2989 results about "Aluminium nitride" patented technology

A zinc oxide (ZnO) field effect transistor exhibits large input amplitude by using a gate insulating layer. A channel layer and the gate insulating layer are sequentially laminated on a substrate. A gate electrode is formed on the gate insulating layer. A source contact and a drain contact are disposed at the both sides of the gate contact and are electrically connected to the channel layer via openings. The channel layer is formed from n-type ZnO. The gate insulating layer is made from aluminum nitride/aluminum gallium nitride (AlN/AlGaN) or magnesium zinc oxide (MgZnO), which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a silicon metal oxide semiconductor field effect transistor (Si-MOS-type FET), resulting in the formation of an inversion layer.

Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure including a lower electrode. An ammonia (NH₃) plasma is provided onto the substrate to form a dielectric layer including aluminum nitride on the substrate including the lower electrode. An upper electrode is formed on the dielectric layer. A second dielectric layer may be provided oil the first dielectric layer

A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of a nitride or an aluminum nitride. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of a nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth nitride or aluminum nitride layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.

A method for forming an aluminum nitride-based film on a substrate by plasma-enhanced atomic layer deposition (PEALD) includes: (a) forming at least one aluminum nitride (AlN) monolayer and (b) forming at least one aluminum oxide (AlO) monolayer, wherein steps (a) and (b) are alternately conducted continuously to form a laminate. Steps (a) and (b) are discontinued before a total thickness of the laminate exceeds 10 nm, preferably 5 nm.

A nitride semiconductor device according to one embodiment of the present invention comprises: a non-doped first aluminum gallium nitride (Al_xGa_1-xN (0≦x≦1)) layer which is formed as a channel layer; a non-doped or n type second aluminum gallium nitride (Al_yGa_1-yN (0≦x≦1,x<y)) layer which is formed on the first aluminum gallium nitride layer as a barrier layer; an aluminum nitride (AlN) film which is formed on the second aluminum gallium nitride layer as a gate insulating film lower layer; an aluminum oxide (Al₂O₃) film which is formed on the aluminum nitride film as a gate insulating film upper layer; a source electrode and a drain electrode which are formed as first and second main electrodes to be electrically connected to the second aluminum gallium nitride layer, respectively; and a gate electrode which is formed on the aluminum oxide film as a control electrode.

High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.

A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.

A piezoelectric thin-film resonator includes a piezoelectric thin film which includes aluminum nitride containing Sc and which has a concentration distribution such that the concentration of Sc is non-uniform in a thickness direction of the piezoelectric thin film; a first electrode; a second electrode facing the first electrode across the piezoelectric thin film; and a substrate supporting a piezoelectric vibrating section defined by the piezoelectric thin film and the first and second electrodes.

A method to repair Aluminum Nitride (AlN) substrates is disclosed wherein a frequency doubled Q-switched Nd:YAG laser is used to remove unwanted metallurgy. The substrate is place in a liquid filled work chamber which acts to prevent metallic species of AlN from forming. The repair site can be sealed with a novel polymer coating to prevent contamination or corrosion. Repairs can be made to buried or surface metallurgy.

A thermocured, heat conductive and heat radiating paint for an LED lamp is prepared by the following raw materials by weight: 40-45 parts of polyacrylic resin, 5-8 parts of polyurethane resin, 4-6 parts of polyacrylamide, 6-8 parts of isophorone diamine IPDA, 20-24 parts of xylene, 2-3 parts of silane coupling agent KH550, 1-2 parts of aluminium powder, 8-12 parts of ethyl acetate, 2-4 parts of benzyltrimethylammonium tribromide, 10-12 parts of aluminium nitride, 2-3 parts of beryllia, and 4-5 parts of film forming auxiliary agent. Aluminium nitride powder, the beryllia and the aluminium powder are added, so as that the paint has high heat conduction rate and good heat radiation effect, and can be long-term used under 200 DEG C without change of mechanical property; polyacrylic resin is used, so as that the paint has advantages of excellent fullness, glossiness, hardness, solvent resistance and weatherability, without color change and brightness reversion when high temperature baked; and the paint has advantages of large adhesion stress, not-easy shedding, aging resistance and long usage life.

Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10⁶ cm⁻².

A heat sink for cooling a heat generating device comprises a body part with a first surface for contacting the heat generating device, and a second surface contacting a cooling part, and the cooling part including a cooling structure. The structure density of the cooling structure decreases with increasing distance to body part. The cooling structure may be a three dimensional structure e.g. a grid or a lattice, but the cooling structure may also be fins projecting or extending from the second surface of the body part. The heat sink can be manufactured using additive manufacturing e.g. selective laser melting process (SLM). The heat sink can be made of metals e.g. aluminum, copper, ceramics e.g. aluminium nitride (AlN), silicon carbide or a composite containing graphite, graphene or carbon nanotubes.

A diamond-coated member includes a basal material such as aluminum nitride, and a diamond thin film coating at least one part of a surface of the basal material, being adhered thereto, and has corrosion-erosion resistance. Adhesion strength between the thin film and the basal material is 15 MPa or more. Or, in diamond thin film, degree of orientation of diamond {220} plane present in faces parallel to the basal material is expressed by following formula: [Im220/(Im220+Im111)]/[Ip220/(Ip220+Ip111)]<1. The diamond-coated corrosion-erosion resistant member has excellent corrosion-erosion resistance, and is used mainly for a semiconductor producing apparatus; being preferably applied as a member inside a reaction chamber where a substrate, represented by silicon wafer, is exposed to plasma, corrosion gas or the like, inclusive of rings, a chamber inner lining, a gas shower plate, nozzles, a susceptor, an electrostatic chuck, a heater, or the like.

A method of growing bulk single crystals of an AlN on a single crystal seed is provided, wherein an AlN source material is placed within a crucible chamber in spacial relationship to a seed fused to the cap of the crucible. The crucible is heated in a manner sufficient to establish a temperature gradient between the source material and the seed with the seed at a higher temperature than the source material such that the outer layer of the seed is evaporated, thereby cleaning the seed of contaminants and removing any damage to the seed incurred during seed preparation. Thereafter, the temperature gradient between the source material and the seed is inverted so that the source material is sublimed and deposited on the seed, thereby growing a bulk single crystal of AlN.