24 results about "Bulk crystal" patented technology

The invention belongs to the technical field of crystalline materials, and relates to a metal-organic coordination polymer crystal material, in particular to a nickel-based double-ligand coordination polymer crystal material as well as a preparation method and application thereof. The chemical formula of the nickel-based double-ligand coordination polymer crystal material is {[Ni (1, 4-bib) (BDC) (H2O) 2]. (1, 4-bib) 0.5. H2O} n, and the preparation method comprises the following steps: dissolving NiCl2. 6H2O, H2BDC and 1, 4-bib in a DMF / water mixed solution with a volume ratio of 1: 1, sealing, carrying out a solvothermal reaction, heating at a constant temperature of 90.0 DEG C for 3 days, and slowly cooling the system to room temperature to obtain a green bulk crystal G-Ni. The nickel-based double-ligand coordination polymer crystal material can be applied to Ag < + > recognition and antibiotic detection.

The present application relates to a kind of Bi-doped rare earth iron garnet body single crystal growth techniques without substrate, comprising the following steps: raw material preparation, melt preparation, melt is cooled to crystal growth temperature, after melt temperature stabilizes, slowly lower the seed crystal rod installed with seed crystal, with melt, seed crystal rotates at a certain speed;During growth, crystal growth is carried out according to the set variable speed cooling curve, and block crystal is obtained after growing for a period of time;Block crystal is pulled out from melt, and slowly cooled to room temperature, and Bi-doped rare earth iron garnet body single crystal is obtained.The present application obtains large-size block single crystal, gets rid of the dependence of existing Faraday optical rotator growth on substrate, and reduces production cost.The present application can obtain Faraday optical rotator which is thinner than existing product thickness at the same wavelength, further reducing the volume.Moreover, multiple surfaces are simultaneously grown, and larger size crystal is obtained.

The utility model relates to the technical field of cleaning devices for cleaning crystal grain wobble plates, in particular to a cleaning device convenient for cleaning bulk crystal grain wobble plates, which comprises a cleaning box, one side of the cleaning box is fixedly connected with a first water outlet valve, the first water outlet valve is fixedly connected with a first water pipe, one side of the cleaning box is fixedly connected with a first water pump, and the first water pump is fixedly connected with a second water pipe. One end of the first water pipe is fixedly connected to a first water pump, and the output end of the first water pump is fixedly connected with a second water pipe. According to the crystal grain wobble plate cleaning device, when a crystal grain wobble plate is cleaned, after a detergent and clear water enter the cleaning box, the water pump I is started, so that water with the detergent in the device flows out of the water outlet valve I, flows into the water pipe II through the water pipe I and the water pump I, then is sprayed out from the high-pressure spray head after passing through the telescopic hose I, and finally flows into the cleaning box; according to the device, the water with the detergent can be recycled, the effect of saving water resources is achieved, and the water with the detergent is fully utilized.

The preparation method comprises the following steps: putting flaky tantalum foil and phosphorus powder into a quartz tube as raw materials, adding iodine powder as a transport agent, and sealing the quartz tube; placing the quartz tube in a beaker filled with dry ice and an acetone solution, and vacuumizing the quartz tube; and putting the sealed quartz tube into a tubular furnace, heating to a reaction temperature of 800-900 DEG C, and preserving heat for 0.8-1.2 hours to obtain the TaP thin layer after the reaction is completed. According to the method, a chemical vapor transport method is adopted, the tantalum foil and the phosphorus powder which are regular in shape grow in a high-vacuum-degree closed environment and serve as raw materials, a small amount of iodine elementary substance is added to serve as a transport agent, the TaP thin layer which is high in quality and good in catalytic performance grows, and compared with pure blocky crystals (211.4 mV), the TaP thin layer has more excellent hydrogen evolution catalytic performance.

The application discloses a kind of base frequency gain and nonlinear frequency conversion integrated monocrystal optical fiber and its preparation method and application, belong to laser technical field.The monocrystal optical fiber covers base frequency gain monocrystal optical fiber and one or more nonlinear monocrystal optical fiber, and is made by the way of first bulk crystal bonding and then integrated drawing, and can be applied to micro visible light, ultraviolet or mid-infrared laser.The application can significantly reduce the influence of spatial walk-off effect in bulk crystal nonlinear process, improve energy conversion efficiency, show the advantages of miniaturization, high efficiency and stable performance, completely break the limitation of traditional laser in conversion efficiency and volume, with good practicability, higher universality and excellent market application prospect.

