256 results about "Conductive channel" patented technology

The invention discloses a modified graphite felt electrode for an all-vanadium redox flow battery and a preparation method of the modified graphite felt electrode, and belongs to the technical field of redox flow battery electrode materials. The preparation method comprises the following steps: graphite felt electrochemical oxidation etching treatment; self-assembling a conductive layer on the oxidized and etched graphite felt to obtain the graphite felt attached with the conductive layer; and loading a metal and nitrogen-doped carbon (M and NC) nano catalyst layer on the graphite felt attached with the conductive layer to obtain the modified graphite felt electrode. Various properties of the graphite felt are comprehensively improved through matrix treatment, structure change and load catalysis, mild electrochemical oxidation etching is adopted, a carbon fiber structure is protected, a self-assembled net-shaped conductive layer forms a stable conductive channel, the specific surface area is remarkably increased, a nitrogen-doped carbon shell is adopted to wrap metal nanodots to form an M-NC catalytic layer, and the specific surface area is remarkably increased. The catalyst layer is not easy to dissolve out, the capacity fading rate is obviously improved, the loading capacity of the catalyst layer on the reticular structure conducting layer with a larger specific surface area is larger, and meanwhile, the process is simple and low in cost.

Aspects of the present disclosure include a battery measurement system having a plurality of capacitors, a plurality of probes each electrically coupled with a corresponding capacitor of the plurality of capacitors and a corresponding battery of a plurality of batteries, a controller configured to measure, via the plurality of probes, a plurality of voltages associated with the plurality of batteries in response to an interrogatory current, and a plurality of sense cables each associated with the corresponding battery of the plurality of batteries, wherein each sense cable of the plurality of sense cables is disposed across the corresponding battery such that the interrogatory current flows in a conduction channel in the corresponding battery in a first direction and in the corresponding cable in a second direction substantially opposite of the first direction.

The invention relates to a pole-mounted circuit breaker monitoring method and system, electronic equipment and a medium. The method comprises the following steps: acquiring a voltage recovery waveform characteristic and a mechanical vibration characteristic during operation of a vacuum arc-extinguishing chamber, and performing timestamp alignment; calculating a contact gap conductive channel risk value based on the aligned waveform characteristics; generating breaking capacity attenuation trend characteristics by combining the historical breaking current peak value, the breaking times and the risk value; calculating the remaining service life according to the trend characteristics, and synchronously obtaining a fault probability value according to the conductive channel risk value; and finally, according to the residual service life and the fault probability value, determining a maintenance early warning level and outputting a maintenance early warning signal. Therefore, according to the method, the risk of the conductive channel is evaluated through fusion of the operation waveform and the mechanical signal, and the breaking capacity attenuation trend is extrapolated along the historical breaking data, so that online evaluation and advanced early warning of the health state of the pole-mounted circuit breaker are realized, and the operation reliability and the operation and maintenance efficiency of the key node of the power distribution network are improved.

The invention discloses copper paste, an electrode and a preparation method and application of the electrode, the electrode comprises copper powder, the copper powder comprises nano-copper particles and flaky copper powder, the nano-copper particles comprise at least two connected copper nanoparticles, and the adjacent copper nanoparticles are connected in a surface contact mode. According to the electrode disclosed by the invention, the nano-copper particles formed by connecting more than two copper nano-particles are filled in the gap areas among the large-size flaky copper powder, so that the nano-copper particles are in direct contact with the flaky copper powder, conductive channels among the conductive particles are smoother, and the structure of the electrode is more compact due to the filling of the nano-copper particles; the bulk resistance of the electrode is greatly reduced and is equal to the conductivity of a silver electrode; the nano-copper particles can also be used as an auxiliary adhesive after being sintered and cured, so that the adhesive force between the copper grid line and the solar cell is improved, and the connection between the grid line and the solar cell is firmer.

