1633 results about "Aluminium nitride" patented technology

The invention discloses a high-strength and high-toughness aluminum nitride ceramic and a preparation method thereof, and relates to the technical field of ceramics, a sol-gel method is adopted to coat the surface of aluminum nitride with a stable shell layer to form a core-shell structure, meanwhile, the low lattice mismatch rate of a core-shell interface is utilized to reduce thermal resistance, and toughness and thermal conductivity are both considered; according to the external magnetic field tape casting method, the magnetic dipole moment orientation principle is utilized, an external magnetic field is applied in the tape casting stage, the in-plane mechanical property is improved, and the fracture toughness is improved through the magnetism of aluminum nitride whiskers; a reinforcement is introduced to improve the mechanical property and corrosion resistance of the aluminum nitride ceramic material, multi-granularity powder is compounded, large-particle aluminum nitride powder is used as a sintering and heat-conducting framework material, and high activity provided by submicron particles is utilized to promote sintering, so that the sintering temperature of aluminum nitride can be remarkably reduced, and the performance is greatly improved; and the aluminum nitride substrate expands more application fields on a future packaging circuit.

The present application belongs to the field of polymer material technology, and in particular, relates to a polyimide composite material, a preparation method thereof, and an application thereof. The preparation method of the polyimide composite material comprises the steps of: preparing a polyamic acid slurry from a diamine monomer, a dianhydride monomer, and an organic solvent; preparing a mixed slurry from the polyamic acid slurry and a nanomaterial, and then performing a spinning imidization treatment to obtain a polyimide composite material; wherein the nanomaterial comprises at least one of nano silicon carbide, aluminum nitride, carbon nanotubes, graphene, and nano silicon dioxide. By blending polyimide with other nanomaterials having high thermal conductivity to improve its thermal conductivity, the thermal conductivity of the polyimide composite material is optimized and improved, and its heat dissipation capacity in a high temperature working environment is enhanced, while having high tensile strength and thermal conductivity. The service life of the polyimide composite material is extended, and its application range can be further expanded, such as in the back panel assembly of a smartphone.

The invention relates to the field of ceramic materials, in particular to a high-temperature-resistant composite ceramic material and a preparation method thereof.The high-temperature-resistant composite ceramic material is prepared from, by weight, 80-100 parts of zirconium oxide, 10-20 parts of silicon carbide, 5-10 parts of aluminum nitride, 1-5 parts of a sintering aid and 5-10 parts of modified silicon powder; the modified silicon powder takes nano silicon powder as a core body, the core body is sequentially coated with a transition metal organic polymer and oxidized asphalt, and the prepared composite ceramic material is good in mechanical strength and excellent in high temperature resistance and has important application value in the field of aerospace.

The invention discloses a preparation method of aluminum nitride by spray granulation, which belongs to the technical field of ceramic preparation. The method comprises: adding aluminum nitride powder and a dispersant into a ball mill for ball milling for 24 to 26 hours, adding an adhesive and a solvent thereto, wherein the adhesive is acrylic resin or PVB, and continuing ball milling for 15 to 18 hours after the adhesive and the solvent are added, the ball milling speed of the ball mill is set to 100 to 200 rpm, the diameter of the ball milling beads is 20 to 50 mm, the number of the ball milling beads is 200 to 300, and aluminum nitride slurry is formed after ball milling; the aluminum nitride slurry is sucked into a granulation tower, and the parameters of the granulation tower are set to: an air inlet temperature of 130 to 140 DEG C, an air outlet temperature of 80 to 90 DEG C, a rotation speed of an atomizing disk of 7000 to 8000 rpm, and a feed pump rotation speed of 50 to 60 rpm; collecting samples at a discharge port of the granulation tower, and then testing the samples and recording the test results.

The invention relates to the technical field of porcelain, in particular to porous antioxidant composite porcelain and a preparation method thereof, and the preparation method comprises the following steps: weighing the following raw materials in parts by weight: 35-40 parts of clay, 10-15 parts of aluminum oxide, 6-10 parts of an aluminum nitride-doped modified homogenizing agent, 5-9 parts of kaolin and 5-8 parts of a sodium silicate blender. According to the porous anti-oxidation composite porcelain, clay is adopted as a matrix, aluminum oxide and kaolin are added to be matched with an aluminum nitride modified homogenizing agent and a sodium silicate blender, the raw materials are blended and synergized, compression molding is performed, and finally homogenizing sintering is performed, so that the porous anti-oxidation composite porcelain is obtained. The porous performance, the high-temperature oxidation resistance and the mechanical bending strength performance of the obtained composite porcelain are harmoniously improved, and meanwhile, the stability effect of the product is remarkable under different degrees of corrosion conditions.

