2191 results about "Aluminium nitride" patented technology

The invention discloses a high-strength and high-toughness aluminum nitride ceramic and a preparation method thereof, and relates to the technical field of ceramics, a sol-gel method is adopted to coat the surface of aluminum nitride with a stable shell layer to form a core-shell structure, meanwhile, the low lattice mismatch rate of a core-shell interface is utilized to reduce thermal resistance, and toughness and thermal conductivity are both considered; according to the external magnetic field tape casting method, the magnetic dipole moment orientation principle is utilized, an external magnetic field is applied in the tape casting stage, the in-plane mechanical property is improved, and the fracture toughness is improved through the magnetism of aluminum nitride whiskers; a reinforcement is introduced to improve the mechanical property and corrosion resistance of the aluminum nitride ceramic material, multi-granularity powder is compounded, large-particle aluminum nitride powder is used as a sintering and heat-conducting framework material, and high activity provided by submicron particles is utilized to promote sintering, so that the sintering temperature of aluminum nitride can be remarkably reduced, and the performance is greatly improved; and the aluminum nitride substrate expands more application fields on a future packaging circuit.

The invention discloses pressureless sintered aluminum nitride ceramic as well as a preparation method and application thereof. The preparation method comprises the following steps: ball-milling and mixing micron-sized aluminum nitride, a sintering aid, nano-sized molybdenum powder, a dispersing agent, a binder and an organic solvent to prepare slurry; and drying the slurry, granulating, forming, dumping and sintering to obtain the pressureless sintered aluminum nitride ceramic. Wherein the sintering aid is a combination of samarium fluoride and yttrium fluoride. According to the preparation method, oxygen is removed at a low temperature by virtue of strong affinity of the nanoscale molybdenum powder and oxygen, the nanoscale molybdenum powder and the sintering aid jointly play a role in liquid-phase sintering assistance at a high temperature, densified sintering is realized and grain growth is inhibited by adopting pressureless sintering at a relatively low sintering temperature, the aluminum nitride ceramic with both heat conduction and strength is obtained, and meanwhile, a low-resistance second phase is generated; the resistivity of the aluminum nitride ceramic is adjusted while the heat conduction characteristic of the aluminum nitride ceramic is improved, the electrical conductivity of the aluminum nitride material is improved, and finally the aluminum nitride ceramic with high heat conduction and bending strength and moderate resistivity is obtained to meet the use requirements of electrostatic chucks.

The invention belongs to the technical field of whisker material growth and ceramic substrate preparation, and discloses a preparation method of an aluminum nitride whisker and a high-strength and high-thermal-conductivity ceramic substrate, and the preparation method of the aluminum nitride whisker comprises the following steps: mixing aluminum powder serving as a raw material and ammonium salt serving as an inducer according to a mass ratio of (2: 1)-(1: 2); and carrying out heat preservation for 0.5-2 hours at the temperature of 800-1100 DEG C under the nitrogen and / or ammonia atmosphere condition, and carrying out nitridation reaction. According to the invention, a whisker and ceramic substrate synthesis method is improved, aluminum nitride whiskers with uniform morphology and length-diameter ratio are controllably synthesized through a rapid nitriding method, and the aluminum nitride whiskers and spherical aluminum nitride are sintered only by taking the aluminum nitride whiskers as an additive without the participation of additional sintering aids and reinforcers, so that the ceramic substrate is obtained. The high-strength and high-thermal-conductivity aluminum nitride ceramic substrate is obtained and has high mechanical strength and thermal conductivity.

The present application belongs to the field of polymer material technology, and in particular, relates to a polyimide composite material, a preparation method thereof, and an application thereof. The preparation method of the polyimide composite material comprises the steps of: preparing a polyamic acid slurry from a diamine monomer, a dianhydride monomer, and an organic solvent; preparing a mixed slurry from the polyamic acid slurry and a nanomaterial, and then performing a spinning imidization treatment to obtain a polyimide composite material; wherein the nanomaterial comprises at least one of nano silicon carbide, aluminum nitride, carbon nanotubes, graphene, and nano silicon dioxide. By blending polyimide with other nanomaterials having high thermal conductivity to improve its thermal conductivity, the thermal conductivity of the polyimide composite material is optimized and improved, and its heat dissipation capacity in a high temperature working environment is enhanced, while having high tensile strength and thermal conductivity. The service life of the polyimide composite material is extended, and its application range can be further expanded, such as in the back panel assembly of a smartphone.

