5688results about "Microstructural device manufacture" patented technology

The invention relates to the technical field of sensors, and provides a six-dimensional force sensor based on a planar semiconductor process and a preparation method thereof, and the six-dimensional force sensor comprises a central bearing platform, a housing, an elastic beam and a buffer beam. One end of the elastic beam is connected to the center bearing table, the other end of the elastic beam is connected to the buffer beam, the buffer beam and the elastic beam are orthogonally arranged, and the end, away from the elastic beam, of the buffer beam is connected to the shell. Wherein the surfaces of the elastic beam and the buffer beam are provided with six groups of strain gauges, and the six groups of strain gauges are respectively used for measuring forces in three directions and moments in three directions. According to the method, the multi-load-step-based least square method linear matrix decoupling is adopted, so that the inter-dimensional coupling error of the six-dimensional force sensor is reduced to below 2%. According to the invention, the six-dimensional force sensor is prepared by adopting a planar semiconductor process, the difficulties of side surface attachment and side wall lead binding of the strain gauges are avoided, and the six-dimensional force sensor has the advantages of simple process, low manufacturing cost and small crosstalk error.

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

The invention discloses an MEMS device architecture, which comprises a cap layer, a device layer and a substrate layer, the cap layer is bonded with the device layer, the bonded whole is bonded with the substrate layer, the cap layer is manufactured based on a first silicon substrate, the bottom of the cap layer is provided with a cavity structure, and the cap layer is internally provided with a high-deep groove structure. A silicon dioxide film is arranged on the groove wall of the high-deep groove structure, polycrystalline silicon is deposited and filled in the high-deep groove structure, and a silicon dioxide layer is arranged on the upper surface of the first silicon substrate; the device layer is manufactured based on an SOI wafer and comprises a first silicon structure layer composed of top layer silicon, a buried oxide layer and a second silicon structure layer composed of back substrate silicon. The substrate layer comprises a second silicon substrate, a bottom layer cavity is formed in the top face of the second silicon substrate, and exhaust holes are formed in the bottom face of the second silicon substrate. According to the method, deep groove etching, polycrystalline silicon groove filling and bonding technologies are combined, advanced materials such as the SOI wafer and the polyimide layer are utilized, and excellent signal isolation and flexibility of various MEMS IMU applications are achieved.

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

The invention discloses a fishbone-Tesla valve micro-mixing chip and a preparation method and application thereof.The micro-mixing chip comprises a chip body, a Tesla valve and at least two mixing inlets are formed, the Tesla valve comprises at least one mixing unit, the mixing inlets are communicated with the unit inlets of the mixing units on the outermost side, and the mixing units are communicated with the mixing inlets of the mixing units on the outermost side; at least one mixing unit in the Tesla valve is provided with at least one fishbone structure, and the sharp corner of the fishbone structure faces the mixing inlet. At least one fishbone structure is arranged in the Tesla valve, the sharp corner of the fishbone structure faces the mixing inlet, when fluid in the Tesla valve flows through the fishbone structure, the fluid in the Tesla valve dispersedly flows towards the two sides through the fishbone structure, transverse flowing of the fluid is promoted, and therefore the mixing efficiency of the micro mixing chip is improved.

Microelectromechanical component (100) for motion measurement, comprising: a fortified section (118); a single, central anchor (106) coupled to the attached section (118) with four sides; a first non-straight suspension element (108) coupled to the anchor (106) on one side of the anchor (106); a second non-straight suspension member (120) coupled to the anchor (106) on the same side of the anchor (106), wherein the second non-straight suspension member (120) has a shape and position that mirrors the first non-straight suspension member (108) on a plane (122) bisecting the anchor; and a test mass (104) which is planar, wherein the test mass (104) is suspended at least partially on the first non-straight suspension member (108) and the second non-straight suspension member (120) such that the test mass (104) is rotatable about the anchor (106) and displaceable in a plane which is parallel to the attached section (118), where the first and second non-straight suspension members (108, 120) are bending bearings, wherein the first non-straight suspension member (108) has a C-shape, wherein the C-shape includes an inner section (110) which is coupled to the anchor (106) and extends towards the plane (122) bisecting the anchor, a central section (114) which includes a nearby section and has a distant section, whereby the near section is coupled to the inner section (110), and the far section extends away from the anchor (106) along the plane (122) bisecting the anchor and is coupled to an outer section (112) extending away from the plane (122) bisecting the anchor.

