4226results about "Microstructural device manufacture" patented technology

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

Microelectromechanical component (100) for motion measurement, comprising: a fortified section (118); a single, central anchor (106) coupled to the attached section (118) with four sides; a first non-straight suspension element (108) coupled to the anchor (106) on one side of the anchor (106); a second non-straight suspension member (120) coupled to the anchor (106) on the same side of the anchor (106), wherein the second non-straight suspension member (120) has a shape and position that mirrors the first non-straight suspension member (108) on a plane (122) bisecting the anchor; and a test mass (104) which is planar, wherein the test mass (104) is suspended at least partially on the first non-straight suspension member (108) and the second non-straight suspension member (120) such that the test mass (104) is rotatable about the anchor (106) and displaceable in a plane which is parallel to the attached section (118), where the first and second non-straight suspension members (108, 120) are bending bearings, wherein the first non-straight suspension member (108) has a C-shape, wherein the C-shape includes an inner section (110) which is coupled to the anchor (106) and extends towards the plane (122) bisecting the anchor, a central section (114) which includes a nearby section and has a distant section, whereby the near section is coupled to the inner section (110), and the far section extends away from the anchor (106) along the plane (122) bisecting the anchor and is coupled to an outer section (112) extending away from the plane (122) bisecting the anchor.

The invention provides a flexible palladium film hydrogen sensor and a preparation method thereof, the flexible palladium film hydrogen sensor is sequentially provided with a flexible substrate, a hydrogen sensitive sensing layer and a contact connection layer from bottom to top, and the contact connection layer is connected with a resistance measurement unit; and the hydrogen-sensitive sensing layer is a palladium or palladium alloy film with a conical micro-nano structure. The palladium or palladium alloy thin film with the conical micro-nano structure provides a hydrogen sensor conical surface micro-nano structure with a high specific surface area for the flexible palladium thin film hydrogen sensor, and the process that hydrogen is adsorbed, dissolved and diffused into the palladium or palladium alloy thin film is accelerated, so that the response speed of the sensor is increased; according to the hydrogen sensor, the flexible substrate is adopted, so that the hydrogen sensor can be conveniently arranged in various narrow spaces, and the applicability of the hydrogen sensor in various scenes is improved.

The invention provides a preparation method of an island and beam film structure micro differential pressure sensor with an IC (Integrated Circuit), which comprises the following steps: arranging an N-type buried layer, a P-type buried layer and an island film structure on an SOI (Silicon On Insulator) silicon wafer, then connecting the SOI silicon wafer with a double-parabolic silicon wafer, and arranging a medium isolation groove, an N-type buried layer connecting region, a P well, a P-type buried layer connecting region, a sensitive resistor, a P-type base region, an N-type base region, an N-type emitter region and a P-type emitter region on the SOI silicon wafer. According to the invention, the preparation of the complementary bipolar transistor double-buried layer is completed by combining a semiconductor manufacturing technology and an MEMS manufacturing technology under the condition of not using an epitaxial process; the process flow is integrally simplified, and the preparation efficiency is improved.

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

A MEMS sensor and a preparation method therefor. The method comprises: forming a first oxide layer on a substrate wafer, performing patterned etching on the first oxide layer, and performing deposition and doping on the first oxide layer that has undergone the patterned etching, so as to form a first polycrystalline silicon layer; performing patterned etching on the first polycrystalline silicon layer to form a wiring, and depositing a second oxide layer on the first polycrystalline silicon layer; upon performing patterned etching on the second oxide layer, performing deposition and doping to form a second polycrystalline silicon layer; performing patterned etching on the second polycrystalline silicon layer to form bonding anchor points and a capacitive plate having a lower height than the bonding anchor points; bonding a device wafer with the bonding anchor points, and performing patterned etching on the device wafer to generate a movable structure, so as to obtain a device layer; and bonding the side of the device wafer distant from the substrate wafer with a cover layer.

The invention belongs to the technical field of two-dimensional materials, and particularly relates to a preparation method of a corner heterojunction. According to the preparation method, when the two-dimensional material sheet is prepared, based on the characteristics of smooth surface and high viscosity of the hydrophilic polymer layer, a large-area two-dimensional material can be stripped from the silicon substrate with the hydrophilic polymer film layer, the stripping process is clean, and the two-dimensional material is not damaged; when the corner heterojunction is prepared, an intermediate two-dimensional material or an active interface does not contact any polymer in the whole transfer process by adjusting the shape and size of a transfer medium based on a Van der Waals force pickup transfer method, so that the pollution of a heterogeneous interface is greatly reduced; the efficient and fast preparation of the Van der Waals heterostructure without polymer residues and bubbles on the interface is realized.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