The invention provides modified aluminum nitride and a preparation method thereof, and the preparation method comprises the following steps: grinding a mixed material comprising aluminum nitride powder, a dispersing agent and an alcohol solvent to obtain nanoscale aluminum nitride powder with the particle size of 50-400 nm; the nanoscale aluminum nitride powder is subjected to first freeze drying treatment, and freeze-dried aluminum nitride powder is obtained; and mixing a solution containing dopamine with the freeze-dried aluminum nitride powder, and then carrying out second freeze-drying treatment to obtain the modified aluminum nitride. The method is helpful for improving the hydrolysis resistance of aluminum nitride.

The invention relates to the field of ceramic materials, in particular to a high-temperature-resistant composite ceramic material and a preparation method thereof.The high-temperature-resistant composite ceramic material is prepared from, by weight, 80-100 parts of zirconium oxide, 10-20 parts of silicon carbide, 5-10 parts of aluminum nitride, 1-5 parts of a sintering aid and 5-10 parts of modified silicon powder; the modified silicon powder takes nano silicon powder as a core body, the core body is sequentially coated with a transition metal organic polymer and oxidized asphalt, and the prepared composite ceramic material is good in mechanical strength and excellent in high temperature resistance and has important application value in the field of aerospace.

The invention belongs to the technical field of grinding and polishing, and particularly relates to an aluminum nitride ceramic polishing process. The polishing process comprises the following steps that the aluminum nitride ceramic substrate is placed on a polishing pad, and polishing liquid is added for polishing; the polishing solution is prepared from the following components in parts by weight: 15-20 parts of a composite abrasive, 2-4 parts of an oxidant, 8-10 parts of a functional compound and 60-70 parts of water are mixed into a solution, and the pH value of the solution is adjusted to be 4-4.5 by using organic acid; the polishing solution provided by the invention has good suspension stability and antibacterial performance, the polishing solution is used for polishing the aluminum nitride ceramic substrate, the polishing rate is high, the polishing effect is good, and the aluminum nitride ceramic substrate which is small in surface roughness and free of scratches can be obtained.

The embodiment of the invention discloses a laser assembly, a preparation method and a control method, the laser assembly comprises a base, an aluminum nitride gold tin heat sink, a laser chip and a heating resistor, based on this, in the working process, the laser assembly can realize the laser function by electrifying a laser, and the laser chip can be electrically connected with the heating resistor. When the laser assembly is applied to the extremely cold condition, if the laser chip cannot adapt to the extremely cold temperature, the heating resistor is powered on deliberately, the heating resistor can generate heat energy under the influence of current, and then the heat energy is transmitted through the aluminum nitride gold tin heat sink to heat the laser chip, so that the laser chip can work normally; therefore, even if the laser chip is weak in low-temperature resistance, the laser chip can work under a low-temperature condition after being heated by the heating resistor, so that the working stability of the laser assembly is guaranteed, and the cost of the laser assembly is reduced.

The invention relates to the technical field of aluminum nitride powder preparation, and particularly discloses an aluminum nitride powder preparation device and a preparation process thereof.The aluminum nitride powder preparation device comprises a bottom plate, two mounting frames are fixedly mounted on the top face of the bottom plate, and a rotating frame is rotatably mounted between the two mounting frames through a rotating shaft; mounting shafts are rotationally mounted on the two opposite inner walls in the rotating frame, and the ends, close to each other, of the two mounting shafts are jointly and fixedly connected with a rotating ring which is obliquely arranged. The grinding barrel is driven by the switching assembly to adjust inclination around the axis center of the grinding barrel, so that raw material powder can be sequentially subjected to step-by-step ball milling in the two grinding cavities, the particle size of the raw material powder is rapidly reduced under the action of a large grinding medium, the total ball milling time is shortened, and the cold welding phenomenon is reduced; and the raw material powder is subjected to high-precision ball milling through a small grinding medium, so that the raw material powder is further refined, the influence of cold welding on the ball milling quality is reduced, and the agglomeration phenomenon is reduced.

