19247results about "Edge grinding machines" patented technology

Exemplary apparatus for obtaining information for a structure can be provided. For example, the exemplary apparatus can include at least one first optical fiber arrangement which is configured to transceive at least one first electromagnetic radiation, and can include at least one fiber. The exemplary apparatus can also include at least one second focusing arrangement in optical communication with the optical fiber arrangement. The second arrangement can be configured to focus and provide there through the first electromagnetic radiation. Further, the exemplary apparatus can include at least one third dispersive arrangement which is configured to receive a particular radiation which is the first electromagnetic radiation and/or the focused electromagnetic radiation, and forward a dispersed radiation thereof to at least one section of the structure. At least one end of the fiber can be directly connected to the second focusing arrangement and/or the third dispersive arrangement. In addition, an exemplary embodiment of a method for producing an optical arrangement can be provided. For example, a first set of optical elements having a first size in a first configuration and a second set of optical elements in cooperation with the second set and having a second size in a second configuration can be provided. The first and second sets can be clamped into a third set of optical elements. The third set can be polished, and a further set of optical elements may be deposited on the polished set.

The present invention provides a wafer carrier that includes a plurality of concentric sealing members that provide a seal, with the outer seal independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier, and a plurality of vacuum openings that a re disposed only adjacent to an inner side of the inner seal at a location corresponding to the backside periphery of the wafer.

A structure and method for polishing a device include oscillating a carrier over an abrasive surface (the carrier bringing a polished surface of the device into contact with the abrasive surface, the oscillating allowing a portion of the polished surface to periodically oscillate off the abrasive surface), optically determining a reflective measure of a plurality of locations of the polished surface as the portion of the device oscillates off the abrasive surface and calculating depths of the locations of the polished surface based of the reflective measure.

The invention relates to an ornament grinding and burnishing machine, in particular to an automatic-circulating dual-clamp ornament grinding and burnishing machine. The invention designs the automatic-circulating dual-clamp ornament grinding and burnishing machine with high efficiency, high integrated degree and high automatic degree, which mainly aims at overcoming the defects of low automatic degree and low efficiency of clamp switching in the prior art. The invention has the main technical scheme that the automatic-circulating dual-clamp ornament grinding and burnishing machine comprises a stand, wherein a feeding and discharging work part, at least one group of front grinding work part, at least one group of front burnishing work part, a switching work part, at least one group of rear grinding work part and at least one group of rear burnishing work part are sequentially arranged on the stand; and a manipulator work part is arranged in the middle of the stand.

A sharpener includes a motor driven shaft with at least one slidably mounted sharpening assembly consisting of a supporting hub structure mounted by its central bore hole on the shaft. The hub structure supports a symmetrically shaped rotating surface containing an ultra fine abrasive material. The rotating surface is pressed with a force of less than 0.2 lb. by a spring action to make sustained rotating abrading contact with a facet of a knife positioned by a knife guide to align the facet into contact with the surface containing the abrasive materials.

A single-use grinding tool includes a wheel portion having a profiled recess (e.g., such as a U, V, or bowl shape) extending circumferentially along the wheel portion's periphery. A multi-layered bonded abrasive (e.g., 3-dimensional matrix of abrasive grains and bond material, or multiple layers of abrasive tape) is conformably coated or otherwise applied in a uniform thickness along the profiled recess. The bonded abrasive in one particular case includes a metal bond with diamonds. However, organic, resinous, vitrified, and hybrid bonds, as well as other abrasive grit types, can be used. The wheel portion is supported by an arbor portion which may be removably coupled to the wheel portion, or formed integrally with the wheel portion. The tool is useful, for example, in edge grinding a workpiece, such as sheet glass. Methods of tool use and tool manufacture are disclosed as well.

Unitary finishing elements having discrete finishing members fixedly attached to unitary resilient body are disclosed for finishing semiconductor wafers. The discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements can reduce unwanted surface defect creation on the semiconductor wafers during finishing.

In order to omit a lapping process or a double disk grinding process by performing slicing operation so as not to generate long period waviness on the surface of the wafer in a slicing process and by completely removing short period waviness remaining in the surface of the sliced wafer during a polishing process, there is provided a manufacturing method includes a slicing process of slicing a work of the semiconductor wafer by reciprocating a wire of a wire saw at constant cycles of 3 or more and less than 8 per a minute a grinding process of grinding both sides of the sliced wafer by a grinding wheel, one-side by one-side and a polishing process of performing a chemical mechanical polishing on both sides of the ground wafer by a fixed abrasive grain polishing cloth, in which an abrasive grain is fixed, and a abrasive containing no abrasive grains.

