5 results about "Nanoelectronics" patented technology

The application provides a high-durability FeFET based on a ferroelectric hafnium aluminum oxide and aluminum oxide gate stack and a preparation method thereof, and belongs to the field of micro-nano electronics. The FeFET device comprises a silicon substrate, a patterned aluminum oxide intermediate layer, a hafnium aluminum oxide ferroelectric layer, a gate metal electrode and a contact metal are sequentially arranged on the surface of the silicon substrate, a source-drain region is formed on the surface of the silicon substrate through self-aligned ion doping, a source-drain metal contact electrode is arranged above the source-drain region, the hafnium aluminum oxide ferroelectric layer is grown through atomic layer deposition, the cycle number of hafnium oxide and aluminum oxide is controlled in the atomic layer deposition cycle process to control the atomic proportion of doping, the proportion of hafnium atoms and aluminum atoms in the finally formed hafnium aluminum oxide ferroelectric layer is 24:1, and the hafnium aluminum oxide ferroelectric layer stores two storage states in different polarization states. The application can improve the durability of the FeFET storage device.

This invention belongs to the field of semiconductor devices and micro / nanoelectronics technology, and discloses a CNTFET based on MoTi alloy contacts and its fabrication method. The CNTFET includes a substrate, a gate electrode, a gate dielectric layer, a carbon nanotube channel, and source and drain electrodes, wherein the source and drain electrodes are MoTi alloys or multilayer metal structures coated with MoTi layers. By controlling the Mo / Ti atomic ratio and optimizing deposition process conditions, this invention constructs a contact structure with tunable work function, high oxidation resistance, and excellent thin film quality, effectively reducing the Schottky barrier between the metal and carbon nanotubes, and achieving stable near-ohmic contacts. This device overcomes the shortcomings of existing technologies such as easy oxidation of low work function metals like Sc and Y, poor interface stability, and insufficient process compatibility. It significantly reduces contact resistance and improves the N-type conductivity stability, on-state current, and long-term reliability of the device in air environments, making it suitable for the integration of high-performance carbon-based logic devices and next-generation micro / nanoelectronic systems.

The application discloses a reserve pool calculation method based on 2T0C dual-mode judgment, and belongs to the technical field of micro-nano electronics. hold By changing the storage node relaxation time constant tau, the short relaxation and the long relaxation are switched between each other, and the multi-level threshold layer judgment mechanism is combined, so that the complementary extraction and fusion classification of the image time sequence-space double features are realized, the precision and the generalization ability of image recognition are obviously improved, and the advantages of simple hardware structure and low power consumption are kept.

This invention discloses a one-dimensional coaxial heterostructure composite material, its preparation method, and its applications. The one-dimensional coaxial heterostructure composite material comprises: a nanotube with a cavity structure, and a one-dimensional embedded material uniformly embedded within the cavity structure of the nanotube. The one-dimensional embedded material includes one or more combinations of molybdenum sulfide, molybdenum selenide, and molybdenum telluride, forming a coaxial heterostructure between the nanotube and the embedded material. The preparation method of this invention efficiently synthesizes the one-dimensional coaxial heterostructure composite material on a substrate using chemical vapor deposition. This method is simple, versatile, and has the potential for large-area preparation. The prepared one-dimensional coaxial heterostructure composite material has advantages such as high quality and good uniformity, ensuring the convenience of synthesizing the one-dimensional heterostructure and providing a new material foundation for the development and application of embedded one-dimensional materials in nanoelectronics, nanooptics, and other fields.

The application discloses a preparation method of metal nanometer material surface protrusions and belongs to the field of nanoelectronics. In the application, metal nanometer wires or nanometer strips are first prepared into two-end devices, the metal nanometer wires are annealed by using Joule heat, and the initial morphology of the surface of the nanometer wires is stabilized through electrical preparation operation, then a semiconductor parameter analyzer and a matched probe station are used to perform current-voltage (I-V) scanning on the metal nanometer wires, the three-dimensional metal protrusions on the surface of the nanometer wires are regulated to the required morphology and height by monitoring the transient slope of the R-V curve of the nanometer wires and the amplitude of the resistance increase.