The invention relates to the technical field of insulators, and provides a high-strength insulator and a preparation method thereof.The high-strength insulator is prepared from, by weight, 20-30 parts of aluminum oxide, 10-15 parts of kaolin, 6-10 parts of aluminum nitride, 15-20 parts of mullite, 5-10 parts of mica powder, 3-6 parts of titanium dioxide and 10-15 parts of modified silicon nitride whiskers; the modified silicon nitride whiskers are obtained by modifying silicon nitride whiskers with rare earth oxide. According to the technical scheme, the problem of low insulator strength in the prior art is solved.

The invention provides a preparation process of a circuit board with an embedded copper core aluminum nitride ceramic high-heat-dissipation module. The preparation process comprises the following steps: carrying out first milling and cutting treatment on a plurality of first core plates; pre-stacking the plurality of first core boards, the plurality of second core boards, the plurality of first PP resin layers, the plurality of second PP resin layers and the third PP resin layers to obtain a multi-layer core board group; after the embedded copper core aluminum nitride ceramic high-heat-dissipation module is embedded into the semi-buried groove, the multi-layer core plate set is subjected to pressing treatment; drilling the laminated multi-layer core board group to form a conductive through hole in the multi-layer core board group; carrying out metallization treatment on the multi-layer core board group after the drilling treatment; and performing line manufacturing processing on the multi-layer core board group after metallization processing to obtain the circuit board embedded with the copper core aluminum nitride ceramic high-heat-dissipation module.

The invention discloses a preparation method of aluminum nitride by spray granulation, which belongs to the technical field of ceramic preparation. The method comprises: adding aluminum nitride powder and a dispersant into a ball mill for ball milling for 24 to 26 hours, adding an adhesive and a solvent thereto, wherein the adhesive is acrylic resin or PVB, and continuing ball milling for 15 to 18 hours after the adhesive and the solvent are added, the ball milling speed of the ball mill is set to 100 to 200 rpm, the diameter of the ball milling beads is 20 to 50 mm, the number of the ball milling beads is 200 to 300, and aluminum nitride slurry is formed after ball milling; the aluminum nitride slurry is sucked into a granulation tower, and the parameters of the granulation tower are set to: an air inlet temperature of 130 to 140 DEG C, an air outlet temperature of 80 to 90 DEG C, a rotation speed of an atomizing disk of 7000 to 8000 rpm, and a feed pump rotation speed of 50 to 60 rpm; collecting samples at a discharge port of the granulation tower, and then testing the samples and recording the test results.

The invention relates to the technical field of porcelain, in particular to porous antioxidant composite porcelain and a preparation method thereof, and the preparation method comprises the following steps: weighing the following raw materials in parts by weight: 35-40 parts of clay, 10-15 parts of aluminum oxide, 6-10 parts of an aluminum nitride-doped modified homogenizing agent, 5-9 parts of kaolin and 5-8 parts of a sodium silicate blender. According to the porous anti-oxidation composite porcelain, clay is adopted as a matrix, aluminum oxide and kaolin are added to be matched with an aluminum nitride modified homogenizing agent and a sodium silicate blender, the raw materials are blended and synergized, compression molding is performed, and finally homogenizing sintering is performed, so that the porous anti-oxidation composite porcelain is obtained. The porous performance, the high-temperature oxidation resistance and the mechanical bending strength performance of the obtained composite porcelain are harmoniously improved, and meanwhile, the stability effect of the product is remarkable under different degrees of corrosion conditions.

The invention provides nickel-based superalloy powder and a preparation method and application thereof, nickel-based superalloy and a preparation method and application thereof, and relates to the technical field of alloys. The preparation method comprises the following steps: smelting a nickel-based high-temperature alloy raw material to obtain alloy liquid; and the alloy liquid is atomized and crushed, and the nickel-based high-temperature alloy powder is obtained. Compared with traditional nickel-based superalloy preparation, aluminum nitride and titanium nitride raw materials are added in the nickel-based superalloy powder preparation process, aluminum nitride and titanium nitride are separated out in the alloy powder preparation process to form a strengthening phase, and the tensile strength and the elongation at break of the nickel-based superalloy can be improved; and particularly, as a main raw material for additive manufacturing of high-performance metal components, the material has a very good application prospect.