Apparatus, systems and methods for forming complex edges on a glass member through the use of a glass slumping process are disclosed. According to one aspect of the invention, a method of forming a complex edge in a glass forming process includes grinding an edge of a glass member and polishing the edge of the glass member. Grinding the edge of the glass member causes the edge of the glass member to have a first level of complexity. The method also includes performing a slumping process on the glass member. Performing the slumping process causes the edge of the glass member to have a second level of complexity that is more complex than the first level of complexity.

An apparatus for simultaneously polishing wafers including at least a first and a second web of polishing media. At least two polishing heads are provided on a carrier coupled to a drive system such that one polishing head positions a wafer against the first web and a second polishing head positions a second wafer against the second web. The drive system imparts a programmed polishing motion or pattern to the polishing heads.

A method and apparatus is provided for cleaning and shaping a probe tip using a multi-layer adhesive and abrasive pad. The multi-layer adhesive and abrasive pad is constructed on the surface of a support structure, such as a silicon wafer, and is made of an adhesive in contact with abrasive particles. Adhesive is applied in layers with abrasive particles in-between each layer of adhesive. Abrasive particles may vary in size and material from layer to layer to achieve cleaning, shaping and polishing objectives.

A method of making and the resulting non-metallic CMP conditioning pad comprising a non-metallic substrate and a single layer of abrasive particles bonded to the substrate by a non-metallic bonding medium. Preferred substrates include aluminum oxide and graphite. A bonding system employing finely powdered aluminum oxide particles mixed with a suitable adhesive is employed to bond the abrasive layer to the aluminum oxide substrate. Silicon carbide particles mixed into a compatible adhesive carrier including a polymer composition is preferred for bonding the abrasive particle layer to a graphite or carbide substrate.

The invention discloses an automatic grinding and polishing system for crystal blanks. The automatic grinding and polishing system comprises a first left-right transfer mechanism and a second left-right transfer mechanism, feeding and discharging stations, a plurality of upper hemispherical grinding and polishing stations and butting stations are sequentially arranged from left to right along the first left-right transfer mechanism, butting stations, a plurality of lower hemispherical grinding and polishing stations and feeding and discharging stations are sequentially arranged from right to left along the second left-right transfer mechanism, feeding and discharging machines are arranged on the feeding and discharging stations, grinding and polishing machines are arranged on the grinding and polishing stations, butting machines are arranged on the butting stations, each left-right transfer mechanism comprises a plurality of transfer manipulators and a rail linearly extending left and right, the feeding and discharging machines, the grinding and polishing machines and clamp holders for mounting clamps on the butting machines are arranged in a left-right rowed manner along the length direction of the clamps, and the transfer manipulators push the clamps to slide between the left-right adjacent clamp holders along the length direction of the clamps. By the aid of the technical scheme, the automatic grinding and polishing system is more reasonable in structure, simpler in action, lower in cost, more reliable in operation and higher in efficiency.

Prior to the polishing of the wafer 4, a reflective body which has the same shape and dimensions as the wafer 4 is held on the polishing head 2 instead of the wafer 4. A polishing agent 5 is interposed between the window 15 of the polishing head 13 and the reflective body, and the reflective body is pressed against the polishing pad 13 with the same pressure as that applied during the polishing of the wafer 4. In this state, the reflective body is irradiated via the window 15 with a probe light emitted from the light source 31, and the spectroscopic intensity of the reflected light is obtained from the sensor 43 as a reference spectrum. During the polishing of the wafer 4, the spectroscopic intensity of the reflected light from the wafer 4 is successively obtained as measured spectra from sensor 43; the intensity ratio of these measured spectra to the above-mentioned reference spectrum is determined, and the polishing state of the wafer 4 is monitored on the basis of this intensity ratio.

A laminate panel with a beveled edge in the clear covering over the decorative layer. The bevel in the clear covering is produced by heating a roller and bringing it into operable contact with the clear covering adjacent the edge of the laminate panel. The heated roller melts the clear covering and produces the bevel as the laminate panel is moved past the roller while the roller rotates about its axis.

There are disclosed a polishing method and a polishing device in which cleaning of a glass substrate surface can be achieved to a high level. A glass substrate (MD substrate 1) in the shape of a circular disc having a circular hole in a center portion is immersed in an abrasive liquid 50 containing free abrasive grains, and an inner peripheral end surface of the glass substrate is polished using the abrasive liquid containing the free abrasive grains by rotating a rotary brush 4 or a polishing pad in contact with the inner peripheral end surface.

In order to measure a thickness of a surface to be polished of a material to be polished for a short time, two-dimensional images are obtained from a light reflected from the surface to be polished of the material to be polished, a location at which a thickness is to be observed is specified by the obtained two-dimensional images, and thickness measurement is carried out.