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56results about How to "Reduce carrier density" patented technology
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Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
ActiveUS20070093073A1Improve device performanceLarge parameter spacePolycrystalline material growthSemiconductor/solid-state device manufacturingNucleationBiology
A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
Owner:JAPAN SCI & TECH CORP
Semiconductor integrated circuit
InactiveUS8547771B2Reduce power consumptionReduce delaysTransistorPower consumption reductionElectricityHemt circuits
To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor integrated device
InactiveUS20120032730A1Reduce power consumptionReduce operational latencyTransistorPower consumption reductionNODALElectricity
To reduce power consumption of a semiconductor integrated circuit and to reduce delay of the operation in the semiconductor integrated circuit, a plurality of sequential circuits included in a storage circuit each include a transistor whose channel formation region is formed with an oxide semiconductor, and a capacitor whose one electrode is electrically connected to a node that is brought into a floating state when the transistor is turned off. By using an oxide semiconductor for the channel formation region of the transistor, the transistor with an extremely low off-state current (leakage current) can be realized. Thus, by turning off the transistor in a period during which power supply voltage is not supplied to the storage circuit, the potential in that period of the node to which one electrode of the capacitor is electrically connected can be kept constant or almost constant. Consequently, the above objects can be achieved.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device
ActiveUS20110278564A1Lower average currentReduce trafficTransistorSolid-state devicesSemiconductor materialsEngineering
An n-channel transistor or a p-channel transistor provided with a second gate electrode for controlling a threshold voltage in addition to a normal gate electrode is used for a complementary logic circuit. In addition, an insulated gate field-effect transistor with an extremely low off-state current is used as a switching element to control the potential of the second gate electrode. A channel formation region of the transistor which functions as a switching element includes a semiconductor material whose band gap is wider than that of a silicon semiconductor and whose intrinsic carrier density is lower than that of silicon.
Owner:SEMICON ENERGY LAB CO LTD
All-optical mach-zehnder wavelength converter with monolithically integrated laser
InactiveUS6208454B1Reduce carrier densityExpand the scope of operationLaser detailsLaser optical resonator constructionAudio power amplifierLength wave
A wavelength converter incorporating an on-chip integrated laser for use in an optical system. The converter includes a first port for receiving an optical input signal such as a WDM signal and providing it to an interferometer, and an output port for outputting a signal which is a wavelength-converted version of the input signal. An optical source or laser is fabricated on the chip substrate on which the interferometer is formed for providing operating power to the interferometer. Power levels of the input signal are maintained by adjusting an on-chip semiconductor optical amplifier that receives the optical input signal and provides the amplified signal to the interferometer. In an alternative embodiment, the on-chip optical source is replaced by an on-chip pre-amplifier for an external laser source.
Owner:AVAGO TECH WIRELESS IP SINGAPORE PTE +2
Semiconductor device, method for producing the same, sensor and electro-optical device
ActiveUS20090294765A1Improve device performanceLower resistanceTransistorElectric discharge heatingOptoelectronicsSemiconductor
A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.
Owner:SAMSUNG DISPLAY CO LTD
Liquid crystal display device and touch panel
InactiveUS20140104508A1Improve reliabilityReduce power consumptionSolid-state devicesNon-linear opticsCrystalline oxideLiquid-crystal display
To provide a highly reliable liquid crystal display device including flexible substrates and a crystalline oxide semiconductor film for a backplane. The device includes a flexible first substrate, a flexible second substrate facing the first substrate, and a liquid crystal layer sealed between the substrates with a sealing member. The first substrate is provided with a layer including a transistor, an organic resin film over the transistor, a pixel electrode and a common electrode over the organic resin film, which partly overlap with each other with an insulating film provided therebetween, and an alignment film thereover. The transistor includes a crystalline oxide semiconductor film as a semiconductor layer where a channel is formed. Drying treatment is performed on the layer before the liquid crystal layer is sealed between the substrates, and steps from the drying treatment to sealing of the liquid crystal layer are performed without exposure to the air.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device comprising semiconductor substrate having diode region and IGBT region
ActiveUS20130001639A1Recovery characteristic of be improveIncrease in operationSolid-state devicesSemiconductor/solid-state device manufacturingSemiconductorDevice material
A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region.