The present invention relates to the technical field of aluminum nitride synthesis, and specifically discloses a method for preparing aluminum nitride powder, S1, aluminum powder and aluminum nitride powder are mixed to obtain a first mixture; aluminum chloride powder and ammonium salt are mixed to obtain a second mixture; S2, the first mixture is spread on a material frame padded with a first carbon felt, and the second mixture is sealed in a closed container surrounded by the second carbon felt, and the closed container is on the upper surface, lower surface or middle position of the first mixture; S3, vacuuming and injecting nitrogen, and applying electricity to induce the first mixture to undergo a self-propagating combustion synthesis reaction, and to cause the second mixture to undergo a gas phase synthesis reaction. This key technology combines combustion synthesis with gas phase synthesis to overcome the problems of difficult control of combustion synthesis of aluminum nitride, low purity of the obtained product, and coarse and uneven grain size, and can simultaneously prepare micron-level powder and nano-level powder by partitioning.

The invention relates to the field of cutter coatings, and provides a coated hard alloy cutter aiming at the problem that the mechanical property of the cutter is influenced by poor binding force between the coating and a substrate, the cutter substrate is tungsten carbide-based hard alloy, and the hard alloy contains VC, Ru and TaC; and the coating sequentially comprises a molybdenum sulfide layer, an aluminum nitride layer and an aluminum titanium silicon nitride layer from inside to outside. By limiting the components of the cutter base body and the sequence and components of the multi-element coating, the cutter with good binding force between the coating and the base body and long service life is obtained.

To suppress spurious responses and also suppress degradation of main responses.SOLUTION: An elastic wave device 100 includes: a supporting substrate 10; a piezoelectric layer 14 formed on the supporting substrate 10; a pair of comb-shaped electrodes 20 provided on the piezoelectric layer 14; a first insulation layer 11 formed between the supporting substrate 10 and the piezoelectric layer 14, the first insulation layer being made of one of polycrystal or amorphous oxide aluminum and polycrystal or amorphous polysilicon; and a second insulation layer 12 formed between the first insulating layer 11 and the piezoelectric layer 14, the second insulation layer being made of aluminum nitride, silicon nitride, silicon carbide, or diamond-like carbon and having a first surface 60 adjacent to the first insulation layer 11 and a second surface 61 adjacent to the piezoelectric layer 14, and the first surface being rougher than the second surface.SELECTED DRAWING: Figure 1

The invention discloses a silicon substrate gallium nitride wafer containing a large mismatch stress regulation and control structure and a preparation method and application thereof, and relates to the technical field of semiconductor materials. The silicon substrate gallium nitride wafer containing the large mismatch stress regulation and control structure is formed by stacking a silicon substrate, an aluminum nitride amorphous film barrier layer, an ultrathin porous aluminum oxide weak bonding decoupling layer, an aluminum nitride single crystal film nucleating layer template layer and a gallium nitride single crystal film quality improvement layer in sequence. According to the invention, by regulating and controlling the pore size and pore density in the ultrathin porous alumina weak bonding and decoupling layer, the weak bonding and decoupling effect of the aluminum nitride single crystal film nucleating layer template layer on the ultrathin porous alumina weak bonding and decoupling layer is regulated and controlled; and therefore, large mismatch stress regulation and control of the silicon substrate gallium nitride material are realized, and the crack-free thickness, the material crystallization quality and the material preparation efficiency are improved. The silicon substrate gallium nitride wafer containing the large mismatch stress regulation and control structure can be applied to development and production of gallium nitride-based power electronic devices, microwave radio frequency devices and optoelectronic devices.

The invention belongs to the field of microelectronics, and particularly relates to a preparation method and application of a ferroelectric diode based on a scandium-doped aluminum nitride thin film, and the ferroelectric diode is prepared through the following steps: S1, growing an adhesion layer on a substrate through magnetron sputtering; s2, growing a bottom electrode on the adhesion layer through magnetron sputtering; s3, growing a ferroelectric film on the bottom electrode through magnetron co-sputtering at room temperature; s4, coating photoresist on the ferroelectric film, and exposing and developing; s5, growing a top electrode on the exposed and developed ferroelectric film through magnetron sputtering; and S6, stripping to obtain the ferroelectric diode. Compared with the prior art, the method has the advantages that the problems of high preparation temperature of the Al1-xScxN layer and large thickness of the Al1-xScxN layer in the prior art are solved, the ferroelectric diode memory of the scandium-doped aluminum nitride film is prepared at room temperature for the first time, and compatibility with a CMOS (complementary metal oxide semiconductor) process is better realized.

