13 results about "Bulk crystal" patented technology

The present application relates to a kind of Bi-doped rare earth iron garnet body single crystal growth techniques without substrate, comprising the following steps: raw material preparation, melt preparation, melt is cooled to crystal growth temperature, after melt temperature stabilizes, slowly lower the seed crystal rod installed with seed crystal, with melt, seed crystal rotates at a certain speed;During growth, crystal growth is carried out according to the set variable speed cooling curve, and block crystal is obtained after growing for a period of time;Block crystal is pulled out from melt, and slowly cooled to room temperature, and Bi-doped rare earth iron garnet body single crystal is obtained.The present application obtains large-size block single crystal, gets rid of the dependence of existing Faraday optical rotator growth on substrate, and reduces production cost.The present application can obtain Faraday optical rotator which is thinner than existing product thickness at the same wavelength, further reducing the volume.Moreover, multiple surfaces are simultaneously grown, and larger size crystal is obtained.

The preparation method comprises the following steps: putting flaky tantalum foil and phosphorus powder into a quartz tube as raw materials, adding iodine powder as a transport agent, and sealing the quartz tube; placing the quartz tube in a beaker filled with dry ice and an acetone solution, and vacuumizing the quartz tube; and putting the sealed quartz tube into a tubular furnace, heating to a reaction temperature of 800-900 DEG C, and preserving heat for 0.8-1.2 hours to obtain the TaP thin layer after the reaction is completed. According to the method, a chemical vapor transport method is adopted, the tantalum foil and the phosphorus powder which are regular in shape grow in a high-vacuum-degree closed environment and serve as raw materials, a small amount of iodine elementary substance is added to serve as a transport agent, the TaP thin layer which is high in quality and good in catalytic performance grows, and compared with pure blocky crystals (211.4 mV), the TaP thin layer has more excellent hydrogen evolution catalytic performance.

The application discloses a kind of base frequency gain and nonlinear frequency conversion integrated monocrystal optical fiber and its preparation method and application, belong to laser technical field.The monocrystal optical fiber covers base frequency gain monocrystal optical fiber and one or more nonlinear monocrystal optical fiber, and is made by the way of first bulk crystal bonding and then integrated drawing, and can be applied to micro visible light, ultraviolet or mid-infrared laser.The application can significantly reduce the influence of spatial walk-off effect in bulk crystal nonlinear process, improve energy conversion efficiency, show the advantages of miniaturization, high efficiency and stable performance, completely break the limitation of traditional laser in conversion efficiency and volume, with good practicability, higher universality and excellent market application prospect.

The invention discloses a rolling shear force-based iron-gallium-tellurium two-dimensional material thin layer preparation method and application thereof, and the method comprises the steps: fixing an iron-gallium-tellurium block crystal to a viscous surface of a viscous adhesive tape, and obtaining the fixed iron-gallium-tellurium block crystal; based on a competitive adhesion principle, repeatedly folding and stripping the fixed iron-gallium-tellurium block crystal to obtain an adhesive tape adhered with an iron-gallium-tellurium two-dimensional material thin layer; pDMS is attached to the surface of a cylindrical rod, rolling is conducted on the adhesive tape attached with the iron-gallium-tellurium two-dimensional material thin layer through rolling shear force, and the iron-gallium-tellurium two-dimensional material thin layer is prepared. According to the method, instantaneous impact force of traditional vertical stripping can be replaced by rolling shearing force, and the thickness and integrity of the iron gallium tellurium two-dimensional material thin layer are improved. The preparation method and application of the iron gallium tellurium two-dimensional material thin layer based on the rolling shear force can be widely applied to the technical field of two-dimensional material preparation.