The present invention relates to the technical field of aluminum nitride synthesis, and specifically discloses a method for preparing aluminum nitride powder, S1, aluminum powder and aluminum nitride powder are mixed to obtain a first mixture; aluminum chloride powder and ammonium salt are mixed to obtain a second mixture; S2, the first mixture is spread on a material frame padded with a first carbon felt, and the second mixture is sealed in a closed container surrounded by the second carbon felt, and the closed container is on the upper surface, lower surface or middle position of the first mixture; S3, vacuuming and injecting nitrogen, and applying electricity to induce the first mixture to undergo a self-propagating combustion synthesis reaction, and to cause the second mixture to undergo a gas phase synthesis reaction. This key technology combines combustion synthesis with gas phase synthesis to overcome the problems of difficult control of combustion synthesis of aluminum nitride, low purity of the obtained product, and coarse and uneven grain size, and can simultaneously prepare micron-level powder and nano-level powder by partitioning.

To suppress spurious responses and also suppress degradation of main responses.SOLUTION: An elastic wave device 100 includes: a supporting substrate 10; a piezoelectric layer 14 formed on the supporting substrate 10; a pair of comb-shaped electrodes 20 provided on the piezoelectric layer 14; a first insulation layer 11 formed between the supporting substrate 10 and the piezoelectric layer 14, the first insulation layer being made of one of polycrystal or amorphous oxide aluminum and polycrystal or amorphous polysilicon; and a second insulation layer 12 formed between the first insulating layer 11 and the piezoelectric layer 14, the second insulation layer being made of aluminum nitride, silicon nitride, silicon carbide, or diamond-like carbon and having a first surface 60 adjacent to the first insulation layer 11 and a second surface 61 adjacent to the piezoelectric layer 14, and the first surface being rougher than the second surface.SELECTED DRAWING: Figure 1

The invention belongs to the field of microelectronics, and particularly relates to a preparation method and application of a ferroelectric diode based on a scandium-doped aluminum nitride thin film, and the ferroelectric diode is prepared through the following steps: S1, growing an adhesion layer on a substrate through magnetron sputtering; s2, growing a bottom electrode on the adhesion layer through magnetron sputtering; s3, growing a ferroelectric film on the bottom electrode through magnetron co-sputtering at room temperature; s4, coating photoresist on the ferroelectric film, and exposing and developing; s5, growing a top electrode on the exposed and developed ferroelectric film through magnetron sputtering; and S6, stripping to obtain the ferroelectric diode. Compared with the prior art, the method has the advantages that the problems of high preparation temperature of the Al1-xScxN layer and large thickness of the Al1-xScxN layer in the prior art are solved, the ferroelectric diode memory of the scandium-doped aluminum nitride film is prepared at room temperature for the first time, and compatibility with a CMOS (complementary metal oxide semiconductor) process is better realized.

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

The invention discloses a preparation method of flaky aluminum nitride ceramic powder and a product thereof. The preparation method comprises the following steps: by taking deionized water as a dispersion medium, uniformly mixing Al2O3 powder, carbon black and Na3AlF6 through ball milling, and drying to obtain a precursor; and in a flowing nitrogen atmosphere, the precursor is subjected to a carbon thermal reduction reaction and a nitridation reaction to obtain the micron-sized flaky aluminum nitride ceramic powder. According to the method, a flaky template does not need to be prepared in advance, flaky AlN can be directly generated, and the technical defect that an existing process depends on precursor morphology is overcome.

In accordance with some embodiments of the present disclosure, a memory device is provided. The memory device may include a first electrode, a ferroelectric layer fabricated on the first electrode, and a second electrode fabricated on the ferroelectric layer. The ferroelectric layer includes a plurality of ferroelectric films and a plurality of interface layers stacked alternately. Each of the ferroelectric films comprises at least one ferroelectric material, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), zirconium-doped hafnium oxide (Hf1-xZrxO2), scandium-doped aluminum nitride (Al1-xScxN), titanates (BaTiO3), niobates (LiNbO3), tantalates (NaTaO3), etc. Each of the interface layers comprises at least one dielectric material that is more chemically stable than the ferroelectric material, such as aluminum oxide.

