715 results about "Aluminium nitride" patented technology

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

The invention belongs to the field of heat conduction materials, and particularly relates to gradient interface modified aluminum oxide-aluminum nitride bi-component heat conduction filler and a preparation method thereof, and the gradient interface modified aluminum oxide-aluminum nitride bi-component heat conduction filler comprises spherical aluminum oxide, flaky aluminum nitride and double gradient modified layers coating the surfaces of the spherical aluminum oxide and the flaky aluminum nitride; the D50 of the spherical aluminum oxide is 2-5 microns, and the sphericity is greater than or equal to 0.85; the sheet-shaped aluminum nitride is in a hexagonal sheet shape, the average particle size is 8-12 microns, the thickness is 200-500 nanometers, and the radius-thickness ratio is 20-50; the mass ratio of the spherical aluminum oxide to the flaky aluminum nitride is (40-70): (30-60); the double-layer gradient modification layer comprises an inner-layer hydrophobic silane layer and an outer-layer reactive silane layer, the inner-layer hydrophobic silane layer is formed by grafting alkyl trialkoxy silane with the carbon chain length of 8-16, the outer-layer reactive silane layer is formed by grafting a silane coupling agent containing an epoxy group or an amino group, and morphological complementary optimization of a filler network is achieved.

An aluminum nitride ceramic welding assembly comprises a first aluminum nitride ceramic piece, a second aluminum nitride ceramic piece and a third aluminum nitride ceramic piece, a second pin hole corresponding to the first pin hole is formed in the welding surface of the second aluminum nitride ceramic piece; two ends of the aluminum nitride ceramic positioning pin are respectively inserted into the first pin hole and the second pin hole; and the slurry layer containing rare earth oxide is arranged on the welding surface of the first aluminum nitride ceramic piece, and the distribution density of the rare earth oxide is gradually reduced from the position close to the first aluminum nitride ceramic piece to the position far away from the first aluminum nitride ceramic piece. High-temperature displacement errors are eliminated by means of cooperative positioning of pin holes in the first aluminum nitride ceramic piece and the second aluminum nitride ceramic piece and aluminum nitride ceramic positioning pins; and meanwhile, generation of brittle phases is inhibited by utilizing a form that the distribution density of rare earth oxides in the slurry layer is gradually reduced from near to far, so that the effects of a high-precision welding interface and joint strength enhancement are obtained, and the reliability and the service life of the aluminum nitride ceramic component are improved.

The invention relates to the field of aluminum nitride ceramic substrates, provides a preparation method of a high-thermal conductivity aluminum nitride substrate, and solves the defects of low thermal conductivity and insufficient mechanical strength of an aluminum nitride substrate obtained by adopting a preparation method in the prior art. Comprising the following preparation processes: (1) preparing raw materials and auxiliary materials; (2) mixing the raw materials and the auxiliary materials; (3) tape casting; (4) aging; (5) pre-flattening treatment; (6) sintering; and (7) post-treatment.

The invention provides a preparation method and application of ceramic slurry for high-temperature bonding of aluminum nitride ceramics, and relates to the technical field of high-temperature ceramic materials.The preparation method comprises the following steps that firstly, an organic carrier is prepared, a polymer binder, an organic solvent, a plasticizer and a dispersing agent are weighed according to the weight ratio and stirred at the temperature of 60-70 DEG C till complete dissolution and clarification are achieved for use; 2, an inorganic functional phase is prepared, aluminum nitride powder, yttrium oxide powder and alkaline earth metal oxide powder are weighed according to the weight proportion and placed in a ball milling tank to be evenly mixed, the obtained ceramic slurry serves as a bonding layer, the tolerable temperature can reach 1000 DEG C or above and is far higher than that of metal brazing filler metal, and the ceramic slurry is suitable for severe environments such as aerospace and high-temperature sensors. The main components of the bonding layer are consistent with the base material, and the thermal expansion coefficient is highly matched, so that the thermal stress can be greatly relieved, and the failure of the device caused by thermal fatigue in the temperature cycle is avoided.