The invention provides a phosphorus emitter passivation structure and a preparation method thereof, the passivation structure comprises a phosphorus emitter, the phosphorus emitter comprises silicon, phosphorus, hydrogen, carbon and / or nitrogen, the surface of the phosphorus emitter is provided with a nano silicon oxide layer, the phosphorus emitter comprises an electric injection region and a doped region, the electric injection region is provided with a conductive layer at a corresponding position, and the doped region is provided with a conductive layer at a corresponding position. The conductive layer is used for being connected with a metal electrode, a passivation anti-reflection layer is arranged at the corresponding position of the doped region, and the carbon and / or nitrogen concentration of the electric injection region is higher than that of the electric injection region. Partitioned passivation is performed on the surface of the phosphorus emitter, and carbon and / or nitrogen atoms are introduced into the doped region, so that the interface passivation effect is improved; the electric injection region is not subjected to carbon and nitrogen doping and is not provided with a passive film, so that the influence of passivation on the contact resistivity is reduced; a conductive channel is introduced into the electric injection region for electric injection, so that the defect state of the phosphorus emitter can be further eliminated, and the recombination current is reduced.

A sensing device (100) for collecting a motion signal of a target object and a wearable device comprising the sensing device (100). The sensing device (100) comprises a first sensing unit (120) arranged on a first side face (110-a), facing a target object, of a flexible substrate (110). An electric signal generated by a first sensing unit (120) is conducted to a target position (A) through a first conductive channel (111) arranged on a flexible substrate (110), and the target position (A) is farther away from a target object relative to a first side face (110-a), so that the connection position of the sensing device (100) and an external circuit can be away from the first side face (110-a). The first side surface (110-a), facing the target object, of the sensing device (100) can be kept flat, and non-uniform deformation of the first sensing unit (120) of the first side surface (110-a) is avoided, so that the working stability of the sensing device (100) is improved. Meanwhile, the first side surface (110-a) is kept flat, so that the foreign body sensation when the sensing device (100) is worn can be reduced, and the wearing comfort of the sensing device (100) is improved.

The invention provides a 5KV high-reliability trench gate silicon carbide VDMOS and a preparation method thereof, and the method comprises the steps: depositing metal, and forming a drain metal layer; performing epitaxial growth to form a buffer layer and a drift layer; forming a barrier layer above the drift layer, and performing etching and ion implantation to form a P-type region; performing epitaxial growth to form an epitaxial layer; forming a barrier layer, etching, performing ion implantation, and forming a P + region, a P-type well region, an N-type region, a P-type shielding layer and an N-type source region; etching the epitaxial layer, the masking layer and the N-type region to form a groove and a lug boss, then oxidizing to form an insulating dielectric layer, and forming a trench in the insulating dielectric layer; depositing metal to form a gate metal layer; etching the N-type source region and the P + region, depositing metal to form a source metal layer, and removing the barrier layer to complete preparation; by constructing an L-shaped grid control structure, a multi-layer P-type protection structure from a drain electrode to a source electrode is formed, the source electrode and the grid electrode are protected, and the low-resistance characteristic of the device is ensured by double conductive channels.

The invention relates to the photovoltaic field, and discloses a hot spot prevention structure of a back contact battery and a preparation method of the hot spot prevention structure. According to the hot spot prevention structure of the back contact battery, the boron-doped layer and the extended phosphorus-doped layer are disconnected through the gap; wherein the boron diffusion layer and the phosphorus diffusion layer can form a conductive channel, the conductive channel is located in the semi-silicon substrate and is formed by diffusing boron / phosphorus atoms into the silicon substrate and diffusing the boron / phosphorus atoms to the periphery, and the design can avoid generation of larger conduction electric leakage. According to the hot spot prevention structure of the back contact battery, the electric leakage loss can be effectively reduced on the basis of reducing the risk of generating a hot spot effect at the assembly end.

The present invention relates to the technical field of semiconductors, and provides a semiconductor device and a manufacturing method for the semiconductor device. The semiconductor device comprises an epitaxial layer, a P-type ion implantation layer, an N-type ion implantation layer, a gate structure and a source structure. The manufacturing method comprises: forming the P-type ion implantation layer in the epitaxial layer; partially etching the P-type ion implantation layer to form a trench, a side wall area of the trench forming a cap layer structure; and then forming the N-type ion implantation layer in the P-type ion implantation layer, the N-type ion implantation layer being configured to be buried in the trench and to extend to the cap layer structure. Compared with the prior art, the present invention configures a first channel as a longitudinal conductive channel, so as to use the characteristic of high mobility of the longitudinal channel to increase turn-on current density in the case of a fixed size of unit cells, thereby achieving the purpose of improving performance. In addition, there is no need to use a trench type buried gate structure, achieving a simple process and being compatible with existing planar gate processes.

