285 results about "Benzocyclobutene" patented technology

The invention is a curable cyclobutarene based polymer comprising acid functional pendant groups. The cured polymer displays excellent qualities of toughness, adhesion, dielectric constant, and low stress. The preferred system is soluble in an aqueous base and can be used to generate patterned films with excellent resolution without the need to handle organic developer solvents.

The invention relates to a single-mode high-power vertical cavity surface emitting laser (VCSEL), which belongs to the field of semiconductor photoelectronics. The laser is characterized by comprisinga P-type electrode (1), a P-type Si substrate (2), a metal bonding layer (3), a P-type distributed Bragg reflector (DBR) (4), an oxide limiting layer (5), an active area (6), an N-type DBR (7), a SiO2 mask (8), polymide or benzocyclobutene (BCB) (9), an N electrode (10), a photonic crystal (11) and a light-exiting window (12). The introduction of the photonic crystal into the vertical cavity surface emitting laser with the structure can enlarge an oxidation aperture and improve the single-mode output power; and at the same time, the transfer of the conventional VCSEL epitaxial wafer to the Sisubstrate by adopting bonding technology and the adoption of a design of exiting light at the bottom are convenient for narrowing the distance between a VCSEL epitaxial wafer active area and the Si substrate, improving the thermal characteristics of devices and further improving the single-mode output power.

The invention relates to a wafer level MMCM (microwave multichip module) packaging structure using photosensitive BCB (benzocyclobutene) as a dielectric layer and a method. The packaging structure is characterized by 1) manufacturing metal ground (GND) shielding layers on a silicon substrate with cavities for embedding; 2) using the photosensitive BCB as the dielectric layers and forming an interconnected through hole structure on the BCB by utilizing photoetching and developing processes; and 3) forming a multi-layer interconnection packaging structure through alternate occurrence of metal layers and the dielectric layers. The method is characterized by eroding or etching the cavities for embedding on the silicon substrate, sputtering a metal seed layer and carrying out electroplating to form the GND, embedding MMIC (monolithic microwave integrated circuit) chips, using conductive adhesives to bond the chips and the substrate, coating the photosensitive BCB and carrying out photoetching and developing to form the interconnected through hole patterns and carrying out curing to realize multi-layer MMCM package. The thickness of the dielectric layers is 20-35mu m. Capacitors, resistors, inductors, power dividers and antenna passive devices can be integrated in the multi-layer interconnection structure or discrete components are integrated through surface mount technology, thus realizing the functionalization of the module.

Provided are an infrared photodetector and a method for manufacturing the same. The infrared photodetector includes a bottom contact layer, a light absorption layer stacked on the bottom contact layer, a top contact layer stacked on the light absorption layer, a metal layer stacked on the top contact layer to induce surface plasmon resonance and having a plurality of holes, and a dielectric layer stacked on the metal layer to satisfy an antireflection condition with respect to externally impinging light at a surface plasmon resonance frequency. The dielectric layer is a benzocyclobutene (BCB) layer.

A dielectric composite material containing a toughened benzocyclobutene resin and at least about 50% by weight of an inorganic filler. Also electronic packages having at least one conductive layer and at least one layer of the dielectric composite material. The dielectric composite material can have a dielectric constant less than about 3.5, and a dielectric loss of less than about 0.004.

In some embodiments, a low-k dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of through-silicon vias used in three-dimensional (3-D) integration of integrated circuits. A semiconductor workpiece having a via is provided. A dielectric film liner, preferably comprising benzocyclobutene, is deposited on the sidewalls of the via by chemical vapor deposition. Following the deposition of the dielectric film liner, conductive material is deposited into the via. The conductive material on the bottom of the via can be exposed by thinning the back of the semiconductor workpiece, thereby forming a through-silicon via. The semiconductor workpiece can form a stack with one or more additional semiconductor workpieces having vias filled with conductive material to form a 3-D integrated circuit. The conductive material electrically interconnects the integrated circuits at different levels of the stack.

An SiCN layer 108, BCB layer 110 and MSQ layer 112 are deposited in this sequence on a copper interconnect line constituted by a barrier metal layer 104 and a copper layer 106. The BCB layer 110 is formed by plasma polymerization of a monomer containing a divinylsiloxane bisbenzocyclobutene unit.

