92 results about "Nanoelectronics" patented technology

The present invention relates generally to nanotechnology and sub-microelectronic circuitry, and more particularly to nanoelectronics. One aspect of the invention is directed to nanostructures on substrates. In some cases, the substrate may be or comprise glass and/or polymers, and in some cases, the substrate may be flexible and/or transparent. The present invention is also directed, according to another aspect, to techniques for fabricating nanostructures on substrates. For example, monolayers of nanoscale semiconductors may be etched, e.g. photolithographically, to yield discrete and/or predetermined arrays of nanoscale semiconductors and other articles on a substrate. In one embodiment, the array may include hundreds, thousands, or more of electronic components such as field-effect transistors. Such arrays may be connected to electrodes using photolithographic techniques, and in some cases, without the need for registering individual semiconductor-metal contacts.

Spin-torque devices are based on a combination of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects. The basic structure has various applications, including amplifiers, oscillators, and diodes. For example, if the low-magnetoresistance contact is biased below a critical value, the device may function as a microwave-frequency selective amplifier. If the low-magnetoresistance contact is biased above the critical value, the device may function as a microwave oscillator. A plurality of low- and high-magnetoresistance contact pairs may be induced to oscillate in a phase-locked regime, thereby multiplying output power. The frequency of operation of these devices will be tunable by the external magnetic field, as well as by the direct bias current, in the frequency range between 10 and 100 GHz. The devices do not use semiconductor materials and are expected to be exceptionally radiation-hard, thereby finding application in military nanoelectronics.

Atomic wires of great length and great stability are formed on the surface of a SiC substrate as straight chains of dimers of an element chosen from amongst SiC and C. In order to produce same, layers of the element are formed on the surface and the assembly is constructed by means of annealings of the surface provided with the layers. The resulting wires have application to nanoelectronics.

Disclosed are low power electronic devices configured to exploit the sub-threshold swing, unidirectional tunneling, and low-voltage operation of steep slope-tunnel tunnel field-effect transistors (TFET) to improve power-conversion efficiency and power-efficiency of electrical systems incorporating the TFET as an electrical component to perform energy harvesting, signal processing, and related operations. The devices include a HTFET-based rectifier having various topologies, a HTFET-based DC-DC charge pump converter, a HTFET-based amplifier having an amplifier circuit including a telescopic operational transconductance amplifier, and a HTFET-based SAR A/D converter having a HTFET-based transmission gate DFF. Any one of the devices may be used to generate a RF-powered system with improved power conversion efficiencies of power harvesters and power efficiencies of processing components within the system.

The invention discloses a flexible transparent conductive material of a topological insulator and a preparation method and application of the flexible transparent conductive material of the topological insulator. The preparation method of the flexible transparent conductive material of the topological insulator includes the steps of patterning or functionally modifying a substrate, placing the topological insulator in the middle of the gas flow direction, placing the substrate obtained in the step 1 under the gas flow direction, introducing carrier gas into a reactor for deposition, stopping introducing the carrier gas after the deposition is completed, cooling the substrate to the room temperature and finally obtaining the topological insulator material on the surface of the substrate. The flexible transparent conductive thin film or nano-material obtained with the method has high light transmission performance in a wide wavelength range, particularly in a near infrared region. Besides, a stable conductive channel can be provided by utilizing the special metal surface state of the topological insulator, so that the flexible transparent conductive material has high conductivity, excellent disturbance rejection performance and mechanical properties. The novel flexible transparent photoelectric element can be used in the fields of photoelectronics, nanoelectronics and the like.

A device for generating a tensile force between a substrate and a coating, wherein the substrate has a thickness defined by a first side and a second side in a first axis, and the coating is applied to the first side of the substrate such that the coating and substrate are axially spaced along the first axis in intimate facing contact with each other to form a coating/substrate interface. The apparatus has a glass element disposed on the second side of the substrate and axially spaced along the first axis. The glass element is configured to propagate a stress wave to the coating/substrate interface to generate a tensile force between the substrate and the coating.