The invention discloses a rolling shear force-based iron-gallium-tellurium two-dimensional material thin layer preparation method and application thereof, and the method comprises the steps: fixing an iron-gallium-tellurium block crystal to a viscous surface of a viscous adhesive tape, and obtaining the fixed iron-gallium-tellurium block crystal; based on a competitive adhesion principle, repeatedly folding and stripping the fixed iron-gallium-tellurium block crystal to obtain an adhesive tape adhered with an iron-gallium-tellurium two-dimensional material thin layer; pDMS is attached to the surface of a cylindrical rod, rolling is conducted on the adhesive tape attached with the iron-gallium-tellurium two-dimensional material thin layer through rolling shear force, and the iron-gallium-tellurium two-dimensional material thin layer is prepared. According to the method, instantaneous impact force of traditional vertical stripping can be replaced by rolling shearing force, and the thickness and integrity of the iron gallium tellurium two-dimensional material thin layer are improved. The preparation method and application of the iron gallium tellurium two-dimensional material thin layer based on the rolling shear force can be widely applied to the technical field of two-dimensional material preparation.

The invention relates to an infrared polarized photoelectric detector and a preparation method thereof, and belongs to the technical field of photoelectric detection, and the preparation method comprises the following steps: 1, cleaning a substrate; 2, preparing a patterned metal electrode; step 3, preparation and transfer preparation of a two-dimensional material; respectively stripping from the blocky niobium diselenide crystal and the blocky black phosphorus crystal by adopting a mechanical stripping method to obtain a niobium diselenide sheet and a black phosphorus sheet, and respectively transferring the obtained sheets to the surface of a polydimethylsiloxane elastomer; step 4, Van der Waals assembling of the two-dimensional metal electrode; the two niobium diselenide sheets are sequentially transferred to the substrate with the patterned metal electrodes through a micromanipulation system, the two niobium diselenide sheets are aligned with the two patterned metal electrodes respectively and make close contact with the patterned metal electrodes, and a set distance is kept between the two niobium diselenide sheets; step 5; forming a heterojunction structure; the beneficial effects of the invention are that through the NbSe2-BP-NbSe2 structure, the intrinsic anisotropy of black phosphorus is utilized to respond to polarization information, and the infrared polarization detection precision is improved.

The invention belongs to the field of medicine preparation and medicine preparations, and particularly relates to a preparation method and application of ropivacaine or pharmaceutically acceptable salt thereof, the ropivacaine or the pharmaceutically acceptable salt thereof exists in a particle form, such as a crystal form, preferably a regular crystal form, such as a rod-like crystal form or a bulk crystal form, and the ropivacaine or the pharmaceutically acceptable salt thereof exists in a crystal form. The median diameter D50 is 1 [mu] m to 40 [mu] m, preferably 3 [mu] m to 40 [mu] m, and more preferably 5 [mu] m to 40 [mu] m; the invention further relates to application of the ropivacaine or the pharmaceutically acceptable salt of the ropivacaine prepared by the method in preparing a suspension of the ropivacaine or the pharmaceutically acceptable salt of the ropivacaine or a sterile solid composition preparation of the ropivacaine or the pharmaceutically acceptable salt of the ropivacaine, wherein the sterile solid composition preparation can be redissolved to obtain the suspension of the ropivacaine or the pharmaceutically acceptable salt of the ropivacaine. The suspension prepared by the method is simple in method, free of shearing and homogenizing treatment, easy to administrate and small in irritation, and has good medication safety and tolerance.

This semiconductor substrate is provided with: a main substrate; a seed crystal pattern located above the main substrate and including a first region; and a first semiconductor part extending from the first region, the main substrate is configured from a bulk crystal that is not a nitride semiconductor, and a part of the surface of the main substrate is a non-seed region that does not overlap the seed pattern in plan view.

Disclosed are a 4-iodopyrazole coordination compound and a preparation method and use thereof. The preparation method includes the following steps: placing CuCl2·2H2O and 4-iodopyrazole in a container at a certain molar ratio; adding absolute ethanol and dichloromethane to the container at a certain volume ratio to completely dissolve the CuCl2·2H2O and the 4-iodopyrazole; sealing and puncturing the container, and leaving the container to stand at room temperature for 2-4 days to obtain green bulk crystals; and washing, filtering and drying the green bulk crystals to obtain the 4-iodopyrazole coordination compound. The copper chloride-linked 4-iodopyrazole coordination compound prepared in the present application is a dual-function inhibitor, has a high inhibition rate, low dosage, good stability, difficulty in leaching with water, low toxicity, and low environmental impact, and thus can be used in fertilizers.