The invention relates to a low-voltage line emergency power supply non-inductive access system, which comprises a Rogowski coil sensor I, a Rogowski coil sensor II, an emergency power supply switching switch QF2, an emergency power supply non-inductive access auxiliary device, a puncture type wire clamp with an insulating handle and an overhead conductor, on the load side of a low-voltage line, a puncturing type wire clamp with an insulating handle directly penetrates through a wire insulating layer, and an overhead wire, an emergency power supply switching switch QF2 and an emergency power supply are electrically connected to establish a temporary conductive channel; the central processing unit compares whether the phase sequence, phase, voltage and frequency of the power grid main line are matched with those of the emergency power supply, if yes, the central processing unit outputs a signal to control an emergency power supply on / off switch QF2 to be switched on through a remote control output module, so that the emergency power supply supplies power to the load side of the low-voltage line; an emergency power supply grid-connected loop is formed on the premise of not interrupting power supply of a main line of a power grid, zero-power-failure access of the emergency power supply is achieved, access is rapid and convenient, and reliability is high.

The application provides a preparation method of a device based on electrostatic field induced microparticle patterning directional assembly, comprising the following steps: preparing a pre-patterning electrode and printing or depositing the pre-patterning electrode on a substrate to obtain a pre-patterning substrate; uniformly laying microparticles on a lower substrate and placing the pre-patterning substrate between the lower substrate and an upper substrate; forming a controllable electric field between the upper substrate and the lower substrate through corona discharge, and driving the microparticles to deposit on non-conductive areas of the pre-patterning substrate by electric field force to form a patterning conductive channel corresponding to the electrode; and packaging the substrate on which the patterning directional assembly is completed. The application realizes template-free, contact-free and solvent-free patterning directional assembly of microparticles, and has the advantages of simple process, low cost, high efficiency and strong universality. The application can be used to prepare multiple devices such as photoelectric detectors, pressure sensors and flexible electronics, and has important industrial application value.

The invention relates to the technical field of thermoelectric functional materials, in particular to an SWCNT / MBene composite thermoelectric thin film and a preparation method and application thereof. An acidified P-type doped one-dimensional SWCNT is used as a substrate, two-dimensional MBene is loaded, a one-dimensional / two-dimensional mixed structure is formed through hot pressing, and the thin film of a heterojunction structure is obtained. Wherein the one-dimensional SWCNT provides a good flexible skeleton and a conductive channel, the two-dimensional MBene nanosheet provides a Seebeck coefficient to enhance the thermoelectric conversion performance of the film, and the two-dimensional SWCNT and the two-dimensional MBene nanosheet cooperate to effectively balance the flexibility, the stability and the power factor of the thermoelectric film. Meanwhile, the preparation process is simple and controllable, large-scale production is easy, and damage to material performance and restriction on production efficiency by a complex process are avoided. The composite thermoelectric thin film is good in flexibility and excellent in performance, the preparation process is suitable for large-scale production, the composite thermoelectric thin film has wide application prospects in the fields of miniature thermoelectric power generation devices, flexible electronic temperature control devices and the like, and a new scheme is provided for practical application of high-performance thermoelectric materials.

The invention discloses a three-dimensional micro-LED chip with a novel heat dissipation structure and a dielectric layer manufacturing method. The chip comprises a silicon substrate, a red micro-led, a green micro-led and a blue micro-led, the silicon substrate, the red micro-led, the green micro-led and the blue micro-led are sequentially stacked, and a dielectric layer is arranged between any two of the silicon substrate, the red micro-led, the green micro-led and the blue micro-led; a plurality of copper-plated through holes are formed in the dielectric layer, and the conductive circuits of the red micro-LED, the green micro-LED and the blue micro-LED penetrate through the copper-plated through holes and then are connected with the silicon substrate; the method comprises the following steps: patterning a diamond film and plating copper on a through hole in manners of etching, electroplating and the like, so as to manufacture a light-transmitting and heat-conducting dielectric layer; through the stacking structure of the silicon substrate and the three-color micro-LEDs and the design of the copper-plated through holes in the dielectric layer, heat conduction and electric conduction channels are formed in the vertical direction, meanwhile, efficient heat dissipation and electrical isolation are achieved through the diamond film, the problems that in a traditional scheme, heat dissipation paths are insufficient, materials are contradicted, and the light emitting rate is reduced are solved, and the light emitting efficiency is improved. The LED lamp has the advantages of improving a vertical heat dissipation path, giving consideration to electrical isolation and thermal conductivity and improving light emitting efficiency.

