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990 results about "Polymer adhesive" patented technology

Cement-based composite material for powder-bonding three-dimensional (3D) printing, and powder-bonding 3D printing method applying cement-based composite material

ActiveCN106800391AAppropriate hardening speedAppropriate water distribution effectAdditive manufacturing apparatusPolymer adhesivePhosphate
The invention provides a cement-based composite material for powder-bonding three-dimensional (3D) printing. The material is prepared from the following components in parts by weight: 1 part of cement, 0-5 parts of sand, 0-5 parts of a mineral admixture, 0-0.2 part of an expanding agent, 0-0.2 part of a toughening agent, 0-0.2 part of mineral pigment, 0.1-0.5 part of water, 0-0.25 part of polymer emulsion, 0.001-0.05 part of an additive and 0-0.03 part of fibers, wherein the cement is selected from one or a mixture of more in silicate cements, sulphoaluminate cement, high belite sulphoaluminate cement, aluminate cement, fluoroaluminate cement, aluminosilicate cement, phosphate cement or magnesium oxide cement; the additive is selected from one or a mixture of more in a water reducing agent, an early strength agent or a coagulating regulating agent. After being contacted with water, the cement-based composite material can be hardened, thus not needing a great deal of polymer adhesive; the cement-based composite material is rapid and controllable in hardening speed; the cement-based composite material is small in deformation in the hardening process, thus being suitable for a powder-bonding 3D printing technology. The invention also provides a method for carrying out powder-bonding 3D printing by using the cement-based composite material.
Owner:万玉君

Preparation method of nano Ni3S2 material with lamellar structure

The invention discloses a preparation method of a nano Ni3S2 material and belongs to the field of novel energy resources and electrochemistry. The preparation method of the nano Ni3S2 material is characterized by synthesizing the nano Ni3S2 material by taking a Ni net with a three-dimensional porous structure by virtue of a solvothermal method. A nano Ni3S2 active substance formed during the solvothermal process is directly loaded on an upper matrix of the Ni net, so that the active substance Ni3S2 is in relatively firm contact with a Ni net of a current collector; gaps of the porous Ni net can effectively buffer the volume change of the Ni3S2 in the processes of removing and embedding lithium, so that the cycle stability of the composite material can be improved; meanwhile, by virtue of a three-dimensional conductive network of the Ni net, the electronic conductivity of the composite material can be improved, so that the rate performance of the material is improved. The preparation method of the nano Ni3S2 material is simple, green, free from pollution, low in cost and suitable for industrial production. The Ni3S2 material prepared by adopting the method is small in particle size and uniform in particle distribution; according to an electrode prepared from the material, a polymer adhesive and a conductive agent do not need to be added in the electrode; the electrode has the high electrochemical performance and can be widely used in the fields of various portable electronic devices, electric automobiles, aeronautics and astronautics, and the like.
Owner:UNIV OF SCI & TECH BEIJING

Embedded silicon substrate fan-out type packaging structure and manufacturing method thereof

The invention discloses an embedded silicon substrate fan-out type packaging structure and a manufacturing method thereof. A silicon matrix is adopted to replace molding material to act as a fan-out matrix, and fine wiring can be manufactured by fully utilizing the advantages of the silicon matrix. Holes, grooves and other structures can be accurately etched by utilizing a mature silicon etching technology. Chips are embedded in the grooves on the silicon matrix, the gaps between the chips and the side walls of the grooves are filled by polymer glue and partial welded balls are welded at the surface of the silicon matrix in a fan-out way so that packaging reliability can be enhanced, the technology is simple and cost is low. The silicon matrix has great heat radiation and lower warping so that enhancement of packaging heat radiation is facilitated, adverse warping can be overcome and smaller wiring line width can be acquired, and thus the structure is suitable for high-density packaging. `Wafer plastic packaging and the de-bonding technology can be eliminated as for the aspect of technology so that technology difficulty can be reduced, and thus cost can be substantially reduced and yield rate can be enhanced.
Owner:HUATIAN TECH KUNSHAN ELECTRONICS
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