1761results about "Microstructural device manufacture" patented technology

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

The invention discloses a wafer bonding method, which comprises the following steps of: 1, providing a first wafer and a second wafer, the surface of the first wafer being provided with a microstructure with a high aspect ratio; step 2, cleaning the first wafer and the second wafer; step 3, performing vacuum drying treatment on the first wafer and the second wafer, wherein the vacuum pressure is controlled to be 0.1-10 Torr in the vacuum drying treatment process; step 4, carrying out pre-bonding on the first wafer and the second wafer to form a bonding body; and step 5, carrying out annealing treatment on the bonding body. Aiming at the problem of residual water in the pre-cleaning process in the bonding process of the micro-structure wafer with a high aspect ratio, the wafer is placed in a controllable vacuum environment, phase change boiling of liquid water under the condition of no heat input is realized, and the problem of high-temperature heat damage caused by an existing heating and baking method is effectively avoided.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention relates to the technical field of semiconductor devices, in particular to an MEMS inertial sensor and a preparation method thereof, and the sensor comprises a first supporting substrate and a first wafer which are stacked; a first groove is formed in one side, close to the first wafer, of the first supporting substrate; the first wafer comprises a fixed electrode, the projection of the fixed electrode on the first supporting substrate is located in the first groove, and a gap is formed between the bottom surface of the first groove and the fixed electrode; and a supporting column which extends along the direction vertical to the first wafer and is connected with the fixed electrode is arranged in the first groove. On the premise of ensuring sufficient mechanical support, stray capacitance between the bottom electrode and the substrate is effectively reduced so as to adapt to engineering application requirements in diversified working condition environments.

The invention discloses an electroplating process method for preparing a deep-etching thick metal mask, and belongs to the technical field of micro electro mechanical system electroplating processes. Comprising the following steps: firstly, carrying out photoetching and patterning on the surface of a wafer by using positive photoresist; then, carrying out seed layer sputtering on the wafer subjected to pattern photoetching, and forming a to-be-electroplated region with a preset pattern through a stripping process; then, photoetching is carried out on the to-be-electroplated area through negative photoresist, and a thick photoresist layer with the thickness larger than that of a preset metal coating is formed; and finally, the electroplating area is electroplated, and the metal coating with the preset thickness is obtained. According to the method, the negative photoresist process is adopted, so that the transverse growth of the metal coating is effectively inhibited, the perpendicularity of the side wall of the metal coating is improved, and meanwhile, the damage to the surface of the wafer when the seed layer in the non-electroplating area is removed is avoided. The problems that mushroom-shaped protrusions are easily formed on the edge of a plating layer, crystal grains are coarsened and the like in the electroplating process of an existing electroplating method are solved.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

The invention belongs to the field of hydrogen sensors, and particularly relates to an MEMS hydrogen sensor based on a high-entropy alloy and a preparation method of the MEMS hydrogen sensor. The hydrogen sensor comprises an insulating substrate, an interdigital electrode and a hydrogen sensitive layer, the hydrogen sensitive layer is formed by compounding high-entropy alloy nanoparticles composed of at least five transition metal elements and a semiconductor metal oxide substrate, and the high-entropy alloy nanoparticles are uniformly dispersed on the surface of the semiconductor metal oxide substrate to form a heterojunction; the atomic percent of each transition metal element in the high-entropy alloy nanoparticles is 5%-35%; the semiconductor metal oxide substrate is of a SnO2 or ZnO nano structure, and the specific surface area is larger than or equal to 50 m < 2 > / g. The preparation method is the preparation method of the hydrogen sensor. The hydrogen sensor provided by the invention has an ultralow hydrogen detection limit, the response speed is within a second level, the consumption of noble metal is greatly reduced, and the activity attenuation in a high-temperature environment is small.