The application provides a semiconductor device, a preparation method, a memory and an electronic device. The semiconductor device comprises: a first semiconductor structure, a first isolation layer and a second semiconductor structure which are sequentially stacked along a first direction; wherein the first direction is perpendicular to the first isolation layer; the first semiconductor structure comprises at least one first standard unit, each first standard unit comprises two sub-units, and each sub-unit comprises two first transistors; the second semiconductor structure comprises at least one second standard unit, each second standard unit comprises two second transistors; a power supply track is located between the two first transistors of each sub-unit, and the power supply track is connected with a first source-drain structure of the first transistor; and a conductive channel is located in the second semiconductor structure, a first end of the conductive channel is connected with a power supply metal structure in the second semiconductor structure, and a second end of the conductive channel extends along the first direction and is connected with the power supply track through the first isolation layer.

The present invention relates to the field of semiconductor field-effect transistors, and more specifically, to a MISFET with a bidirectional channel depletion and integrated diode. The device comprises an n-type gallium oxide substrate, an n-type gallium oxide epitaxial layer formed on the front surface of the n-type gallium oxide substrate, p-type semiconductor material layers formed in rows within and on the upper surface of the n-type gallium oxide epitaxial layer, and a gate electrode, a source electrode, and a drain electrode formed between or above the region between two rows of p-type semiconductor material layers. The portion of the p-type semiconductor material layer located within the n-type gallium oxide epitaxial layer has a multi-step structure, and the region of the p-type semiconductor material layer located between the upper surfaces of the n-type gallium oxide epitaxial layer serves as the gate region. Vertical conductive channels are formed on both sides of the gate region, and a horizontal conductive channel is formed between the vertical conductive channels. The thickness of the horizontal conductive channel is no greater than the height of the vertical conductive channel. The device is a junction enhancement type device capable of simultaneously achieving bidirectional channel depletion and an integrated diode.

This application discloses a semiconductor device and its manufacturing method. The semiconductor device includes a first region and a second region. The second region contains a plurality of transistors. Each transistor includes: a semiconductor layer and a source region and a drain region, the source region and drain region being located in the semiconductor layer and close to its surface; a second gate dielectric layer located on the surface of the semiconductor layer; a gate conductor located on the second gate dielectric layer; a second sidewall located on the side surface of the gate conductor on the second gate dielectric layer; and a plurality of conductive channels respectively connected to the source region, drain region, gate conductor, and second sidewall as lead-out structures. The second sidewall includes a field plate, and the conductive channels of the field plate are connected to the conductive channels of the drain region. This application improves the breakdown voltage of the device without increasing the channel on-resistance.

The invention discloses a preparation method of a solid-state battery with a silicon-based negative electrode. The preparation method comprises the following steps: preparation of pre-lithiated silicon particles, preparation of a conductive network precursor, preparation of a Si-C composite negative electrode layer, preparation of a composite solid-state electrolyte and battery assembly. Li3PS4 is used as a main electrolyte, LiI and Li3PS4 form a solid solution with low grain boundary impedance, so that the activation energy is reduced from 0.35 eV to 0.28 eV, then Li3N is added as an interface modifier, N3-contained in the Li3N can react with Si-OH on the surface of silicon to form a stable Si-N bond, and the interface impedance is greatly reduced; then CNT is used as an electronic conductive main body, and after the CNT is modified by a coupling agent, amino groups on the surface of the CNT and P in Li3PS4 can form stable C-P bonds, so that Li3PS4 particles are uniformly loaded on the surface of the CNT, and an electron-ion double-conductive channel is formed; and moreover, a lithium naphthalene tetrahydrofuran solution is adopted to carry out mild pre-lithiation on the silicon particles, so that active lithium required by formation of an SEI layer is accurately supplemented, excessive lithium is prevented from reacting with electrolyte, lithium loss is reduced, and the utilization rate of lithium is increased to 90% or above.