The invention relates to an infrared polarized photoelectric detector and a preparation method thereof, and belongs to the technical field of photoelectric detection, and the preparation method comprises the following steps: 1, cleaning a substrate; 2, preparing a patterned metal electrode; step 3, preparation and transfer preparation of a two-dimensional material; respectively stripping from the blocky niobium diselenide crystal and the blocky black phosphorus crystal by adopting a mechanical stripping method to obtain a niobium diselenide sheet and a black phosphorus sheet, and respectively transferring the obtained sheets to the surface of a polydimethylsiloxane elastomer; step 4, Van der Waals assembling of the two-dimensional metal electrode; the two niobium diselenide sheets are sequentially transferred to the substrate with the patterned metal electrodes through a micromanipulation system, the two niobium diselenide sheets are aligned with the two patterned metal electrodes respectively and make close contact with the patterned metal electrodes, and a set distance is kept between the two niobium diselenide sheets; step 5; forming a heterojunction structure; the beneficial effects of the invention are that through the NbSe2-BP-NbSe2 structure, the intrinsic anisotropy of black phosphorus is utilized to respond to polarization information, and the infrared polarization detection precision is improved.

The invention discloses a bulk crystal alkali vibration dispersing device, and relates to the technical field of vibration dispersing devices, the bulk crystal alkali vibration dispersing device comprises a conveying rack, a conveying belt, a vibration dispersing rack, a vibration dispersing machine shell arranged in the vibration dispersing rack, a vibration dispersing roller rotating in the vibration dispersing machine shell, and a vibration motor mounted on the vibration dispersing machine shell; a plurality of rollers in the rolling rack can effectively flatten an agglomerated area on the surface of the bagged crystal alkali, so that the whole surface is smoother, the height of the rolling rack is automatically adjusted according to the size of the bagged crystal alkali, the liquid pumping barrel is driven to move upwards, oil in the lifting rod is pumped through negative pressure generated by a closed oil way system, a sealing plug slightly moves upwards, and part of meshes are exposed; according to the design, self-adaptive adjustment of the vibration frequency along with the change of the size of bagged crystal alkali is achieved, and compared with the prior art, the bagged crystal alkali vibration scattering device has the advantage that the vibration scattering efficiency and uniformity of materials of different specifications are improved.

This invention belongs to the field of water treatment and environmental remediation technology, and discloses a method for removing uranium-rich defect-laden fluorine-doped cobalt tetroxide, its preparation, and its application. Fluorine is in-situ doped in bulk through a hydrothermal reaction. After calcination, crystalline bulk fluorine-doped cobalt tetroxide is obtained. Then, low-temperature argon plasma bombardment is applied to create abundant oxygen vacancy defects on the material surface without damaging the bulk crystal structure. The combined process of this invention simultaneously achieves a significant improvement in the material's conductivity and precise enrichment of highly active surface sites. It exhibits excellent conductivity and catalytic activity, achieving a maximum uranium removal efficiency of 99.2% in water. Its performance is stable within the pH range of 3-9, and the removal efficiency remains at 97.4% after 10 cycles. The preparation process of this invention is simple, controllable, and low-cost. The prepared material is suitable for the efficient purification of radioactive water bodies such as uranium-containing wastewater and uranium-containing groundwater from the nuclear industry, and has broad prospects for industrial application.

The invention relates to the technical field of single crystal optical fiber preparation, in particular to a preparation method and system of a continuous gradient doped single crystal optical fiber, and the preparation method comprises the steps: determining an expression that the absorption coefficient changes along with the doping concentration in a rare earth doped laser crystal; designing the distribution form of the absorption coefficient of the single crystal optical fiber by using an ideal absorption coefficient distribution formula and a Lambert-Beer law; setting a segmented concentration design scheme based on the expression and the distribution form, namely realizing the effect of the design scheme by adopting a segmented concentration form, determining the number of concentration segments and the length of each concentration segment so as to generate a corresponding bulk crystal, and processing the bulk crystal into a required size; preparing the blocky crystals into bonding crystals, and cutting the bonding crystals into long-strip-shaped square rods with preset sizes; taking the long-strip-shaped square rod as a source rod, and growing to obtain the continuous gradient doped single crystal optical fiber. The single crystal optical fiber prepared by the invention can effectively inhibit the generation of a heat effect in a laser operation process.

