1318 results about "Aluminium nitride" patented technology

The invention discloses a high-strength and high-toughness aluminum nitride ceramic and a preparation method thereof, and relates to the technical field of ceramics, a sol-gel method is adopted to coat the surface of aluminum nitride with a stable shell layer to form a core-shell structure, meanwhile, the low lattice mismatch rate of a core-shell interface is utilized to reduce thermal resistance, and toughness and thermal conductivity are both considered; according to the external magnetic field tape casting method, the magnetic dipole moment orientation principle is utilized, an external magnetic field is applied in the tape casting stage, the in-plane mechanical property is improved, and the fracture toughness is improved through the magnetism of aluminum nitride whiskers; a reinforcement is introduced to improve the mechanical property and corrosion resistance of the aluminum nitride ceramic material, multi-granularity powder is compounded, large-particle aluminum nitride powder is used as a sintering and heat-conducting framework material, and high activity provided by submicron particles is utilized to promote sintering, so that the sintering temperature of aluminum nitride can be remarkably reduced, and the performance is greatly improved; and the aluminum nitride substrate expands more application fields on a future packaging circuit.

The invention relates to the technical field of porcelain, in particular to porous antioxidant composite porcelain and a preparation method thereof, and the preparation method comprises the following steps: weighing the following raw materials in parts by weight: 35-40 parts of clay, 10-15 parts of aluminum oxide, 6-10 parts of an aluminum nitride-doped modified homogenizing agent, 5-9 parts of kaolin and 5-8 parts of a sodium silicate blender. According to the porous anti-oxidation composite porcelain, clay is adopted as a matrix, aluminum oxide and kaolin are added to be matched with an aluminum nitride modified homogenizing agent and a sodium silicate blender, the raw materials are blended and synergized, compression molding is performed, and finally homogenizing sintering is performed, so that the porous anti-oxidation composite porcelain is obtained. The porous performance, the high-temperature oxidation resistance and the mechanical bending strength performance of the obtained composite porcelain are harmoniously improved, and meanwhile, the stability effect of the product is remarkable under different degrees of corrosion conditions.

An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufacturing an AlN substrate, including a crystal growth step S30 of forming an AlN layer 20 on a SiC underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming an AlN layer including the through hole formation step S20 of forming the through holes 11 in the SiC underlying substrate 10 before forming the AlN layer 20 on the SiC underlying substrate 10.

The invention discloses a preparation method of flaky aluminum nitride ceramic powder and a product thereof. The preparation method comprises the following steps: by taking deionized water as a dispersion medium, uniformly mixing Al2O3 powder, carbon black and Na3AlF6 through ball milling, and drying to obtain a precursor; and in a flowing nitrogen atmosphere, the precursor is subjected to a carbon thermal reduction reaction and a nitridation reaction to obtain the micron-sized flaky aluminum nitride ceramic powder. According to the method, a flaky template does not need to be prepared in advance, flaky AlN can be directly generated, and the technical defect that an existing process depends on precursor morphology is overcome.

According to the high-thermal-conductivity flame-retardant copper-clad laminate and the preparation method thereof, the thermal conductivity and the limit oxygen index of a copper-clad plate can be effectively improved, so that the high-thermal-conductivity flame-retardant property of the copper-clad plate is effectively improved; modified aluminum nitride and phosphoric acid modified aluminum nitride powder in the heat-conducting filler can keep good hydrolysis resistance in the ball milling process; polyvinyl butyral and polyethylene glycol are compounded as a binder, so that the modified aluminum nitride has good sphericity and surface smoothness, and the spherical aluminum nitride prepared by water-based spray granulation is suitable for being used as a heat-conducting filler of a thermal interface material; modified silicon dioxide in the heat-conducting filler adopts cerium-doped hollow mesoporous silicon dioxide nanospheres coated with polydopamine, and a corrosion inhibitor MBT (2-mercaptobenzothiazole) is loaded by the cerium-doped hollow mesoporous silicon dioxide nanospheres; controllable release of the corrosion inhibitor MBT and rare earth cerium ions is achieved, the process of corroding the cathode and the anode can be inhibited at the same time, and the corrosion resistance and the corrosion self-repairing performance of the copper-clad plate can be effectively improved.