The present invention discloses a true random number generator based on a photoelectrically controlled memristor and a preparation method. The true random number generator comprises: a photoelectrically controlled memristor, an illumination control module, a pulse generation module, and a monitoring module. The illumination control module is configured to provide illumination to the photoelectrically controlled memristor under the control of the monitoring module. The pulse generation module is configured to provide a preset pulse signal to the photoelectrically controlled memristor. When illumination is present or illumination meets preset conditions, the photoelectrically controlled memristor generates random numbers based on the preset pulse signal, using the on / off state of the conductive channel in the resistive switching layer as a random entropy source. When illumination is absent or illumination does not meet the preset conditions, random number generation ceases. The monitoring module monitors the random numbers output by the photoelectrically controlled memristor and, if the same random number is output multiple times in a row, sends a control signal to the illumination control module to cause it to turn off illumination or provide illumination that does not meet the preset conditions. The present invention can implement self-testing and on / off control of the true random number generator.

This invention discloses a method for preparing a transparent electrode film, the transparent electrode film itself, and its applications, relating to the field of conductive thin films. The method involves stacking a substrate, a transparent crystalline thin layer, and several spaced metal thin layers. A voltage is applied to the metal thin layers, causing the transparent crystalline metal thin layers to break down and form fine, filamentary conductive channels. Annealing is then performed to allow metal atoms in the metal thin layers to diffuse into these filamentary conductive channels, forming conductive fibers. The remaining metal thin layers are then removed to form the transparent electrode film. The substrate can be an epitaxial wafer for an ultraviolet LED, detector, or solar cell; the transparent crystalline thin layers can be AlN, GaN, or Al... x Ga （1‑x） The metal layers are made of materials such as N, Al2O3, or TiO2, with thin metal layers of Au, Ag, Ti, Cu, or Al. They possess both high conductivity and high transparency, have a simple structure, and are easy to mass-produce. As a key component of ultraviolet optoelectronic devices, they can improve the photoelectric conversion efficiency of the devices and can be applied in many fields such as flexible electronics and transparent smart devices.

The invention relates to the technical field of flow battery energy storage, in particular to a vertically-oriented conductive fiber reinforced composite bipolar plate which comprises a resin matrix, conductive filler and vertically-oriented high-conductive fibers, the vertically-oriented high-conductive fibers are uniformly distributed perpendicular to two working surfaces of the bipolar plate to form a continuous vertical conductive channel, and the vertical conductive channels are communicated with the resin matrix. The invention also provides a specific preparation method of the bipolar plate. The defect of conductivity anisotropy of an existing bipolar plate is overcome, a vertical orientation high-conductivity fiber channel is accurately constructed through a weaving or winding matched cutting process, the conductivity in the thickness direction is improved by 80-200%, the difference between the conductivity in the thickness direction and the conductivity in the facing direction is reduced to be within 15%, and the contact resistance and the internal resistance of a galvanic pile are greatly reduced.

The utility model discloses an anti-loosening suspension insulator, which relates to the technical field of communication engineering, and comprises a central column, an abutting ring is fixedly arranged at the bottom of the outer wall of the central column, a plurality of insulating ceramic rings are movably sleeved on the central column above the abutting ring, a threaded column is fixedly arranged at the top of the central column, and the threaded column is fixedly connected with the central column. The top of the threaded column is fixedly provided with an anti-loosening assembly which tightly presses the plurality of insulating ceramic rings on the outer wall of the central column. The main body structure comprises the central column, the outer wall of the central column is sleeved with the multiple insulating ceramic rings, the side faces of the multiple insulating ceramic rings are provided with the self-cleaning assemblies based on wind power, and the self-cleaning assemblies can scrape away sundries possibly attached to the outer walls of the multiple insulating ceramic rings irregularly through high-altitude wind power. The problems that a conductive channel is possibly formed on the surface of the insulator due to pollutant accumulation, leakage current is increased, the insulation effect is reduced, workers need to climb high frequently, and the cleaning process of the suspension insulator is high in risk and time-consuming are solved.