The present application relates to high speed, high efficiency SiC power modules. A power converter module includes an active metal brazing (AMB) substrate, a power converter circuit, and an enclosure. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuit includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The enclosure is disposed over the power converter circuit and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, thermal dissipation of the power converter module can be significantly improved while maintaining structural integrity of the power converter module.

Disclosed herein are a microelectromechanical system (MEMS) devices comprising a first electrode layer, an aluminum nitride based piezoelectric layer, and a second electrode layer. The aluminum nitride based piezoelectric layer comprises a piezoelectric material of formula AlxScyYbzN, wherein x+y+z=1. Also disclosed are acoustic components comprising the piezoelectric material.

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The invention discloses a preparation method of high-purity aluminum nitride single crystal powder. The method comprises the following steps: uniformly mixing raw materials aluminum powder and aluminum nitride powder according to a ratio, putting the mixture into an air pressure sintering furnace, vacuumizing, introducing high-pressure argon, heating to a set temperature, introducing nitrogen, carrying out a fire blast reaction, cooling to room temperature, and crushing to obtain the high-purity aluminum nitride single crystal powder with D50 of 20-200 microns. According to the method, the synthesis of the coarse-particle high-purity aluminum nitride single crystal powder is realized by utilizing the rapid nitridation explosion reaction of the aluminum powder in the high-temperature and high-pressure nitrogen, the method has the characteristics of simple process and low preparation cost, and the prepared high-purity aluminum nitride single crystal powder can be used as a high-thermal-conductivity filler for electronic packaging.

The invention provides a steel surface defect online detection method, device and system and a storage medium, and relates to the technical field of defect detection. The method comprises the following steps: acquiring a preset reference spot map; wherein the reference spot map is obtained by establishing a coordinate system for a first aluminum nitride spot image on the surface of a defect-free steel sample under a scanning electron microscope; after the target steel leaves the annealing furnace, generating raised aluminum nitride spots on the surface of the target steel through a pulse nitriding process by utilizing the residual temperature of the target steel; collecting a second aluminum nitride spot image on the surface of the target steel, converting the second aluminum nitride spot image into the coordinate system, and generating an online spot map; and taking the reference spot map as priori knowledge of a pre-trained defect identification model, inputting the online spot map into the defect identification model, and identifying the defect of the target steel. According to the invention, the interference of the steel surface condition and the image quality can be overcome, and the online detection accuracy and efficiency of the steel are improved.

The invention discloses a high-thermal-conductivity aluminum nitride ceramic substrate based on dynamic pressure and a preparation method thereof, and the preparation method comprises the following steps: step 1, filling aluminum nitride ceramic powder into a mold, heating to a pre-sintering temperature for pre-sintering, and cooling to obtain a pre-sintered green body; the pre-sintering temperature is 1300 to 1600 DEG C; basic static pressure is loaded in the heating stage, and after the presintering temperature is reached, dynamic pressure is superposed for heat preservation for 1-300 min; step 2, raising the temperature of the pre-sintered green body to a sintering temperature, and sintering; the sintering temperature is 1600 to 2100 DEG C; basic static pressure is loaded in the heating stage, and after the sintering temperature is reached, dynamic pressure is superposed, and heat preservation is conducted for 1-600 min; step 3, carrying out heat treatment on the sintered ceramic green body to obtain the required ceramic substrate after heat treatment; the performance uniformity of the AlN ceramic structure can be effectively improved through mutual cooperation of pre-sintering and sintering under dynamic pressure, the density of the ceramic is improved, the heat conductivity of the ceramic substrate is improved, and the preparation process and the process period are shortened.

The invention discloses a mica insulation box of a battery module for a new energy automobile. The mica insulation box comprises a box body, and a mounting cavity and a heat exchange cavity are formed in the box body; the heat conduction shell is fixedly installed on the inner wall of the heat exchange cavity, and a heat exchange channel is reserved between the heat conduction shell and the inner wall of the heat exchange cavity; through the arrangement of the heat conduction shell, the liquid cooling assembly and the refrigeration assembly, a multi-layer heat dissipation system is formed, and the heat conduction shell is made of an aluminum nitride ceramic heat conduction material, so that heat generated by the battery module can be quickly conducted out; the heat exchange tube in the liquid cooling assembly is tightly attached to the heat conduction shell, cooling liquid circularly flows in the heat exchange tube, and a large amount of heat is taken away. The cooling liquid is refrigerated and cooled by the refrigeration assembly, so that the heat dissipation efficiency is further improved, the temperature of the battery is effectively controlled within a reasonable range, the performance and the service life of the battery are guaranteed, and the use safety and the reliability of the new energy automobile are improved.