The invention comprises a manufacturing method of an evanescent wave coupling high-speed high-power photoelectric detector. The method comprises a, sequentially growing an InP stress buffering layer, ten cycle-alternating InP/InGaAsP diluted waveguide layers, two InGaAsP light matching layers, three InGaAs absorbing layers, an InP diffusion barrier layer and an InGaAs contact layer; b, doping the InGaAs contact layer through a Zn3As2 source; c, fabricating a P electrode; d, defining an active area; e, defining an optical fiber input waveguide area; f, defining a coupling waveguide area; g, fabricating an N electrode; h, guaranteeing good ohmic contact between the P electrode and the N electrode through a rapid annealing method; i, planarizing the whole table board through benzocylobutene materials to the same plane with the P electrode; j, fabricating coplanar waveguide electrodes; k, thinning epitaxial wafers to 110 mu m and cleaving the epitaxial wafers to strip array chips; l, coating film on the waveguide end surfaces of the strip array chips; m, cleaving the array chips into unit chips.

A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF₄ and O₂, where CF₄ has a first partial pressure, second step etches the photo-resist patterned on the top of the BCB layer by a mixed gas of CF₄ and O₂, where CF₄ in this step has the second partial pressure less than the first partial pressure, and third step etches the BCB left in the first step by mixed gas of CF₄ and O₂, where CF₄ in this step has the third partial pressure greater than the second partial pressure.

The invention relates to a semiconductor device, a preparation method and a packaging method thereof. The preparation method comprises the steps of S1, providing a substrate on which an interlayer dielectric layer and a binding pad in the interlayer dielectric layer are formed; S2, forming a photosensitive benzocyclobutene material layer on the interlayer dielectric layer and the binding pad, thereby covering the interlayer dielectric layer and the binding pad; and a step S3, patterning the benzocyclobutene material layer for forming an opening and exposing the binding pad. The semiconductor device, the preparation method and the packaging method are advantageous in that 1, a hybrid bonding process is used for performing sealed bonding on a bond pad (such as a Cu pillar), thereby improving bonding strength and improving bonding quality of a wafer; 2, an AD-BCB material with insulativity is used for performing auxiliary bonding, a problem of weak current between Cu pillars can be settled, and electric stability is improved; and 3, hybrid bonding is utilized, thereby greatly improving packaging stability and prolonging service life of a chip.

The invention discloses a nanowire based vertical circular grating transistor and a preparation method thereof. According to the structure, a conducting channel material is an intrinsic or low doped nanowire perpendicular to a substrate; a low-resistance nanowire is connected above the intrinsic or low doped nanowire in a gapless manner; the intrinsic or low doped nanowire is surrounded by a source electrode, a gate medium and a gate electrode sequentially from bottom to top; the source electrode and the gate medium as well as the gate medium and the grate electrode are connected in the position of the side wall of the nanowire in a gapless manner; the low-resistance nanowire is surrounded by a drain electrode; and three isolation layers are arranged among the electrodes. The invention further provides the preparation method of the transistor. Both the source electrode and the gate electrode are obtained with the method that firstly, a metal film is plated and then metal above BCB (benzocyclobutene) is eroded by using BCB as a mask; and the low-resistance nanowire is obtained through heavy doping of the intrinsic or low doped nanowire or through metal alloy. According to the short-channel transistor structure and the preparation method, a device with a short channel can be prepared, the parasitic resistance and the parasitic capacitance can be effectively reduced, and the device performance is improved.

The invention belongs to the technical field of polymer materials, and concretely relates to a functionalized organosilicon compound containing benzocyclobutene, and a preparation method thereof. The functionalized organosilicon compound containing the benzocyclobutene is prepared through reacting an organosilicone precursor containing the benzocyclobutene and a substrate containing hydroxyl under an alkaline condition, and can be subjected to reduced pressure distillation or column chromatography purification. The functionalized organosilicon compound containing the benzocyclobutene can be used for polymerization reaction, and can be pre-polymerized in a sym-trimethylbenzene solvent at the temperature of 150 to 180 DEG C to obtain a prepolymer with a certain molecular weight, and a thin film is prepared through further spin-coating and post curing; a nitrine type photosensitizer can be added in a monomer prepolymer containing double bonds so as to be used for preparing a photoresist, which can be applied in the fields of electronic packaging and integrated circuits.

The invention relates to an etch tank adopted in the process of packaging and manufacturing a TSV (Through Silicon Via) wafer and a preparation process. The etch tank is characterized in that the wall of the etch tank is vertical, the surface area of the etch tank is 1.2-1.3 times that of BCB (Benzocyclobutene) coated on photoetching, the depth of the vertical tank wall of the etch tank is slightly less than the thickness of the coated BCB, and the BCB is coated on a naked supporting wafer. The etch tank is made of the TSV wafer. The TSV packaging and manufacturing process comprises the following steps of: sputtering a metal layer on the naked supporting wafer, and then etching after coating a layer of BCB; etching the etch tank on the front face of the TSV wafer by using DRIE (Deep Reactive Ion Etching), and then etching a TSV array by using the DRIE, wherein the etch tank corresponds to the BCB photoetched on the supporting wafer; and bonding one face of the supporting wafer with the BCB and the front face of the TSV wafer after being aligned, and blocking the fused BCB in an extension process by using the etch tank. The structure has the function of controlling the bonding size of the BCB.