This invention relates to the field of infrared emitting composite materials, specifically to a conductive infrared emitting composite material and its preparation method. The preparation method is as follows: AB2O is prepared. 4‑δ Spinel material; the prepared AB2O 4‑δ Spinel material, carbonaceous material, and ceramic material are mixed and then sandwiched together with carbonaceous material to form a pressed tablet. Microwave plasma discharge treatment is used to activate the infrared emission performance of the plasma elements and excite the conductivity channels, resulting in a conductive composite material with high infrared emissivity. This composite material solves the technical problems of limited infrared emission capability, single excitation method, and complex preparation method of existing composite ceramic materials, and has broad application prospects in the field of tunable photoelectric synergistic excitation of infrared radiation.

The invention provides a monolithic three-dimensional integrated photoelectric detector and a preparation method thereof. The preparation method comprises the following steps: forming an isolation passivation layer on a readout integrated circuit serving as a substrate of the photoelectric detector; forming a source conductive through hole, a drain conductive through hole and a bottom gate contact hole in the isolation passivation layer; a conductive material is deposited and planarized, the source electrode conductive through hole, the drain electrode conductive through hole and the bottom gate contact hole are filled with the conductive material, the conductive material in the source electrode conductive through hole forms a source electrode conductive channel, the conductive material in the drain electrode conductive through hole forms a drain electrode conductive channel, and the conductive material in the bottom gate contact hole forms a bottom gate electrode layer; forming a bottom gate dielectric layer on the planarized surface, and forming a channel layer on the bottom gate dielectric layer; forming a source electrode and a drain electrode, wherein the source electrode and the drain electrode are electrically connected with the connecting port of the read-out integrated circuit through a source electrode conductive channel and a drain electrode conductive channel respectively; and forming a top gate structure which comprises a top gate dielectric layer and a photosensitive layer.

The application provides a forming method of a conductive channel of a resistive random access memory (RRAM), comprising the following steps: firstly, connecting a RRAM element to a drain of a field effect transistor; and secondly, applying a forming voltage to a gate, the drain and a source of the field effect transistor until a conductive channel of the RRAM element is formed, wherein the forming voltage of the gate and the drain is a pulse voltage with opposite peak variation trends, the forming voltage of the source is constant, and the field effect transistor works in a saturation region. The application also provides a RRAM unit and a RRAM for implementing the forming method of the conductive channel of the RRAM, comprising a RRAM element and a field effect transistor, and the RRAM element is connected to the drain of the field effect transistor. By using the special pulse form of the gate voltage and the drain voltage and the superimposed current limiting resistor and other optimization means, the problems of uncontrollable current, excessive electric field, large device damage, low yield and MOS transistor failure in the prior art can be solved.

The invention provides a silicon ultraviolet light photodiode and a manufacturing method thereof. The silicon ultraviolet light photodiode comprises an N-type region which is formed below the upper surface of a silicon substrate and is in contact with the upper surface of the silicon substrate; the P + region is formed below the N-type region and is in contact with the N-type region; the deep N-type well region is formed below the P + region and is in contact with the P + region; the N-type conductive channel is connected to the deep N-type well region and is used for enabling non-ultraviolet current caused by electron-hole pairs formed in the deep N-type well region to flow out; according to the heat treatment process step, the P-type doped impurities in the P + injection region are diffused and compensated for the N-type doped impurities in the N-type injection region, so that the depth of the N-type region is controlled to be the preset depth, and the ultraviolet light sensitivity is enhanced.

The invention relates to a method for manufacturing a bipolar or multipolar conductor for a medical device, comprising the following process steps: a) Providing a cable including an external insulation, an inner lumen, at least one electrically conductive channel; b) Provide at least one conductive paste; c) Creating at least one contact opening near the distal end of the cable, such that at least one electrically conductive channel can be selectively electrically contacted via the contact opening; d) Filling the contact opening with the conductive paste, wherein the volume of conductive paste filled is 105% to 200% of the capacity volume of the contact opening in order to create a protrusion of conductive paste protruding from the contact opening; e) Providing at least one electrode, wherein the electrode has a contact surface with a contact cross-sectional area; f) Positioning the electrode at the position of the contact opening, with the contact surface oriented towards the contact opening; g) Moving the positioned electrode towards the contact opening so that the excess conductive paste is introduced between the outer insulation and part of the contact surface during the movement; h) Curing of the conductive paste to fix the electrode electrically to the electrically conductive channel.