A beam laser diode takes a silicon-based nitride epitaxial wafer as a carrier and comprises a silicon substrate layer, an aluminum nitride layer, a u-type gallium nitride layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, the p-type electrode is arranged on the p-type gallium nitride layer, and the n-type electrode is arranged on the edge of the n-type gallium nitride layer. A nitride material on a silicon substrate is used for preparing a micro-beam stress sensitive area LD by utilizing photoetching and ICP (Inductively Coupled Plasma) etching processes for emitting light, and after electrification, the laser LD is obtained in the stress sensitive area of the beam. Under the power-on condition, before and after acceleration loading, due to the fact that quantum limits the stark effect, the frequency wavelength of laser changes, and the magnitude of the acceleration can be sensed through difference frequency.

The invention relates to the technical field of ceramic materials, in particular to high-purity aluminum nitride ceramic and a preparation method thereof.The preparation method of the high-purity aluminum nitride ceramic comprises the following steps that S1, granulation is conducted, specifically, aluminum nitride, a dispersing agent and modified polyvinyl butyral are mixed and granulated; s2, dumping and sintering: performing thermal degreasing in a dumping furnace, setting the heating rate to be 0.5-1.5 DEG C / min, setting the degreasing temperature to be 500-600 DEG C, and keeping the temperature for 2-4 hours; s3, compression molding: pressing into a green body by using an isostatic press, and controlling the molding pressure to be 80-100Mpa; s4, hot pressed sintering: smearing the protective liquid on the surface of the green body, and sintering in a heating and pressurizing manner; and S5, cooling and grinding are conducted, specifically, the sintered body is cooled to the normal temperature and ground to be flat. According to the preparation method of the high-purity aluminum nitride ceramic, the obtained ceramic chip has good mechanical strength and compactness.

A ceramic susceptor particularly with excellent volumetric resistance at high temperatures and thermal conductivity at room temperature compared to a typical ceramic susceptor and a method for manufacturing the same are disclosed. The ceramic susceptor is characterized by comprising alumina (Al2O3); and aluminum nitride (AlN), and not comprising a secondary phase including an aluminum oxynitride phase (AlON phase).

The invention provides a long carbon chain polyamide resin composition as well as a preparation method and application thereof, and the long carbon chain polyamide resin composition comprises the following components in parts by weight: 35-70 parts of long carbon chain polyamide resin, 4-22 parts of reinforcing filler, 10-40 parts of ceramic forming filler and 2.5-22 parts of ablation filler, the ceramic forming filler comprises boron nitride and / or aluminum nitride. According to the present invention, the long carbon chain polyamide resin composition has advantages of good ablation resistance, good flame retardant property, good mechanical property, and easy extrusion processing.

According to the high-thermal-conductivity flame-retardant copper-clad laminate and the preparation method thereof, the thermal conductivity and the limit oxygen index of a copper-clad plate can be effectively improved, so that the high-thermal-conductivity flame-retardant property of the copper-clad plate is effectively improved; modified aluminum nitride and phosphoric acid modified aluminum nitride powder in the heat-conducting filler can keep good hydrolysis resistance in the ball milling process; polyvinyl butyral and polyethylene glycol are compounded as a binder, so that the modified aluminum nitride has good sphericity and surface smoothness, and the spherical aluminum nitride prepared by water-based spray granulation is suitable for being used as a heat-conducting filler of a thermal interface material; modified silicon dioxide in the heat-conducting filler adopts cerium-doped hollow mesoporous silicon dioxide nanospheres coated with polydopamine, and a corrosion inhibitor MBT (2-mercaptobenzothiazole) is loaded by the cerium-doped hollow mesoporous silicon dioxide nanospheres; controllable release of the corrosion inhibitor MBT and rare earth cerium ions is achieved, the process of corroding the cathode and the anode can be inhibited at the same time, and the corrosion resistance and the corrosion self-repairing performance of the copper-clad plate can be effectively improved.

