Ultrathin silicon oxynitride film material and preparation method and application thereof
A silicon oxynitride and film material technology, which is applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problem of large non-uniformity of silicon oxynitride film, and achieves a simple and easy preparation process and large size. Application potential, effect of improved uniformity
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[0044] Example 1
[0045] A silicon oxynitride film material is prepared by the following method:
[0046] (1) Using polished P-type (100) doped monocrystalline silicon as the substrate, and performing the following pretreatment: first, soak the substrate with 5wt% HF acid for 3 minutes, then rinse with deionized water, and finally dry its surface;
[0047] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma-enhanced chemical vapor deposition equipment, and evacuated the deposition chamber, so that the vacuum degree of the background is 1×10 -5 Pa about, and heat the substrate to 230℃;
[0048] (3) with SiH containing more than 99.99% purity 4 gas, NH 3 gas, O 2 Gas and Ar 2 Gas is the gas source; among them, contains SiH 4 gas, O 2 Gas, NH 3 gas is the reactive gas, Ar 2 The gas is the carrier gas and shielding gas, and the supplied Ar 2 gas, O 2 Gas, NH 3 gas and containing SiH 4 The gas flow rates are: 400sccm, 1.2s...
Example Embodiment
[0052] Example 2
[0053] A silicon oxynitride film material is prepared by the following method:
[0054] (1) A Ti film with a thickness of 200 nm was prepared on a polished P-type (100) doped single-crystal silicon wafer, and this was used as a substrate, and the following pretreatment was carried out: firstly, ultrasonically used acetone and isopropanol for 5 min each, Then rinse with deionized water, and finally dry the surface;
[0055] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma-enhanced chemical vapor deposition equipment, and evacuated the deposition chamber, so that the vacuum degree of the background is 1×10 -5 Pa about, and heat the substrate to 150℃;
[0056] (3) with SiH containing more than 99.99% purity 4 gas, NH 3 gas, O 2 Gas and Ar 2 Gas is the gas source; among them, contains SiH 4 gas, O 2 Gas, NH 3 gas is the reactive gas, Ar 2 The gas is the carrier gas and shielding gas, and the supplied Ar ...
Example Embodiment
[0059] Example 3
[0060] A silicon oxynitride film material is prepared by the following method:
[0061] (1) make substrate with polished sapphire, and carry out the following pretreatment: first, the substrate is ultrasonicated for 5min each with acetone and isopropanol, then cleaned with deionized water, and finally its surface is dried;
[0062] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma-enhanced chemical vapor deposition equipment, and evacuated the deposition chamber, so that the vacuum degree of the background is 1×10 -6 Pa about, and heat the substrate to 260℃;
[0063] (3) with SiH containing more than 99.99% purity 4 gas, NH 3 gas, O 2 Gas and Ar 2 Gas is the gas source; which contains SiH 4 gas, O 2 Gas, NH 3 gas is the reactive gas, Ar 2 The gas is the carrier gas and shielding gas, and the supplied Ar 2 gas, O 2 Gas, NH 3 gas and containing SiH 4 The gas flow rates are: 450sccm, 10.5sccm, 17.5sccm...
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