The invention provides a multi-layer coated lithium manganese iron phosphate material and a preparation method and application thereof, and the preparation method comprises the following steps: mixing a lithium manganese iron phosphate precursor and a carbon source, and carrying out primary sintering to obtain a primary sintered material; mixing the primary sintered material, an acidic polymer monomer, an initiator and a first solvent, and performing solid-liquid separation and drying to obtain a coating material; or carrying out mixing and heat treatment on the first sintered material obtained in the step (1) and a bio-based organic acid solution to obtain a coating material; and carrying out mixing and secondary sintering on the coating material and carbon nanotubes to obtain the multi-layer coated lithium manganese iron phosphate material. According to the preparation method, the surface crystal structure of the lithium iron phosphate material is stabilized by firstly preparing the carbon coating layer, inhibiting manganese dissolution and then preparing the chelated carbon coating layer, and finally, the porous carbon coating layer is coated to provide an efficient conductive channel, so that the battery capacity, the cycle performance and the like are improved.

A photoelectric packaging structure, manufacturing method, and camera module are provided. The structure includes a plastic packaging module, a photosensitive chip, and a substrate module. The plastic packaging module includes a packaging body for covering the photosensitive chip. The substrate module includes a dielectric layer and a first multilayered wiring structure having a first and a second wiring layer. The first wiring layer includes a first conductive portion and a first conductive wiring pattern. One side of the first conductive portion contacts the connection pad of the photosensitive chip. The second wiring layer includes a second conductive portion and a second conductive wiring pattern. The second conductive wiring pattern is electrically connected to another side of the first conductive portion. The first and second conductive portions constitute a first conductive channel. The photosensitive chip is electrically connected to the first and second wiring layers through the first conductive channel.

The invention belongs to the technical field of flexible electronics and intelligent sensing, and discloses a flexible carbon fiber sensor with multifunctional sensing capability and an application method thereof. The flexible carbon fiber sensor comprises a flexible carbon fiber substrate layer for providing mechanical support and a conductive channel; the metal sensing coating layer covers the surface of the flexible carbon fiber substrate layer and is used for enhancing conductivity and serving as an electrode network; the sensing unit is integrated on the metal sensing coating layer and is used for sensing at least one parameter of pressure, temperature, humidity, air pressure and speed; and the protection packaging layer covers the surfaces of the metal sensing coating layer and the sensing units and is made of a PU (Polyurethane), PET (Polyethylene Terephthalate) or silica gel material, so that the environmental interference resistance is improved. According to the invention, the heterogeneous sensing element is integrated in a high-flexibility module, the technical limitations of single function, structural rigidity, environmental tolerance and the like of the existing sensor are broken through, and the sensor can be widely applied to a detection field domain requiring high bending, high adaptability and multiple functions.

The invention relates to the technical field of metal material processing, and discloses a preparation method of a copper-silver alloy for a high-strength and high-conductivity new energy wire harness, which comprises the following steps: inhibiting segregation caused by copper-silver density difference and refining grains by using a rotating traveling wave magnetic field and a high-energy ultrasonic beam through magneto-acoustic double-field coupling rheological continuous casting. And then under a cryogenic environment, special modified polysiloxane-graphene hybrid conductive gel is matched for large-strain drawing, the gel keeps semi-solid lubrication at a low temperature, and a conductive channel is established. And finally, establishing an axial temperature gradient by utilizing the temperature difference between the cryogenic state of the wire rod and the contact electrode area, and applying a unipolar electric pulse to trigger the Thomson effect. According to the process, a Thomson heat flow item is used for correcting a Joule thermal field, and electron wind power is used for driving silver atoms to be directionally separated out along high-density dislocation while overheating softening of a copper matrix is restrained. The method effectively solves the problem that the strength conductivity is inverted due to solidification segregation and traditional heat treatment, and the comprehensive performance of the copper-silver alloy is synchronously improved.