The invention discloses a TGV technology-based MEMS thermal flow velocity sensor convenient for integrated packaging and a preparation method thereof. The TGV technology-based MEMS thermal flow velocity sensor comprises a glass substrate, a metal conductive through column, a side wall metal seed layer, an adhesion layer, a temperature measurement resistor, a central heating resistor, an insulation protection layer and a pressure welding block. Wherein the TGV conductive metal through column is formed by performing through hole forming on the glass and then performing side wall seed layer deposition and metal electroplating and filling processes. According to the metal conductive through column, an electric signal of a sensor chip on the front surface of the chip can be transmitted to the back surface of the chip, so that the chip can be conveniently integrated and packaged with other sensor chips, and the development requirements of MEMS devices in the multi-sensor integration and multi-functionalization directions are met. A traditional thermal type MEMS flow velocity sensor is manufactured on a silicon substrate, the sensor is manufactured on a glass through hole TGV substrate, the low heat conductivity coefficient of the glass substrate inhibits invalid heat diffusion of a heating resistor in the center of the thermal type flow velocity sensor, and the sensitivity and performance of the device are improved.

A microelectromechanical sensor includes a supporting body, a sensing structure including a measuring chamber and a sensitive element, the sensitive element being partially in the supporting body and facing the measuring chamber; and a cap coupled to the supporting body. The cap includes a buried cavity, inlet holes communicating with the environment external to the sensor and with the buried cavity, and coupling holes communicating with the measuring chamber and with the buried cavity. The inlet holes is in fluidic communication with the coupling holes by the buried cavity, and the inlet holes are offset with respect to the coupling holes.

The present disclosure, in some embodiments, relates to a MEMS (Microelectromechanical systems) structure. The MEMS structure includes a first comb structure having a first plurality of comb fingers extending outward from a first branch. A second comb structure has a second plurality of comb fingers extending outward from a second branch. The first plurality of comb fingers are laterally interleaved between the second plurality of comb fingers. The first plurality of comb fingers respectively include a weighted core material and one or more peripheral materials. The weighted core material has a larger density than the one or more peripheral materials.

The invention relates to the technical field of structures and preparation of hydrogen sensor chips, in particular to a preparation method of a vehicle-mounted catalytic combustion type hydrogen sensor chip based on an MEMS (micro-electromechanical system), which comprises the following steps: step 1, growing a layer of SiO2 with low thermal conductivity and insulativity on the front and back surfaces of a Si wafer by adopting a plasma enhanced chemical vapor deposition technology; 2, continuing to grow a SiNX structural layer on the front surface of the Si wafer to form a composite supporting layer with the SiO2 / SiNX micron thickness; 3, patterning is conducted on the surface of the composite film through the photoetching technology, a layer of metal platinum is prepared on the surface of the composite film through the magnetron sputtering technology to serve as a heating electrode and a testing electrode, and the two electrodes are arranged in parallel to form a double-snake-shaped structure which comprises a working area and a welding disc. The catalytic combustion type hydrogen sensor has the advantages of being simple in technological process, low in power consumption and high in response speed, and the response time is 1t; 2s.

The invention relates to the technical field of micro-nano motors, in particular to a preparation method and application of a micro-nano motor for improving oil reservoir exploitation. Due to the wheel shape of the micro-nano motor and the hydrophobic modification effect, the micro-nano motor can move in a high-viscosity oil reservoir environment in oil reservoir exploitation. Under the action of a magnetic field, the micro-nano motor can controllably move in a complex three-dimensional core environment, and the size of the micro-nano motor can be reduced when the micro-nano motor encounters a narrower pore throat, so that the micro-nano motor can smoothly pass through the pore throat. When the micro-nano motor makes contact with crude oil drops, the micro-nano motor can carry the oil drops to move and carry the oil drops to a high-permeability area of the oil reservoir, and the motor carrying the oil drops is extracted to the ground along with displacement fluid, so that the recovery rate of the oil reservoir is increased. Meanwhile, the micro-nano motor can be recycled for multiple times.

