2224results about How to "Reduce unevenness" patented technology

In a selective growth method, growth interruption is performed at the time of selective growth of a crystal layer on a substrate. Even if the thickness distribution of the crystal layer becomes non-uniform at the time of growth of the crystal layer, the non-uniformity of the thickness distribution of the crystal layer can be corrected by inserting the growth interruption. As a result of growth interruption, an etching rate at a thick portion becomes higher than that at a thin portion, to eliminate the difference in thickness between the thick portion and the thin portion, thereby solving the problem associated with degradation of characteristics due to a variation in thickness of the crystal layer, for example, an active layer. The selective growth method is applied to fabrication of a semiconductor light emitting device including an active layer as a crystal layer formed on a crystal layer having a three-dimensional shape by selective growth.

In a selective growth method, growth interruption is performed at the time of selective growth of a crystal layer on a substrate. Even if the thickness distribution of the crystal layer becomes non-uniform at the time of growth of the crystal layer, the non-uniformity of the thickness distribution of the crystal layer can be corrected by inserting the growth interruption. As a result of growth interruption, an etching rate at a thick portion becomes higher than that at a thin portion, to eliminate the difference in thickness between the thick portion and the thin portion, thereby solving the problem associated with degradation of characteristics due to a variation in thickness of the crystal layer, for example, an active layer. The selective growth method is applied to fabrication of a semiconductor light emitting device including an active layer as a crystal layer formed on a crystal layer having a three-dimensional shape by selective growth.

A portable terminal monitors a signal level of a short-range wireless signal from a wireless communication apparatus. If the signal level drops so low that a state of connection for short-range wireless communications cannot be maintained between the two apparatuses, use of predetermined functions of the portable terminal is limited. A short-range wireless communication facility of the portable terminal and the wireless communication apparatus move into a particular operation mode if communications do not occur therebetween at least for a predetermined time period. In monitoring the signal level of the wireless signal from the wireless communication apparatus in the particular operation mode, the portable terminal reduces a response speed at which to detect a signal level change. This causes the wireless communication apparatus to delay issuing a request for an increase in transmission power, thereby reducing unevenness of the working distance at which to alert a user to the unusual distance traveled between the two apparatuses or beyond which to limit the use of some functions of the portable terminal.

PCT No. PCT / JP96 / 01775 Sec. 371 Date Jan. 31, 1997 Sec. 102(e) Date Jan. 31, 1997 PCT Filed Jun. 26, 1996 PCT Pub. No. WO97 / 01863 PCT Pub. Date Jan. 16, 1997A crystalline semiconductor layer can be formed by forming a semiconductor film on an inexpensive conventional substrate. Next, perform a first annealing process in which nearly the entire surface of the semiconductor film is exposed to laser irradiation or other forms of irradiation, and then perform a second annealing process consisting of rapid thermal annealing. This enables the formation of a high quality crystalline semiconductor film with high throughput but without subjecting the substrate to undue thermal stress. When this invention is applied to thin film transistors, good transistors having high performance are easily fabricated. When this invention is applied to solar cells, energy conversion efficiency is increased.

An optical device including an optical waveguide upon which a group of parallel light beams different in traveling direction from each other are incident and from which the group of parallel light beams go out after propagated by repeated total reflection through it. The optical waveguide includes a first reflection-type volume hologram grating, and a second reflection-type volume hologram grating. The pitches of interference fringes on the hologram surfaces of the first and second reflection-type volume hologram gratings are equal to each other. In at least the second reflection-type volume hologram grating, the angle formed between the interference fringes and hologram surfaces are varied continuously or stepwise within the hologram in relation to the main incident light beam so as to meet the Bragg condition. Therefore, it is possible to reduce the unevenness of color and brightness due to angles of view.

A light emitting device comprises: an LED chip mounted in a recess formed in a mounting substrate; a wavelength converting member that is disposed so as to cover the recess and the edge area around the recess and that is excited by light emitted from the LED chip to emit light of a wavelength different from an excitation wavelength; and an emission control member disposed at a light output side of the wavelength converting member so as to allow emission of light coming from an area of the wavelength converting member that corresponds to the recess and to prevent emission of light coming from an area of the wavelength converting member that corresponds to the edge area around the recess. This can prevent variations in color between light emitted from the central part of the wavelength converting member and light emitted from the part of the wavelength converting member that is located on the edge area around the recess of the mounting substrate, thereby reducing unevenness of color on the irradiation surface.

An LED array chip (2) includes blue LEDs (6) and red LEDs (8). The blue LEDs (6) are formed by epitaxial growth on an SiC substrate (4). Bonding pads (46 and 48) are formed on the SiC substrate (4) in a wafer fabrication process. The red LEDs (8) are separately manufactured from the blue LEDs (6), and flip-chip mounted on the bonding pads (46 and 48) formed on the SiC substrate.

A novel polarizing plate is disclosed. The polarizing plate comprises a polyvinyl alcohol based polarizer, a protective film comprising a saturated alicyclic structure-containing thermoplastic polymer, and an adhesive layer comprising a water-soluble polymer between the protective film and the polarizer wherein the surface of the protective film contacting with the adhesive layer is subjected to a surface treatment.

The present invention discloses improved methods and apparatus for forming sheet glass. In one embodiment, the invention introduces a counteracting force to the stresses on the forming structure in a manner such that the thermal creep which inevitably occurs has a minimum impact on the glass flow characteristics of the forming structure.

A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

PCT No. PCT / DE96 / 01665 Sec. 371 Date Jul. 23, 1998 Sec. 102(e) Date Jul. 23, 1998 PCT Filed Aug. 31, 1996 PCT Pub. No. WO97 / 08477 PCT Pub. Date Mar. 6, 1997The invention concerns a system for active reduction of radial vibrations of a rotating shaft (4), especially the drive shaft of an internal combustion engine (1), with at least one active electromagnetic device (7; 10; 15, 16), which is configured and controlled such that it applies radial forces to the shaft (4), which counteract the radial vibrations of the shaft (4).

Disclosed are: an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and a method for etching a multilayer thin film having a copper layer and a molybdenum layer contained therein using the etching solution. Specifically disclosed are: an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which comprises (A) hydrogen peroxide, (B) an inorganic acid having no fluorine atom, (C) an organic acid, (D) an amine compound having 2 to 10 carbon atoms and also having an amino group and a hydroxy group in the total number of two or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH value of 2.5 to 5; and an etching method using the etching solution.