Systems and methods are provided for the manipulation of a polarizable object with a pair of elongated nanoelectrodes using dielectrophoresis. The nanoelectrodes can be carbon nanotubes and are coupled with one or more time-varying voltage sources to create an electric field gradient in a gap between the nanotubes. The gradient induces the movement of a polarizable object in proximity with the field. The nanotube pair can be used to trap a single polarizable object in the gap. A method of fabricating a nanoelectrode dielectrophoretic system is also provided. Applications extend to self-fabricating nanoelectronics, nanomachines, nanochemistry and nanobiochemistry. A nanoelectrode dielectrophoretic system having an extended nanoelectrode for use in applications including the self-fabrication of a nanowire, as well as methods for fabricating the same, are also provided.

The invention relates to a preparation method for a high-purity and high-density WS2 lamellar nano structure and belongs to the technical field of material preparation. The preparation method adopts a vacuum pipe type furnace and takes tungsten oxide and sulfur powder as evaporation sources; the WS2 lamellar nano structure is deposited by one-step synthesis through a hot evaporation method on a silicon wafer, a gallium arsenide wafer, a sapphire wafer, a silicon carbide single crystal wafer or an aluminum oxide wafer which is flat in surface and bright and clean under the protection of carrier gas. The method has the advantages of strict and controllable deposition condition, simple equipment and process, large output, low cost, environmental friendliness and the like. The obtained nano structure product is high in purity; the diameter thickness distribution is uniformly distributed and the size and the thickness are controllable; the nano structure has a wide application prospect in the aspects of photocell electrodes, lubricants, catalysts, nanoelectronics and the like.

The invention provides a method for preparing graphene with controllable layer number and width by adopting the electronic beam irradiation technology, comprising the following steps of: irradiating polymethyl methacrylate nanometer fibers by using electronic beams to enable the polymethyl methacrylate nanometer fibers to be gradually graphitized, and forming sequential multilayer graphene parallel to the irradiation direction of the electronic beams; and the number of layers and the width of the graphene are controlled through the current density, the irradiation time and the beam spot size of the electronic beams. The method is rapid, precise and controllable in preparing graphene with no need of high temperature, thus being suitably applied to the fundamental researches of micro-nanoelectronics.

The invention relates to a preparation method of a boron nitride nano tube. The method comprises the steps of carrying out ball milling on metal magnesium powder and low-cost boron oxide as a boron source instead of B to prepare a precursor; preparing the pure-phase boron nitride nano tube with a high length-diameter ratio in high-temperature ammonia gas atmosphere in a vertical induction heating furnace. According to the invention, used raw materials are boron oxide powder and metal magnesium powder which both belong to ordinary chemical raw materials which are industrially produced, are low and easily available and non-toxic; the synthesized boron nitride nano tube is high in purity, large in length-diameter ratio, little in defect and uniform in morphology; the method is non-toxic, reliable and suitable for synthesis on large scale; the prepared boron nitride nano tube can be applied to the fields of nanoelectronics, electronic heat dissipation elements, solid/liquid lubricants, nano composite materials, high-temperature structure members and the like.

Novel use of a cladded quantum dot array layer serving as a waveguide channel by sandwiching it between two cladding layers comprised of lower index of refraction materials is described to form Si nanophotonic devices and integrated circuits. The photonic device structure is compatible with Si nanoelectronics using conventional, quantum dot gate (QDG), and quantum dot channel (QDC) FET based logic, memories, and other integrated circuits.

This invention provides an electrochemically active organic thin film capable of repeating reversible oxidation/reduction a number of times. Further, the invention provides a novel approach to so-called “molecular nanoelectronics” utilizing organic molecules as operating units, with the use of such organic thin film. Such electrochemically active organic thin film comprises a substrate, an organic molecular film comprising organic molecules having terminal amino groups chemically fixed on the surface of the substrate, and metal atoms or metal ions coordinately hound to the amino groups.