The invention discloses an aluminum nitride composite substrate, a preparation method thereof and a semiconductor device. The preparation method comprises the following steps: sequentially forming a sacrificial layer and an aluminum nitride epitaxial layer on a heterogeneous substrate; temporarily bonding a supporting substrate on the aluminum nitride epitaxial layer through bonding glue to obtain a first bonding structure; dissociating the sacrificial layer to separate the heterogeneous substrate of the first bonding structure from the aluminum nitride epitaxial layer to obtain a second bonding structure exposing a first separation surface of the aluminum nitride epitaxial layer; bonding a polycrystalline aluminum nitride ceramic substrate on the first separation surface of the aluminum nitride epitaxial layer to obtain a third bonding structure; dissociating the bonding glue to separate the supporting substrate and the aluminum nitride epitaxial layer in the third bonding structure to obtain a fourth bonding structure exposing a second separation surface of the aluminum nitride epitaxial layer; and growing an aluminum nitride single crystal wafer on the second separation surface of the aluminum nitride epitaxial layer to obtain the aluminum nitride composite substrate. By adopting the scheme, the high-quality aluminum nitride composite substrate can be prepared.

This application provides a passivation structure and its preparation method, as well as a silicon solar cell and its preparation method. The passivation structure includes a first aluminum oxide layer, a first aluminum nitride layer, a second aluminum oxide layer, and a second aluminum nitride layer stacked together. The first aluminum oxide layer directly contacts the silicon edge and repairs cutting damage and dangling bonds through chemical passivation. It adapts to the p-type silicon region with a negative fixed charge. The first aluminum nitride layer passivates the n-type silicon with a positive fixed charge. The high hydrogen content enhances defect repair, and the dense structure blocks impurities from intruding. The second aluminum oxide layer supplements the negative charge to improve the passivation effect of the p-type silicon and forms stress complementarity with the aluminum nitride layer to prevent film cracking. The second aluminum nitride layer resists stringing and lamination damage, blocks moisture and corrosion, and ensures long-term performance. This structure achieves optimal simultaneous passivation of p / n-type silicon through charge complementarity and synergistic hydrogen passivation, improving the minority carrier lifetime at the cell edge, the implicit open-circuit voltage, and the module power, and solving the pain points of incomplete passivation and poor stability.

The invention provides a modified heat-conducting filler, a pouring sealant and a photovoltaic module, the modified heat-conducting filler comprises a modified heat-conducting filler base material and a surface modifier coating at least part of the surface of the modified heat-conducting filler base material, and the modified heat-conducting filler base material is aluminum nitride, boron nitride and silicon carbide; the particle size of the aluminum nitride is 150-200 nm, the particle size of the boron nitride is 50-80 nm, the particle size of the silicon carbide is 80-150 nm, and the mass ratio of the aluminum nitride to the boron nitride to the silicon carbide is (35-45): (25-35): (10-20). The modified heat-conducting filler provided by the invention can synergistically improve the heat conductivity, weather resistance stability, high light transmittance and curing efficiency of the pouring sealant by virtue of the high-heat-conductivity modified heat-conducting filler base material, the gradient particle size range, the mass ratio and the surface modifier.