The invention provides a ceramic heating plate and a processing method of the ceramic heating plate. The machining method of the ceramic heating plate comprises the steps that the ceramic heating plate formed through normal-temperature isostatic pressing is prepared, the upper surface of the ceramic heating plate is made of aluminum nitride, at least an electrostatic adsorption metal wire mesh electrode is embedded in the ceramic heating plate, the process temperature of normal-temperature isostatic pressing forming is lower than 25 DEG C, and the process air pressure of normal-temperature isostatic pressing forming is lower than 200 Mpa; the process temperature of the high-temperature and high-pressure sintering is higher than 1500 DEG C, the process air pressure of the high-temperature and high-pressure sintering is higher than 100 Mpa, and the high-temperature and high-pressure sintering is used for avoiding the use of a binder or a ceramic layer spraying process, so that the heating temperature is increased, the sparking phenomenon of an equipment corrosive agent under high electrostatic adsorption voltage is avoided, and the service life of the equipment corrosive agent is prolonged. The service life of equipment is prolonged; and the safety performance of the process is improved.

The invention discloses a preparation method of angular aluminum nitride large-particle powder, which comprises the following steps: weighing raw material aluminum powder, aluminum nitride powder and a sintering aid according to a ratio, uniformly mixing, carrying out compression molding, carrying out combustion synthesis on a raw material blank in a high-pressure nitrogen atmosphere to obtain aluminum nitride ceramic, and crushing and screening to obtain the angular aluminum nitride large-particle powder of 20-200 mu m. According to the invention, one-step synthesis and sintering of aluminum nitride are realized by utilizing combustion reaction heat release of aluminum powder and nitrogen, the method has the characteristics of simple process and low preparation cost, and the prepared angular aluminum nitride large-particle powder can be used as a high-thermal-conductivity filler for electronic packaging.

The invention provides silicon nitride and aluminum nitride powder and a preparation method, and relates to the technical field of ceramic powder. The preparation method of the silicon nitride and aluminum nitride powder comprises the following steps: mixing aluminum powder and aluminum nitride raw powder to obtain a first mixture; mixing silicon powder, silicon nitride raw powder and ammonium salt to obtain a second mixture; paving the first mixture and the second mixture in a material frame padded with a carbon felt, and separating the first mixture from the second mixture by using the carbon felt; the material frame is placed in a self-propagating reaction kettle, nitrogen is introduced after vacuumizing, and the first mixture is ignited so as to induce a combustion synthesis reaction of the second mixture; and after the combustion synthesis reaction, cooling to room temperature, releasing the pressure in the self-propagating reaction kettle, taking out a synthetic product, and grinding the synthetic product to obtain silicon nitride powder and aluminum nitride powder. The purity of the powder material can be improved.

The invention provides a nano composite tungsten-based alloy. The alloy comprises the following components in parts by weight: 84.0 to 87.0 parts of W powder, 7.0 to 9.0 parts of N powder, 3.0 to 5.0 parts of Fe powder, 0.2 to 0.5 part of Co powder, 1.5 to 2.5 parts of Mo powder, 0.8 to 1.0 part of Zr powder, 0.5 to 0.8 part of Cr powder, 0.3 to 0.5 part of Mn powder, 0.4 to 0.5 part of B powder, 0.2 to 0.4 part of Ta powder, 0.1 to 0.3 part of Hf powder, 0.1 to 0.2 part of V powder, 0.1 to 0.3 part of T powder, 0.1 to 0.2 part of silicon carbide powder, 0.1 to 0.2 part of aluminum nitride powder, 0.3 to 0.5 part of yttrium oxide powder and 0.1 to 0.2 part of lanthanum oxide powder. The yield strength of the nano-composite tungsten-based alloy can reach 1270-1520 MPa, the tensile strength of the nano-composite tungsten-based alloy is 1430-1680 MPa, the ductility of the nano-composite tungsten-based alloy is 6-12%, and the impact toughness of the nano-composite tungsten-based alloy is 130-220 J / cm < 2 >.

The invention discloses an insulating heat-conducting glass fiber reinforced polyphenylene sulfide composite material and a preparation method thereof. The composite material comprises the following raw material components: 30-50 parts by mass of polyphenylene sulfide, 10-20 parts by mass of glass fiber, 30-50 parts by mass of a heat-conducting filler, 5-10 parts by mass of a compatilizer and 0.3-1 part by mass of a coupling agent, and the heat-conducting filler is selected from one or more of graphite, silicon carbide, aluminum oxide, magnesium oxide, aluminum nitride and hexagonal boron nitride; the compatilizer is selected from a glycidyl methacrylate graft polymer. The polyphenylene sulfide composite material prepared by the preparation method disclosed by the invention has high insulativity, high thermal conductivity and good mechanical properties.