A cover for an infrared detector and a method of fabricating the cover are disclosed. The cover comprises a wafer comprising a material such as silicon that transmits infrared radiation. The wafer has a first surface and a second surface opposite the first surface. An antireflective region is formed in the wafer to enhance transmission of infrared radiation through the cover. The antireflective region comprises a first plurality of antireflective elements such as moth-eyes formed in the first surface. The first plurality of antireflective elements are sized and shaped and arranged relative to one another to form a region of graded refractive index at the first surface so as to reduce the amount of infrared radiation reflected by the cover at the antireflective region. The cover comprises a wall extending from the first surface and surrounding the antireflective region. The wall comprises a plurality of layers of material deposited on the wafer so that, when the cover is bonded to a sensor substrate via the wall, a cavity is formed that encapsulates a sensor region of the sensor substrate. The depth of the cavity may be adjusted by depositing the plurality of layers of material with a combined thickness equivalent to the desired depth of the cavity. A second plurality of antireflective elements may be formed in the second surface to enhance the antireflective properties of the antireflective region.

The MEMS triaxial accelerometer with the self-checking function comprises a cap layer, a structural layer and a substrate layer, the structural layer is clamped and packaged between the cap layer and the substrate layer, the structural layer comprises an X-axis acceleration detection array, a Z-axis acceleration detection array and a Y-axis acceleration detection array which have the self-checking function, and the X-axis acceleration detection array, the Z-axis acceleration detection array and the Y-axis acceleration detection array have the self-checking function. A Z-axis sensitive structure release groove is formed in the middle of the structural layer, the Z-axis acceleration detection array can move in the Z-axis direction along the Z-axis sensitive structure release groove, an X-axis sensitive structure release groove is formed in one side of the Z-axis acceleration detection array, and the X-axis acceleration detection array can move in the X-axis direction along the X-axis sensitive structure release groove. A Y-axis sensitive structure release groove is formed in the other side of the Z-axis acceleration detection array, and the Y-axis acceleration detection array can move in the Y-axis direction along the Y-axis sensitive structure release groove. The accelerometer provided by the invention has a self-checking function, can apply known signals, and is used for detecting the response of the sensor under different working conditions.

Integrated circuit packages having electrical and optical connectivity and methods of making the same are disclosed herein. According to one embodiment, an integrated circuit package includes a glass substrate, an optical channel, and redistribution layers. The integrated circuit package further includes an integrated circuit chip positioned on the glass substrate and in optical communication with the optical channel and in electrical continuity with the redistribution layers.

Some implementations herein provide an optical signal redirection structure. The optical signal redirection structure includes a planar silicon surface having a <110> crystal grain orientation. The optical signal redirection structure includes a dielectric region over the planar silicon surface. The optical signal redirection structure includes a mirror structure suspended in the dielectric region, where the mirror structure is approximately parallel to the planar silicon surface.

The invention belongs to the field of micro-nano structures, and relates to a preparation method of a nano needle tip split ring 3D structure periodic array. According to the method, after a reflecting layer and a supporting layer are deposited on a silicon substrate, polystyrene nanospheres are self-assembled, the volume of the nanospheres is reduced through reactive ion etching, then two times of inclined magnetron sputtering are carried out, deposited precious metal is etched through a reactive ion etching machine, and the silicon substrate is obtained. And removing the nanosphere mask to obtain the 3D structure periodic array of the nanotip split ring. The method has the characteristics of simple preparation process, good uniformity, high order degree and strong repeatability, and has wide application potential in the fields of SERS (Surface Enhanced Raman Scattering), photoelectric property detection and the like.

The invention discloses a batch processing technology of micro-fluidic chips, and relates to the technical field of chip processing. The method comprises the following steps: firstly, providing at least two layers of polymer coiled materials, namely a first coiled material for forming a micro-channel structure and a second coiled material for closing a micro-channel, the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA), and the coiled materials are continuous coiled materials selected from polyethylene glycol terephthalate (PET), cycloolefin polymer (COP), polycarbonate (PC) or polymethyl methacrylate (PMMA); the thickness of the coiled material is 50-500 microns; secondly, carrying out continuous compression molding processing on the surface of the first coiled material through a roll-to-roll processing platform; through a roll-to-roll continuous process, micro-channel mold pressing, functional deposition, precise alignment bonding and online cutting are integrated, high-efficiency, high-consistency and high-integration-level batch manufacturing of the micro-fluidic chip is realized, and manual intervention and production cost are remarkably reduced.

The invention discloses a wafer bonding method, which comprises the following steps of: 1, providing a first wafer and a second wafer, the surface of the first wafer being provided with a microstructure with a high aspect ratio; step 2, cleaning the first wafer and the second wafer; step 3, performing vacuum drying treatment on the first wafer and the second wafer, wherein the vacuum pressure is controlled to be 0.1-10 Torr in the vacuum drying treatment process; step 4, carrying out pre-bonding on the first wafer and the second wafer to form a bonding body; and step 5, carrying out annealing treatment on the bonding body. Aiming at the problem of residual water in the pre-cleaning process in the bonding process of the micro-structure wafer with a high aspect ratio, the wafer is placed in a controllable vacuum environment, phase change boiling of liquid water under the condition of no heat input is realized, and the problem of high-temperature heat damage caused by an existing heating and baking method is effectively avoided.