The invention relates to the technical field of high polymer materials and preparation thereof, and discloses a wet anti-slip bionic friction pad on a glass surface, which is inspired by a micro-nano structure of toe pads of organisms such as tree frogs and long-horned grasshoppers with wet friction increasing characteristics, and a bulge array is added on the surface of a high-friction material, so that the friction coefficient of the friction pad is increased; the microstructure arrays can discharge a water film on the surface of the friction pad under the capillary action in a wet environment, and the effective contact area between solids is increased, so that the friction pad and a friction surface are always kept in a dry friction state, and stable friction force is ensured. The friction pad comprises a connecting layer, a supporting layer and a tail end protruding straight column array, a tail end contact layer is in a hexagonal straight column shape, the diameter of an inscribed circle of a hexagonal micro-column structure ranges from 5 micrometers to 5000 micrometers, column bodies are densely arranged in a hexagonal mode, the height of the column bodies ranges from 10 micrometers to 1500 micrometers, the tail ends of the column bodies are planes, the interval between every two column bodies ranges from 2 micrometers to 600 micrometers, and tight drainage grooves are formed.

The invention provides a flexible palladium film hydrogen sensor and a preparation method thereof, the flexible palladium film hydrogen sensor is sequentially provided with a flexible substrate, a hydrogen sensitive sensing layer and a contact connection layer from bottom to top, and the contact connection layer is connected with a resistance measurement unit; and the hydrogen-sensitive sensing layer is a palladium or palladium alloy film with a conical micro-nano structure. The palladium or palladium alloy thin film with the conical micro-nano structure provides a hydrogen sensor conical surface micro-nano structure with a high specific surface area for the flexible palladium thin film hydrogen sensor, and the process that hydrogen is adsorbed, dissolved and diffused into the palladium or palladium alloy thin film is accelerated, so that the response speed of the sensor is increased; according to the hydrogen sensor, the flexible substrate is adopted, so that the hydrogen sensor can be conveniently arranged in various narrow spaces, and the applicability of the hydrogen sensor in various scenes is improved.

The invention relates to the field of microelectronic manufacturing, and discloses a high-performance monocrystalline silicon nano wafer manufacturing process which comprises the following steps: preparing a monocrystalline silicon wafer, and obtaining a high-quality monocrystalline silicon wafer through fine cutting, chemical mechanical polishing and surface residual stress elimination treatment; multi-stage cleaning and surface treatment are carried out, and surface pollutants are removed through combination of molecular chromatography, electric field assisted ultrasonic cleaning and low-temperature plasma cleaning; and manufacturing a nano structure, and forming a complex nano structure by adopting multi-stage electron beam lithography, segmented reactive ion etching and self-adaptive deep etching regulation and control. The surface quality, the mechanical strength and the electrical property of the wafer are remarkably improved through the technologies of refined monocrystalline silicon wafer preparation, multi-stage cleaning, advanced nanostructure manufacturing, self-adaptive heat treatment and the like; and through surface functionalization and multi-layer high-precision packaging, the environmental tolerance and long-term reliability of the nanostructure are enhanced.

The invention provides a preparation method of an island and beam film structure micro differential pressure sensor with an IC (Integrated Circuit), which comprises the following steps: arranging an N-type buried layer, a P-type buried layer and an island film structure on an SOI (Silicon On Insulator) silicon wafer, then connecting the SOI silicon wafer with a double-parabolic silicon wafer, and arranging a medium isolation groove, an N-type buried layer connecting region, a P well, a P-type buried layer connecting region, a sensitive resistor, a P-type base region, an N-type base region, an N-type emitter region and a P-type emitter region on the SOI silicon wafer. According to the invention, the preparation of the complementary bipolar transistor double-buried layer is completed by combining a semiconductor manufacturing technology and an MEMS manufacturing technology under the condition of not using an epitaxial process; the process flow is integrally simplified, and the preparation efficiency is improved.