Owner:DENSO CORP
Optical element and mach-zehnder optical waveguide element
ActiveUS20140233878A1Increase changeEnlarge regionOptical waveguide light guideNon-linear opticsEngineeringWaveguide
Provided is an optical element including an optical waveguide including a core formed from: a rib part; and a first and second slab parts sandwiching the rib part. The first slab part includes a P-type region, the second slab part includes an N-type region, the rib part includes a P-type region which is in contact with the P-type region provided in the first slab part, and an N-type region which is in contact with the N-type region provided in the second slab part. The rib part includes a top portion which is located above the first and second slab parts and includes an undoped region formed from at least one of an intrinsic region and a low-concentration doping region which is doped at a dopant concentration 1 / 10 or less of a dopant concentration in at least one of the adjacent P-type region and the adjacent N-type region.
Owner:THE FUJIKURA CABLE WORKS LTD
Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
ActiveUS7846757B2Easy to separateImprove device performancePolycrystalline material growthSolid-state devicesManufacturing technologyNucleation
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
Owner:JAPAN SCI & TECH CORP
Transparent conductive laminate and process of producing the same
InactiveUS20030194551A1High transparencyLow resistivityConductive layers on insulating-supportsVacuum evaporation coatingComposite oxideOrganic polymer
A transparent conductive laminate having a completely crystallized, transparent conductive layer on a substrate comprising an organic polymer molding, and a process for producing the same. The transparent conductive layer is excellent in transparency and wet heat confidence and is not excessively low in specific resistivity. The transparent conductive laminate includes a substrate comprising an organic polymer molding having formed thereon a completely crystallized, transparent conductive layer comprising an In.Sn composite oxide having an amount of Sn atom of 1 to 6% by weight based on the total weight of In atom and Sn atom and having a film thickness of 15 to 50 nm, a Hall mobility of 30 to 45 cm<superscript>2> / V.S, and a carrier density of from 2x10<superscript>20> / cm<superscript>3 >to 6x10<superscript>20> / cm<superscript>3>.
Owner:NITTO DENKO CORP
Display device
ActiveUS20110134345A1Long timeReduce carrier densityTelevision system scanning detailsStatic indicating devicesOxide semiconductorLiquid crystal
The time taken to write a signal to a pixel is shortened in a display device. Further, a signal is written at high speed even when high voltage is applied. The display device includes a pixel including a transistor and a liquid crystal element electrically connected to a source or a drain of the transistor. The transistor includes an intrinsic or substantially intrinsic oxide semiconductor as a semiconductor material and has an off-state current of 1×10−17 A / μm or less. The pixel does not include a capacitor. Since it is not necessary to provide a capacitor, the time taken to write a signal can be shortened.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor device, method for producing the same, sensor and electro-optical device
ActiveUS8278136B2Reduce carrier densityReduce resistanceElectric discharge heatingVacuum evaporation coatingPower semiconductor deviceSemiconductor
A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.
Owner:SAMSUNG DISPLAY CO LTD
Thin film transistor, method of manufacturing thin film transistor, display unit, and electronic device
ActiveUS20110180793A1Increase in sizeImprove mobilitySemiconductor/solid-state device manufacturingSemiconductor devicesSemiconductorElectron
There is provided a thin film transistor including: a gate electrode; a pair of source / drain electrodes; a first oxide semiconductor layer provided between the gate electrode, and the pair of source / drain electrodes, and forming a channel; and a second oxide semiconductor layer provided on the pair of source / drain electrodes side of the first oxide semiconductor layer, and having a polarity different from that of the first oxide semiconductor layer.
Owner:JOLED INC
Light-emitting diodes with low temperature dependence
InactiveUS20130299777A1Reduce carrier densityImprove crystal qualitySolid-state devicesSemiconductor/solid-state device manufacturingQuantum efficiencyJunction temperature
A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square.
Owner:RGT UNIV OF CALIFORNIA
Semiconductor device
ActiveUS8664658B2Reduce power consumptionReduced shutdown currentTransistorSolid-state devicesSemiconductor materialsEngineering
An n-channel transistor or a p-channel transistor provided with a second gate electrode for controlling a threshold voltage in addition to a normal gate electrode is used for a complementary logic circuit. In addition, an insulated gate field-effect transistor with an extremely low off-state current is used as a switching element to control the potential of the second gate electrode. A channel formation region of the transistor which functions as a switching element includes a semiconductor material whose band gap is wider than that of a silicon semiconductor and whose intrinsic carrier density is lower than that of silicon.
