The invention relates to a method for separating a plurality of
semiconductor material wafers from workpieces during a number of
wafer separation operations for an associated workpiece
separation process per workpiece by means of a
wire saw comprising a wire gate of moving wire sections of a saw wire stretched between two wire guide rollers, wherein each of the wire guide rollers is mounted between a
fixed bearing and a floating bearing, comprising the step of carrying out the
wafer separation operations of the current workpiece
separation process on the current workpiece by temperature-controlling the
fixed bearing of the respective wire guide roller during the current workpiece
separation process according to a previously determined WGTC
temperature curve within the method, which was determined on the basis of a weighted determination of historical data from past workpiece separation processes.wherein, in each of the disc
cutting operations, sawing is carried out in a
cutting area of the workpiece at a substantially constant
cutting speed within the range of 2000 µm / min to 3000 µm / min. The invention further relates to a disc made of
semiconductor material, which is produced in particular by the sawing method according to the invention, wherein the disc has a TTV value in the range of 6.0 µm to 58.5 µm, preferably in the range of 10.8 µm to 30.5 µm, and more preferably in the range of 12.9 µm to 25.6 µm.