The invention relates to a method for producing low-temperature circle sheet micro gas box, which is characterized in that: the benzocyclobutene is used to process material linkage with humid etching or dry etching technique of semi-conductor in 250Deg. C, to realize the circle sheet air-tightness sealing linkage of chip-level gas box. The invention comprises a atom gas box containing a chip-level atom clock gas box, a high-precision magnetic field sensor gas box, a atom feedback glimmer frequency stabilizer; a atom gas box containing a atom light filter, with glimmer Fabry-Perot chamber. The linked BCB glue is in 0.2ª–m thickness, the air-tightness of sealed He gas can reach 2.1-5.9X10-4Pa cm3/s, and the linkage strength is higher than 4.65MPa, while the thermal cycle reliability can fully reach the packing standard of micro electric device.

The invention belongs to the technical field of macromolecular materials and particularly relates to a benzocyclobutene functional groups-contained benzoxazine monomer and a synthetic method and a use thereof. According to the synthetic method, amino-contained benzocyclobutene, phenolic compounds and formaldehydes (or paraformaldehydes) are adopted as raw materials, and the target monomer is obtained through synthesizing by adopting a solvent method or a solvent-free method. The benzoxazine monomer has lower viscosity at a certain temperature and can be cured through a method of heating or catalyzing by a catalyst. The obtained resin after curing has excellent thermal stability, mechanical properties, and extremely-low hygroscopicity, and thus, the resin can be used as an electronic packaging material, a high-temperature resisting and flame-retarding material, a high-performance composite material, an aerospace material and the like.

The invention discloses a composite material with low dielectric constant and a process for preparation. The composite material with low dielectric constant includes benzocyclobutene and hollow inorganic nano-particles or includes benzocyclobutene derivative and hollow inorganic nano-particles. The process for preparation comprises adding benzocyclobutene and hollow inorganic nano-particles in a solvent, or adding benzocyclobutene derivative and hollow inorganic nano-particles to the solvent, mixing evenly to prepare spin coating liquid, forming films on a substrate by employing whirl coating method, positioning the prepared substrate in a tumbler with a stopper, then evacuating, inputting nitrogen, removing oxygen and remaining solvent in the system, keeping the temperature between 70 DEG C and 100 DEG C for 20-80 minutes, then increasing the temperature to 190-350 DEG C and keeping for 40-120 minutes, lowering the temperature and obtaining composite material with low dielectric constant. The prepared composite material has the advantages of low dielectric constant, high heat stability, high chemical stability, simple preparation and the like.

The invention relates to a carbon-based field effect transistor and a preparation method thereof, and belongs to the technical field of nanoelectronics. The carbon-based field effect transistor comprises a semiconductor substrate, an insulating layer, a conductive channel, a source electrode, a drain electrode, a gate dielectric layer and a gate electrode, wherein the insulating layer is arranged on the semiconductor substrate, and the conductive channel is arranged on the insulating layer; the conductive channel is made of a carbon-based material, and the source electrode and the drain electrode are respectively arranged at the two ends of the conductive channel; the gate dielectric layer is covered on the source electrode, the drain electrode, and the conductive channel arranged between the source electrode and the drain electrode, and the gate electrode is positioned above the gate dielectric layer; and the gate dielectric layer comprises a benzocyclobutene organic dielectric layer. According to the carbon-based field effect transistor and the preparation method thereof, the problem that a high-dielectric-constant gate dielectric film directly grows on the conductive chanel formed by a carbon-based material in the atomic layer deposition method, and the benzocyclobuten provides an atomic layer deposition nucleation center without causing a significant decrease in the carrier mobility of the carbon-based material and causing the decline in the device performance.

In order to implement a solid-state imaging device with high photo-sensitivity that includes a light collecting part which can reduce undesired variations during manufacture and which has high light collection efficiency, the solid-state imaging device includes: a photodiode ( 8 ) which converts incident light ( 13 ) into electric charges; a convex lens layer ( 15 ) which is formed above the photodiode ( 8 ) and through which the incident light is transmitted; and a concavo-convex lens layer ( 11 ) which is formed on and around the lens layer ( 15 ) and which collects the incident light and outputs the incident light to the lens layer ( 15 ). A refractive index of the lens layer ( 15 ) is greater than a refractive index of the lens layer ( 11 ). A thickness and a width of the lens layer ( 15 ) are set to achieve a predetermined focal length for light of a predetermined wavelength range. The lens layer (15) is made of one of a BPSG film, a TEOS film, a benzocyclobuthane and polyimide based resin.