The invention relates to the technical field of electronic devices, discloses a low-thermal-resistance insulation integrated top heat dissipation power device, and aims to solve the problems that a traditional power device is high in thermal resistance, insufficient in insulation reliability and complex in assembly. The device comprises a frame base island, an insulating layer, a SiC chip, a bonding aluminum wire, a pin, an injection molding body and a metal heat dissipation top cover, the insulating layer is a high-thermal-conductivity ceramic layer such as aluminum nitride, the thickness of the insulating layer is 20-150 micrometers, the insulating layer and the frame base island are integrated through high-temperature oxidation bonding, and the metal heat dissipation top cover is bonded with the insulating layer in a low-thermal-resistance mode. An external insulation part is not needed, the assembly process is simplified, an efficient heat dissipation channel is constructed, contact thermal resistance is reduced, meanwhile, wide-temperature-range insulation stability is guaranteed, long-term operation reliability and service life of the device are improved, and the structure is suitable for a high-power-density power electronic scene.

The invention relates to the field of light-emitting devices, and discloses an LED light-emitting device and a manufacturing method thereof, and the LED light-emitting device comprises a composite substrate which comprises an aluminum oxide ceramic substrate and an aluminum nitride ceramic block body; the aluminum oxide ceramic substrate is provided with a hollow area, and the aluminum nitride ceramic block is located in the hollow area; the LED chip is fixed on the upper surface of the aluminum nitride ceramic block body; the box dam is fixed on the upper surface of the composite substrate, the inner surface, facing the LED chip, of the box dam is an inclined surface, and the inclined surface inclines towards the center far away from the composite substrate; all the LED chips are located in the range of the box dam; a first reflective layer on the inclined surface; and the packaging colloid is used for packaging the LED chip. By designing the composite substrate and the box dam with the inner surface being the inclined surface, the lighting effect and the light spot quality of the LED light-emitting device can be improved, and meanwhile the edge yellowing phenomenon is eliminated.

The utility model provides a connecting structure of a battery cell aluminum row and an upper water-cooling plate. The connecting structure comprises a battery pack box body, the upper water-cooling plate is arranged at the top of the battery pack box body through a fastener, and the sealing gasket is arranged at the bottom of the upper water-cooling plate. According to the connecting structure of the battery cell aluminum row and the upper water-cooling plate, the aluminum nitride heat conduction block is clamped on the outer surface of the aluminum row, the heat conduction silica gel pads are arranged on the upper side and the lower side of the outer surface of the aluminum nitride heat conduction block, and the aluminum nitride heat conduction block structure is used for connecting the battery cell, the aluminum row and the upper water-cooling plate, so that the connecting structure has high heat conduction performance and high insulativity; the heat of the aluminum row can be quickly transferred to the water-cooling plate, and the water-cooling plate has high insulativity, does not cause short circuit of the battery, improves the connection effect of the battery cell, the aluminum row and the water-cooling plate, and improves the heat dissipation capability of the battery cell and the aluminum row.

The invention discloses a manufacturing method of a three-dimensional system chip based on an aluminum nitride bonding structure and the three-dimensional system chip, and belongs to the field of advanced packaging of semiconductors. The manufacturing method comprises the following steps: providing a mother wafer, wherein the surface of the mother wafer is provided with a mother core metal electrode array; providing at least one sub-core particle, wherein the surface of the sub-core particle is provided with a sub-core metal electrode array; forming an aluminum nitride bonding layer in a non-electrode interconnection area on the surface of the mother wafer and / or the surfaces of the sub core particles; and stacking and aligning the sub-core particles and the mother wafer, and bonding through the aluminum nitride bonding layer, so that the mother core metal electrode array and the sub-core metal electrode array are vertically interconnected. According to the invention, aluminum nitride is used as a bonding and filling medium, and has the characteristics of high insulativity and high thermal conductivity, so that high-density and high-reliability electrical interconnection is realized, an efficient heat dissipation channel is provided for the high-power-consumption core particles, and the technical problem that heat dissipation and insulation in traditional three-dimensional integration are difficult to collaboratively optimize is solved.

This invention relates to an epitaxial wafer structure and its fabrication method. The epitaxial wafer structure includes: a silicon substrate layer; a nucleation layer disposed on the silicon substrate layer, wherein the nucleation layer includes an aluminum nitride layer; a buffer layer disposed on the nucleation layer, wherein the buffer layer includes an indium-doped aluminum gallium nitride layer; a gallium nitride channel layer disposed on the buffer layer; and an aluminum gallium nitride barrier layer disposed above the gallium nitride channel layer. This embodiment, by doping the buffer layer with indium, prevents substrate loss in the epitaxial wafer structure, reduces defects in the epitaxial layer, and improves the quality of the epitaxial wafer structure.