The invention discloses a cavity surface treatment method of a semiconductor laser and the semiconductor laser, and the method comprises the steps: stacking and placing laser chips subjected to atmospheric cleavage and pretreatment into a sample injection cavity for first heat treatment, and then sequentially carrying out second heat treatment, injecting reducing gas for impact and carrying out third heat treatment in a growth cavity, injecting fluorine-containing ion source gas to perform surface fluorination treatment on the surface of the GaAs substrate so as to generate a wide-band-gap metal fluorination layer with a first thickness on the surface of the GaAs substrate, injecting hydrogen-containing nitrogen ion source gas and an evaporation metal aluminum source, and generating a hydrogenated aluminum nitride layer with a second thickness on the metal fluorination layer, and a passivation layer composed of the metal fluorination layer and the hydrogenated aluminum nitride layer is obtained. According to the invention, the surface state density of the cavity surface of the GaAs-based semiconductor laser can be reduced, and the optical catastrophe damage resistance is enhanced, so that the performance and reliability of the semiconductor laser are improved.

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

The invention discloses a manufacturing method of a high molecular weight modified silicified polyester electrostatic chuck. The manufacturing method comprises the following steps: obtaining a hyperbranched polyurethane (HBPU) solution with the hyperbranched degree of 0.6; a hydroxyl-terminated hyperbranched organic silica gel solution is obtained; preparing a high molecular weight modified silicified polyurethane rubber bottom layer solution; a proper amount of silane coupling agent (KH550) is subjected to surface modification treatment with aluminum oxide nano micro powder, aluminum nitride nano micro powder, white carbon black nano micro powder and diamond-like carbon nano micro powder through a liquid phase modification method, and then a modified material is obtained through a spray drying method; preparing a high molecular weight modified silicified polyester bottom layer solution; preparing a high molecular weight modified silicified polyester dielectric layer and an electrode layer; preparing a heat-conducting insulating layer; and patterning the dielectric substrate B electrode layer. The electrostatic chuck prepared by the invention has the functions of high temperature difference resistance, cleanness and flexible clamping, and has higher mechanical strength, thermal stability and temperature range adaptation range.

The invention discloses a preparation method of flaky aluminum nitride ceramic powder and a product thereof. The preparation method comprises the following steps: by taking deionized water as a dispersion medium, uniformly mixing Al2O3 powder, carbon black and Na3AlF6 through ball milling, and drying to obtain a precursor; and in a flowing nitrogen atmosphere, the precursor is subjected to a carbon thermal reduction reaction and a nitridation reaction to obtain the micron-sized flaky aluminum nitride ceramic powder. According to the method, a flaky template does not need to be prepared in advance, flaky AlN can be directly generated, and the technical defect that an existing process depends on precursor morphology is overcome.

In accordance with some embodiments of the present disclosure, a memory device is provided. The memory device may include a first electrode, a ferroelectric layer fabricated on the first electrode, and a second electrode fabricated on the ferroelectric layer. The ferroelectric layer includes a plurality of ferroelectric films and a plurality of interface layers stacked alternately. Each of the ferroelectric films comprises at least one ferroelectric material, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), zirconium-doped hafnium oxide (Hf1-xZrxO2), scandium-doped aluminum nitride (Al1-xScxN), titanates (BaTiO3), niobates (LiNbO3), tantalates (NaTaO3), etc. Each of the interface layers comprises at least one dielectric material that is more chemically stable than the ferroelectric material, such as aluminum oxide.

The invention provides a welding method of an aluminum nitride ceramic heating plate, which comprises the following steps of: firstly, accurately grinding and cleaning a welding surface of an aluminum nitride sleeve and a welding surface of an aluminum nitride plate body, and then printing and coating a welding layer material Y2O3-CaCO3-SiO2-MgO on the welding surface of the aluminum nitride sleeve and the welding surface of the aluminum nitride plate body; and finally sintering to obtain the aluminum nitride ceramic heating plate with good sealing performance, high welding strength and high heat conductivity, and the aluminum nitride ceramic heating plate is suitable for large-scale popularization and application.