The invention provides silicon nitride and aluminum nitride powder and a preparation method, and relates to the technical field of ceramic powder. The preparation method of the silicon nitride and aluminum nitride powder comprises the following steps: mixing aluminum powder and aluminum nitride raw powder to obtain a first mixture; mixing silicon powder, silicon nitride raw powder and ammonium salt to obtain a second mixture; paving the first mixture and the second mixture in a material frame padded with a carbon felt, and separating the first mixture from the second mixture by using the carbon felt; the material frame is placed in a self-propagating reaction kettle, nitrogen is introduced after vacuumizing, and the first mixture is ignited so as to induce a combustion synthesis reaction of the second mixture; and after the combustion synthesis reaction, cooling to room temperature, releasing the pressure in the self-propagating reaction kettle, taking out a synthetic product, and grinding the synthetic product to obtain silicon nitride powder and aluminum nitride powder. The purity of the powder material can be improved.

The invention discloses an insulating heat-conducting glass fiber reinforced polyphenylene sulfide composite material and a preparation method thereof. The composite material comprises the following raw material components: 30-50 parts by mass of polyphenylene sulfide, 10-20 parts by mass of glass fiber, 30-50 parts by mass of a heat-conducting filler, 5-10 parts by mass of a compatilizer and 0.3-1 part by mass of a coupling agent, and the heat-conducting filler is selected from one or more of graphite, silicon carbide, aluminum oxide, magnesium oxide, aluminum nitride and hexagonal boron nitride; the compatilizer is selected from a glycidyl methacrylate graft polymer. The polyphenylene sulfide composite material prepared by the preparation method disclosed by the invention has high insulativity, high thermal conductivity and good mechanical properties.

The invention relates to the technical field of precise cleaning and regeneration, and discloses an aluminum nitride crucible cleaning and regeneration process for a MicroOLED evaporation source, which comprises the steps of organic soaking, primary pure water soaking, physical film removal, water washing, primary drying, high-temperature baking, acid pickling, secondary pure water soaking, ultrasonic cleaning, secondary drying, detection, drying, cooling and vacuum packaging. According to the cleaning and regeneration technology for the aluminum nitride crucible for the MicroOLED evaporation source, multiple cleaning modes are combined, organic matter on the surface and in the aluminum nitride crucible can be effectively dissolved, compared with traditional soaking with a single organic solvent, the removal effect on stubborn stains is better, organic residues and permeation residues are avoided, and the service life of the aluminum nitride crucible is prolonged. The crucible can be safely mixed for use in subsequent use through the thorough cleaning process, cross contamination is effectively avoided, product flaws caused by incomplete cleaning of the crucible are reduced, the product yield is further improved, the high product yield means lower production cost and higher market competitiveness, and remarkable economic benefits are brought to enterprises.

The invention relates to the technical field of green building materials, in particular to phase-change energy-storage thermal insulation mortar and a preparation method of the phase-change energy-storage thermal insulation mortar. 25 to 40 parts of methyl palmitate; 120 to 180 parts of hydrophobic perlite; 8 to 15 parts of expanded graphite; 3-6 parts of phosphorus sheet-shaped aluminum nitride; 180 to 250 parts of sulphoaluminate cement; 60 to 100 parts of volcanic rock micro powder; 0.3 to 0.8 part of hydroxypropyl methyl cellulose; 0.6 to 1.2 parts of a polycarboxylic acid water reducing agent; 2 to 4 parts of nano aluminum oxide; 0.8 to 1.5 parts of propyl gallate; and 1-2 parts of zinc borate. Through the proportion design of the antioxidant flame-retardant microcapsules and the lightweight composite aggregate, the problems of poor thermal conductivity and insufficient durability of a traditional phase change material are solved. Through phase change material loading, interface modification and multi-component cooperative regulation, the thermal insulation performance, energy storage efficiency and structural stability are remarkably improved, and the material is suitable for the fields of building energy saving, intelligent temperature control and the like.

The invention discloses a structure for adjusting the temperature gradient of an aluminum nitride crystal growth crucible through a physical vapor transport method, and belongs to the technical field of crystal growth equipment.The structure comprises an equipment cavity, a reflecting plate and a reflecting plate lifting device, a heat preservation structure is arranged in the equipment cavity, and a heater is arranged in the heat preservation structure; the reflecting plate lifting device comprises a lifting shaft connected with the reflecting plate, and the lifting shaft is arranged at the top of the equipment cavity, is symmetrical with the middle axis of the equipment cavity and is used for controlling the position of the reflecting plate, so that the lifting rate of the reflecting plate is 100-100000 [mu] m / h and is adjustable; and the reflecting plate is located in the heat preservation structure of the equipment cavity, is a tungsten metal round cake with the surface being patterned and is assembled at the position 10-50 mm above the heater, the radial / longitudinal temperature gradient of the top of the crucible can be adjusted, and when the crucible is used for growth of aluminum nitride crystals, on one hand, the thermal stress of the aluminum nitride crystals can be effectively inhibited; on the other hand, the growth rate of the aluminum nitride crystal can be regulated and controlled in real time, and finally the high-quality large-size aluminum nitride crystal is obtained.

