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Ultrathin silicon oxynitride film material and preparation method and application thereof

A silicon oxynitride and film material technology, which is applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problem of large non-uniformity of silicon oxynitride film, and achieves a simple and easy preparation process and large size. Application potential, effect of improved uniformity

Active Publication Date: 2015-04-08
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In order to overcome the defect that the silicon oxynitride film is relatively uneven in the prior art, one of the purposes of the present invention is to provide a silicon oxynitride film material. The film material provided by the present invention has good uniformity, and the thickness is about 8nm, which has good insulation, stability and mechanical properties, can be used as an insulating layer, protective film or optical film, and is widely used in the fields of semiconductors, microwaves, optoelectronics and optical devices

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  • Ultrathin silicon oxynitride film material and preparation method and application thereof

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Embodiment 1

[0045] A silicon oxynitride film material prepared by the following method:

[0046] (1) Use polished P-type (100) doped single crystal silicon as the substrate, and carry out the following pretreatment: first, the substrate is soaked in 5wt% HF acid for 3min, then cleaned with deionized water, and finally dried its surface;

[0047] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma enhanced chemical vapor deposition equipment, and evacuate the deposition chamber so that the vacuum degree of the background is 1×10 -5 Pa is about, and the substrate is heated to 230°C;

[0048] (3) SiH containing SiH with a purity greater than 99.99% 4 Gas, NH 3 Gas, O 2 Gas and Ar 2 Gas is the gas source; among them, containing SiH 4 gas, O 2 Gas, NH 3 Gas is the reactive gas, Ar 2 Gas is carrier gas and shielding gas, supplied Ar 2 Gas, O 2 Gas, NH 3 Gas and containing SiH 4 The gas flow rates are: 400sccm, 1.2sccm, 26.8sccm, 130.5scc...

Embodiment 2

[0053] A silicon oxynitride film material prepared by the following method:

[0054] (1) Prepare a 200nm thick Ti film on the polished P-type (100) doped single crystal silicon wafer, and use this as the substrate, and carry out the following pretreatment: first use acetone and isopropanol to sonicate for 5min respectively, Then wash with deionized water, and finally dry the surface;

[0055] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma enhanced chemical vapor deposition equipment, and evacuate the deposition chamber so that the vacuum degree of the background is 1×10 -5 Pa is about, and the substrate is heated to 150°C;

[0056] (3) SiH containing SiH with a purity greater than 99.99% 4 Gas, NH 3 Gas, O 2 Gas and Ar 2 Gas is the gas source; among them, containing SiH 4 gas, O 2 Gas, NH 3 Gas is the reactive gas, Ar 2 Gas is carrier gas and shielding gas, supplied Ar 2 Gas, O 2 Gas, NH 3 Gas and containing SiH 4 ...

Embodiment 3

[0060] A silicon oxynitride film material prepared by the following method:

[0061] (1) Use polished sapphire as the substrate, and carry out the following pretreatment: first, the substrate is ultrasonically 5 min each with acetone and isopropanol, then cleaned with deionized water, and finally the surface is dried;

[0062] (2) Put the pretreated substrate obtained in step (1) into the cavity of the high-density plasma enhanced chemical vapor deposition equipment, and evacuate the deposition chamber so that the vacuum degree of the background is 1×10 -6 Pa is about, and the substrate is heated to 260°C;

[0063] (3) SiH containing SiH with a purity greater than 99.99% 4 Gas, NH 3 Gas, O 2 Gas and Ar 2 Gas is the gas source; among them, containing SiH 4 gas, O 2 Gas, NH 3 Gas is the reactive gas, Ar 2 The gas is carrier gas and shielding gas, the supplied Ar 2 Gas, O 2 Gas, NH 3 Gas and containing SiH 4 The gas flow rates are: 450sccm, 10.5sccm, 17.5sccm, 130.5sc...

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Abstract

The invention discloses an ultrathin silicon oxynitride film material and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a chemical vapor deposition equipment cavity, introducing NH3, O2 gas and SiH4-containing gas as reactant gases, introducing a carrier and protective gas, performing vapor deposition, thereby obtaining the silicon oxynitride film material, wherein the operating temperature of the chemical vapor deposition equipment cavity is 100-260 DEG C, the working pressure is 1-4Pa, and the power is 200-450W; the vapor deposition time is 15-40 seconds; the volume ratio of the SiH4 gas to the O2 gas is 9-110; the volume ratio of the SiH4-containing gas to the NH3 gas is 3-11; and the volume ratio of the SiH4-containing gas to the carrier and the protective gas is 0.1-1. The thickness of the silicon oxynitride film material prepared on a four-inch silicon substrate is 6-9nm, and the non-uniformity of the film is lower than 0.7 percent.

Description

technical field [0001] The invention belongs to the technical fields of optics, semiconductors and microelectronic devices, and in particular relates to a silicon oxynitride film material and its preparation method and application. Background technique [0002] Thin film is a special form of matter. Because of its small size in the specific direction of thickness, it is only a microscopically measurable amount, and the continuity of matter is interrupted due to the existence of surface and interface in the direction of thickness. This makes thin film materials have unique properties different from bulk materials. Optical thin films are composed of thin layered media, a type of optical dielectric material that propagates light beams through the interface, and are widely used in the fields of optics and optoelectronics technology to manufacture various optical instruments. Optical thin film technology has formed a complete system in terms of theory, design, calculation and te...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/513
Inventor 宋志伟褚卫国
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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