The invention discloses a sub-nano two-dimensional heterojunction nanopore preparation method based on HIM pore preforming and STEM closed-loop control, and belongs to the technical field of micro-nano manufacturing and MEMS. HIM is utilized to form a 1-3 nm primary pore in a two-dimensional heterojunction film, and then level convergence of the pore diameter is achieved in the STEM through HAADF image intensity threshold monitoring and PID self-adaptive control; and the nano titanium dioxide is stably controlled in a range of 0.5-0.9 nm. The prepared hole has the characteristics that mu belongs to [0.50, 0.90] nm, sigma is smaller than or equal to 0.10 nm, RMS is smaller than or equal to 0.30 nm, the drift rate is smaller than or equal to 0.02 nm.h <-1 > and the like, the repeatability of the hole preparation process is high, the edge is smooth and stable, and the method is suitable for DNA sequencing, ion screening and environmental combined pollutant detection.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The invention discloses a wafer-level fusion bonding method and a preparation method of an MEMS device, and the method comprises the steps: providing a first silicon wafer which is provided with a front surface and a back surface which are opposite to each other; forming a groove in the front surface of the first silicon wafer and forming a chamfer at the corner of the top edge of the groove; forming a silicon oxide dielectric layer on the front surface of the first silicon wafer in a thermal oxidation growth mode, wherein the silicon oxide dielectric layer covers the bottom of the groove, the side wall of the groove and the front surface of the first silicon wafer outside the range of the groove; providing a second silicon wafer, wherein the second silicon wafer is provided with a front surface and a back surface which are opposite; and bonding the front surface of the second silicon wafer with the silicon oxide dielectric layer on the front surface of the first silicon wafer. According to the invention, the problem of bonding failure caused by rising of the edge of the groove after thermal oxidation growth can be solved.

A MEMS audio device includes a first wafer having a top with a first cavity and a bottom with a vent hole coupled to the first cavity, wherein the bottom having first contacts, a second wafer disposed upon the first wafer having a flexible material layer disposed above the first cavity, a third wafer disposed upon the second wafer having physical contacts coupled to the second wafer, wherein the third wafer includes a second cavity disposed above the flexible material layer, a wiring wafer disposed below the first wafer having a second vent hole coupled to the first cavity, wherein the wiring wafer having second contacts coupled to the first contacts, and wherein the flexible material layer forms a diaphragm for the MEMS audio device.

A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.

The invention discloses an MEMS device and a preparation method thereof, and relates to the technical field of semiconductor devices. The MEMS device comprises a substrate layer, a stress matching layer and a doped polycrystalline silicon structure layer which are sequentially stacked from bottom to top, and the preparation method comprises the following steps: forming a sacrificial layer on the substrate layer, patterning the sacrificial layer, and defining anchor regions of the stress matching layer and the doped polycrystalline silicon structure layer; depositing a stress matching layer on the patterned sacrificial layer, wherein the stress matching layer is a silicon nitride-based composite film with stress increased from bottom to top in a gradient manner; depositing a doped polycrystalline silicon structure layer on the stress matching layer; and sequentially carrying out patterning treatment and anchor region annealing treatment on the doped polycrystalline silicon structure layer, and carrying out removal treatment and drying treatment on the sacrificial layer to prepare the MEMS device. The MEMS device prepared by the invention has the characteristics of high stress matching, uniform doping concentration and relatively good process compatibility.

A micro-vacuum cell comprising at least one vacuum enclosure, the vacuum enclosure comprising at least a lid of a first material, the first material having a first coefficient of thermal expansion; a base of a second material, the second material having a second coefficient of thermal expansion, where the vacuum enclosure is formed above a portion of the base; and a cold weld compression seal attaching the lid to the base along a periphery of said portion of the base; wherein one of the first and second coefficients of thermal expansion is at least five times larger than the other of the first and second coefficients of thermal expansion; and wherein the pressure in the vacuum enclosure is smaller than an atmosphere.

The invention relates to an MEMS-CMOS device vertical interconnection integrated packaging preparation method, which comprises the following steps of: processing a TSV (Through Silicon Via) on a first silicon wafer (3), and filling crystalline silicon (2a); respectively processing a CMOS circuit layer and an RDL layer on the first silicon wafer, and processing a germanium bonding point (8) on the other surface of the first silicon wafer; a second SOI silicon wafer (10) and a third SOI silicon wafer (11) are fused and bonded to form a cavity (9), an aluminum / titanium / aluminum bonding point (12) is prepared on the third silicon wafer, an MEMS movable microstructure (13) is prepared on the third silicon wafer, the metal aluminum / titanium / aluminum bonding point and the MEMS movable microstructure are electrically connected, and the aluminum-germanium bonding point of the first silicon wafer and the aluminum-germanium bonding point of the third silicon wafer are subjected to eutectic bonding. According to the invention, the size of an integrated packaging chip of the MEMS device and the CMOS processing circuit is greatly reduced, and meanwhile, the RDL structure can realize wafer-level bonding packaging without considering the types, layout and size of the MEMS device and the CMOS circuit.