Dipole engineering techniques are disclosed herein that may be implemented when fabricating gate stacks, such as a gate stack of a transistor. An exemplary method for forming a gate stack of a transistor includes forming a high-k dielectric layer, forming a p-dipole dopant source layer over the high-k dielectric layer, performing a thermal drive-in process that drives aluminum from the p-dipole dopant source layer into the high-k dielectric layer, and after removing the p-dipole dopant source layer, forming at least one electrically conductive gate layer over the high-k dielectric layer. The p-dipole dopant source layer includes an aluminum layer. The p-dipole dopant source layer may further include an aluminum oxide layer and / or an aluminum nitride layer.

[Problem] To improve the partial discharge resistance of an insulating substrate for an electronic circuit that uses an aluminum nitride sintered substrate. [Solution] Provided is an aluminum nitride sintered substrate containing zirconium-containing particles therein, wherein the aluminum nitride sintered substrate has a composition in which the Zr / Al molar ratio is 0.0017-0.0665, and the region from the end surface in the thickness direction to at least a depth of 10.0 μm is a zirconium-deficient surface layer in which the number density of the zirconium-containing particles in a cross section parallel to the thickness direction is 6.0 / 540μm2 or less.

The invention belongs to the field of heat conduction materials, and particularly relates to gradient interface modified aluminum oxide-aluminum nitride bi-component heat conduction filler and a preparation method thereof, and the gradient interface modified aluminum oxide-aluminum nitride bi-component heat conduction filler comprises spherical aluminum oxide, flaky aluminum nitride and double gradient modified layers coating the surfaces of the spherical aluminum oxide and the flaky aluminum nitride; the D50 of the spherical aluminum oxide is 2-5 microns, and the sphericity is greater than or equal to 0.85; the sheet-shaped aluminum nitride is in a hexagonal sheet shape, the average particle size is 8-12 microns, the thickness is 200-500 nanometers, and the radius-thickness ratio is 20-50; the mass ratio of the spherical aluminum oxide to the flaky aluminum nitride is (40-70): (30-60); the double-layer gradient modification layer comprises an inner-layer hydrophobic silane layer and an outer-layer reactive silane layer, the inner-layer hydrophobic silane layer is formed by grafting alkyl trialkoxy silane with the carbon chain length of 8-16, the outer-layer reactive silane layer is formed by grafting a silane coupling agent containing an epoxy group or an amino group, and morphological complementary optimization of a filler network is achieved.

The invention discloses a radiation-resistant protective cable for a nuclear power station and a preparation method thereof, and belongs to the technical field of cables, the radiation-resistant protective cable for the nuclear power station comprises a cable body and a sheath layer, and the sheath layer comprises the following components in parts by mass: 100 parts of polypropylene resin, 20-40 parts of ethylene propylene diene monomer and 5-12 parts of modified multi-walled carbon nanotubes. 8-15 parts of a heat conduction enhancer, 2-6 parts of an antioxidant, 1-3 parts of a heat stabilizer and 4-8 parts of a plasticizer; the heat conduction reinforcing agent is prepared by carrying out surface modification on composite powder of aluminum nitride and boron nitride through a silane coupling agent. Through the synergistic effect of the modified multi-walled carbon nanotubes and the surface modified heat-conducting enhancer, the heat-conducting property, radiation resistance and heat stability of the cable are remarkably improved on the premise of keeping excellent electrical insulation property.

