2947results about "Work carriers" patented technology

Methods for manufacturing silicon carbide wafers having superior specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR). The resulting SiC wafer has a mirror-like surface that is fit for epitaxial deposition of SiC. The specifications for bow, warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least squares focal plane range (SFQR) of the wafer are preserved following the addition of the epitaxy layer.

Methods are provided for controlling adjustable pressure zones of a CMP carrier. A method comprises determining a first thickness of a layer on a wafer underlying a first zone of the carrier. A first portion of the layer underlying the first zone is removed. The first zone is configured to exert a first pressure against the second surface of the wafer. A second thickness of the layer underlying the first zone is determined and a target thickness corresponding to a predetermined thickness profile is selected. A second pressure for the first zone is calculated using the first thickness, the second thickness, the first pressure, and the target thickness. The pressure exerted by the first zone against the second surface of the wafer is adjusted to the second pressure and the steps are repeated for a second zone.

Polishing apparatus and related methods employ aligned first and second magnetic field sources to adjust the compressive force and / or pressure applied by a carrier head against a target workpiece (such as a wafer) by selectively and controllably generating a repellant or attractive force between the two magnetic field sources.

The present invention provides a wafer carrier that includes a plurality of concentric sealing members that provide a seal, with the outer seal independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier, and a plurality of vacuum openings that a re disposed only adjacent to an inner side of the inner seal at a location corresponding to the backside periphery of the wafer.

An apparatus for supporting a stationary or moving substantially flat object without physical contact on an fluid-cushion. The object floats on a fluid cushion gap, the apparatus aimed for globally or locally adjusting the gap. The apparatus comprising: a first platform for supporting the object without contact, the platform having a substantially flat active surface comprised of one or more sectors, each sector comprising at least one of a plurality of basic cells, each basic cell having at least one of a plurality of pressure outlets fluidically connected through a pressure flow restrictors to a higher-pressure manifold associated with the sector in which the basic cell lies, the higher-pressure manifold is fluidically connected through main supply pipeline to pressurized fluid supply and at least one of a plurality of fluid-evacuation channels fluidically connected to a lower-pressure manifold associated with the sector in which the basic cell lies having main evacuation pipeline; wherein the flow restrictor characteristically exhibiting fluidic return spring behavior; and wherein at least one pressure control valve is interposed with at least one of the two main pipelines of at least one sector for controlling pressure levels of at least one of the two manifolds of that sector.

A lapping guide system and method for lapping a merged read / write head are disclosed. The resistance RRE of a first ELG near the sensor in the read head is correlated to the resistance RWE of a second ELG and to the width of a first optical lapping guide (OLG) near the neck region of the write head. As the lapping progresses, RWE and RRE increase and the OLG width along the lapping plane increases. Thus, an OLG width and a RWE corresponding to a target neck height or throat height and a RRE corresponding to a target stripe height are determined. A lapping plane is actively tilted to enable write head dimensions to be independently controlled on a per wafer or per row basis. The first OLG is a triangular feature with one side parallel to the lapping plane and the other two sides converging near the lapping plane.

An apparatus for supporting a stationary or moving substantially flat object without physical contact on an fluid-cushion. The object floats on a fluid cushion gap, the apparatus aimed for globally or locally adjusting the gap. The apparatus comprising: a first platform for supporting the object without contact, the platform having a substantially flat active surface comprised of one or more sectors, each sector comprising at least one of a plurality of basic cells, each basic cell having at least one of a plurality of pressure outlets fluidically connected through a pressure flow restrictors to a higher-pressure manifold associated with the sector in which the basic cell lies, the higher-pressure manifold is fluidically connected through main supply pipeline to pressurized fluid supply and at least one of a plurality of fluid-evacuation channels fluidically connected to a lower-pressure manifold associated with the sector in which the basic cell lies having main evacuation pipeline; wherein the flow restrictor characteristically exhibiting fluidic return spring behavior; and wherein at least one pressure control valve is interposed with at least one of the two main pipelines of at least one sector for controlling pressure levels of at least one of the two manifolds of that sector.

An apparatus for simultaneously polishing wafers including at least a first and a second web of polishing media. At least two polishing heads are provided on a carrier coupled to a drive system such that one polishing head positions a wafer against the first web and a second polishing head positions a second wafer against the second web. The drive system imparts a programmed polishing motion or pattern to the polishing heads.

A carrier head for chemical mechanical polishing of a substrate has a base and a retaining ring positioned beneath the base. The retaining ring includes a main portion with a first surface to apply a load to a perimeter portion of the back surface of the substrate and an annular projection with a second surface to retain the substrate. A bottom surface of the projection is separated from a top surface of a polishing pad by a gap.

A polishing apparatus (1) has a polishing pad (22), a top ring (20) for holding a semiconductor wafer (W), a vertical movement mechanism (24) operable to move the top ring (20) in a vertical direction, a distance measuring sensor (46) operable to detect a position of the top ring (20) when a lower surface of the top ring (20) is brought into contact with the polishing pad (22), and a controller (47) operable to calculate an optimal position of the top ring (20) to polish the semiconductor wafer (W) based on the position detected by the distance measuring sensor (46). The vertical movement mechanism (24) includes a ball screw mechanism (30, 32, 38, 42) operable to move the top ring (20) to the optimal position.