The invention relates to a method for the temporary fixing of micro-electro-mechanically movable elements (100), in particular those that can be used in equipment for semiconductor technology. In the method for temporarily fixing an element (100) that is micro-electro-mechanically movable relative to a basic structure (101) in at least one degree of freedom by at least one actuator (102), the fixing is carried out by filling at least one cavity (103) provided for the movement of the element, wherein - the material (202) intended for filling the at least one cavity (103) is introduced into the at least one cavity (103) in gaseous form in such a way that the material (202) is adsorbed and fills the at least one cavity (103) in layers, and - wherein at least one surface (200) of the movable element (100) to be kept free of the material (202) intended for filling is heated to a temperature above the sublimation temperature of the material (202) in order to prevent adsorption of the material (202) on the at least one surface (200) to be kept free. The invention also relates to a micro-electro-mechanically movable element (100) which is or was fixed by a method according to the invention.

The invention provides an MEMS pressure sensor, a preparation method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, sequentially forming a first pressure sensing film layer, a first sacrificial layer and a first sub-electrode layer on the first substrate, and sequentially forming a second pressure sensing film layer, a second sacrificial layer and a second supporting layer on the second substrate; respectively etching the first sub-electrode layer and the second supporting layer to form a plurality of first release holes and a plurality of second release holes; removing part of the first sacrificial layer to form a first cavity, and removing part of the second sacrificial layer to form a second cavity; the first sub-electrode layer and the second supporting layer are bonded, and the first release holes and the second release holes are arranged in a staggered mode; and etching the first substrate to form a back cavity, and removing the second substrate to expose the second pressure sensing film layer. According to the scheme, the first sub-electrode layer and the second supporting layer are bonded to form the MEMS pressure sensor with the double pressure sensing film layers, and the sensitivity and the linearity are improved.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides a hybrid-driven MEMS device and a preparation method thereof, and the method comprises the steps: forming a first actuating structure in a first substrate, forming a piezoelectric composite film layer on the first actuating structure, applying voltages with opposite electrical properties to a first electrode layer and a second electrode layer, enabling a piezoelectric layer to deform under the effect of an inverse piezoelectric effect, and enabling the piezoelectric composite film layer to form a piezoelectric composite film layer; the movable end of the first actuating structure is driven to move; a second cavity is formed in the second substrate, a third electrode layer is formed in the second cavity, voltage which is the same as or opposite to that of the second electrode layer is applied to the third electrode layer, and the third electrode layer and the second electrode layer serve as electrodes for electrostatic driving. According to the MEMS device, the first actuating structure and the second actuating structure are arranged, so that the deformation deflection of the movable end of the first actuating structure is further increased on the basis of displacement generated by piezoelectric driving, the hybrid-driven MEMS device is formed, the defects of independent driving of piezoelectric driving and electrostatic driving are overcome, and the MEMS device can achieve larger displacement under the same voltage during accurate deflection.

A method of fabricating nanostructured silicon on a substrate comprises a step of conducting a catalytic chemical vapor deposition using a Si-containing precursor and a carrier gas to generate on the substrate a silicon layer comprising columnar polycrystalline silicon structures and amorphous silicon containing material therebetween. The method further comprises conducting an anisotropic etching process of the silicon layer to remove the silicon between the polycrystalline silicon columns in order to fabricate the nanostructured silicon on the substrate.

The invention is applicable to the technical field of semiconductor devices, and provides a surface-mounted IMU (inertial measurement unit) and a preparation method thereof, and the surface-mounted IMU comprises a PCBA (printed circuit board assembly), a ceramic adapter plate, an MEMS (micro-electromechanical system) inertial chip and a Teflon cover plate; a groove is formed in the ceramic adapter plate; the size of the groove is suitable for the MEMS inertial chip; the bottom bonding pad of the ceramic adapter plate is connected with the top bonding pad of the ceramic adapter plate through a half hole; the MEMS inertial chip is arranged in the groove and is bonded with the ceramic adapter plate through an insulating gold wire; the ceramic adapter plate is welded on the assembly surface of the PCBA; the Teflon cover plate and the PCBA form a cavity, and the ceramic adapter plate and the MEMS inertial chip are placed in the cavity. The requirements of small size, high precision and low power consumption can be met at the same time, the burden of a vehicle-mounted power supply is relieved, and the requirement for the integration level of the whole vehicle is improved.