The invention relates to the technical field of semiconductor materials, in particular to a silicon carbide epitaxial gallium oxide thin film and a preparation method thereof.The preparation method includes the steps that a silicon dioxide mask layer, an aluminum nitride low-temperature buffer layer, an aluminum nitride high-temperature buffer layer and a gallium oxide thin film layer are sequentially grown on a silicon carbide substrate slice through a metal organic chemical vapor deposition method; wherein the silicon dioxide mask layer contains a small amount of aluminum nitride, so that a heat source can be quickly transferred, and the heat conductivity of the gallium oxide thin film can be effectively improved; according to the method, plasma etching is carried out on the silicon dioxide mask layer with silicon carbide as the substrate twice, the flatness of the aluminum nitride buffer layer surface is improved, dislocation and step type defects in the gallium oxide growth process are further effectively inhibited, and the growth quality of the gallium oxide film is improved. Through the heteroepitaxy technology, the production cost of the gallium oxide thin film can be reduced, meanwhile, the gallium oxide thin film has high heat conductivity, and compared with the prior art, the gallium oxide thin film has wide application prospects.

The invention provides a method for synthesizing aluminum nitride fibers by preheating combustion, which comprises the following steps: preheating aluminum powder and aluminum nitride serving as raw materials in a low-pressure nitrogen environment, and then inducing a combustion synthesis reaction to prepare the aluminum nitride fibers with the average diameter of 0.3-0.8 mu m and the average length of 400-800 mu m. The preparation method has the characteristics of simple process, low preparation cost and the like, and the prepared aluminum nitride fiber can be used as a high-thermal-conductivity filler for electronic packaging.

The invention discloses high-toughness and high-thermal-conductivity aluminum nitride ceramic and a production process, and relates to the related field of aluminum nitride ceramic. Hexagonal boron nitride and Ti3SiC2 composite particles with the surfaces coated with titanium nitride are introduced into aluminum nitride ceramic, a cerium oxide sintering aid and a reasonable organic adding system are supplemented, synergistic improvement of thermal conductivity and toughness is achieved, Ti3SiC2 is subjected to TiN nanometer coating, interface stability and oxidation resistance are enhanced, combination of Ti3SiC2 and a matrix is improved, and the thermal conductivity and toughness of the aluminum nitride ceramic are improved. The fracture toughness and the mechanical strength of the ceramic are obviously improved; meanwhile, aluminum nitride and hexagonal boron nitride construct an efficient thermal conductivity network, so that the material keeps excellent thermal conductivity, the overall scheme is reasonable in structural design and scientific in component matching, and the obtained ceramic is high in density, high in thermal conductivity, excellent in mechanical property and high in thermal shock resistance.

The invention provides a preparation method of a thermite, which comprises the following steps: taking CuN (CN) 2 and aluminum powder as raw materials, adding an organic solvent, mixing, and carrying out vacuum drying to obtain the thermite, the mass ratio of the CuN (CN) 2 to the aluminum powder is (1: 1)-(1: 4). According to the method for preparing the thermite through CuN (CN) 2, a new thought for applying other oxides to an energetic material of the thermite is provided, the thermite can provide the heat of 1528.9 J / g and the gas production pressure of 50 KPa, and it is detected that a high-temperature-resistant material aluminum nitride is generated in a product obtained after combustion.

An aluminum nitride ceramic welding assembly comprises a first aluminum nitride ceramic piece, a second aluminum nitride ceramic piece and a third aluminum nitride ceramic piece, a second pin hole corresponding to the first pin hole is formed in the welding surface of the second aluminum nitride ceramic piece; two ends of the aluminum nitride ceramic positioning pin are respectively inserted into the first pin hole and the second pin hole; and the slurry layer containing rare earth oxide is arranged on the welding surface of the first aluminum nitride ceramic piece, and the distribution density of the rare earth oxide is gradually reduced from the position close to the first aluminum nitride ceramic piece to the position far away from the first aluminum nitride ceramic piece. High-temperature displacement errors are eliminated by means of cooperative positioning of pin holes in the first aluminum nitride ceramic piece and the second aluminum nitride ceramic piece and aluminum nitride ceramic positioning pins; and meanwhile, generation of brittle phases is inhibited by utilizing a form that the distribution density of rare earth oxides in the slurry layer is gradually reduced from near to far, so that the effects of a high-precision welding interface and joint strength enhancement are obtained, and the reliability and the service life of the aluminum nitride ceramic component are improved.