A method for constructing a periodically-poled nonlinear crystal may include implanting ions in a bulk crystal of strontium tetraborate (SBO) or lithium triborate (LBO) to generate a damaged layer at a predetermined depth, attaching a handle material to the surface of the bulk crystal, cleaving the bulk crystal at the damaged layer to generate a thin plate, and polishing the thin plate to a thickness suitable for quasi-phase-matching (QPM) to generate laser output light having wavelengths in the range of about 120-200 nm. The surfaces of thin plates generated in this way are optically contacted, and resulting stacks are diced and arranged to generate many-layered QPM crystals. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.

The invention provides a device and method for growing nitride crystals by regulating and controlling temperature gradient, and belongs to the technical field of semiconductor synthesis, the device comprises a low-temperature reaction zone and a high-temperature crystallization zone, heaters are arranged on the outer sides of the low-temperature reaction zone and the high-temperature crystallization zone, a temperature field is constructed in the high-temperature crystallization zone, and the temperature gradient of the temperature field is adjusted and controlled. The low-temperature reaction area is provided with a first gas inlet pipe, a second gas inlet pipe and a reaction boat, the tail end of the first gas inlet pipe is communicated with the reaction boat, the tail end of the second gas inlet pipe is communicated with the high-temperature crystallization area, the high-temperature crystallization area is provided with a seed crystal fixing support, and the seed crystal fixing support is fixedly arranged on a seed crystal fixing rod. The temperature field with the temperature gradient is constructed by adjusting the structure of the cavity in the high-temperature crystallization area or adjusting the arrangement mode of the heaters on the outer side of the high-temperature crystallization area, repeatability is good, the growth efficiency of the nitride bulk crystals is improved by controlling the axial temperature gradient and the radial temperature gradient, and the growth quality is guaranteed.

The invention discloses a structure capable of reducing the proportion of bulk crystals of an electrolytic copper foil and a using method.The structure comprises shielding plates which are detachably installed at the positions, corresponding to liquid return openings, of the upper sides of titanium plates at the two ends in an electrolytic bath so as to improve the liquid level of the positions, corresponding to the liquid return openings, of the titanium plates, and the length of the shielding plates is matched with the width of the titanium plates; the liquid level of the electrolyte liquid return opening can be raised through the arrangement of the shielding plate, so that the surface of the titanium roller is wetted by the electrolyte in advance; under the action of a weak electric field, copper can be deposited on the roller more uniformly and more tightly, the microstructure of the copper foil is optimized fundamentally, the proportion that the copper foil becomes blocky crystals is reduced during subsequent pressing of the CCL substrate, the conversion degree of the blocky crystals of the copper foil on the two faces of the substrate is more consistent, internal stress is released uniformly, the situation that one face is tight and the other face is loose is avoided, and the quality of the CCL substrate is improved. The warping risk of the CCL substrate is directly reduced, and the requirements of circuit board production can be met.

A method for constructing a periodically-poled nonlinear crystal may include implanting ions in a bulk crystal of strontium tetraborate (SBO) or lithium triborate (LBO) to generate a damaged layer at a predetermined depth, attaching a handle material to the surface of the bulk crystal, cleaving the bulk crystal at the damaged layer to generate a thin plate, and polishing the thin plate to a thickness suitable for quasi-phase-matching (QPM) to generate laser output light having wavelengths in the range of about 120-200 nm. The surfaces of thin plates generated in this way are optically contacted, and resulting stacks are diced and arranged to generate many-layered QPM crystals. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.

The present disclosure provides a pyrazole cobalt-based metal-organic framework material, a chemical formula of the pyrazole cobalt-based metal-organic framework material is CoC12H8N4, and the pyrazole cobalt-based metal-organic framework material is named Co-DPB; a ligand of the Co-DPB is 1,3-Di (1-H-pyrazolyl) benzene H2DPB, and a structural formula isand the Co-DPB is prepared by a solvothermal reaction of an organic ligand H2DPB and a cobalt source; and the Co-DPB is a purple bulk crystal material.