The invention relates to the field of semiconductor device preparation, and provides a method for preparing a resistive layer of a variable resistance type memory based on laser pulse, which comprises the following steps: depositing a buffer layer on a bottom electrode layer of a pre-prepared variable resistance type memory, the material of the buffer layer comprising any one or more of tungsten, tantalum, nitrogen and boron; depositing a seed layer on the buffer layer; a target material is shot based on laser pulse shock, the target material is deposited on the seed layer to form a resistive layer, and the target material comprises any one or more of scandium, titanium, strontium, yttrium, lanthanum and barium and aluminum nitride. The method and the device are used for solving the defect of low read-write speed of the variable resistance type memory in the related technology, and the read-write speed of the variable resistance type memory can be improved based on preparation of the resistive layer by using aluminum nitride.

The invention relates to the technical field of precise cleaning and regeneration, and discloses an aluminum nitride crucible cleaning and regeneration process for a MicroOLED evaporation source, which comprises the steps of organic soaking, primary pure water soaking, physical film removal, water washing, primary drying, high-temperature baking, acid pickling, secondary pure water soaking, ultrasonic cleaning, secondary drying, detection, drying, cooling and vacuum packaging. According to the cleaning and regeneration technology for the aluminum nitride crucible for the MicroOLED evaporation source, multiple cleaning modes are combined, organic matter on the surface and in the aluminum nitride crucible can be effectively dissolved, compared with traditional soaking with a single organic solvent, the removal effect on stubborn stains is better, organic residues and permeation residues are avoided, and the service life of the aluminum nitride crucible is prolonged. The crucible can be safely mixed for use in subsequent use through the thorough cleaning process, cross contamination is effectively avoided, product flaws caused by incomplete cleaning of the crucible are reduced, the product yield is further improved, the high product yield means lower production cost and higher market competitiveness, and remarkable economic benefits are brought to enterprises.

The invention relates to a preparation method of an environment-friendly flame-retardant aluminum nitride silica gel composite film in the field of new materials, which comprises the following steps: selecting a silane coupling agent to carry out surface modification treatment on spherical aluminum nitride according to surface energy distribution characteristics, and introducing hydrophilic groups on the surface of the spherical aluminum nitride through chemical grafting reaction; a hydrophilic group is grafted on the surface of spherical aluminum nitride by adopting a silane modification method, and the hydrophilic group is hydroxyl or carboxyl, so that the surface activity and hydrophilicity are improved; mixing the silane-modified spherical aluminum nitride with a silica gel matrix to obtain dispersity data of the mixture, and judging whether the dispersity of the filler is uniform or not and the standard deviation of particle size distribution is less than 0.5 mu m; according to the dispersity data of the mixture, the filling amount of the spherical aluminum nitride is adjusted, and the heat conduction performance, thermal expansion performance and heat resistance data of the composite material under different filling amounts are obtained, so that the heat conduction coefficient of the composite material film is larger than 18 W / (m.K), the thermal expansion coefficient is smaller than 30 ppm / DEG C, and the heat resistance temperature is higher than 200 DEG C.

The problem to be solved by the present invention is to provide a novel technique that can remove a strained layer introduced into an aluminum nitride substrate. In order to solve this problem, the present aluminum nitride substrate manufacturing method involves a strained layer removal step for removing a strained layer in an aluminum nitride substrate by heat treatment of the aluminum nitride substrate in a nitrogen atmosphere. In this way, the present invention can remove a strained layer that has been introduced into an aluminum nitride substrate.