A magnetic recording medium includes a nonmagnetic substrate, an underlayer disposed above the nonmagnetic substrate, and a magnetic recording layer disposed above the underlayer. The magnetic recording layer includes a first magnetic layer disposed above the underlayer, and a second magnetic layer disposed above the first magnetic layer. Each of the first magnetic layer and the second magnetic layer has a granular structure including magnetic grains having a L10 structure and a grain boundary portion. The grain boundary portion of the first magnetic layer includes aluminum nitride, and the grain boundary portion of the second magnetic layer includes hexagonal boron nitride. An aluminum nitride content in the first magnetic layer is in a range of 15 vol % to 35 vol %, and a peak in a B1s spectrum of the grain boundary portion of the second magnetic layer observed using X-ray photoelectron spectroscopy is 191.6 eV or less.

The invention discloses a preparation method of a high-porosity aluminum nitride powder precursor, and belongs to the technical field of electronic ceramics, and the preparation method comprises the following steps: S1, raw material mixing: uniformly stirring and mixing water, an aluminum source, a carbon source, aluminum sol and a thickening agent in proportion to form slurry; s2, stirring and foaming: adding a foaming agent into the uniformly mixed slurry in the step S1, and stirring and foaming until the volume of the slurry is increased to 2.5 times or more; s3, injection molding and solidification: adding a curing agent into the foamed slurry in the step S2, continuously stirring, then performing injection molding and solidification on the slurry to obtain an aluminum nitride precursor, and drying to obtain a high-porosity aluminum nitride powder precursor; s4, the dried high-porosity aluminum nitride powder precursor in the step S3 is put into a vacuum sintering furnace to be subjected to a carbon thermal reduction nitridation reaction, and the aluminum nitride powder is obtained.According to the method, the gas replacement circulation effect in the nitridation process can be optimized, the situation that a gas path is blocked due to collapse of precursor blocks is effectively prevented, and then the nitridation reaction stability and the powder quality are guaranteed.

The application relates to the technical field of bulletproof masks, in particular to a full-effect light multi-functional bulletproof protective mask and a preparation method thereof. The preparation method comprises the following steps: mixing aluminum nitride, aluminum oxide and yttrium oxide by wet ball milling, pre-pressing, cold isostatic pressing, sintering, hot isostatic pressing, polishing and obtaining an aluminum oxynitride transparent ceramic plate; hot-pressing forming PC middle plates and PC lining plates, cleaning, coating with a silane coupling agent, spraying a fog-proof coating on the PC lining plates, and baking; obtaining pretreated PC lining plates and pretreated PC middle plates; taking the pretreated PC lining plates, laying TPU-UHMWPE transparent weftless sheets, laying the pretreated PC middle plates, laying PU glue, laying the aluminum oxynitride transparent ceramic plate, bagging, hot-pressing, standing, edge sealing, curing and obtaining a full-effect light multi-functional bulletproof protective mask. The full-effect light multi-functional bulletproof protective mask and the preparation method thereof have the advantages that the prepared bulletproof protective mask is light in quality, good in bulletproof effect and high in light transmittance.

The application discloses a hydraulic system for stabilizing pressure of a hot-pressing sintering aluminum nitride heater, which comprises a main oil tank and a stamping oil cylinder; the main oil tank is connected with a first main oil path, the first main oil path is connected with an upper cylinder total oil path and a lower cylinder oil path through a first two-position cartridge valve, the upper cylinder total oil path is connected with an inner cylinder oil path and the main oil tank through a second two-position cartridge valve, and an outer cylinder oil path is connected with the inner cylinder oil path through a cartridge valve; the first main oil path, a second main oil path and a third main oil path are connected with a pressure compensation main oil path; a first hydraulic control check valve is arranged on the inner cylinder oil path and the outer cylinder oil path, the first hydraulic control check valve is connected with a first pressure relief oil path connected with the second main oil path, and the inner cylinder oil path and the outer cylinder oil path are connected with a second pressure relief oil path between the first hydraulic control check valve and the stamping oil cylinder. The design of the inner cylinder and the outer cylinder can realize controllable pressure relief range of the stamping oil cylinder, the pressure relief oil path makes the stability of the pressurizing rate good, and the pressure fluctuation is small during the pressure relief process.