The invention relates to a nano groove array and a manufacturing method and application thereof, and the manufacturing method of the nano groove array comprises the following steps: taking single-stranded DNA (ssDNA) as a DNA brick, and carrying out self-assembly by adopting a complementary pairing principle of the ssDNA to obtain the nano groove array with a base and a side wall; wherein the width and the height of the nano groove array are fixed, the number of grooves is determined, and the nano groove array extends along a single direction; in the nano groove array, the width of the side wall and the width of the groove are equivalent to the diameter of two double-helix DNA (dsDNA). Compared with the prior art, the number of the grooves of the nano groove array is controllable, the width of the grooves is 4 nm, the period of the groove array is 8 nm, and the self-assembly defect can be greatly reduced.

The invention provides a microneedle mold manufacturing method, a microneedle manufacturing method, a microneedle mold and a microneedle, relates to the technical field of microneedles, and can improve the manufacturing efficiency of the microneedle mold. The method comprises the following steps: providing a glass substrate, wherein the surface of the glass substrate is provided with at least one target area; a laser beam is used for modifying the target area in the thickness direction of the glass substrate, so that an inverted-cone-shaped modified area is formed on the glass substrate; the modified area is subjected to etching treatment through etching liquid to form an inverted-cone-shaped hole, the microneedle mold is obtained, and the microneedle mold is used for manufacturing a microneedle.

The present disclosure relates to a method of manufacturing a layered structure for a MEMS apparatus, a layered structure manufactured by the method, and a MEMS apparatus 200 (300, 400, 500) comprising the layered structure. For the layered structure, a high-temperature curing step is provided in the manufacturing process, for example, after structuring the functional layer 3. The structured regions and trenches of the functional layer 3 and in particular the spring structure formed in the functional layer 3 have smoothened side walls and / or rounded corners in regions 3a after the curing step, so that their fracture limits can thus be increased and early fractures of the functional layer 3 during operation of the MEMS apparatus 200 (300, 400, 500) can be avoided.

The invention relates to a method for producing at least one micromirror element (200) as it can be used in micro-electro-mechanical systems (100), in particular for use in semiconductor technology equipment (1), and to a micro-electro-mechanical system (100) comprising corresponding micromirror elements (200). The process includes the following steps: - Providing a flat, two-sided mirror substrate (210); - Incorporating a predetermined shape at least on the side (215) of the provided mirror substrate (210) intended to be reflective; and - Applying a reflective coating (220) at least to the side (215) of the provided mirror substrate (210) intended to be reflective.

The invention relates to an element (100) for use in a micro-electro-mechanical system (200), in particular for use in semiconductor technology equipment, and to a micro-electro-mechanical system (200) comprising such an element (100). The element (100) comprises a MEMS structure (101) and at least one coating (140) applied over a large area to designated partial surfaces (135, 155) of the MEMS structure (101) from one side of the element (100), wherein the MEMS structure (100) has at least one otherwise non-functional special shape (160) with which at least a continuous parasitic coating (145) is avoided for certain areas away from the designated partial surfaces (135, 155).

Encapsulated MEMS devices and methods of fabrication with wafer-level fabrication processes are described which address small molecule diffusion into hermetically sealed cavities. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed during a back-end-of-the-line (BEOL) processing over a cap wafer including a planarized surface formed during a via reveal griding operation. In some configurations a small molecule barrier layer is not formed over the planarized surface during BEOL processing in order to allow an escape path for small molecules. In some configurations a small molecule barrier layer, or hydrogen barrier layer, is formed on a bottom side of a cap wafer prior to bonding the cap wafer to a device wafer during wafer-level fabrication.

The present disclosure relates to a method for manufacturing a layered structure for a MEMS apparatus, a layered structure which is a layered structure produced by the method, and a MEMS apparatus 200 which comprises such a layered structure. For the layered structure or the MEMS apparatus 200, an exemplary starting substrate is used in the manufacturing process, which forms the mechanically effective functional layer 10, wherein the mechanically effective functional layer 10 comprises a ferroelectric and / or piezoelectric material.

A method for manufacturing a component includes steps for providing a surface formed by a material, arranging a mask structure on the surface, and performing a material removal process, whereby material is removed from the surface and deposited on the mask structure where it forms a structure.

