784 results about "Electrode Grid" patented technology

A proximity-based mutually capacitance-sensitive touchpad that is disposed directly beneath a keypad keymat of a mobile telephone, wherein posts associated with each key pass through a mutually capacitance-sensitive sensor electrode grid of the touchpad such that the keypad posts do not interfere with touchpad detection and tracking of a pointing object that moves along the keypad surface, to thereby enable touchpad data entry, cursor control, and scroll bar control on a display of the mobile telephone, wherein the keypad posts actuate mechanical switches underneath the touchpad.

In a substrate vertical transistor cells are formed and are arranged, in a transistor cell array, row by row in an x direction and column by column in a y direction. Lower source / drain regions of the transistor cells are connected to a common connection plate. Upper source / drain regions of the transistor cells impart a contact connection for instance to a storage capacitor of a DRAM memory cell. Active trenches running between the transistor cells with word lines are formed along the x direction. The word lines form gate electrodes in sections. A potential at the gate electrode controls a conductive channel in an active region arranged in each case between the upper and the lower source / drain connection region. According to the invention, the active regions of adjacent transistor cells are sections of a contiguous layer body and are connected to one another. An accumulation of charge carriers in the active region and floating body effects are avoided without increasing the area requirement of a transistor cell.

One embodiment of the present invention provides a method for fabricating solar cells. During operation, an anti-reflection layer is deposited on top of a semiconductor structure to form a photovoltaic structure, and a front-side electrode grid comprising a metal stack is formed on top of the photovoltaic structure. The metal stack comprises a metal-adhesive layer comprising Ti or Ta, and a conducting layer comprising Cu or Ag situated above the metal-adhesive layer.

The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and a drain electrode, wherein the active layer is an oxide semiconductor layer, a resistance layer having an electric conductivity that is lower than an electric conductivity of the active layer is provided between the active layer and at least one of the source electrode or the drain electrode, and an intermediate layer comprising an oxide comprising an element having a stronger bonding force with respect to oxygen than that of the oxide semiconductor in the active layer is provided between the active layer and the resistance layer.

One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

An optoelectronic device comprising at least one nanostructure-film electrode is discussed. The optoelectronic device may further comprise a different material, such as a polymer, to fill pores in the nanostructure-film. Additionally or alternatively, the optoelectronic device may comprise an electrode grid superimposed on the nanostructure-film.

A demultiplexer disposed between a touch sensor circuit and electrodes of a touchpad electrode grid, wherein instead of using the touch sensor circuitry to directly drive each electrode, the touch sensor circuitry instead transmits control signals to the demultiplexer, wherein the control signals instruct the demultiplexer to select a subset of the plurality of electrodes to be driven, and thereby perform object detection and tracking, wherein by using the demultiplexer to drive electrodes, a much greater number of electrodes can be driven by the touch sensor circuit, thereby increasing the effective size of a touchpad that can be controlled by the touch sensor circuitry.

An object is to obtain a semiconductor device with improved characteristics by reducing contact resistance of a semiconductor film with electrodes or wirings, and improving coverage of the semiconductor film and the electrodes or wirings. The present invention relates to a semiconductor device including a gate electrode over a substrate, a gate insulating film over the gate electrode, a first source or drain electrode over the gate insulating film, an island-shaped semiconductor film over the first source or drain electrode, and a second source or drain electrode over the island-shaped semiconductor film and the first source or drain electrode. Further, the second source or drain electrode is in contact with the first source or drain electrode, and the island-shaped semiconductor film is sandwiched between the first source or drain electrode and the second source or drain electrode. Moreover, the present invention relates to a manufacturing method of the semiconductor device.

A solar cell comprising at least one nanostructure-film electrode is discussed. The solar cell may further comprise a different conducting material, such as a conducting polymer, to fill pores in the nanostructure-film. Additionally or alternatively, the solar cell may comprise an electrode grid superimposed on the nanostructure-film. Likewise, the solar cell may have a single or multiple active layer(s), wherein nanostructure-film(s) may form at least semi-transparent anode(s) and / or cathode(s) through use of buffer layer(s).

The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched.

The invention relates to a TFT-LCD pixel structure, a manufacturing method and a broken wire repairing method. The TFT-LCD pixel structure comprises a plurality of pixel cells limited by a grid wire and a data wire, wherein a thin-film transistor and a pixel electrode are formed in each pixel cell, a first public electrode wire is formed on the lower side of the grid wire, a second public electrode wire is formed on the upper side of the grid wire, a first light blocking strip is formed on the left side of the pixel cell, and a second light blocking strip is formed on the right side of the pixel cell; the first public electrode wire, the second public electrode wire, the first light blocking strip and the second light blocking strip form an integrated structure and form an annular structure on the periphery of the pixel cell; and the second public electrode wire positioned on the upper side of the grid wire is connected with the first public electrode positioned on the lower side of the grid wire through a connecting electrode. The TFT-LCD pixel structure can be repaired quickly and efficiently, and has high success rate.