The invention discloses a preparation method of stable graphene colloidal dispersion liquid, and relates to the technical field of graphene preparation. The stable graphene colloidal dispersion liquid can be obtained by preparing graphene oxide via an improved Hummer's method, reducing graphene oxide and then treating the product by using a dispersing agent. The concentration of the stable graphene colloidal dispersion liquid is 0.21-0.25mg/mL and the stable graphene colloidal dispersion liquid contains 14-25wt% of single-layer graphene. The graphene colloidal dispersion liquid has Tyndall effects and has zeta potential of minus 41-minus 33mV and mean grain size of 250-400nm. The method is simple and practicable, is easy in control of the reaction process, does not have special requirements for equipment, is lower in cost, is easy to popularize and can be widely applied to the fields of nanoelectronics, sensors, nanocomposites, batteries, supercapacitors, hydrogen storage materials and the like.

The invention relates to a carbon-based field effect transistor and a preparation method thereof, and belongs to the technical field of nanoelectronics. The carbon-based field effect transistor comprises a semiconductor substrate, an insulating layer, a conductive channel, a source electrode, a drain electrode, a gate dielectric layer and a gate electrode, wherein the insulating layer is arranged on the semiconductor substrate, and the conductive channel is arranged on the insulating layer; the conductive channel is made of a carbon-based material, and the source electrode and the drain electrode are respectively arranged at the two ends of the conductive channel; the gate dielectric layer is covered on the source electrode, the drain electrode, and the conductive channel arranged between the source electrode and the drain electrode, and the gate electrode is positioned above the gate dielectric layer; and the gate dielectric layer comprises a benzocyclobutene organic dielectric layer. According to the carbon-based field effect transistor and the preparation method thereof, the problem that a high-dielectric-constant gate dielectric film directly grows on the conductive chanel formed by a carbon-based material in the atomic layer deposition method, and the benzocyclobuten provides an atomic layer deposition nucleation center without causing a significant decrease in the carrier mobility of the carbon-based material and causing the decline in the device performance.

A method for implementing electronic circuit modules on elongated structures of semiconducting materials such as carbon nanotubes, graphene nanoribbons, elongated structures of semiconducting polymers or organic semiconductors, other related materials, and printed electronics strip structures is disclosed. The method provides that a plurality of modules can be implemented on distinct adjacent portions of the same elongated structure of semiconducting materials. In powering the modules, each circuit comprises a chain of electronic components arranged so that each end of the chain can function as a power supply terminal. Larger electronic circuit modules can be created from smaller module, and. such a modular hierarchy may be extended to an arbitrary number of levels. In a Computer Aided Design (CAD) applications for nanoelectronics and printed electronics, designs for hierarchies electronic circuit modules can be stored and retrieved from one or more a libraries of circuit designs.

Embodiments of the invention relate to a branched or multichain nucleic acid switch adapted to switch from a first conformation to a second conformation upon ligand binding. The switch includes a probe strand, P, which includes the ligand binding domain; a switching framework which includes a cover strand (C), and a tether that holds P and C together and a signaling apparatus. Some embodiments include a toggle strand (T) where now the tether holds P, C, T, and the signaling apparatus together. As the switch changes between the first and second conformations; the signaling apparatus reports the state of the switch. The signaling entity is typically a lumiphore and a quencher located along the switching framework. Nucleic acid switches have applications in real time assays for diverse agents including infectious agents, environmental toxins, and terrorist agents, as well as screening methods for such agents. Further applications are found for nanoelectronics, nanofabrication and nanomachines.

A circuit element includes a plurality of computation blocks connected at least partially in series for processing multi-bit numbers. Each of the computation blocks includes a plurality of transistors having characteristic threshold voltages. The circuit element is configured so that the transistors will each operate at a voltage below its threshold voltage. The circuit element includes a plurality of circuit sub-elements each having an output. The circuit sub-element outputs are connected together.