In a general aspect, antirelaxation coatings are disclosed for coating the interior surfaces of vapor cells. In certain aspects, a vapor cell includes a dielectric body having interior and exterior surfaces. The interior surface defines a cavity in the dielectric body, and the exterior surface defines an opening to the cavity. The vapor cell also includes an antirelaxation coating that is disposed on the interior surface of the dielectric body and includes an organosilane material. The vapor cell additionally includes a vapor or a source of vapor residing in the cavity as well as an optical window that covers the opening to the cavity. The optical window has a surface bonded to the exterior surface of the dielectric body to form a seal around the opening. The vapor or the source of vapor includes alkali metal atoms.

In order to extend the possible applications of the already known LIDE (laser-induced deep etching) method, this invention provides for producing a micromechanical comb structure (25) by placing a plurality of laser pulses (4) on a glass substrate (3) with a subsequent wet-chemical etching step for exposing the comb structure (25), and to precisely control the position of those laser pulses (4) that define the outer contour (6) of respective fingers (24) of the comb structure (25). This makes it possible to form very narrow fingers (24) that have uniform sidewalls (13), whereby very small gap dimensions (35) and uniform electrostatic actuation of the comb structure (25) are rendered possible. By controlling the phase angle φ and / or the extent of the sidewall scalloping of the fingers (24), it is also possible to favorably influence or set, in a targeted manner, the mechanical properties of the comb structure (25).

The invention relates to a MEMS component having a MEMS element with a chamber, the chamber being at least partially delimited by an ASIC component, the ASIC component having a plurality of conductor track layers which lie one above the other in the y-direction between a cover layer and a bottom layer, the conductor track layers being connected to circuit elements of the ASIC component and / or sensor elements and / or actuator elements of the MEMS element, the ASIC component is adjacent to the chamber via the cover layer, the conductor track layers comprise at least one first conductor track layer and at least one second conductor track layer, the first conductor track layer is arranged between the second conductor track layer and the cover layer, the first conductor track layer comprises at least one first conductor track, and the second conductor track layer comprises at least one second conductor track. The first conductor path has a layer stack consisting of an aluminum layer and a titanium layer arranged one above the other in the y-direction, the titanium layer being arranged between the second conductor path layer and the aluminum layer, the titanium layer having a thickness in the y-direction greater than 40 nm, the second conductor path layer having a copper-containing second conductor path, the thickness of the titanium layer being greater than 40 nm, and the thickness of the aluminum layer being greater than 40 nm. The titanium layer is provided as a getter layer for bonding hydrogen, the hydrogen being releasable from the copper layer of the second conductor track, in particular from the stack of copper-based conductor track layers, and the titanium layer reducing or preventing the entry of the released hydrogen into the chamber.

The present application relates to the technical field of microelectrode preparation, and particularly relates to a transparent microelectrode array chip preparation method, comprising the following steps: S1. pretreating a glass substrate to improve the substrate surface cleanliness and adsorbability of the electrode film; S2. evaporating an ITO film on the surface of the pretreated glass substrate by using a magnetron sputtering process, as a transparent electrode; S3. spin-coating a photoresist on the surface of the ITO film and performing a patterning treatment, and then etching the ITO film to form a preset electrode structure by using a dry etching process, and then removing the photoresist and cleaning and drying; S4. coating an insulating layer on the surface of the substrate by using a PECVD process, patterning the insulating layer and etching by using a dry etching process to realize windowing, and then removing the photoresist and cleaning and drying; and realizing photoelectric synchronous detection. Avoiding metal residue interference: photoresist masks are used throughout the etching process to replace traditional metal hard masks.

A method for forming a semiconductor structure includes following operations. An interconnect structure is formed over a substrate. The interconnect structure includes a top conductive layer. A dielectric structure is formed over the interconnect structure. The dielectric structure is patterned to simultaneously form a cavity and a protrusion in the cavity. A MEMS substrate is bonded to the dielectric structure to seal the cavity. The protrusion is separated from the MEMS substrate.

The application provides a microelectronic element and a preparation method thereof and an electronic device, and relates to the technical field of integrated circuits. The microelectronic element comprises a substrate, at least two adjusting members, a support structure and a micro-mirror structure; the at least two adjusting members are arranged along a first direction, the first end of each adjusting member is arranged on the substrate, and the second end of each adjusting member is arranged in an extendable and retractable manner along a second direction; the support structure comprises a support beam, a support column and a rotating beam, the support beam is connected to the second end of the adjusting member, the surface of the support beam away from the substrate is connected to the rotating beam through the support column, and the surface of the rotating beam away from the support beam is connected to the micro-mirror structure. The application can solve the problems that the structure of the microelectronic element is complex and the adjustment process of the deflection angle of the micro-vibration mirror is difficult.