This utility model relates to the field of laser heat dissipation technology, and discloses a water-cooled heat dissipation structure for a laser, including a cover plate, a flow divider plate, and an interface plate. The cover plate is made of aluminum nitride and has a smooth top surface. The interface plate has spaced-apart inlet and outlet water channels. The flow divider plate is disposed between the cover plate and the interface plate, and is fixedly connected to both the cover plate and the interface plate. The flow divider plate has a flow area that communicates with the inlet and outlet water channels to form a water-cooled flow path. By using an aluminum nitride cover plate, aluminum nitride is easier to process, has a higher surface flatness, which is beneficial for the installation of the laser chip. Furthermore, the thermal expansion coefficient of aluminum nitride matches well with that of the laser chip, helping to reduce stress during use.

The application discloses an aluminum nitride film circuit substrate and a preparation method thereof, and relates to the technical field of aluminum nitride substrates.The application is characterized by the following steps: a titanium film is plated on the surface of an aluminum nitride ceramic substrate by magnetron sputtering, and then a copper film is plated on the surface of the titanium film by magnetron sputtering; and a nickel film is plated on the surface of the copper film by a chemical plating method to prepare the aluminum nitride film circuit substrate.Through the titanium-copper gradient dynamic transition technology, a gradient alloy layer is formed to reduce the interface stress; the titanium and the surface of the aluminum nitride are combined through a chemical bond to form a dense transition layer, thereby relieving the difference in the thermal expansion coefficient; the copper enhances the conductive performance of the surface of the aluminum nitride ceramic substrate; the titanium compensates for the interface defects of the mismatch between the copper and the aluminum nitride ceramic lattice; the chemical nickel plating enhances the hardness and corrosion resistance of the aluminum nitride ceramic substrate, and the aluminum nitride film substrate is endowed with weldability and bondability.

Provided is a ceramic plate in which the adhesion strength between a ceramic substrate and an internal electrode is improved. This ceramic plate is provided with: a ceramic substrate containing aluminum oxide and / or aluminum nitride; and an internal electrode that contains an electrode base material, a coefficient of thermal expansion adjusting material, and Ti and is implanted in the ceramic substrate, the ceramic substrate having a Ti diffusion region in which Ti diffuses around the internal electrode.

Provided is a ceramic heater capable of exhibiting improved thermal uniformity while maintaining corrosion resistance to corrosive gases such as halogen-based gases. This ceramic heater comprises: a ceramic plate assembly including an upper ceramic plate and a lower ceramic plate joined together at joining surfaces thereof; and a heater electrode embedded only in the lower ceramic plate. The upper ceramic plate includes a first ceramic material containing magnesium, aluminum, oxygen, and nitrogen as main components, and the first ceramic material contains, as a main phase, a magnesium-aluminum oxynitride phase in which a peak is observed at least at 2θ=47-50° in an XRD profile obtained by using Cu K alpha rays. The lower ceramic plate includes a second ceramic material containing yttrium, aluminum, oxygen, and nitrogen in a mixing ratio of 10-30 parts by weight of yttrium oxide to 100 parts by weight of aluminum nitride.

The application discloses a preparation method of sheet-shaped aluminum nitride ceramic powder and a product thereof. In the application, deionized water is used as a dispersion medium, Al2O3 powder, carbon black and Na3AlF6 are uniformly mixed through ball milling, and a precursor is obtained through drying; and the precursor is subjected to a carbon thermal reduction reaction and a nitriding reaction in a flowing nitrogen atmosphere to obtain micron-grade sheet-shaped aluminum nitride ceramic powder. The application can directly generate sheet-shaped AlN without pre-preparing a sheet-shaped template, and solves the technical defects of existing processes which depend on the morphology of a precursor.