The invention provides a method for growing an aluminum nitride thick film through a hydride vapor phase epitaxy method, and belongs to the technical field of third-generation semiconductor material preparation. According to the method, an aluminum source area in HVPE equipment is improved, supply of a multi-partition independent control aluminum source is provided, a periodic etching control strategy of an HCl gas channel is introduced, and a nested collaborative epitaxy method of outer-layer aluminum source rotation and inner-layer growth cycle embedded etching is formed. The problems of aluminum source degradation, nozzle blockage and stress accumulation in existing HVPE growth can be effectively solved, and long-time continuous operation of epitaxial AlN of the HVPE equipment is achieved; interruption and replacement operations caused by degradation of the aluminum source in long-time growth are avoided; nozzle area deposition is effectively removed, and the flow field stability is maintained; the stress is dynamically released, the crack occurrence rate is reduced, the film layer integrity is improved, and the method is suitable for HVPE equipment transformation and upgrading.

The invention relates to the field of aluminum nitride ceramic substrates, provides a preparation method of a high-thermal conductivity aluminum nitride substrate, and solves the defects of low thermal conductivity and insufficient mechanical strength of an aluminum nitride substrate obtained by adopting a preparation method in the prior art. Comprising the following preparation processes: (1) preparing raw materials and auxiliary materials; (2) mixing the raw materials and the auxiliary materials; (3) tape casting; (4) aging; (5) pre-flattening treatment; (6) sintering; and (7) post-treatment.

The invention provides a preparation method and application of ceramic slurry for high-temperature bonding of aluminum nitride ceramics, and relates to the technical field of high-temperature ceramic materials.The preparation method comprises the following steps that firstly, an organic carrier is prepared, a polymer binder, an organic solvent, a plasticizer and a dispersing agent are weighed according to the weight ratio and stirred at the temperature of 60-70 DEG C till complete dissolution and clarification are achieved for use; 2, an inorganic functional phase is prepared, aluminum nitride powder, yttrium oxide powder and alkaline earth metal oxide powder are weighed according to the weight proportion and placed in a ball milling tank to be evenly mixed, the obtained ceramic slurry serves as a bonding layer, the tolerable temperature can reach 1000 DEG C or above and is far higher than that of metal brazing filler metal, and the ceramic slurry is suitable for severe environments such as aerospace and high-temperature sensors. The main components of the bonding layer are consistent with the base material, and the thermal expansion coefficient is highly matched, so that the thermal stress can be greatly relieved, and the failure of the device caused by thermal fatigue in the temperature cycle is avoided.

The invention relates to the technical field of refractory materials, in particular to a method for producing magnesia carbon bricks from low-carbon reduced magnesia. The method comprises the following steps: respectively weighing 80-90 parts by weight of magnesia, 3-5 parts by weight of a function enhancer, 1-3 parts by weight of aluminum powder, 0.3-1 part by weight of aluminum nitride, 2-3 parts by weight of carbon black, 3-5 parts by weight of crystalline flake graphite and 3-5 parts by weight of phenolic resin for later use; mixing the magnesite except the fine magnesite with phenolic resin, uniformly mixing, adding the rest raw materials, uniformly stirring at a low speed, adding the fine magnesite, and uniformly stirring at a high speed to obtain mixed slurry; and injecting the mixed slurry into a prepared mold, and sequentially carrying out compression molding and heat treatment to obtain the magnesia carbon brick. The magnesia carbon brick produced by the invention not only has excellent mechanical properties, but also has excellent thermal shock resistance stability and oxidation resistance; the quality of the produced magnesia carbon brick is effectively guaranteed, and meanwhile the service life of the magnesia carbon brick is prolonged to a certain degree.

The present application relates to high speed, high efficiency SiC power modules. A power converter module includes an active metal brazing (AMB) substrate, a power converter circuit, and an enclosure. The AMB substrate includes an aluminum nitride base layer, a first conductive layer on a first surface of the aluminum nitride base layer, and a second conductive layer on a second surface of the aluminum nitride base layer opposite the first surface. The power converter circuit includes a plurality of silicon carbide switching components coupled to each other via the first conductive layer. The enclosure is disposed over the power converter circuit and the AMB substrate. By using an AMB substrate with an aluminum nitride base layer, thermal dissipation of the power converter module can be significantly improved while maintaining structural integrity of the power converter module.

Disclosed herein are a microelectromechanical system (MEMS) devices comprising a first electrode layer, an aluminum nitride based piezoelectric layer, and a second electrode layer. The aluminum nitride based piezoelectric layer comprises a piezoelectric material of formula AlxScyYbzN, wherein x+y+z=1. Also disclosed are acoustic components comprising the piezoelectric material.