A proximity-based mutually capacitance-sensitive touchpad that is disposed directly beneath a keypad keymat of a mobile telephone, wherein posts associated with each key pass through a mutually capacitance-sensitive sensor electrode grid of the touchpad such that the keypad posts do not interfere with touchpad detection and tracking of a pointing object that moves along the keypad surface, to thereby enable touchpad data entry, cursor control, and scroll bar control on a display of the mobile telephone, wherein the keypad posts actuate mechanical switches underneath the touchpad.

An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode and a drain electrode, and gate electrodes shaped like a comb or a mesh, which are provided at intervals approximately in the central part of the organic semiconductor layer approximately parallel to the source electrode and the drain electrode. The organic semiconductor layer consists of an electric field luminescent organic semiconductor material such as compounds of naphthalene, anthracene, tetracene, pentacene, hexacene, a phthalocyanine system compound, an azo system compound, a perylene system compound, a triphenylmethane compound, a stilbene compound, poly N-vinyl carbazole, and poly vinyl pyrene.

The invention discloses a process for manufacturing a solar cell by twice screen printing and grooving, which is used for manufacturing the solar cell by twice electrode printing and comprises a grooving process and a twice printing process, wherein the grooving process comprises the step of performing grooving on an electrode grid line area on the surface of a silicon wafer so as to form an etched groove in the electrode grid line area; and the twice printing process comprises the following steps of: a, primary electrode printing, namely, filling printing electrode paste into the etched groove and performing drying to form a first layer of electrode in the etched groove; and b, secondary electrode printing, namely, printing the electrode on the outer surface of the first layer of electrode so as to form a second layer of electrode in the electrode grid line area on the surface of the silicon wafer. The solar cell manufactured by the method has relatively lower series resistance, a selective emitter and relatively higher conversion efficiency, and can reduce shading loss; and the electrode paste is difficult to spread in a sintering process.

A capacitance sensitive proximity and touch-sensitive detection device having an XY electrode grid sensor, wherein a compensation matrix is created when the capacitance sensitive touchpad is installed within a PIN Entry Device (PED), wherein the compensation matrix enables the capacitance sensitive touchpad to compensate and be balanced for the operating environment of the PED, and wherein physical keys of a keypad can be also be individually identified as an actuated key by using a unique “key profile” for each key, and wherein the insertion of a foreign conductive and / or dielectric material such as an intruding sensor in proximity of the XY electrode grid sensor of the touchpad will cause an imbalance in the electrodes on the capacitance sensitive proximity and touch-sensitive detection device, thereby alerting detection circuitry that tampering has occurred with the PED.

An organic light emitting display device includes a light shield layer formed on a substrate and a buffer layer formed on an entire surface of the substrate, an oxide semiconductor layer and first electrode formed on the buffer layer, a gate insulation film and gate electrode formed on the oxide semiconductor layer while being deposited to expose both edges of the oxide semiconductor layer, an interlayer insulation film formed to expose both the exposed edges of the oxide semiconductor layer and the first electrode, source and drain electrodes connected with one edge and the other edge of the oxide semiconductor layer, respectively, and a protective film formed to cover the source and drain electrodes while exposing a region of the first electrode so as to define a luminescent region and a non-luminescent region.

A method and neurostimulation control system for programming electrodes disposed adjacent tissue of a patient. A fixed spatial grid of electrode positions is generated. One of the electrodes is designated as a reference electrode to be currently examined, and assigned to one of the electrode grid positions. One or more previously unassigned ones of the electrodes neighboring the reference electrode are assigned respectively to one or more of the electrode grid positions immediately surrounding the electrode grid position to which the reference electrode is assigned. The electrodes are programmed based on the assignment of the electrodes to the electrode grid positions.

There is provided a thin-film transistor forming substrate in which at least one of a source electrode, a drain electrode, and a gate electrode, which are constituent elements of a thin film transistor, or a first electrode is included on a face of a substrate main body that is located on any one side in a thickness direction. An embedded wiring that is connected to one of the source electrode, the drain electrode, the gate electrode, and the first electrode is buried inside the substrate main body.

A transistor having a source region and a drain region which are separately formed in a substrate, a trench which is defined in the substrate between the source region and the drain region, and a gate electrode which is formed in the trench. The gate electrode includes a first electrode buried over a bottom of the trench; a second electrode formed over the first electrode; and a liner electrode having an interface part which is positioned between the first electrode and the second electrode and a side part, which is positioned on sidewalls of the second electrode and overlaps with the source region and the drain region.

A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source / drain electrodes are then formed on the insulating layer and the ohmic contact layer.

