Ultrathin silicon oxynitride film material and preparation method and application thereof

A silicon oxynitride and film material technology, which is applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problem of large non-uniformity of silicon oxynitride film, and achieves a simple and easy preparation process and large size. Application potential, effect of improved uniformity

Active Publication Date: 2015-04-08

THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA

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AI-Extracted Technical Summary

Problems solved by technology

[0008] In order to overcome the defect that the silicon oxynitride film is relatively uneven in the prior art, one of the purposes of the present invention is to provide a silicon oxynitride film material. The film material provided by the present invention has good unifo...

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Abstract

The invention discloses an ultrathin silicon oxynitride film material and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a chemical vapor deposition equipment cavity, introducing NH3, O2 gas and SiH4-containing gas as reactant gases, introducing a carrier and protective gas, performing vapor deposition, thereby obtaining the silicon oxynitride film material, wherein the operating temperature of the chemical vapor deposition equipment cavity is 100-260 DEG C, the working pressure is 1-4Pa, and the power is 200-450W; the vapor deposition time is 15-40 seconds; the volume ratio of the SiH4 gas to the O2 gas is 9-110; the volume ratio of the SiH4-containing gas to the NH3 gas is 3-11; and the volume ratio of the SiH4-containing gas to the carrier and the protective gas is 0.1-1. The thickness of the silicon oxynitride film material prepared on a four-inch silicon substrate is 6-9nm, and the non-uniformity of the film is lower than 0.7 percent.

Application Domain

Chemical vapor deposition coating

Technology Topic

Operating temperatureFilm material +7

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Examples

Experimental program(5)

Example Embodiment

[0044] Example 1

[0045] A silicon oxynitride film material is prepared by the following method:

[0046] (1) Using polished P-type (100) doped monocrystalline silicon as the substrate, and performing the following pretreatment: first, soak the substrate with 5wt% HF acid for 3 minutes, then rinse with deionized water, and finally dry its surface;

[0047] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma-enhanced chemical vapor deposition equipment, and evacuated the deposition chamber, so that the vacuum degree of the background is 1×10 -5 Pa about, and heat the substrate to 230℃;

[0048] (3) with SiH containing more than 99.99% purity 4 gas, NH 3 gas, O 2 Gas and Ar 2 Gas is the gas source; among them, contains SiH 4 gas, O 2 Gas, NH 3 gas is the reactive gas, Ar 2 The gas is the carrier gas and shielding gas, and the supplied Ar 2 gas, O 2 Gas, NH 3 gas and containing SiH 4 The gas flow rates are: 400sccm, 1.2sccm, 26.8sccm, 130.5sccm; the working pressure of the deposition chamber is controlled to be 2Pa, the power is 362W, and the chemical vapor deposition is performed for 22s;

[0049] (4) in Ar 2 Under the atmosphere, the temperature is lowered to room temperature to obtain a silicon oxynitride film material with good uniformity and a thickness of about 8 nm;

[0050] Performance characterization:

[0051] The obtained SiON film material is tested by spectral ellipsometer (equipment model is SE 850), and the test conditions are: room temperature, scanning in the wavelength range of 200-930 nm, and 17 test points are selected, and the distribution of the 17 test points is 1 The center point, 8 circumferential points with a radius of r, and 8 circumferential points with a radius of 2r, the circumferential points are evenly distributed on the circumference, where the value of r is less than 1/4 of the shortest side length of the substrate ( figure 1 is a schematic diagram of the test point); the test results are as follows figure 1 shown; the non-uniformity was calculated to be 0.7%.

Example Embodiment

[0052] Example 2

[0053] A silicon oxynitride film material is prepared by the following method:

[0054] (1) A Ti film with a thickness of 200 nm was prepared on a polished P-type (100) doped single-crystal silicon wafer, and this was used as a substrate, and the following pretreatment was carried out: firstly, ultrasonically used acetone and isopropanol for 5 min each, Then rinse with deionized water, and finally dry the surface;

[0055] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma-enhanced chemical vapor deposition equipment, and evacuated the deposition chamber, so that the vacuum degree of the background is 1×10 -5 Pa about, and heat the substrate to 150℃;

[0056] (3) with SiH containing more than 99.99% purity 4 gas, NH 3 gas, O 2 Gas and Ar 2 Gas is the gas source; among them, contains SiH 4 gas, O 2 Gas, NH 3 gas is the reactive gas, Ar 2 The gas is the carrier gas and shielding gas, and the supplied Ar 2 gas, O 2 Gas, NH 3 gas and containing SiH 4 The gas flow rates are: 385sccm, 4sccm, 24sccm, 130.5sccm; the working pressure of the control deposition chamber is 3Pa, the power is 328W, and the chemical vapor deposition is performed for 25s;

[0057] (4) in Ar 2 Under the atmosphere, the temperature is lowered to room temperature to obtain a silicon oxynitride film material with good uniformity and a thickness of about 9nm;

[0058] The obtained SiON film material was tested by spectroscopic ellipsometer (equipment model SE 850), and the test method was the same as that of the performance characterization method in Example 1; its non-uniformity was 0.68% by calculation.

Example Embodiment

[0059] Example 3

[0060] A silicon oxynitride film material is prepared by the following method:

[0061] (1) make substrate with polished sapphire, and carry out the following pretreatment: first, the substrate is ultrasonicated for 5min each with acetone and isopropanol, then cleaned with deionized water, and finally its surface is dried;

[0062] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma-enhanced chemical vapor deposition equipment, and evacuated the deposition chamber, so that the vacuum degree of the background is 1×10 -6 Pa about, and heat the substrate to 260℃;

[0063] (3) with SiH containing more than 99.99% purity 4 gas, NH 3 gas, O 2 Gas and Ar 2 Gas is the gas source; which contains SiH 4 gas, O 2 Gas, NH 3 gas is the reactive gas, Ar 2 The gas is the carrier gas and shielding gas, and the supplied Ar 2 gas, O 2 Gas, NH 3 gas and containing SiH 4 The gas flow rates are: 450sccm, 10.5sccm, 17.5sccm, 130.5sccm; the working pressure of the deposition chamber is controlled to be 2.5Pa, the power is 280W, chemical vapor deposition is performed for 30s, and a layer of silicon oxynitride with a thickness of about 10nm is obtained. film;

[0064] (4) in Ar 2 Under the atmosphere, the temperature is lowered to room temperature to obtain a silicon oxynitride film material with good uniformity and a thickness of about 8.5 nm;

[0065] The obtained silicon oxynitride film material was tested by spectroscopic ellipsometer (equipment model: SE 850), and the test method was the same as that of the performance characterization method in Example 1; its non-uniformity was 0.65% by calculation.

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PUM

Property	Measurement	Unit
Thickness	10.0	nm
Thickness	8.0	nm
tensile		MPa
Particle size		Pa
strength	10

Description & Claims & Application Information

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Classification and recommendation of technical efficacy words

Good uniformity
Improve uniformity

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Simple preparation process Great application potential Chemical vapor deposition Gas phase Silicon

Ultrathin silicon oxynitride film material and preparation method and application thereof

AI-Extracted Technical Summary

Problems solved by technology

Abstract

Image

Examples

Example Embodiment

Example Embodiment

Example Embodiment

PUM

Description & Claims & Application Information

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