The invention relates to the technical field of green building materials, in particular to phase-change energy-storage thermal insulation mortar and a preparation method of the phase-change energy-storage thermal insulation mortar. 25 to 40 parts of methyl palmitate; 120 to 180 parts of hydrophobic perlite; 8 to 15 parts of expanded graphite; 3-6 parts of phosphorus sheet-shaped aluminum nitride; 180 to 250 parts of sulphoaluminate cement; 60 to 100 parts of volcanic rock micro powder; 0.3 to 0.8 part of hydroxypropyl methyl cellulose; 0.6 to 1.2 parts of a polycarboxylic acid water reducing agent; 2 to 4 parts of nano aluminum oxide; 0.8 to 1.5 parts of propyl gallate; and 1-2 parts of zinc borate. Through the proportion design of the antioxidant flame-retardant microcapsules and the lightweight composite aggregate, the problems of poor thermal conductivity and insufficient durability of a traditional phase change material are solved. Through phase change material loading, interface modification and multi-component cooperative regulation, the thermal insulation performance, energy storage efficiency and structural stability are remarkably improved, and the material is suitable for the fields of building energy saving, intelligent temperature control and the like.

The invention discloses a structure for adjusting the temperature gradient of an aluminum nitride crystal growth crucible through a physical vapor transport method, and belongs to the technical field of crystal growth equipment.The structure comprises an equipment cavity, a reflecting plate and a reflecting plate lifting device, a heat preservation structure is arranged in the equipment cavity, and a heater is arranged in the heat preservation structure; the reflecting plate lifting device comprises a lifting shaft connected with the reflecting plate, and the lifting shaft is arranged at the top of the equipment cavity, is symmetrical with the middle axis of the equipment cavity and is used for controlling the position of the reflecting plate, so that the lifting rate of the reflecting plate is 100-100000 [mu] m / h and is adjustable; and the reflecting plate is located in the heat preservation structure of the equipment cavity, is a tungsten metal round cake with the surface being patterned and is assembled at the position 10-50 mm above the heater, the radial / longitudinal temperature gradient of the top of the crucible can be adjusted, and when the crucible is used for growth of aluminum nitride crystals, on one hand, the thermal stress of the aluminum nitride crystals can be effectively inhibited; on the other hand, the growth rate of the aluminum nitride crystal can be regulated and controlled in real time, and finally the high-quality large-size aluminum nitride crystal is obtained.

The invention belongs to the technical field of aluminum nitride ceramic manufacturing, and particularly discloses black high-thermal-conductivity aluminum nitride ceramic and a preparation method thereof. The black aluminum nitride ceramic with high thermal conductivity is prepared by uniformly mixing and sintering aluminum nitride powder, a sintering aid and a coloring aid in a mass ratio of (90-98): (1-5): (1-5), and has the reflectivity of not more than 14% and the thermal conductivity of more than 180W / m.k. According to the preparation method, on the basis that the coloring auxiliary provides black modification for aluminum nitride, through accurate control over the oxygen content in a rubber discharging sheet obtained through rubber discharging, the multi-stage temperature end point in the sintering process and different atmospheres in the rubber discharging and sintering processes, the adverse effect of the coloring auxiliary on the improvement of the heat conductivity is hindered, and the thermal conductivity is improved. And the obtained aluminum nitride ceramic is ensured to have both black and high thermal conductivity. The raw materials required by the preparation method are conventional and easy to obtain, the process is simple, the cost is low, and the preparation method is convenient to popularize in the fields with high heat conduction and special requirements on light.

Dipole engineering techniques are disclosed herein that may be implemented when fabricating gate stacks, such as a gate stack of a transistor. An exemplary method for forming a gate stack of a transistor includes forming a high-k dielectric layer, forming a p-dipole dopant source layer over the high-k dielectric layer, performing a thermal drive-in process that drives aluminum from the p-dipole dopant source layer into the high-k dielectric layer, and after removing the p-dipole dopant source layer, forming at least one electrically conductive gate layer over the high-k dielectric layer. The p-dipole dopant source layer includes an aluminum layer. The p-dipole dopant source layer may further include an aluminum oxide layer and / or an aluminum nitride layer.

[Problem] To improve the partial discharge resistance of an insulating substrate for an electronic circuit that uses an aluminum nitride sintered substrate. [Solution] Provided is an aluminum nitride sintered substrate containing zirconium-containing particles therein, wherein the aluminum nitride sintered substrate has a composition in which the Zr / Al molar ratio is 0.0017-0.0665, and the region from the end surface in the thickness direction to at least a depth of 10.0 μm is a zirconium-deficient surface layer in which the number density of the zirconium-containing particles in a cross section parallel to the thickness direction is 6.0 / 540μm2 or less.