Owner:SEMICON ENERGY LAB CO LTD
Method of producing group iii-v compound semiconductor, schottky barrier diode, light emitting diode, laser diode, and methods of fabricating the diodes
InactiveUS20080251801A1Reduced n type carrier densityReduce carrier densitySemiconductor/solid-state device manufacturingNanoopticsSchottky barrierGas phase
There are provided a method of producing a group III-V compound semiconductor, a Schottky barrier diode, a light emitting diode, a laser diode and methods of fabricating the diodes, that can achieve a reduced n type carrier density. The method of producing a group III-V compound semiconductor is a method of producing the compound semiconductor by metal organic chemical vapor deposition employing a material containing a group III element. Initially the step of preparing a seed substrate is performed. Then the step of growing a group III-V compound semiconductor on the seed substrate is performed by employing as a group III element-containing material an organic metal containing at most 0.01 ppm of silicon, at most 10 ppm of oxygen and less than 0.04 ppm of germanium.
Owner:SUMITOMO ELECTRIC IND LTD
Manufacturing method for silicon carbide monocrystals
InactiveCN102203330AStable and effective growthInhibit coloringPolycrystalline material growthLiquid-phase epitaxial-layer growthBulk crystalAlloy
Disclosed is a method that can stably manufacture thin films or bulk crystals of SiC monocrystals that are suitable for use in various devices and have low carrier densities of 5 1017 / cm3 or less, and preferably less than 1 1017 / cm3, with liquid phase growth technology using a SiC solution that uses a molten Si alloy as the solvent. As the Si alloy, the method uses an alloy having a composition represented by SixCryTiz wherein x, y and z (each is atom%) satisfy (1) 0.50 < x < 0.68, 0.08 < y < 0.35 and 0.08 < z < 0.35 or (2) 0.40 < x = 0.50, 0.15 < y < 0.40 and 0.15 < z < 0.35. x, y and z preferably satisfy 0.53 < x < 0.65, 0.1 < y < 0.3 and 0.1 < z < 0.3.
Owner:NIPPON STEEL CORP
Liquid crystal display device
ActiveUS20110210327A1Increase speedIncrease the number ofTransistorStatic indicating devicesLiquid-crystal displayHydrogen
An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
Owner:SEMICON ENERGY LAB CO LTD
High extraction efficiency ultraviolet light-emitting diode
ActiveUS9196788B1Reduce carrier densityImprove device efficiencyNanoopticsSemiconductor devicesCharge carrierUltraviolet lights
Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.
Owner:NAT TECH & ENG SOLUTIONS OF SANDIA LLC
Semiconductor device
ActiveUS8797785B2Increasing memory capacity per unit areaMiniaturized and highly sophisticatedDigital storageSemiconductor devicesCapacitorSemiconductor
Provided is a memory device in which memory capacity per unit area is increased without making the manufacturing process complicated. The memory device includes a plurality of memory cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of memory cells includes a switching element and a capacitor including a first electrode and a second electrode. In at least one of the plurality of memory cells, in accordance with a potential applied to one of the plurality of word lines, the switching element controls a connection between one of the plurality of bit lines and the first electrode, and the second electrode is connected to another one of the plurality of word lines.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor laser device
InactiveUS20070009001A1Improve efficiencyEnhancing anti-COD levelOptical wave guidanceLaser detailsQuantum wellRefractive index
A semiconductor laser device includes: on an n-GaAs substrate, an n-type cladding layer of n-(Al0.3Ga0.7)0.5In1.5P, an n-side guide layer of i-In0.49Ga0.51P lattice-matched to GaAs, an active layer having a larger refractive index than the n-side guide layer, and including an In0.07Ga0.93As quantum well layer, a p-side guide layer of i-In0.49Ga0.51P, and a p-type cladding layer of p-(Al0.3Ga0.7)0.5In0.5P. Therefore, the anti-COD level increased, and internal loss minimized.