The invention provides a resonance type flow field sensor with an inertia force compensation structure. The resonance type flow field sensor comprises a substrate; the double-end fixed tuning fork is fixed in the middle of the base; the cilium supporting structure is suspended on the base and is positioned at one end of the double-end fixed tuning fork; the comb tooth capacitors are arranged on the substrate and located on the two sides of the double-end fixed tuning fork; the cilia is arranged on the cilia supporting structure; one end of the micro lever is connected with the cilium supporting structure, and the other end is connected with one end of the double-end fixed tuning fork; and the inertia force compensation structure is suspended on the base, is symmetrically arranged relative to the double-end fixed tuning fork, is connected with one end of the double-end fixed tuning fork, and is positioned between the micro lever and the double-end fixed tuning fork. According to the sensor, the change of an air flow field is captured through the cilia on the sensor, the resonant frequency is detected through the capacitor, the flow velocity of the flow field can be obtained, the inertia force compensation structure can compensate interference of inertia force on an output result, and the sensor can still output stable flow velocity of the flow field when being interfered by the inertia force.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

The present application relates to a micromechanical component (1) and a method for producing a micromechanical component (1). The proposed micromechanical component (1) comprises a layered structure and at least one piezoelectric element (10). The piezoelectric element (10) contains a first electrode (5) and second electrode (27) for generating and / or detecting deflections of a deflection element (16). The deflection element (16) is connected to a holder (17). The layered structure of the micromechanical component (1) comprises a silicon substrate (2), a conductive semiconductor layer (26), a piezoelectric layer (7) and a conductive layer film (12). The conductive semiconductor layer (26) forms the first electrode (5) and the conductive layer film (12) forms the second electrode (27) of the piezoelectric element, wherein the conductive semiconductor layer (26) at the same time forms a carrier layer (28) for the deflection element (16).

The invention belongs to the field of MEMS sensors, and particularly relates to a low-temperature-drift MEMS resonant pressure sensor sensitive chip and a preparation method thereof. Comprising a cap layer, a resonance layer, a pressure sensing layer and an isolation base which are sequentially bonded and connected from top to bottom, the cap layer is provided with an electrode through hole and a vacuum cavity groove, and a getter is sputtered in the vacuum cavity groove; two Si-SiO2 composite resonators and a plurality of lead wire discs are arranged on the resonance layer, and a metal electrode is arranged on each lead wire disc; the number of the metal electrodes is equal to that of the cap layer electrode through holes, and the metal electrodes are located under the electrode through holes; two groups of silicon islands are arranged on the front surface of the pressure sensing layer, and three rectangular sensitive films with the same size are arranged on the back surface; the isolation base is a glass table; according to the invention, the output sensitivity of the sensor is greatly improved, the chip processing complexity is reduced, and the introduction of additional stress and materials is reduced.

A MEMS sensor and a preparation method therefor. The method comprises: forming a first oxide layer on a substrate wafer, performing patterned etching on the first oxide layer, and performing deposition and doping on the first oxide layer that has undergone the patterned etching, so as to form a first polycrystalline silicon layer; performing patterned etching on the first polycrystalline silicon layer to form a wiring, and depositing a second oxide layer on the first polycrystalline silicon layer; upon performing patterned etching on the second oxide layer, performing deposition and doping to form a second polycrystalline silicon layer; performing patterned etching on the second polycrystalline silicon layer to form bonding anchor points and a capacitive plate having a lower height than the bonding anchor points; bonding a device wafer with the bonding anchor points, and performing patterned etching on the device wafer to generate a movable structure, so as to obtain a device layer; and bonding the side of the device wafer distant from the substrate wafer with a cover layer.

The invention belongs to the technical field of two-dimensional materials, and particularly relates to a preparation method of a corner heterojunction. According to the preparation method, when the two-dimensional material sheet is prepared, based on the characteristics of smooth surface and high viscosity of the hydrophilic polymer layer, a large-area two-dimensional material can be stripped from the silicon substrate with the hydrophilic polymer film layer, the stripping process is clean, and the two-dimensional material is not damaged; when the corner heterojunction is prepared, an intermediate two-dimensional material or an active interface does not contact any polymer in the whole transfer process by adjusting the shape and size of a transfer medium based on a Van der Waals force pickup transfer method, so that the pollution of a heterogeneous interface is greatly reduced; the efficient and fast preparation of the Van der Waals heterostructure without polymer residues and bubbles on the interface is realized.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

The invention relates to the field of manufacturing of sensitive elements and sensors in the electronic core industry, in particular to a piezoelectric MEMS acoustic device and a manufacturing method thereof. The device structurally comprises a substrate, an insulating layer, a silicon substrate, a multi-layer composite film structure and a protective layer from bottom to top in sequence, wherein the multi-layer composite film structure is formed by alternately growing electrode layers and piezoelectric layers, and the first layer and the last layer of the multi-layer composite film are the electrode layers; a bonding pad is arranged on the multi-layer composite film structure; the protective layer covers the upper surface of the device; a suspended back cavity structure is arranged between the substrate and the insulating layer; the silicon substrate, the multi-layer composite film structure and the protective layer are connected through an opening communicated with the back cavity; according to the device provided by the invention, the volume of the piezoelectric material is increased mainly by adding the piezoelectric layer, and the energy conversion efficiency of the structure is effectively improved, so that the sensitivity of the transducer is improved.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

