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42results about How to "Improve material removal rate" patented technology

Titanium alloy pipe inner wall magneto-rheological polishing method and device

The invention provides a titanium alloy pipe inner wall magneto-rheological polishing method and device. Magneto-rheological liquid is pumped into a polishing head inner cavity along the inner surfaceof a transmission rod under the effect of a creepage pump, and flows over through rectangular holes around the middle of a polishing head, the liquid flows to the polishing area from the left side and the right side, under the effect of a magnetic field, the apparent viscosity and the shear yield stress of the magneto-rheological liquid are rapidly increased, a Bingham medium with certain viscousplasticity is formed, along with relative motion of the polishing head and the pipe wall, the Bingham medium carries out shear removal on the pipe wall material, the magneto-rheological liquid obtained after polishing is collected through magneto-rheological liquid collecting mechanisms on the two sides of a pipe fitting, through filtering and stirring, the polishing process is continuously carried out, and circular utilization of the magneto-rheological liquid is achieved; in the magneto-rheological liquid circulation process, heat generated in the polishing area is brought away. The inner wall of the titanium alloy pipe can be automatically polished, the beneficial effects of being easy to control, good in polishing uniformity, high in work efficiency and the like are achieved, and themethod and device are particularly suitable for polishing treatment of the inner wall surface of the fine and long titanium alloy pipe.
Owner:NORTHEASTERN UNIV

Ultrasonic-electric combined cutting device and method for SiC single crystal wafer.

InactiveCN105033373AShorten finished product processing timeImprove material removal rateUltrasonic generatorElectrochemistry
The invention discloses an ultrasonic-electric combined cutting device for a SiC single crystal wafer. The ultrasonic-electric combined cutting device comprises a glass groove. The glass groove is formed in a machine tool clamp. The bottom in the glass groove is fixedly connected with a resin base. The resin base is provided with a SiC crystal bar. A scroll saw is arranged above the glass groove. An ultrasonic generator is arranged above the scroll saw. The scroll saw is connected with the negative electrode of a direct-current pulse power source to serve as the cathode electrode. The SiC crystal bar is connected with a positive electrode of the direct-current pulse power source to serve as the anode electrode. An electrolytic solution is arranged in the glass groove, and the SiC crystal bar is soaked in the electrolytic solution. Diamond particles are dispersed in the electrolytic solution. The invention further discloses an ultrasonic-electric combined cutting method for the SiC single crystal wafer. According to the ultrasonic-electric combined cutting device and method for the SiC single crystal wafer, through an ultrasonic vibration machining and electrochemical machining combined method, the finished product machining time of the SiC single crystal wafer is shortened, the material removal rate is increased, wafer surface quality is improved, wear of the diamond scroll saw is lowered, waste caused by direct cutting of the scroll saw for precious hard and brittle materials is lowered, and the service life of the cutting device is prolonged.
Owner:XIAN UNIV OF TECH

Method and device for preparing polycrystalline silicon solar cell texture

The invention relates to a method and device for preparing a polycrystalline silicon solar cell texture. The method comprises the following steps of: compositely machining a polycrystalline silicon wafer by using laser and electrochemistry; forming an array light trapping structure on the machined surface of the polycrystalline silicon wafer; meanwhile, generating electrochemical corrosion to thesurface of the polycrystalline silicon wafer by using electrolyte; and carrying out smooth finishing on the machined surface. The device for realizing the method comprises a laser 5 and an electrolysis mechanism 15 as well as a power supply 1 and a workbench 11, wherein the electrolysis mechanism 15 mainly comprises an electrolytic cell base 13, an electrolytic cell cover plate 4, a cathode 8, ananode 12, a workpiece mounting fixture 14, a sealing ring 10 and an optical protective mirror; the polycrystalline silicon wafer is placed in the electrolytic cell and the electrolytic cell is divided into two chambers so that the electrolytic cell is an unique current channel during electrolysis. The invention provides a novel highly efficient texture machining method of the polycrystalline silicon solar cell; and the product has the advantages of high repeatability, good height to width aspect ratio performance and important effect on increasing the photoelectric conversion efficiency; and the reflection reducing effect which is superior to the reflection reducing effect of the texture prepared through pure chemical corrosion can be obtained.
Owner:NANTONG UNIVERSITY
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