The invention relates to a battery safety detection device integrating electromagnetic excitation and receiving, which is suitable for battery safety detection under the scenes of lithium battery research and development, quality inspection, recovery and the like. The detection device mainly comprises a temperature control module, an active magnetic excitation module, a battery clamping and heat measuring module and a multi-channel measuring unit. The modular uniform heat system is composed of a copper base body and a detachable adaptive layer, and the detachable adaptive layer is rapidly replaced through a magnetic attraction fixing point and supports full-adaptive testing of cylindrical, square and soft package batteries. The active magnetic excitation module generates an axial uniform magnetic field through a water-cooled electromagnetic coil, and the temperature drift error is small in combination with the anti-interference design of an aluminum nitride ceramic fiber layer; the synchronization control unit supports timestamp synchronization, and the association degree of different detection data is high. The lithium battery safety detection device effectively solves the problem that an existing lithium battery safety detection device cannot perform nondestructive defect detection while detecting charging and discharging heat production, and the test efficiency and the anti-interference capability are improved.

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The present invention discloses a method for the combined treatment of secondary aluminum ash by ball milling, sorting, low-temperature roasting and water washing and leaching, which belongs to the technical field of aluminum ash treatment. This technology uses screening to perform step-by-step screening on the secondary aluminum ash after ball milling to obtain secondary aluminum ash with three particle sizes: coarse, medium and fine. The medium-sized secondary aluminum ash is treated by low-temperature roasting, and the fine-sized secondary aluminum ash is treated by low-temperature roasting with a doped electrolytic aluminum electrolyte. After treatment, the medium-sized and fine-sized secondary aluminum ashes are washed and leached together with the coarse-sized secondary aluminum ashes to obtain harmless secondary aluminum ash and inorganic salts. The present invention fundamentally solves the safety risks brought by active substances such as aluminum nitride, aluminum carbide and inorganic salts in the secondary aluminum ash, and at the same time realizes the resource utilization of the secondary aluminum ash.

The present invention provides a method and device for passivation repair of damage from half-cell cutting in a solar cell. The method comprises: (1) providing a plate-type PEALD deposition device; (2) placing sliced solar cells in a carrier and enabling sliced sections to be completely exposed, and preheating same; (3) introducing TMA, water vapor, and nitrogen, and depositing an aluminum oxide thin film on the surfaces of the sliced sections; (4) carrying out nitrogen purging, introducing TMA, ammonia gas, and nitrogen, and depositing an aluminum nitride thin film on the surface of the aluminum oxide thin film; and (5) carrying out annealing treatment, and breaking the vacuum for unloading. In the present invention, by sequentially depositing an aluminum oxide layer and an aluminum nitride layer on the surfaces of the sliced sections of the sliced solar cells, the damage at a cell laser half-cell cutting position is passivated and repaired, so that the efficiency of the repaired half-cut solar cells is increased by 0.1-0.3%.

The invention discloses a composite aluminum nitride aluminum-coated ceramic substrate packaging module and a preparation method thereof, a composite aluminum nitride aluminum-coated ceramic substrate is composed of pattern surface aluminum, aluminum nitride ceramic, intermediate layer aluminum, aluminum nitride ceramic and non-pattern surface aluminum, the thickness ratio of the pattern surface aluminum to the intermediate layer aluminum is 1 / 15-1 / 4, and the thickness ratio of the non-pattern surface aluminum to the intermediate layer aluminum is 1 / 15-1 / 4. The thickness ratio of the pattern surface aluminum to the non-pattern surface aluminum is 1 / 10-1 / 4, the thickness of the pattern surface aluminum is 0.1 mm-0. 8mm, and the thickness of the aluminum nitride ceramic is 0.6 mm-3mm; the non-graphic surface of the aluminum nitride aluminum-coated composite ceramic substrate is connected with a radiator, the graphic surface of the aluminum nitride aluminum-coated composite ceramic substrate is bonded with a diode through a solder, and the diode is electrically connected through a lead; the composite aluminum nitride aluminum-coated ceramic substrate is formed at a time, the aluminum surface keeps the characteristic of high-purity aluminum, the ceramic-aluminum thickness relation between multiple layers of the composite aluminum nitride aluminum-coated ceramic substrate is reasonably matched, and the toughness and rigidity of the whole material are improved; the ceramic substrate does not need to be bonded with a bottom plate through welding flux after one-time forming, interface thermal resistance is not newly added, and the whole module is high in heat dissipation.