The application discloses a design and prediction method and system of a two-dimensional multiferroic hydroxide material, and the method is as follows: a standard three-dimensional hydroxide XOOH bulk crystal structure file is acquired, the file is cut by using visual software and a vacuum layer is added in the c direction, and the structure file type is converted into a.vasp file format by means of VESTA software; structure optimization calculation is carried out on the constructed hydroxide monolayer system, and the ferroelectric spontaneous polarization and the ferroelastic spontaneous strain direction are determined; the hydroxyl in the system is rotated and in-plane stress is applied, other ferroelectric phases and ferroelastic phases of the system are found, intermediate phases are found by respectively inserting points between the two ferroelectric phases and the two ferroelastic phases, and the reversal energy barrier between the two ferroelectric phases and the two ferroelastic phases is respectively calculated; the change of the ferroelectric polarization of the system along the ferroelastic transition path is calculated, and the internal mechanism of the coupling of the two ferroelectricities is explained. The method and system platform reduce the experimental trial and error cost, and realize screening / prediction of a two-dimensional ferroelectric and ferroelastic coupled multiferroic material.

The invention relates to a substrate-free Bi-doped rare earth iron garnet single crystal growth technology, which comprises the following steps: preparing raw materials, preparing a melt, cooling the melt to a crystal growth temperature, slowly descending a seed crystal rod provided with a seed crystal to contact with the melt after the melt temperature is stable, and rotating the seed crystal at a certain speed; in the growth process, crystal growth is carried out according to a set variable-speed cooling curve, and blocky crystals are obtained after growth for a period of time; and pulling out the bulk crystal from the melt, and slowly cooling to room temperature to obtain the Bi-doped rare earth iron garnet single crystal. The large-size blocky single crystal is prepared, the dependence of growth of an existing Faraday optical rotation sheet on a substrate is eliminated, and the production cost is reduced. According to the invention, the Faraday optical rotation sheet which is thinner than an existing product under the same wavelength can be obtained, and the size of the Faraday optical rotation sheet is further reduced. And meanwhile, simultaneous growth of multiple surfaces is realized, and crystals with larger sizes are obtained.

The invention discloses a preparation method of a DL-methionine bulk crystal. The preparation method comprises the following steps: under a stirring condition, heating a mixed solution of a DL-methionine raw material and a binary growth regulator to 40-60 DEG C, keeping the temperature for 30-120 minutes, then cooling to 10-30 DEG C, and keeping the temperature for 10-60 minutes to obtain the DL-methionine bulk crystals. The specific binary growth regulator is adopted and matched with the slow cooling crystallization process, the obtained methionine crystals are blocky crystals, the thickness can reach 260 microns, the bulk density can reach 0.77 g / mL, subsequent further production and application are facilitated, in addition, the technological process is simple, raw materials are easy to obtain, and industrial large-scale production and application are facilitated.

The invention discloses purple phosphorus microcrystalline powder, a preparation method thereof and a semiconductor device. The method comprises the following steps: placing amorphous red phosphorus and iodine in a quartz tube; carrying out vacuumizing treatment and flame sealing on the quartz tube; and placing the flame-sealed quartz tube in a tubular furnace for heat treatment to obtain the purple phosphorus microcrystal powder. Therefore, direct synthesis of the purple phosphorus microcrystal powder is realized, a high-energy crushing process of block crystals is not needed, the energy consumption and the production cost of the purple phosphorus powder in industrial application are remarkably reduced, and the method has a good actual popularization value; the process is simple and convenient, raw materials are easy to obtain, introduction of toxic metal impurities is reduced, the prepared purple phosphorus microcrystal powder is high in purity and excellent in crystallization quality and can be directly used for practical application such as catalysis and flame retardance, and a technical foundation is laid for large-scale popularization of high-purity purple phosphorus in the fields of electronics, photoelectrons and the like.