The invention provides a method for aligning a bonding body wafer on a non-infrared exposure machine, which comprises the following steps of: providing the bonding body wafer which comprises a plurality of wafers in bonding connection, and forming alignment marks on the bonding surfaces of the wafers which are mutually bonded; manufacturing an alignment photomask, wherein the alignment photomask is provided with an alignment mark window pattern; forming an alignment mark window on the surface of the bonding body wafer by utilizing photoetching and etching processes through an alignment photomask, and exposing the alignment mark on the bonding surface through the alignment mark window; and carrying out photoetching alignment through the exposed alignment mark. According to the method, the alignment problem when the alignment mark on the non-infrared exposure machine is positioned in the bonding body wafer is solved. The invention further provides a preparation method of the semiconductor device, the alignment method is adopted for alignment after the front face and the back face of a bonding body wafer are thinned, then the pattern face of the device is processed, and possible pollution to the bonding face and possible damage to the pattern face are avoided.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

The invention discloses an embedded liquid metal microstructure electrode, a flexible pressure sensor array and a preparation method. The technical problems that an existing flexible pressure sensor array is low in sensitivity, large in crosstalk and the like are solved. Wherein the embedded liquid metal microstructure electrode comprises a first flexible substrate, a first liquid metal layer and a first packaging layer; the lower surface of the first flexible substrate is a plane, and a plurality of micro-cone structures arranged in an array are uniformly distributed on the upper surface of the first flexible substrate; the cone part of each micro-cone structure faces upwards and is flush with the upper surface of the first flexible substrate; the first liquid metal layer covers the upper surface of the first flexible substrate and all the micro-cone structures; the first packaging layer covers one surface, far away from the upper surface of the first flexible substrate, of the first liquid metal layer; meanwhile, the invention further provides a preparation method of the microstructure electrode, a flexible pressure sensor array based on the microstructure electrode and a preparation method of the flexible pressure sensor array, and the flexible pressure sensor array is high in sensitivity and low in crosstalk.

The invention discloses a resonance type flow field MEMS sensor based on PT symmetry and a preparation method thereof, and the method comprises the steps: two double-end fixed tuning fork resonators are coupled, are in mirror symmetry in structure, and are equal in mass; the two double-end fixed tuning fork resonators are positioned on the same straight line; the comb tooth capacitors are symmetrically distributed on two sides of each double-end fixed tuning fork resonator; the two adjustable damping circuits are connected with the electrode layer through leads, so that the two adjustable damping circuits are correspondingly connected with the two double-end fixed tuning fork resonators; the equivalent damping of the two adjustable damping circuits is opposite in sign and equal in size; the cilium supporting structure is suspended at one end of a double-end fixed tuning fork resonator; the micro lever is connected with the cilium supporting structure and the double-end fixed tuning fork resonator; the cilia is arranged on the cilia supporting structure; glass serves as a substrate of the sensor. According to the invention, the resonance type flow field MEMS sensor can obtain perturbation response performance with higher sensitivity, and sensitive measurement of weak flow velocity is realized.

The invention discloses an MEMS-based two-dimensional heat conduction type gas sensor and a manufacturing method thereof, and belongs to the technical field, gas molecules in a surrounding environment are heated through a thermopile, and the flow velocity information of gas is converted into electric signal change for measurement through different heat capacity characteristics of the gas molecules, so that the measurement accuracy is improved. The defects of single detection direction, high power consumption, poor measurement precision, low sensitivity, large temperature drift and the like of a low-end thermal conductivity sensor are overcome, the thermal conductivity sensor is adopted, the content of various gases in mixed gas is measured by utilizing different thermal conductivities of various gases, the cost is low, and the sensitivity is high; the silicon-based substrate and the heating resistor assembly enable the sensor to accurately sense gases with different heat conductivities, so that accurate gas detection is provided; the manufacturing process ensures the accuracy of the sensor structure and the manufacturing consistency, and the design and material selection of the sensor enable the sensor to be suitable for various environments and suitable for industrial application.

