate is arranged on the 2D displacement platform, the finely zooming objective able to receive incident light beams is situated between the space optical modulator and a shutter, the shutter is situated above the photosensitive printing plate or the objective, and the space optical modulator is connected with the computer through the video driver. It has a concurrent character, able to largely increase speed and precision of making gradation masks and reducing production cost.
Owner:NAT UNIV OF DEFENSE TECH

Thin film crystalline silicon perovskite heterojunction solar battery and preparation method thereof

ActiveCN105226187AOvercome the disadvantage of low light absorption coefficientReduce compoundingSolid-state devicesSemiconductor/solid-state device manufacturingHeterojunctionHole transport layer
The invention relates to a thin film crystalline silicon perovskite heterojunction solar battery and a preparation method thereof, and relates to a semiconductor device for converting luminous energy into electric energy. The thin film crystalline silicon perovskite heterojunction solar battery includes a transparent conductive substrate, a P-type thin film crystalline silicon hole transport layer, a perovskite light absorption layer, an electron transport layer formed by compact titanium dioxide, and a back electrode, wherein the perovskite light absorption layer and the P-type thin film crystalline silicon hole transport layer have matched energy levels. The configuration pattern: the P-type thin film crystalline silicon hole transport layer is arranged on the transparent conductive substrate; the perovskite light absorption layer is arranged on the P-type thin film crystalline silicon hole transport layer; the perovskite light absorption layer and the P-type thin film crystalline silicon hole transport layer form a thin film crystalline silicon perovskite heterojunction; the electron transport layer formed by the compact titanium dioxide is arranged on the perovskite light absorption layer; the back electrode is arranged on the electron transport layer formed by the compact titanium dioxide. According to the invention, the defects that the existing perovskite solar battery is low in stability and high in preparation cost, and a mass of silicon materials are used can be overcame.
Owner:HEBEI UNIV OF TECH

Preparation of nano zirconium diboride ceramic powder

The invention relates to a preparation method for nano zirconium diboride ceramic powder, which is characterized by comprising the following steps: 1) selecting materials: selecting according to a mol ratio of 1 : 3 to 1 : 5 between Zr and amorphous boron powder in soluble zirconium salt; 2) selecting one of the two methods as follows: a) using a coprecipitation method for gel forming to obtain xerogel; b) using a sol-gel method for gel forming to form the xerogel; 3) preparing precursor powder; 4) synthesizing quickly: arranging the materials into a large current reaction synthesizer; the inside of a black lead reactor is protected by vacuum or insert gases; applying a large current directly on the black lead reactor, quickly heating to 800 and 1500 DEG C at the temperature rising speed of 50 to 500 DEG C/min, preserving the temperature for 0 to 60 minutes to obtain a powder sample; and 5) chemical processing for obtaining the nano zirconium diboride ceramic powder. The method has the characteristics of quick synthesizing speed and high efficiency; the purity of the obtained nano zirconium diboride ceramic powder is high (equal to or more than 95 percent); and the grain diameters of the obtained nano zirconium diboride ceramic powder are uniform and thin(the average grain diameter is equal to or less than 300nm).
Owner:WUHAN UNIV OF TECH
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