The invention relates to an HEMT device integrating P-AlGaN and a
graphene layer in a drain region and a manufacturing method, and belongs to the field of
semiconductor power device manufacturing, the HEMT device sequentially comprises a substrate, a GaN buffer layer, a GaN channel layer and an AlGaN
barrier layer from bottom to top, source
metal is arranged above the left side of the AlGaN
barrier layer, and the
graphene layer is arranged above the right side of the AlGaN
barrier layer. A p-GaN cap layer is arranged between the source
electrode metal and the
graphene layer above the AlGaN barrier layer, and grid
electrode metal is arranged above the p-GaN cap layer; a plurality of p-AlGaN islands are arranged in the graphene layer, and drain metal is arranged above the graphene layer. According to the invention, through coexistence of PN junction regulation and
ohmic contact, the effects of reducing resistance and improving heat dissipation and the like of the
graphene electrode are combined, the comprehensive performance of the device is optimized, the
breakdown voltage can be effectively improved, the
on resistance is reduced, the current collapse is inhibited, and a new thought is provided for preparation of high-performance GaN power and
radio frequency devices.