The invention relates to the technical field of uncooled infrared detectors, in particular to an area array type pixel packaging uncooled infrared detector and a preparation method thereof, and the preparation method comprises the steps: dividing a readout circuit substrate into a pixel region and a getter region, preparing a structural cavity, and manufacturing a first release hole and a second release hole in the structural cavity, releasing the sacrificial layer of the structural cavity; the first release hole is shielded, and only the second release hole is opened; a getter coating process is carried out on the structural cavity, and a getter material is deposited to a getter area through a second release hole in an area which is not shielded by the shielding baffle; after the getter of the structural cavity is deposited, the structural cavity shielding baffle is removed, and the first release hole is opened; and plating a hole sealing film on the structural cavity, completing the sealing of the vacuum cavity, and then activating the getter of the structural cavity. According to the invention, the vacuum degree of the detector cavity is ensured, and a powerful guarantee is provided for subsequent performance improvement of the detector.

The invention discloses a TGV technology-based MEMS thermal flow velocity sensor convenient for integrated packaging and a preparation method thereof. The TGV technology-based MEMS thermal flow velocity sensor comprises a glass substrate, a metal conductive through column, a side wall metal seed layer, an adhesion layer, a temperature measurement resistor, a central heating resistor, an insulation protection layer and a pressure welding block. Wherein the TGV conductive metal through column is formed by performing through hole forming on the glass and then performing side wall seed layer deposition and metal electroplating and filling processes. According to the metal conductive through column, an electric signal of a sensor chip on the front surface of the chip can be transmitted to the back surface of the chip, so that the chip can be conveniently integrated and packaged with other sensor chips, and the development requirements of MEMS devices in the multi-sensor integration and multi-functionalization directions are met. A traditional thermal type MEMS flow velocity sensor is manufactured on a silicon substrate, the sensor is manufactured on a glass through hole TGV substrate, the low heat conductivity coefficient of the glass substrate inhibits invalid heat diffusion of a heating resistor in the center of the thermal type flow velocity sensor, and the sensitivity and performance of the device are improved.

The invention provides a manufacturing method of an MEMS pressure sensor cavity, and the method comprises the steps: providing a wafer which comprises a chip region and a non-chip region which are formed on a substrate, and the chip region comprises a pressure device formed on the substrate; the manufacturing method of the cavity comprises the steps that S1, a plurality of monitoring areas are formed on a non-chip area on the front face of a wafer, each monitoring area comprises a preset position, a plurality of grooves with preset depths are formed in the vertex of the preset position, and specific materials are arranged at the bottoms in the grooves; s2, etching at the preset position and the corresponding position, mapped to the back surface of the wafer, of the pressure device through a wet etching process to form a cavity, when etching liquid of the wet etching process is in contact with the specific material, etching is stopped, at the moment, the thin film arranged above the cavity is a sensitive film, and the sensitive film is arranged on the back surface of the wafer; the thickness of the sensitive film is the same as the preset depth. According to the invention, the cost is low, and the etching depth of the cavity can be accurately controlled.

The invention provides an MEMS electrochemical gas sensor and a processing method thereof. The sensor is mainly composed of a breathable substrate structure, a counter electrode, a semi-solid electrolyte layer and a working electrode, the counter electrode, the semi-solid electrolyte layer and the working electrode form a sandwich structure, the thickness of the semi-solid electrolyte layer is 1-30 microns, and the semi-solid electrolyte layer is mainly of a film structure formed by baking a semi-solid electrolyte solution. According to the MEMS electrochemical gas sensor, the semi-solid electrolyte layer is mainly processed based on a semi-solid electrolyte material by adopting processes such as spraying or spin-coating, drying and curing, and the MEMS electrochemical gas sensor is designed and prepared by combining an MEMS process, so that the size of the sensor structure can be 1 mm, the miniaturized and zero-power-consumption work is realized, the gas sensor has a good response signal, and the gas sensor has a good application prospect. The load resistance is in a kiloohm level, and the output current is in a [mu] A level. The sensor can be used for monitoring reducing gases such as carbon monoxide, ethanol, formaldehyde and the like.

To provide a method for manufacturing a watch gear capable of connecting a connection part to a gear even when an interval between the teeth of the gear is small, a plate-like member, a watch gear and a watch.SOLUTION: A method for manufacturing a gear 50 comprises: an outer shape forming process in which by etching a silicon wafer 70 made of a brittle material, a gear 50 having a plurality of teeth 51, a frame part 55 arranged on the outside of the gear 50, and a connection part 56 having higher flexibility than the teeth 51 and connecting the frame part 55 and the tip part of the teeth 51 are formed; and a cutting process of cutting off the connection part 56 from the gear 50.SELECTED DRAWING: Figure 4