Ultrathin silicon oxynitride film material and preparation method and application thereof
A silicon oxynitride and film material technology, which is applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problem of large non-uniformity of silicon oxynitride film, and achieves a simple and easy preparation process and large size. Application potential, effect of improved uniformity
Active Publication Date: 2015-04-08
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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The invention discloses an ultrathin silicon oxynitride film material and a preparation method thereof. The preparation method comprises the following steps: placing a substrate in a chemical vapor deposition equipment cavity, introducing NH3, O2 gas and SiH4-containing gas as reactant gases, introducing a carrier and protective gas, performing vapor deposition, thereby obtaining the silicon oxynitride film material, wherein the operating temperature of the chemical vapor deposition equipment cavity is 100-260 DEG C, the working pressure is 1-4Pa, and the power is 200-450W; the vapor deposition time is 15-40 seconds; the volume ratio of the SiH4 gas to the O2 gas is 9-110; the volume ratio of the SiH4-containing gas to the NH3 gas is 3-11; and the volume ratio of the SiH4-containing gas to the carrier and the protective gas is 0.1-1. The thickness of the silicon oxynitride film material prepared on a four-inch silicon substrate is 6-9nm, and the non-uniformity of the film is lower than 0.7 percent.
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Property | Measurement | Unit |
Thickness | 10.0 | nm |
Thickness | 8.0 | nm |
tensile | MPa | |
Particle size | Pa | |
strength | 10 |
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