Owner:MITSUBISHI ELECTRIC CORP
Semiconductor device
InactiveUS20130285698A1Improve execution speedReduce power consumptionPower consumption reductionLogic circuits using elementary logic circuit componentsProgrammable logic deviceSemiconductor
A semiconductor device including a PLD which can increase the execution speed of an application with low power consumption is provided. The semiconductor device includes a programmable logic device and a processor which is not dynamically reconfigured. A memory element of the programmable logic device stores a plurality of pieces of configuration data determined to have high frequency of use by a memory module among configuration data corresponding to a thread. The memory element includes a storage element and a switch in each of a plurality of memory cells. The switch is used for supplying charge whose amount is determined by the plurality of pieces of stored configuration data to the storage element, retaining the charge in the storage element, and discharging the charge from the storage element.
Owner:SEMICON ENERGY LAB CO LTD
Liquid crystal display device
ActiveUS8502226B2Increase speedIncrease the number ofTransistorStatic indicating devicesElectronImpurity
An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor display device
ActiveUS20110242070A1Run at high speedImprove pressure resistanceTelevision system detailsTelevision system scanning detailsDriver circuitElectrical conductor
A semiconductor display device comprising a pixel portion and a signal line driver circuit comprising a first circuit, a second circuit configured to control timing of the sampled serial video signals by the first circuit, and a third circuit configured to perform signal processing on the parallel video signals, wherein the second circuit comprises a first semiconductor element formed over a first substrate, the first semiconductor element including a first semiconductor layer, wherein the third circuit comprises a second semiconductor element formed over a second substrate, the second semiconductor element including a second semiconductor layer, wherein the pixel portion comprises a third semiconductor element formed over the second substrate, the third semiconductor element including a third semiconductor layer, wherein the first semiconductor layer comprises silicon or germanium, and wherein each the second semiconductor layer and the third semiconductor layer has a wider bandgap than the first semiconductor layer.
Owner:SEMICON ENERGY LAB CO LTD
Display device comprising an oxide semiconductor layer
ActiveUS8482005B2Keep for a long timeReduce carrier densityTelevision system scanning detailsStatic indicating devicesSemiconductor materialsDisplay device
The time taken to write a signal to a pixel is shortened in a display device. Further, a signal is written at high speed even when high voltage is applied. The display device includes a pixel including a transistor and a liquid crystal element electrically connected to a source or a drain of the transistor. The transistor includes an intrinsic or substantially intrinsic oxide semiconductor as a semiconductor material and has an off-state current of 1×10−17 A / μm or less. The pixel does not include a capacitor. Since it is not necessary to provide a capacitor, the time taken to write a signal can be shortened.
Owner:SEMICON ENERGY LAB CO LTD
Semiconductor display device
ActiveUS8519990B2Secure high quality of display imageReduce insulation thicknessTelevision system detailsTelevision system scanning detailsDriver circuitElectrical conductor
Owner:SEMICON ENERGY LAB CO LTD
Memory device and semiconductor device
ActiveUS20110228602A1Suppress power consumptionPrevent leakageRead-only memoriesDigital storageComputer hardwareField-effect transistor
One of objects is to provide a nonvolatile memory device in which the occurrence of a defect in data writing is suppressed and whose area can be suppressed, or a semiconductor device including the nonvolatile memory device. A first memory portion including a nonvolatile memory element and a second memory portion (data buffer) for temporarily storing data in verifying operation in which whether the data is correctly written into the first memory portion is verified are provided. Further, the second memory portion includes a memory element and an insulated gate field effect transistor for controlling the holding of charge in the memory element; the off-state current or the leakage current of the transistor is extremely low.
Owner:SEMICON ENERGY LAB CO LTD
Oxide sintered body, sputtering target, and oxide semiconductor thin film obtained using sputtering target
ActiveUS20160348229A1Sufficient amorphous propertyHigh carrier mobilityTransistorVacuum evaporation coatingSputteringIndium
An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content is 0.20 or more and 0.49 or less in terms of Ga / (In+Ga) atomic ratio, and the zinc content is 0.0001 or more and less than 0.08 in terms of Zn / (In+Ga+Zn) atomic ratio. This amorphous oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 4.0×1018 cm−3 or less and a carrier mobility of 10 cm2 / V*s or greater.
Owner:MITSUI MINING & SMELTING CO LTD
Nitride semiconductor light-emitting device and method for producing the same
ActiveUS20150255673A1Reduce probabilityIncrease probabilitySemiconductor/solid-state device manufacturingSemiconductor devicesActive layerMaterials science
A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.
Owner:SHARP FUKUYAMA LASER CO LTD
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