There are provided an oxide TFT, a method for fabricating a TFT, an array substrate for a display device having a TFT, and a method for fabricating the display device. The oxide thin film transistor includes: a gate electrode formed on a substrate; a gate insulating layer formed on the entire surface of the substrate including the gate electrode; an active layer pattern formed on the gate insulating layer above the gate electrode and completely overlapping the gate electrode; an etch stop layer pattern formed on the active layer pattern and the gate insulating layer; and a source electrode and a drain electrode formed on the gate insulating layer including the etch stop layer pattern and the active layer pattern and spaced apart from one another, and overlapping both sides of the etch stop layer pattern and the underlying active layer pattern.

The present invention relates to a solar cell with an electroplated metal grid. One embodiment of the present invention provides a method for fabricating solar cells. During operation, an anti-reflection layer is deposited on top of a semiconductor structure to form a photovoltaic structure, and a front-side electrode grid comprising a metal stack is formed on top of the photovoltaic structure. The metal stack comprises a metal-adhesive layer comprising Ti or Ta, and a conducting layer comprising Cu or Ag situated above the metal-adhesive layer.

A semiconductor device includes a semiconductor device may include, but is not limited to, a semiconductor substrate, an isolation electrode, a gate electrode, a gate insulating film, and a first insulating film. The semiconductor substrate has a first groove and a second groove. An isolation electrode is positioned in the first groove. The gate electrode is positioned in the second groove. The gate insulating film is adjacent to the gate electrode. The first insulating film is adjacent to the isolation electrode. The isolation electrode is greater in threshold voltage than the gate electrode.

The invention relates to selective diffusion technology for a crystalline silicon solar cell, which comprises high-concentration phosphorous diffusion in a facade electrode grid line area and low-concentration phosphorous diffusion out of the facade electrode grid line area, and comprises the following steps: after a silicon chip is cleaned and made to be velvet, preparing a layer of dense silicon dioxide film on the silicon chip as a diffusion blocking layer, then selectively removing an oxidation film in the electrode grid line area by adopting laser grooving technology and forming a groove with a definite depth, and performing the high-concentration phosphorous diffusion to form heavy doping in the electrode area. The selective emitter solar cell prepared by the technology not only has high short wave efficiency, but also has lower electrode resistance and contact resistance; and compared with the conventional corrosion electrode figures adopting photoetching technology, the technology has the advantages of low equipment cost and high production efficiency, and is applicable to industrialized production of the crystalline silicon solar cell.

In one embodiment, a semiconductor device includes a semiconductor substrate having a lower layer and an upper layer overlying the lower layer. The upper layer is arranged and structured to form first and second active regions that are spaced apart from each other and protrude from an upper surface of the lower layer. A third active region of a bridge shape is distanced vertically from the upper surface of the lower layer and connects the first and second active regions. The device further includes a gate electrode, which is formed with a gate insulation layer surrounding the third active region, so that the third active region functions as a channel.

A system and method for providing security for a point-of-sale (POS) terminal or an encrypting PIN pad (EPP) by protecting the signals that could be directly probed on a touch sensor electrode grid or remotely probed such as through power supply signals or RF emissions, wherein the drive signals are randomly applied to drive electrodes in order to prevent tracking of drive signals, and charge is injected on sense lines to hide PIN data.

A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.

The invention discloses a low-cost efficient solar cell electrode grid line structure which comprises two parts of main grid lines and thin grid lines, wherein the main grid lines are symmetrically distributed by taking a silicon wafer center as a center, the thin grid lines are equidistantly distributed in the way of being vertical to the main grid lines in parallel, the main grid lines adopt a sectional type design, and all the subsections are connected by thin lines. The electrode grid line structure adopts a design that the grid lines are thinned, the shading areas of the grid lines are reduced, the number of the grid lines is increased so that the lateral transmission loss of a carrier is lowered and the collection efficiency of the carrier is increased; moreover, the main grid lines are divided into sections, thinned and hollowed out additionally, so the silver usage is reduced, the manufacturing cost of a solar cell is reduced, meanwhile, the contact area compound is lowered, accordingly, the open-circuit voltage of the solar cell is increased, and the cost is greatly lowered; and compared with the widespread products of the industry, in the design scheme which is obtained by optimizing the scheme, the shading area of the grid lines on the front side of the solar cell is reduced by about 1%, the conversion efficiency is improved by 0.2-0.3%, and the silver paste consumption is reduced by about 35%.

A capacitance sensitive touchpad, wherein X and Y electrode grids are separated by a resilient but deformable material, such as a gel or other rubber-like material, wherein an object coming into contact with the touchpad causes the resilient material between the electrode grids to be compressed, and wherein the touchpad is capable of determining the change in distance between the electrode grids and thereby determine the amount of force being applied to the touchpad to cause the detected compression of the resilient material.

Disclosed is a thin film transistor including a gate electrode on a substrate. A gate dielectric layer is disposed on the gate electrode and the substrate, and source / drain electrodes are disposed on the gate dielectric layer overlying two edge parts of the gate electrode. A channel layer is disposed on the gate dielectric layer overlying a center part of the gate electrode, and the channel region contacts the source / drain electrodes. An insulating capping layer overlies the channel layer, wherein the channel layer includes an oxide semiconductor.