The invention relates to a hybrid metal halide crystal material with thermally induced jumping property, which is characterized in that the hybrid metal halide crystal material is a crystal which is synthesized by taking an organic amine ligand and a metal halide as raw materials and has dynamic response under thermal stimulation. The preparation method comprises the following steps: dissolving a metal halide and an organic amine ligand in a hydrogen halide solution, and carrying out ultrasonic or magnetic stirring to obtain a milk white turbid liquid; respectively adding absolute methanol and deionized water into the turbid liquid, and magnetically stirring under a heating condition until the absolute methanol and the deionized water are completely dissolved to obtain a clear solution; and after cooling to room temperature, slowing down liquid volatilization in a container filled with the clear solution in a breathable sealing manner, and standing for volatilization to obtain bulk crystals. The crystal size can be adjusted by adjusting the proportion of the ternary mixed solvent, the jump starting temperature can be increased by about 50K through a halogen substitution strategy, the method is simple in process and mild in condition, regulation and control of thermal response behaviors are achieved through crystal structure design, and the method has application value in the fields of thermally driven micro-actuators, thermal switch devices and solid state sensors.

The invention discloses a bulk crystal alkali vibration dispersing device, and relates to the technical field of vibration dispersing devices, the bulk crystal alkali vibration dispersing device comprises a conveying rack, a conveying belt, a vibration dispersing rack, a vibration dispersing machine shell arranged in the vibration dispersing rack, a vibration dispersing roller rotating in the vibration dispersing machine shell, and a vibration motor mounted on the vibration dispersing machine shell; a plurality of rollers in the rolling rack can effectively flatten an agglomerated area on the surface of the bagged crystal alkali, so that the whole surface is smoother, the height of the rolling rack is automatically adjusted according to the size of the bagged crystal alkali, the liquid pumping barrel is driven to move upwards, oil in the lifting rod is pumped through negative pressure generated by a closed oil way system, a sealing plug slightly moves upwards, and part of meshes are exposed; according to the design, self-adaptive adjustment of the vibration frequency along with the change of the size of bagged crystal alkali is achieved, and compared with the prior art, the bagged crystal alkali vibration scattering device has the advantage that the vibration scattering efficiency and uniformity of materials of different specifications are improved.

This invention belongs to the field of water treatment and environmental remediation technology, and discloses a method for removing uranium-rich defect-laden fluorine-doped cobalt tetroxide, its preparation, and its application. Fluorine is in-situ doped in bulk through a hydrothermal reaction. After calcination, crystalline bulk fluorine-doped cobalt tetroxide is obtained. Then, low-temperature argon plasma bombardment is applied to create abundant oxygen vacancy defects on the material surface without damaging the bulk crystal structure. The combined process of this invention simultaneously achieves a significant improvement in the material's conductivity and precise enrichment of highly active surface sites. It exhibits excellent conductivity and catalytic activity, achieving a maximum uranium removal efficiency of 99.2% in water. Its performance is stable within the pH range of 3-9, and the removal efficiency remains at 97.4% after 10 cycles. The preparation process of this invention is simple, controllable, and low-cost. The prepared material is suitable for the efficient purification of radioactive water bodies such as uranium-containing wastewater and uranium-containing groundwater from the nuclear industry, and has broad prospects for industrial application.

The invention relates to the technical field of single crystal optical fiber preparation, in particular to a preparation method and system of a continuous gradient doped single crystal optical fiber, and the preparation method comprises the steps: determining an expression that the absorption coefficient changes along with the doping concentration in a rare earth doped laser crystal; designing the distribution form of the absorption coefficient of the single crystal optical fiber by using an ideal absorption coefficient distribution formula and a Lambert-Beer law; setting a segmented concentration design scheme based on the expression and the distribution form, namely realizing the effect of the design scheme by adopting a segmented concentration form, determining the number of concentration segments and the length of each concentration segment so as to generate a corresponding bulk crystal, and processing the bulk crystal into a required size; preparing the blocky crystals into bonding crystals, and cutting the bonding crystals into long-strip-shaped square rods with preset sizes; taking the long-strip-shaped square rod as a source rod, and growing to obtain the continuous gradient doped single crystal optical fiber. The single crystal optical fiber prepared by the invention can effectively inhibit the generation of a heat effect in a laser operation process.

A method for constructing a periodically-poled nonlinear crystal may include implanting ions in a bulk crystal of strontium tetraborate (SBO) or lithium triborate (LBO) to generate a damaged layer at a predetermined depth, attaching a handle material to the surface of the bulk crystal, cleaving the bulk crystal at the damaged layer to generate a thin plate, and polishing the thin plate to a thickness suitable for quasi-phase-matching (QPM) to generate laser output light having wavelengths in the range of about 120-200 nm. The surfaces of thin plates generated in this way are optically contacted, and resulting stacks are diced and arranged to generate many-layered QPM crystals. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.