To provide a technique for improving the thermal conductivity of a composite member.SOLUTION: A composite member comprises aluminum nitride and silicon carbide, wherein when a distribution diagram of silicon, a distribution diagram of carbon, and a distribution diagram of aluminum in a cross-sectional view of the composite member obtained by an energy dispersive X-ray spectroscopy (EDS) method are superimposed, the composite member has: a region where silicon and carbon overlap and a region where silicon and carbon do not overlap in the distribution region of silicon; and a region where silicon and aluminum overlap in a region where silicon and carbon do not overlap.SELECTED DRAWING: Figure 5

A beam laser diode takes a silicon-based nitride epitaxial wafer as a carrier and comprises a silicon substrate layer, an aluminum nitride layer, a u-type gallium nitride layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, the p-type electrode is arranged on the p-type gallium nitride layer, and the n-type electrode is arranged on the edge of the n-type gallium nitride layer. A nitride material on a silicon substrate is used for preparing a micro-beam stress sensitive area LD by utilizing photoetching and ICP (Inductively Coupled Plasma) etching processes for emitting light, and after electrification, the laser LD is obtained in the stress sensitive area of the beam. Under the power-on condition, before and after acceleration loading, due to the fact that quantum limits the stark effect, the frequency wavelength of laser changes, and the magnitude of the acceleration can be sensed through difference frequency.

The invention relates to the technical field of ceramic materials, in particular to high-purity aluminum nitride ceramic and a preparation method thereof.The preparation method of the high-purity aluminum nitride ceramic comprises the following steps that S1, granulation is conducted, specifically, aluminum nitride, a dispersing agent and modified polyvinyl butyral are mixed and granulated; s2, dumping and sintering: performing thermal degreasing in a dumping furnace, setting the heating rate to be 0.5-1.5 DEG C / min, setting the degreasing temperature to be 500-600 DEG C, and keeping the temperature for 2-4 hours; s3, compression molding: pressing into a green body by using an isostatic press, and controlling the molding pressure to be 80-100Mpa; s4, hot pressed sintering: smearing the protective liquid on the surface of the green body, and sintering in a heating and pressurizing manner; and S5, cooling and grinding are conducted, specifically, the sintered body is cooled to the normal temperature and ground to be flat. According to the preparation method of the high-purity aluminum nitride ceramic, the obtained ceramic chip has good mechanical strength and compactness.

The invention discloses a method for preparing submicron aluminum nitride powder from aluminum oxide powder, carbon black and yttrium oxide auxiliaries. The preparation method specifically comprises the following steps: mixing alumina powder, carbon black and yttrium oxide in absolute ethyl alcohol according to a certain proportion, putting the mixed liquid and a certain mass of ball-milling beads into an alumina ball-milling tank, and carrying out ball-milling for a certain time in a planetary ball mill at a certain rotating speed; transferring the obtained mixture into a glass dish, and drying in a drying oven for a period of time to obtain a precursor mixture; and grinding the dried precursor mixture, placing the ground precursor mixture in an alumina crucible, nitriding in a nitrogen atmosphere, and decarburizing in an air atmosphere to obtain the aluminum nitride powder.

A packaging process of a temperature sensor chip comprises the following steps: selecting an aluminum nitride ceramic substrate, and selecting a gold-tin solder sheet with a corresponding size according to the size of the chip; cleaning the aluminum nitride ceramic substrate; manufacturing a double-sided metallization layer of the aluminum nitride ceramic substrate; cutting up the aluminum nitride ceramic substrate on which the metallization layer is deposited according to the size of the chip, then placing a metal tube shell on a sintering mold, placing a gold-tin solder piece on the metal tube shell, placing the cut aluminum nitride ceramic substrate on the gold-tin solder piece, placing the gold-tin solder piece on the aluminum nitride ceramic substrate again, and then placing the gold-tin solder piece on the aluminum nitride ceramic substrate again; and finally placing a chip. Putting the raw materials into an eutectic welding furnace for sintering; and a programmable vacuum eutectic welding furnace is selected for eutectic sintering, after welding is completed, after the temperature is reduced to 70 DEG C or below, a cavity door is opened, and the device is taken out. The beneficial effects are that the temperature sensing performance is high, the insulation effect is good, the technology is reasonable, the operation is simple, the production efficiency is high, and the method is suitable for industrial production.