An apparatus for planarizing a work piece includes an easily assembled work carrier. The carrier includes a carrier insert having a work piece bladder clamped to a carrier backing plate with a plurality of clamps to form a plurality of web plenums. The outer edge of the bladder is supported by a rib that is coupled to a carrier plenum. By adjusting the pressure in the carrier plenum, the pressure exerted on the edge of a work piece during a planarization operation can be adjusted. The carrier also includes a floating wear ring that surrounds the work piece bladder and a work piece mounted on that bladder. By adjusting the force exerted by the wear ring on a polishing pad, independently of the pressure exerted by the rib at the edge of the bladder, the material removal rate near the edge of the work piece can be controlled.

An object of the present invention is to provide a semiconductor wafer having a front and a back surfaces polished so as to have different glossiness from each other, yet with a lower cost. The glossiness of the front surface and the back surface can be selected arbitrarily. In a double-sided polisher with no sun gear, silicon wafers W are inserted in respective holding holes 11a of a carrier plate 11. The wafers W are placed with their back surfaces facing up. An expanded urethane foam pad 14 is pressed against the back surfaces of the wafers W and a non-woven fabric pad 15 is pressed against the front surfaces of the wafers W. A carrier holder 20 and thus the carrier plate 11 are then driven to make a circular motion associated with no rotation on their own axes within a horizontal plane while supplying a slurry to the wafers W from an upper surface plate 12 side. As a result, each of the front and the back surfaces of respective silicon wafers W can be polished uniformly over entire area thereof respectively. At that time, the urethane pad 14 has a sink rate of the wafer lower than that of the non-woven fabric pad 15. Therefore, such a polished wafer having the back surface formed into a satin-finished surface and the front surface formed into a mirror-finished surface can be obtained. Alternatively, those polishing cloths having different sink rates from each other may be employed for the upper and the lower surface plates, respectively. Further, the upper surface plate and the lower surface plate may be rotated at different speeds from each other. Those methods are also advantageously used to manufacture the semiconductor wafer having different glossiness between the front surface and the back surface thereof.

A carrier and a polishing apparatus are designed to improve the mass producibility of wafers while using a retainer ring formed by a soft material. A rubber sheet 4 is bonded to the bottom surface of a carrier body 2 of the carrier 1 to define a pressure chamber R, a retainer ring 13 formed by a soft material such as EG is bonded to the bottom surface of the sheet 4. A margin block 40 is provided projecting out from the bottom side of the sheet 4, and the thickness of the retainer ring 13 is set to be substantially equal to the sum of the thickness L1 of the margin block 40 and the thickness L2 of the wafer W.

Simultaneous double-side grinding of a plurality of semiconductor wafers involves positioning each wafer freely in a cutout of one of plural carriers which rotate on a cycloidal trajectory, wherein the wafers are machined between two rotating ring-shaped working disks, each disk having a working layer of bonded abrasive, wherein the form of the working gap between working layers is determined during grinding and the form of the working area of at least one disk is altered such that the gap has a predetermined form. The wafers, during machining, may temporarily overhang the gap. The carrier is optionally composed only of a first material, or is completely or partly coated with the first material such that during machining only the first material contacts the working layer, and the first material does not reduce the machining ability of the working layer.

A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.

A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating / cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling / heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess. The substrate holder of the invention provides direct heat / cool-exchange between the heating / cooling medium and the substrate and allows instantaneous change of temperature of the heating / cooling liquid.

A substrate holding apparatus is for holding a substrate such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. The substrate holding apparatus comprises a vertically movable member, and an elastic member for defining a chamber. The elastic member comprises a contact portion which is brought into contact with the substrate, and a circumferential wall extending upwardly from the contact portion and connected to the vertically movable member. The circumferential wall has a stretchable and contractible portion which is stretchable and contractible vertically.

An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to be biased against the backside of the semiconductor device structure during polishing thereof. The pressurization structures are independently movable with respect to one another. The amount of force or pressure applied by each pressurization structure to the backside of the semiconductor device structure is controlled by at least one corresponding actuator. The actuator may magnetically facilitate movement of the corresponding pressurization structure toward or away from the backside of the semiconductor device structure. The actuator may alternatively comprise a positive or negative pressure source. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

The present invention relates to a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against a polishing surface. The substrate holding apparatus comprises a top ring body for holding a substrate, an elastic pad for being brought into contact with the substrate, and a support member for supporting the elastic pad. The substrate holding apparatus further comprises a contact member mounted on a lower surface of the support member and disposed in a space formed by the elastic pad and the support member. The contact member has an elastic membrane for being brought into contact with the elastic pad. A first pressure chamber is defined in the contact member, and a second pressure chamber is defined outside of the contact member. The substrate holding apparatus further comprises a fluid source for independently supplying a fluid into, or creating a vacuum in, the first pressure chamber and the second pressure chamber.

Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

A chemical-mechanical polish (CMP) machine and fabrication process using the same. The CMP machine has a CMP retaining ring comprising: an inner peripheral surface; an outer peripheral surface; a lower surface adapted to contact and depress an upper surface of a polishing pad during chemical mechanical polishing of a lower surface of a substrate. The substrate is contained within the inner peripheral surface of the retaining ring during chemical mechanical polishing. At least a groove on the lower surface of the retaining ring. At least a portion of the groove has a rounded contour. In an aspect, the groove has a semicircle profile. In another aspect, the groove has a semicircle profile and a curved top corner profile at adjacent to the lower surface of the retaining ring. The retaining ring with a curved portion of groove reduces the accumulation of dried slurry in the groove and thus reduces micro-scratches.

An apparatus for polishing a wafer comprises a supporting portion having an abrasive pad disposed thereon, and a polishing head disposed over the abrasive pad. The polishing head comprises a carrier having at least two fluid passages, a retainer ring disposed on a lower edge of the carrier, forming a space for receiving the wafer, a supporter disposed in the carrier, and a flexible membrane disposed to be in contact with the wafer. The supporter has an upper surface portion, a lower surface portion, a plurality of first holes, a plurality of second holes, and a first chamber. The upper surface portion of the supporter forms a second chamber along with an inner surface of the carrier. The second chamber is in communication with one of the two fluid passages of the carrier and the second holes are formed in a lower surface portion of the supporter to communicate with the second chamber. The first chamber is in communication with the other one of the two fluid passages and the first holes are formed in the lower surface portion of the supporter to communicate with the first chamber. The lower surface portion of the supporter has a flat surface and a chamfered or rounded edge. The membrane disposed to enclose the lower surface portion of the supporter has a plurality of third holes formed at positions corresponding to the first holes to absorb and hold the wafer by vacuum.

A polishing is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a substrate holding apparatus configured to hold the substrate and to press the substrate against the polishing surface, and a controller. The substrate holding apparatus includes an elastic membrane configured to form a substrate holding surface which is brought into contact with the substrate, a carrier provided above the elastic membrane, at least one pressure chamber formed between the elastic membrane and the carrier, and an infrared light detector configured to measure thermal energy from the elastic membrane. The controller calculates an estimate value of a temperature of the elastic membrane using a measured value of the infrared light detector.

An L-shaped slide plate mounted with a workpiece holding device on a slide guide is firmly attached to an angle adjustment mechanism, and a reciprocating motion drive unit mounted with the angle adjustment mechanism on a slider table is firmly attached to a bridge so that an angle between a surface of a workpiece to be lapped and a surface of a lapping plate is kept substantially constant, and also the bridge is disposed so as to stride the lapping plate. Thereby, in a state of row bar in which a plurality of magnetic head sliders run in a line, an air bearing surface of magnetic head can be lapped with high accuracy with an element recession being decreased and an occurrence of a scratch being restrained.

A semiconductor wafer processing system, more specifically, a chemical mechanical planarization system including a polishing media reconditioning system. In one embodiment, the polishing media reconditioning system comprises at least a first and second conditioning roller that contact a working surface of a polishing media while rotating in opposite directions. Other embodiments include conditioning plates disposed on a carrier that includes the polishing head, a conditioning roller or disk that traverses the surface of the polishing media and a conditioning disk that conditions the polishing media while retained in the polishing head. Alternatively, the polishing media may be conditioned utilizing the devices embodied above remotely from the processing system.

In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

The present invention is a carrier for a double-side polishing apparatus in which, in a double-side polishing apparatus, the carrier is set between upper and lower turn tables to which polishing pads are attached, and a holding hole to hold a wafer sandwiched between the upper and lower turn tables in polishing is formed in the carrier, wherein the carrier is made of titanium. Thereby, there is provided a carrier for a double-side polishing apparatus in which the strength of the carrier itself is high, and at the same time, contamination of a wafer such as a silicon wafer by impurities is suppressed, and sag in a peripheral portion of the wafer after being polished is suppressed.

The present invention relates generally to a device used to process workpieces. In particular, the invention relates to a carrier that is used to support a workpiece during workpiece honing, grinding, or polishing. The carrier includes a rigid core coated with a fiber-free, scratch-resistant material to prevent scratching of workpieces disposed in the carrier. An adhesive layer is typically used to attach the scratch-resistant layer to the rigid core. The adhesive film and the scratch-resistant films may be attached to the rigid core by hot pressing.

Provided are a bonding substrate whose defective bonding portion in a peripheral region of an active layer has been removed by a polishing applied thereto after a surface grinding, a manufacturing method of the same substrate and wafer periphery pressing jigs. After the surface grinding, a periphery removing polishing is applied from an active layer wafer side of a bonding wafer so that a peripheral region of the active layer may be removed and a central region thereof may be left un-removed. Consequently, a periphery grinding and a periphery etching according to the prior art can be eliminated. Furthermore, an etch pit on a circumferential face of a wafer which could be caused by the periphery etching and a contamination or a scratching in an SOI layer which could be caused by a silicon oxide film left un-ground-off can be prevented, thereby achieving high yield and low cost.