The invention provides a device and method for growing nitride crystals by regulating and controlling temperature gradient, and belongs to the technical field of semiconductor synthesis, the device comprises a low-temperature reaction zone and a high-temperature crystallization zone, heaters are arranged on the outer sides of the low-temperature reaction zone and the high-temperature crystallization zone, a temperature field is constructed in the high-temperature crystallization zone, and the temperature gradient of the temperature field is adjusted and controlled. The low-temperature reaction area is provided with a first gas inlet pipe, a second gas inlet pipe and a reaction boat, the tail end of the first gas inlet pipe is communicated with the reaction boat, the tail end of the second gas inlet pipe is communicated with the high-temperature crystallization area, the high-temperature crystallization area is provided with a seed crystal fixing support, and the seed crystal fixing support is fixedly arranged on a seed crystal fixing rod. The temperature field with the temperature gradient is constructed by adjusting the structure of the cavity in the high-temperature crystallization area or adjusting the arrangement mode of the heaters on the outer side of the high-temperature crystallization area, repeatability is good, the growth efficiency of the nitride bulk crystals is improved by controlling the axial temperature gradient and the radial temperature gradient, and the growth quality is guaranteed.

The invention discloses a structure capable of reducing the proportion of bulk crystals of an electrolytic copper foil and a using method.The structure comprises shielding plates which are detachably installed at the positions, corresponding to liquid return openings, of the upper sides of titanium plates at the two ends in an electrolytic bath so as to improve the liquid level of the positions, corresponding to the liquid return openings, of the titanium plates, and the length of the shielding plates is matched with the width of the titanium plates; the liquid level of the electrolyte liquid return opening can be raised through the arrangement of the shielding plate, so that the surface of the titanium roller is wetted by the electrolyte in advance; under the action of a weak electric field, copper can be deposited on the roller more uniformly and more tightly, the microstructure of the copper foil is optimized fundamentally, the proportion that the copper foil becomes blocky crystals is reduced during subsequent pressing of the CCL substrate, the conversion degree of the blocky crystals of the copper foil on the two faces of the substrate is more consistent, internal stress is released uniformly, the situation that one face is tight and the other face is loose is avoided, and the quality of the CCL substrate is improved. The warping risk of the CCL substrate is directly reduced, and the requirements of circuit board production can be met.

Disclosed are a 4-iodopyrazole coordination compound and a preparation method and use thereof. The preparation method includes the following steps: placing CuCl2·2H2O and 4-iodopyrazole in a container at a certain molar ratio; adding absolute ethanol and dichloromethane to the container at a certain volume ratio to completely dissolve the CuCl2·2H2O and the 4-iodopyrazole; sealing and puncturing the container, and leaving the container to stand at room temperature for 2-4 days to obtain green bulk crystals; and washing, filtering and drying the green bulk crystals to obtain the 4-iodopyrazole coordination compound. The copper chloride-linked 4-iodopyrazole coordination compound prepared in the present application is a dual-function inhibitor, has a high inhibition rate, low dosage, good stability, difficulty in leaching with water, low toxicity, and low environmental impact, and thus can be used in fertilizers.

A method for constructing a periodically-poled nonlinear crystal may include implanting ions in a bulk crystal of strontium tetraborate (SBO) or lithium triborate (LBO) to generate a damaged layer at a predetermined depth, attaching a handle material to the surface of the bulk crystal, cleaving the bulk crystal at the damaged layer to generate a thin plate, and polishing the thin plate to a thickness suitable for quasi-phase-matching (QPM) to generate laser output light having wavelengths in the range of about 120-200 nm. The surfaces of thin plates generated in this way are optically contacted, and resulting stacks are diced and arranged to generate many-layered QPM crystals. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.

The present disclosure provides a pyrazole cobalt-based metal-organic framework material, a chemical formula of the pyrazole cobalt-based metal-organic framework material is CoC12H8N4, and the pyrazole cobalt-based metal-organic framework material is named Co-DPB; a ligand of the Co-DPB is 1,3-Di (1-H-pyrazolyl) benzene H2DPB, and a structural formula isand the Co-DPB is prepared by a solvothermal reaction of an organic ligand H2DPB and a cobalt source; and the Co-DPB is a purple bulk crystal material.